JPH0544131B2 - - Google Patents
Info
- Publication number
- JPH0544131B2 JPH0544131B2 JP1286482A JP28648289A JPH0544131B2 JP H0544131 B2 JPH0544131 B2 JP H0544131B2 JP 1286482 A JP1286482 A JP 1286482A JP 28648289 A JP28648289 A JP 28648289A JP H0544131 B2 JPH0544131 B2 JP H0544131B2
- Authority
- JP
- Japan
- Prior art keywords
- anode
- needle
- ion
- metal
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 11
- 238000005470 impregnation Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 29
- 238000001819 mass spectrum Methods 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000010405 anode material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052781 Neptunium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- LFNLGNPSGWYGGD-UHFFFAOYSA-N neptunium atom Chemical compound [Np] LFNLGNPSGWYGGD-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Electron Tubes For Measurement (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は金属イオンを発生するための装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for generating metal ions.
例えば質量分析とか半導体のイオン注入とかに
は、イオン発生装置が用いられる。これら何れの
用途においても、イオンビームは細く絞られ然も
高密度であることが望ましい。そして、このよう
なイオンビームの発生源としては、
(イ)イオンソースサイズ(イオン源の大きさ)が
小さい、(ロ)イオンのエネルギ幅が小さい、(ハ)大電
流が得られる、(ニ)長寿命である、(ホ)種々の金属物
質をイオン化することができる、(ヘ)質量スペクト
ルがきれいである(不要な質量スペクトルを含ま
ない)、
等の性質をそなえる必要がある。
For example, ion generators are used for mass spectrometry and ion implantation of semiconductors. In any of these applications, it is desirable that the ion beam be narrowly focused and have a high density. Sources for generating such ion beams include (a) a small ion source size (b) a small ion energy range, (c) a large current, and (a) a small ion source size. It is necessary to have the following properties: (e) it has a long life, (e) it can ionize various metal substances, and (f) it has a clean mass spectrum (does not contain unnecessary mass spectra).
そこで、従来のいくつかのイオン発生装置につ
いて検討してみる。検討対象としては、(1)電界電
離型、(2)電界蒸発型、(3)表面電離型、(4)気中放電
型を掲げる。 Therefore, some conventional ion generators will be considered. The following types are considered: (1) field ionization type, (2) field evaporation type, (3) surface ionization type, and (4) air discharge type.
(1) 電界電離型
これは、曲率半径数1000〔Å〕の針状陽極の尖
端に生ずる2〜4×108〔V/cm〕の強電界によ
り、陽極に入射する中性ガス分子を電界電離する
ものである。そして、イオンソースサイズが小さ
いこと、イオンのエネルギ幅が小さいこと、長寿
命であること、および質量スペクトルがきれいで
あることを長所とする。しかし、この型のもの
は、イオン化できる物質が特定の気体に限られ、
イオン電流も10-10〔A〕と極めて少いという難点
がある。(1) Field ionization type In this type, a strong electric field of 2 to 4 × 10 8 [V/cm] is generated at the tip of a needle-shaped anode with a radius of curvature of several 1000 [Å], and neutral gas molecules incident on the anode are It ionizes. The advantages include a small ion source size, a small ion energy width, a long lifetime, and a clean mass spectrum. However, with this type, the substances that can be ionized are limited to specific gases,
The drawback is that the ionic current is extremely low at 10 -10 [A].
(2) 電界蒸発型
電界電離型と同様に、曲率半径数1000〔Å〕の
針状陽極の尖端に生ずる1×108〜1×104〔V/
cm〕の強い電界により、陽極材料そのものを電界
蒸発させるものである。そして、イオンソースが
小さいこと、イオンのエネルギ幅が小さいこと、
種々の物質をイオン化できること、および質量ス
ペクトルがきれいであることを長所とする。しか
し、イオン電極が極めて少く、またイオン化され
る物質が次々と剥ぎとられるために陽極尖端がた
ちどころに鈍化してしまい極めて寿命が短いとい
う欠点がある。(2) Field evaporation type Similar to the field ionization type, 1×10 8 to 1×10 4 [V/
cm] is used to evaporate the anode material itself using a strong electric field. Also, the ion source is small, the energy width of the ions is small,
It has the advantage of being able to ionize various substances and providing a clean mass spectrum. However, it has the disadvantage that there are very few ion electrodes, and because the ionized substances are successively stripped off, the anode tip quickly becomes dull and has an extremely short lifespan.
(3) 表面電離型
これは、高温にされた仕事関数の大きい金属表
面に、アルカリ金属のように電離エネルギの低い
元素の蒸気を吹き付けることによつてイオン化す
るものである。そして、イオンのエネルギ幅が小
さいこと、および質量スペクトルがきれいである
ことを長所とする。しかし、使用できる物質が極
めて限定され、またースサイズも極めて大きい難
点がある。(3) Surface ionization type This type ionizes a high-temperature metal surface with a high work function by spraying the vapor of an element with low ionization energy, such as an alkali metal. Its advantages include a small ion energy width and a clean mass spectrum. However, there are disadvantages in that the materials that can be used are extremely limited and the space size is also extremely large.
(4) 気中放電型
最も一般的とされている気中放電によりイオン
化するものである。大電流を取出すのには、上記
4例のうちでも最も適している。しかし、ソース
サイズが大きく、イオンのエネルギ幅も大きく、
さらに質量スペクトルがきれいでない欠点があ
る。(4) Air discharge type This is the most common type that ionizes through air discharge. Of the four examples above, this is the most suitable for drawing out a large current. However, the source size is large and the ion energy range is also large.
Another disadvantage is that the mass spectrum is not clear.
これらの検討結果から、従来のイオン発生装置
は、何れも要求される全ての事項を充足すること
ができないことが分る。 The results of these studies show that none of the conventional ion generators can satisfy all of the requirements.
本発明は上述の点に鑑みてなされたもので、イ
オンソースサイズが小さく、イオンのエネルギ幅
が小さく、大電流が得られ、長寿命であり、種々
の非ガス状物質とくに金属をイオン化でき、しか
も質量スペクトルのきれいなイオン発生装置の提
供を目的とする。 The present invention has been made in view of the above points, and has a small ion source size, a narrow ion energy width, a large current, a long life, and the ability to ionize various non-gaseous substances, especially metals. Moreover, the purpose is to provide an ion generator with a clean mass spectrum.
この目的のため、本発明では、曲率半径が数
1000Åの先端を有する中実の針状電極に、この針
状電極とは異種の金属を、蒸着、表面拡散、含浸
により供給することで構成した陽極と、この陽極
を加熱して前記供給金属を移動し易くさせるため
の熱エネルギーを与えるヒータと、前記陽極との
間に前記異種金属の原子を電離させるための電界
を与える陰極とを真空雰囲気中に設けてなるイオ
ン発生装置、を提供するものである。
For this purpose, in the present invention, the radius of curvature is
An anode is constructed by supplying a metal different from the needle electrode to a solid needle electrode with a 1000 Å tip by vapor deposition, surface diffusion, or impregnation, and the anode is heated to remove the supplied metal. Provided is an ion generator comprising a heater that provides thermal energy to facilitate movement, and a cathode that provides an electric field to ionize the atoms of the different metal between the anode and the anode in a vacuum atmosphere. It is.
〔実施例〕
第1図は本発明に係る装置の構成を示したもの
で、1はタングステン等により構成された針状陽
極であり、タングステン等からなるヒータ2に取
付けられている。このヒータ2は、ヒータ電源3
により通電され針状陽極1を加熱する。一方、針
状陽極1に対向するように陰極5を設け、高圧電
源4によつて針状陽極1との間に高電界を印加す
る。[Embodiment] FIG. 1 shows the configuration of an apparatus according to the present invention, in which 1 is a needle-shaped anode made of tungsten or the like, which is attached to a heater 2 made of tungsten or the like. This heater 2 has a heater power source 3
energized to heat the needle-like anode 1. On the other hand, a cathode 5 is provided to face the acicular anode 1 , and a high electric field is applied between the cathode 5 and the acicular anode 1 by a high voltage power source 4 .
針状陽極1は、そのソースサイズが100〔Å〕未
満となるように構成する。これには、電界研摩に
より、先端を数100〜数1000〔Å〕に研摩した針状
陽極に高電圧を印加しつつ加熱すればよい。この
場合、針状電極尖端においては、各結晶面の仕事
関数、表面エネルギ、局部電界等が異なる。この
ため、ある特定の結晶面が生長隆起し、針状陽極
の尖端に100〔Å〕未満程度の小さな曲率半径を持
つ突出部(図示せず)が形成される。この突出部
が生長する条件は、下式による。 The needle-shaped anode 1 is configured so that its source size is less than 100 [Å]. This can be done by heating a needle-like anode whose tip has been polished to several hundred to several thousand angstroms by electric field polishing while applying a high voltage. In this case, the work function, surface energy, local electric field, etc. of each crystal plane at the tip of the needle electrode are different. Therefore, a certain crystal face grows and bulges, and a protrusion (not shown) having a small radius of curvature of less than 100 [Å] is formed at the tip of the needle-like anode. The conditions for this protrusion to grow are based on the following equation.
F≒V/5r>(8πγ/r)1/2 ……(1)
ただし
F:針状電極尖端にかかる静電気力〔V/cm〕
V:陽極と陰極との相対電位差〔V〕
r:針状陽極の曲率半径〔cm〕
γ:針状陽極表面原子の表面張力〔dyne/cm〕
いまタングステンを例にとると、
F>8.1×104r-1/2〔V/cm〕 ……(2)
であるからr=1000〔Å〕とすると、V=1.28
〔KV〕以上の電圧を印加すればよいことになる。
そして、針状陽極の半径により定まる値以上の陽
極温度T、電界Vを与えれば、陽極尖端の突出部
は時間と共に曲率半径rを減じていく。これに伴
ないF≒V/5rの関係によりFは増大し、突出部
の表面原子は極めて大きな分極エネルギを獲得し
イオン化脱離されることになる。この結果突出部
の曲率半径は一定値で平衡状態となる。すなわち
突出部においては、熱エネルギと静電気力による
突出部への原子供給とイオン化脱離による原子の
減少とが完全に平衡し、極めて安定なイオン電流
が連続的に得られる。 F≒V/5r>(8πγ/r)1/2 ...(1) where F: Electrostatic force applied to the tip of the needle electrode [V/cm] V: Relative potential difference between the anode and cathode [V] r: Needle Radius of curvature of needle-shaped anode [cm] γ: Surface tension of surface atoms of needle-shaped anode [dyne/cm] Taking tungsten as an example, F>8.1×10 4 r -1/2 [V/cm] ...( 2) Therefore, if r = 1000 [Å], V = 1.28
It is sufficient to apply a voltage of [KV] or more.
Then, if an anode temperature T and an electric field V which are higher than the values determined by the radius of the needle-shaped anode are applied, the radius of curvature r of the protruding portion of the anode tip decreases over time. Along with this, F increases due to the relationship F≈V/5r, and the surface atoms of the protrusion acquire extremely large polarization energy and are ionized and desorbed. As a result, the radius of curvature of the protrusion remains at a constant value and is in an equilibrium state. That is, in the protrusion, the supply of atoms to the protrusion due to thermal energy and electrostatic force and the reduction of atoms due to ionization and desorption are perfectly balanced, and an extremely stable ion current is continuously obtained.
第2図は本発明に係る装置における針状陽極に
異種金属を付加せずに陽極材料そのものをイオン
種としたときのイオン電流の時間的変化特性を示
したものである。この場合、イオン種として、陽
極材料であるタングステンすなわち(310)Wを
用い、それによる針状電極の尖端の曲率半径を
2000〔Å〕、真空度を5×10-8〔Torr〕とする。そ
して、針状電極に熱エネルギと静電気力とを同時
に加えて、陽極電位を5〔KV〕、温度を1800〔°
K〕にする。この結果、熱エネルギおよび静電気
力を印加してから約10分間で略々安定状態とな
る。このとき、突出部の原子供給とイオン化脱離
とが平衡している。 FIG. 2 shows the temporal change characteristics of the ionic current when the anode material itself is used as the ion species without adding a different metal to the needle-shaped anode in the device according to the present invention. In this case, the anode material, tungsten (310) W, is used as the ion species, and the radius of curvature of the tip of the needle electrode is
2000 [Å], and the degree of vacuum is 5×10 -8 [Torr]. Then, thermal energy and electrostatic force were applied simultaneously to the needle electrode, increasing the anode potential to 5 [KV] and the temperature to 1800 [°
K]. As a result, a substantially stable state is reached in about 10 minutes after applying thermal energy and electrostatic force. At this time, the supply of atoms to the protrusion and the ionization and desorption are in equilibrium.
この装置で、イオン電流を制御するには、陽極
温度または印加電圧を変えればよく、電流可変範
囲は10-11〜数μ〔A〕が得られ、充分に大電流で
ある。 In order to control the ion current with this device, it is sufficient to change the anode temperature or the applied voltage, and the current variable range can be obtained from 10 -11 to several μ [A], which is a sufficiently large current.
第3図は本発明に係る装置におけるイオンの方
向依存性を示したものである。この装置では、2
方向について強い方向性を持ち、特にそのうち一
方、図におけるAにより強い方向性を持つてお
り、Bはさほど強くない。このAピークの発散角
は10-2〔ster〕である。これは、原理的にも陽極
の突出部だけからイオンが放出されるためであ
り、イオン源の大きさも100〔Å〕未満程度と小さ
い。また、イオンのエネルギ幅は1〔eV〕以下で
あり、充分要求に応え得る。 FIG. 3 shows the directional dependence of ions in the device according to the present invention. In this device, 2
It has a strong directionality, and in particular, one of them, A in the figure, has a stronger directionality, and B has a less strong directionality. The divergence angle of this A peak is 10 -2 [ster]. This is because, in principle, ions are emitted only from the protrusion of the anode, and the size of the ion source is also small, about less than 100 Å. In addition, the energy width of the ions is 1 [eV] or less, which satisfies the requirements.
第4図は本発明に係る装置におけるイオンの質
量スペクトルを示したものである。図から明らか
なように、Na+,K+がタングステン陽極中の不
純物として観測される程度で、極めてきれいな質
量スペクトルを持つ。 FIG. 4 shows the mass spectrum of ions in the apparatus according to the present invention. As is clear from the figure, the mass spectrum is extremely clean, with Na + and K + being observed as impurities in the tungsten anode.
さらに前述の諸要求のうちで残されたものとし
て、寿命およびイオン化物質の種類の問題があ
る。このうち、寿命については、原子の供給を行
わない場合、取出すイオン電流の値にもよるが、
適当な電界と温度とが与えられれば数10時間以上
を得ることは容易である。また、イオン化できる
物質は、ベリリウムBe、硼素B、アルミニウム
A、シリコンSi、チタンTi、バナジウムV、
クロムCr、鉄Fe、コバルトCo、ニツケルNi、銅
Cu、亜鉛Zn、ゲルマニウムGe、ジルコニウム
Zr、ネプツニウムNb、モリブデンMo、ルテニ
ウムRu、ロジウムRh、パラジウムPd、銀Ag、
錫Sn、レニウムRe、オスミウムOs、イリジウム
Ir、白金Pt、金Au等があり、極めて多種である。 Further remaining among the aforementioned requirements are issues of lifetime and type of ionizable material. Of these, the lifespan depends on the value of the ion current taken out if atoms are not supplied.
If appropriate electric field and temperature are given, it is easy to obtain a period of several tens of hours or more. Substances that can be ionized include beryllium Be, boron B, aluminum A, silicon Si, titanium Ti, vanadium V,
Chromium Cr, iron Fe, cobalt Co, nickel Ni, copper
Cu, zinc Zn, germanium Ge, zirconium
Zr, neptunium Nb, molybdenum Mo, ruthenium Ru, rhodium Rh, palladium Pd, silver Ag,
Tin Sn, rhenium Re, osmium Os, iridium
There are a wide variety of materials, including Ir, platinum (Pt), gold (Au), etc.
上記実験例では、針状電極を単一種金属により
構成し、針状陽極の構成原子をそのままイオン化
する場合を示したが、本発明では針状陽極に該陽
極と異種の金属を蒸着、表面拡散、含浸等によつ
て付加する。また、ヒータはレーザ光、電子衝撃
で置き換えてもよいし、その材料をタングステン
以外にタンタルTa、炭素C等で構成してもよい。
さらに、陽極、陰極間に高電界を印加するための
電源は、陽極と接地との間に挿入しているが、陽
極と陰極との間に挿入してもよい。 In the above experimental example, the case where the needle-shaped electrode is made of a single type of metal and the constituent atoms of the needle-shaped anode are ionized as they are is shown. , by impregnation, etc. Further, the heater may be replaced by a laser beam or an electron bombardment, and its material may be made of tantalum Ta, carbon C, etc. other than tungsten.
Furthermore, although the power source for applying a high electric field between the anode and the cathode is inserted between the anode and the ground, it may be inserted between the anode and the cathode.
本発明は上述のように、真空雰囲気中に、曲率
半径が数1000Åの先端を有する中実の針状電極
に、この針状電極とは異種の金属を、蒸着、表面
拡散、含浸により供給することで陽極を構成し、
この陽極をヒータにより加熱して前記供給金属を
移動し易くさせるための熱エネルギーを与え、陰
極により前記陽極との間に前記異種金属の原子を
電離させるための電界を与えるようにしたため、
針状電極として利用できる限りの殆ど全ての金属
を陽極材料として利用できるから多種類の金属を
イオン化できる。そして針状の構成であるから、
例えば従来のキヤピラリ型のものよりも構造が著
しく簡単で容易に製作でき、かつ消費電力が少な
くて済む。さらにキヤピラリ型に比べれば、より
高融点の元素のイオン化が可能であり、また温度
と電圧でイオン電流をコントロールできる点でも
優れている。したがつて、質量分析用としても、
イオン打込み用としても極めて優れた性能の装置
が得られる。
As described above, the present invention supplies a metal different from the needle electrode to a solid needle electrode having a tip with a radius of curvature of several 1000 Å in a vacuum atmosphere by vapor deposition, surface diffusion, or impregnation. This constitutes the anode,
The anode is heated by a heater to provide thermal energy to facilitate the movement of the supplied metal, and the cathode provides an electric field between the anode and the anode to ionize atoms of the dissimilar metal.
Since almost all metals that can be used as needle electrodes can be used as anode materials, many types of metals can be ionized. And since it has a needle-like structure,
For example, the structure is significantly simpler and easier to manufacture than the conventional capillary type, and it consumes less power. Furthermore, compared to the capillary type, it is capable of ionizing elements with higher melting points, and is also superior in that the ion current can be controlled by temperature and voltage. Therefore, for mass spectrometry,
A device with extremely excellent performance can also be obtained for ion implantation.
第1図は本発明に係る装置の電気的構成を示す
説明図、第2図は同装置におけるイオン化電流の
時間的変化特性を示した図、第3図は同装置にお
けるイオンの方向依存性を示す図、第4図は同装
置における質量スペクトルの説明図である。
1……針状電極、2……ヒータ、3,4……電
源、5……陰極。
Fig. 1 is an explanatory diagram showing the electrical configuration of the device according to the present invention, Fig. 2 is a diagram showing the temporal change characteristics of the ionization current in the same device, and Fig. 3 is a diagram showing the directional dependence of ions in the same device. The figure shown in FIG. 4 is an explanatory diagram of a mass spectrum in the same apparatus. 1... Needle electrode, 2... Heater, 3, 4... Power supply, 5... Cathode.
Claims (1)
状電極に、この針状電極とは異種の金属を、蒸
着、表面処理、含浸により供給することで構成し
た陽極と、 この陽極を加熱して前記供給金属を移動し易く
させるための熱エネルギーを与えるヒータと、 前記陽極との間に前記異種金属の原子を電離さ
せるための電界を与える陰極と を真空雰囲気中に設けてなるイオン発生装置。[Claims] 1. An anode constructed by supplying a solid needle-like electrode with a tip with a radius of curvature of several thousand amps with a metal different from that of the needle-like electrode through vapor deposition, surface treatment, and impregnation. , a heater that provides thermal energy to heat the anode to facilitate the movement of the supplied metal, and a cathode that provides an electric field to ionize atoms of the dissimilar metal between the anode and the anode in a vacuum atmosphere. Ion generator provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1286482A JPH02210740A (en) | 1989-11-02 | 1989-11-02 | Ion generating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1286482A JPH02210740A (en) | 1989-11-02 | 1989-11-02 | Ion generating apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50083882A Division JPS5833649B2 (en) | 1975-07-08 | 1975-07-08 | ion generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02210740A JPH02210740A (en) | 1990-08-22 |
| JPH0544131B2 true JPH0544131B2 (en) | 1993-07-05 |
Family
ID=17704969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1286482A Granted JPH02210740A (en) | 1989-11-02 | 1989-11-02 | Ion generating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02210740A (en) |
-
1989
- 1989-11-02 JP JP1286482A patent/JPH02210740A/en active Granted
Non-Patent Citations (1)
| Title |
|---|
| ELECTROHYDRODYNAMIC ION SOURCE=1969 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02210740A (en) | 1990-08-22 |
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