JPH0552666B2 - - Google Patents
Info
- Publication number
- JPH0552666B2 JPH0552666B2 JP58220925A JP22092583A JPH0552666B2 JP H0552666 B2 JPH0552666 B2 JP H0552666B2 JP 58220925 A JP58220925 A JP 58220925A JP 22092583 A JP22092583 A JP 22092583A JP H0552666 B2 JPH0552666 B2 JP H0552666B2
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- metal
- bump
- plating
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
Landscapes
- Electroplating Methods And Accessories (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】 〔技術分野〕 本発明は、バンプ電極の製造方法に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a method for manufacturing bump electrodes.
従来のバンブ電極構造及びその形成方法は、
Solid state technology、April 1980年版の様に
液状レジストを使用した場合、キノコ状のバンプ
形状、すなわち熱圧着ボンデイング時のバンプ電
極上方からの圧力に対し、不安定な構造となつて
いる。更にバンプ電極の微細化に伴い、その機械
的強度の低下が問題となつている。
The conventional bump electrode structure and its formation method are as follows:
When solid state technology is used, such as in the April 1980 version, when a liquid resist is used, the bump shape is mushroom-shaped, that is, the structure is unstable against pressure from above the bump electrode during thermocompression bonding. Furthermore, with the miniaturization of bump electrodes, a decrease in their mechanical strength has become a problem.
本発明はこのような問題点を解決するもので、
その目的とするところは、バンプ電極の首部を頭
部よりも広くすることで、バンプ電極の機械的強
度を向上させることにある。
The present invention solves these problems,
The purpose is to improve the mechanical strength of the bump electrode by making the neck of the bump electrode wider than the head.
本発明のバンプ電極構造及びその形成法は、バ
ンプ下金属の部分的なエツチング又は選択的な形
成により、電着バンプ成長時に、通電電着可能と
なるバンプ下金属の島を設け、バンプ形成時にバ
ンプの首部を頭部よりも広くとることで、バンプ
電極の機械的強度を向上させることである。
The bump electrode structure and the method for forming the same of the present invention provide an island of the metal under the bump that can be electrodeposited with electricity during the growth of the electrodeposited bump by partially etching or selectively forming the metal under the bump. By making the neck of the bump wider than the head, the mechanical strength of the bump electrode is improved.
以下、本発明について、実施例に基づき詳細に
説明する。
Hereinafter, the present invention will be described in detail based on examples.
一実施例は、バンプ下金属膜をフオトリソグラ
フイ工程を用いたエツチング又はリフトオフ法等
により、例えば第２，３図中ｃ，ｄの様なバンプ
形成の為の共通通電部分と、ｅの様な前記通電部
分と電気的に隔離していて且つメツキ成長中のバ
ンプと通電可能となる島状構造をもたせる。次に
フオトリンソラフイ工程を用い、第２，３図中ｄ
等のバンプ形成を行わない部分をレジスト等で覆
い、バンプを形成させる。第４図にバンプ形成の
為のレジスト被覆例を示す。バンプ成長は第４図
中ｃ部分を中心に広がり、これが第４図中ｅ部分
に到着する。 In one embodiment, the metal film under the bump is formed by etching or lift-off using a photolithography process, for example, to form a common conductive portion for forming bumps as shown in c and d in FIGS. 2 and 3, and as shown in e. An island-like structure is provided that is electrically isolated from the current-carrying portion and that can be electrically connected to the bump during plating growth. Next, using the photorin solafy process, d in Figures 2 and 3
The portions where bumps are not to be formed are covered with a resist or the like to form bumps. FIG. 4 shows an example of resist coating for forming bumps. The bump growth spreads around part c in FIG. 4 and reaches part e in FIG.
しかる後はｅ部分はｃ部分と同電位となり第５
図に示す様なバンプ形状となる。 After that, part e becomes the same potential as part c, and the fifth
The bump shape will be as shown in the figure.
次に不要なバンプ下金属膜ｄをエツチング技術
を用て除去する。第５図は本発明により形成した
最終のバンプ電極構造を示す。 Next, the unnecessary under-bump metal film d is removed using etching technology. FIG. 5 shows the final bump electrode structure formed according to the present invention.
以上述べた様に本発明によれば、メツチ時の通
電部分、即ちメツキ電極となる部分の周辺部に離
間した島状の金属膜を設けます。まずメツキ電極
を中心にメツキ金属が成長します。この時点で
は、島状の金属膜は通電されませんのでメツキは
成長しません。ある程度メツキ成長するとメツキ
金属がメツキ電極から離間した島状の金属膜に到
達する。これによりこの島状の金属膜がメツキ電
極と導通することによりこの島状の金属膜を中心
にメツキ金属が成長します。その結果、従来の構
造に比べ２倍以上機械的強度に優れた台形状のバ
ンプ電極を形成することが可能となるという効果
を有する。また本発明は、工程を増やすことなく
バンプ電極を形成することができるので、機械的
強度を信頼性高く向上させることが可能となると
いう効果も有するものである。
As described above, according to the present invention, spaced apart island-shaped metal films are provided around the energized part during mating, that is, the part that becomes the plating electrode. First, plating metal grows around the plating electrode. At this point, the island-like metal film is not energized, so no plating will grow. After plating has grown to a certain extent, the plating metal reaches an island-shaped metal film spaced apart from the plating electrode. As a result, this island-shaped metal film is electrically connected to the plating electrode, and the plating metal grows around this island-shaped metal film. As a result, it is possible to form a trapezoidal bump electrode that has twice the mechanical strength as compared to the conventional structure. Further, the present invention has the effect that since bump electrodes can be formed without increasing the number of steps, mechanical strength can be improved with high reliability.
バンプ下金属膜ｃとｅの距離はバンプの高さ及
びバンプ間ピツチを考慮した上で、自由ぬ設定で
きる。
The distance between the metal films c and e under the bumps can be freely set by considering the height of the bumps and the pitch between the bumps.
第１図は、液状フオトレジストを用いた場合の
従来のバンプ電極構造。第２図は、バンプ下金属
膜の選択的形成例。第３図は、第２図に於ける電
極の断面構造。第４図は、バンプ電極形成の為の
レジスト被覆例。第５図は、最終バンプ電極構
造。
ａ……AL等のパツド電極、ｂ……SiO2ガラス
等の保護膜、ｃ，ｄ，ｅ……バンプ下金属膜、ｆ
……メツキされたバンプ、ｇ……メツキ保護用フ
オトレジスト層。
Figure 1 shows a conventional bump electrode structure using liquid photoresist. FIG. 2 is an example of selective formation of a metal film under the bump. FIG. 3 shows the cross-sectional structure of the electrode in FIG. 2. FIG. 4 is an example of resist coating for forming bump electrodes. Figure 5 shows the final bump electrode structure. a... Padded electrode such as AL, b... Protective film such as SiO 2 glass, c, d, e... Metal film under bump, f
...Plated bump, g...Photoresist layer for protecting the plating.
Claims (1)
板に延在する絶縁膜に被覆されたパツド電極の露
出部と電気的に接続された第１金属膜を有し、前
記第１金属膜の周辺部に離間して設けられ、且つ
前記パツド電極と電気的に絶縁した島状の第２金
属膜とを形成する工程、前記第１金属膜をメツキ
成長時の通電部として前記第１金属膜を中心とし
て前記第２金属膜方向にメツキ金属を成長させる
工程、前記メツキ金属を前記第２金属膜と電気的
に接続するまで成長させることにより、前記第２
金属膜表面に前記メツキ金属が延在して形成し、
前記メツキ金属の断面形状を上辺に比べて底辺が
長い台形状とする工程を有することを特徴とする
バンプ電極の製造方法。1. A first metal film provided on a semiconductor substrate and electrically connected to an exposed portion of a pad electrode partially covered with an insulating film extending on the semiconductor substrate, the periphery of the first metal film forming an island-shaped second metal film spaced apart from the pad electrode and electrically insulated from the pad electrode; using the first metal film as a current-carrying part during plating growth; a step of growing a plating metal centered in the direction of the second metal film, growing the plating metal until it is electrically connected to the second metal film;
The plated metal is formed to extend on the surface of the metal film,
A method for manufacturing a bump electrode, comprising the step of making the cross-sectional shape of the plating metal into a trapezoidal shape with a base longer than an upper side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58220925A JPS60113446A (en) | 1983-11-24 | 1983-11-24 | Bump electrode structure and formation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58220925A JPS60113446A (en) | 1983-11-24 | 1983-11-24 | Bump electrode structure and formation thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60113446A JPS60113446A (en) | 1985-06-19 |
| JPH0552666B2 true JPH0552666B2 (en) | 1993-08-06 |
Family
ID=16758697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58220925A Granted JPS60113446A (en) | 1983-11-24 | 1983-11-24 | Bump electrode structure and formation thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60113446A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62252951A (en) * | 1986-04-22 | 1987-11-04 | Oki Electric Ind Co Ltd | Manufacture of bump electrode |
| JP2633586B2 (en) * | 1987-10-21 | 1997-07-23 | 株式会社東芝 | Semiconductor device having bump structure |
-
1983
- 1983-11-24 JP JP58220925A patent/JPS60113446A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60113446A (en) | 1985-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0291014B1 (en) | Semiconductor device in which wiring layer is formed below bonding pad | |
| US4505029A (en) | Semiconductor device with built-up low resistance contact | |
| US5403777A (en) | Semiconductor bond pad structure and method | |
| JPH0513418A (en) | Semiconductor device and manufacturing method thereof | |
| JPH0552666B2 (en) | ||
| JPH118264A (en) | Semiconductor device and manufacturing method thereof | |
| JPH06224200A (en) | Integrated semiconductor device and method of forming bump structure on integrated semiconductor device | |
| JPH0714028B2 (en) | Method for manufacturing three-dimensional semiconductor device | |
| JPS60136338A (en) | Semiconductor device | |
| JP3116469B2 (en) | Method of forming bump type electrode and method of manufacturing semiconductor device | |
| JPH03101233A (en) | Electrode structure and its manufacture | |
| JPH0244145B2 (en) | ||
| JPH065609A (en) | Bump forming method | |
| JPH05299420A (en) | Semiconductor device | |
| JP2773762B2 (en) | Method for manufacturing semiconductor device | |
| JPS63175446A (en) | Manufacture of bump electrode | |
| JP2600161B2 (en) | Substrate for transfer bump | |
| JPH0562977A (en) | Bump electrode of integrated circuit device | |
| KR200198274Y1 (en) | Bump in semiconductor device | |
| JPS5823940B2 (en) | Electrode formation method for semiconductor devices | |
| KR940011740B1 (en) | Structure and procedure for design alteration of bond-pad of semiconductor device | |
| JPH05243323A (en) | Semiconductor device and manufacturing method | |
| JPS61202444A (en) | Manufacture of semiconductor device | |
| JPH0462459B2 (en) | ||
| JPH05136198A (en) | Semiconductor device |