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JPH0544662B2 - - Google Patents
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JPH0544662B2 - - Google Patents

Info

Publication number
JPH0544662B2
JPH0544662B2 JP58204803A JP20480383A JPH0544662B2 JP H0544662 B2 JPH0544662 B2 JP H0544662B2 JP 58204803 A JP58204803 A JP 58204803A JP 20480383 A JP20480383 A JP 20480383A JP H0544662 B2 JPH0544662 B2 JP H0544662B2
Authority
JP
Japan
Prior art keywords
photomask
shielding film
frame
transparent
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58204803A
Other languages
Japanese (ja)
Other versions
JPS6097356A (en
Inventor
Yasuhiro Koizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58204803A priority Critical patent/JPS6097356A/en
Publication of JPS6097356A publication Critical patent/JPS6097356A/en
Publication of JPH0544662B2 publication Critical patent/JPH0544662B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Description

【発明の詳細な説明】 〔技術分野〕 本発明は露光技術に関するもので、特に半導体
用ホトマスクや縮小アライナ用レチクル等に適用
するホトマスクに関するもので、ホトマスクのパ
ターン転写時における異物の転写を防止して露光
できうる技術に関するものである。
[Detailed Description of the Invention] [Technical Field] The present invention relates to exposure technology, and in particular to a photomask applied to a semiconductor photomask, a reticle for a reduction aligner, etc. The present invention relates to a photomask that is applied to a semiconductor photomask, a reticle for a reduction aligner, etc. It relates to technology that can be used for exposure.

〔背景技術〕[Background technology]

半導体装置の製造に多用されるホトリングラフ
イ工程では、ウエーハ等に形成する素子パターン
の原板としてのホトマスクやレチクル(本明細書
ではこれらをホトマスクと総称する)が必須のも
のとされている。ところで、この種のホトマスク
をホトクソグラフイ技術でパターン転写を行なう
場合、ホトマスクの表面や裏面に塵埃等の異物が
付着しているとパターンと同時にこの異物も転写
されてしまいパターン欠陥を生じることになる。
In the photolithography process, which is often used in the manufacture of semiconductor devices, a photomask or reticle (herein referred to collectively as a photomask) is essential as a master plate for element patterns formed on a wafer or the like. By the way, when pattern transfer is performed on this type of photomask using photoxography technology, if foreign matter such as dust adheres to the front or back surface of the photomask, this foreign matter will be transferred at the same time as the pattern, resulting in pattern defects.

このため、第1図に示すようにホトマスク1の
表、裏面の周囲にスペーサとしての固定フレーム
2,3を固着すると共に、これら各固定フレーム
2,3の周縁に透明な膜4,5を張設することが
考えられる。この構成によれば、異物は膜4,5
には付着してもホトマスク1の表、裏面に直接付
着することは防止されるため、この膜4,5とホ
トマスク1表の、裏面の間〓、換言すれば固定フ
レーム2,3の高さをアライナの焦点深度以上の
寸法に設定しておけば、異物が転写されることは
ない。
For this purpose, fixed frames 2 and 3 as spacers are fixed around the front and back surfaces of the photomask 1 as shown in FIG. It is conceivable to set up According to this configuration, foreign matter is removed from the membranes 4 and 5.
Since it is prevented from directly adhering to the front and back surfaces of the photomask 1 even if it adheres to If the depth of focus is set to be greater than or equal to the depth of focus of the aligner, foreign matter will not be transferred.

しかしながら、この構成では一旦膜4,5を構
成してしまうと、ホトマスク1を自動外観検査機
にかけた場合に膜4,5によつて検査光学系に焦
点ずれが生じ、自動外観検査ができなくなるとい
う問題が生じる。このため、被転写物における外
観検査を行なう等間接的な検査方法をとらざるを
得ず、検査時間が長くなると共に評価精度も低く
なるという問題があることを本発明者は見い出し
た。
However, with this configuration, once the films 4 and 5 are formed, when the photomask 1 is placed in an automatic visual inspection machine, the films 4 and 5 cause a focus shift in the inspection optical system, making automatic visual inspection impossible. A problem arises. For this reason, the inventors have found that indirect inspection methods such as visual inspection of the transferred object have to be used, resulting in problems such as longer inspection time and lower evaluation accuracy.

〔発明の目的〕[Purpose of the invention]

本発明の目的はホトマスク表、裏面への異物の
付着を防止して異物の転写を防止し得るのはもと
より、ホトマスクを自動外観検査機にかけても何
等の不具合が生じることなく良好な検査を行なう
ことができ、これにより半導体製品の歩留りの向
上および作業効率の向上を達成することができる
ホトマスクを提供することにある。
The purpose of the present invention is not only to prevent foreign matter from adhering to the front and back surfaces of a photomask and to prevent foreign matter from being transferred, but also to perform a good inspection without causing any defects even when the photomask is subjected to an automatic visual inspection machine. An object of the present invention is to provide a photomask that can improve the yield of semiconductor products and improve work efficiency.

本発明の前記ならびにそのほかの目的と新規な
特徴は、本明細書の記述および添付図面からあき
らかになるであろう。
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なも
のの概要を簡単に説明すれば、下記のとおりであ
る。
A brief overview of typical inventions disclosed in this application is as follows.

すなわち、ホトマスクにその高さが可変なフレ
ームを取着し、このフレームに透明な遮蔽膜を取
着してホトマスクをカバーすることにより、ホト
マスクの露光時と外観検査時とでホトマスクと遮
蔽膜との間〓を変化させ、これにより異物の転写
を防止する一方で自動外観検査を可能にし、半導
体製品の歩留りの向上および作業効率の向上を達
成するものである。
That is, by attaching a frame whose height is variable to the photomask and attaching a transparent shielding film to the frame to cover the photomask, the difference between the photomask and the shielding film can be maintained during exposure and visual inspection of the photomask. The present invention is designed to prevent the transfer of foreign matter while enabling automatic visual inspection, thereby improving the yield of semiconductor products and improving work efficiency.

〔実施例〕〔Example〕

第2図は本発明の一実施例の一部破断斜視図で
あり、ホトマスク10は透明ガラス基板11の表
面11aにCr等の金属膜或いはその他の光不透
過膜12を所要のパターン形状に形成している。
このパターン形状の形成は常法としてのホトクソ
グラフイ技術が適用されているが詳細は省略す
る。
FIG. 2 is a partially cutaway perspective view of an embodiment of the present invention, in which a photomask 10 forms a metal film such as Cr or other light-opaque film 12 in a desired pattern shape on the surface 11a of a transparent glass substrate 11. are doing.
A conventional photoxography technique is applied to form this pattern shape, but the details will be omitted.

前記ホトマスク10の表、裏面11a、11b
には正方形枠状のフレーム13,14を周辺部に
取着している。これらフレーム13,14は、本
例では軟質樹脂材などから全体を蛇腹状に形成し
ており、その一端縁をホトマスク10面に接着す
ることにより他端縁をホトマスク10この厚さ方
向に位置変化できる。換言すれば、ホトマスク1
0を水平に設置した場合、各フレーム13,14
はその高さ寸法を変化できるようにしている。そ
して、これらフレーム13,14の他端縁には
夫々薄い透明樹脂材からなる遮蔽膜15,16を
張設し、夫々ホトマスク10の表、裏面11a、
11bを気密状態にカバーしている。遮蔽膜1
5,16のフレーム13,14との接続部には補
助フレーム17,18を取着しており、フレーム
13,14ないし遮蔽膜15,16に節度を考え
ている。
Front and back surfaces 11a and 11b of the photomask 10
Square frames 13 and 14 are attached to the periphery of the frame. In this example, these frames 13 and 14 are formed entirely in a bellows shape from a soft resin material, and by bonding one end of the frame to the surface of the photomask 10, the other end of the frame changes its position in the thickness direction of the photomask 10. can. In other words, photomask 1
0 is installed horizontally, each frame 13, 14
allows its height dimension to be changed. Shielding films 15 and 16 made of a thin transparent resin material are stretched over the other edges of the frames 13 and 14, respectively, and the front and back surfaces 11a of the photomask 10 are covered with shielding films 15 and 16, respectively.
11b is airtightly covered. Shielding film 1
Auxiliary frames 17 and 18 are attached to the connecting portions of frames 13 and 14, and moderation of frames 13 and 14 and shielding films 15 and 16 is considered.

更に、前記フレーム13,14の周囲一部には
細径のチユーブ19,20の一端を接続し、ホト
マスク10の表、裏面11a、11bと、フレー
ム13,14および遮蔽膜15,16とで夫々画
成される気密空間21,22に連通させている。
これらチユーブ19,20には開閉バルブ23,
24を介装し、また他端は清浄空気を供給し或い
は空気吸引の可能な空気コントローラ25に接続
している。
Furthermore, one ends of small-diameter tubes 19 and 20 are connected to part of the periphery of the frames 13 and 14, and the front and back surfaces 11a and 11b of the photomask 10, the frames 13 and 14, and the shielding films 15 and 16 are connected to each other. It communicates with defined airtight spaces 21 and 22.
These tubes 19, 20 have on-off valves 23,
24 is interposed therebetween, and the other end is connected to an air controller 25 capable of supplying clean air or sucking air.

以上の構成によれば、空気コントローラ25の
清浄空気をチユーブ19,20を通して気密空間
21,22に供給すれば、空間21,22内は外
気よりも陽圧になり遮蔽膜15,16はフレーム
13,14を伸長させながらホトマスク10の
表、裏面11a、11bから離れ、第3図Aのよ
うにホトマスク10の表、裏面11a、11bと
遮蔽膜15,16との間〓寸法を5〜15mm程度に
大きくする。この状態で開閉バルブ23,24を
閉成すれば遮蔽膜15,16はその状態た保たれ
る。したがつて、このホトマスクをアライナに設
置して所定の露光を行なえば、異物は遮蔽膜1
5,16には付着してもホトマスク10の表、裏
面11a、11bに直接付着することはなく、し
かも遮蔽膜15,16はホトマスクの表、裏面1
1a、11bからアライナの焦点深度以上に離さ
れているために、この異物が転写されることは全
くない。これにより、異物が転写されることによ
り生じるパターン欠陥を確実に防止できる。
According to the above configuration, when clean air from the air controller 25 is supplied to the airtight spaces 21 and 22 through the tubes 19 and 20, the pressure inside the spaces 21 and 22 becomes more positive than the outside air, and the shielding membranes 15 and 16 , 14 away from the front and back surfaces 11a and 11b of the photomask 10, and as shown in FIG. Make it bigger. If the on-off valves 23 and 24 are closed in this state, the shielding films 15 and 16 are maintained in that state. Therefore, if this photomask is placed in an aligner and a predetermined exposure is performed, the foreign matter will be removed from the shielding film 1.
5 and 16, it does not directly adhere to the front and back surfaces 11a and 11b of the photomask 10, and the shielding films 15 and 16 do not directly adhere to the front and back surfaces 11a and 11b of the photomask 10.
Since the distance from 1a and 11b is greater than the depth of focus of the aligner, this foreign material is never transferred. Thereby, pattern defects caused by transfer of foreign matter can be reliably prevented.

一方、ホトマスク10の外観検査時には、開閉
バルブ23,24を開いた上で空気コントローラ
25により気密空間21,22内の空気をチユー
ブ19,20を通して吸引する。これにより、気
密空間21,22内は外気よりも陰圧とされ、第
3図Bのようにフレーム13,14は短縮されか
つ遮蔽膜15,16は夫々若千撓まされながらホ
トマスク10の表、裏面11a、11bに密着さ
れた状態とされる。したがつて、この状態でホト
マスク10を自動外観検査機にかければ、遮蔽膜
15,16が検査機の光学系の焦点ずれを生じる
ことはなく、通常のホトマスクの場合と全く同じ
に自動外観検査を行なうことができる。
On the other hand, when inspecting the appearance of the photomask 10, the on-off valves 23 and 24 are opened, and the air in the airtight spaces 21 and 22 is sucked through the tubes 19 and 20 by the air controller 25. As a result, the pressure inside the airtight spaces 21 and 22 is made more negative than the outside air, and as shown in FIG. , are in close contact with the back surfaces 11a and 11b. Therefore, if the photomask 10 is subjected to an automatic visual inspection machine in this state, the shielding films 15 and 16 will not cause the optical system of the inspection machine to be out of focus, and the automatic visual inspection will be performed in exactly the same way as for a normal photomask. can be done.

以上のことから、このホトマスク構造によれば
欠陥転写の防止を図つて半導体製品の歩留の向上
を達成する一方、自動外観検査を可能にして作業
効率の向上を図りかつ評価精度を高いものにでき
る。
From the above, this photomask structure prevents defect transfer and improves the yield of semiconductor products, while also enabling automatic visual inspection to improve work efficiency and improve evaluation accuracy. can.

〔効果〕〔effect〕

(1) ホトマスクに高さの可能なフレームを取着
し、このフレームに透明な遮蔽膜を張設してフ
レームの作用によつて遮蔽膜とホトマスク表、
裏面との間〓を変化できるように構成している
ので、露光時には間〓を大にして遮蔽膜上の異
物を焦点深度外におき異物の転写を防止して欠
陥の発生を防止し、半導体歩留の向上を達成で
きる。
(1) A frame that can be adjusted in height is attached to the photomask, and a transparent shielding film is stretched over the frame, and the shielding film and the photomask surface are separated by the action of the frame.
Since the structure is configured so that the distance from the back surface can be changed, the distance from the shielding film is increased during exposure, and the foreign matter on the shielding film is placed outside the depth of focus to prevent the foreign matter from being transferred and the generation of defects. Improved yield can be achieved.

(2) 逆に、遮蔽膜とホトマスクとの間〓を小ない
し零にすることにより、外観検査機の光学系に
おける焦点ずれを防止でき、これにより自動外
観検査機による検査を可能にして検査にかかわ
る作業効率を向上しかつ一方では評価精度を高
めることができる。
(2) Conversely, by making the distance between the shielding film and the photomask small or zero, it is possible to prevent defocusing in the optical system of the visual inspection machine, thereby making it possible to perform inspections using automatic visual inspection machines. It is possible to improve the efficiency of related work and, on the other hand, to improve the accuracy of evaluation.

(3) フレームを蛇腹状にしかつ遮蔽膜によりホト
マスクの表、裏面との間に気密空間を画成した
上でこの気密空間内の空気圧力をコントロール
することによりホトマスクと遮蔽膜との間〓寸
法を変化できるようにしているので、単に空気
の供給、吸引を行なうだけで露光、外観検査に
夫々好適な状態を作り出すことができる。
(3) By making the frame bellows-shaped and defining an airtight space between the front and back surfaces of the photomask using a shielding film, and controlling the air pressure in this airtight space, the distance between the photomask and the shielding film is reduced. Since the temperature can be changed, conditions suitable for exposure and visual inspection can be created simply by supplying and suctioning air.

以上本発明者によつてなされた発明を実施例に
もとづき具体的に説明したが、本発明は上記実施
例に限定されるものではなく、その要旨を逸脱し
ない範囲で種々変更可能であることはいうまでも
ない。たとえば、フレームは伸縮可能であれば他
の構成であつてもよく、またこのフレームを伸縮
させる手段は空気圧以外の物理的な手段(たとえ
ば熱)を利用してもよい。更に、ホトマスクのガ
ラス基板の厚さが充分に厚いときには、パターン
の形成されているホトマスクの表面側にのみ遮蔽
膜を形成するようにしてもよい。
Although the invention made by the present inventor has been specifically explained based on the examples above, the present invention is not limited to the above examples, and it is understood that various changes can be made without departing from the gist of the invention. Needless to say. For example, the frame may have other configurations as long as it is expandable, and the means for expanding and contracting the frame may utilize physical means other than air pressure (eg, heat). Further, when the glass substrate of the photomask is sufficiently thick, the shielding film may be formed only on the surface side of the photomask where the pattern is formed.

〔利用分野〕[Application field]

以上の説明では主として本発明者によつてなさ
れた発明をその背景となつた利用分野である半導
体装置の製造用のホトマスクに適用した場合につ
いて説明したが、それに限定されるものではな
く、レチクルはもちろんのこと所謂写真技術に使
用する原板の全てに利用できる。
In the above explanation, the invention made by the present inventor was mainly applied to a photomask for manufacturing semiconductor devices, which is the background field of application, but the invention is not limited to this. Of course, it can be used for all original plates used in so-called photographic techniques.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は考えられるホトマスク構造の断面図、
第2図は本発明の一実施例であるホトマスクの破
断斜視図、第3図A,Bは作用を説明するための
ホトマスクの断面図である。 10……ホトマスク、11a、11b……表、
裏面、12……パターン、13,14……フレー
ム、15,16……遮蔽膜、17,18……補助
フレーム、19,20……チユーブ、21,22
……気密空間、23,24……開閉バルブ、25
……空気コントローラ。
Figure 1 is a cross-sectional view of a possible photomask structure,
FIG. 2 is a cutaway perspective view of a photomask according to an embodiment of the present invention, and FIGS. 3A and 3B are sectional views of the photomask for explaining the operation. 10...Photomask, 11a, 11b...Table,
Back side, 12... Pattern, 13, 14... Frame, 15, 16... Shielding film, 17, 18... Auxiliary frame, 19, 20... Tube, 21, 22
...airtight space, 23, 24...opening/closing valve, 25
...Air controller.

Claims (1)

【特許請求の範囲】 1 透明ガラス基板の光不透過膜が一部に形成さ
れた一表面の周辺部に、前記一表面からの高さを
焦点深度の内外で変化できるフレームの一端縁を
取着し、このフレームの他端縁に、前記透明ガラ
ス基板の一表面をカバーする透明な遮蔽膜を張設
すると共に、前記透明ガラス基板の一表面、フレ
ーム及び透明な遮蔽膜で周囲を囲まれた気密空間
を形成し、前記気密空間内に清浄空気を供給し、
前記透明ガラス基板の一表面から前記透明な遮蔽
膜を離し、焦点深度を超える位置に前記透明な遮
蔽膜を設定できると共に、前記気密空間内の空気
を吸引し、前記透明ガラス基板の一表面に前記透
明な遮蔽膜を近づけて焦点深度の範囲内に前記透
明な遮蔽膜を設定できる、空気コントローラを前
記気密空間内に連通したことを特徴とするホトマ
スク。 2 前記フレームは蛇腹状に形成され、前記気密
空間と空気コントローラはチユーブを通して連通
されることを特徴とする特許請求の範囲第1項に
記載のホトマスク。
[Scope of Claims] 1. One end edge of a frame whose height from the one surface can be varied within and outside the depth of focus is attached to the periphery of one surface of the transparent glass substrate on which the light-opaque film is partially formed. a transparent shielding film covering one surface of the transparent glass substrate is provided on the other edge of the frame, and one surface of the transparent glass substrate is surrounded by the frame and the transparent shielding film. forming an airtight space, supplying clean air into the airtight space,
The transparent shielding film can be separated from one surface of the transparent glass substrate to set the transparent shielding film at a position exceeding the depth of focus, and the air in the airtight space can be sucked to cover the one surface of the transparent glass substrate. A photomask characterized in that an air controller is communicated in the airtight space, and the air controller can bring the transparent shielding film close to set the transparent shielding film within a depth of focus range. 2. The photomask according to claim 1, wherein the frame is formed in a bellows shape, and the airtight space and the air controller are communicated through a tube.
JP58204803A 1983-11-02 1983-11-02 Photomask Granted JPS6097356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58204803A JPS6097356A (en) 1983-11-02 1983-11-02 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58204803A JPS6097356A (en) 1983-11-02 1983-11-02 Photomask

Publications (2)

Publication Number Publication Date
JPS6097356A JPS6097356A (en) 1985-05-31
JPH0544662B2 true JPH0544662B2 (en) 1993-07-07

Family

ID=16496619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58204803A Granted JPS6097356A (en) 1983-11-02 1983-11-02 Photomask

Country Status (1)

Country Link
JP (1) JPS6097356A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060101458A (en) 2003-09-23 2006-09-25 코닌클리케 필립스 일렉트로닉스 엔.브이. Method and apparatus for protecting a reticle used in chip production from contamination
WO2005029182A2 (en) * 2003-09-23 2005-03-31 Koninklijke Philips Electronics N.V. Method and apparatus for protecting a reticle used in chip production from contamination

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5428716A (en) * 1977-08-09 1979-03-03 Furukawa Electric Co Ltd:The Process for producing electroconductive highly heat-resisting aluminum alloy

Also Published As

Publication number Publication date
JPS6097356A (en) 1985-05-31

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