JPH0548303B2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an ion plating device,
In particular, the present invention relates to an ion plating apparatus for forming a thin film on the surface of a base material having a complex shape. [Prior Art and Problems] For example, in structural materials made of various metals, ceramics, etc., various metal thin films are formed for the purpose of hardening the surface of the base material or imparting gloss. ing. When forming a film on such a base material, the following film thickness control method has conventionally been adopted. Film thickness sensor method: The material to be deposited in a crucible placed in a vacuum chamber is irradiated with an electron beam, etc. to evaporate it, the amount of evaporation is detected by a film thickness sensor, and the output of the electron beam is adjusted to deposit the material into the chamber. A uniform thin film is formed over the entire placed substrate. By rotating or revolving the base material holder placed above the crucible placed in the vacuum chamber, the difference in the amount of evaporation between the center and periphery of the base material is reduced and a uniform thin film is formed over the entire base material. Form. However, although the film thickness sensor method and the base material rotation method described above can control the overall average film thickness, it is not possible to control the film pressure at any location. For this reason, it becomes difficult to form a thin film with a uniform thickness on the surface of a complex-shaped base material. For this reason, the hollow cathode method, the reactive ion plating method, and the plasma gun method are known as methods for forming a thin film on the surface of a complex-shaped base material. However, each method has the following problems. In the hollow cathode method, since the negative voltage at the discharge part is high, holes are opened, and in U-shaped substrates, the substrate voltage is lowered to a predetermined 70°C due to the hollow cathode phenomenon.
%, so even if a film could be formed, the adhesion force would be very low. However, with such a method, it is not possible to make the film thickness uniform or even partially control the film thickness for the base material having the above shape. In the reactive ion plating method, since the ionization electrode (+) is located at the bottom, the substrate voltage is significantly lowered due to the hollow cathode phenomenon in the case of a hole being opened or a U-shaped substrate. Also, the film quality is not good. In the plasma gun method, since the vacuum chamber pressure can be lower than that of the plasma gun, it is possible to suppress the drop in the base material voltage due to the holocathode phenomenon.
Since plasma is formed in a certain horizontal direction within the chamber, shadows are created in holes and U-shaped parts formed in the base material, and plasma is not introduced deep inside the base material, and the holes etc. are shallow in shape. It is only possible to form a film. The present invention has been made in order to solve the above-mentioned conventional problems, and provides an ion plating device that can uniformly deposit a thin film on the surface of a substrate with holes or a complex shape such as a U-shape. This is what I am trying to do. [Means for solving the problem] The ion plating apparatus according to the present invention has the following features:
a vacuum chamber, a substrate holder disposed within the chamber, a deposition source disposed on gold near the bottom of the chamber, a plasma generation source for introducing plasma into the chamber, and the plasma air-core magnets provided on the outside of the chamber corresponding to the outer periphery of the plasma generation source and on the outside of the chamber facing the plasma generation source to focus the plasma drawn into the chamber; and an air-core magnet disposed within the chamber. a plurality of opposing electrodes each having a built-in magnet for focusing the plasma introduced into the chamber from the plasma generation source onto the surface of the base material held by the holder; and rotating and oscillating each of these opposing electrodes. and a drive mechanism having a pipe member in which a cooling water flow path for cooling the magnets of each of the opposing electrodes is formed. Furthermore, in the ion plating apparatus according to the present invention, the substrate holder has a rotatable structure, and the drive mechanism has a structure to rotate and swing the counter electrode in synchronization with the rotation of the holder. It is characterized by this. [Function] According to the present invention, a plurality of counter electrodes arranged concentrically with respect to the center of a vacuum chamber are rotated and swung by a drive mechanism, and a desired target is applied to a substrate held in a substrate holder. Plasma introduced into the chamber from a plasma generation source is directed to the surface of the base material by each of the opposed electrodes by generating a magnetic field from a magnet built into each of the opposed electrodes. The plasma can be focused at high density, and at the same time, the plasma can be irradiated onto the substrate surface from multiple directions. Therefore, the evaporation material evaporated from the evaporation source arranged in the chamber can be efficiently ionized by the plasma, and
The ionized vapor deposition material can be introduced into the deposition material from multiple directions. Furthermore, by forming a cooling water flow path inside the tube member of the drive mechanism, it is possible to cool the magnet inside the counter electrode that is exposed to high temperature plasma through the flow path, so that the magnetic force of the magnet can be maintained for a long period of time. It can be maintained stably over time. Therefore, the ionized vapor deposition material has a good ability to pass around the complicatedly shaped deposit material held in the holder, so that a thin film of uniform thickness can be efficiently and over a long period of time over the entire surface of the deposit material. Thus, an ion plating apparatus capable of stably forming a film can be obtained. Further, when a complex-shaped base material with holes, for example, is held in the holder by arranging magnets in the vacuum chamber so as to surround the base material held in the base material holder, Since the vapor deposition material ionized by the counter electrode and the plasma can be efficiently focused on the inner surface of the hole of the base material by the magnetic field of the magnet, a thin film with a uniform thickness can be formed not only on the surface of the base material but also on the inner surface of the hole. Can be formed into a film. Furthermore, the base material holder has a rotatable structure,
Further, by configuring the drive mechanism to rotate and oscillate the counter electrode in synchronization with the rotation of the holder, the density and shape of the plasma drawn from the plasma source in the chamber can be maintained by the holder. Since the control can be performed in response to the shape (external shape) of the base material, it is possible to efficiently form a thin film with a more uniform thickness over the entire surface of the complex-shaped base material. [Example] Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 3. FIG. 1 is a schematic cross-sectional view of an ion plating apparatus showing an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of FIG. 1, and FIG. FIG. Reference numeral 1 in the figure indicates a vacuum chamber, and an exhaust pipe 2 is provided on the lower side wall of the chamber 1 and communicates with a vacuum pump (not shown) for maintaining the chamber 1 at a predetermined degree of vacuum. Moreover, 3 in the figure is a vapor deposition source.
The vapor deposition source 3 includes a crucible 4 installed at the bottom of the chamber 1, an electron gun 5 installed on the lower side wall of the chamber 1 for irradiating the crucible 4 with an electron beam, and an electron gun 5 located above the crucible 4. It is comprised of a deflection coil 6 disposed nearby for deflecting the electron beam from the electron gun 5 and irradiating the vapor deposition material in the crucible 4 with the electron beam. Further, a plasma gun 7 as a plasma generation source is provided on the outer wall of the chamber 1,
The rear part of the plasma gun 7 is provided with an introduction pipe (not shown) for introducing a predetermined gas 8 such as nitrogen (N ₂ ). Note that a plasma constriction section 9 is provided on the side wall of the chamber 1 in which the plasma gun 7 is provided. Near the connection of the plasma gun 7 with the chamber 1 and on the outer wall portion of the chamber 1 facing the plasma gun 7, air-core magnets 10a and 10b are provided, respectively, for preventing diffusion of plasma drawn from the plasma gun 7. It is provided. and,
A plurality of (for example, five) drive mechanisms 11 are provided on the side wall of the chamber 1 to rotate and oscillate the counter electrode.
is provided so as to penetrate and be located on substantially the same plane as the plasma gun 7 and the installation location. The drive mechanism 11 includes an annular support plate 1 attached to the side wall 1a of the chamber 1, as shown in FIG.
It is equipped with 2. A cylindrical support member 13 is fixed to the surface of the support plate 12 on the outside of the chamber 1 with screws (not shown). A horizontal drive pipe 14 is pivotally supported by the support member 13 via an O-ring 15 and a flange 16 holding the same. A screw 17 is cut into the vicinity of the end of the drive tube 14 on the side opposite to the chamber side wall 1a, and a groove is provided in which a stop pin 18 inserted from the cylindrical support member 13 is fitted. 19 is formed. A moving handle 20 is attached to the screw 17 of the drive tube 14.
The threaded portion 21 of the handle 20 is screwed together, and the front surface of the handle 20 is in contact with the rear end surface of the cylindrical support member 13. That is, by rotating the handle 20, the drive tube 14, which is screwed together with the threaded portion 21 through the screw 17 and the stop pin 18 is inserted into the groove 19, is horizontally aligned along the cylindrical support member 13. It is now being moved in the direction of A rotary tube 22 is rotatably supported within the horizontal drive tube 14 via a bearing 23 . Incidentally, retaining rings 24 are provided on the outer peripheral surface of the rotary tube 22 at both ends of the drive tube 14 to drive the rotary tube 22 in the same direction as the drive tube 14 is driven in the horizontal direction. ing. The distal end side of the rotary tube 22 (inside the chamber 1) is bent, and a counter electrode 25 is fixed to the distal end. is built in. The rotating tube 22
A key groove 27 is formed on the outer peripheral surface of the rear end side, and a gear 28 that is engaged with the groove 22 is attached to the rotary tube 22. This gear 28
A pulse motor 29 and a gear 31 rotated by a shaft 30 are meshed with each other. The pulse motor 29 is adapted to be driven in synchronization with the rotation of the base material along the surface of the base material being held and rotated by a holder to be described later. A cylinder 33 is inserted into the center of the rotating tube 22 and serves as an outgoing path for cooling water supported by annular supports 32 provided at both ends of the rotating tube 22.
A cylindrical space 34 serving as a return path is formed between the outer peripheral surface and the inner surface of the rotary tube 22. The tip side of the cylinder 33 communicates with the inlet side of a permanent magnet cooling channel (not shown) formed in the counter electrode 25, and the cylindrical space 34 communicates with the outlet side of the cooling channel. communicated with the side. Further, rotation joints 35 and 36 are connected to the rear end surface of the rotary tube 22 and the outer circumferential surface near the rear end, respectively. A cooling water supply pipe 37 is connected to one joint 35, and a cooling water discharge pipe 38 is connected to the other joint 36. Further, a holder 39 for holding a base material is provided near the plasma generation region within the chamber 1, and the holder 39 is supported and suspended by a rotating shaft 40. A negative voltage connected to the variable power source 41 is applied to the holder 39 . Next, thin film formation using the ion plating apparatus of the present invention will be explained. A base material 42 made of SUS304 and having a complicated shape as shown in FIG. 4 was prepared. This base material 42 has a structure in which flat plate parts 44a and 44b are attached to the left and right sides of a central ring part 43, and the back surface of a U-shaped block part 45 is joined to the lower surface of one of the flat plate parts 44a. . Subsequently, the complex-shaped base material 42 is held in the holder 39 in the vacuum chamber 1, while a predetermined vapor deposition material 46 is accommodated in the crucible 4. The handle 20 of each drive mechanism 11 is rotated. As a result, the threaded portion 21 of the handle 20
The horizontal drive tube 14 is screwed together with the screw 17 through the screw 17, and the fixing pin 18 is inserted into the groove 19. The horizontal drive tube 14 moves forward (or retreats) along the cylindrical support member 13 in the horizontal direction. As the drive tube 14 moves forward, the inner rotary tube 22 engaged with the drive tube 14 via the retaining ring 24 also moves in the same direction, and the opposing electrode 25 at the tip of the rotary tube 22 moves in the chamber 1. Move to the specified position. After this, the cooling water supply pipe 37
Cooling water is supplied to the cooling channel (not shown) in the counter electrode 25 through the cylinder 33 which is the outgoing path to cool the built-in permanent magnet 26, and the cooled water is supplied to the cylindrical space 34 which is the outgoing path and It is discharged through the discharge pipe 38. A vacuum pump (not shown) is operated to exhaust the gas in the chamber 1 through the exhaust pipe 2 to achieve a predetermined degree of vacuum. Subsequently, the electron gun 5 emits an electron beam, and the deflection coil 6 irradiates the electron beam onto the vapor deposition material 46 housed in the crucible 4 to melt and evaporate it. As a plasma generating gas in the plasma gun 7
By supplying N ₂ 8, the plasma 47 is extracted into the chamber 1 through the constrictor 9, and is focused in a predetermined region within the chamber 1 by the magnetic fields of the air-core magnets 10a and 10b. At the same time, the holder 39 and the base material 42 held therein are rotated by the rotary shaft 40, and while a negative voltage is applied to the base material 42 from the variable power source 41, the pulse motor 29 of each control mechanism 11 is operated on the base material 42. Rotate in synchronization with the rotation of. As a result, the gear 31 of the shaft 30 mounted on the pulse motor 29 rotates, and the gear 28 meshed with this rotates the rotary tube 22, and the position of each counter electrode 25 fixed to the bent portion at the tip thereof is rotated. It rotates and oscillates in synchronization with the rotation of the base material 42 so that its direction follows the surface shape of the base material 42. By generating the plasma 47 in the chamber 1 and applying a negative voltage from the variable power source 41 to the base material 42, the positive ions in the plasma 47 are attracted to the base material 42 held by the holder 39 with a negative voltage. The ions are accelerated and collided with the base material 42. At this time, the plasma 47 is focused in accordance with the surface shape of the base material 42 by the magnetic field of the permanent magnet 26 in the counter electrode 25 which is rotated and oscillated by the drive mechanism 11 described above. In other words, the base material 4 shown in FIG.
2, for the flat plate portion 44b, the counter electrode 25 is directed upward to increase the plasma density, and for the U-shaped block portion 45, the surface of the counter electrode 25 is directed upward so that the plasma enters the inner surface of the U-shaped portion. It is made to face the block part 45. When the adhesive material evaporated by the crucible 3 described above reaches the plasma 47 region whose density is controlled in accordance with the shape of each member of the base material 42, it is ionized. The positively ionized vapor deposition material in the plasma 47 is uniformly and efficiently distributed over the entire base material 42 by the magnetic field from the permanent magnet 26 of each counter electrode 25 and the attractive force of the holder 39 to which a negative voltage is applied. Accelerate and collide. As a result, a thin film having a uniform thickness can be efficiently formed over the entire base material 42 including the flat plate portion 44b and the U-shaped block portion 45. In addition, in the ion plating apparatus having the above structure, by forming an outward path and a return path for cooling water in the rotary tube 22 of the drive mechanism 11 for rotating and oscillating the counter electrode 25, it is possible to prevent exposure to high temperature plasma. The permanent magnet 26 in the opposing electrode 25 can be cooled with an extremely simple structure, and a magnetic field for focusing plasma can be stably generated from the permanent magnet 26 over a long period of time. Next, another embodiment of the present invention will be described with reference to FIG. The ion plating apparatus shown in FIG. 5 has a structure in which cylindrical electromagnets 48 are arranged to surround a base material (for example, a cylindrical base material) 42' held by a base material holder 39'. According to this configuration, the plasma 47 drawn into the chamber 1 is transferred to the permanent magnet 26 in the counter electrode 25.
can be focused on the base material 42' side, and the base material 4
The cylindrical electromagnet 48 around the cylindrical base material 2' allows the material to be squeezed into a rod shape within the cylindrical base material 42'. As a result, the ionized vapor deposition material can be introduced not only to the outer circumferential surface of the cylindrical base material 42' but also to the inner circumferential surface, so that a thin film having a uniform thickness can be formed over the entire base material 42'. Furthermore, when forming a thin film on the inner surface of a curved cylinder using the ion plating apparatus shown in FIG. Can be formed. In addition, in the above embodiment, a permanent magnet was built into the opposing electrode, but an electromagnet may be used instead of the permanent magnet. [Effects of the Invention] As detailed above, according to the present invention, a thin film can be stably and uniformly formed over a long period of time on the surface of a substrate having holes or having a complex shape such as a U-shape. It is possible to provide an ion plating device that can perform

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of an ion plating apparatus showing an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of FIG. 1, and FIG. 4 are perspective views showing the base material used in this example, and FIG. 5 is a schematic sectional view of an ion plating apparatus showing another example of the present invention. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 3... Vapor deposition source, 4... Crucible, 7... Plasma gun, 11 ... Drive mechanism, 1
4...Horizontal drive tube, 20...Handle, 22
... Rotating tube, 25 ... Counter electrode, 26 ... Permanent magnet, 29 ... Pulse motor, 33 ... Cylinder (outward path of cooling water), 34 ... Cylindrical space (return path of cooling water),
37... Supply pipe, 38... Discharge pipe, 39, 39'
...Holder, 42, 42'...Base material, 44a, 4
4b... Flat plate part, 45... U-shaped block part, 4
6... Vapor deposition material, 47... Plasma, 48... Cylindrical electromagnet.

Claims (1)

[Scope of Claims] 1. A vacuum chamber, a substrate holder disposed within the chamber, a deposition source disposed near the bottom of the chamber, and a plasma for introducing plasma into the chamber. a generation source; an air-core magnet provided on the outside of the chamber corresponding to the outer periphery of the plasma generation source and on the outside of the chamber facing the plasma generation source for focusing the plasma drawn into the chamber; ,
a plurality of opposing electrodes arranged concentrically with respect to the center of the chamber and containing magnets for focusing plasma introduced into the chamber from the plasma generation source onto the surface of the base material held by the holder; , an ion plating system characterized by comprising a drive mechanism that rotates and oscillates each of these opposing electrodes and has a tube member in which a cooling water flow path for cooling the magnets of each of the opposing electrodes is formed. Device. 2. The ion plating apparatus according to claim 1, wherein a magnet is arranged in the vacuum chamber so as to surround the base material held by the base material holder. 3. The base material holder has a rotatable structure,
The ion plating apparatus according to claim 1 or 2, wherein the drive mechanism has a structure that swings and rotates the counter electrode in synchronization with rotation of the holder.