JPH0546991B2 - - Google Patents
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- Publication number
- JPH0546991B2 JPH0546991B2 JP62079692A JP7969287A JPH0546991B2 JP H0546991 B2 JPH0546991 B2 JP H0546991B2 JP 62079692 A JP62079692 A JP 62079692A JP 7969287 A JP7969287 A JP 7969287A JP H0546991 B2 JPH0546991 B2 JP H0546991B2
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- 239000010410 layer Substances 0.000 claims description 117
- 238000000034 method Methods 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 34
- 239000011241 protective layer Substances 0.000 claims description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000007650 screen-printing Methods 0.000 claims description 10
- 229920006254 polymer film Polymers 0.000 claims description 9
- 239000002952 polymeric resin Substances 0.000 claims description 6
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 210000004027 cell Anatomy 0.000 description 54
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 13
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005096 rolling process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003738 black carbon Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
[利用分野]
本発明は集積型の非晶質シリコン薄膜太陽電池
の製造方法に関する。さらに詳しくは、同一基板
上に積層され、複数個の区画された金属電極層、
非晶質シリコン層、透明電極層からなるセルをレ
ーザ光照射により接続した集積型太陽電池の製造
方法に関する。
[従来技術]
非晶質シリコン半導体膜はシランガス等のグロ
ー放電分解法によつて低い基板温度で、広い面積
に均一に堆積でき、基板もガラス、高分子フイル
ム、セラミツク板、金属フオイル等の各種基板が
選択できる為、太陽電池用半導体膜として広く研
究されている。
非晶質シリコン太陽電池の基本構造としては上
記各種基板上に設けられた金属電極層/非晶質シ
リコン半導体層/透明電極層の積層構造が用いら
れている。
非晶質シリコン層堆積の特徴を生かし特開昭59
−34668号公報に開示されたロールツーロール方
式やJapan Journal of Applied Physics誌21巻
3号 413ページ(1982)に掲載されている3室
分離形成法などを用いて金属電極層を設けた大面
積の長尺基板上に非晶質シリコン層を堆積するこ
とは容易である。
又、もう一方の電流取り出し電極の透明電極層
を大面積に設ける事も容易である。しかしながら
太陽電池として上記積層体を働かす為には金属電
極層と透明電極層とにリード端子を取り付ける事
が必要である。さらに、実用化に必要な数十V以
上の出力電圧を得る為には、上記大面積基板上に
設けた太陽電池をレーザスクライブ法等で分割し
その後隣接し合う金属電極層と透明電極層とを直
列接続することが必要である。かかる場合、通常
最下層の金属電極層を露出させて、しかる後隣接
する上部電極層あるいはリード取り出し用電極と
接続する方法がとられている。この金属電極層を
露出させる方法として
非晶質シリコン層堆積時に金属マスクを用い
る方法、
非晶質シリコン層堆積時後、湿式あるいは乾
式のエツチング法を用いシリコン層を除去する
方法、
非晶質シリコン層堆積後、レーザ照射によつ
てシリコン層のみを選択的に溶融、蒸発させて
除去する方法
などが用いられてきた。
これらの方法の中で、の方式は長尺、大面積
のロールツーロール方式に適さないばかりか3室
分離形成法においても、非晶質シリコン堆積時の
加熱過程において、基板とマスクの熱膨張率の違
いによる密着性の悪化の為、非晶質シリコン成分
の回り込みが生じ良好なパターンが得られず且
つ、電気的に良好な金属層表面を露出させること
がむつかしい。
の方式はレジスト塗布とエツチングの組み合
わせによつて可能であるが、レジスト塗布、露
光、洗浄、エツチング等の多数の工程が必要であ
り、安価に大量に太陽電池を製造するには適さな
い。又の方式においてはシリコン層溶融に必要
な高温発生の為、高融点金属を用いた金属電極層
においても損傷が生じ電気的に良好な金属層表面
を露出させる事が出来ないばかりか、Alのごと
き低融点金属ではシリコン層のみを選択的に除去
する事も出来ないのが実状である。
これに対して、特開昭61−214483号公報に開示
の如く、本発明者らは絶縁樹脂層をパターン化し
て設けた後、レーザ光照射により分割加工された
複数個のユニツトセルを直列接続するに際して、
各ユニツトセル上に所定のパターンで良導電性の
接続用電極を形成し、該電極部上にレーザ光を照
射して金属電極層と接続用電極とこれらの間の全
層を溶融し、金属電極層と接続用電極をオーミツ
ク接合させる方法を提案した。
しかしながら、その後の検討で上記接続法にお
いては通常は良好な接続が得られるが、時にレー
ザ光照射により照射中心部で溶融した各構成層が
蒸発・飛散してしまい良好なオーミツク接合が得
られない場合があること、又は蒸発物がセル表面
に飛散しセル特性への悪影響の発生、外観不良が
時に見られること等改善すべき点があることが見
出された。
[発明の目的]
本発明は、上記欠点をなくした、大面積基板上
でのリード端子取り出し用あるいは、分割された
太陽電池セルの直列接続をする為の接続用電極を
金属電極面に接合させる改良された簡便な集積型
太陽電池の製造方法を提供することを目的とする
ものである。
[発明の構成及び作用]
上述の目的は以下の本発明により達成される。
すなわち、本発明は、同一基板上に積層され、複
数個の区画された金属電極層、光起電力層となる
非晶質シリコン半導体層及び透明電極層よりなる
セルをセルの接続部をレーザ光により溶融して接
続した集積型太陽電池の製造方法において、各セ
ル上に隣接セルの接続部に亘る所定のパターンで
良導電性材の接続用電極を形成した後、少なくと
もセルの接続用電極の接続部上に表面保護層を設
けた後、該接続用電極部にレーザ光を照射して金
属電極層と接続用電極とこれらの間の全層を溶融
し、金属電極層と接続用電極をオーミツク接合さ
せることを特徴とする集積型太陽電池の製造方法
である。
上述の本発明は、従来法の前述の欠点を解消す
る為種々検討の結果、少なくともセルの接続部上
に表面保護層を設けた後接続用電極部にレーザ光
を照射し、金属電極層、非晶質シリコン半導体
層、透明電極層及び接続用電極の一部を溶融して
オーミツク接合を得る場合には、表面保護層によ
つて溶融物の蒸発・飛散が防止され、外観の良好
な、接合抵抗の低いオーミツク接合が得られるこ
とを見い出し、なされたものである。
本発明は、上述の通り接続個所に接続用電極を
形成後表面保護層を設けた最終セル形態でレーザ
光を照射するのみで直列接続が得られる非常に簡
単で且つロールツーロール法の大量生産法に適し
た方法である。
又、、基板を光透光性基板としてその基板側か
らレーザ光照射を行う時、分割加工された金属電
極層位置を基準にレーザ光照射が可能であり、レ
ーザ光照射位置精度の向上が得られた。その為接
続電極幅を狭幅化出来、太陽電池としての有効光
入射面積の拡大が可能となつた。
以下本発明の詳細を具体的に説明する。
本発明の電気絶縁性の基板としては電気絶縁材
からなる全ての基板が適用できるが、前述した理
由から光透光性の基板が特に好ましく適用され
る。具体的には高分子フイルム、セラミツク板、
ガラス板あるいは絶縁性層を表面に設けた金属フ
オイル層等が使用出来るが、好ましくはロールツ
ーロール法によつて構成層を順次長尺の送行する
基板上に堆積出来、大量生産に適した高分子フイ
ルムが使用される。高分子フイルムとしては、非
晶質シリコン堆積に必要な耐熱性を有する透光性
の高分子フイルムならどれでも良いが、好ましく
は機械的特性面の優れたポリエチレンテレフタレ
ート(PET)フイルム、ポリエチレンナフタレ
ートフイルム、ポリエーテルサルホンフイルムな
どが用いられる。基板上に設けられる金属電極層
としては、Al,Agなどの電気導電性の良好な、
1000℃以下の融点をもつ金属を主成分とし、Ti,
W,Pt,Co、Cr,ニクロム、ステンレスなどの
単体金属、合金金属薄膜との積層構造層が用いら
れる。
又、これらの金属電極層は、その電気抵抗の低
下及び機械的強度の観点から、0.3μm以上の厚み
が望ましい。
非晶質シリコン層は、光起電力層として公知の
ものが全て適用でき、特に限定されないが、具体
的には既に公知のシランガス、ジシランガス等の
グロー放電分解を用いたプラズマCVD法を用い
て形成されたpin形の積層光起電力層等がある。
なお、かかる非晶質シリコン光起電力層として
は、pin/pin/,pin/pin/pin等の多層タンデ
ム構造はもちろんのこと非晶質シリコンゲルマニ
ウム、非晶質シリコンカーバイドなどのナローバ
ンドギヤツプあるいはワイドバンドキヤツプ半導
体層を適時用いる事も出来る。
又透明電極層も、特に限定されず、公知のもの
がそのまま適用でき、各種金属酸化物が好ましく
適用される。具体的には酸化インジウム、酸化ス
ズ、スズ酸カドニウム、酸化インジウム、スズ等
の金属酸化物層あるいは金属薄膜と酸化物誘電体
の積層体等が適用される。
収集電極あるいは電池間接続用電極層となる良
導電性の接続用電極としては金、銀、銅、Al、
ニツケル等のいずれか又はこれらの合金等を主体
とする層が適用される。この接続用電極は、真空
蒸着法、スパツタリング法などの物理的堆積方法
を用いパターン化して透明電極層上に形成され
る。なお、この際の薄膜は、0.5μm以上が好まし
い。又メツキ法などの化学的方法によつて接続用
電極を設けることもでき、この場合の膜厚は前述
と同様である。さらに金、銀、銅、Al、ニツケ
ル、炭素(カーボン)等の微粉末を用いた導電性
樹脂をスクリーン印刷法等で設ける方法が適用で
きる。このスクリーン印刷法は連続生産性の点か
ら望ましい。印刷された良導電性層の厚みとして
5μm以上が電気抵抗のために必要である。
レーザ光としては各構成層が吸収し得る波長域
の光なら良く、0.2μmの波長光が用いられるが、
好ましくは現在工業的にも広く利用されている
YAGレーザーが使用される。
集積型太陽電池を形成するためにはまずユニツ
トセルに各構成層を分割加工することが必要であ
るが、特開昭61−214483号公報に開示の如く、黒
色絶縁樹脂層をパターン化して設けた後、レーザ
光を照射、走行させる事によつて可能である。分
割加工された各ユニツトセルを接続する為に前記
接続用電極層を前記方法を用いて形成される。
セルに設けられるレーザ光照射時の溶融物の蒸
発、飛散を防止する表面保護層としては、レーザ
照射時に溶融しない耐熱性を有するものであれば
良く、ガラス、透明セラミツク板、樹脂層、高分
子フイルム等が使用出来る。中でもロールツーロ
ール法によつて積層可能な高分子フイルムが好ま
しく使用出来、更にはスクリーン印刷法によつて
簡便に形成可能な高分子樹脂層が生産性の上から
特に好ましく適用される。なお、セルの光入射側
全面に表面保護層を設ける場合は、表面保護層は
透明とする必要がある。かかる表面保護層として
用いられる高分子フイルムとしてはポリエチレン
テレフタレートフイルム、ポリエチレンナフタレ
ートフイルム、ポリカーボネートフイルムなどの
透明性にすぐれたフイルムが選択され、ラミネー
ト法によつてセル表面に設けられる。この時のセ
ル裏面側にも保護層としてラミネートする事も可
能である。
又透明高分子樹脂層としてはエポキシ系、フエ
ノール系、ポリエステル系、メラミン系、ポリウ
レタン系、ポリイミド系等の各樹脂の中から、可
撓性、防湿性などを考慮して、太陽電池の使用目
的に合つた樹脂が選択される。
樹脂層を用いる場合には太陽電池から出力を取
り出す為の開口部を任意の形状に開口して設ける
事が出来、一層の生産性向上を図る事が可能であ
る。
上述の保護層は、少なくとも接続用電極の接続
部に対応するセルの基板と反対側の面に設ければ
良いことはその作用から明らかで、光電変換効率
からは接続部上のみに設けるのが好ましいが、生
産性面等から出力取り出し部等をパターン化して
全面に設けても良く、更に高分子フイルム等を用
いて基板側にも設け封止用保護層と兼用させても
良い。モジユール封止用保護層と兼用させると変
換効率面でも生産性面でも有利である。用途に応
じて適宜選択される。
表面保護層を設けたセルは裏面等よりレーザ光
が照射され、接続用電極と下部の金属電極層とが
溶融、直列接続される。レーザ光照射時のパワー
はセルに用いられる基板材料、金属電極層材料、
接続用電極材料、さらに裏面保護層の有無および
その材料によつて実験的に選択される。
又、レーザ光照射位置は、特開昭61−214483号
公報に記載された方法に従つて、レーザスクライ
ブ法によりユニツトセルに分割加工されたスクラ
イブ溝を目印に決定される。
以下本発明の実施例を示す。
[実施例 1]
第1図は実施例の各ステツプを説明するモジユ
ールの断面図、第2図は実施例でのモジユール形
成のための絶縁層の形成パターンを示す平面図、
第3図は実施例でのモジユール形成のための接続
用電極のパターンを示す平面図である。
高分子フイルム基板1として、100μm厚のポリ
エチレンテレフタレートフイルム(PET)を用
いた。まず該フイルム基板1をDCマグネトロン
スパツタ装置に装着し、10-3torr台のAr雰囲気中
でアルミニウム層(Al)0.4μm、及びステンレス
層(SS)100Åを連続して順次堆積し、金属電極
層2を長尺フイルム基板1上に設けた(第1図参
照)。さらにこのPET/Al/SS積層体上に光起
電力層となるpin型の非晶質シリコン層3を特開
昭59−34668号公報に開示されているロールツー
ロール方式によつて長尺で大面積に連続的のホウ
素(B)ドープのP層300Å、i層0.5μm、燐
(P)ドープのn層200Åとなるように堆積した
(第1図A)。同一基板上で3個のセルCを直列接
続した太陽電池を形成する為に10cm×10cmの大面
積のPET/Al/SS/非晶質シリコン層の積層体
上に第2図に示したセル分解パターンに従つてス
クリーン印刷法で黒色絶縁ペーストを印刷し、分
割加工の際の分割溝周辺での電極間絶縁不良防止
のための電気絶縁層4a,4bを形成した(第1
図B)。その後、その上に電子ビーム蒸着法によ
り酸化インジユームからなる透明電極層5を厚さ
600Åに均一に堆積した(第1図C)。
次いで、YAGレーザを用いたレーザスクライ
ブ法により、第2図に示す分割パターンに従つて
3.3cm×10cmの3個のセルCに以下のようにして
分割した。すなわち、YAGレーザをQスイツチ
周波数2KHz、パワー(尖頭値出力)1KW、ビ
ーム径100μm、走査速度3.2cm/secに調節して、
電気絶縁層4aに沿つてセルCの分割のため基板
1を除いた全層を蒸発させたセル分割溝6を形成
し、電気絶縁層4bに沿つてYAGレーザをパワ
ーのみ尖頭値出力150Wとし、その他は前記と同
条件で透明電極層5のみを蒸発させて接続用電極
部Aを分離する電極分割溝7を形成して、セル分
割した(第1図D)。
次いで第1図Eに示すごとくレーザ光照射によ
つて穿設されたセル分割溝6及び電極分割溝7に
電気絶縁性の樹脂がスクリーン印刷法、コーテイ
ング法等で充填されて、閉鎖樹脂層8が形成され
る。閉鎖樹脂層8を形成する電気絶縁性の樹脂に
は、前述の電気絶縁層4a,4bの樹脂がそのま
ま適用できる。
その後、スクリーン印刷法で銀導電性樹脂を第
3図に示す以下のパターンに厚さ13μmに堆積し、
収集電極を兼ねた接続用電極及びリード取り出し
電極を形成した(第1図F)。すなわち、収集電
極9でバスバー部10が接続部となるように接続
用電極部A上に位置し、バスバー部10からその
直角方向に所定間隔でフインガー部9を隣接セル
に亘るように配設したパターンに設けてある。な
お第3図の右端のセルCのバスバー部10はリー
ド取り出し用の電極となる。
上記太陽電池を表面保護層11として光透光性
に優れた厚さ50μmのポリエステルフイルムを透
明接着層12を介してラミネイトし、その最表面
を保護する構造にした(第1図G)。その後、裏
面よりYAGレーザ光13をセルの分割に用いた
セル分割溝6に沿つた接続用電極部Aに照射し
た。このときのレーザ出力はQスイツチ周波数
2KHzで、平均出力3Wであつた。
従来の作成法である。ラミネイト前に表面から
接続用電極部Aにレーザ光を照射して溶融接続し
た同じ構成の3直列のモジユールを同じ厚み
(50μm)のポリエステルフイルム保護層でラミネ
イトした場合(比較例1)の光電変換効率
(EFF)に比較して、上述の裏面レーザ照射した
本発明のモジユール(実施例1)では、表1に示
したごとく発電に寄与する有効面積の増加によつ
て効率の増加が認められた。なお表1のモジユー
ル特性はAM=1,100mW/cm2のソーラシユミ
レーター下での測定値である。
[Field of Application] The present invention relates to a method for manufacturing an integrated amorphous silicon thin film solar cell. More specifically, a plurality of partitioned metal electrode layers stacked on the same substrate,
The present invention relates to a method for manufacturing an integrated solar cell in which a cell consisting of an amorphous silicon layer and a transparent electrode layer is connected by laser beam irradiation. [Prior art] Amorphous silicon semiconductor films can be deposited uniformly over a wide area at low substrate temperatures by glow discharge decomposition using silane gas, etc., and can be deposited on various substrates such as glass, polymer films, ceramic plates, metal foils, etc. Because the substrate can be selected, it is widely studied as a semiconductor film for solar cells. The basic structure of an amorphous silicon solar cell is a laminated structure of metal electrode layer/amorphous silicon semiconductor layer/transparent electrode layer provided on the various substrates mentioned above. Utilizing the characteristics of amorphous silicon layer deposition, JP-A-59
A large area where a metal electrode layer is provided using the roll-to-roll method disclosed in Publication No. 34668 or the three-chamber separation formation method published in Japan Journal of Applied Physics, Vol. 21, No. 3, page 413 (1982). It is easy to deposit an amorphous silicon layer on a long substrate. Further, it is also easy to provide the transparent electrode layer of the other current extraction electrode over a large area. However, in order for the above-mentioned laminate to function as a solar cell, it is necessary to attach lead terminals to the metal electrode layer and the transparent electrode layer. Furthermore, in order to obtain an output voltage of several tens of V or more, which is necessary for practical use, the solar cell provided on the large-area substrate must be divided using a laser scribing method, etc., and then the adjacent metal electrode layer and transparent electrode layer must be separated. It is necessary to connect them in series. In such a case, a method is usually used in which the lowest metal electrode layer is exposed and then connected to the adjacent upper electrode layer or lead extraction electrode. Methods for exposing this metal electrode layer include: using a metal mask when depositing the amorphous silicon layer; removing the silicon layer using wet or dry etching after depositing the amorphous silicon layer; A method has been used in which after layer deposition, only the silicon layer is selectively melted and evaporated by laser irradiation to remove it. Among these methods, the method is not only unsuitable for long, large-area roll-to-roll methods, but also for the three-chamber separation method, thermal expansion of the substrate and mask occurs during the heating process during amorphous silicon deposition. Due to the deterioration of adhesion due to the difference in ratio, the amorphous silicon component wraps around, making it difficult to obtain a good pattern and making it difficult to expose the electrically good surface of the metal layer. Although this method is possible by combining resist coating and etching, it requires many steps such as resist coating, exposure, cleaning, and etching, and is not suitable for manufacturing solar cells in large quantities at low cost. In the other method, the high temperature required to melt the silicon layer causes damage to the metal electrode layer using a high-melting point metal, making it impossible to expose the electrically good metal layer surface. The reality is that it is not possible to selectively remove only the silicon layer with low melting point metals such as metals. In contrast, as disclosed in Japanese Patent Application Laid-Open No. 61-214483, the present inventors patterned and provided an insulating resin layer, and then connected in series a plurality of unit cells that were divided by laser beam irradiation. On the occasion of
A highly conductive connection electrode is formed in a predetermined pattern on each unit cell, and a laser beam is irradiated onto the electrode portion to melt the metal electrode layer, the connection electrode, and all the layers between them. We proposed a method for ohmic bonding between layers and connecting electrodes. However, subsequent studies revealed that although a good connection is usually obtained using the above connection method, sometimes the constituent layers melted at the center of the irradiation due to laser beam irradiation evaporate and scatter, making it impossible to obtain a good ohmic connection. It has been found that there are some issues that need to be improved, such as evaporated matter scattering on the cell surface, adversely affecting the cell characteristics, and sometimes causing poor appearance. [Object of the invention] The present invention eliminates the above-mentioned drawbacks and provides a method for bonding a connecting electrode to a metal electrode surface for taking out lead terminals on a large-area substrate or connecting divided solar cells in series. The object of the present invention is to provide an improved and simple method for manufacturing an integrated solar cell. [Structure and operation of the invention] The above-mentioned objects are achieved by the present invention as described below.
That is, the present invention provides a cell comprising a plurality of partitioned metal electrode layers, an amorphous silicon semiconductor layer serving as a photovoltaic layer, and a transparent electrode layer that are stacked on the same substrate, and the connecting portion of the cell is exposed to laser light. In a method for manufacturing an integrated solar cell that is melted and connected using After providing a surface protective layer on the connection part, the connection electrode part is irradiated with laser light to melt the metal electrode layer, the connection electrode, and all the layers between them, and the metal electrode layer and the connection electrode are melted. This is a method for manufacturing an integrated solar cell characterized by ohmic bonding. The above-mentioned present invention was developed as a result of various studies to solve the above-mentioned drawbacks of the conventional method. After providing a surface protective layer on at least the connecting portion of the cell, the connecting electrode portion is irradiated with a laser beam, and a metal electrode layer, When obtaining an ohmic junction by melting part of the amorphous silicon semiconductor layer, transparent electrode layer, and connection electrode, the surface protective layer prevents evaporation and scattering of the melt, resulting in a good appearance. This method was developed based on the discovery that an ohmic junction with low junction resistance could be obtained. As mentioned above, the present invention is very simple and mass-produced using the roll-to-roll method, in which series connection can be obtained by simply irradiating a laser beam in the final cell form in which connection electrodes are formed at connection points and a surface protective layer is provided. This is a legally appropriate method. Furthermore, when the substrate is a light-transmitting substrate and the laser beam is irradiated from the substrate side, the laser beam can be irradiated based on the position of the divided metal electrode layer, which improves the accuracy of the laser beam irradiation position. It was done. Therefore, the width of the connecting electrode can be narrowed, making it possible to expand the effective light incident area as a solar cell. The details of the present invention will be specifically explained below. Although any substrate made of an electrically insulating material can be used as the electrically insulating substrate of the present invention, a light-transmitting substrate is particularly preferably used for the reasons described above. Specifically, polymer films, ceramic plates,
A glass plate or a metal foil layer with an insulating layer on the surface can be used, but it is preferable to use a roll-to-roll method, in which the constituent layers can be deposited one after another on a long moving substrate, making it suitable for mass production. Molecular films are used. The polymer film may be any light-transmitting polymer film that has the heat resistance necessary for amorphous silicon deposition, but preferably polyethylene terephthalate (PET) film or polyethylene naphthalate film, which have excellent mechanical properties. Film, polyether sulfone film, etc. are used. The metal electrode layer provided on the substrate is made of a material with good electrical conductivity such as Al or Ag.
The main ingredients are metals with melting points below 1000℃, including Ti,
Single metals such as W, Pt, Co, Cr, nichrome, and stainless steel, and laminated structure layers with alloy metal thin films are used. Further, these metal electrode layers preferably have a thickness of 0.3 μm or more from the viewpoint of reducing electrical resistance and mechanical strength. The amorphous silicon layer can be formed using any known photovoltaic layer, and is not particularly limited. Specifically, it can be formed using a plasma CVD method using glow discharge decomposition of a known silane gas, disilane gas, etc. There are pin-shaped laminated photovoltaic layers, etc.
The amorphous silicon photovoltaic layer may include not only multilayer tandem structures such as pin/pin/, pin/pin/pin, but also narrow band gap structures such as amorphous silicon germanium and amorphous silicon carbide. Alternatively, a wideband cap semiconductor layer can be used as appropriate. Further, the transparent electrode layer is not particularly limited, and any known material can be used as is, and various metal oxides are preferably used. Specifically, a metal oxide layer such as indium oxide, tin oxide, cadmium stannate, indium oxide, tin, or a laminate of a metal thin film and an oxide dielectric material is applied. Gold, silver, copper, Al,
A layer mainly composed of nickel or an alloy thereof is applied. This connection electrode is patterned and formed on the transparent electrode layer using a physical deposition method such as a vacuum evaporation method or a sputtering method. Note that the thin film at this time preferably has a thickness of 0.5 μm or more. Further, the connecting electrode can also be provided by a chemical method such as plating, and the film thickness in this case is the same as described above. Furthermore, a method of providing a conductive resin using fine powder of gold, silver, copper, Al, nickel, carbon, etc. by screen printing or the like can be applied. This screen printing method is desirable from the viewpoint of continuous productivity. As the thickness of the printed conductive layer
5 μm or more is required for electrical resistance. As the laser light, any light in the wavelength range that can be absorbed by each constituent layer is sufficient, and light with a wavelength of 0.2 μm is used.
Preferably, it is currently widely used industrially.
A YAG laser is used. In order to form an integrated solar cell, it is first necessary to divide each constituent layer into a unit cell, but as disclosed in Japanese Patent Application Laid-Open No. 61-214483, a black insulating resin layer was patterned and provided. This can be done by irradiating and running a laser beam. In order to connect each divided unit cell, the connection electrode layer is formed using the method described above. The surface protective layer provided on the cell to prevent evaporation and scattering of the melt during laser beam irradiation may be made of any material that has heat resistance and does not melt during laser irradiation, such as glass, transparent ceramic plate, resin layer, polymer, etc. Film, etc. can be used. Among them, a polymer film that can be laminated by a roll-to-roll method is preferably used, and a polymer resin layer that can be easily formed by a screen printing method is particularly preferably used from the viewpoint of productivity. Note that when a surface protective layer is provided on the entire surface of the light incident side of the cell, the surface protective layer needs to be transparent. As the polymer film used as the surface protective layer, a film with excellent transparency such as polyethylene terephthalate film, polyethylene naphthalate film, polycarbonate film, etc. is selected, and is provided on the cell surface by a lamination method. At this time, it is also possible to laminate the back side of the cell as a protective layer. For the transparent polymer resin layer, choose from epoxy, phenol, polyester, melamine, polyurethane, polyimide, and other resins, taking into consideration flexibility, moisture resistance, etc., depending on the intended use of the solar cell. A suitable resin is selected. When a resin layer is used, openings for extracting output from the solar cell can be provided in any desired shape, making it possible to further improve productivity. It is clear from its effect that the above-mentioned protective layer should be provided at least on the surface opposite to the cell substrate corresponding to the connection part of the connection electrode, and from the viewpoint of photoelectric conversion efficiency, it is recommended to provide it only on the connection part. Although it is preferable, from the viewpoint of productivity, the output extraction portion may be patterned and provided on the entire surface, and may also be provided on the substrate side using a polymer film or the like so as to serve as a protective layer for sealing. If it is used also as a protective layer for module sealing, it is advantageous in terms of conversion efficiency and productivity. It is selected as appropriate depending on the purpose. The cell provided with the surface protective layer is irradiated with laser light from the back side, etc., and the connecting electrode and the lower metal electrode layer are melted and connected in series. The power during laser beam irradiation depends on the substrate material used in the cell, the metal electrode layer material,
The connection electrode material is experimentally selected depending on the presence or absence of a backside protective layer and its material. Further, the laser beam irradiation position is determined using the scribe grooves that are divided into unit cells by the laser scribing method according to the method described in Japanese Patent Application Laid-Open No. 61-214483. Examples of the present invention will be shown below. [Example 1] FIG. 1 is a cross-sectional view of a module explaining each step of the example, and FIG. 2 is a plan view showing the formation pattern of an insulating layer for forming the module in the example.
FIG. 3 is a plan view showing a pattern of connection electrodes for forming a module in the embodiment. As the polymer film substrate 1, a 100 μm thick polyethylene terephthalate film (PET) was used. First, the film substrate 1 was mounted on a DC magnetron sputtering device, and an aluminum layer (Al) of 0.4 μm and a stainless steel layer (SS) of 100 Å were successively deposited in an Ar atmosphere of 10 -3 torr. A layer 2 was provided on a long film substrate 1 (see Figure 1). Further, on this PET/Al/SS laminate, a pin-type amorphous silicon layer 3, which will become a photovoltaic layer, is formed into a long length by the roll-to-roll method disclosed in Japanese Patent Application Laid-Open No. 59-34668. A boron (B)-doped P layer of 300 Å, an i-layer of 0.5 μm, and a phosphorus (P)-doped N layer of 200 Å were deposited over a large area (FIG. 1A). In order to form a solar cell in which three cells C are connected in series on the same substrate, the cell shown in Figure 2 is placed on a stack of PET/Al/SS/amorphous silicon layers with a large area of 10 cm x 10 cm. A black insulating paste was printed using a screen printing method according to the decomposition pattern, and electrical insulating layers 4a and 4b were formed to prevent poor insulation between electrodes around the dividing grooves during dividing process (first
Figure B). Thereafter, a transparent electrode layer 5 made of indium oxide is deposited on top of it by electron beam evaporation.
It was deposited uniformly to a thickness of 600 Å (Fig. 1C). Next, by a laser scribing method using a YAG laser, the parts are divided according to the division pattern shown in Figure 2.
It was divided into three cells C of 3.3 cm x 10 cm as follows. In other words, the YAG laser was adjusted to a Q-switch frequency of 2 KHz, power (peak output) of 1 KW, beam diameter of 100 μm, and scanning speed of 3.2 cm/sec.
Along the electrical insulating layer 4a, a cell dividing groove 6 is formed by evaporating all layers except for the substrate 1 in order to divide the cell C, and along the electrical insulating layer 4b, a YAG laser is used with a peak output of 150 W. Other than that, under the same conditions as above, only the transparent electrode layer 5 was evaporated, and electrode dividing grooves 7 for separating the connecting electrode portions A were formed to divide the cell into cells (FIG. 1D). Next, as shown in FIG. 1E, the cell dividing grooves 6 and electrode dividing grooves 7 formed by laser beam irradiation are filled with electrically insulating resin by screen printing, coating, etc. to form a closing resin layer 8. is formed. As the electrically insulating resin forming the closing resin layer 8, the resins for the electrically insulating layers 4a and 4b described above can be used as they are. Thereafter, silver conductive resin was deposited to a thickness of 13 μm in the following pattern shown in Figure 3 using a screen printing method.
A connection electrode that also served as a collection electrode and a lead extraction electrode were formed (FIG. 1F). That is, the busbar part 10 of the collecting electrode 9 was located on the connecting electrode part A so as to serve as a connecting part, and the finger parts 9 were arranged from the busbar part 10 at predetermined intervals in a direction perpendicular to the busbar part 10 so as to span adjacent cells. It is provided in the pattern. Note that the bus bar portion 10 of the cell C at the right end in FIG. 3 serves as an electrode for lead extraction. The above solar cell was laminated with a 50 μm thick polyester film having excellent light transmittance as a surface protective layer 11 via a transparent adhesive layer 12 to form a structure that protects the outermost surface (FIG. 1G). Thereafter, a YAG laser beam 13 was irradiated from the back surface onto the connecting electrode portion A along the cell dividing groove 6 used for dividing the cells. The laser output at this time is the Q switch frequency
The average output was 3W at 2KHz. This is the conventional method. Photoelectric conversion when three series modules with the same configuration, which were fused and connected by irradiating the connecting electrode part A from the surface with a laser beam before lamination, are laminated with a polyester film protective layer of the same thickness (50 μm) (Comparative Example 1) Compared to the efficiency (EFF), in the module of the present invention (Example 1) whose back side was irradiated with the laser described above, an increase in efficiency was observed due to an increase in the effective area contributing to power generation, as shown in Table 1. . The module characteristics in Table 1 are measured values under a solar simulator with AM=1,100 mW/cm 2 .
【表】
[実施例 2]
実施例1と透明保護層を除いて同じ構成で、第
4図に示す4個のセルを直列接続したモジユール
を実施例1と同じようにして以下の通り作成し
た。すなわち、実施例1と同じく100μm厚の
PETフイルム基板上にAl/SSの金属電極層、pin
型の非晶質シリコン層を順次堆積した後、第4図
Aに示す大きさ1cm×1cmのユニツトセルCを4
個直列接続するパターンで黒色の電気絶縁層4
a,4bを印刷した。その後実施例1と同様に酸
化インジユーム層からなる透明電極層を真空中で
堆積し、次いでYAGレーザ光により電気絶縁層
4a,4b上を走査する事によつてセルを各ユニ
ツトセルCに分割加工した。なおレーザ光走査条
件等も実施例1と同じである。
そして、4個のユニツトセルを直列接続する為
の接続用電極を、黒色のカーボン導電性樹脂を第
4図Bのパターンですなわちバスバー部10が接
続部A上に位置し、これからの隣接のユニツトセ
ルC上に亘るフインガー部9を有するパターンで
スクリーン印刷して形成した。カーボン導電性樹
脂層の厚みは20μmであつた。
次いで表面保護層11を透明高分子樹脂層を用
い、以下のように形成した。透明高分子樹脂層と
してはフエノール樹脂を用いてスクリーン印刷法
で15μmの厚さに設けた。この時フエノール樹脂
層を第4図Cの如くパターン化し取り出し電極用
開口部11aを設けて印刷する事によつて直列接
続後にモジユール両端からのリード電極取り出し
を容易化する事が出来た。
その後、裏面よりYAGレーザ光をQスイツチ
周波数2KHz、平均出力3Wで照射した。表2に示
したごとく、発現に寄与する有効面積の増加によ
つて効率の増加が認められ、外観的にも良好なモ
ジユール(実施例2)が得られた。
なお表2には比較例2として、表面保護層なし
で同じようにレーザ光で溶融接続し、その後実施
例2の表面保護層と同じ保護層を設けた同じ構成
のモジユールの測定結果を示した。なお表2の特
性は200ルツクスの白色蛍光灯下での測定結果で
ある。[Table] [Example 2] A module having the same configuration as Example 1 except for the transparent protective layer, and having four cells connected in series as shown in Fig. 4, was created in the same manner as in Example 1 as follows. . That is, as in Example 1, a 100 μm thick
Al/SS metal electrode layer on PET film substrate, pin
After sequentially depositing the mold amorphous silicon layers, four unit cells C each having a size of 1 cm x 1 cm as shown in FIG.
A black electrical insulating layer 4 with a pattern of connecting pieces in series.
a and 4b were printed. Thereafter, a transparent electrode layer consisting of an indium oxide layer was deposited in a vacuum in the same manner as in Example 1, and then the cell was divided into unit cells C by scanning the electric insulating layers 4a and 4b with a YAG laser beam. . Note that the laser beam scanning conditions and the like are also the same as in Example 1. Connection electrodes for connecting four unit cells in series are made of black carbon conductive resin in the pattern shown in FIG. A pattern having finger portions 9 extending over the top was formed by screen printing. The thickness of the carbon conductive resin layer was 20 μm. Next, a surface protective layer 11 was formed using a transparent polymer resin layer in the following manner. The transparent polymer resin layer was formed using a phenolic resin to a thickness of 15 μm by screen printing. At this time, by patterning the phenol resin layer as shown in FIG. 4C and printing with openings 11a for lead electrodes, it was possible to easily take out lead electrodes from both ends of the module after series connection. Thereafter, a YAG laser beam was irradiated from the back side with a Q-switch frequency of 2KHz and an average output of 3W. As shown in Table 2, an increase in efficiency was observed due to an increase in the effective area contributing to expression, and a module (Example 2) with good appearance was obtained. Table 2 shows, as Comparative Example 2, the measurement results of a module with the same structure that was similarly fused and connected with a laser beam without a surface protective layer, and then provided with the same protective layer as the surface protective layer of Example 2. . The characteristics in Table 2 are the results of measurements under a 200 lux white fluorescent lamp.
【表】
[実施例 3]
PETフイルムを基板とする実施例1と同じ構
成の太陽電池の直列接続部での接続抵抗を測定し
た。
実施例1で得られたPET/Al/SS/非晶質シ
リコン層の積層体上に実施例1と同じく黒色の電
気絶縁層を設け、ITO層からなる透明電極層を堆
積後レーザ光照射でセルを分割加工した。接続用
電極として銀導電性樹脂を印刷後、表面保護層と
して50μmのPETフイルムをラミネートし、裏面
よりレーザ平均出力3W Qスイツチ周波数2KHz
で照射し溶融して直列接続を行なつた。[Table] [Example 3] The connection resistance at the series connection portion of a solar cell having the same configuration as Example 1 and using a PET film as a substrate was measured. A black electric insulating layer was provided on the PET/Al/SS/amorphous silicon layer laminate obtained in Example 1 as in Example 1, and a transparent electrode layer made of an ITO layer was deposited and then irradiated with laser light. The cell was divided into parts. After printing silver conductive resin as a connection electrode, 50μm PET film is laminated as a surface protection layer, and the average laser output is 3W and Q switch frequency is 2KHz from the back side.
They were then irradiated and melted to make a series connection.
第1図A〜Gは、実施例1のモジユールの構成
及びその形成の工程を示した側断面図、第1図F
は第3図A−B線での部分側断面図、第2図は該
実施例1のモジユール形成の為の電気絶縁層形成
パターンを説明する平面図、第3図は該実施例1
のモジユールの収集電極及び接続用電極のパター
ンを示す平面図、第4図A〜Cは実施例2のモジ
ユールの電気絶縁層、収集電極及び接続用電極、
表面保護層の夫々の形成パターンを示す平面図で
ある。
1……基板、2……金属電極層、3……非晶質
シリコン層、4a,4b……電気絶縁層、5……
透明電極層、6……セル分割溝、7……電極分割
溝、8……閉鎖樹脂層、9……収集電極部、10
……バスバー部、11……表面保護層、12……
接着層。
1A to 1G are side sectional views showing the structure of the module of Example 1 and the process of its formation, and FIG. 1F
3 is a partial side sectional view taken along the line A-B in FIG. 3, FIG. 2 is a plan view illustrating the electrical insulating layer formation pattern for forming a module in Example 1, and FIG. 3 is a partial side sectional view taken along line A-B in FIG.
FIGS. 4A to 4C are plan views showing patterns of the collecting electrode and connection electrode of the module of Example 2, and FIGS.
FIG. 3 is a plan view showing formation patterns of respective surface protective layers. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Metal electrode layer, 3... Amorphous silicon layer, 4a, 4b... Electrical insulating layer, 5...
Transparent electrode layer, 6... Cell dividing groove, 7... Electrode dividing groove, 8... Closing resin layer, 9... Collection electrode section, 10
... Busbar part, 11 ... Surface protective layer, 12 ...
Adhesive layer.
Claims (1)
金属電極層、光起電力層となる非晶質シリコン層
及び透明電極層よりなるセルをセルの接続部をレ
ーザ光により溶融して接続した集積型太陽電池の
製造方法に於いて、各セル上に隣接セルの接続部
に亘る所定のパターンで良導電性材の接続用電極
を形成した後に少なくともセルの接続用電極の接
続部上に表面保護層を設けた後、接続部にレーザ
光を照射し、金属電極層と接続用電極とこれらの
間の全層を溶融し、金属電極層と接続用電極をオ
ーミツク接合させることを特徴とする集積型太陽
電池の製造方法。 2 前記基板を光透光性の基板とし、前記レーザ
光照射が基板面から接続用電極部に向かつて成さ
れる特許請求の範囲第1項記載の集積型太陽電池
の製造方法。 3 透明な表面保護層をセルの略全面に積層する
特許請求の範囲第1項若しくは第2項記載の集積
型太陽電池の製造方法。 4 前記表面保護層がスクリーン印刷法で設けた
高分子樹脂層からなる特許請求の範囲第1項〜第
3項記載のいずれかの集積型太陽電池の製造方
法。 5 前記スクリーン印刷法で設けた高分子樹脂表
面保護層が太陽電池出力取り出し用開口部を有す
るパターンで形成されている特許請求の範囲第4
項記載の集積型太陽電池の製造方法。 6 前記基板が長尺の高分子フイルムである特許
請求の範囲第1項〜第5項記載のいずれかの集積
型太陽電池の製造方法。[Scope of Claims] 1 A cell consisting of a plurality of partitioned metal electrode layers, an amorphous silicon layer serving as a photovoltaic layer, and a transparent electrode layer stacked on the same substrate is exposed to a laser beam at the connection portion of the cell. In a method for manufacturing an integrated solar cell that is melted and connected using After providing a surface protective layer on the connection part, the connection part is irradiated with laser light to melt the metal electrode layer, the connection electrode, and all the layers between them, and ohmic-bond the metal electrode layer and the connection electrode. A method for manufacturing an integrated solar cell, characterized by: 2. The method of manufacturing an integrated solar cell according to claim 1, wherein the substrate is a light-transmitting substrate, and the laser beam irradiation is performed from the substrate surface toward the connecting electrode portion. 3. A method for manufacturing an integrated solar cell according to claim 1 or 2, wherein a transparent surface protective layer is laminated over substantially the entire surface of the cell. 4. The method for manufacturing an integrated solar cell according to any one of claims 1 to 3, wherein the surface protective layer is a polymer resin layer provided by a screen printing method. 5. Claim 4, wherein the polymer resin surface protective layer provided by the screen printing method is formed in a pattern having openings for taking out the output of the solar cell.
A method for manufacturing an integrated solar cell as described in Section 1. 6. The method for manufacturing an integrated solar cell according to any one of claims 1 to 5, wherein the substrate is a long polymer film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079692A JPS63246878A (en) | 1987-04-02 | 1987-04-02 | Manufacture of integrated solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079692A JPS63246878A (en) | 1987-04-02 | 1987-04-02 | Manufacture of integrated solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63246878A JPS63246878A (en) | 1988-10-13 |
| JPH0546991B2 true JPH0546991B2 (en) | 1993-07-15 |
Family
ID=13697256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62079692A Granted JPS63246878A (en) | 1987-04-02 | 1987-04-02 | Manufacture of integrated solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63246878A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2774136B2 (en) * | 1989-03-31 | 1998-07-09 | 帝人株式会社 | Manufacturing method of amorphous silicon solar cell |
-
1987
- 1987-04-02 JP JP62079692A patent/JPS63246878A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63246878A (en) | 1988-10-13 |
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