Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0547933B2 - - Google Patents
[go: Go Back, main page]

JPH0547933B2 - - Google Patents

Info

Publication number
JPH0547933B2
JPH0547933B2 JP58076678A JP7667883A JPH0547933B2 JP H0547933 B2 JPH0547933 B2 JP H0547933B2 JP 58076678 A JP58076678 A JP 58076678A JP 7667883 A JP7667883 A JP 7667883A JP H0547933 B2 JPH0547933 B2 JP H0547933B2
Authority
JP
Japan
Prior art keywords
ion
ions
sample surface
sample
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58076678A
Other languages
Japanese (ja)
Other versions
JPS59201357A (en
Inventor
Hiroshi Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP58076678A priority Critical patent/JPS59201357A/en
Publication of JPS59201357A publication Critical patent/JPS59201357A/en
Publication of JPH0547933B2 publication Critical patent/JPH0547933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252Tubes for spot-analysing by electron or ion beams; Microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Tubes For Measurement (AREA)

Description

【発明の詳細な説明】 (イ) 産業上の利用分野 本発明は直径が数μm以下と云つた微小領域の
分析が可能な二次イオン質量分析装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a secondary ion mass spectrometer that is capable of analyzing a minute region with a diameter of several μm or less.

(ロ) 従来技術 二次イオン質量分析計は試料面をアルゴンイオ
ン等による一次イオンビームで照射し、試料面か
ら放出される二次イオンを質量分析するものであ
るが、従来の二次イオン質量分析計では上述した
ような数μm以下のような局所の分析を行うため
にはイオン銃として、大形のデユオプラズマトロ
ン形イオン源と大型の静電レンズ系とを必要とす
るため装置が高価なものとなつた。
(b) Prior art Secondary ion mass spectrometers irradiate a sample surface with a primary ion beam of argon ions, etc., and mass analyze the secondary ions emitted from the sample surface. The analyzer requires a large dual-plasmatron ion source and a large electrostatic lens system as an ion gun in order to perform local analysis of several micrometers or less as mentioned above, making the equipment expensive. It became something.

また一般に電気絶縁性の試料の場合、一次イオ
ンによつて試料が帯電して放出する二次イオンの
電位が変り、分析系の一部であるエネルギー選別
器をイオンが通過できなかつたり、イオン源と材
料間の電位差が小さくなつたりして本分析法が適
用できない場合が多かつた。
Additionally, in the case of an electrically insulating sample, the sample is charged by the primary ions and the potential of the emitted secondary ions changes, causing the ions to be unable to pass through the energy selector that is part of the analysis system, or the ion source In many cases, this analysis method could not be applied because the potential difference between the material and the material became small.

(ハ) 目的 本発明はビーム径が数mmと云つた程度の簡易型
のマイクロビームイオン銃を用いて、しかも絶縁
性試料の微小領域の分析が可能である二次イオン
質量分析計を得ることを目的とする。
(c) Purpose The present invention provides a secondary ion mass spectrometer that uses a simple microbeam ion gun with a beam diameter of several millimeters and is capable of analyzing minute regions of insulating samples. With the goal.

(ニ) 構成 本発明二次イオン質量分析計は、試料面を照射
するマイクロビームのイオン銃例えばBA型イオ
ン銃の他に、0.1〜100μm径のビーム径が得られ
るマイクロビーム電子銃を設け、この電子銃によ
つて試料面上で上記イオン銃から発射される一次
イオンビームによつて照射されている領域内の任
意の点を電子ビームで照射することにより、その
部分のみ一次イオンによる帯電を中和させるよう
にして、その部分からだけの低エネルギーの二次
イオンとほかの部分からの二次イオンを区別する
ことを可能とし、この低エネルギーの二次イオン
を選択して質量分析を行うことを特徴とする。
(d) Configuration The secondary ion mass spectrometer of the present invention is equipped with a microbeam electron gun that can obtain a beam diameter of 0.1 to 100 μm in addition to a microbeam ion gun, such as a BA type ion gun, that irradiates the sample surface. By irradiating an arbitrary point on the sample surface with the electron beam within the area irradiated by the primary ion beam emitted from the ion gun, only that part is charged by the primary ions. By neutralizing it, it is possible to distinguish low-energy secondary ions from that part from secondary ions from other parts, and select these low-energy secondary ions for mass spectrometry. It is characterized by

(ホ) 実施例 第1図は本発明の一実施例を示す。1は一次イ
オンのビームを形成するマイクロビームのイオン
銃で、Fはフイラメント、Gはグリツド、Rはリ
ペラ電極である。リペラ電極R内にアルゴン等の
ガスが導入されており、フイラメントFとグリツ
ドG間で加速された電子によつて同ガスの原子が
イオン化される。Lは静電レンズ系を構成してお
り、一次イオンビームを試料2上に収束させてい
る。なお本イオン銃の場合このイオンを試料上に
収束させることを前提としている。3は電子光学
系で、fはフイラメント、wはウエネルト電極、
l,l1は静電レンズ系で縮小投影系を構成してお
り、試料2表面に電子源の微小像を形成し、その
径は0.1〜100μmの範囲で調節できる。更に走査
電極で電子ビームを試料2の表面でX,Y両方向
へ振らせることができる。イオン銃1と電子光学
系3とは夫々の光軸が試料2の表面で交わるよう
にしてあり、第2図に示すように電子ビームEは
試料2表面上で一次イオンビームIの広い照射範
囲内の微小領域を照射するようになつている。試
料2が電気絶縁性である場合、正の一次イオンの
照射を受けると、照射領域は正に帯電し、帯電し
た電位のため二次イオンのエネルギーに変化が起
る。所が電子ビームEでこの一次イオンによる照
射領域を走査すると、電子ビームで照射されてい
る場所では試料面の一次イオンによる帯電が中和
され、その場所からエネルギー選別器を通過する
ことができる二次イオンが放出されることにな
る。
(E) Embodiment FIG. 1 shows an embodiment of the present invention. 1 is a microbeam ion gun that forms a beam of primary ions, F is a filament, G is a grid, and R is a repeller electrode. A gas such as argon is introduced into the repeller electrode R, and atoms of the gas are ionized by electrons accelerated between the filament F and the grid G. L constitutes an electrostatic lens system, which focuses the primary ion beam onto the sample 2. In the case of this ion gun, it is assumed that the ions are focused onto the sample. 3 is an electron optical system, f is a filament, w is a Wehnelt electrode,
1 and 1 are electrostatic lens systems constituting a reduction projection system, which forms a minute image of the electron source on the surface of the sample 2, the diameter of which can be adjusted in the range of 0.1 to 100 μm. Furthermore, the electron beam can be swung in both the X and Y directions on the surface of the sample 2 using the scanning electrode. The optical axes of the ion gun 1 and the electron optical system 3 intersect on the surface of the sample 2, and as shown in FIG. It is designed to irradiate a minute area within the body. When the sample 2 is electrically insulating, when it is irradiated with positive primary ions, the irradiated area becomes positively charged, and the charged potential causes a change in the energy of the secondary ions. When the area irradiated by the primary ions is scanned with the electron beam E, the charge caused by the primary ions on the sample surface is neutralized in the area irradiated with the electron beam, and the secondary ions that can pass through the energy separator from that area are neutralized. Next ions will be released.

第1図に戻つて、4は球面電場型のイオンエネ
ルギー分析器で、両電極間に一定の電圧をかけて
おくことでエネルギー選別器として作用し、試料
2の表面から放出される低エネルギーの二次イオ
ンだけが通過できるようにしてある。5は質量分
析器で、この実施例では四重極型の質量分析器が
用いられているが、これは磁場型のものでもよ
い。6はイオン検出器であり、その出力信号は増
幅器7で増幅されて記録計8に入力され、記録計
8によつて質量スペクトルが記録される。或は一
つの特定の質量のイオンだけが検出されるように
質量分析器5の印加電圧を設定しておき、増幅器
7の出力をCRT9に輝度信号として入力し、
CRT9と電子光学系3とで同期的に走査させて、
試料面上の特定元素の分布パターンを表示させる
こともできる。
Returning to Figure 1, 4 is a spherical electric field type ion energy analyzer, which acts as an energy selector by applying a constant voltage between both electrodes, and detects low energy emitted from the surface of sample 2. Only secondary ions are allowed to pass through. Reference numeral 5 denotes a mass spectrometer, and although a quadrupole type mass spectrometer is used in this embodiment, a magnetic field type mass spectrometer may also be used. 6 is an ion detector, the output signal of which is amplified by an amplifier 7 and input to a recorder 8, which records a mass spectrum. Alternatively, the applied voltage of the mass spectrometer 5 is set so that only ions of one specific mass are detected, and the output of the amplifier 7 is inputted to the CRT 9 as a brightness signal.
The CRT 9 and the electron optical system 3 scan synchronously,
It is also possible to display the distribution pattern of a specific element on the sample surface.

(ヘ) 効果 本発明によればイオン銃として構造の簡単なも
の、要するにイオンビームを細く絞れない型のイ
オン銃を用いているので、装置価格が安価にな
り、しかも一次イオンビームが比較的太いにも
かゝわらず、一般的容易に得られる細い電子ビー
ムを利用することにより、絶縁性の試料の局所分
析が可能となつた。
(f) Effects According to the present invention, an ion gun with a simple structure, in other words, an ion gun that cannot narrow down the ion beam, is used, so the device cost is low, and the primary ion beam is relatively thick. Nevertheless, local analysis of insulating samples has become possible by using narrow electron beams, which are generally easily obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例装置の側面図、第2
図は本発明における一次イオンビームと電子ビー
ムとの試料面上における関係を示す側面図であ
る。 1……イオン銃、2……試料、3……電子光学
系、4……イオンエネルギー選別器、5……質量
分析器、6……イオン検出器。
FIG. 1 is a side view of an apparatus according to an embodiment of the present invention, and FIG.
The figure is a side view showing the relationship between the primary ion beam and the electron beam on the sample surface in the present invention. 1... Ion gun, 2... Sample, 3... Electron optical system, 4... Ion energy selector, 5... Mass spectrometer, 6... Ion detector.

Claims (1)

【特許請求の範囲】[Claims] 1 試料面を照射する一次イオンビームを発生す
るマクロビームイオン銃と、試料面の上記一次イ
オンビームによる照射域内の任意の微小領域を電
子ビームで照射する電子光学系と、試料面の上記
電子ビーム照射領域から放出される低エネルギー
の二次イオンを他の領域から放出される二次イオ
ンから区別するエネルギー選別手段と、同手段を
通過したイオンが入射せしめられる質量分析手段
とよりなる二次イオン質量分析計。
1. A macro beam ion gun that generates a primary ion beam that irradiates the sample surface, an electron optical system that irradiates an arbitrary micro region within the irradiation area of the sample surface with the primary ion beam, and an electron beam that irradiates the sample surface with the electron beam. A secondary ion system comprising an energy selection means for distinguishing low-energy secondary ions emitted from an irradiation region from secondary ions emitted from other regions, and a mass spectrometry means into which ions that have passed through the same means are incident. Mass spectrometer.
JP58076678A 1983-04-30 1983-04-30 Secondary ion mass spectrometer Granted JPS59201357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58076678A JPS59201357A (en) 1983-04-30 1983-04-30 Secondary ion mass spectrometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58076678A JPS59201357A (en) 1983-04-30 1983-04-30 Secondary ion mass spectrometer

Publications (2)

Publication Number Publication Date
JPS59201357A JPS59201357A (en) 1984-11-14
JPH0547933B2 true JPH0547933B2 (en) 1993-07-20

Family

ID=13612086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58076678A Granted JPS59201357A (en) 1983-04-30 1983-04-30 Secondary ion mass spectrometer

Country Status (1)

Country Link
JP (1) JPS59201357A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010001346B4 (en) * 2010-01-28 2014-05-08 Carl Zeiss Microscopy Gmbh Particle beam apparatus and method of operating a particle beam apparatus

Also Published As

Publication number Publication date
JPS59201357A (en) 1984-11-14

Similar Documents

Publication Publication Date Title
US3517191A (en) Scanning ion microscope with magnetic sector lens to purify the primary ion beam
US5008537A (en) Composite apparatus with secondary ion mass spectrometry instrument and scanning electron microscope
US3889115A (en) Ion microanalyzer
US3733483A (en) Electron spectroscopy
US4107527A (en) Ion-emission microanalyzer microscope
JPH0547933B2 (en)
JPH0378739B2 (en)
JPS5811569B2 (en) Dense Bunkousouchi
JP2538623B2 (en) Mass spectrometer
EP0190251B1 (en) Method and apparatus for the micro-analysis or imaging of samples
JPH01296555A (en) Focused ion beam device
US5107110A (en) Simultaneous detection type mass spectrometer
JPS6049546A (en) Complex analytical device
JP3055159B2 (en) Neutral particle mass spectrometer
JP3174307B2 (en) Secondary charged particle analyzer and sample analysis method using the same
JP3055160B2 (en) Neutral particle mass spectrometer
JPS62167452A (en) X-ray photoelectric spectrometer
JPS58200144A (en) X-ray photoelectron spectrometer
JPH0588502B2 (en)
JPH0341402Y2 (en)
JPS5830695B2 (en) charged particle analyzer
JPS6212464B2 (en)
JPS61165941A (en) Charged particle irradiation device
JPH03184251A (en) Sample surface analysis device
JPS5835345B2 (en) Microprobe secondary ion mass spectrometer