JPH0547981B2 - - Google Patents
Info
- Publication number
- JPH0547981B2 JPH0547981B2 JP56201227A JP20122781A JPH0547981B2 JP H0547981 B2 JPH0547981 B2 JP H0547981B2 JP 56201227 A JP56201227 A JP 56201227A JP 20122781 A JP20122781 A JP 20122781A JP H0547981 B2 JPH0547981 B2 JP H0547981B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate electrode
- amorphous silicon
- thin film
- passivation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6732—Bottom-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201227A JPS58102560A (ja) | 1981-12-14 | 1981-12-14 | 薄膜トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201227A JPS58102560A (ja) | 1981-12-14 | 1981-12-14 | 薄膜トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58102560A JPS58102560A (ja) | 1983-06-18 |
| JPH0547981B2 true JPH0547981B2 (sr) | 1993-07-20 |
Family
ID=16437436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56201227A Granted JPS58102560A (ja) | 1981-12-14 | 1981-12-14 | 薄膜トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102560A (sr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60261174A (ja) * | 1984-06-07 | 1985-12-24 | Nippon Soken Inc | マトリツクスアレ− |
| JPH0666277B2 (ja) * | 1987-09-24 | 1994-08-24 | 富士電機株式会社 | 非晶質シリコン薄膜の成長方法 |
| JPH01303716A (ja) * | 1988-05-31 | 1989-12-07 | Agency Of Ind Science & Technol | 薄膜形成方法 |
| EP0457596B1 (en) * | 1990-05-17 | 1995-12-06 | Sharp Kabushiki Kaisha | Process for fabricating a thin film transistor |
| JP3464285B2 (ja) * | 1994-08-26 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6337229B1 (en) * | 1994-12-16 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of making crystal silicon semiconductor and thin film transistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10276284A (ja) * | 1997-03-27 | 1998-10-13 | Ricoh Co Ltd | ファクシミリ装置 |
| JP2007311915A (ja) * | 2006-05-16 | 2007-11-29 | Ricoh Co Ltd | 画像読取システム、画像読取方法、およびその方法をコンピュータに実行させるプログラム |
-
1981
- 1981-12-14 JP JP56201227A patent/JPS58102560A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58102560A (ja) | 1983-06-18 |
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