JPH0549638B2 - - Google Patents
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- JPH0549638B2 JPH0549638B2 JP63246834A JP24683488A JPH0549638B2 JP H0549638 B2 JPH0549638 B2 JP H0549638B2 JP 63246834 A JP63246834 A JP 63246834A JP 24683488 A JP24683488 A JP 24683488A JP H0549638 B2 JPH0549638 B2 JP H0549638B2
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- single crystal
- oxide
- garnet
- garnet single
- ggg
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Description
（産業上の利用分野）
本発明は酸化物ガーネツト単結晶およびその製
造方法、特には周波数100MHzから数10GHzのマ
イクロ波帯で使用されるマイクロ波素子、例えば
アイソレーター、サーキユレーター用の新規な磁
性膜や光アイソレーターのような磁気光学素子用
磁性膜として有用とされる酸化物ガーネツト単結
晶およびその製造方法に関するものである。
（従来の技術とその問題点）
従来、光アイソレーターやマイクロ波素子用の
磁性材料としてはフラツクス法で育成されたYIG
結晶が使われていたが、フラツクス法で作られた
これら素子は製造コストが高いという不利がある
ためこれについては半導体工業で開発されたウエ
ーハプロセス技術を応用した液相エピタキシヤル
法で育成したYIG結晶もしくは（BiY）3Fe5O12を
使用することが提案されている。
しかし。液相エピタキシヤル法では融液とエピ
タキシヤル成長膜とでガーネツト成分の割合が異
なる、いわゆる偏析減少があるため、さらにはガ
ーネツト成分が基板上にエピタキシヤル膜として
析出することによる過冷却温度の増大のために、
例えば20μｍ以上のYIG結晶膜もしくは
（BiY）3Fe5O12結晶膜を育成すると、基板表面に
最初に析出するエピタキシヤル膜と成長の最後で
のエピタキシヤル膜の組成が異なるという現象が
起きる。そして、この成長の最初と最後とでエピ
タキシヤル膜組成が異なるということはエピタキ
シヤル膜成長方向に歪を発生させ、極端な場合に
はエピタキシヤル膜に割れが発生するという不利
が生じる。したがつて、この方法では厚膜の酸化
物ガーネツト単結晶を得ることは難しく、またこ
のものは磁気共鳴半値巾ΔH値も不均一で高い値
を示すのでマイクロ波素子用には使用できないと
いう不利もある。
（発明の構成）
本発明はこのような不利を解決した高品質の光
アイソレーターやマイクロ波素子用材料として有
用とされる酸化物ガーネツト単結晶およびその製
造方法に関するもので、それは液相エピタキシヤ
ル法によつて融液中より基板上に酸化物ガーネツ
ト単結晶を育成する酸化物ガーネツト単結晶の製
造方法において、この育成温度を低下させながら
行うことを特徴とするものである。
すなわち、本発明者らは基板結晶とエピタキシ
ヤル成長層との格子定数のミスマツチがあつて
も、育成される膜にピツトを生じさせないマイク
ロ波素子材料の開発について種々検討した結果、
酸化物ガーネツト単結晶の融液にガドリニウム・
ガリウム・ガーネツト（GGG）、その一部をCa、
Zr、MgまたはＹで置換したGGG系、サマリウ
ム・ガリウム・ガーネツト（SGG）、ネオジウ
ム・ガリウム・ガーネツト（NGG）などからな
る基板を浸漬し、これを成長させることによつて
液相エピタキシヤル法で酸化物ガーネツト単結晶
を育成するに際して、この育成温度を均一とせず
に遂次低下させ、例えば一低速度で低下させると
ヒビ割れのない厚膜状の酸化物ガーネツト単結晶
を得ることができることを見出すと共に、このよ
うにして得られる酸化物ガーネツト単結晶はその
磁気共鳴半値巾ΔHが2.0Oe以下と低く、均一な
化学組成と格子定数を有するものになるというこ
とを確認して本発明を完成させた。
本発明の酸化物ガーネツト単結晶育成に使用さ
れるガーネツト基板単結晶は前記したGGG、
SGG、NGGまたはGGGにCa、Mg、ZrまたはＹ
を置換したGGG系のSOG、NOGまたはYOG（い
ずれも信越化学(株)製商品名）が例示される。な
お、これらの基板単結晶はいずれも公知のもので
あるが、これらはGd2O3、Sm2O3、Nd2O3または
必要に応じCaO、MgO、ZrOまたはY2O3などの
置換材をそれぞれGa2O3の所定量と共にルツボに
仕込み、高周波誘導でそれぞれの結晶の融点以上
に加熱して溶融したのち、この溶液からチヨクラ
ルスキー法で単結晶を引上げることによつて得る
ことができるが、このものはこの単結晶から切り
出したウエーハを例えば熱リン酸でエツチングし
たのち格子定数を測定すると12.367〜12.508Åを
示すことが確認された。
また、この基板単結晶上に液相法でエピタキシ
ヤル成長させる酸化物ガーネツト単結晶は上記し
たように組成式がYIG、（YM）aFe8-aO12または
（YM）a（FeN）8-aO12で示され、このＭがLa、
Bi、Gd、LuまたはＮがAl、Ga、In、Scの少な
くとも１種の元素から選択されるものでａが3.1
≧ａ≧3.0の範囲のものとされる。このYIG、
（YM）aFe8-aO12または式（YM）a（FeN）8-aO12
で示される単結晶は白金ルツボ中にY2O3、
Fe2O3、M2O3またはN2O3（Ｍ、Ｎは前記の通り）
をフラツクスとしてのPbO、B2O3と共に仕込み、
900〜1100℃に加熱してこれを融解させたのち、
この融液から液相エピタキシヤル法で単結晶を成
長させることによつて得ることができるが、本発
明の方法ではこの単結晶引上げ時における単結晶
の育成温度を低下させながら行なうことが必要で
あり、この育成温度を一定の速度、例えば0.02
℃／分で低下させながらこの単結晶を成長させる
と、この酸化物ガーネツト単結晶をヒビ割れのな
い、厚さが20μｍ以上で均一な格子定数と化学組
成を有する厚膜として得ることができるし、この
ものの磁気共鳴半値巾ΔHを2.0Oe以下の低い値
とすることができるという有利性が与えられる。
これは融液から酸化物ガーネツト単結晶を引上
げると融液中における酸化物ガーネツト成分が減
少してその飽和温度が低下するため、育成温度を
一定にしておくとその過冷却温度が設定値より低
下するために育成膜の組成が徐々に変化し、これ
によつてヒビが発生したり、割れが起り、さらに
は磁気共鳴半値巾ΔH値が増大するのであるが、
本発明の方法にしたがつてこの育成温度を好まし
くは一定速度で低下させながら育成すると融液の
過冷却温度の減少が育成温度の低下で補償される
ので育成膜の化学組成が常に一定のものとなり、
したがつて格子定数も一定となり、ヒビ、割れの
発生や磁気共鳴半値巾ΔHの増大が防止されるた
めである。
上記したような方法で得られる本発明の酸化物
ガーネツト単結晶は、容易に20μｍ以上の厚膜と
して得られるし、このものはその磁気共鳴半値巾
ΔHも2.0Oe以下のように低く、化学組成や格子
定数も一定で均一な値のものとなるので、光アイ
ソレーターやマイクロ波素子用材料としてすぐれ
た物性をもつものとなり、共振周波数の温度依存
性もなく、このものは例えば周波数100MHzから
数10GHzのマイクロ波帯で使用されるマイクロ波
素子として例えば、アイソレーター、サーキユレ
ーター用の磁性膜、また磁気化学素子用磁性膜と
しても有用とされる。
つぎに本発明の実施例をあげる。
実施例１〜４、比較例１〜２
基板としてGGG単結晶ウエーハを用い、YIG
エピタキシヤル膜を形成させる成分として所定量
のY2O3、Fe2O3をフラツクス成分としてのPbO、
B2O3と共に白金ルツボに仕込み、1100℃に加熱
してこれを溶融させ、この融液から育成温度を
0.02℃／分の降温速度で低下させながら液相エピ
タキシヤル法でGGG単結晶ウエーハの（111）方
向に式Y3Fe5O12で示されるYIGエピタキシヤル
膜を厚さ約88〜151μｍに成長させて酸化物ガー
ネツト単結晶を作つたところ、これにはヒビ、ク
ラツクなどの欠陥はみられず、また、このウエー
ハの共鳴磁界値を測定し、マイクロ波吸収スペク
トルの半値巾（ΔH）を求めたところ、これはい
ずれもΔH＝1.52Oeと良好な値を示した。
しかし、比較のために融液を温度を1100℃の一
定のものとし、育成温度を低下させないほかは上
記と同様に処理して酸化物ガーネツト単結晶の引
上げを行なつたところ、この場合には第１表に併
記したように膜にヒビが発生し、膜厚も83.1μｍ
止まりとなり、さらにΔHも2.60と大きくなつた。
(Industrial Application Field) The present invention relates to a garnet oxide single crystal and a method for producing the same, particularly a novel magnetic material for microwave devices used in the microwave band from 100 MHz to several tens of GHz, such as isolators and circulators. The present invention relates to an oxide garnet single crystal that is useful as a magnetic film for magneto-optical elements such as a film or an optical isolator, and a method for producing the same. (Conventional technology and its problems) Conventionally, YIG grown by the flux method has been used as a magnetic material for optical isolators and microwave devices.
However, since these devices made by the flux method have the disadvantage of high manufacturing costs, YIG, which is grown by the liquid phase epitaxial method applying wafer process technology developed in the semiconductor industry, was used. It has been proposed to use crystalline or (BiY) 3 Fe 5 O 12 . but. In the liquid phase epitaxial method, the ratio of the garnet component differs between the melt and the epitaxially grown film, which is called segregation reduction, and furthermore, the garnet component precipitates as an epitaxial film on the substrate, resulting in an increase in the supercooling temperature. for,
For example, when a YIG crystal film or (BiY) 3 Fe 5 O 12 crystal film of 20 μm or more is grown, a phenomenon occurs in which the composition of the epitaxial film initially deposited on the substrate surface is different from that of the epitaxial film at the end of growth. The fact that the composition of the epitaxial film differs between the beginning and the end of the growth causes strain in the growth direction of the epitaxial film, and in extreme cases, there is a disadvantage that cracks occur in the epitaxial film. Therefore, it is difficult to obtain a thick oxide garnet single crystal using this method, and the magnetic resonance half-width ΔH value is also non-uniform and high, so it cannot be used for microwave devices. There is also. (Structure of the Invention) The present invention relates to a garnet oxide single crystal that solves the above disadvantages and is useful as a material for high-quality optical isolators and microwave devices, and a method for manufacturing the same. The present invention is a method for producing an oxide garnet single crystal in which an oxide garnet single crystal is grown on a substrate from a melt using a method of the present invention, which is characterized in that the growth temperature is lowered. That is, the present inventors have conducted various studies on the development of microwave element materials that do not cause pits in the grown film even if there is a mismatch in lattice constant between the substrate crystal and the epitaxially grown layer.
Gadolinium is added to the melt of garnet oxide single crystal.
Gallium garnet (GGG), part of which is Ca,
A substrate made of GGG, samarium gallium garnet (SGG), neodymium gallium garnet (NGG), etc. substituted with Zr, Mg or Y is immersed and grown using the liquid phase epitaxial method. When growing an oxide garnet single crystal, it is possible to obtain a thick film-like oxide garnet single crystal without cracks by gradually lowering the growth temperature, for example, at a lower rate. In addition to this discovery, the present invention was completed by confirming that the garnet oxide single crystal obtained in this way has a low magnetic resonance half-width ΔH of 2.0 Oe or less, and has a uniform chemical composition and lattice constant. I let it happen. The garnet substrate single crystal used for growing the oxide garnet single crystal of the present invention is the above-mentioned GGG,
SGG, NGG or GGG with Ca, Mg, Zr or Y
Examples include GGG-based SOG, NOG, or YOG (all trade names manufactured by Shin-Etsu Chemical Co., Ltd.) in which . All of these substrate single crystals are known, but they are made of Gd 2 O 3 , Sm 2 O 3 , Nd 2 O 3 or substituted with CaO, MgO, ZrO or Y 2 O 3 as necessary. Each material is placed in a crucible together with a predetermined amount of Ga 2 O 3 , heated to a temperature above the melting point of each crystal using high-frequency induction, and then melted, and then a single crystal is pulled from this solution using the Czyochralski method. However, when a wafer cut from this single crystal was etched with hot phosphoric acid and the lattice constant was measured, it was confirmed that the lattice constant was 12.367 to 12.508 Å. Furthermore, the oxide garnet single crystal epitaxially grown on this substrate single crystal by the liquid phase method has the composition formula YIG, (YM) a Fe 8-a O 12 or (YM) a (FeN) 8 as described above. -a O 12 , this M is La,
Bi, Gd, Lu or N is selected from at least one element of Al, Ga, In, Sc, and a is 3.1
The range is ≧a≧3.0. This YIG,
(YM) a Fe 8-a O 12 or formula (YM) a (FeN) 8-a O 12
The single crystal shown is Y 2 O 3 in a platinum crucible,
Fe 2 O 3 , M 2 O 3 or N 2 O 3 (M and N are as above)
is charged with PbO and B 2 O 3 as a flux,
After heating it to 900-1100℃ to melt it,
It can be obtained by growing a single crystal from this melt using a liquid phase epitaxial method, but in the method of the present invention, it is necessary to lower the single crystal growth temperature when pulling this single crystal. There is a constant rate of this growth temperature, e.g. 0.02
By growing this single crystal while decreasing the temperature at °C/min, it is possible to obtain a crack-free, thick film of garnet oxide with a thickness of 20 μm or more and a uniform lattice constant and chemical composition. This has the advantage that the magnetic resonance half-width ΔH can be set to a low value of 2.0 Oe or less. This is because when an oxide garnet single crystal is pulled from the melt, the oxide garnet component in the melt decreases and its saturation temperature drops, so if the growth temperature is kept constant, the supercooling temperature will be lower than the set value. As a result, the composition of the grown film gradually changes, causing cracks and fractures, and furthermore, the magnetic resonance half-width ΔH value increases.
If the growth temperature is lowered preferably at a constant rate according to the method of the present invention, the reduction in the supercooling temperature of the melt is compensated for by the reduction in the growth temperature, so that the chemical composition of the grown film is always constant. Then,
Therefore, the lattice constant is also kept constant, and the occurrence of cracks and cracks and an increase in the magnetic resonance half-width ΔH are prevented. The garnet oxide single crystal of the present invention obtained by the method described above can be easily obtained as a thick film of 20 μm or more, has a low magnetic resonance half-width ΔH of 2.0 Oe or less, and has a chemical composition. Since the lattice constant and lattice constant are constant and uniform, it has excellent physical properties as a material for optical isolators and microwave devices, and there is no temperature dependence of the resonant frequency, making it suitable for frequencies ranging from, for example, 100 MHz to several tens of GHz. It is said to be useful as a magnetic film for isolators and circulators, and also as a magnetic film for magnetochemical elements as microwave elements used in the microwave band. Next, examples of the present invention will be given. Examples 1 to 4, Comparative Examples 1 to 2 Using GGG single crystal wafer as the substrate, YIG
A predetermined amount of Y 2 O 3 as a component to form an epitaxial film, Fe 2 O 3 as a flux component, PbO as a flux component,
B 2 O 3 is charged into a platinum crucible, heated to 1100℃ to melt it, and the growth temperature is determined from this melt.
A YIG epitaxial film having the formula Y 3 Fe 5 O 12 is grown to a thickness of approximately 88 to 151 μm in the (111) direction of a GGG single crystal wafer using a liquid phase epitaxial method while decreasing the temperature at a cooling rate of 0.02°C/min. When we produced a single crystal of garnet oxide, we found that there were no defects such as cracks or cracks, and we also measured the resonance magnetic field value of this wafer and determined the half-width (ΔH) of the microwave absorption spectrum. As a result, both showed a good value of ΔH=1.52 Oe. However, for comparison, the temperature of the melt was kept constant at 1100°C, and garnet oxide single crystals were pulled in the same manner as above except that the growth temperature was not lowered. As shown in Table 1, cracks occurred in the film, and the film thickness was 83.1 μm.
It stopped, and ΔH also increased to 2.60.
【表】
実施例 ５
実施例１におけるYIGの代わりに（Y2.2Bi0.8
Fe5O12で示されるエピタキシヤル膜を形成させ
る成分として、さらに所定量のBi2O3白金ルツボ
に仕込んだほかは実施例１と同様に処理して16枚
の単結晶エピタキシヤル膜を育成したところ、得
られた単結晶膜はすべて全くヒビのないもので、
これらはいずれも膜厚が116.0μｍで膜厚のバラツ
キも1.5μｍ以下であり、格子定数も12.438±0.003
Åの範囲内の値で、そのΔHもはいずれも1.5Oe
と小さい値を示した。
実施例 ６
実施例１におけるYIGの代わりにY2.9Bi0.1Fe4.1
Ga0.9O12で示されるエピタキシヤル膜を形成させ
る成分としてさらに所定量のBi2O3、Ga2O3を白
金ルツボに仕込んだほかは実施例１と同様に処理
して10枚の単結晶エピタキシヤル膜を育成したと
ころ、得られた膜はすべて全くヒビのないもので
これらはいずれも膜厚が110.0μｍでバラツキも
1.5μｍ以下であり、このΔHも1.52Oeと小さい値
を示した。
参考例
実施例２、５および６で作成したエピタキシヤ
ル膜の表面層、表面層から約30μｍ下の層、また
表面層から約70μｍ下の層について、ICP分析装
置を用いて膜の成分を分析したところ、第２表に
示したとおりの結果が得られた。
なお、この場合の試料の作成はエピタキシヤル
膜を約180℃の過リン酸に入れて所定の厚さまで
エツチングしたが、ICP分析の前処理はこの試料
をオートクレーブ中に入れ濃塩酸で溶解して行な
つた。[Table] Example 5 Instead of YIG in Example 1 (Y 2.2 Bi 0.8
Sixteen single crystal epitaxial films were grown in the same manner as in Example 1, except that a predetermined amount of Bi 2 O 3 was added to the platinum crucible as a component for forming an epitaxial film represented by Fe 5 O 12 . As a result, all of the single crystal films obtained were completely crack-free.
All of these have a film thickness of 116.0 μm, a variation in film thickness of 1.5 μm or less, and a lattice constant of 12.438 ± 0.003.
The value is within the range of Å, and the ΔH is also 1.5Oe.
showed a small value. Example 6 Y 2.9 Bi 0.1 Fe 4.1 instead of YIG in Example 1
Ten single crystals were prepared in the same manner as in Example 1, except that predetermined amounts of Bi 2 O 3 and Ga 2 O 3 were added to the platinum crucible as components for forming an epitaxial film represented by Ga 0.9 O 12 . When epitaxial films were grown, all of the films obtained had no cracks at all, and the film thickness was 110.0 μm with no variation.
It was 1.5 μm or less, and this ΔH also showed a small value of 1.52 Oe. Reference Example The surface layer of the epitaxial films prepared in Examples 2, 5, and 6, the layer approximately 30 μm below the surface layer, and the layer approximately 70 μm below the surface layer were analyzed for film components using an ICP analyzer. As a result, the results shown in Table 2 were obtained. In this case, the sample was prepared by placing the epitaxial film in superphosphoric acid at about 180°C and etching it to a specified thickness, but for pretreatment for ICP analysis, the sample was placed in an autoclave and dissolved in concentrated hydrochloric acid. I did it.
第１図は融液から酸化物ガーネツト単結晶を液
相エピタキシヤル法で引上げるとき、この育成温
度を一定速度で降温したとき、またこれを一定と
したときのヒビ発生の有無を示したグラフを示し
たものである。
Figure 1 is a graph showing the presence or absence of cracks when a garnet oxide single crystal is pulled from a melt by the liquid phase epitaxial method, when the growth temperature is lowered at a constant rate, and when this is held constant. This is what is shown.
Claims (1)
板上に酸化物ガーネツト単結晶を育成する酸化物
ガーネツト単結晶の製造方法において、該酸化物
ガーネツト単結晶の化学組成を均一に保つように
この育成温度を0.02℃／分以下の一定速度で低下
させながら育成を行なうことを特徴とする酸化物
ガーネツト単結晶の製造方法。 ２ 基板がガドリニウム・ガリウム・ガーネツト
（GGG）、その一部をCa、Zr、MgまたはＹで置
換したGGG系、サマリウム・ガリウム・ガーネ
ツト（SGG）またはネオジム・ガリウム・ガー
ネツト（NGG）であり、酸化物ガーネツト単結
晶がYIGである請求項１に記載の酸化物ガーネツ
ト単結晶の製造方法。 ３ 基板がガドリニウム・ガリウム・ガーネツト
（GGG）、その一部をCa、Zr、MgまたはＹで置
換したGGG系、サマリウム・ガリウム・ガーネ
ツト（SGG）またはネオジム・ガリウム・ガー
ネツト（NGG）であり、酸化物ガーネツト単結
晶が式（YM）aFe8-aO12または（YM）a（FeN）8-
ａO12（ここにＭはLa、Bi、Gd、Luから、またＮ
はAl、Ga、In、Scから選択される少なくとも一
つの元素、ａは3.1≧ａ≧3.0）で示されるもので
ある請求項１に記載の酸化物ガーネツト単結晶の
製造方法。 ４ 結晶成長速度を一定速度に制御して融液の過
冷却温度低下を補償するようにしてなる請求項１
に記載の酸化物ガーネツト単結晶の製造方法。 ５ 厚膜が20〜150μｍで均一な格子定数と化学
組成を有しており、磁気共鳴半値幅（ΔH）が
2.0Oe以下であることを特徴とする液相エピタキ
シヤル法で基板上に育成された酸化物ガーネツト
単結晶。 ６ 酸化物ガーネツト単結晶がYIGである請請求
項５に記載の酸化物ガーネツト単結晶。 ７ 酸化物ガーネツト単結晶が式（YM）aFe8-a
O12（Ｍ、ａは前記に同じ）で示されるものであ
る請求項５に記載の酸化物ガーネツト単結晶。 ８ 酸化物ガーネツト単結晶が式（YM）a
（FeN）8-aO12（Ｍ、Ｎ、ａは前記に同じ）で示さ
れるものである請求項５に記載の酸化物ガーネツ
ト単結晶。[Claims] 1. A method for producing an oxide garnet single crystal in which the oxide garnet single crystal is grown on a substrate from a melt by a liquid phase epitaxial method, in which the chemical composition of the oxide garnet single crystal is A method for producing an oxide garnet single crystal, characterized in that the growth is performed while decreasing the growth temperature at a constant rate of 0.02° C./min or less to maintain uniformity. 2 The substrate is gadolinium gallium garnet (GGG), a GGG series partially substituted with Ca, Zr, Mg, or Y, samarium gallium garnet (SGG), or neodymium gallium garnet (NGG), and is oxidized. 2. The method for producing an oxide garnet single crystal according to claim 1, wherein the oxide garnet single crystal is YIG. 3 The substrate is gadolinium gallium garnet (GGG), a GGG series partially substituted with Ca, Zr, Mg, or Y, samarium gallium garnet (SGG), or neodymium gallium garnet (NGG), and is oxidized. A monocrystalline garnet single crystal has the formula (YM) a Fe 8-a O 12 or (YM) a (FeN) 8-
a O 12 (here M is from La, Bi, Gd, Lu, and N
2. The method for producing a garnet oxide single crystal according to claim 1, wherein a is at least one element selected from Al, Ga, In, and Sc, and a is represented by 3.1≧a≧3.0. 4. Claim 1, wherein the crystal growth rate is controlled to a constant rate to compensate for the decrease in supercooling temperature of the melt.
A method for producing an oxide garnet single crystal as described in . 5 The thick film is 20 to 150 μm, has a uniform lattice constant and chemical composition, and has a magnetic resonance half-width (ΔH) of
A garnet oxide single crystal grown on a substrate by a liquid phase epitaxial method characterized by a crystallinity of 2.0 Oe or less. 6. The oxide garnet single crystal according to claim 5, wherein the oxide garnet single crystal is YIG. 7 Oxide garnet single crystal has the formula (YM) a Fe 8-a
The oxide garnet single crystal according to claim 5, which is represented by O 12 (M and a are the same as above). 8 The oxide garnet single crystal has the formula (YM) a
The oxide garnet single crystal according to claim 5, which is represented by (FeN) 8-a O 12 (M, N, and a are the same as above).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24683488A JPH0297494A (en) | 1988-09-30 | 1988-09-30 | Oxide garnet single crystal and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24683488A JPH0297494A (en) | 1988-09-30 | 1988-09-30 | Oxide garnet single crystal and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0297494A JPH0297494A (en) | 1990-04-10 |
| JPH0549638B2 true JPH0549638B2 (en) | 1993-07-26 |
Family
ID=17154387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24683488A Granted JPH0297494A (en) | 1988-09-30 | 1988-09-30 | Oxide garnet single crystal and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0297494A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0559412B1 (en) * | 1992-03-02 | 1997-01-22 | TDK Corporation | Process for producing thin film by epitaxial growth |
| CN108585850B (en) * | 2018-06-15 | 2020-11-13 | 济南大学 | Ultra-low temperature sintered microwave dielectric ceramic and preparation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62143893A (en) * | 1985-12-16 | 1987-06-27 | Matsushita Electric Ind Co Ltd | How to grow magneto-optic crystals |
-
1988
- 1988-09-30 JP JP24683488A patent/JPH0297494A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0297494A (en) | 1990-04-10 |
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