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JPH0552840B2 - - Google Patents
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JPH0552840B2 - - Google Patents

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Publication number
JPH0552840B2
JPH0552840B2 JP63254508A JP25450888A JPH0552840B2 JP H0552840 B2 JPH0552840 B2 JP H0552840B2 JP 63254508 A JP63254508 A JP 63254508A JP 25450888 A JP25450888 A JP 25450888A JP H0552840 B2 JPH0552840 B2 JP H0552840B2
Authority
JP
Japan
Prior art keywords
transition metal
platinum
silicon
group
nmr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63254508A
Other languages
Japanese (ja)
Other versions
JPH02794A (en
Inventor
Hiroshi Yamashita
Teruyuki Hayashi
Masato Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP63254508A priority Critical patent/JPH02794A/en
Publication of JPH02794A publication Critical patent/JPH02794A/en
Publication of JPH0552840B2 publication Critical patent/JPH0552840B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳现な説明】 〔産業䞊の利甚分野〕 本発明は、ケむ玠−遷移金属結合を有するニツ
ケル族遷移金属錯䜓を補造する方法に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing a nickel group transition metal complex having a silicon-transition metal bond.

ケむ玠−遷移金属結合を有する錯䜓は、化孊気
盞反応や蒞着によ぀お、デバむスに䜿われる遷移
金属シリサむドを補造する原料ずしお、甚いられ
おいる。
Complexes having silicon-transition metal bonds are used as raw materials for producing transition metal silicides used in devices by chemical vapor phase reactions or vapor deposition.

〔埓来技術及びその問題点〕[Prior art and its problems]

埓来、ケむ玠−遷移金属結合を有する錯䜓は、
以䞋のような方法で補造されおいた。
Conventionally, complexes with silicon-transition metal bonds are
It was manufactured in the following way.

(1) ハロシランず遷移金属アニオンの反応。(1) Reaction between halosilane and transition metal anion.

(2) シリルアルカリ金属ず遷移金属ハロゲン化物
の反応。
(2) Reaction between silyl alkali metal and transition metal halide.

(3) シリル氎銀ず遷移金属錯䜓の反応。(3) Reaction of silylmercury and transition metal complexes.

(4) ヒドロシランの䜎原子䟡遷移金属錯䜓ぞの酞
化的付加。
(4) Oxidative addition of hydrosilane to low-valent transition metal complexes.

(5) ヒドロシランず遷移金属ハロゲン化物からの
脱ハロゲン化氎玠反応。
(5) Dehydrohalogenation reaction between hydrosilane and transition metal halide.

しかしながら、前蚘方法では、それぞれに問題
点があり、(1)の方法では、遷移金属成分がアニオ
ンを圢成するものでなければならず、そのため遷
移金属ず配䜍子の皮類・構造が限定される。(2)の
方法では、アリカリ金属を䜿甚するため、操䜜䞊
の危険が䌎い、たた、アルカリ金属ず反応し埗る
眮換基を有するシリル遷移金属錯䜓は、原理的に
補造できない。(3)の方法では、シリル氎銀補造の
段階でアルカリ金属を䜿甚する䞊に、毒性の高い
氎銀を䜿甚するため、その工業的利甚は、著しく
制玄される。たたケむ玠䞊の眮換基もメチル基に
限定される。(4)の方法では、皮々のケむ玠−遷移
金属錯䜓を補造できるが、通垞入手容易なハロシ
ランを、高䟡な氎玠化アルミニりムリチりムなど
で還元し、ヒドロシランずしおから反応に䟛する
必芁があり、工皋が耇雑である。たた、(5)の方法
も、ヒドロシランを甚いるため、(4)ず同様の問題
点を有する䞊に、塩基共存䞋で反応を行うため、
塩基ず反応し埗る眮換基を有するシリル遷移金属
錯䜓は、原理的に補造できない。たた、ケむ玠䞊
の眮換基や配䜍子の皮類も特定のものに限定され
る。
However, each of the above methods has its own problems. In method (1), the transition metal component must form an anion, which limits the types and structures of the transition metal and the ligand. . In method (2), since an alkali metal is used, there are operational risks, and a silyl transition metal complex having a substituent that can react with an alkali metal cannot be produced in principle. In method (3), not only an alkali metal is used in the step of producing silylmercury, but also highly toxic mercury is used, so its industrial use is severely restricted. Substituents on silicon are also limited to methyl groups. Method (4) allows the production of various silicon-transition metal complexes, but the process is complicated because it requires reducing the usually easily available halosilane with expensive lithium aluminum hydride to form hydrosilane and then subjecting it to the reaction. It is. In addition, since method (5) uses hydrosilane, it has the same problems as (4), and also because the reaction is carried out in the presence of a base.
A silyl transition metal complex having a substituent that can react with a base cannot be produced in principle. Furthermore, the types of substituents and ligands on silicon are also limited to specific ones.

本発明者らは、これらの問題点を解決するべく
鋭意研究を重ねた結果、ハロシランが䜎原子䟡金
属錯䜓ず容易に反応する事実を芋出し、本発明に
到達した。
The present inventors have conducted extensive research to solve these problems, and as a result, have discovered that halosilane easily reacts with low-valent metal complexes, and have arrived at the present invention.

〔発明の課題〕[Problem of invention]

本発明は、ケむ玠−遷移金属結合を生成させる
ための党く新芏な方法を開発し、ケむ玠−遷移金
属結合を有する錯䜓を提䟛しようずするものであ
る。
The present invention seeks to develop a completely new method for producing silicon-transition metal bonds and to provide complexes having silicon-transition metal bonds.

〔課題を解決するための手段〕[Means to solve the problem]

本発明者らは、前蚘目的を達成すべく鋭意研究
を重ねた結果、ケむ玠−ハロゲン原子結合を有す
るケむ玠化合物に、特定のニツケル族金属錯䜓を
反応させるこずにより、ケむ玠−遷移金属結合を
有する化合物が埗られるこずを芋出し、本発明を
完成するに到぀た。
As a result of intensive research to achieve the above object, the present inventors have discovered that by reacting a specific nickel group metal complex with a silicon compound having a silicon-halogen atom bond, a compound having a silicon-transition metal bond can be produced. The present inventors have discovered that the following can be obtained, and have completed the present invention.

すなわち、本発明によれば、ケむ玠−ハロゲン
原子結合を有するケむ玠化合物に、少なくずも
分子のホスフむンを配䜍した䟡のニツケル族遷
移金属錯䜓を反応させるこずを特城ずするSi−
ニツケル族遷移金属結合を有するニツケ
ル族遷移金属錯䜓の補造方法が䟛絊される。
That is, according to the present invention, a silicon compound having a silicon-halogen atom bond has at least two
Si-M characterized by reacting a zero-valent nickel group transition metal complex coordinated with molecular phosphine
A method for producing a nickel group transition metal complex having a (M: nickel group transition metal) bond is provided.

本発明における反応は次の匏で衚わされる。 The reaction in the present invention is represented by the following formula.

前蚘匏䞭、はニツケル族遷移金属、はハロ
ゲン原子、はホスフむン、L′はホスフむン以倖
のたたは電子絊䞎配䜍子、は以䞊の敎
数、n′は、たたはを瀺す。、L′は配䜍結
合性のため、MLnL′n′の圢匏酞化数はである。
たた、ずずの結合及びずSiずの結合は共有
結合であるため、 の圢匏酞化数はである。
In the above formula, M is a nickel group transition metal, X is a halogen atom, L is phosphine, L' is a 2- or 4-electron-bearing ligand other than phosphine, n is an integer of 2 or more, and n' is 0, 1 or 2. shows. Since L and L' are coordinate bonds, the formal oxidation number of MLnL'n' is 0.
In addition, since the bond between M and X and the bond between M and Si are covalent bonds, The formal oxidation number of is 2.

本発明で甚いるケむ玠化合物は、少くずも個
のSi−ハロゲン原子結合を有するもの
であり、䟋えば、次の䞀般匏で衚わすものを甚い
るこずができる。
The silicon compound used in the present invention has at least one Si-X (X: halogen atom) bond, and for example, those represented by the following general formula can be used.

前蚘匏䞭、R1、R2及びR3は、アルキル基、シ
クロアルキル基、アリヌル基、アラルキル基、ア
ルケニル基、アルキニル基、アルコキシ基、シク
ロアルコキシ基、アリヌロキシ基、アラルキロキ
シ基、アルケニロキシ基、アルキニロキシ基、シ
リル基又はハロゲン原子を衚わす。はハロゲン
原子を衚わす。
In the above formula, R 1 , R 2 and R 3 are an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an aralkyloxy group, an alkenyloxy group, and an alkynyloxy group. group, silyl group, or halogen atom. X represents a halogen atom.

本発明の方法に甚いるケむ玠化合物を䟋瀺すれ
ば、四塩化ケむ玠、メチルトリクロロシラン、ゞ
メチルゞクロロシラン、トリメチルブロモシラ
ン、ゞメチルプニルブロモシラン、メチルゞフ
゚ニルブロモシラン、ベンゞルゞメチルブロモシ
ラン、トリメチルペヌドシラン、ビニルゞメチル
クロロシラン、ペヌドペンタメチルゞシランなど
をあげるこずができる。
Examples of silicon compounds used in the method of the present invention include silicon tetrachloride, methyltrichlorosilane, dimethyldichlorosilane, trimethylbromosilane, dimethylphenylbromosilane, methyldiphenylbromosilane, benzyldimethylbromosilane, trimethyliodosilane, Examples include vinyldimethylchlorosilane and iodopentamethyldisilane.

本発明の方法に甚いる䟡のニツケル族遷移金
属錯䜓は、ニツケル、パラゞりム、癜金の錯䜓で
あり、錯䜓を構成する配䜍子は、有機基で眮換さ
れたホスフむン類だけでもよいが、これらホスフ
むン類に加えお、オレフむン、ゞ゚ン、䞀酞化炭
玠などのたたは電子絊䞎配䜍子があ぀おもよ
い。
The zero-valent nickel group transition metal complex used in the method of the present invention is a complex of nickel, palladium, and platinum, and the ligand constituting the complex may be only phosphines substituted with an organic group, but these phosphines In addition to the above, there may also be two- or four-electron donating ligands such as olefins, dienes, carbon monoxide, etc.

前蚘ホスフむン類を䟋瀺すれば、トリメチルホ
スフむン、トリ゚チルホスフむン、トリブチルホ
スフむン、ゞメチルプニルホスフむン、゚チル
ゞプニルホスフむン、トリプニルホスフむン
などがあげられる。埓぀お、前蚘䟡遷移金属錯
䜓を䟋瀺すれば、テトラキストリ゚チルホスフ
むン癜金、トリストリ゚チルホスフむン癜
金、テトラキストリメチルホスフむン癜金、
ビストリ゚チルホスフむンゞカルボニル癜
金、ビストリ゚チルホスフむン゚チレン癜
金、テトラキストリメチルホスフむンパラゞ
りム、テトラキストリ゚チルホスフむンパラ
ゞりム、テトラキストリプニルホスフむン
ニツケルなどがあげられる。
Examples of the phosphines include trimethylphosphine, triethylphosphine, tributylphosphine, dimethylphenylphosphine, ethyldiphenylphosphine, and triphenylphosphine. Therefore, examples of the zero-valent transition metal complexes include tetrakis(triethylphosphine)platinum, tris(triethylphosphine)platinum, tetrakis(trimethylphosphine)platinum,
Bis(triethylphosphine)dicarbonylplatinum, bis(triethylphosphine)ethyleneplatinum, tetrakis(trimethylphosphine)palladium, tetrakis(triethylphosphine)palladium, tetrakis(triphenylphosphine)
Examples include nickel.

これら䟡ニツケル族遷移金属錯䜓は錯䜓ずし
お仕蟌む方法ばかりでなく、前蚘ホスフむン配䜍
子の共存䞋でこれら錯䜓を䞎えるテトラカルボニ
ルニツケル、ビスゞベンゞリデンアセトンパ
ラゞりム、ビス−シクロオクタゞ゚ン
癜金などの䟡ニツケル族遷移金属錯䜓ず前蚘ホ
スフむン配䜍子ずを、それぞれ反応系䞭に加える
方法によ぀おも、本反応に䟛するこずができる。
These zero-valent nickel group transition metal complexes can be prepared not only as complexes, but also in the presence of the phosphine ligand, such as tetracarbonyl nickel, bis(dibenzylideneacetone)palladium, and bis(1,5-cyclooctane). Dien)
This reaction can also be carried out by adding a zero-valent nickel group transition metal complex such as platinum and the phosphine ligand to the reaction system.

反応に䟛されるケむ玠化合物の䟡ニツケル族
遷移金属錯䜓に察するモル比は、任意に遞ぶこず
ができるが、䟡ニツケル族遷移金属錯䜓に関す
る収率を考慮すれば、以䞊が奜たしい。
The molar ratio of the silicon compound to be subjected to the reaction to the zero-valent nickel group transition metal complex can be arbitrarily selected, but in consideration of the yield regarding the zero-valent nickel group transition metal complex, it is preferably 1 or more.

本発明は、−80℃〜300℃、奜たしくは、℃〜
200℃の反応枩床においお実斜される。
The present invention can be carried out from -80°C to 300°C, preferably from 0°C to
It is carried out at a reaction temperature of 200°C.

本発明の方法は、溶媒の有無にかかわらず実斜
できるが、溶媒を甚いる堎合は、アルコヌル、第
玚たたは第玚アミン、カルボン酞などの、原
料ずしお甚いるケむ玠化合物たたは䟡ニツケル
族遷移金属錯䜓ず反応し埗るものを陀いお、通垞
甚いられる溶媒、すなわち、ベンれン、トル゚
ン、キシレン、ヘキサン、デカリンなどの炭化氎
玠溶媒を甚いるこずができる。
The method of the present invention can be carried out with or without a solvent, but when a solvent is used, silicon compounds or zero-valent nickel group transition metals used as raw materials such as alcohols, primary or secondary amines, carboxylic acids, etc. Commonly used solvents, ie, hydrocarbon solvents such as benzene, toluene, xylene, hexane, decalin, etc., can be used, except for those that can react with the complex.

反応混合物からの生成物の分離粟補は、䞀般的
には過剰のケむ玠化合物を留去埌、再結晶するこ
ずにより容易に達せられる。
Separation and purification of the product from the reaction mixture is generally easily accomplished by distilling off excess silicon compounds and then recrystallizing the product.

〔発明の効果〕〔Effect of the invention〕

本発明により、ハロゲン原子を有する広範なケ
む玠化合物を盎接遷移金属錯䜓ず反応させるこず
により、極めお容易にケむ玠−遷移金属結合を有
する皮々の錯䜓が提䟛される。
According to the present invention, various complexes having a silicon-transition metal bond can be provided very easily by directly reacting a wide variety of silicon compounds having a halogen atom with a transition metal complex.

〔実斜䟋〕〔Example〕

本発明を実斜䟋により曎に詳しく説明する。 The present invention will be explained in more detail with reference to Examples.

実斜䟋  トリストリ゚チルホスフむン癜金0.43
mol、トリメチルブロモシラン圓量をベンれン
0.9ml䞭、90℃で時間加熱するこずにtrans−ト
リメチルシリルブロモビストリ゚チルホス
フむン癜金が埗られた。。NMRから収率は93
であ぀た。反応液を濃瞮し、ペンタンから再結
晶するず、39の収率で淡黄色針状結晶が埗られ
た。このものは文献に未収茉の新芏化合物であ
り、その物性倀、スペクトルデヌタなどは、以䞋
のずおりであ぀た。
Example 1 Tris(triethylphosphine) platinum 0.43m
mol, 4 equivalents of trimethylbromosilane in benzene
Trans-trimethylsilyl(bromo)bis(triethylphosphine)platinum was obtained by heating in 0.9ml at 90°C for 4 hours. . Yield from NMR is 93
It was %. The reaction solution was concentrated and recrystallized from pentane to obtain pale yellow needle crystals with a yield of 39%. This compound is a new compound that has not been described in any literature, and its physical properties, spectrum data, etc. are as follows.

融点58〜60℃、IR1236、1038、840、768、
742、618cm-1、1H−NMRΎ2.56〜1.8412H、
、1.45〜1.0218H、、0.83、0.69、0.55
9H、各々、195Pt−Si−
−1H25.2Hzppm. 元玠分析倀 C15H39BrP2PtSi 蚈算倀 30.82、6.73 実枬倀 30.80、6.80 実斜䟋  テトラキストリ゚チルホスフむン癜金0.14
mol、トリメチルブロモシラン3.8圓量をベン
れン0.3ml䞭、90℃で19.5時間加熱埌、実斜䟋
ず同様に凊理した。trans−トレメチルシリル
ブロモビストリ゚チルホスフむン癜金の
収率は90であ぀た。
Melting point: 58-60℃, IR: 1236, 1038, 840, 768,
742, 618 cm -1 , 1 H-NMR: ÎŽ2.56 ~ 1.84 (12H,
m), 1.45-1.02 (18H, m), 0.83, 0.69, 0.55
(1:4:1) (9H, respectively s, J ( 195 Pt-Si-
C- 1 H) = 25.2Hz) ppm. Elemental analysis value C 15 H 39 BrP 2 PtSi Calculated value C; 30.82%, H;, 6.73% Actual value C; 30.80%, H;, 6.80% Example 2 Tetrakis ( triethylphosphine) platinum 0.14
Example 1 After heating 3.8 mmol of trimethylbromosilane in 0.3 ml of benzene at 90°C for 19.5 hours.
processed in the same way. The yield of trans-tremethylsilyl(bromo)bis(triethylphosphine)platinum was 90%.

実斜䟋  トリストリ゚チルホスフむン癜金0.17
mol、トリメチルペヌドシラン3.7圓量をベンれ
ン0.3ml䞭、90℃で時間加熱するこずにより、
1H−NMRでは、ほが定量的に、トリメチルシリ
ルペヌドビストリ゚チルホスフむン癜金
が埗られた。反応液を濃瞮しお埗らえる固䜓をペ
ンタンから再結晶しお淡黄色針状結晶を埗た。こ
のものは文献に未収茉の新芏化合物であり、その
物性倀、スペクトルデヌタなどでは以䞋のずおり
であ぀た。
Example 3 Tris(triethylphosphine) platinum 0.17m
mol, by heating 3.7 equivalents of trimethyliodosilane in 0.3 ml of benzene at 90°C for 1 hour.
According to 1 H-NMR, trimethylsilyl(iodo)bis(triethylphosphine)platinum was obtained almost quantitatively. The solid obtained by concentrating the reaction solution was recrystallized from pentane to obtain pale yellow needle crystals. This compound is a new compound that has not been described in any literature, and its physical properties, spectrum data, etc. are as follows.

融点79〜80℃、IR1234、1038、838、760、
720、618cm-1、1H−NMRΎ2.61−1.9812H、
、1.47−0.9718H、、0.78、0.65、0.52
9H、各々、195Pt−Si−
C-1H23.4Hzppm 実斜䟋  テトラキストリメチルホスフむン癜金0.30
mol、トリメチルブロモシラン3.8圓量をベン
れン0.4ml䞭、120℃で18時間加熱するこずにより
1H−NMRでは50の収率で、トリメチルシリル
ブロモビストリメチルホスフむン癜金が
埗られた。反応液を濃瞮し、ベンれンで抜出した
埌、ベンれン溶液にペンタンを加えるこずにより
淡黄色固䜓を埗た。このものは文献に未収茉の新
芏化合物であり、そのスペクトルデヌタは以䞋の
ずおりであ぀た。1 H−NMRΎ1.4118H、br 、0.78、0.63、
0.489H、各々、195Pt−Si
−C-1H27.0Hzppm 実斜䟋  テトラキストリメチルホスフむン癜金0.23
mol、トリメチルペヌドシラン3.5圓量をベン
れン0.3ml䞭、90℃で時間加熱するこずにより、
1H−NMRでは90の収率で、トリメチルシリル
ペヌドビストリメチルホスフむン癜金が
埗られた。反応液を濃瞮し、ベンれンで抜出した
埌、ベンれン溶液を濃瞮するこずにより淡黄色固
䜓を埗た。このものは文献に未収茉の新芏化合物
であり、そのスペクトルデヌタは以䞋のずおりで
あ぀た。1 H−NMRΎ1.6318H、br 、0.76、0.61、
0.469H、各々、195Pt−Si
−C-1H27.0Hz31 P−NMR−15.8ppm31P−195Pt2791
Hz 実斜䟋  テトラキスゞメチルプニルホスフむン癜
金0.08mol、トリメチルペヌドシラン3.3圓量を
ベンれン0.25ml䞭、120℃で13時間加熱するこず
により、1H−NMRでは78の収率でトリメチル
シリルペヌドビスゞメチルプニルホスフ
むン癜金が埗られた。反応液を濃瞮し、ベンれ
ン−ペンタンで抜出した埌、
抜出液を濃瞮するこずにより淡黄色固䜓を埗た。
このものは、文献に未収茉の新芏化合物であり、
そのスペクトルデヌタは以䞋のずおりであ぀た。1 H−NMRΎ8.02−7.1910H、、1.9012H、
br 、0.46、0.33、0.209H、
各々、195Pt−Si−C-1H23.4Hz 実斜䟋  トリストリ゚チルホスフむン癜金0.19
mol、ゞメチルプニルブロモシラン3.0圓量を
ベンれン0.30ml䞭、90℃で時間加熱すこずによ
り1H−NMRでは77の収率で、ゞメチルプニ
ルシリルブロモビストリメチルホスフむ
ン癜金が埗られた。反応液を濃瞮し、ペンタン
で抜出した埌、ペンタン溶液を冷华するこずによ
り淡黄色固䜓を埗た。このものは、文献に未収茉
の新芏化合物であり、そのスペクトルデヌタは以
䞋のずおりであ぀た。1 H−NMRΎ8.10−7.365H、、2.30−1.68
12H、1.45−1.0118H、、0.99、0.84、
0.696H、各々、195Pt−Si
−C-1H27.0Hz 実斜䟋  トリストリ゚チルホスフむン癜金0.75
mol、メチルトリクロロシラン8.5圓量をベンれ
ン0.25ml䞭、90℃で15分間加熱すこずにより、1H
−NMRでは、ほが定量的にゞクロロメチルシリ
ルクロロビストリメチルホスフむン癜金
が埗られた。反応液を濃瞮するこずによりこずに
より無色高粘性液䜓を埗た。このものは、文献に
未収茉の新芏化合物であり、その物性倀、スペク
トルデヌタなどは以䞋のずおりであ぀た。1 H−NMRΎ2.48−1.9612H、、1.39−0.97
18H、1.47、1.38、1.29
3H、各々、195Pt−Si−C-1H16.2Hz31 P−NMR19.0ppm31P−195Pt2512Hz 実斜䟋  トリストリ゚チルホスフむン癜金0.06
md、ゞクロロゞメチルシラン圓量を、ベンれ
ン0.2ml䞭、120℃で時間加熱すこずにより1H
−NMRでは90℃の収率でゞクロロゞメチルシリ
ルクロロビストリメチルホスフむン癜金
が埗られた。反応液を濃瞮するこずにより、淡黄
色高粘性液䜓を埗た。このものは文献に未収茉の
新芏化合物であり、その物性倀、スペクトルデヌ
タなどは以䞋のずおりであ぀た。1 H−NMRΎ2.37−1.7212H、、1.31−0.79
18H、1.09、0.97、0.85
6H、各々、195Pt−Si−C-1H21.6Hz31 P−NMR19.2ppm31P−195Pt2700Hz 実斜䟋 10 トリストリ゚チルホスフむン癜金0.38
md、ペヌドペンタメチルゞシラン2.5圓量を、ベ
ンれン0.2ml䞭、90℃で10分間加熱すこずにより、
90の収率でペンタメチルゞシリルペヌドビ
ストリメチルホスフむン癜金が埗られた。反
応液を濃瞮し、ベンれン−ペンタン
で抜出した埌、抜出溶液を濃瞮するこず
により、淡黄色固䜓を埗た。このものは文献に未
収茉の新芏化合物であり、そのスペクトルデヌタ
は以䞋のずおりであ぀た。1 H−NMRΎ2.62−2.1012H、、1.47−0.99
18H、0.90、0.71、0.52
6H、各々、195Pt−Si−C-1H34.2
Hz、0.459H、。
Melting point: 79-80℃, IR: 1234, 1038, 838, 760,
720, 618 cm -1 , 1 H−NMR: ή2.61−1.98 (12H,
m), 1.47−0.97 (18H, m), 0.78, 0.65, 0.52
(1:4:1) (9H, respectively s, J ( 195 Pt-Si-
C -1 H)=23.4Hz)ppm Example 4 Tetrakis(trimethylphosphine)platinum 0.30
mmol, by heating 3.8 equivalents of trimethylbromosilane in 0.4 ml of benzene at 120°C for 18 hours.
According to 1 H-NMR, trimethylsilyl(bromo)bis(trimethylphosphine)platinum was obtained with a yield of 50%. The reaction solution was concentrated and extracted with benzene, and then pentane was added to the benzene solution to obtain a pale yellow solid. This compound is a new compound that has not been described in any literature, and its spectral data are as follows. 1H -NMR: ÎŽ1.41 (18H, br s), 0.78, 0.63,
0.48 (1:4:1) (9H, respectively s, J ( 195 Pt-Si
-C -1 H) = 27.0Hz) ppm Example 5 Tetrakis(trimethylphosphine)platinum 0.23
By heating 3.5 mmol of trimethyliodosilane in 0.3 ml of benzene at 90°C for 1 hour,
According to 1 H-NMR, trimethylsilyl(iodo)bis(trimethylphosphine)platinum was obtained with a yield of 90%. After concentrating the reaction solution and extracting with benzene, a pale yellow solid was obtained by concentrating the benzene solution. This compound is a new compound that has not been described in any literature, and its spectral data are as follows. 1H -NMR: ÎŽ1.63 (18H, br s), 0.76, 0.61,
0.46 (1:4:1) (9H, respectively s, J ( 195 Pt-Si
-C -1 H) = 27.0Hz) 31 P-NMR: -15.8ppm (J( 31 P- 195 Pt) = 2791
Hz) Example 6 By heating 0.08 mmol of tetrakis(dimethylphenylphosphine)platinum and 3.3 equivalents of trimethyliodosilane in 0.25 ml of benzene at 120°C for 13 hours, trimethylsilyl was produced with a yield of 78% according to 1 H-NMR. (Iodo)bis(dimethylphenylphosphine)platinum was obtained. After concentrating the reaction solution and extracting with benzene-pentane (v/v=1:1),
A pale yellow solid was obtained by concentrating the extract.
This is a new compound that has not been described in the literature.
The spectrum data was as follows. 1H -NMR: ÎŽ8.02-7.19 (10H, m), 1.90 (12H,
br s), 0.46, 0.33, 0.20 (1:4:1) (9H,
s, J ( 195 Pt-Si-C -1 H) = 23.4 Hz) Example 7 Tris (triethylphosphine) platinum 0.19 m
By heating 3.0 equivalents of dimethylphenylbromosilane in 0.30 ml of benzene at 90°C for 2 hours, dimethylphenylsilyl(bromo)bis(trimethylphosphine)platinum was obtained with a yield of 77% by 1 H-NMR. was gotten. After concentrating the reaction solution and extracting with pentane, a pale yellow solid was obtained by cooling the pentane solution. This compound is a new compound that has not been described in any literature, and its spectral data are as follows. 1H -NMR: Ύ8.10-7.36 (5H, m), 2.30-1.68
(12H, m) 1.45−1.01 (18H, m), 0.99, 0.84,
0.69 (1:4:1) (6H, respectively s, J ( 195 Pt-Si
-C -1 H) = 27.0Hz) Example 8 Tris (triethylphosphine) platinum 0.75m
1 H by heating 8.5 mol, methyltrichlorosilane equivalents in 0.25 ml of benzene at 90 °C for 15 min.
-NMR showed that dichloromethylsilyl(chloro)bis(trimethylphosphine)platinum was obtained almost quantitatively. By concentrating the reaction solution, a colorless highly viscous liquid was obtained. This compound is a new compound that has not been described in any literature, and its physical property values, spectral data, etc. are as follows. 1H -NMR: ÎŽ2.48-1.96 (12H, m), 1.39-0.97
(18H, m) 1.47, 1.38, 1.29 (1:4:1)
(3H, each s, J ( 195 Pt-Si-C -1 H) = 16.2 Hz) 31 P-NMR: 19.0 ppm (J ( 31 P- 195 Pt) = 2512 Hz) Example 9 Tris (triethylphosphine) Platinum 0.06m
md, 1 H by heating 3 equivalents of dichlorodimethylsilane in 0.2 ml of benzene at 120°C for 1 hour.
-NMR showed that dichlorodimethylsilyl(chloro)bis(trimethylphosphine)platinum was obtained in a yield of 90°C. By concentrating the reaction solution, a pale yellow highly viscous liquid was obtained. This compound is a new compound that has not been described in any literature, and its physical properties, spectrum data, etc. are as follows. 1H -NMR: Ύ2.37-1.72 (12H, m), 1.31-0.79
(18H, m) 1.09, 0.97, 0.85 (1:4:1)
(6H, respectively s, J ( 195 Pt-Si-C -1 H) = 21.6 Hz) 31 P-NMR: 19.2 ppm (J ( 31 P- 195 Pt) = 2700 Hz Example 10 Tris (triethylphosphine) platinum 0.38m
md, by heating 2.5 equivalents of iodopentamethyldisilane in 0.2 ml of benzene at 90°C for 10 minutes.
Pentamethyldisilyl(iodo)bis(trimethylphosphine)platinum was obtained with a yield of 90%. The reaction solution was concentrated and benzene-pentane (v/v=
After extraction with a ratio of 1:1), the extracted solution was concentrated to obtain a pale yellow solid. This compound is a new compound that has not been described in any literature, and its spectral data are as follows. 1H -NMR: ÎŽ2.62-2.10 (12H, m), 1.47-0.99
(18H, m) 0.90, 0.71, 0.52 (1:4:1)
(6H, each s, J( 195 Pt-Si-C -1 H) = 34.2
Hz), 0.45 (9H, s).

Claims (1)

【特蚱請求の範囲】[Claims]  ケむ玠−ハロゲン原子結合を有するケむ玠化
合物に、少なくずも分子のホスフむンを配䜍し
た䟡のニツケル族遷移金属錯䜓を反応させるこ
ずを特城ずするSi−ニツケル族遷移金属
結合を有するニツケル族遷移金属錯䜓の補造方
法。
1 Si-M (M: Nickel group transition metal) characterized by reacting a silicon compound having a silicon-halogen atom bond with a zero-valent Nickel group transition metal complex coordinated with at least two molecules of phosphine.
A method for producing a nickel group transition metal complex having a bond.
JP63254508A 1988-02-10 1988-10-07 Production of complex of nickel group metal having silicon-transition metal bond Granted JPH02794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63254508A JPH02794A (en) 1988-02-10 1988-10-07 Production of complex of nickel group metal having silicon-transition metal bond

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2949188 1988-02-10
JP63-29491 1988-02-10
JP63254508A JPH02794A (en) 1988-02-10 1988-10-07 Production of complex of nickel group metal having silicon-transition metal bond

Publications (2)

Publication Number Publication Date
JPH02794A JPH02794A (en) 1990-01-05
JPH0552840B2 true JPH0552840B2 (en) 1993-08-06

Family

ID=12277543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63254508A Granted JPH02794A (en) 1988-02-10 1988-10-07 Production of complex of nickel group metal having silicon-transition metal bond

Country Status (1)

Country Link
JP (1) JPH02794A (en)

Also Published As

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JPH02794A (en) 1990-01-05

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