Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0550443B2 - - Google Patents
[go: Go Back, main page]

JPH0550443B2 - - Google Patents

Info

Publication number
JPH0550443B2
JPH0550443B2 JP1138076A JP13807689A JPH0550443B2 JP H0550443 B2 JPH0550443 B2 JP H0550443B2 JP 1138076 A JP1138076 A JP 1138076A JP 13807689 A JP13807689 A JP 13807689A JP H0550443 B2 JPH0550443 B2 JP H0550443B2
Authority
JP
Japan
Prior art keywords
carbon nitride
reaction
aln
powder
salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1138076A
Other languages
Japanese (ja)
Other versions
JPH036224A (en
Inventor
Masayuki Kawaguchi
Koji Nozaki
Yasushi Kida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority to JP1138076A priority Critical patent/JPH036224A/en
Priority to GB9010363A priority patent/GB2232991B/en
Priority to US07/524,040 priority patent/US5225280A/en
Priority to DE4016638A priority patent/DE4016638A1/en
Priority to FR9006480A priority patent/FR2649985B1/en
Publication of JPH036224A publication Critical patent/JPH036224A/en
Priority to GB9310763A priority patent/GB2266092B/en
Publication of JPH0550443B2 publication Critical patent/JPH0550443B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

[産業上の利用分野] 本発明は、新規な化学組成を有し、AlNの前
駆体となる窒化炭素のAl塩化合物、ならびに高
熱伝導性IC用基板等のセラミツクスとして有用
なAlNの耐酸化性原料用粉末とその製造法に関
する。 [従来の技術とその解決しようとする課題] 従来、トリアジン環を有するポリマーとして、
ビニル−s−トリアジン類の重合体[高分子38,
196(1989)]あるいはメラミン樹脂などが知られ
ているが、前者は一次元(線状)のポリマーであ
り、後者は三次元的に無秩序に結合するためアモ
ルフアスである。s−トリアジン環は6π電子系
であり、6原紙(炭素3個、窒素3個)は同一平
面を形成するため二次元的にπ電子系を拡張でき
れば、光学的、電気的に非常に有用な材料となり
得ることが期待されるが、今まで二次元平面を形
成するトリアジン環状ポリマーは合成されていな
かつた。 そこで、本発明者らは種々の条件で検討を重ね
た結果、塩化シアヌルやメラミンのような炭素と
窒素のトリアジン環を含む化合物を反応原料とす
ることにより合成される窒化炭素とその製造方法
を見い出し、すでに出願している[「窒化炭素お
よびその製造方法」(特願昭63−173186号)]。 またその後、上記窒化炭素とアルカリ金属の化
合物についても出願し(特願平1−27240号)、窒
化炭素の構造として下記化学構造を提案した。 この平面内には、3個の>NHで囲まれた
0.394nmの空孔が存在し、アルカリ金属はその中
に導入される。 一方、AlNセラミツクスは高熱伝導性を有す
るためIC用の基板等として種々の用途に使用さ
れているが、その原料用粉末に酸素が含有されて
いると熱伝導度の低下を招くため好ましくない
が、酸素は製造過程において粉末中に残留するだ
けでなく、セラミツクス焼結体製造時までに空気
中で保存すると一部が酸化されるという問題があ
る。 そこで、粉末の酸化防止のために界面活性剤で
表面処理する方法(特開昭64−61304)等が提案
されているが、溶剤等を用いたり、処理工程が増
加する等、経済的に不利になる。 [問題を解決するための手段] 本発明者らはこのようなことから、窒化炭素中
の窒素を利用するべくAl塩化合物との反応を検
討した結果、低温での反応物はAl塩を空孔内に
取り込んだ新規な化学構造を有し、これを更に高
温処理するか、上記原料を直接高温で反応させる
ことにより耐酸化性を有する有機質の膜で被覆さ
れたAlN粉末が生成することを見出し、本発明
に到達したものである。 すなわち本発明は、一般式がC6N〓H〓Al〓X〓(た
だし、8≦α≦10,0≦β≦10,0.6≦γ≦1.5,
0≦δ≦1,Xは酸基を示す。)で表わされる層
状構造を有する窒化炭素のAl塩化合物、および
一般式[(C3N32NxHy](ただし、2≦x≦4,
0≦y≦8)で表わされる窒化炭素をAl塩と200
〜500℃の温度範囲で反応させることを特徴とす
る上記窒化炭素のAl塩化合物の製造法、ならび
に一般式がC6N〓H〓Al〓X〓(ただし、8≦α≦10,
0≦β≦10,0.6≦γ≦1.5,0≦δ≦1,Xは酸
基を示す。)で表わされる窒化炭素のAl塩化合物
を更に800〜950℃で熱処理させることにより得ら
れるあるいは一般式が[(C3N32NxHy](ただ
し、2≦x≦4,0≦y≦8)で表わされる窒化
炭素をAl塩と800〜950℃で反応させることによ
り得られる、アモルフアスの炭素、窒素、水素か
らなる組成物[ただし、そのモル比がC:N:H
=(0〜1.5):(0〜1.5):(0〜1.0)の皮膜によ
り被覆されたAlN粉末を提供するものである。 原料となる窒化炭素は先に出願した特願昭63−
173186号で詳述しているが、塩化シアヌルとアン
モニアまたは塩化シアヌルとメラミンを反応させ
た後、400〜600℃で熱分解することにより得られ
る。該化合物は、一般式[(C3N32NxHy](ただ
し、2≦x≦4,0≦y≦8)で示される層状ポ
リマーで、塩化シアヌル−アンモニア系、メラミ
ンのみ、メラミン−塩化シアヌル系より合成され
たものが本発明の原料として好ましい。なお、窒
化炭素に関し、先の出願の場合と一般式の表現方
法は異なるが、化合物中の構成原子の比率は全く
同じであり、全く同じ化合物を示している。 本発明の化合物は、上記窒化炭素とAl塩を反
応させることにより得られ、Xで示される種々の
酸基よりなるAl塩として、AlCl3,AlBr3,AlI3
Al2(SO43等が使用できるが、これらは水和物の
形でも用いることができる。 反応は原料の窒化炭素とAl塩の粉末を混合し
た後、窒素等の不活性ガス中で加熱反応させるこ
とにより得られるが、その反応温度によつて生成
物が異なる。まず反応温度を、200〜500℃の範囲
に設定すると、一般式C6N〓H〓Al〓X〓で表わされ
る層状構造を有する窒化炭素のAl塩化合物(以
後AlN前駆体と記す。)が生成し、一方800〜950
℃の範囲に設定することにより、アモルフアスの
炭素、窒素、水素の組成物により被覆された
AlN粉末を得ることができる。 また、一旦生成したAlN前駆体を同様に800〜
950℃の温度で処理すると、上記有機被覆で被覆
されたAlN粉末を同様に得ることができる。 200℃より低い温度では反応が進行せず、500℃
より高い温度の場合、800℃付近に達するまでは
元の窒化炭素の構造は破壊されるが結晶性AlN
が生成するには至つていず、950℃より高い温度
では被覆しているアモルフアス状炭素、窒素、水
素の組成物が分解、飛散し、普通の粉末状AlN
に変わる。 Al化合物の使用量は、原料の窒化炭素210gに
対して、0.8〜2.0mol好ましくは0.9〜1.5molの割
合で使用、反応させる。0.8molより少ない場合、
未反応の窒化炭素が残留するため好ましくなく、
一方2.0molより多すぎると逆に未反応のAl塩が
多量にその除去が困難になる。これは200〜500℃
の反応および800〜950℃の反応の両方について同
様である。 本発明において、200〜500℃の温度で反応させ
た際の生成物は黄色の粉末で、X線回折スペクト
ルおよびIRスペクトルより、原料の窒化炭素の
構造は殆ど保たれたまま、>NHで囲まれた
0.394nmの空孔内にAl金属を取り込んだものであ
り、取り込まれる際に>NHの水素とAl塩が反応
して一部が酸として失われるが、残つたAl塩の
酸基の一部もそのまま空孔に取り込まれる。 そのためこの化合物は、C6N〓H〓Al〓X〓の形で
示すことができる。上記化合物は安定で、空気中
に曝しても、殆ど吸湿、分解等は起こらない。 一方、反応温度が800〜950℃の場合に生成した
化合物は、白色から灰色がかつた粉末で、X線回
折の結果AlN粉末であることがわかつた。 しかし、これらの化合物のIRスペクトルや元
素分析より他の有機物の存在が確かめられ、この
有機物はX線回折図には全然現れないためアモル
フアスで、確認されたAlNの組成を差し引いて
考えると、その組成はモル比がC:N:H=(0
〜1.5):(0〜1.5):(0〜1.0)の化合物となる。
AlN粉末は、これらの皮膜により被覆されてい
るため容易に酸化されにくく、またこれらの有機
皮膜は1000℃以上に加熱すると昇華、分解する
が、この皮膜はいずれも還元性の物質により構成
されているので、昇華、分解の際に表面に酸素を
残さない。従つて、上記粉末を成形する直前、成
形した後で焼結前に1000℃以上で熱処理を行うこ
とにより、焼結体中に酸素を含有しない熱伝導性
の高いAlNセラミツクスを得ることができる。 本発明で得られたAlN粉末は、窒化炭素の原
料となるメラミン等とAl塩の反応によつて得る
ことはできず、一旦前駆体を通過することによつ
て初めて生成することがわかつた。従つて、有機
物によつて被覆された酸素を含有しないセラミツ
クスを製造するのに有利な本発明のAlN粉末は、
本発明の方法によつてのみ、初めて可能になる。 [実施例] 以下、本発明を実施例により詳細に説明する。 実施例 1 石英反応管内に、窒化炭素1.0gとAlCl30.66g
の混合物を反応皿に入れて設置し、窒素気流中で
500℃に昇温し3時間反応させた。 室温から徐々に昇温していくと、約120℃から
反応が始まつてHClを放出していることが、生成
ガスのIRスペクトルからわかつた。温度が約300
℃に達すると反応は激しく進行し、500℃に達し
た後3時間でほぼHClの放出は止まつた。 生成物1.22gは元の窒化炭素よりさらに黄色く
変色していたが、空気中では殆ど吸湿、分解等を
おこさず安定に存在していた。 この生成物の元素分析値、およびその組成を第
1表に示す。次に、生成物のX線回折図を第1図
に示すと、原料の窒化炭素に比べ結晶性は低下し
ているが、002面の回折線の位置は余り変化せず、
層間距離は余り変化していない。 第3図は、本実施例の生成物のIRスペクトル
であるが、この図は原料の窒化炭素と殆ど同じ
で、生成物は原料の骨格をそのまま残しているこ
とがわかる。ただ、CN伸縮を示す2186cm-1の吸
収やCH伸縮を示す2980cm-1の吸収がそれぞれ観
察され、発熱反応の際に一部分解等が起こり、構
造が乱れていると考えられる。 以上のデータより、反応のメカニズムおよび構
造は以下のように考えられる。 前述したように、窒化炭素には>NHで囲まれ
た0.394nmの空孔が単位格子に一つ存在するが、
この>NHは反応性が高くAlCl3と脱塩酸反応を
起こしてAlおよび未反応のClを空孔内に取り込
むと考えられる。そのため、元の構造は殆ど保持
され、層間隔は殆ど変わらないが、若干構造が乱
れている。このように、この反応においては窒化
炭素の単位格子一つに対し、AlCl3分子が反応す
ると考えられるが、実際そのモル比で反応させた
場合、生成物の収率が良く、本実施例においても
理想的な窒化炭素の化学式[(C3N32(NH)3
に対して、Alが0.9とほぼ1に近い値となつてい
る。 実施例 2 反応温度を900℃に設定した以外は、実施例1
と同様の条件で反応を行つた。 500℃までは実施例1と同様の経過で反応し、
600℃付近で電気炉の低温部に白色粉末が生成し、
さらに800℃付近で黒色粉末が生成した。 反応終了後やや灰色味を帯びた白色粉末が0.30
g残つた。生成物は空気中で安定であつた。 生成物の元素分析結果、およびこれより計算し
た化合物のモル比組成を第1表に表わす。この結
果より反応に供したAlは殆ど失われておらず、
途中での生成物は窒素、炭素、水素からなる有機
物であることがわかつた。 最終生成物のX線回折図を第2図に示すが、こ
の回折パターンはAlNと一致し、AlN粉末であ
ることがわかつた。しかし、元素分析の結果は、
まだ相当量の炭素と過剰の窒素および少量の水素
が含まれており、生成物はこれらの混合物と考え
られるが、X線回折図にはそのピークがないこと
から、これらはアモルフアスと考えられる。 次に、生成物のIRスペクトルを第4図に示す
が、このスペクトルも元の窒化炭素と全く異な
る。 AlNはIRにおいても殆ど吸収ピークを示さず、
これらのスペクトルを調べたところ、C,N,H
に関係するピークであることがわかつた。このこ
とから、900℃での生成物は、C,N,Hよりな
るアモルフアスの有機物により表面を被覆されて
いると考えられる。この生成物の1000℃処理後の
元素分析値を同じく第1表に示すが、このような
処理により表面の有機物は昇華、分解しAlNの
みが残つた。
[Industrial Application Field] The present invention relates to an Al salt compound of carbon nitride, which has a novel chemical composition and is a precursor of AlN, and the oxidation resistance of AlN, which is useful as a ceramic for highly thermally conductive IC substrates, etc. Concerning raw material powder and its manufacturing method. [Conventional technology and problems to be solved] Conventionally, as a polymer having a triazine ring,
Polymers of vinyl-s-triazines [Polymer 38,
196 (1989)] and melamine resin, but the former is a one-dimensional (linear) polymer, and the latter is amorphous because it bonds in a three-dimensional disorder. The s-triazine ring is a 6π electron system, and 6 base papers (3 carbon atoms, 3 nitrogen atoms) form the same plane, so if the π electron system can be extended two-dimensionally, it will be very useful optically and electrically. Although it is expected that it can be used as a material, no triazine cyclic polymer that forms a two-dimensional plane has been synthesized until now. Therefore, as a result of repeated studies under various conditions, the present inventors have developed carbon nitride, which is synthesized by using a compound containing a triazine ring of carbon and nitrogen, such as cyanuric chloride or melamine, as a reaction raw material, and a method for producing the same. An application has already been filed under the heading "Carbon nitride and its manufacturing method" (Japanese Patent Application No. 173186-1986). Subsequently, an application was also filed for the above-mentioned compound of carbon nitride and an alkali metal (Japanese Patent Application No. 1-27240), and the following chemical structure was proposed as the structure of carbon nitride. In this plane, there are three >NH surrounded by
A 0.394 nm vacancy exists, into which the alkali metal is introduced. On the other hand, AlN ceramics have high thermal conductivity and are used for various purposes such as IC substrates, but if the raw material powder contains oxygen, it is undesirable because it causes a decrease in thermal conductivity. There is a problem that not only oxygen remains in the powder during the manufacturing process, but also that a portion of the ceramic sintered body is oxidized when stored in air before manufacturing. Therefore, methods such as surface treatment with surfactants have been proposed to prevent powder oxidation (Japanese Patent Laid-Open No. 64-61304), but these methods are economically disadvantageous as they require the use of solvents, increase the number of processing steps, etc. become. [Means for solving the problem] Based on the above, the present inventors investigated a reaction with an Al salt compound to utilize nitrogen in carbon nitride, and found that the reactant at low temperature vacates the Al salt. It has a new chemical structure incorporated into the pores, and it is possible to generate AlN powder coated with an oxidation-resistant organic film by further high-temperature treatment or by directly reacting the above raw materials at high temperatures. This is the heading that led to the present invention. That is, in the present invention, the general formula is C 6 N〓H〓Al〓X〓 (8≦α≦10, 0≦β≦10, 0.6≦γ≦1.5,
0≦δ≦1, X represents an acid group. ), and the general formula [(C 3 N 3 ) 2 N x H y ] (where 2≦x≦4,
Carbon nitride represented by 0≦y≦8) is mixed with Al salt at 200
The above-mentioned method for producing an Al salt compound of carbon nitride is characterized in that the reaction is carried out in a temperature range of ~500°C, and the general formula is C 6 N〓H〓Al〓X〓 (where 8≦α≦10,
0≦β≦10, 0.6≦γ≦1.5, 0≦δ≦1, X represents an acid group. ) is obtained by further heat-treating the Al salt compound of carbon nitride at 800 to 950 ° C . A composition consisting of amorphous carbon, nitrogen, and hydrogen obtained by reacting carbon nitride represented by ≦y≦8) with an Al salt at 800 to 950°C [provided that the molar ratio is C:N:H
=(0-1.5):(0-1.5):(0-1.0) Provides an AlN powder coated with a film of (0-1.0). Carbon nitride, which is a raw material, is obtained from a patent application previously filed in 1983.
As detailed in No. 173186, it is obtained by reacting cyanuric chloride with ammonia or cyanuric chloride with melamine, and then thermally decomposing it at 400 to 600°C. The compound is a layered polymer represented by the general formula [(C 3 N 3 ) 2 N x H y ] (where 2≦x≦4, 0≦y≦8), and contains only cyanuric chloride-ammonia, melamine, Those synthesized from a melamine-cyanuric chloride system are preferred as raw materials for the present invention. Regarding carbon nitride, although the method of expressing the general formula is different from that in the previous application, the ratio of the constituent atoms in the compound is exactly the same, indicating exactly the same compound. The compound of the present invention is obtained by reacting the above carbon nitride with an Al salt, and as an Al salt consisting of various acid groups represented by X, AlCl 3 , AlBr 3 , AlI 3 ,
Al 2 (SO 4 ) 3 etc. can be used, but these can also be used in the form of hydrates. The reaction is achieved by mixing the raw materials carbon nitride and Al salt powder and then heating the mixture in an inert gas such as nitrogen, but the products differ depending on the reaction temperature. First, when the reaction temperature is set in the range of 200 to 500°C, an Al salt compound of carbon nitride (hereinafter referred to as AlN precursor) having a layered structure represented by the general formula C 6 N〓H〓Al〓X〓 is formed. generate, while 800-950
Coated by a composition of amorphous carbon, nitrogen and hydrogen by setting in the range of °C.
AlN powder can be obtained. In addition, once the AlN precursor is generated, 800~
When treated at a temperature of 950° C., AlN powder coated with the above organic coating can be obtained as well. The reaction does not proceed at temperatures lower than 200℃, and at temperatures below 500℃
At higher temperatures, the original carbon nitride structure is destroyed until it reaches around 800℃, but crystalline AlN
However, at temperatures higher than 950°C, the coating composition of amorphous carbon, nitrogen, and hydrogen decomposes and scatters, forming ordinary powdered AlN.
Changes to The Al compound is used and reacted at a ratio of 0.8 to 2.0 mol, preferably 0.9 to 1.5 mol, per 210 g of carbon nitride as a raw material. If it is less than 0.8mol,
This is undesirable because unreacted carbon nitride remains.
On the other hand, if the amount exceeds 2.0 mol, there will be a large amount of unreacted Al salt, making it difficult to remove it. This is 200~500℃
The same is true for both the reaction at 800 and 950°C. In the present invention, the product obtained when the reaction is carried out at a temperature of 200 to 500°C is a yellow powder, and the X-ray diffraction spectrum and IR spectrum show that the structure of carbon nitride, which is the raw material, is mostly preserved and is surrounded by >NH. lost
Al metal is incorporated into 0.394 nm pores, and when incorporated, >NH hydrogen and Al salt react and some of it is lost as an acid, but some of the acid groups of the remaining Al salt is taken into the pores as is. Therefore, this compound can be represented in the form C 6 N〓H〓Al〓X〓. The above compound is stable and hardly absorbs moisture or decomposes even when exposed to air. On the other hand, the compound produced when the reaction temperature was 800 to 950°C was a white to grayish powder, which was found to be AlN powder as a result of X-ray diffraction. However, the presence of other organic substances was confirmed from the IR spectra and elemental analysis of these compounds, and since these organic substances do not appear at all in the X-ray diffraction diagram, they are considered amorphous, and subtracting the confirmed composition of AlN, it is assumed that the organic substances are amorphous. The composition has a molar ratio of C:N:H=(0
-1.5):(0-1.5):(0-1.0).
AlN powder is coated with these films, so it is not easily oxidized, and these organic films sublime and decompose when heated above 1000℃, but these films are all composed of reducing substances. Therefore, no oxygen is left on the surface during sublimation and decomposition. Therefore, by heat-treating the powder at 1000° C. or higher immediately before molding, after molding, and before sintering, it is possible to obtain AlN ceramics with high thermal conductivity and no oxygen in the sintered body. It was found that the AlN powder obtained in the present invention cannot be obtained by a reaction between melamine, etc., which is a raw material for carbon nitride, and an Al salt, but is only produced once it passes through a precursor. Therefore, the AlN powder of the present invention is advantageous for producing oxygen-free ceramics coated with organic matter.
Only with the method of the invention is this possible. [Example] Hereinafter, the present invention will be explained in detail with reference to Examples. Example 1 In a quartz reaction tube, 1.0 g of carbon nitride and 0.66 g of AlCl 3
The mixture was placed in a reaction dish and placed in a nitrogen stream.
The temperature was raised to 500°C and the mixture was reacted for 3 hours. As the temperature was gradually raised from room temperature, the reaction started at about 120°C and HCl was released, as revealed by the IR spectrum of the produced gas. The temperature is about 300
When the temperature reached 500°C, the reaction proceeded vigorously, and the release of HCl almost stopped 3 hours after reaching 500°C. Although 1.22 g of the product was more yellow in color than the original carbon nitride, it existed stably in the air with almost no moisture absorption or decomposition. The elemental analysis values of this product and its composition are shown in Table 1. Next, the X-ray diffraction diagram of the product is shown in Figure 1. Although the crystallinity is lower than that of the raw material carbon nitride, the position of the diffraction line of the 002 plane does not change much.
The interlayer distance did not change much. FIG. 3 shows the IR spectrum of the product of this example. This figure is almost the same as that of the raw material carbon nitride, and it can be seen that the product retains the skeleton of the raw material as it is. However, absorption at 2186 cm -1 indicating CN stretching and absorption at 2980 cm -1 indicating CH stretching were observed, suggesting that some decomposition occurred during the exothermic reaction and the structure was disordered. Based on the above data, the mechanism and structure of the reaction are thought to be as follows. As mentioned above, carbon nitride has one 0.394 nm hole surrounded by >NH in the unit cell,
This >NH is highly reactive and is thought to cause a dehydrochlorination reaction with AlCl 3 to take Al and unreacted Cl into the pores. Therefore, most of the original structure is retained and the layer spacing is almost unchanged, but the structure is slightly disordered. In this way, it is thought that three molecules of AlCl react with one unit cell of carbon nitride in this reaction, but in reality, when the reaction is carried out at that molar ratio, the yield of the product is good, and in this example The ideal chemical formula for carbon nitride is [(C 3 N 3 ) 2 (NH) 3 ]
On the other hand, Al is 0.9, which is almost 1. Example 2 Example 1 except that the reaction temperature was set at 900°C.
The reaction was carried out under the same conditions. The reaction proceeded in the same manner as in Example 1 up to 500°C,
White powder is generated in the low temperature part of the electric furnace at around 600℃,
Furthermore, black powder was generated at around 800℃. After the reaction is complete, a slightly grayish white powder is produced at 0.30%.
g remained. The product was stable in air. Table 1 shows the results of elemental analysis of the product and the molar composition of the compound calculated from this. This result shows that almost no Al used in the reaction was lost.
It was discovered that the products produced during the process were organic substances consisting of nitrogen, carbon, and hydrogen. The X-ray diffraction pattern of the final product is shown in Figure 2, and this diffraction pattern matched that of AlN, indicating that it was AlN powder. However, the results of elemental analysis are
The products are considered to be a mixture of these, as they still contain significant amounts of carbon, excess nitrogen, and a small amount of hydrogen, but the absence of this peak in the X-ray diffraction pattern suggests that they are amorphous. Next, the IR spectrum of the product is shown in Figure 4, and this spectrum is also completely different from that of the original carbon nitride. AlN shows almost no absorption peak even in IR,
When these spectra were examined, C, N, H
It was found that the peak was related to From this, it is considered that the surface of the product at 900° C. is coated with an amorphous organic substance composed of C, N, and H. The elemental analysis values of this product after treatment at 1000°C are also shown in Table 1, and as a result of such treatment, the organic matter on the surface sublimated and decomposed, leaving only AlN.

【表】 比較例 1 トリアジン環を含み、窒化物セラミツクスの窒
素源として使用されるメラミン1gとAlCl30.66
gを実施例1と同様の条件で反応させたが、300
℃付近で両者が融解し、気泡を発生し、茶色の生
成物が得られ、さらに昇温すると黒色に変色し、
AlN粉末は得られなかつた。 [発明の効果] 本発明によるAlN粉末の前駆体となる窒化炭
素のAl塩化合物は窒化炭素の>NHで囲まれた空
孔内にAlおよびAlと化合している酸基の一部を
取り込んだ新規な構造体であり、これらの金属は
置換の可能性があり、またこの化合物をさらに高
い温度で処理することにより、有機物で被覆され
たAlN粉末を製造することができ、この粉末を
使用することにより酸素を含有しない高熱伝導度
のAlNセラミツクスの製造ができるなど種々の
有用な用途が考えられる。
[Table] Comparative Example 1 1 g of melamine containing a triazine ring and used as a nitrogen source for nitride ceramics and AlCl 3 0.66
g was reacted under the same conditions as in Example 1, but 300
At around ℃, both melt, bubbles are generated, and a brown product is obtained. When the temperature is further increased, the color changes to black.
No AlN powder was obtained. [Effect of the invention] The Al salt compound of carbon nitride, which is the precursor of the AlN powder according to the present invention, incorporates a part of Al and the acid groups combined with Al into the pores surrounded by >NH of carbon nitride. It is a novel structure, these metals can be substituted, and by processing this compound at higher temperatures, organic-coated AlN powder can be produced, and this powder can be used. By doing so, various useful applications can be considered, such as the production of oxygen-free AlN ceramics with high thermal conductivity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、原料となる窒化炭素とAlCl3を500
℃の温度で反応させた時の化合物のX線回析図で
あり、第2図は、同様の反応を900℃で行つた時
のX線回析図である。また、第3図は、原料とな
る窒化炭素とAlCl3を500℃の温度で反応させた
時の化合物のIRスペクトルであり、第4図は、
同様の反応を900℃で行つた時のIRスペクトルで
ある。
Figure 1 shows the raw materials carbon nitride and AlCl 3
FIG. 2 is an X-ray diffraction diagram of the compound when the reaction was carried out at a temperature of 900°C. FIG. In addition, Figure 3 shows the IR spectrum of the compound obtained by reacting raw material carbon nitride and AlCl 3 at a temperature of 500°C, and Figure 4 shows the
This is an IR spectrum obtained when a similar reaction was carried out at 900°C.

Claims (1)

【特許請求の範囲】 1 一般式C6N〓H〓Al〓X〓(ただし、8≦α≦10,
0≦β≦10,0.6≦γ≦1.5,0≦δ≦1,Xは酸
基を示す。)で表わされる層状構造を有する窒化
炭素のAl塩化合物。 2 一般式[(C3N32NxHy](ただし、2≦x≦
4,0≦y≦8)で表わされる窒化炭素をAl塩
と200〜500℃の温度範囲で反応させることを特徴
とする一般式C6N〓H〓Al〓X〓(ただし、8≦α≦
10,0≦β≦10,0.6≦γ≦1.5,0≦δ≦1,X
は酸基を示す。)で表わされる層状構造を有する
窒化炭素のAl塩化合物の製造法。 3 一般式C6N〓H〓Al〓X〓(ただし、8≦α≦10,
0≦β≦10,0.6≦γ≦1.5,0≦δ≦1,Xは酸
基を示す。)で表わされる窒化炭素のAl塩化合物
を更に800〜950℃で熱処理させることにより得ら
れるあるいは一般式[(C3N32NxHy](ただし、
2≦x≦4,0≦y≦8)で表わされる窒化炭素
をAl塩と800〜950℃で反応させることにより得
られる、アモルフアスの炭素、窒素、水素からな
る組成物[ただし、そのモル比がC:N:H=
(0〜1.5):(0〜1.5):(0〜1.0)]の皮膜によ

被覆されたAlN粉末。
[Claims] 1 General formula C 6 N〓H〓Al〓X〓 (however, 8≦α≦10,
0≦β≦10, 0.6≦γ≦1.5, 0≦δ≦1, X represents an acid group. ) Al salt compound of carbon nitride with a layered structure. 2 General formula [(C 3 N 3 ) 2 N x H y ] (However, 2≦x≦
The general formula C 6 N〓H〓Al〓X〓 (where 8≦α ≦
10, 0≦β≦10, 0.6≦γ≦1.5, 0≦δ≦1, X
indicates an acid group. ) A method for producing a carbon nitride Al salt compound having a layered structure. 3 General formula C 6 N〓H〓Al〓X〓 (However, 8≦α≦10,
0≦β≦10, 0.6≦γ≦1.5, 0≦δ≦1, X represents an acid group. ) can be obtained by further heat-treating a carbon nitride Al salt compound represented by the formula [(C 3 N 3 ) 2 N x H y ] (however,
A composition consisting of amorphous carbon, nitrogen, and hydrogen obtained by reacting carbon nitride represented by 2≦x≦4, 0≦y≦8) with an Al salt at 800 to 950°C [however, the molar ratio is C:N:H=
AlN powder coated with a film of (0-1.5):(0-1.5):(0-1.0)].
JP1138076A 1989-05-24 1989-05-31 Aluminum salt compound of carbon nitride and its preparation Granted JPH036224A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP1138076A JPH036224A (en) 1989-05-31 1989-05-31 Aluminum salt compound of carbon nitride and its preparation
GB9010363A GB2232991B (en) 1989-05-24 1990-05-09 Metal containing derivatives of aminotriazine polymer and method of preparing same
US07/524,040 US5225280A (en) 1989-05-24 1990-05-16 Metal containing derivatives of aminotriazine polymer and method of preparing same
DE4016638A DE4016638A1 (en) 1989-05-24 1990-05-23 METALLIC DERIVATIVES OF AMINOTRIAZINE POLYMERS AND METHOD FOR THE PRODUCTION THEREOF
FR9006480A FR2649985B1 (en) 1989-05-24 1990-05-23 METAL-CONTAINING DERIVATIVES OF AN AMINOTRIAZINE POLYMER AND PREPARATION METHOD
GB9310763A GB2266092B (en) 1989-05-24 1993-05-25 Coated aluminum nitride powder and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1138076A JPH036224A (en) 1989-05-31 1989-05-31 Aluminum salt compound of carbon nitride and its preparation

Publications (2)

Publication Number Publication Date
JPH036224A JPH036224A (en) 1991-01-11
JPH0550443B2 true JPH0550443B2 (en) 1993-07-29

Family

ID=15213400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1138076A Granted JPH036224A (en) 1989-05-24 1989-05-31 Aluminum salt compound of carbon nitride and its preparation

Country Status (1)

Country Link
JP (1) JPH036224A (en)

Also Published As

Publication number Publication date
JPH036224A (en) 1991-01-11

Similar Documents

Publication Publication Date Title
Selvaduray et al. Aluminium nitride: review of synthesis methods
Qiu et al. Metal‐urea complex—a precursor to metal nitrides
Baixia et al. Preparation of aluminium nitride from organometallic/polymeric precursors
JPH0134925B2 (en)
JP2000327312A (en) Production of spherical boron nitride and its precursor substance, production facility and product
JPS6112844B2 (en)
US4594330A (en) Fine amorphous powder and process for preparing fine powdery mixture of silicon nitride and silicon carbide
US4511493A (en) Ternary intercalation compound of a graphite with a metal fluoride and fluorine, a process for producing the same, and an electrically conductive material comprising the ternary intercalation compound
US5606056A (en) Carbon nitride and its synthesis
Axelbaum et al. Gas-phase combustion synthesis of aluminum nitride powder
EP0334469B1 (en) Gas phase preparation of aluminium nitride or a mixture of aluminium and boron nitrides
US4426366A (en) Novel molybdenum oxycarbonitride compositions
Thorne et al. Synthesis of SiC/TaC ceramics from tantalum alkoxide modified polycarbosilane
JPH0550443B2 (en)
JP2598227B2 (en) Method for producing powder for ceramics made of metal and / or nonmetal nitride and / or carbide by flash pyrolysis and said powder
US7060237B1 (en) Non-aqueous borate routes to boron nitride
CN120981422A (en) Hexagonal boron nitride powder and its manufacturing method
US7192644B2 (en) Non-aqueous borate routes to boron nitride
JP4065945B2 (en) Method for producing water-resistant aluminum nitride powder coated with carbonaceous film
GB2221679A (en) Aminotriazine polymers and method of preparing same
US5225280A (en) Metal containing derivatives of aminotriazine polymer and method of preparing same
JPH08290905A (en) Hexagonal boron nitride powder and its production
Kulinich et al. On some alkali-and alkaline-earth-metal boron nitrides, unsaturated with boron
JPH044966B2 (en)
JP3539777B2 (en) Manufacturing method of aluminum nitride