JPH0550837B2 - - Google Patents
Info
- Publication number
- JPH0550837B2 JPH0550837B2 JP60235399A JP23539985A JPH0550837B2 JP H0550837 B2 JPH0550837 B2 JP H0550837B2 JP 60235399 A JP60235399 A JP 60235399A JP 23539985 A JP23539985 A JP 23539985A JP H0550837 B2 JPH0550837 B2 JP H0550837B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric breakdown
- panel
- resistance
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、薄膜EL（エレクトロルミネセンス）
パネルに関し、特に基板上の背面電極と絶縁層の
間に高抵抗層を介在させて絶縁破壊を防止した薄
膜ELパネルに関するものである。[Detailed description of the invention] [Industrial application field] The present invention is directed to thin film EL (electroluminescence)
This invention relates to panels, and particularly to thin-film EL panels in which a high-resistance layer is interposed between a back electrode on a substrate and an insulating layer to prevent dielectric breakdown.
従来の薄膜ELパネルの基本構造を第２図に示
す。この種の薄膜ELパネルは、第２図に示すよ
うに、ガラス基板１上に形成された透明電極２、
第１絶縁層３、発光層４、第２絶縁層５および背
面電極６の５層からなり、発光層４は２層の絶縁
層３，５でサンドイツチ状にはさまれた構造とな
つている。また、透明電極２と背面電極６は互い
に直交するストライプ状パターン電極群となつて
おり、Ｘ−Ｙマトリツクス電極を構成している。
これらの構成層は真空蒸着法、スパツタ法などに
よる薄膜で形成されており、構成層のうち背面電
極を除く全ての薄膜は透明であり、発光した光は
ガラス基板側に取り出されるものとなつている。
Figure 2 shows the basic structure of a conventional thin-film EL panel. As shown in FIG. 2, this type of thin film EL panel includes transparent electrodes 2 formed on a glass substrate 1,
It consists of five layers: a first insulating layer 3, a light-emitting layer 4, a second insulating layer 5, and a back electrode 6, and the light-emitting layer 4 is sandwiched between the two insulating layers 3 and 5 in a sandwich-like structure. . Further, the transparent electrode 2 and the back electrode 6 form a group of striped pattern electrodes that are orthogonal to each other, and constitute an XY matrix electrode.
These constituent layers are formed of thin films by vacuum evaporation, sputtering, etc. All of the constituent layers except for the back electrode are transparent, and the emitted light is extracted to the glass substrate side. There is.
ところで、このような薄膜ELパネルは、構造
上容量性素子であり、相対する透明電極２と背面
電極６間に駆動電源８より正弦波や方形波などの
交流電圧を印加することによつて発光し、高輝
度、長寿命で、表示が見易いなどの特長を有して
いる。 By the way, such a thin film EL panel is a capacitive element in structure, and emits light by applying an alternating current voltage such as a sine wave or a square wave from a drive power source 8 between the transparent electrode 2 and the back electrode 6 facing each other. It has features such as high brightness, long life, and easy-to-read display.
ところが、上述した従来の薄膜ELパネルは、
絶縁層および発光層が真空蒸着法あるいはスパツ
タ法などによる薄膜で構成されているので、これ
ら薄膜のコンタミやピンホールによる欠陥に起因
して絶縁破壊が生じやすい。その結果、絶縁層と
発光層の絶縁破壊による非発光点の発生、さらに
は絶縁破壊の拡大による電極断線という致命的な
欠陥を引き起こす問題があつた。したがつて、欠
陥がなく絶縁破壊電圧が非常に高い絶縁層を形成
する必要があつた。
However, the conventional thin film EL panel mentioned above,
Since the insulating layer and the light emitting layer are formed of thin films formed by vacuum evaporation or sputtering, dielectric breakdown is likely to occur due to contamination of these thin films or defects due to pinholes. As a result, there was a problem in that non-light emitting points were generated due to dielectric breakdown between the insulating layer and the light emitting layer, and furthermore, the expansion of the dielectric breakdown caused a fatal defect such as electrode disconnection. Therefore, it was necessary to form an insulating layer that is free from defects and has a very high dielectric breakdown voltage.
本発明は、このような点に鑑みてなされたもの
で、絶縁層あるいは発光層の絶縁破壊を防止する
ことにより、信頼性を高め、かつ歩留りを向上さ
せた薄膜ELパネルを提供するものである。 The present invention has been made in view of the above points, and aims to provide a thin film EL panel with improved reliability and yield by preventing dielectric breakdown of the insulating layer or the light emitting layer. .
本発明に係る薄膜ELパネルは、基板上の透明
電極と背面電極間に発光層を絶縁層ではさんだ三
層構造を有する薄膜ELパネルにおいて、前記背
面電極と絶縁層との間に、膜厚方向の抵抗値にし
て１〜15KΩ／cm2を有する高抵抗層を介在したこ
とを特徴とする。
The thin-film EL panel according to the present invention has a three-layer structure in which a light-emitting layer is sandwiched between a transparent electrode on a substrate and a back electrode with an insulating layer. It is characterized by interposing a high resistance layer having a resistance value of 1 to 15 KΩ/cm 2 .
本発明においては、背面電極と絶縁層の間に高
抵抗層を介在させることにより、点欠陥部で絶縁
層あるいは発光層の絶縁破壊が発生しても高抵抗
層により流れる電流を制限するため、発熱が抑え
られる。これによつて、絶縁破壊の拡大はなく、
表示品質上問題にならない微小な点状絶縁破壊に
とどめることができる。
In the present invention, by interposing a high resistance layer between the back electrode and the insulating layer, even if dielectric breakdown of the insulating layer or the light emitting layer occurs at a point defect, the high resistance layer limits the current flowing. Fever is suppressed. This prevents the expansion of dielectric breakdown and
It is possible to limit dielectric breakdown to minute points that do not pose a problem in display quality.
以下、本発明を図面に示す実施例に基づいて詳
細に説明する。
Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第１図は本発明の一実施例を示す薄膜ELパネ
ルの基本構造図であり、この薄膜ELパネルが第
２図に示した従来のものと異なる点は、第２絶縁
層５と背面電極６との間に、抵抗値にして１〜
15KΩ／cm2を有する高抵抗層７を介在したことで
ある。 FIG. 1 is a basic structural diagram of a thin film EL panel showing an embodiment of the present invention. This thin film EL panel differs from the conventional one shown in FIG. The resistance value is 1~
This is because a high resistance layer 7 having a resistance of 15KΩ/cm 2 was provided.
従来の薄膜ELパネルの構造においては、絶縁
層３，５あるいは発光層４に点状欠陥が生じて絶
縁破壊が発生した場合にはその部分で局所的大電
流が流れて発熱し、その影響で点欠陥の周囲部の
絶縁破壊電圧は低下し絶縁破壊が拡大する不具合
があつた。 In the structure of conventional thin-film EL panels, if a point defect occurs in the insulating layers 3, 5 or the light-emitting layer 4 and dielectric breakdown occurs, a large local current flows in that area, generating heat, and as a result, There was a problem that the dielectric breakdown voltage around the point defect decreased and the dielectric breakdown expanded.
一方、本発明のごとく高抵抗層７を介在させた
ものでは、点欠陥部で絶縁層３，５あるいは発光
層４の絶縁破壊が発生しても高抵抗層７により流
れる電流を制限するため発熱が抑えられ、絶縁破
壊の拡大はなく、表示品質上問題にならない
30μm〓以下の細かい点状絶縁破壊にとどめること
ができる。 On the other hand, in the case where the high-resistance layer 7 is interposed as in the present invention, even if dielectric breakdown occurs in the insulating layers 3, 5 or the light-emitting layer 4 at a point defect, the high-resistance layer 7 limits the current flowing, so heat is generated. is suppressed, there is no expansion of dielectric breakdown, and there is no problem with display quality.
It is possible to limit dielectric breakdown to small points of 30 μm or less.
ここで、高抵抗層７の抵抗値を上記数値範囲に
限定した理由について述べる。高抵抗層７の膜厚
方向の抵抗値は、本発明者らの実験によれば、お
よそ1KΩ／cm2から絶縁破壊を抑える効果が現わ
れ、高抵抗になる程より高い効果が得られたが、
一方で高抵抗層を介在させたことによる輝度低下
も認められ、従来構造の高抵抗層を介在しない時
の輝度を100％とすると、4.5KΩ／cm2のとき90％
の輝度、15KΩ／cm2のとき80％の輝度となつた。
したがつて、この高抵抗層７の実用上望ましい膜
厚方向の抵抗値の範囲は１〜15KΩ／cm2である。
そして、この高抵抗層７の膜厚を1000Åと設定す
ると１×108〜1.5×109ΩΓcm、膜厚を10000Åと
設定すると１×107〜1.5×108ΩΓcmの比抵抗を
有する材料を使用することができる。この材料の
具体例としては、微量不純物を添加、あるいは化
学量論比を酸素不足側にずらした金属酸化物（酸
化タンタル、酸化イツトリウム、酸化アルミニウ
ム、窒化アルミニウム、酸化亜鉛、酸化スズ等）
あるいはカーボン、窒化タンタル等の抵抗膜があ
る。 Here, the reason why the resistance value of the high resistance layer 7 is limited to the above numerical range will be described. According to experiments conducted by the present inventors, the resistance value of the high-resistance layer 7 in the film thickness direction becomes effective in suppressing dielectric breakdown from approximately 1KΩ/cm 2 , and the higher the resistance, the greater the effect. ,
On the other hand, a decrease in brightness was also observed due to the inclusion of the high-resistance layer.If the brightness of the conventional structure without the high-resistance layer is 100%, it is 90% at 4.5KΩ/ cm2.
The brightness was 80% when the brightness was 15KΩ/ cm2 .
Therefore, the practically desirable range of the resistance value of the high resistance layer 7 in the film thickness direction is 1 to 15 KΩ/cm 2 .
When the film thickness of this high-resistance layer 7 is set to 1000 Å, a material having a resistivity of 1×10 8 to 1.5×10 9 ΩΓcm is used, and when the film thickness is set to 10000 Å, a material having a resistivity of 1×10 7 to 1.5×10 8 ΩΓcm is used. can be used. Specific examples of this material include metal oxides (tantalum oxide, yttrium oxide, aluminum oxide, aluminum nitride, zinc oxide, tin oxide, etc.) with trace impurities added or whose stoichiometric ratio has been shifted to the oxygen-deficient side.
Alternatively, there is a resistive film made of carbon, tantalum nitride, or the like.
なお、上述の実施例では高抵抗層７を背面電極
６と同じ形状としたが、背面電極間のリーク電流
が多少あつても薄膜ELパネル駆動上さしつかえ
なければ、背面電極のすき間部分を除去する必要
はない。 In the above embodiment, the high-resistance layer 7 has the same shape as the back electrode 6, but if there is some leakage current between the back electrodes and there is no problem in driving the thin film EL panel, the gap between the back electrodes can be removed. There's no need.
以上説明したように、本発明の薄膜ELパネル
によれば、背面電極と絶縁層の間に高抵抗層を介
在させることにより、点欠陥による絶縁破壊発生
時の過電流を抑止できるので、大きな絶縁破壊が
起らず絶縁破壊を防止できる。また、高抵抗層は
膜厚方向の抵抗値にして１〜15KΩ／cm2を有して
いるので、輝度が損なわれることはなく、信頼性
の高い薄膜ELパネルを歩留りよく製造すること
ができ、実用上の効果は大である。
As explained above, according to the thin-film EL panel of the present invention, by interposing a high-resistance layer between the back electrode and the insulating layer, overcurrent when dielectric breakdown occurs due to point defects can be suppressed. No breakdown occurs and dielectric breakdown can be prevented. In addition, the high-resistance layer has a resistance value of 1 to 15KΩ/cm 2 in the film thickness direction, so brightness is not impaired and highly reliable thin-film EL panels can be manufactured with a high yield. , the practical effect is great.
第１図は本発明の一実施例を示す薄膜ELパネ
ルの基本構造図、第２図は従来の薄膜ELパネル
の基本構造図である。
１……ガラス基板、２……透明電極、３……第
１絶縁層、４……発光層、５……第２絶縁層、６
……背面電極、７……高抵抗層。
FIG. 1 is a basic structural diagram of a thin film EL panel showing an embodiment of the present invention, and FIG. 2 is a basic structural diagram of a conventional thin film EL panel. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Transparent electrode, 3... First insulating layer, 4... Light emitting layer, 5... Second insulating layer, 6
...Back electrode, 7...High resistance layer.
Claims (1)
縁層ではさんだ三層構造を有する薄膜ELパネル
において、前記背面電極と絶縁層との間に膜厚方
向の抵抗値にして１〜15KΩ／cm2を有する高抵抗
層を介在したことを特徴とする薄膜ELパネル。1 In a thin film EL panel having a three-layer structure in which a light emitting layer is sandwiched between a transparent electrode on a substrate and a back electrode with an insulating layer, the resistance value in the film thickness direction between the back electrode and the insulating layer is 1 to 15 KΩ/ 1. A thin film EL panel characterized by having a high resistance layer having a resistance of 2 cm2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60235399A JPS6297296A (en) | 1985-10-23 | 1985-10-23 | Thin film el panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60235399A JPS6297296A (en) | 1985-10-23 | 1985-10-23 | Thin film el panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6297296A JPS6297296A (en) | 1987-05-06 |
| JPH0550837B2 true JPH0550837B2 (en) | 1993-07-30 |
Family
ID=16985511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60235399A Granted JPS6297296A (en) | 1985-10-23 | 1985-10-23 | Thin film el panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6297296A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5885798U (en) * | 1981-12-07 | 1983-06-10 | カルソニックカンセイ株式会社 | electroluminescent element |
| JPS6261295A (en) * | 1985-09-11 | 1987-03-17 | 沖電気工業株式会社 | Thin film el element and manufacturing thereof |
-
1985
- 1985-10-23 JP JP60235399A patent/JPS6297296A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6297296A (en) | 1987-05-06 |
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