JPH0552840B2 - - Google Patents
Info
- Publication number
- JPH0552840B2 JPH0552840B2 JP63254508A JP25450888A JPH0552840B2 JP H0552840 B2 JPH0552840 B2 JP H0552840B2 JP 63254508 A JP63254508 A JP 63254508A JP 25450888 A JP25450888 A JP 25450888A JP H0552840 B2 JPH0552840 B2 JP H0552840B2
- Authority
- JP
- Japan
- Prior art keywords
- transition metal
- platinum
- silicon
- group
- nmr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052723 transition metal Inorganic materials 0.000 claims description 33
- -1 Nickel group transition metal Chemical class 0.000 claims description 20
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 12
- 150000003377 silicon compounds Chemical class 0.000 claims description 9
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910007933 Si-M Inorganic materials 0.000 claims description 2
- 229910008318 SiâM Inorganic materials 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 45
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 37
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 18
- 229910052697 platinum Inorganic materials 0.000 description 17
- 238000005481 NMR spectroscopy Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 150000003624 transition metals Chemical class 0.000 description 8
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 8
- 238000005160 1H NMR spectroscopy Methods 0.000 description 7
- 239000003446 ligand Substances 0.000 description 7
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- BWCJRZHVPWFFBH-UHFFFAOYSA-N platinum;triethylphosphane Chemical compound [Pt].CCP(CC)CC.CCP(CC)CC.CCP(CC)CC BWCJRZHVPWFFBH-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 125000005843 halogen group Chemical group 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 229910018540 Si C Inorganic materials 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- IYYIVELXUANFED-UHFFFAOYSA-N bromo(trimethyl)silane Chemical compound C[Si](C)(C)Br IYYIVELXUANFED-UHFFFAOYSA-N 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- CSRZQMIRAZTJOY-UHFFFAOYSA-N trimethylsilyl iodide Chemical compound C[Si](C)(C)I CSRZQMIRAZTJOY-UHFFFAOYSA-N 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- HASCQPSFPAKVEK-UHFFFAOYSA-N dimethyl(phenyl)phosphine Chemical compound CP(C)C1=CC=CC=C1 HASCQPSFPAKVEK-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 150000003003 phosphines Chemical group 0.000 description 3
- GMPRTAUUMQDBAC-UHFFFAOYSA-N [SiH3].[Hg] Chemical class [SiH3].[Hg] GMPRTAUUMQDBAC-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- DNKYMRIVXIQCFO-UHFFFAOYSA-N benzene pentane Chemical compound CCCCC.CCCCC.C1=CC=CC=C1 DNKYMRIVXIQCFO-UHFFFAOYSA-N 0.000 description 2
- CBOXQJGHYXSYFT-UHFFFAOYSA-N bromo-dimethyl-phenylsilane Chemical compound C[Si](C)(Br)C1=CC=CC=C1 CBOXQJGHYXSYFT-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 2
- HEYOIUWMSWPHEM-UHFFFAOYSA-N iodo-dimethyl-trimethylsilylsilane Chemical compound C[Si](C)(C)[Si](C)(C)I HEYOIUWMSWPHEM-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000005055 methyl trichlorosilane Substances 0.000 description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- DYQNWGKJOFYBID-UHFFFAOYSA-N platinum;triethylphosphane Chemical compound [Pt].CCP(CC)CC.CCP(CC)CC.CCP(CC)CC.CCP(CC)CC DYQNWGKJOFYBID-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UKSZBOKPHAQOMP-SVLSSHOZSA-N (1e,4e)-1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 UKSZBOKPHAQOMP-SVLSSHOZSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000003302 alkenyloxy group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 125000005133 alkynyloxy group Chemical group 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000002102 aryl alkyloxo group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- MLSWRAMUWWNBQG-UHFFFAOYSA-N bromo-methyl-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](Br)(C)C1=CC=CC=C1 MLSWRAMUWWNBQG-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- XSDCTSITJJJDPY-UHFFFAOYSA-N chloro-ethenyl-dimethylsilane Chemical compound C[Si](C)(Cl)C=C XSDCTSITJJJDPY-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000000000 cycloalkoxy group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- 238000006704 dehydrohalogenation reaction Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- WUOIAOOSKMHJOV-UHFFFAOYSA-N ethyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(CC)C1=CC=CC=C1 WUOIAOOSKMHJOV-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000002346 iodo group Chemical group I* 0.000 description 1
- 239000012280 lithium aluminium hydride Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 238000006464 oxidative addition reaction Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Description
ãçºæã®è©³çްãªèª¬æã
ãç£æ¥äžã®å©çšåéã
æ¬çºæã¯ãã±ã€çŽ âé·ç§»éå±çµåãæãããã
ã±ã«æé·ç§»éå±é¯äœã補é ããæ¹æ³ã«é¢ãããã®
ã§ãããDETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing a nickel group transition metal complex having a silicon-transition metal bond.
ã±ã€çŽ âé·ç§»éå±çµåãæããé¯äœã¯ãååŠæ°
çžåå¿ãèžçã«ãã€ãŠãããã€ã¹ã«äœ¿ãããé·ç§»
éå±ã·ãªãµã€ãã補é ããåæãšããŠãçšããã
ãŠããã Complexes having silicon-transition metal bonds are used as raw materials for producing transition metal silicides used in devices by chemical vapor phase reactions or vapor deposition.
åŸæ¥ãã±ã€çŽ âé·ç§»éå±çµåãæããé¯äœã¯ã
以äžã®ãããªæ¹æ³ã§è£œé ãããŠããã
Conventionally, complexes with silicon-transition metal bonds are
It was manufactured in the following way.
(1) ããã·ã©ã³ãšé·ç§»éå±ã¢ããªã³ã®åå¿ã(1) Reaction between halosilane and transition metal anion.
(2) ã·ãªã«ã¢ã«ã«ãªéå±ãšé·ç§»éå±ããã²ã³åç©
ã®åå¿ã(2) Reaction between silyl alkali metal and transition metal halide.
(3) ã·ãªã«æ°Žéãšé·ç§»éå±é¯äœã®åå¿ã(3) Reaction of silylmercury and transition metal complexes.
(4) ãããã·ã©ã³ã®äœåå䟡é·ç§»éå±é¯äœãžã®é
ž
åçä»å ã(4) Oxidative addition of hydrosilane to low-valent transition metal complexes.
(5) ãããã·ã©ã³ãšé·ç§»éå±ããã²ã³åç©ããã®
è±ããã²ã³åæ°ŽçŽ åå¿ã(5) Dehydrohalogenation reaction between hydrosilane and transition metal halide.
ããããªãããåèšæ¹æ³ã§ã¯ãããããã«åé¡
ç¹ãããã(1)ã®æ¹æ³ã§ã¯ãé·ç§»é屿åãã¢ããª
ã³ã圢æãããã®ã§ãªããã°ãªããããã®ããé·
ç§»éå±ãšé
äœåã®çš®é¡ã»æ§é ãéå®ãããã(2)ã®
æ¹æ³ã§ã¯ãã¢ãªã«ãªéå±ã䜿çšãããããæäœäž
ã®å±éºã䌎ãããŸããã¢ã«ã«ãªéå±ãšåå¿ãåŸã
眮æåºãæããã·ãªã«é·ç§»éå±é¯äœã¯ãåççã«
補é ã§ããªãã(3)ã®æ¹æ³ã§ã¯ãã·ãªã«æ°Žé補é ã®
段éã§ã¢ã«ã«ãªéå±ã䜿çšããäžã«ãæ¯æ§ã®é«ã
æ°Žéã䜿çšããããããã®å·¥æ¥çå©çšã¯ãèãã
å¶çŽãããããŸãã±ã€çŽ äžã®çœ®æåºãã¡ãã«åºã«
éå®ãããã(4)ã®æ¹æ³ã§ã¯ãçš®ã
ã®ã±ã€çŽ âé·ç§»
éå±é¯äœã補é ã§ããããéåžžå
¥æå®¹æãªããã·
ã©ã³ããé«äŸ¡ãªæ°ŽçŽ åã¢ã«ãããŠã ãªããŠã ãªã©
ã§éå
ãããããã·ã©ã³ãšããŠããåå¿ã«äŸãã
å¿
èŠããããå·¥çšãè€éã§ããããŸãã(5)ã®æ¹æ³
ãããããã·ã©ã³ãçšããããã(4)ãšåæ§ã®åé¡
ç¹ãæããäžã«ãå¡©åºå
±åäžã§åå¿ãè¡ãããã
å¡©åºãšåå¿ãåŸã眮æåºãæããã·ãªã«é·ç§»éå±
é¯äœã¯ãåççã«è£œé ã§ããªãããŸããã±ã€çŽ äž
ã®çœ®æåºãé
äœåã®çš®é¡ãç¹å®ã®ãã®ã«éå®ãã
ãã However, each of the above methods has its own problems. In method (1), the transition metal component must form an anion, which limits the types and structures of the transition metal and the ligand. . In method (2), since an alkali metal is used, there are operational risks, and a silyl transition metal complex having a substituent that can react with an alkali metal cannot be produced in principle. In method (3), not only an alkali metal is used in the step of producing silylmercury, but also highly toxic mercury is used, so its industrial use is severely restricted. Substituents on silicon are also limited to methyl groups. Method (4) allows the production of various silicon-transition metal complexes, but the process is complicated because it requires reducing the usually easily available halosilane with expensive lithium aluminum hydride to form hydrosilane and then subjecting it to the reaction. It is. In addition, since method (5) uses hydrosilane, it has the same problems as (4), and also because the reaction is carried out in the presence of a base.
A silyl transition metal complex having a substituent that can react with a base cannot be produced in principle. Furthermore, the types of substituents and ligands on silicon are also limited to specific ones.
æ¬çºæè
ãã¯ããããã®åé¡ç¹ã解決ããã¹ã
éæç ç©¶ãéããçµæãããã·ã©ã³ãäœåå䟡é
å±é¯äœãšå®¹æã«åå¿ããäºå®ãèŠåºããæ¬çºæã«
å°éããã The present inventors have conducted extensive research to solve these problems, and as a result, have discovered that halosilane easily reacts with low-valent metal complexes, and have arrived at the present invention.
æ¬çºæã¯ãã±ã€çŽ âé·ç§»éå±çµåãçæããã
ããã®å
šãæ°èŠãªæ¹æ³ãéçºããã±ã€çŽ âé·ç§»é
å±çµåãæããé¯äœãæäŸããããšãããã®ã§ã
ãã
The present invention seeks to develop a completely new method for producing silicon-transition metal bonds and to provide complexes having silicon-transition metal bonds.
æ¬çºæè
ãã¯ãåèšç®çãéæãã¹ãéæç ç©¶
ãéããçµæãã±ã€çŽ âããã²ã³ååçµåãæã
ãã±ã€çŽ ååç©ã«ãç¹å®ã®ããã±ã«æéå±é¯äœã
åå¿ãããããšã«ãããã±ã€çŽ âé·ç§»éå±çµåã
æããååç©ãåŸãããããšãèŠåºããæ¬çºæã
宿ããã«å°ã€ãã
As a result of intensive research to achieve the above object, the present inventors have discovered that by reacting a specific nickel group metal complex with a silicon compound having a silicon-halogen atom bond, a compound having a silicon-transition metal bond can be produced. The present inventors have discovered that the following can be obtained, and have completed the present invention.
ããªãã¡ãæ¬çºæã«ããã°ãã±ã€çŽ âããã²ã³
ååçµåãæããã±ã€çŽ ååç©ã«ãå°ãªããšãïŒ
ååã®ãã¹ãã€ã³ãé
äœããïŒäŸ¡ã®ããã±ã«æé·
ç§»éå±é¯äœãåå¿ãããããšãç¹åŸŽãšããSiâïŒ
ïŒïŒïŒããã±ã«æé·ç§»éå±ïŒçµåãæããããã±
ã«æé·ç§»éå±é¯äœã®è£œé æ¹æ³ãäŸçµŠãããã That is, according to the present invention, a silicon compound having a silicon-halogen atom bond has at least two
Si-M characterized by reacting a zero-valent nickel group transition metal complex coordinated with molecular phosphine
A method for producing a nickel group transition metal complex having a (M: nickel group transition metal) bond is provided.
æ¬çºæã«ãããåå¿ã¯æ¬¡ã®åŒã§è¡šããããã The reaction in the present invention is represented by the following formula.
åèšåŒäžãïŒã¯ããã±ã«æé·ç§»éå±ãã¯ãã
ã²ã³ååãã¯ãã¹ãã€ã³ãLâ²ã¯ãã¹ãã€ã³ä»¥å€
ã®ïŒãŸãã¯ïŒé»å絊äžé
äœåãïœã¯ïŒä»¥äžã®æŽ
æ°ãnâ²ã¯ïŒãïŒãŸãã¯ïŒã瀺ãããLâ²ã¯é
äœçµ
åæ§ã®ãããMLnLâ²nâ²ã®åœ¢åŒé
žåæ°ã¯ïŒã§ããã
ãŸããïŒãšïŒžãšã®çµååã³ïŒãšSiãšã®çµåã¯å
±æ
çµåã§ããããã
ã®åœ¢åŒé
žåæ°ã¯ïŒã§ããã In the above formula, M is a nickel group transition metal, X is a halogen atom, L is phosphine, L' is a 2- or 4-electron-bearing ligand other than phosphine, n is an integer of 2 or more, and n' is 0, 1 or 2. shows. Since L and L' are coordinate bonds, the formal oxidation number of MLnL'n' is 0.
In addition, since the bond between M and X and the bond between M and Si are covalent bonds, The formal oxidation number of is 2.
æ¬çºæã§çšããã±ã€çŽ ååç©ã¯ãå°ããšãïŒå
ã®SiâïŒïŒžïŒããã²ã³ååïŒçµåãæãããã®
ã§ãããäŸãã°ã次ã®äžè¬åŒã§è¡šãããã®ãçšã
ãããšãã§ããã The silicon compound used in the present invention has at least one Si-X (X: halogen atom) bond, and for example, those represented by the following general formula can be used.
åèšåŒäžãR1ãR2åã³R3ã¯ãã¢ã«ãã«åºãã·
ã¯ãã¢ã«ãã«åºãã¢ãªãŒã«åºãã¢ã©ã«ãã«åºãã¢
ã«ã±ãã«åºãã¢ã«ããã«åºãã¢ã«ã³ãã·åºãã·ã¯
ãã¢ã«ã³ãã·åºãã¢ãªãŒããã·åºãã¢ã©ã«ããã
ã·åºãã¢ã«ã±ãããã·åºãã¢ã«ããããã·åºãã·
ãªã«åºåã¯ããã²ã³ååã衚ãããã¯ããã²ã³
ååã衚ããã In the above formula, R 1 , R 2 and R 3 are an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an aralkyloxy group, an alkenyloxy group, and an alkynyloxy group. group, silyl group, or halogen atom. X represents a halogen atom.
æ¬çºæã®æ¹æ³ã«çšããã±ã€çŽ ååç©ãäŸç€ºãã
ã°ãåå¡©åã±ã€çŽ ãã¡ãã«ããªã¯ããã·ã©ã³ããž
ã¡ãã«ãžã¯ããã·ã©ã³ãããªã¡ãã«ããã¢ã·ã©
ã³ããžã¡ãã«ããšãã«ããã¢ã·ã©ã³ãã¡ãã«ãžã
ãšãã«ããã¢ã·ã©ã³ããã³ãžã«ãžã¡ãã«ããã¢ã·
ã©ã³ãããªã¡ãã«ãšãŒãã·ã©ã³ãããã«ãžã¡ãã«
ã¯ããã·ã©ã³ããšãŒããã³ã¿ã¡ãã«ãžã·ã©ã³ãªã©
ããããããšãã§ããã Examples of silicon compounds used in the method of the present invention include silicon tetrachloride, methyltrichlorosilane, dimethyldichlorosilane, trimethylbromosilane, dimethylphenylbromosilane, methyldiphenylbromosilane, benzyldimethylbromosilane, trimethyliodosilane, Examples include vinyldimethylchlorosilane and iodopentamethyldisilane.
æ¬çºæã®æ¹æ³ã«çšããïŒäŸ¡ã®ããã±ã«æé·ç§»é
å±é¯äœã¯ãããã±ã«ããã©ãžãŠã ãçœéã®é¯äœã§
ãããé¯äœãæ§æããé
äœåã¯ãææ©åºã§çœ®æã
ãããã¹ãã€ã³é¡ã ãã§ãããããããããã¹ã
ã€ã³é¡ã«å ããŠããªã¬ãã€ã³ããžãšã³ãäžé
žåç
çŽ ãªã©ã®ïŒãŸãã¯ïŒé»å絊äžé
äœåããã€ãŠãã
ãã The zero-valent nickel group transition metal complex used in the method of the present invention is a complex of nickel, palladium, and platinum, and the ligand constituting the complex may be only phosphines substituted with an organic group, but these phosphines In addition to the above, there may also be two- or four-electron donating ligands such as olefins, dienes, carbon monoxide, etc.
åèšãã¹ãã€ã³é¡ãäŸç€ºããã°ãããªã¡ãã«ã
ã¹ãã€ã³ãããªãšãã«ãã¹ãã€ã³ãããªããã«ã
ã¹ãã€ã³ããžã¡ãã«ããšãã«ãã¹ãã€ã³ããšãã«
ãžããšãã«ãã¹ãã€ã³ãããªããšãã«ãã¹ãã€ã³
ãªã©ãããããããåŸã€ãŠãåèšïŒäŸ¡é·ç§»éå±é¯
äœãäŸç€ºããã°ãããã©ãã¹ïŒããªãšãã«ãã¹ã
ã€ã³ïŒçœéãããªã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœ
éãããã©ãã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒçœéã
ãã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒãžã«ã«ããã«çœ
éããã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒãšãã¬ã³çœ
éãããã©ãã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒãã©ãž
ãŠã ãããã©ãã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒãã©
ãžãŠã ãããã©ãã¹ïŒããªããšãã«ãã¹ãã€ã³ïŒ
ããã±ã«ãªã©ããããããã Examples of the phosphines include trimethylphosphine, triethylphosphine, tributylphosphine, dimethylphenylphosphine, ethyldiphenylphosphine, and triphenylphosphine. Therefore, examples of the zero-valent transition metal complexes include tetrakis(triethylphosphine)platinum, tris(triethylphosphine)platinum, tetrakis(trimethylphosphine)platinum,
Bis(triethylphosphine)dicarbonylplatinum, bis(triethylphosphine)ethyleneplatinum, tetrakis(trimethylphosphine)palladium, tetrakis(triethylphosphine)palladium, tetrakis(triphenylphosphine)
Examples include nickel.
ãããïŒäŸ¡ããã±ã«æé·ç§»éå±é¯äœã¯é¯äœãšã
ãŠä»èŸŒãæ¹æ³ã°ããã§ãªããåèšãã¹ãã€ã³é
äœ
åã®å
±åäžã§ãããé¯äœãäžããããã©ã«ã«ãã
ã«ããã±ã«ããã¹ïŒãžãã³ãžãªãã³ã¢ã»ãã³ïŒã
ã©ãžãŠã ããã¹ïŒïŒïŒïŒâã·ã¯ããªã¯ã¿ãžãšã³ïŒ
çœéãªã©ã®ïŒäŸ¡ããã±ã«æé·ç§»éå±é¯äœãšåèšã
ã¹ãã€ã³é
äœåãšããããããåå¿ç³»äžã«å ãã
æ¹æ³ã«ãã€ãŠããæ¬åå¿ã«äŸããããšãã§ããã These zero-valent nickel group transition metal complexes can be prepared not only as complexes, but also in the presence of the phosphine ligand, such as tetracarbonyl nickel, bis(dibenzylideneacetone)palladium, and bis(1,5-cyclooctane). Dien)
This reaction can also be carried out by adding a zero-valent nickel group transition metal complex such as platinum and the phosphine ligand to the reaction system.
åå¿ã«äŸãããã±ã€çŽ ååç©ã®ïŒäŸ¡ããã±ã«æ
é·ç§»éå±é¯äœã«å¯Ÿããã¢ã«æ¯ã¯ãä»»æã«éžã¶ããš
ãã§ããããïŒäŸ¡ããã±ã«æé·ç§»éå±é¯äœã«é¢ã
ãåçãèæ
®ããã°ãïŒä»¥äžã奜ãŸããã The molar ratio of the silicon compound to be subjected to the reaction to the zero-valent nickel group transition metal complex can be arbitrarily selected, but in consideration of the yield regarding the zero-valent nickel group transition metal complex, it is preferably 1 or more.
æ¬çºæã¯ãâ80âã300âã奜ãŸããã¯ãïŒâã
200âã®åå¿æž©åºŠã«ãããŠå®æœãããã The present invention can be carried out from -80°C to 300°C, preferably from 0°C to
It is carried out at a reaction temperature of 200°C.
æ¬çºæã®æ¹æ³ã¯ã溶åªã®æç¡ã«ããããã宿œ
ã§ããããæº¶åªãçšããå Žåã¯ãã¢ã«ã³ãŒã«ã第
ïŒçŽãŸãã¯ç¬¬ïŒçŽã¢ãã³ãã«ã«ãã³é
žãªã©ã®ãå
æãšããŠçšããã±ã€çŽ ååç©ãŸãã¯ïŒäŸ¡ããã±ã«
æé·ç§»éå±é¯äœãšåå¿ãåŸããã®ãé€ããŠãéåžž
çšããããæº¶åªãããªãã¡ããã³ãŒã³ããã«ãš
ã³ããã·ã¬ã³ããããµã³ããã«ãªã³ãªã©ã®çåæ°Ž
çŽ æº¶åªãçšããããšãã§ããã The method of the present invention can be carried out with or without a solvent, but when a solvent is used, silicon compounds or zero-valent nickel group transition metals used as raw materials such as alcohols, primary or secondary amines, carboxylic acids, etc. Commonly used solvents, ie, hydrocarbon solvents such as benzene, toluene, xylene, hexane, decalin, etc., can be used, except for those that can react with the complex.
åå¿æ··åç©ããã®çæç©ã®åé¢ç²Ÿè£œã¯ãäžè¬ç
ã«ã¯éå°ã®ã±ã€çŽ ååç©ãçå»åŸãåçµæ¶ããã
ãšã«ãã容æã«éããããã Separation and purification of the product from the reaction mixture is generally easily accomplished by distilling off excess silicon compounds and then recrystallizing the product.
æ¬çºæã«ãããããã²ã³ååãæããåºç¯ãªã±
ã€çŽ ååç©ãçŽæ¥é·ç§»éå±é¯äœãšåå¿ãããããš
ã«ãããæ¥µããŠå®¹æã«ã±ã€çŽ âé·ç§»éå±çµåãæ
ããçš®ã
ã®é¯äœãæäŸãããã
According to the present invention, various complexes having a silicon-transition metal bond can be provided very easily by directly reacting a wide variety of silicon compounds having a halogen atom with a transition metal complex.
æ¬çºæã宿œäŸã«ããæŽã«è©³ãã説æããã The present invention will be explained in more detail with reference to Examples.
宿œäŸ ïŒ
ããªã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœé0.43ïœ
molãããªã¡ãã«ããã¢ã·ã©ã³ïŒåœéããã³ãŒã³
0.9mläžã90âã§ïŒæéå ç±ããããšã«transâã
ãªã¡ãã«ã·ãªã«ïŒããã¢ïŒãã¹ïŒããªãšãã«ãã¹
ãã€ã³ïŒçœéãåŸãããããNMRããåçã¯93
ïŒ
ã§ãã€ããåå¿æ¶²ãæ¿çž®ãããã³ã¿ã³ããåçµ
æ¶ãããšã39ïŒ
ã®åçã§æ·¡é»è²éç¶çµæ¶ãåŸãã
ãããã®ãã®ã¯æç®ã«æªåèŒã®æ°èŠååç©ã§ã
ãããã®ç©æ§å€ãã¹ãã¯ãã«ããŒã¿ãªã©ã¯ã以äž
ã®ãšããã§ãã€ããExample 1 Tris(triethylphosphine) platinum 0.43m
mol, 4 equivalents of trimethylbromosilane in benzene
Trans-trimethylsilyl(bromo)bis(triethylphosphine)platinum was obtained by heating in 0.9ml at 90°C for 4 hours. . Yield from NMR is 93
It was %. The reaction solution was concentrated and recrystallized from pentane to obtain pale yellow needle crystals with a yield of 39%. This compound is a new compound that has not been described in any literature, and its physical properties, spectrum data, etc. are as follows.
èç¹ïŒ58ã60âãIRïŒ1236ã1038ã840ã768ã
742ã618cm-1ã1HâNMRïŒÎŽ2.56ã1.84ïŒ12Hã
ïœïŒã1.45ã1.02ïŒ18HãïœïŒã0.83ã0.69ã0.55
ïŒïŒïŒïŒïŒïŒïŒïŒ9Hãåã
ïœãïŒ195PtâSiâ
â1HïŒïŒ25.2HzïŒppm.
å
çŽ åæå€ C15H39BrP2PtSi
èšç®å€ ïŒ30.82ïŒ
ãïŒïŒ6.73ïŒ
宿ž¬å€ ïŒ30.80ïŒ
ãïŒïŒ6.80ïŒ
宿œäŸ ïŒ
ããã©ãã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœé0.14
ïœmolãããªã¡ãã«ããã¢ã·ã©ã³3.8åœéããã³
ãŒã³0.3mläžã90âã§19.5æéå ç±åŸã宿œäŸïŒ
ãšåæ§ã«åŠçãããtransâãã¬ã¡ãã«ã·ãªã«
ïŒããã¢ïŒãã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœéã®
åçã¯90ïŒ
ã§ãã€ããMelting point: 58-60â, IR: 1236, 1038, 840, 768,
742, 618 cm -1 , 1 H-NMR: ÎŽ2.56 ~ 1.84 (12H,
m), 1.45-1.02 (18H, m), 0.83, 0.69, 0.55
(1:4:1) (9H, respectively s, J ( 195 Pt-Si-
C- 1 H) = 25.2Hz) ppm. Elemental analysis value C 15 H 39 BrP 2 PtSi Calculated value C; 30.82%, H;, 6.73% Actual value C; 30.80%, H;, 6.80% Example 2 Tetrakis ( triethylphosphine) platinum 0.14
Example 1 After heating 3.8 mmol of trimethylbromosilane in 0.3 ml of benzene at 90°C for 19.5 hours.
processed in the same way. The yield of trans-tremethylsilyl(bromo)bis(triethylphosphine)platinum was 90%.
宿œäŸ ïŒ
ããªã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœé0.17ïœ
molãããªã¡ãã«ãšãŒãã·ã©ã³3.7åœéããã³ãŒ
ã³0.3mläžã90âã§ïŒæéå ç±ããããšã«ããã
1HâNMRã§ã¯ãã»ãŒå®éçã«ãããªã¡ãã«ã·ãª
ã«ïŒãšãŒãïŒãã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœé
ãåŸããããåå¿æ¶²ãæ¿çž®ããŠåŸãããåºäœãã
ã³ã¿ã³ããåçµæ¶ããŠæ·¡é»è²éç¶çµæ¶ãåŸããã
ã®ãã®ã¯æç®ã«æªåèŒã®æ°èŠååç©ã§ããããã®
ç©æ§å€ãã¹ãã¯ãã«ããŒã¿ãªã©ã§ã¯ä»¥äžã®ãšãã
ã§ãã€ããExample 3 Tris(triethylphosphine) platinum 0.17m
mol, by heating 3.7 equivalents of trimethyliodosilane in 0.3 ml of benzene at 90°C for 1 hour.
According to 1 H-NMR, trimethylsilyl(iodo)bis(triethylphosphine)platinum was obtained almost quantitatively. The solid obtained by concentrating the reaction solution was recrystallized from pentane to obtain pale yellow needle crystals. This compound is a new compound that has not been described in any literature, and its physical properties, spectrum data, etc. are as follows.
èç¹ïŒ79ã80âãIRïŒ1234ã1038ã838ã760ã
720ã618cm-1ã1HâNMRïŒÎŽ2.61â1.98ïŒ12Hã
ïœïŒã1.47â0.97ïŒ18HãïœïŒã0.78ã0.65ã0.52
ïŒïŒïŒïŒïŒïŒïŒïŒ9Hãåã
ïœãïŒ195PtâSiâ
C-1HïŒïŒ23.4HzïŒppm
宿œäŸ ïŒ
ããã©ãã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒçœé0.30
ïœmolãããªã¡ãã«ããã¢ã·ã©ã³3.8åœéããã³
ãŒã³0.4mläžã120âã§18æéå ç±ããããšã«ãã
1HâNMRã§ã¯50ïŒ
ã®åçã§ãããªã¡ãã«ã·ãªã«
ïŒããã¢ïŒãã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒçœéã
åŸããããåå¿æ¶²ãæ¿çž®ãããã³ãŒã³ã§æœåºãã
åŸããã³ãŒã³æº¶æ¶²ã«ãã³ã¿ã³ãå ããããšã«ãã
æ·¡é»è²åºäœãåŸãããã®ãã®ã¯æç®ã«æªåèŒã®æ°
èŠååç©ã§ããããã®ã¹ãã¯ãã«ããŒã¿ã¯ä»¥äžã®
ãšããã§ãã€ãã1
HâNMRïŒÎŽ1.41ïŒ18Hãbr ïœïŒã0.78ã0.63ã
0.48ïŒïŒïŒïŒïŒïŒïŒïŒ9Hãåã
ïœãïŒ195PtâSi
âC-1HïŒïŒ27.0HzïŒppm
宿œäŸ ïŒ
ããã©ãã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒçœé0.23
ïœmolãããªã¡ãã«ãšãŒãã·ã©ã³3.5åœéããã³
ãŒã³0.3mläžã90âã§ïŒæéå ç±ããããšã«ããã
1HâNMRã§ã¯90ïŒ
ã®åçã§ãããªã¡ãã«ã·ãªã«
ïŒãšãŒãïŒãã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒçœéã
åŸããããåå¿æ¶²ãæ¿çž®ãããã³ãŒã³ã§æœåºãã
åŸããã³ãŒã³æº¶æ¶²ãæ¿çž®ããããšã«ããæ·¡é»è²åº
äœãåŸãããã®ãã®ã¯æç®ã«æªåèŒã®æ°èŠååç©
ã§ããããã®ã¹ãã¯ãã«ããŒã¿ã¯ä»¥äžã®ãšããã§
ãã€ãã1
HâNMRïŒÎŽ1.63ïŒ18Hãbr ïœïŒã0.76ã0.61ã
0.46ïŒïŒïŒïŒïŒïŒïŒïŒ9Hãåã
ïœãïŒ195PtâSi
âC-1HïŒïŒ27.0HzïŒ31
PâNMRïŒâ15.8ppmïŒïŒªïŒ31Pâ195PtïŒïŒ2791
HzïŒ
宿œäŸ ïŒ
ããã©ãã¹ïŒãžã¡ãã«ããšãã«ãã¹ãã€ã³ïŒçœ
é0.08ïœmolãããªã¡ãã«ãšãŒãã·ã©ã³3.3åœéã
ãã³ãŒã³0.25mläžã120âã§13æéå ç±ããããš
ã«ããã1HâNMRã§ã¯78ïŒ
ã®åçã§ããªã¡ãã«
ã·ãªã«ïŒãšãŒãïŒãã¹ïŒãžã¡ãã«ããšãã«ãã¹ã
ã€ã³ïŒçœéãåŸããããåå¿æ¶²ãæ¿çž®ãããã³ãŒ
ã³âãã³ã¿ã³ïŒïœïŒïœïŒïŒïŒïŒïŒã§æœåºããåŸã
æœåºæ¶²ãæ¿çž®ããããšã«ããæ·¡é»è²åºäœãåŸãã
ãã®ãã®ã¯ãæç®ã«æªåèŒã®æ°èŠååç©ã§ããã
ãã®ã¹ãã¯ãã«ããŒã¿ã¯ä»¥äžã®ãšããã§ãã€ãã1
HâNMRïŒÎŽ8.02â7.19ïŒ10HãïœïŒã1.90ïŒ12Hã
br ïœïŒã0.46ã0.33ã0.20ïŒïŒïŒïŒïŒïŒïŒïŒ9Hã
åã
ïœãïŒ195PtâSiâC-1HïŒïŒ23.4HzïŒ
宿œäŸ ïŒ
ããªã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœé0.19ïœ
molããžã¡ãã«ããšãã«ããã¢ã·ã©ã³3.0åœéã
ãã³ãŒã³0.30mläžã90âã§ïŒæéå ç±ãããšã«ã
ã1HâNMRã§ã¯77ïŒ
ã®åçã§ããžã¡ãã«ããšã
ã«ã·ãªã«ïŒããã¢ïŒãã¹ïŒããªã¡ãã«ãã¹ãã€
ã³ïŒçœéãåŸããããåå¿æ¶²ãæ¿çž®ãããã³ã¿ã³
ã§æœåºããåŸããã³ã¿ã³æº¶æ¶²ãå·åŽããããšã«ã
ãæ·¡é»è²åºäœãåŸãããã®ãã®ã¯ãæç®ã«æªåèŒ
ã®æ°èŠååç©ã§ããããã®ã¹ãã¯ãã«ããŒã¿ã¯ä»¥
äžã®ãšããã§ãã€ãã1
HâNMRïŒÎŽ8.10â7.36ïŒ5HãïœïŒã2.30â1.68
ïŒ12HãïœïŒ1.45â1.01ïŒ18HãïœïŒã0.99ã0.84ã
0.69ïŒïŒïŒïŒïŒïŒïŒïŒ6Hãåã
ïœãïŒ195PtâSi
âC-1HïŒïŒ27.0HzïŒ
宿œäŸ ïŒ
ããªã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœé0.75ïœ
molãã¡ãã«ããªã¯ããã·ã©ã³8.5åœéããã³ãŒ
ã³0.25mläžã90âã§15åéå ç±ãããšã«ããã1H
âNMRã§ã¯ãã»ãŒå®éçã«ãžã¯ããã¡ãã«ã·ãª
ã«ïŒã¯ããïŒãã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒçœé
ãåŸããããåå¿æ¶²ãæ¿çž®ããããšã«ããããšã«
ããç¡è²é«ç²æ§æ¶²äœãåŸãããã®ãã®ã¯ãæç®ã«
æªåèŒã®æ°èŠååç©ã§ããããã®ç©æ§å€ãã¹ãã¯
ãã«ããŒã¿ãªã©ã¯ä»¥äžã®ãšããã§ãã€ãã1
HâNMRïŒÎŽ2.48â1.96ïŒ12HãïœïŒã1.39â0.97
ïŒ18HãïœïŒ1.47ã1.38ã1.29ïŒïŒïŒïŒïŒïŒïŒ
ïŒ3Hãåã
ïœãïŒ195PtâSiâC-1HïŒïŒ16.2HzïŒ31
PâNMRïŒ19.0ppmïŒïŒªïŒ31Pâ195PtïŒïŒ2512HzïŒ
宿œäŸ ïŒ
ããªã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœé0.06ïœ
mdããžã¯ãããžã¡ãã«ã·ã©ã³ïŒåœéãããã³ãŒ
ã³0.2mläžã120âã§ïŒæéå ç±ãããšã«ãã1H
âNMRã§ã¯90âã®åçã§ãžã¯ãããžã¡ãã«ã·ãª
ã«ïŒã¯ããïŒãã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒçœé
ãåŸããããåå¿æ¶²ãæ¿çž®ããããšã«ãããæ·¡é»
è²é«ç²æ§æ¶²äœãåŸãããã®ãã®ã¯æç®ã«æªåèŒã®
æ°èŠååç©ã§ããããã®ç©æ§å€ãã¹ãã¯ãã«ããŒ
ã¿ãªã©ã¯ä»¥äžã®ãšããã§ãã€ãã1
HâNMRïŒÎŽ2.37â1.72ïŒ12HãïœïŒã1.31â0.79
ïŒ18HãïœïŒ1.09ã0.97ã0.85ïŒïŒïŒïŒïŒïŒïŒ
ïŒ6Hãåã
ïœãïŒ195PtâSiâC-1HïŒïŒ21.6HzïŒ31
PâNMRïŒ19.2ppmïŒïŒªïŒ31Pâ195PtïŒïŒ2700Hz
宿œäŸ 10
ããªã¹ïŒããªãšãã«ãã¹ãã€ã³ïŒçœé0.38ïœ
mdããšãŒããã³ã¿ã¡ãã«ãžã·ã©ã³2.5åœéããã
ã³ãŒã³0.2mläžã90âã§10åéå ç±ãããšã«ããã
90ïŒ
ã®åçã§ãã³ã¿ã¡ãã«ãžã·ãªã«ïŒãšãŒãïŒã
ã¹ïŒããªã¡ãã«ãã¹ãã€ã³ïŒçœéãåŸããããå
å¿æ¶²ãæ¿çž®ãããã³ãŒã³âãã³ã¿ã³ïŒïœïŒïœïŒ
ïŒïŒïŒïŒã§æœåºããåŸãæœåºæº¶æ¶²ãæ¿çž®ããããš
ã«ãããæ·¡é»è²åºäœãåŸãããã®ãã®ã¯æç®ã«æª
åèŒã®æ°èŠååç©ã§ããããã®ã¹ãã¯ãã«ããŒã¿
ã¯ä»¥äžã®ãšããã§ãã€ãã1
HâNMRïŒÎŽ2.62â2.10ïŒ12HãïœïŒã1.47â0.99
ïŒ18HãïœïŒ0.90ã0.71ã0.52ïŒïŒïŒïŒïŒïŒïŒ
ïŒ6Hãåã
ïœãïŒ195PtâSiâC-1HïŒïŒ34.2
HzïŒã0.45ïŒ9HãïœïŒãMelting point: 79-80â, IR: 1234, 1038, 838, 760,
720, 618 cm -1 , 1 HâNMR: ÎŽ2.61â1.98 (12H,
m), 1.47â0.97 (18H, m), 0.78, 0.65, 0.52
(1:4:1) (9H, respectively s, J ( 195 Pt-Si-
C -1 H)=23.4Hz)ppm Example 4 Tetrakis(trimethylphosphine)platinum 0.30
mmol, by heating 3.8 equivalents of trimethylbromosilane in 0.4 ml of benzene at 120°C for 18 hours.
According to 1 H-NMR, trimethylsilyl(bromo)bis(trimethylphosphine)platinum was obtained with a yield of 50%. The reaction solution was concentrated and extracted with benzene, and then pentane was added to the benzene solution to obtain a pale yellow solid. This compound is a new compound that has not been described in any literature, and its spectral data are as follows. 1H -NMR: ÎŽ1.41 (18H, br s), 0.78, 0.63,
0.48 (1:4:1) (9H, respectively s, J ( 195 Pt-Si
-C -1 H) = 27.0Hz) ppm Example 5 Tetrakis(trimethylphosphine)platinum 0.23
By heating 3.5 mmol of trimethyliodosilane in 0.3 ml of benzene at 90°C for 1 hour,
According to 1 H-NMR, trimethylsilyl(iodo)bis(trimethylphosphine)platinum was obtained with a yield of 90%. After concentrating the reaction solution and extracting with benzene, a pale yellow solid was obtained by concentrating the benzene solution. This compound is a new compound that has not been described in any literature, and its spectral data are as follows. 1H -NMR: ÎŽ1.63 (18H, br s), 0.76, 0.61,
0.46 (1:4:1) (9H, respectively s, J ( 195 Pt-Si
-C -1 H) = 27.0Hz) 31 P-NMR: -15.8ppm (J( 31 P- 195 Pt) = 2791
Hz) Example 6 By heating 0.08 mmol of tetrakis(dimethylphenylphosphine)platinum and 3.3 equivalents of trimethyliodosilane in 0.25 ml of benzene at 120°C for 13 hours, trimethylsilyl was produced with a yield of 78% according to 1 H-NMR. (Iodo)bis(dimethylphenylphosphine)platinum was obtained. After concentrating the reaction solution and extracting with benzene-pentane (v/v=1:1),
A pale yellow solid was obtained by concentrating the extract.
This is a new compound that has not been described in the literature.
The spectrum data was as follows. 1H -NMR: ÎŽ8.02-7.19 (10H, m), 1.90 (12H,
br s), 0.46, 0.33, 0.20 (1:4:1) (9H,
s, J ( 195 Pt-Si-C -1 H) = 23.4 Hz) Example 7 Tris (triethylphosphine) platinum 0.19 m
By heating 3.0 equivalents of dimethylphenylbromosilane in 0.30 ml of benzene at 90°C for 2 hours, dimethylphenylsilyl(bromo)bis(trimethylphosphine)platinum was obtained with a yield of 77% by 1 H-NMR. was gotten. After concentrating the reaction solution and extracting with pentane, a pale yellow solid was obtained by cooling the pentane solution. This compound is a new compound that has not been described in any literature, and its spectral data are as follows. 1H -NMR: Ύ8.10-7.36 (5H, m), 2.30-1.68
(12H, m) 1.45â1.01 (18H, m), 0.99, 0.84,
0.69 (1:4:1) (6H, respectively s, J ( 195 Pt-Si
-C -1 H) = 27.0Hz) Example 8 Tris (triethylphosphine) platinum 0.75m
1 H by heating 8.5 mol, methyltrichlorosilane equivalents in 0.25 ml of benzene at 90 °C for 15 min.
-NMR showed that dichloromethylsilyl(chloro)bis(trimethylphosphine)platinum was obtained almost quantitatively. By concentrating the reaction solution, a colorless highly viscous liquid was obtained. This compound is a new compound that has not been described in any literature, and its physical property values, spectral data, etc. are as follows. 1H -NMR: ÎŽ2.48-1.96 (12H, m), 1.39-0.97
(18H, m) 1.47, 1.38, 1.29 (1:4:1)
(3H, each s, J ( 195 Pt-Si-C -1 H) = 16.2 Hz) 31 P-NMR: 19.0 ppm (J ( 31 P- 195 Pt) = 2512 Hz) Example 9 Tris (triethylphosphine) Platinum 0.06m
md, 1 H by heating 3 equivalents of dichlorodimethylsilane in 0.2 ml of benzene at 120°C for 1 hour.
-NMR showed that dichlorodimethylsilyl(chloro)bis(trimethylphosphine)platinum was obtained in a yield of 90°C. By concentrating the reaction solution, a pale yellow highly viscous liquid was obtained. This compound is a new compound that has not been described in any literature, and its physical properties, spectrum data, etc. are as follows. 1H -NMR: Ύ2.37-1.72 (12H, m), 1.31-0.79
(18H, m) 1.09, 0.97, 0.85 (1:4:1)
(6H, respectively s, J ( 195 Pt-Si-C -1 H) = 21.6 Hz) 31 P-NMR: 19.2 ppm (J ( 31 P- 195 Pt) = 2700 Hz Example 10 Tris (triethylphosphine) platinum 0.38m
md, by heating 2.5 equivalents of iodopentamethyldisilane in 0.2 ml of benzene at 90°C for 10 minutes.
Pentamethyldisilyl(iodo)bis(trimethylphosphine)platinum was obtained with a yield of 90%. The reaction solution was concentrated and benzene-pentane (v/v=
After extraction with a ratio of 1:1), the extracted solution was concentrated to obtain a pale yellow solid. This compound is a new compound that has not been described in any literature, and its spectral data are as follows. 1H -NMR: ÎŽ2.62-2.10 (12H, m), 1.47-0.99
(18H, m) 0.90, 0.71, 0.52 (1:4:1)
(6H, each s, J( 195 Pt-Si-C -1 H) = 34.2
Hz), 0.45 (9H, s).
Claims (1)
åç©ã«ãå°ãªããšãïŒååã®ãã¹ãã€ã³ãé äœã
ãïŒäŸ¡ã®ããã±ã«æé·ç§»éå±é¯äœãåå¿ãããã
ãšãç¹åŸŽãšããSiâïŒïŒïŒïŒããã±ã«æé·ç§»éå±ïŒ
çµåãæããããã±ã«æé·ç§»éå±é¯äœã®è£œé æ¹
æ³ã1 Si-M (M: Nickel group transition metal) characterized by reacting a silicon compound having a silicon-halogen atom bond with a zero-valent Nickel group transition metal complex coordinated with at least two molecules of phosphine.
A method for producing a nickel group transition metal complex having a bond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63254508A JPH02794A (en) | 1988-02-10 | 1988-10-07 | Production of complex of nickel group metal having silicon-transition metal bond |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2949188 | 1988-02-10 | ||
| JP63-29491 | 1988-02-10 | ||
| JP63254508A JPH02794A (en) | 1988-02-10 | 1988-10-07 | Production of complex of nickel group metal having silicon-transition metal bond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02794A JPH02794A (en) | 1990-01-05 |
| JPH0552840B2 true JPH0552840B2 (en) | 1993-08-06 |
Family
ID=12277543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63254508A Granted JPH02794A (en) | 1988-02-10 | 1988-10-07 | Production of complex of nickel group metal having silicon-transition metal bond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02794A (en) |
-
1988
- 1988-10-07 JP JP63254508A patent/JPH02794A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02794A (en) | 1990-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Fjeldberg et al. | Subvalent Group 4B metal alkyls and amides. Part 8. Germanium and tin carbene analogues MR 2 [M= Ge or Sn, R= CH (SiMe 3) 2]: syntheses and structures in the gas phase (electron diffraction); molecular-orbital calculations for MH 2 and GeMe 2 | |
| Chang et al. | Dehydrogenative coupling of diarylsilanes | |
| Enders et al. | 8âquinolylcyclopentadienyl, a ligand with a tailored fit for chelate complexes | |
| US2831880A (en) | Organosilicon derivatives of dicyclopentadienyl metals and methods for preparing the same | |
| Harmgarth et al. | Novel inorganic heterocycles from dimetalated carboranylamidinates | |
| JPH0331290A (en) | Production of tertiary hydrocarbon silyl compound | |
| Zheng et al. | Synthesis of new dipyridinylamine and dipyridinylmethane ligands and their coordination chemistry with Mg (II) and Zn (II) | |
| CA2099791C (en) | Method for the preparation of 1-aza-2-silacyclopentane compounds | |
| JPH0552840B2 (en) | ||
| JPS63250388A (en) | Manufacturing method of monoalkoxysilane compound | |
| CN101602774B (en) | Method for preparing silylene by carbene-induced halogenated silane dehydrohalogenation | |
| Neilson et al. | Structural isomerization of (bis (trimethylsilyl) amino) phosphine oxides | |
| JPH0512356B2 (en) | ||
| US5049688A (en) | Allyl cyclosilalactams | |
| JP3856088B2 (en) | Method for producing bissilylnorbornane compound | |
| JP2869521B2 (en) | Cyclic silyl enol ethers and production method thereof | |
| JPH06228159A (en) | Manufacturing of cyclopentadiene derivative | |
| JP2705967B2 (en) | 1-aza-2-silacyclobutane compound and method for producing the same | |
| US3652625A (en) | Process for the preparation of bis(triorganosilyl)acetylene | |
| JP2611186B2 (en) | Organic germanium compounds | |
| JPH0314590A (en) | Unsaturated group-containing organosilicon compound and its production | |
| JPS6183191A (en) | Silylation of aromatic imide and imide manufactured therefrom | |
| JP2963985B2 (en) | 2-silylalkenylborane compound and method for producing the same | |
| JPH0641474B2 (en) | Method for producing disilanes | |
| US3607895A (en) | Bis(organosilyl) trihydrocarbyl silylamines |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |