JPH0550472B2 - - Google Patents
Info
- Publication number
- JPH0550472B2 JPH0550472B2 JP20753289A JP20753289A JPH0550472B2 JP H0550472 B2 JPH0550472 B2 JP H0550472B2 JP 20753289 A JP20753289 A JP 20753289A JP 20753289 A JP20753289 A JP 20753289A JP H0550472 B2 JPH0550472 B2 JP H0550472B2
- Authority
- JP
- Japan
- Prior art keywords
- pedestal
- alumina
- ceramic
- copper
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 71
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 50
- 239000000843 powder Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 42
- 239000000919 ceramic Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 238000005304 joining Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 66
- 229910052802 copper Inorganic materials 0.000 description 66
- 239000000463 material Substances 0.000 description 13
- 239000000047 product Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 4
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 4
- 229940112669 cuprous oxide Drugs 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229960004643 cupric oxide Drugs 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
[産業上の利用分野]
本発明は、セラミツク基板に金属板を直接接合
する方法に関し、特にアルミナ粉末の使用によ
り、接合金属板と台座との溶着を巧妙に防止して
工業的量産に適するように改善された金属とセラ
ミツクとの接合方法に関するものである。
[従来技術]
従来セラミツク基板としてのアルミナ基板と、
金属板である銅板とを接合する方法としては、バ
インダーを含んだ銅ペーストをアルミナ基板上に
塗布し、乾燥焼成してアルミナ基板中のガラス形
成物質と銅ペースト中のバインダーとを反応さ
せ、かつその反応生成物を銅とも反応させて接合
する方法、あるいはアルミナ基板と銅板との間に
反応金属(ろう材)をはさみ込み、反応金属の融
点よりも高い温度で、アルミナ基板と反応金属、
および銅板と反応金属との間にそれぞれ拡散反応
を起させて接合する方法などが知られている。
しかし最近、半導体装置は大電力化、高集積化
およびモジユール化の方向に進展しており、セラ
ミツク基板の高放熱性化、半導体実装の簡略化、
高信頼化の要求に対応して、前述の銅ペーストや
ろう材を用いないでアルミナ基板上に銅回路板を
直接接合する方法が用いられるようになつてい
る。
英国特許公報第761045号に記載されている銅と
セラミツク基板との直接接合方法は、あらかじめ
銅を強く酸化し、その銅をアルミナ基板上に配置
し、両者を1083℃(銅の融点)より高く、かつ酸
化第1銅の融点(約1200℃)よりも低い温度で加
熱するというものである。加熱サイクル中に酸化
第2銅はほとんど酸化第1銅に転化するので銅板
は融点に達し融解するが酸化第1銅は融解されな
いで、アルミナ基板と銅との境界領域には酸化第
1銅層が存在することになると述べられている。
また特公昭60−4154号により開示された「セラ
ミツクからなる基体に銅部材を結合する方法」に
は銅板とセラミツク基板とを接合配置する前に、
予め銅部材表面またはセラミツク基板上に200〜
5000Åの厚さの銅酸化物層を形成し、次に銅部材
とセラミツク基板とを重ね合わせて不活性雰囲気
中に置き、銅部材とセラミツク基板との界面に銅
部材と銅酸化物の亜共晶融体が形成されるような
温度すなわち1065℃(Cu−O共晶温度)と1083
℃との間の温度に加熱した後冷却することからな
る直接接合方法が記載されている。
更に本発明者による特開昭63−166774号「銅板
とアルミナ基板との接合体の製造方法」には、相
互に接触させた銅板とアルミナ基板とを不活性雰
囲気中で、1083℃よりも低い温度に加熱すること
により、接触部に銅と銅酸化物の共晶液相を形成
させること無く、銅とアルミナ基板表面のアルミ
ナおよびガラス質形成物質との化合物を形成さ
せ、次いで冷却することからなる直接接合方法が
開示されている。この場合、直接接合される銅板
とアルミナ基板とをコンベア炉に搬入する際、重
ね合わせたものをSiC製の台座上に配置して自動
搬入し、コンベア炉内で接合のための加熱処理を
している。
[発明が解決しようとする課題]
しかしながら上述の手段でSiC製の台座を使用
する場合、次のような問題点があることがわかつ
た。
まず、SiC台座の製作そのもの、すなわちSiC
の焼結が難しいこと、またSiC粉の製造工程やそ
の焼結時に遊離Siや遊離Cが発生してこれらが台
座に含まれているため、この状態で台座上に、銅
板と重ねたアルミナ基板を配置して不活性雰囲気
中で接合処理を行うと適切な雰囲気が維持できな
くなり、特に遊離Siが存在すると、銅板と遊離Si
とが合金化して金色を呈する等の問題点を有する
ことが判明した。また、この合金化により銅板と
SiC台座とが溶着してしまうため、台座からの取
り外しが困難または不可能となり、たとえ取り外
せたとしても得られた接合体は製品として市場に
出せるものではなくなつてしまつた。
一方、遊離Cの存在は、銅板とアルミナ基板と
の接触面の一部に局所的な範囲で還元雰囲気を生
ずることとなり、接合界面に形成されるべき酸化
物の形成が阻害されるため、この部分が非接合部
分となりやすいことが判明した。
従つて、この方法で、量産を計ろうとすれば、
品質の低下を防ぐための検査工程が大規模なもの
となり、コスト高の要因となるため、何らかの解
決手段が求められていた。
[課題を解決するための手段]
本発明者等は斯る課題を解決するため鋭意研究
していたところ、セラミツク台座にアルミナ製の
ものを用いると共に、該アルミナ製台座表面に更
にアルミナ粉末を塗布などにより配置して使用す
ることにより上述の課題を全て解決できることを
見い出し、本発明を達成することができた。
すなわち本発明は、その最も好ましい態様にお
いては、相互に接触させて重ね合わせた少なくと
も1枚の金属板と少なくとも1枚のセラミツク基
板とからなる積層体を不活性雰囲気中において接
合させる方法であつて、積層体最下部の金属板を
支持する台座としてアルミナ製の台座を用い、更
にその上にアルミナ粉末を配置する第1工程;
上記アルミナ粉末上に相互に接触させた金属板
とセラミツク基板との積層体を載せて不活性雰囲
気中で接合させるための加熱処理をする第2工
程;及び
積層体最下部の金属板に溶着したアルミナ粉末
を酸処理により溶解除去する第3工程;
からなることを特徴とする金属とセラミツクとの
接合方法を提供するものである。ただし、本発明
は、セラミツク台座上にセラミツク粉末を配置
し、該セラミツク粉末上に接合すべき積層体をの
せて加熱処理することにより積層体を接合体とし
て得た後、該接合体の金属表面に溶着したセラミ
ツク粉末を金属表面の酸処理により除去すること
を特徴とする方法を提供するものであるから、セ
ラミツク台座及びセラミツク粉末は、アルミナ製
のものを用いることが好ましいが、必ずしもアル
ミナに限定されるものではない。
[作用]
本発明方法で使用する台座の材質としては、接
合時の雰囲気を阻害しない安定な物質、つまり高
温下で分解や解離をすることがなく、且つ工業的
に安定したものであり、その上に、接合処理後得
られた接合体製品を容易に取り外しできるもので
あればよい。
高温で銅板と反応しないセラミツク基板として
は、非酸化物系のセラミツク材が適切であろうと
考えられるが、実際に試験してみると高温下で一
部の分解、解離を生じるものが多く、また、原料
粉を製造する段階やセラミツク材の焼結体を製造
する段階で遊離成分を発生することが多い。
本発明者等は、種々の非酸化物系セラミツク材
を用いて数多く実験を重ねたが、局所的な還元雰
囲気が生じて使用したタフピツチ銅が部分的に還
元される場合が多いことを確認した。そこで、非
酸化物系セラミツク材の使用を断念し、酸化物系
セラミツク材の使用を検討することにした。
しかし、酸化物系セラミツク材は、適当な温
度、雰囲気条件下で銅板と接合されてしまう。従
つて、これを台座の材料として用いると製品に台
座がついてしまい、製品にならない。しかも、そ
の接着強度はかなり大きいため、容易に分離でき
ない。
そこで本発明者等は、酸化物系セラミツク材か
らなる台座を用い、更に適当なセラミツク粉末を
金属板と接すべき台座表面に配置して使用すれ
ば、台座と銅板とが直接接合することを防止でき
ると共に、銅板に接合されたアルミナ粉末は台座
からは分離されているものであるため、得られた
接合体は容易に台座から離れるであろうと推定し
て実験したところ、推定通りの効果が得られるこ
とを確認したものである。
本発明方法で用いるセラミツク粉末として実施
例ではアルミナ粉末を用いたが、これは、(1)安価
である、(2)アルミナ粉末を塗布する台座と同じ材
質であるため同じ熱容量を持ち、接合体の昇温時
における温度コントロールが行いやすい、(3)アル
ミナ材は高温下で安定であり、還元性雰囲気を作
らない、等の理由による。また、アルミナ粉末を
塗布する台座としてアルミナ材の台座を用いた理
由も、上記(1)〜(3)と実質的に同じである。
上記アルミナ粉末としては粒径数10μm〜数μm
の物を用いるのが好ましいことを実験等で確認し
ている。
接合のための加熱処理により、台座上にセラミ
ツク粉末を介して配置された積層体中の銅板とア
ルミナ基板との直接接合が行われると共に、台座
上に配置されたアルミナ粉末も銅板の一部と接合
する。しかし、アルミナ製台座そのものはその上
に敷かれたアルミナ粉末とは接合せず、またアル
ミナ粉末を介して接している銅材とも接合しない
ことが確認された。このため台座から接合体を分
離することは容易であつた。
銅板に接合されたアルミナ粉末を除去する方法
としては、研磨や振動などの機械的除去法もある
が、これらの方法では、接合体に衝撃を与えるた
え好ましくない、また銅板の表面に傷が生じて製
品として不適当なものとなり易い。そこで本発明
者等は、銅板が酸によりエツチングされる性質を
利用して、接合体全体を酸溶液中に浸漬して銅表
面全体を溶解し、アルミナ粉末を除去することを
考えたのである。
この場合、アルミナ粉末と銅板とは点接触の状
態で接合されているため、酸溶液中に接合体を浸
漬すると、酸が点接合部周辺から短時間で廻り込
んで銅を溶解し、これによつて点接合したアルミ
ナ粉末を容易に除去することができた。
アルミナ粉末と点接合している部分は、その周
囲部分に比べエツチング溶液と接する時間が短く
なるが、点接合していた部分に製品として問題と
なるような痕跡は残らないことを確認した。本発
明方法で採用される接合温度領域下では、アルミ
ナ粉末が焼結されることはなく、また銅板に接合
されたアルミナ粉末のうちには広い接触面をもつ
て面接合しているためにエツチングによる除去が
困難というものはなかつた。
以下、実施例により詳細に説明する。
[実施例 1]
互いに接合させるための銅板およびアルミナ基
板として、厚さ0.3mm、サイズ28mm×40mmのタフ
ピツチ銅と厚さ0.635mm、サイズ30mm×42mmの96
%アルミナ基板とを準備した。
台座として50mm×50mm×0.635mmtの96%アルミ
ナ板からなるものを用い、第1図に示すように、
該台座4の表面上に粒径2〜10μm以内のアルミ
ナ粉末3を塗布し(第1工程)、次いでこの台座
上に第1図に示すように下から銅板22、アルミ
ナ基板1、銅板21の順に重ね合わせた積層体を
載せてコンベア炉内に搬入し、酸素濃度10ppmの
窒素ガスからなる不活性雰囲気下で、1063℃、
1067℃、1075℃の各温度にそれぞれ制御した接合
条件の下で接合を行なわせた(第2工程)。
得られた接合体を冷却後、大気中に取り出して
接合体と台座との接合状態について調べた結果を
第1表に示す。
この場合の接合状態についての評価は、試料と
して各20個を用いて加熱処理後、台座を90°回転
させて積層体との接触面が鉛直になるように立て
たときに、接合された積層体が自然に、台座から
離れたものの個数を「台座と接合なし」の欄に記
し、それ以外のものを「台座と接合した」の欄に
記した。
[Industrial Field of Application] The present invention relates to a method for directly bonding a metal plate to a ceramic substrate, and in particular uses alumina powder to cleverly prevent welding between the bonded metal plate and the pedestal, making it suitable for industrial mass production. The present invention relates to an improved method for joining metal and ceramic. [Prior art] An alumina substrate used as a conventional ceramic substrate,
The method of joining a copper plate, which is a metal plate, is to apply a copper paste containing a binder onto an alumina substrate, dry and fire it, and cause the glass-forming substance in the alumina substrate to react with the binder in the copper paste. There is a method of bonding by reacting the reaction product with copper, or a method of sandwiching a reactive metal (brazing material) between the alumina substrate and the copper plate, and bonding the alumina substrate and the reactive metal at a temperature higher than the melting point of the reactive metal.
Also known are methods of bonding by causing a diffusion reaction between a copper plate and a reactive metal, respectively. However, recently, semiconductor devices have been progressing toward higher power consumption, higher integration, and modularization, resulting in higher heat dissipation of ceramic substrates, simpler semiconductor packaging,
In response to the demand for higher reliability, a method of directly bonding a copper circuit board onto an alumina substrate without using the aforementioned copper paste or brazing material has come into use. The direct bonding method for copper and ceramic substrates described in British Patent Publication No. 761045 involves strongly oxidizing copper in advance, placing the copper on an alumina substrate, and heating both to a temperature higher than 1083°C (the melting point of copper). , and heated at a temperature lower than the melting point of cuprous oxide (approximately 1200°C). During the heating cycle, most of the cupric oxide is converted to cuprous oxide, so the copper plate reaches its melting point and melts, but the cuprous oxide is not melted, and a layer of cuprous oxide is formed in the boundary area between the alumina substrate and the copper. It is stated that there will be. Furthermore, in the ``Method for bonding a copper member to a ceramic substrate'' disclosed in Japanese Patent Publication No. 60-4154, before bonding and arranging a copper plate and a ceramic substrate,
200~ on the copper member surface or ceramic substrate in advance
A copper oxide layer with a thickness of 5000 Å is formed, and then the copper member and the ceramic substrate are stacked together and placed in an inert atmosphere. The temperature at which a crystalline melt is formed is 1065℃ (Cu-O eutectic temperature) and 1083℃.
A direct bonding method has been described which consists of heating to a temperature between 0.degree. C. and cooling. Furthermore, in Japanese Patent Application Laid-Open No. 63-166774 entitled "Method for manufacturing a bonded body of a copper plate and an alumina substrate," a copper plate and an alumina substrate that are in contact with each other are heated in an inert atmosphere at a temperature lower than 1083°C. By heating to a high temperature, a compound is formed between the copper and the alumina and glass-forming substance on the surface of the alumina substrate without forming a eutectic liquid phase of copper and copper oxide at the contact area, and then cooling. A direct bonding method is disclosed. In this case, when carrying the copper plate and alumina substrate to be directly bonded into a conveyor furnace, the stacked sheets are placed on a SiC pedestal, automatically carried in, and heat treated for bonding in the conveyor furnace. ing. [Problems to be Solved by the Invention] However, when using the SiC pedestal in the above-described manner, it has been found that there are the following problems. First, the production itself of the SiC pedestal, that is, the SiC
It is difficult to sinter SiC powder, and free Si and free C are generated during the manufacturing process of SiC powder and during its sintering, and these are contained in the pedestal. If the bonding process is performed in an inert atmosphere with the copper plate placed, an appropriate atmosphere cannot be maintained, especially if free Si is present,
It has been found that there are problems such as the formation of an alloy and the appearance of a golden color. In addition, this alloying makes it possible to bond with copper plates.
Since it is welded to the SiC pedestal, it becomes difficult or impossible to remove it from the pedestal, and even if it can be removed, the resulting joined body cannot be marketed as a product. On the other hand, the presence of free C creates a local reducing atmosphere in a part of the contact surface between the copper plate and the alumina substrate, which inhibits the formation of oxides that should be formed at the bonding interface. It was found that the parts tend to become non-bonded parts. Therefore, if you try to mass produce using this method,
Since the inspection process to prevent quality deterioration has become large-scale, which is a factor in high costs, some kind of solution has been needed. [Means for Solving the Problem] The inventors of the present invention conducted extensive research to solve the problem, and found that they used a ceramic pedestal made of alumina, and further coated the surface of the alumina pedestal with alumina powder. The inventors have discovered that all of the above-mentioned problems can be solved by arranging and using the device, and have achieved the present invention. That is, the present invention, in its most preferred embodiment, is a method of bonding a laminate consisting of at least one metal plate and at least one ceramic substrate stacked in contact with each other in an inert atmosphere. , the first step is to use an alumina pedestal as a pedestal to support the metal plate at the bottom of the laminate, and further place alumina powder on it; the metal plate and the ceramic substrate are brought into contact with each other on the alumina powder; A second step in which the laminate is placed and heat treated for bonding in an inert atmosphere; and a third step in which the alumina powder welded to the metal plate at the bottom of the laminate is dissolved and removed by acid treatment. The present invention provides a method for joining metal and ceramic with special characteristics. However, in the present invention, ceramic powder is placed on a ceramic pedestal, a laminate to be bonded is placed on the ceramic powder and heat treated to obtain a laminate as a bonded body, and then the metal surface of the bonded body is Since the present invention provides a method characterized in that ceramic powder welded to the metal surface is removed by acid treatment of the metal surface, it is preferable to use a ceramic pedestal and ceramic powder made of alumina, but it is not necessarily limited to alumina. It is not something that will be done. [Function] The material of the pedestal used in the method of the present invention is a stable material that does not disturb the atmosphere during bonding, that is, it does not decompose or dissociate at high temperatures, and is industrially stable. Moreover, any material may be used as long as the bonded product obtained after the bonding process can be easily removed. Non-oxide ceramic materials are thought to be appropriate as ceramic substrates that do not react with the copper plate at high temperatures, but in actual tests, many of them partially decompose or dissociate at high temperatures. Free components are often generated during the production of raw material powder and the production of ceramic sintered bodies. The present inventors have conducted numerous experiments using various non-oxide ceramic materials, and have confirmed that in many cases, the tough pitch copper used is partially reduced due to the formation of a local reducing atmosphere. . Therefore, we decided to abandon the use of non-oxide ceramic materials and consider using oxide ceramic materials. However, oxide ceramic materials are bonded to copper plates under appropriate temperature and atmospheric conditions. Therefore, if this is used as a material for a pedestal, the pedestal will be attached to the product and the product will not be finished. Moreover, since the adhesive strength is quite high, it cannot be easily separated. Therefore, the present inventors have found that by using a pedestal made of oxide-based ceramic material and further placing appropriate ceramic powder on the surface of the pedestal that should be in contact with the metal plate, the pedestal and the copper plate can be directly bonded. In addition, since the alumina powder bonded to the copper plate is separated from the pedestal, we conducted an experiment assuming that the resulting bonded body would easily separate from the pedestal, and found that the effect was as expected. This has been confirmed to be possible. In the examples, alumina powder was used as the ceramic powder used in the method of the present invention, but it is (1) inexpensive, (2) it is made of the same material as the pedestal to which the alumina powder is applied, so it has the same heat capacity, and (3) Alumina material is stable at high temperatures and does not create a reducing atmosphere. Furthermore, the reason for using an alumina pedestal as the pedestal on which alumina powder is applied is substantially the same as in (1) to (3) above. The above alumina powder has a particle size of several tens of micrometers to several micrometers.
It has been confirmed through experiments that it is preferable to use By heat treatment for bonding, the copper plate in the laminate placed on the pedestal via the ceramic powder and the alumina substrate are directly bonded, and the alumina powder placed on the pedestal also becomes part of the copper plate. Join. However, it was confirmed that the alumina pedestal itself did not bond to the alumina powder spread on it, nor did it bond to the copper material that was in contact with it via the alumina powder. Therefore, it was easy to separate the joined body from the pedestal. There are mechanical removal methods such as polishing and vibration to remove the alumina powder bonded to the copper plate, but these methods are undesirable as they give a shock to the bonded body, and they also cause scratches on the surface of the copper plate. This tends to result in unsuitable products. Therefore, the present inventors took advantage of the property that copper plates are etched by acid, and devised a method of immersing the entire bonded body in an acid solution to dissolve the entire copper surface and remove the alumina powder. In this case, the alumina powder and the copper plate are bonded in a point contact state, so when the bonded body is immersed in an acid solution, the acid quickly circulates around the point bond and dissolves the copper. Therefore, the point-bonded alumina powder could be easily removed. Although the part that is point-bonded to the alumina powder is in contact with the etching solution for a shorter period of time than the surrounding area, it was confirmed that there were no traces left in the spot-bonded part that would pose a problem as a product. Under the bonding temperature range adopted in the method of the present invention, the alumina powder is not sintered, and some of the alumina powder bonded to the copper plate is surface-to-face bonded with a wide contact surface, so etching may occur. There was nothing that was difficult to remove. Hereinafter, it will be explained in detail using examples. [Example 1] As a copper plate and an alumina substrate to be bonded to each other, a tough pitch copper plate with a thickness of 0.3 mm and a size of 28 mm x 40 mm and a 96 plate with a thickness of 0.635 mm and a size of 30 mm x 42 mm were used.
% alumina substrate was prepared. A 96% alumina plate measuring 50 mm x 50 mm x 0.635 mm t was used as the pedestal, as shown in Figure 1.
Alumina powder 3 having a particle size of 2 to 10 μm is applied onto the surface of the pedestal 4 (first step), and then a copper plate 22, an alumina substrate 1, and a copper plate 21 are placed on the pedestal from below as shown in FIG. The laminated bodies were stacked one on top of the other and transported into a conveyor furnace, where they were heated at 1063℃ under an inert atmosphere consisting of nitrogen gas with an oxygen concentration of 10ppm.
Bonding was performed under bonding conditions controlled at temperatures of 1067° C. and 1075° C. (second step). After the obtained joined body was cooled, it was taken out into the atmosphere and the state of bonding between the joined body and the pedestal was investigated. Table 1 shows the results. In this case, the bonding condition was evaluated using 20 samples of each type, and after heat treatment, the pedestal was rotated 90 degrees and stood up so that the contact surface with the laminate was vertical. The number of cases in which the body naturally separated from the pedestal was recorded in the ``Not connected to the pedestal'' column, and the other cases were recorded in the ``Connected to the pedestal'' column.
【表】
第1表より接合の完了した積層体と台座との接
合は全くなかつたことが理解できる。
第2工程で得られた接合体はその断面構造が第
2図に示すようなものであり、板厚0.635mmtのア
ルミナ基板の両面に0.3mmtの銅板21および22
が接合されている。
図中22の銅板は、本発明法において台座上に
配置されたものであり、該銅板には台座上のアル
ミナ粉末3が点接合状態で付着している。
次いでこの点接合されたアルミナ粉末3を50%
硝酸酸性溶液中に一定時間保持して溶解除去した
(第3工程)。この場合、適切な液中保持時間を定
めるため液中保持時間を種々変えてみたところ、
30秒以上保持すれば銅板22の表面に残存するア
ルミナ粉末は完全になくなり、銅板表面は健全な
ものとなることがわかつた。
30秒液中に浸漬した接合体(銅板21とアルミ
ナ基板1と銅板22の一体になつたもの)の板厚
をマイクロメーターで測定したところ、浸漬前の
板厚に比べ約2μm薄くなつただけで、接合体製品
の寸法としては何ら問題なかつた。
また、酸性溶液として50%硝酸水溶液を用いた
が、アルミナ基板は優れた耐酸化性を有する物質
であるため、アルミナ基板そのものが溶出するこ
とはなかつた。
[実施例 2]
実施例1と同様に96%アルミナ材からなる台座
を用いて、該台座上に塗布するのに適したセラミ
ツク粉末を調べる実験を行つた。使用したセラミ
ツク粉末は、2〜10μm粒径のAl2O3,AlN,
SiC,BN,Si3N4の5種類であるが、特にSiCに
ついては市販されている3社の製品を用いたので
SiCにA,B,Cの記号を付記して区別した。こ
れらの台座上に塗布したセラミツク粉末上に実施
例1と同様の銅板とアルミナ基板の積層体を配置
して積層体を得る試験を行つた結果を第2表に示
した。得られた接合体の評価は、銅板とアルミナ
基板とが健全に接合されているものを「O」、銅
板とアルミナ基板とが健全に接合されていないも
のを「X」とした。[Table] From Table 1, it can be seen that there was no bonding between the laminate and the pedestal after the bonding was completed. The cross-sectional structure of the joined body obtained in the second step is as shown in Fig. 2, with copper plates 21 and 22 of 0.3 mm thick on both sides of an alumina substrate of 0.635 mm thick.
are joined. The copper plate 22 in the figure is placed on a pedestal in the method of the present invention, and the alumina powder 3 on the pedestal is attached to the copper plate in a point-bonded state. Next, 50% of this point-bonded alumina powder 3
It was kept in a nitric acid solution for a certain period of time to dissolve and remove it (third step). In this case, we tried varying the retention time in the liquid in order to determine the appropriate retention time in the liquid, and found that
It was found that if held for 30 seconds or more, the alumina powder remaining on the surface of the copper plate 22 was completely removed, and the surface of the copper plate became healthy. When the thickness of the bonded body (copper plate 21, alumina substrate 1, and copper plate 22 integrated) that was immersed in the liquid for 30 seconds was measured with a micrometer, it was only about 2 μm thinner than the thickness before immersion. There were no problems with the dimensions of the joined product. Furthermore, although a 50% nitric acid aqueous solution was used as the acidic solution, since the alumina substrate is a substance with excellent oxidation resistance, the alumina substrate itself was not eluted. [Example 2] Similar to Example 1, a pedestal made of 96% alumina was used to conduct an experiment to investigate ceramic powder suitable for coating on the pedestal. The ceramic powders used were Al 2 O 3 , AlN,
There are five types: SiC, BN, and Si 3 N 4 , but for SiC in particular, we used commercially available products from three companies.
The symbols A, B, and C were added to SiC to distinguish them. Table 2 shows the results of a test in which a laminate of a copper plate and an alumina substrate similar to that in Example 1 was placed on the ceramic powder coated on these pedestals to obtain a laminate. The obtained bonded body was evaluated as "O" if the copper plate and alumina substrate were soundly joined, and "X" if the copper plate and alumina substrate were not soundly joined.
【表】
この時接合されなかつた銅板の結晶粒界は、接
合された銅板の結晶粒界に比べ、粒界巾が小さく
これを光学顕微鏡で観察したところタフピツチ銅
中に存在するはずのCu2O相が見られなかつた。
これは、アルミナ台座に塗布したSiC−C,
AlN,BN,Si3N4等のセラミツク粉末の解離、
分解によりタフピツチ銅が脱酸されたことによる
ものと考えられる。このことからもセラミツク粉
末としてAl2O3粉末を使用するのみならず台座の
材質としてもアルミナ材を用いると接合時に安定
な雰囲気が形成されることがわかる。これはアル
ミナ材が非常に安定な物質であることによるもの
である。
[発明の効果]
以上述べたように本発明によれば、銅板とアル
ミナ基板とを安定な雰囲気下で加熱・接合するこ
とができる。また、使用する台座として安価なア
ルミナ材を用いることができるばかりでなく、台
座と銅板との接合を防止する目的にもセラミツク
粉末の使用という簡単な手段を有効に利用してい
るに過ぎないため、製造コストの低下をもたらす
ことができる。[Table] The grain boundaries of the copper plates that were not bonded at this time were smaller than those of the copper plates that were bonded, and when observed with an optical microscope, Cu 2 , which should exist in the tough pitch copper, was observed. No O phase was observed.
This is SiC-C coated on an alumina pedestal.
Dissociation of ceramic powders such as AlN, BN, Si 3 N 4 , etc.
This is thought to be due to the deoxidation of tuff pit copper due to decomposition. This also shows that a stable atmosphere is formed during bonding when not only Al 2 O 3 powder is used as the ceramic powder but also alumina material is used as the material for the pedestal. This is because alumina material is a very stable substance. [Effects of the Invention] As described above, according to the present invention, a copper plate and an alumina substrate can be heated and bonded in a stable atmosphere. In addition, not only can inexpensive alumina material be used as the pedestal, but the simple method of using ceramic powder is effectively used to prevent the pedestal from joining with the copper plate. , can bring about a reduction in manufacturing costs.
第1図は、炉内投入前の銅板とアルミナ基板の
積層体の台座上配置例を示す断面図である。第2
図は、銅板とアルミナ基板の接合体の一例を示す
断面図である。第3図は、第2図に示した接合体
を酸浸漬した後の銅板表面の溶解状態を示す模式
断面図である。
符号の説明、1……アルミナ基板、21……銅
板、22……銅板、3……アルミナ粉、4……ア
ルミナ台座。
FIG. 1 is a sectional view showing an example of the arrangement of a laminate of a copper plate and an alumina substrate on a pedestal before being put into a furnace. Second
The figure is a sectional view showing an example of a bonded body of a copper plate and an alumina substrate. FIG. 3 is a schematic cross-sectional view showing the dissolved state of the surface of the copper plate after the bonded body shown in FIG. 2 is immersed in acid. Explanation of symbols: 1...Alumina substrate, 21...Copper plate, 22...Copper plate, 3...Alumina powder, 4...Alumina pedestal.
Claims (1)
と少なくとも1枚のセラミツク基板とからなる積
層体を不活性雰囲気中に高温で保持して接合させ
る方法であつて、 積層体最下部の金属板と接触させてこれを支持
するための台座上にセラミツク粉末を配置する第
1工程; 上記セラミツク粉末上に金属板とセラミツク基
板との積層体を載せて不活性雰囲気中に高温で保
持して金属板とセラミツク基板とを接合させる第
2工程;および 積層体最下部の金属板に溶着したセラミツク粉
末を金属板表面の酸処理により溶解除去する第3
工程; からなることを特徴とする金属とセラミツクとの
接合方法。 2 上記第2工程における不活性雰囲気が、1%
以下の酸素を含む不活性雰囲気であることを特徴
とする請求項1記載の金属とセラミツクとの接合
方法。 3 前記台座がアルミナ製台座であり、前記セラ
ミツク粉末がアルミナ粉末である請求項1または
2記載の方法。[Scope of Claims] 1. A method for bonding a laminate consisting of at least one metal plate and at least one ceramic substrate alternately stacked on top of each other by holding the laminate at high temperature in an inert atmosphere, the laminate comprising: The first step is to place the ceramic powder on a pedestal for supporting the lowermost metal plate in contact with it; the laminate of the metal plate and the ceramic substrate is placed on top of the ceramic powder and placed in an inert atmosphere at a high temperature. a second step in which the metal plate and the ceramic substrate are bonded together by holding the metal plate with
A method for joining metal and ceramic, comprising the steps of: 2 The inert atmosphere in the second step is 1%
The method of joining metal and ceramic according to claim 1, characterized in that the atmosphere is an inert atmosphere containing the following oxygen: 3. The method according to claim 1 or 2, wherein the pedestal is an alumina pedestal and the ceramic powder is alumina powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20753289A JPH0369569A (en) | 1989-08-10 | 1989-08-10 | Method for joining metal to ceramic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20753289A JPH0369569A (en) | 1989-08-10 | 1989-08-10 | Method for joining metal to ceramic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0369569A JPH0369569A (en) | 1991-03-25 |
| JPH0550472B2 true JPH0550472B2 (en) | 1993-07-29 |
Family
ID=16541286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20753289A Granted JPH0369569A (en) | 1989-08-10 | 1989-08-10 | Method for joining metal to ceramic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0369569A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5664949B2 (en) * | 2008-10-07 | 2015-02-04 | ロジャース ジャーマニー ゲーエムベーハー | Method for producing metal-ceramic substrate or copper-ceramic substrate and support for use in the method |
-
1989
- 1989-08-10 JP JP20753289A patent/JPH0369569A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0369569A (en) | 1991-03-25 |
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