JPH0553872B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION This invention relates to a method for manufacturing a vacuum chamber in a CVD device and a dry etching device.

In this specification, the term "aluminum" includes not only pure aluminum but also aluminum alloys. However, the term "aluminum element" does not include aluminum alloys.

Prior art and its problems During the CVD process, reaction gases such as SiCl ₄ , SiH ₂ Cl ₂ , AlCl ₃ ,
Corrosive gases such as PCl ₃ and BCl ₃ are introduced into the vacuum chamber of dry etching equipment, and corrosive gases containing chlorine are introduced as etching gases into the vacuum chamber of dry etching equipment. The chamber was made of stainless steel. However, vacuum chambers made of stainless steel have the problem of being heavy and having poor thermal conductivity. If thermal conductivity is insufficient, the following problems may occur. In other words, when CVD equipment and dry etching equipment operate, the inner surface of the vacuum chamber is first heated to 200 to 250°C to perform a baking process to remove moisture adsorbed on the inner surface of the vacuum chamber. If the conductivity is poor, it takes time to uniformly heat the entire vacuum chamber during the baking process.

Therefore, it has been considered to make a vacuum chamber using aluminum, which is lighter in weight than stainless steel, has excellent thermal conductivity, and has a small surface gas release coefficient.
There is a problem of corrosion caused by the gases used during etching and dry etching.
The reality is that a vacuum chamber made of aluminum has not yet been realized.

The purpose of this invention is to solve the above problems
An object of the present invention is to provide a method for manufacturing a vacuum chamber in a CVD device and a dry etching device.

Means for Solving the Problems A method for manufacturing a vacuum chamber in a CVD device and a dry etching device according to the present invention includes the following steps:
After making the aluminum box-shaped body and lid for the vacuum chamber, at least the inner surfaces of the inside and outside surfaces are filled with a reactive gas and dry gas that reacts with the aluminum element and is used in the CVD method by ion implantation. This method is characterized in that a coating layer made of the above-mentioned compound is formed by implanting ions that create a compound that has corrosion resistance against the etching gas used in etching.

In the above, reacting with aluminum element
There are many ions that create compounds that have corrosion resistance against the reactive gases used in CVD methods and the etching gases used in dry etching, among which oxygen ions, nitrogen ions, carbon ions, etc. It will be done. These ions are obtained from easily gasified N ₂ , O ₂ , C, etc. Compounds created by the reaction of the above ions with aluminum element are AlN, AlC, Al _2
O3 etc. Also, the thickness of the compound coating layer is 0.1
It is preferably within the range of ~1 μm. The reason for this is that if the thickness of the coating layer is less than 0.1 μm, the corrosion resistance of the coating layer against the above-mentioned reaction gas will not be sufficient, and depending on ion implantation, the above-mentioned thickness may be reduced to 1 μm.
This is because it cannot be made thicker than . The thickness of the coating layer is controlled by controlling the accelerating voltage related to the implantation depth, the ion implantation current related to the implantation amount, etc. during ion implantation. In order to make the thickness of the coating layer 0.1 to 1 μm, for example, the accelerating voltage is controlled to 50 to 500 KV,
The ion implantation current is 1×10 ¹⁸ to 1×10 ¹⁹
pcs/cm ² .

Effect Since the box-shaped body and lid of the vacuum chamber manufactured by the method of this invention are made of aluminum,
Compared to conventional stainless steel vacuum chambers, it is lighter, has improved thermal conductivity, and has a lower outgassing coefficient. Furthermore, since the main body and the lid are made from aluminum, processing is easier than when they are made from stainless steel. Furthermore, material costs are reduced.

In addition, at least the inner surfaces of both the inner and outer surfaces of the main body and lid are ion-implanted to provide corrosion resistance against reactive gases that react with aluminum elements and are used in CVD methods and etching gases used in dry etching. Since the coating layer made of the above-mentioned compound is formed by implanting ions that make the compound, the corrosion resistance against gases used in CVD and dry etching is equal to or higher than that of stainless steel. Furthermore, moisture is not adsorbed to the formed coating layer during its formation.

Examples Examples of the present invention will be shown below along with comparative examples.

Example 1 First, a box-shaped main body and a lid for a vacuum chamber were made from aluminum material. Next, the main body and lid are targeted, and an accelerating voltage is applied to their inner surfaces.
At 300KV, 1×10 ¹⁹ titanium ions/
Injected ^cm2 . Then, an AlN layer with a thickness of 1 μm was formed on the inner surfaces of the main body and the lid. Then, the box-shaped body and lid were placed in a SiCl ₄ gas atmosphere at 150°C.
The corrosion resistance of the main body and lid was examined after being left for 1000 hours. As a result, no corrosion occurred on the inner surfaces of the main body and the lid.

Example 2 Carbon ions were used as the implanted ions during ion implantation, and the acceleration voltage was 100 KV and the ion implantation amount was 1.
A 0.5 μm thick AlC layer was formed on the inner surfaces of the main body and the lid in the same manner as in Example 1, except that the number of pieces was 18× ^{10 18} /cm ² , and the corrosion resistance of the inner surfaces was Examined. As a result, no corrosion was observed on the inner surfaces of the main body and lid.

Example 3 Oxygen ions were used as the implanted ions during ion implantation, the acceleration voltage was 300 KV, and the ion implantation amount was 1.
×10 ¹⁹ pieces/cm ² except that a 1 μm thick Al ₂ O ₃ layer was formed on the inner surfaces of the main body and lid in the same manner as in Example 1 above, and Corrosion resistance was investigated. As a result, no corrosion was observed on the inner surfaces of the main body and lid.

Comparative Example First, a box-shaped main body and a lid for a vacuum chamber were made from aluminum material. Then, the box-shaped main body and the lid were left in a SiCl ₄ gas atmosphere at a temperature of 150° C. for 1000 hours, and the corrosion resistance of the main body and the lid was examined. As a result, the surfaces of the main body and lid were severely corroded.

Effects of the Invention According to the method of manufacturing a vacuum chamber for a CVD device and a dry etching device according to the present invention, as described above, it is lighter in weight and has better thermal conductivity than the conventional one made of stainless steel. Vacuum chambers with low emissions can be manufactured. Moreover, since the main body and the lid are made from aluminum material, processing is easier and the material cost is lower than when they are made from stainless steel material. In particular, since the manufactured vacuum chamber has excellent thermal conductivity, baking processing time during operation of CVD equipment and dry etching equipment can be reduced compared to conventional vacuum chambers.

In addition, at least the inner surfaces of both the inner and outer surfaces of the main body and lid are ion-implanted to provide corrosion resistance against reactive gases that react with aluminum elements and are used in CVD methods and etching gases used in dry etching. Since the coating layer made of the above-mentioned compound is formed by implanting ions that make the compound, the corrosion resistance against gases used in CVD and dry etching is equal to or higher than that of stainless steel. Moreover, since moisture is not adsorbed to the formed coating layer during its formation, such an operation for removing moisture becomes unnecessary. In addition, since no moisture is adsorbed in the formed coating layer, when the manufactured vacuum rain chamber is used in CVD equipment and dry etching equipment, it is only necessary to perform the conventional baking treatment. Coupled with the fact that aluminum has a lower surface gas release coefficient than stainless steel, it is possible to prevent a decrease in the degree of vacuum in the vacuum chamber during the operation of CVD equipment and dry etching equipment.

Claims (1)

[Claims] 1 After making an aluminum box-like body and a lid for a vacuum chamber, at least the inner surfaces of these inside and outside surfaces are injected with a reactive gas and a dry gas that react with the aluminum element and are used in the CVD method by ion implantation. - A method for manufacturing a vacuum chamber in a CVD device and a dry etching device, characterized in that a coating layer made of the compound is formed by implanting ions that create a compound that has corrosion resistance against the etching gas used for etching.