JPH0542135B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat treatment apparatus for semiconductor substrates used in the manufacturing process of semiconductor devices.

[Conventional technology]

Heat treatment is an essential step in the manufacturing process of semiconductor devices, but as elements become smaller and smaller, the limits of heat treatment using conventional electric furnaces are beginning to appear. For example, heat treatment for forming a shallow junction after ion implantation can be used. As a means to solve this problem, it has been found that a method of directly heating the wafer for a short time using a halogen lamp is effective. Furthermore, in addition to heat treatment after ion implantation, the above method can be used for many applications related to heat treatment, such as silicide formation, insulating film reflow, alloy formation, electrode wiring sintering, and thin oxide and nitride film formation. It has also been found that this technology can bring about benefits that were not available in the past.

FIG. 12 is a simplified cross-sectional view for explaining a partial configuration of a heat treatment apparatus using a rod-shaped halogen lamp, which has been widely used in the past.

In FIG. 12, 1 is a wafer installed in a quartz chamber 4, and 5a is an upper surface heating source placed in the upper part of the chamber 4 to heat the upper surface of the wafer 1, including a large number of bar-shaped halogen lamps 2 and mirrors arranged horizontally. Consists of 3. Reference numeral 5b denotes a lower surface heating source disposed at the lower part of the chamber 4 for heating the lower surface of the wafer 1, and is composed of a large number of rod-shaped halogen lamps 2 and mirrors 3 arranged vertically.

There are several important points for such heat treatment equipment to be widely applied to semiconductor device manufacturing processes, but the two main points are the ability to achieve uniform temperature distribution and the ability to obtain good temperature reproducibility. be.

The apparatus shown in Fig. 12 aims to improve heating efficiency and equalize the temperature by arranging two groups of lamps on the upper and lower surfaces close to the wafer 1. It is difficult to make the in-plane temperature distribution uniform.

In order to make the temperature distribution within the wafer surface uniform, the heat balance of each part within the wafer surface must be balanced.

In the apparatus shown in FIG. 12, as described below, the first step is to equalize the energy density (illuminance distribution) from the two groups of lamps applied to each part of the wafer surface.
It is also theoretically difficult. Secondly, it is very difficult to equalize the heat radiation energy from various parts within the wafer surface.

First, regarding the illuminance distribution, let us assume that an attempt is made to obtain as uniform an illuminance distribution as possible using the apparatus shown in FIG.
Even in that case, the effect shown in FIG. 13 actually occurs. For the sake of explanation, the upper surface and lower surface heating sources 5a and 5b in FIG. 12 are schematically represented as shown in FIG. 14.

In other words, as long as the lamps 2 are the same rod-shaped lamps, the illuminance distribution in the two directions A and B, parallel to the heating surface by the lamp group (or in the perpendicular direction) and in other directions, is different. Hard to avoid. An example is shown in FIG. Further, in FIG. 13, the illuminance distribution in the direction A is almost uniform, but even in order to obtain such an illuminance distribution, it is necessary to take the following measures.

First, the filament 6 of the lamp 2 needs to be wound tightly and tightly with high precision. An example of such a lamp is shown in FIG. 15, where 7 is a quartz tube. By winding the filament 6 loosely and densely to increase the luminous flux (radiant intensity) toward the end of the lamp, the illuminance around the wafer corresponding to the length direction of the lamp is corrected.

Second, perform lamp zone control (such as Utility Application No. 178820, proposed by the present inventors).
Performs illuminance correction in the direction perpendicular to the lamp. 1st
FIG. 6 is a characteristic diagram showing the relationship between the lamp position and the luminous flux when such correction is performed, and the circle mark indicates the lamp position. Furthermore, the filament 6 of the lamp 2
Since the loose and dense winding of the lamp uniquely determines the illuminance distribution in the length direction of the lamp, in order to alleviate this effect, the two groups of lamps on the upper and lower surfaces are arranged perpendicularly to each other (vertical and horizontal ) or, alternatively, a group of ring-shaped lamps may be arranged concentrically above and below the wafer 1 to be equivalent to a circular light source, but the latter method is difficult to manufacture. Technically, this would be extremely difficult. The above discussion assumes that heat escape (heat radiation) is uniform in each part of the wafer, but if the heat radiation conditions in each part of the wafer are different, the problem becomes even more complicated.

Next, the heat dissipation conditions will be described. The apparatus shown in FIG. 12 practically requires an inlet/outlet for the wafer 1 and a gas inlet/outlet port. FIG. 17 shows the overall configuration of an example of a conventional device provided with these. 9 is a wafer transfer arm made of quartz, 10 is a wafer loading/unloading port, and 11 is an atmospheric gas introduction/output port.

When considering the apparatus in this way, the heat dissipation conditions for each part of the wafer surface cannot be uniform. That is, the wafer loading/unloading port 10 and the atmospheric gas inlet/outlet port 1
The amount of heat radiation (radiation energy per unit area) from the end portion of the wafer surface close to 1 is usually larger than the amount of heat radiation from other portions, and further correction for this effect is required. For example, the shape of the mirror 3 in FIGS. 12 and 17 is selected to have directivity so that illuminance correction around the wafer by zone control of the lamp 2 is effective.

However, for the reasons mentioned above, it is extremely difficult to make the temperature distribution within the wafer surface uniform by zone control or dense and dense winding of the lamp 2. We devised a device that equalized the temperature distribution in the rotational direction (θ direction) and corrected only the radial direction (r direction) by zone control (Japanese Patent Application Laid-Open No. 1983-1999-
119932, Jitsugan No. 155131, etc.). It has been proven that the above device functions extremely effectively based on data on the uniformity of sheet resistance distribution after heat treatment after ion implantation and after heat treatment of the silicide film. However, the thermal stress experienced by the wafer is essentially
It is the same as when it does not rotate in Figure 17, and the temperature is 1100℃.
When performing heat treatment at higher temperatures, there is a problem in that slip lines are generated around the wafer. Also,
A rotation speed of 120 rpm is the limit that the above device can achieve due to its structure. Furthermore, increasing the rotational speed not only brings about mechanical difficulties, but also the cooling effect of forced convection on the wafer becomes a non-negligible problem.

On the other hand, temperature reproducibility must also be considered. As a means of controlling the temperature of the wafer, there is a technology for directly measuring the temperature of the wafer (such as Japanese Patent Application No. 60-252818 proposed by the present inventors). 18th
The figure shows an example of an apparatus in which the above-mentioned wafer temperature measurement system is added to an apparatus capable of rotating a wafer (Japanese Patent Application No. 119932/1982, Utility Application No. 155131/1982, etc.). 12 is a cylindrical temperature measurement port made of quartz attached to the quartz chamber 4 by welding, 13 is a temperature measurement window made of calcium fluoride, 14 is a radiation thermometer with a temperature measurement wavelength of 5 μm or more, and 15 is a quartz disk 16. This is a quartz jig for floating and rotating.

When a wafer was heat-treated using this apparatus, it was found that the temperature measurement port 12 affected the temperature distribution of the wafer 1. FIG. 19 shows an example of the sheet resistance distribution of the ion-implanted wafer after the heat treatment. It can be seen from FIG. 19 that the sheet resistance at the center of the wafer is influenced by the presence of the temperature measurement port 12 and becomes large. When confirmed by theoretical calculations, it was found that this effect depends on the difference in the solid angle when the temperature measurement port 12 is viewed from each part of the wafer surface. That is, the temperature measurement port 12 acts as a heat sink for the wafer 1,
This effect can be alleviated or almost eliminated by separating the upper surface of the quartz chamber 4 (the surface where the temperature measurement port 12 is located) and the lamp 2 and mirror 3 system (upper surface heating source 5a) on that side from the wafer 1. It can be done. However, by separating the upper surface heating source 5a from the wafer 1, there is a drawback that the heating efficiency deteriorates and it becomes more difficult to correct the illuminance around the wafer. Note that it is ideal to measure the temperature of the wafer from the back surface of the wafer, which is less dependent on the wafer surface condition (there is no pattern). However, it is very difficult to measure the temperature from the back surface of the wafer in a state where the wafer has a rotation function (states 15 and 16 in FIG. 18). Both of these can be cited as drawbacks of the apparatus shown in FIG.

[Problem that the invention seeks to solve]

As is clear from the above description, conventionally, the atmospheric gas introduction/output port 11 and the wafer loading/unloading port 10
A disk 16 on which a wafer 1 is mounted is rotatably supported on a jig 15 in a chamber 4 having a side surface, and an upper heating source 5a and a lower heating source 5b are arranged at the upper and lower parts of the chamber 4, respectively. In this semiconductor substrate heat treatment apparatus, in order to equalize the temperature distribution within the wafer surface and obtain good temperature reproducibility, the filaments 6 of the lamps 2 of the upper and lower surface heating sources 5a and 5b are wound loosely and tightly. By orthogonally arranging two groups of lamps (upper and lower heating sources 5a and 5b), the illuminance around the wafer corresponding to the length direction of the lamps 2 can be corrected, and by performing zone control of the lamps 2, the illuminance in the direction perpendicular to the lamps can be adjusted. Even if the disk 16 is rotated to rotate the wafer 1 to make the temperature distribution uniform in the direction of rotation of the wafer, it is possible to manufacture the lamp 2 in which the filament 6 is wound with high accuracy. It is extremely difficult to move the wafer 1 at high speed because the wafer loading/unloading port 10 and atmospheric gas inlet/outlet port 11 are provided on the side of the chamber 4, and the amount of heat dissipated between the two ends of the wafer and the other portions adjacent to these is different. It is difficult to rotate the wafer, and there is a problem of creating slip lines around the wafer.
There is a rotating mechanism on the back side of the wafer, and this rotating mechanism gets in the way, so it is extremely difficult to measure the temperature from the back side of the wafer.If you measure the temperature from the top side of the wafer, the temperature measurement system By influencing the temperature distribution of the wafer, etc., the heat balance of each part of the wafer surface is balanced.In other words, the energy density (illuminance distribution) from the heating source applied to each part of the wafer surface is made uniform and the energy density within the wafer surface is balanced. It is extremely difficult to equalize the heat dissipation energy from each part and to equalize the temperature distribution within the wafer surface without creating a slip line around the wafer. There is a problem in that it is not possible to stably and easily obtain good temperature reproducibility without affecting the temperature distribution.

[Means for solving problems]

In order to solve the above problems, the device of the present invention has the following features:
Atmospheric gas is introduced into the lower part 36 of the side surface as shown in the figure.
A shaft 28 of a wafer holder 8 on which a wafer 1 is placed is vertically disposed in a chamber 4 having outlet ports 20 and 21, and this shaft 28 is connected to a gate 2 that opens and closes a wafer loading/unloading port 10 at the lower end of the chamber 4.
The gate 22 is supported on the base 37 so as to be freely rotatable and movable in the axial direction.
and a vertical movement device 26, and a top surface heating source 5a and a side surface heating source 5c for the wafer 1 are arranged at the top and side portions of the chamber 4, respectively.

[Effect]

In this way, a top heating source 5a and a side heating source 5 of the wafer 1 are provided at the top and side of the chamber 4, respectively.
c, the illuminance distribution given from the upper surface heating source 5a to each part within the wafer surface decreases from the center of the wafer to the edge of the wafer.
Conversely, the illuminance distribution given by the side heating source 5c increases from the center of the wafer to the edge of the wafer, so both heating sources 5a and 5c are applied to various parts of the wafer surface.
The illuminance distribution given by the heating source 5 is made uniform, and
As a, 5c, the filament is not wound tightly,
An inexpensive and easy-to-manufacture lamp with uniform winding can be used.

Atmospheric gas is introduced into the lower side 36 of the chamber 4,
A wafer loading/unloading port 10 is provided at the lower end of the chamber 4, and the wafer loading/unloading port 10, atmospheric gas introduction/exiting ports 20, 21, and the wafer surface are spaced apart from each other. The heat dissipation conditions for each part within the surface of the wafer 11 should be uniform, the wafer 1 should be rotated by the rotary drive device 27, the axial position (height) of the wafer 1 should be adjusted by the vertical movement device 26, or each heating By being able to control the power distribution applied to the sources 5a and 5c, the heat balance for each part of the wafer surface can be made uniform.

That is, the top and side heating sources 5 are provided at various parts within the wafer surface.
By making uniform the illuminance distribution given by a and 5c and making uniform the heat dissipation energy from various parts within the wafer surface, it is possible to make the temperature distribution within the wafer surface uniform without creating a slip line at the periphery of the wafer.

Furthermore, since a wafer temperature measurement system using a radiation thermometer 14 that measures temperature from diagonally below can be installed at the lower side surface 36 of the chamber 4, the wafer holder 8, its shaft 28, and gate 22 provided on the back side of the wafer can be installed. etc., and the temperature measurement system does not disturb the temperature distribution within the wafer surface, making it possible to measure the temperature of the wafer very easily and stably from diagonally below the wafer, achieving good temperature reproducibility. be able to.

〔Example〕

FIG. 1 is a longitudinal sectional view showing the structure of an embodiment of the apparatus of the present invention.

First, its configuration will be explained.

In Figure 1, 4 is a quartz chamber, 5a, 5c
are top and side heating sources disposed at the top and side of the chamber 4, respectively, for heating the wafer 1 placed on the quartz wafer holder 8 in the chamber 4 from the top and side.

The upper surface heating source 5a includes, for example, a large number of rod-shaped lamps 2 arranged vertically and horizontally (orthogonally arranged) as shown in FIGS. 1 and 2, or vertically or horizontally arranged as shown in the third figure. A mirror 3 having a water cooling passage 17 is also provided. 19 is a terminal block, 1
8 is a lead wire for supplying electricity to the lamp 2.

The side heating source 5c is, for example, a large number of rod-shaped lamps 2.
As shown in Figures 1 and 4, four pieces are arranged horizontally in a rectangular shape in multiple stages (arranged in a square tube shape).
Alternatively, the lamps may be arranged vertically in a cylindrical shape as shown in the seventh figure, or a large number of long U-shaped lamps 2a with a small radius of curvature may be arranged vertically in a cylindrical shape as shown in the fifth figure. A large number of U-shaped lamps 2a having a large radius of curvature and a short length are arranged horizontally in multiple stages (arranged in a cylindrical shape) with their directions alternately changed by 180 degrees as shown in FIG. Similarly to the upper surface heating source 5a, a mirror 3 having a water cooling passage 17 is also provided.

The shaft 28 of the wafer holder 8 is connected to the chamber 4
It is freely supported in the rotational direction and movable in the axial direction by a gate 22 that opens and closes the wafer loading/unloading port 10 at the lower end. The gate 22 is supported by a base 37 so as to be movable up and down, and is connected to a cylinder 38 for vertical movement. Further, a wafer rotation motor 27 is connected to the lower part of the shaft 28 via a rotation transmission mechanism 29, and a vertical movement cylinder 26 is connected to the lower end of the shaft 28.

23 is a quartz wall provided on the upper surface of the gate 22;
24 is a bearing for supporting the shaft 28 on the gate 22 so as to be free in the rotational direction and movable in the axial direction.

A mirror 3 having a water cooling passage 17 is provided at the gate 22.
will be attached. 25a and 25b are ports for introducing and leading out cooling water to the water cooling passage 17 of the mirror 3.

Atmospheric gas introduction and extraction ports 20 and 21 are provided at the lower side surface (base portion) 36 of the chamber 4 . 2
0a is a quartz wall for forming an atmospheric gas flow path between the inner wall of the chamber 4, and 30 is a sealing material (O ring) for sealing the heated atmosphere.

Similarly, a temperature measurement port 12 for measuring temperature from diagonally below is provided in the lower side surface 36 of the chamber 4, and a radiation thermometer 14 is disposed opposite to the temperature measurement window 13 of the temperature measurement port 12.

Next, the operation of this embodiment will be explained.

The wafer 1 is placed on the wafer holder 8, and the wafer holder 8 is moved upward with respect to the base 37 by the cylinder 38 together with the gate 22, and the wafer 1 is carried into the chamber 4, and the wafer at the lower end of the chamber 4 is The loading/unloading port 10 is sealed with a gate 22. Further, the wafer holder 8 is moved upward relative to the gate 22 by the cylinder 26 to a predetermined position within the chamber 4 .

Thereafter, atmospheric gas is introduced through the atmospheric gas introduction port 20 and led out through the atmospheric gas introduction port 21. Then, the wafer holder 8 is rotated by the wafer rotation motor 27, and the lamps 2 or 2a of the top and side heating sources 5a and 5c are energized from the terminal block 19 through the lead wire 18, and the wafer 1 in the chamber 4 is rotated on the top and side surfaces. Heat treatment is performed while rotating in atmospheric gas from the side. In this case, cooling water is passed through the water cooling passages 17 of the top and side heating sources 5a, 5c and the mirror 3 of the gate 22 to cool them with water.

The wafer 1 after the heat treatment is moved down by the cylinder 38, the wafer loading/unloading port 10 is opened, and the wafer 1 can be unloaded therefrom. At this time, the cylinder 26 moves the wafer 1 downward to the take-out position. The heat treatment of the wafer 1 is extremely good because a uniform temperature distribution and good temperature reproducibility are obtained, as will be described in detail below.

The feature of this embodiment shown in FIG. 1 is that heating sources 5a and 5c (lamp group) are arranged on the top and side surfaces of the wafer 1. As an example of the lamp arrangement of the top heat source 5a, the arrangement shown in FIGS. 2 and 3 can be used, and as an example of the lamp arrangement of the side heat source 5c, the arrangement as shown in FIGS. 4 to 7 can be adopted. For ease of lamp manufacture, the lamp arrangement of the top heating source 5a is as shown in FIG. 2 or 3, and the side heating source 5c is
It is preferable to adopt the arrangement shown in FIG. 4 or 7 for the lamp arrangement.

There are no special features in the lamp arrangement on the top or side surfaces. For example, it can be considered that the lamp arrangement of FIG. 2 differs from the lamp arrangement of FIG. 3 only in that the emitted light flux is doubled (more energy can be input to the wafer 1). The gist of this embodiment is to arrange the lamps so that each of the top and side surfaces of the wafer 1 has an equal light emitting surface (energy emitting surface), and to create a special intensity distribution on each surface. There is no need to hold it. Therefore, even in a single lamp, it is not necessary to wind the filament 6 in a loosely and densely wound manner as shown in FIG. 15 (it may be wound evenly). The reason for this will be explained next.

For ease of explanation, calculation results for an ideal cylindrical heating system as shown in FIG. 8 will be described. 1 is a wafer, 31 is a disk-shaped uniform top light source (corresponding to the top heating source 5a), and 32 is a cylindrical uniform side light source (corresponding to the side heating source 5c).
It is. A completely ideal system would be created if there was a heating source on the bottom surface as well, but since the wafer loading/unloading port 10, gate 22, etc. are actually required, it is assumed that there is no heating source in this area. FIG. 9 shows an example of the calculation results, normalized by the illuminance at the wafer edge. 33 is an illuminance curve generated only by the top light source 31;
Reference numeral 34 indicates an illuminance curve obtained only by the side light source 32, and 35 indicates an illuminance distribution curve when the illuminance curves obtained from the top and side light sources 31 and 32 are superimposed. The illuminance distribution curve 35 changes due to the difference in heat radiation energy density between the top surface and the side surface, but theoretically it can be easily made straight (horizontal to the horizontal axis). This is not possible with only a top or side light source unless the distance from the wafer is very large (in this case, the illuminance on the wafer surface decreases approximately in inverse proportion to the square of the distance, so heating (The efficiency would be very low and it would be impractical.) That is, the top and side light sources 31 and 32 have contradictory effects (referred to as "complementary effects") on the illuminance of the wafer surface.

The above description is based on an idealized heating system with a cylindrical light source.
Using the same easy-to-manufacture rod-shaped lamp 2 as the lamp arrangement shown in FIG. 2 or 3, the upper surface heating source 5a of the lamp arrangement shown in FIG. By configuring this, it is easier to manufacture than a cylindrical light source and can be realized.

In the case of a cylindrical light source, it is sufficient to discuss the illuminance uniformity only in the radial r direction, but in the case of the rectangular cylindrical light source shown in FIG. 4, the illuminance uniformity in the rotational direction (θ direction) must also be considered. The illuminance distribution by the upper surface heating source 5a has already been explained using FIGS. 13 and 14. What about the side heating source 5b? The effect of the side heating source 5c is shown in Figure 10.
As shown in FIG. 11, the exact opposite occurs with the top heating source 5a. That is, the illuminance in the A direction becomes greater than the illuminance in the B direction as you go from the wafer center to the wafer edge. Therefore, even in the case of a square cylindrical lamp arrangement, the top heating source 5a and the side heating source 5
c is complementary. This can be easily confirmed by calculation or experiment.

Theoretically, a minute area A(r,
θ), the view coefficient when looking at the top heating source 5a and the view coefficient when looking at the side heating source 5c are respectively F ₁ (r,
θ), F ₂ (r, θ), then F ₁ (r, θ) + F ₂ (r,
Since it is clear that θ) = 1 (in this case, only one side of the wafer is considered),
It can be inferred that there is a complementary effect over the entire wafer surface.

The above was an explanation of the uniformity of the illuminance distribution (the energy received by the wafer). It is also necessary to consider the heat radiation energy distribution of the wafer. The apparatus shown in FIG. 1 has a uniform structure around the wafer, and the wafer loading/unloading port 10, atmospheric gas introduction/output ports 20, 21, and the wafer surface area are spaced apart from each other, so that the heat radiation energy distribution can also be made uniform. There are advantages. The effect can be understood by comparing it with FIG. 17. However, depending on the shape of the mirror 3 and the arrangement of the lamps, some non-uniformity may occur, but the multiple reflection effect due to mutual reflection between the mirrors alleviates the non-uniformity.

Furthermore, the apparatus shown in FIG. 1 rotates the wafer 1 in the θ direction and changes the wafer position (height) in the r direction as a countermeasure in the event of non-uniformity in temperature distribution. The non-uniformity of temperature distribution can be easily solved by adjusting the power distribution or correcting the distribution of power input to the lamps. In other words, it has the above-mentioned degree of freedom to obtain the best temperature distribution.

Finally, direct measurement of the wafer temperature by the radiation thermometer 14 in order to obtain temperature reproducibility will be described. As shown in Fig. 1, there is a temperature measurement port on the base part 36 of the chamber 4 (made of metal such as aluminum with mirrored inner surface of the chamber, water-cooled or made of quartz) for measuring temperature from diagonally below. 12,
By adding a wafer temperature measurement system such as a temperature measurement window 13 and a radiation thermometer 14, it is possible to directly measure the wafer temperature. In this case, temperature measurement port 12
It can be said that there is little or no possibility that the presence of the wafer will disturb the temperature distribution within the wafer surface. The influence of the temperature measurement port 12 on the wafer temperature can be estimated from the in-plane position (r, θ) of the wafer as Ω/4π, where Ω is the solid angle at which the temperature measurement port 12 is viewed, but as shown in Figure 1. In a typical configuration, Ω is usually less than 0.03rad at most, and in this case Ω/4π
is 2.4×10 ^-3 , which is an almost negligible value.

As the vertical movement devices 26 and 38 in the present invention, in addition to cylinders, known means such as a device combining a motor and a mechanism for converting the rotation into vertical movement can be applied.

〔Effect of the invention〕

As is clear from the above description, according to the present invention, the top surface heating source 5a and the side heating source 5c of the wafer 1 are arranged at the top and side portions of the chamber 4, respectively, so that the illuminance distribution at each part within the wafer surface is adjusted to
Not only can the illuminance be made uniform due to the complementary effect of the side heating sources 5a and 5c, but also the wafer loading/unloading port 10 and atmospheric gas introduction/output ports 20, 21 can be made uniform.
The wafer 1 must be spaced apart from the wafer surface area so that the distribution of heat radiation energy can be made uniform, and the wafer 1 can be rotated by the rotary drive device 27, the axial position of the wafer can be adjusted by the vertical movement device 26, or each heating Since it is possible to control the power distribution input to the sources 5a and 5c, the heat balance can be made uniform at each part of the wafer surface, so there is no slip line at the periphery of the wafer.
Temperature distribution within the wafer surface can be made uniform.

Further, since a wafer temperature measurement system using a radiation thermometer 14 that measures the temperature from diagonally below can be provided at the lower side 36 of the chamber 4, the wafer holder 8 provided on the back side of the wafer, its shaft 28, gate 22, etc. The temperature measurement system does not disturb the temperature distribution on the wafer surface, and the temperature of the wafer can be measured very easily and stably from diagonally below the wafer, and good temperature reproducibility can be obtained. I can do it.

Furthermore, the upper and side heating sources 5a and 5c can be constructed using inexpensive and easy-to-manufacture lamps with evenly wound filaments, rather than lamps with filaments wound loosely and densely, and atmospheric gas can be introduced into the lower side 36 of the chamber 4 and the outlet port 20 , 21 and a wafer temperature measuring system are provided, and a rotation drive device 27 and a vertical movement device are provided below the shaft 28 of the wafer holder 8, that is, below the position of the gate 22 that opens and closes the wafer loading/unloading port 10. By providing 26, it is possible to provide a compact device that is easy to manufacture.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view showing the configuration of an embodiment of the apparatus of the present invention, FIGS. 2 and 3 are perspective views showing an example of the arrangement of lamps constituting the upper surface heating source in the present invention,
4 to 7 are perspective views showing examples of the arrangement of lamps constituting the side heating source in the present invention, and FIG. 8 is an explanatory diagram of the cylindrical light source when the top and side heating sources in the present invention are idealized. , FIG. 9 is a characteristic diagram showing the relative illuminance of each part of the wafer surface when the cylindrical light source shown in FIG. 8 is used, FIG. 10 is an explanatory diagram of the side heating source shown in FIG. 12 is a simplified cross-sectional view for explaining the partial configuration of a heat treatment apparatus using rod-shaped lamps, which has been widely used in the past, and FIG. A characteristic diagram showing the illuminance of each part of the wafer surface when the illustrated apparatus is used.
An explanatory diagram of the upper surface and lower surface heating sources in the illustrated device,
FIG. 15 is an explanatory diagram of the lamp used in the device shown in FIG. 12, and FIG. 16 is a characteristic diagram showing the relationship between the lamp position and luminous flux when the top and bottom heating sources used in the device shown in FIG. 12 are used. FIG. 17 is a simplified perspective view showing the overall configuration of an example of a conventional device, and FIG. 18 is a first
A simplified vertical cross-sectional view when the apparatus shown in Fig. 7 is equipped with a wafer rotation mechanism and a temperature measurement system, and Fig. 19 is a characteristic diagram showing the relationship between various parts of the wafer surface and sheet resistance when the apparatus shown in Fig. 18 is used. be. 1...Wafer, 2...Bar-shaped halogen lamp,
2a... U-shaped lamp, 3... Mirror, 4... Quartz chamber, 5a... Top heating source, 5b... Bottom heating source, 5c... Side heating source, 8... Wafer holder, 10... Wafer Carrying in/out exit, 12...Temperature measurement port, 13...Temperature measurement window, 14...Radiation thermometer,
17...Water cooling passage, 20...Atmospheric gas introduction port, 21...Atmospheric gas outlet port, 22...Water cooling gate, 24...Bearing, 26...Vertical movement device (cylinder), 27...Rotation drive device ( wafer rotation motor), 28...shaft, 36...
... lower side of chamber 4 (base part), 37...
Base, 38... Vertical movement device (cylinder).

Claims (1)

[Claims] 1. A wafer 1 is placed in a chamber 4 having atmospheric gas introduction and outlet ports 20 and 21 in the lower side portion 36.
A shaft 28 of a wafer holder 8 on which a wafer holder 8 is mounted is vertically disposed, and a gate 22 for opening and closing the wafer loading/unloading port 10 is supported on the shaft 28 at the lower end of the chamber 4 so as to be freely rotatable and movable in the axial direction. The gate 22 is supported on a base 37 so as to be movable up and down, and is connected to a vertical movement device 38, and the rotary drive device 27 and the vertical movement device 26 are connected to the lower part of the shaft 28, and the gate 22 is supported on a base 37 so as to be movable up and down. A heat processing apparatus for semiconductor substrates in which a top heating source 5a and a side heating source 5c are respectively arranged for the wafer 1. 2. The top heating source 5a has a large number of rod-shaped lamps 2 arranged vertically and/or horizontally, and the side heating source 5c
2. The heat treatment apparatus for semiconductor substrates according to claim 1, wherein the apparatus comprises a large number of rod-shaped lamps 2 or U-shaped lamps 2a arranged in a cylindrical shape. 3. The semiconductor substrate heat treatment apparatus according to claim 1, wherein the top heating source 5a, the side heating source 5c, and the gate 22 are provided with cooling means. 4. The lower side surface 36 of the chamber 4 is equipped with a wafer temperature measurement system using a radiation thermometer 14 that measures temperature from diagonally below. A heat treatment apparatus for a semiconductor substrate according to any one of the above.