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JPH056281B2 - - Google Patents
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JPH056281B2 - - Google Patents

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Publication number
JPH056281B2
JPH056281B2 JP14602885A JP14602885A JPH056281B2 JP H056281 B2 JPH056281 B2 JP H056281B2 JP 14602885 A JP14602885 A JP 14602885A JP 14602885 A JP14602885 A JP 14602885A JP H056281 B2 JPH056281 B2 JP H056281B2
Authority
JP
Japan
Prior art keywords
weight
paste
oxide
insulating
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP14602885A
Other languages
Japanese (ja)
Other versions
JPS628404A (en
Inventor
Eiichi Asada
Tetsuya Tanaka
Kazutoshi Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shoei Chemical Inc
Original Assignee
Shoei Chemical Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shoei Chemical Inc filed Critical Shoei Chemical Inc
Priority to JP14602885A priority Critical patent/JPS628404A/en
Publication of JPS628404A publication Critical patent/JPS628404A/en
Publication of JPH056281B2 publication Critical patent/JPH056281B2/ja
Granted legal-status Critical Current

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  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 本発明は、非酸化性雰囲気中において比較的低
温で焼成し得る絶縁層形成用厚膜ガラスペース
ト、特に卑金属導体を用いた厚膜多層回路の絶縁
層を製造するのに有用な絶縁性ガラスペーストに
関する。 従来の技術 多層回路を製造する一つの方法に、焼成された
セラミツク基板上に第一導体層として厚膜導体ペ
ーストを印刷、焼成し、次いで上下の導体を分
離、絶縁するために絶縁ペーストを印刷、焼成
し、その上に第二の導体層を形成する工程を順次
繰返すことにより、厚膜方式で導体層と絶縁層を
交互に積層していく方法がある。このような厚膜
多層回路に使用される絶縁ペーストとしては、膜
構造を強化するために酸化物フイラーを含有する
ガラスペースト、又は部分結晶性のガラスペース
トを用いるのが一般的である。 近年エレクトロニクス業界において、高信頼性
の卑金属システムを採用することが強く要望され
ている。厚膜導体についてもAg/Pd、Au、
Ag/Ptなどの貴金属系からCu、Niなどの卑金属
系への移行の検討がなされているが、これに伴つ
てこれら卑金属導体と適合し、N2など卑金属を
酸化させないような雰囲気中で焼成できる絶縁ペ
ーストも開発されている。 N2中で焼成できる絶縁ペーストは、例えば次
のようなものが知られている。特開昭47−9633号
公報は、PbOを含まない部分結晶性ガラスが開示
されており、特公昭59−3419号公報にはやはり
PbOを含まない硼珪酸ガラスとアルミニウム酸化
物を主成分とし、銅導体と適合する厚膜多層用絶
縁ペーストが記載されている。特公昭59−14203
号公報にはガラスと結晶性多成分酸化物又はその
前駆体とからなる誘電体組成物が、特開昭55−
130009号公報には珪酸亜鉛とアルカリ土類珪酸塩
とからなるガラス質相と酸化亜鉛含有セラミツク
相を主成分とするペーストが、特公昭59−27119
号公報には部分失透性硼珪酸バリウムマグネシウ
ムガラスとピンホール減少用成分とからなる絶縁
ペーストがそれぞれ開示されている。更に特開昭
55−38882号公報には活性成分としての酸化アル
ミニウムと、ガラス、及び酸化剤として焼成中低
原子価に還元され得る金属酸化物、例えばCe酸
化物、Pr6O11、PrO2、希土類酸化物などから構
成される絶縁ペーストが示されている。これらの
絶縁ペーストはいずれも800℃〜1000℃程度の比
較的高温で焼成する必要がある。 ところで卑金属系厚膜多層回路は、導体層と絶
縁層のみで構成される場合と、厚膜抵抗体や厚膜
コンデンサを組込んで多層化する場合があるが、
後者において、特に抵抗材料にN2中焼成が可能
でかつ実用上満足いくような優れた特性を有する
ものがないため、空気中焼成タイプで従来最も一
般的に使用されている酸化ルテニウム系抵抗ペー
ストが代用される。しかしこの抵抗体は、非酸化
性雰囲気中で700℃以上の高温で再焼成を行うと
還元されて電気特性が変化するので、抵抗体を焼
付形成した後に導体ペーストや絶縁ペーストを
N2中において高温で焼付けして多層化を行うの
が極めて困難であつた。抵抗体にダメージを与え
ない程度の低温で前述の絶縁ペーストを焼付けす
ると、絶縁性が不充分であつたり、接着強度が劣
るなど全く実用に耐えない。 特開昭58−2093号公報には、活性成分としての
セラミツク充填材と、PbO−SiO2−Al2O3ガラス
及び酸化度2以上の酸化鉛を主成分とし、非酸化
性雰囲気中600℃以下の温度で焼成される絶縁ペ
ーストが開示されている。しかしここに示された
ガラスペーストをアルミナ基板上に焼付けると、
絶縁性が充分でなく、又耐水性にも劣る欠点があ
る。 又CdO高含有ガラスを使用した低温焼成タイプ
のガラスペーストも知られているが、空孔が多
く、又絶縁抵抗、耐湿性、耐水性ともに十分でな
く、現在まで実用上満足できる性能を有するN2
中低温焼成用絶縁ペーストは得られていない。 発明が解決しようとする問題点 本発明の目的は、N2などの非酸化性雰囲気中
において、低温、例えば650℃以下の温度で焼成
でき、従つて酸化ルテニウム抵抗の特性に影響を
与えないですみ、しかも絶縁性、機械的強度など
の電気的・物理的特性の優れた絶縁ペーストを得
ることにある。 問題点を解決するための手段 本発明者等はガラスの組成を検討することによ
つて従来の問題を解決し、650℃以下の低温で焼
成しても優れた特性を有する絶縁層を形成し得る
ガラスペーストの開発に成功した。 即ち本発明は、A.重量基準で SiO2 27〜36% Al2O3 1〜3% B2O3 5〜15% PbO 45〜52% CaF2 1〜3% ZnO 1〜3% からなるガラス粉末35〜90重量%と、B.酸化物
フイラー10〜35重量%と、C.酸化剤0〜30重量%
とを有機ビヒクル中に分散させてなる絶縁ペース
トである。 作 用 本発明の絶縁ペーストは、ガラス成分として軟
化点の低いPbOを多く含む硼珪酸鉛アルミニウム
ガラスを用い、比較的多量にSiO2を配合するこ
とにより流動性の制御を行つて、焼成時の急激な
粘度低下による導体層からの導電成分の移動とそ
れによる絶縁不良を阻止し、かつSiO2を多量に
含有することに起因する軟化点の上昇及び耐水性
の低下をCaF2及びZnOを配合することにより防
止したことが特徴である。 ガラスの構成成分中、SiO2は27重量%未満で
は軟化点が下がりすぎ、適切な粘度特性が得られ
ない。36重量%を越えると軟化温度が高くなりす
ぎ、低温焼成では高い膜強度が得られなくなる。 Al2O3は失透防止及び耐候性の向上の目的で使
用する。1重量%未満ではこの効果が限われず、
3重量%を越えると融点が高くなつて好ましくな
い。 B2O3は5重量%より少ないと軟化点が高くな
りすぎ、15重量%より多いと軟化点が低すぎる。 CaF2は融剤として軟化点上昇を抑える目的で
用いられる。1重量%未満では効果がなく、3重
量%より多いと失透するので好ましくない。 ZnOは化学的耐久性、特に耐水性向上の目的で
配合する。配合量が1重量%より少ないとこの効
果が弱く、3重量%を越えると失透し易いので好
ましくない。 ガラス粉末はペーストの全無機質成分中35〜90
重量%使用する。 酸化物フイラーは、焼成膜の流動性の制御及び
有機ビヒクルの燃焼残渣であるカーボンを焼成中
に膜からスムーズに除去するために、ペーストの
全無機質成分中10〜35重量%の範囲で配合する。
10重量%未満では膜がガラス質になつて再焼成時
に流動し易いため、パターンが拡がつたり、電極
成分と相互作用して電極のカーリングや半田付け
性不良を起こしたり、絶縁層の絶縁不良などのト
ラブルを生じ、又脱カーボンも不充分となる。35
重量%を越えると膜強度が弱く、脆くなるので好
ましくない。酸化物としては例えば酸化アルミニ
ウム、酸化マグネシウム、酸化ランタン、酸化チ
タンなどこの種の絶縁ペーストに一般的に用いら
れているものが使用できる。 酸化剤は非酸化性雰囲気中で焼成する際、有機
ビヒクルの完全燃焼を促進し、カーボン残渣を残
さないために配合されるもので、たとえば従来公
知のPbO2、Pb3O4、CeO2、PrO2、Pr6O11
TeO3、Co3O4、Nd2O3、SrO2などがあげられる。
とくにPbO2の効果が大きい。配合割合は全無機
質成分中0〜30重量%で、ガラスの組成や焼成条
件によつては全く配合しなくてもよいが、通常5
重量%以上用いることが望ましい。 無機成分の配合比は、好ましくはガラス粉末55
〜70重量%、酸化物フイラー15〜30重量%と、酸
化剤10〜25重量%である。 尚、各成分とも径10μm以下の微細粉末を用い
ることが望ましい。 有機ビヒクルは通常の厚膜ペーストに使用され
るものであればいかなるものでもよく、樹脂、溶
剤、可塑剤、その他の添加剤を適宜選択して用い
る。樹脂分としては特にエチルセルロース、エチ
ルヒドロキシエチルセルロース、ニトロセルロー
ス、メタクリレート樹脂、ブチラール樹脂など、
低酸素分圧の雰囲気中において比較的低温で完全
燃焼しやすいものを用いるのがよい。 実施例 次に実施例をあげて本発明を具体的に説明す
る。尚実施例中%及び部はすべて重量基準であ
る。 実施例 1〜5 ガラス原料粉末を表1の組成になるよう秤量、
混合してルツボに入れ、電気炉中1300〜1450℃で
1時間加熱溶融した。溶融物を水中に投入して急
冷、粉砕し、平均粒径3μmのガラス粉末を製造
した。 次にこの粉末と平均粒径0.5μmのAl2O3粉末及
びPbO2粉末とを表1に示した割合で混合し、有
機ビヒクルとしてエチルセルロースの20%ブチル
カルビトール溶液をガラス、Al2O3、PbO2の合
計100部に対して10部加え、更に粘度調整のため
ブチルカルビトールとジブチルフタレートを適当
量添加して混練し、それぞれ絶縁ベーストを製造
した。 1インチ×1インチの96%アルミナ基板上に、
下部導体として銅ペーストを幅05mm、間隔2mm、
5本の櫛状パターンにスクリーン印刷し、N2
囲気中600℃で焼成した。この上に上記絶縁ペー
ストを印刷し、150℃で乾燥後、N2中最高温度
600℃で焼成を行つて膜厚40μmの絶縁層を形成
した。次いでその上に銅ペーストを下部電極パタ
ーンと直交するように同様な櫛状パターンに印刷
し、下部電極と同様に焼成してテストサンプルを
作成した。 それぞれのテストサンプルに対して次の試験を
行い、結果を表1に併せて示した。 絶縁抵抗の測定: 上部・下部導体間に50Vの直流電圧を印加
し、絶縁抵抗を測定した。 耐湿負荷寿命試験: 60℃相対湿度95%の高温高湿槽中で50Vの直
流電圧を100時間連続的に印加した後サンプル
を取出して室温で1時間放置し、絶縁抵抗を測
定した。
Industrial Application Field The present invention is a thick film glass paste for forming an insulating layer that can be fired at a relatively low temperature in a non-oxidizing atmosphere, and is particularly useful for producing an insulating layer of a thick film multilayer circuit using a base metal conductor. related to insulating glass paste. BACKGROUND OF THE INVENTION One method of manufacturing multilayer circuits is to print and bake a thick film conductor paste as a first conductor layer on a fired ceramic substrate, and then print an insulating paste to separate and insulate the upper and lower conductors. There is a method in which conductor layers and insulating layers are alternately laminated in a thick film method by sequentially repeating the steps of firing and forming a second conductor layer thereon. As an insulating paste used in such thick film multilayer circuits, a glass paste containing an oxide filler or a partially crystalline glass paste is generally used to strengthen the film structure. In recent years, there has been a strong desire in the electronics industry to employ highly reliable base metal systems. Regarding thick film conductors, Ag/Pd, Au,
The transition from noble metals such as Ag/Pt to base metals such as Cu and Ni is being considered, but along with this, there is a need for new materials that are compatible with these base metal conductors and are fired in an atmosphere that does not oxidize the base metals such as N2 . An insulating paste that can be used has also been developed. For example, the following insulating pastes that can be fired in N2 are known. JP-A No. 47-9633 discloses a partially crystalline glass that does not contain PbO, and JP-A No. 59-3419 also discloses a partially crystalline glass that does not contain PbO.
An insulating paste for thick film multilayers, which is based on PbO-free borosilicate glass and aluminum oxide and is compatible with copper conductors, is described. Tokuko Showa 59-14203
The publication discloses a dielectric composition consisting of glass and a crystalline multicomponent oxide or its precursor, disclosed in Japanese Patent Application Laid-Open No. 1982-
Publication No. 130009 describes a paste whose main components are a vitreous phase consisting of zinc silicate and alkaline earth silicate and a ceramic phase containing zinc oxide.
The publication discloses an insulating paste consisting of partially devitrified barium magnesium borosilicate glass and a pinhole reducing component. In addition, Tokukai Akira
No. 55-38882 discloses aluminum oxide and glass as active ingredients, and metal oxides that can be reduced to low valence during firing as oxidizing agents, such as Ce oxide, Pr 6 O 11 , PrO 2 , rare earth oxides. An insulating paste composed of, etc. is shown. All of these insulating pastes need to be fired at a relatively high temperature of about 800°C to 1000°C. By the way, base metal thick film multilayer circuits may be composed of only conductor layers and insulating layers, or may be multilayered by incorporating thick film resistors and thick film capacitors.
In the latter case, there is no resistance material that can be fired in N2 and has excellent properties that are practically satisfactory, so ruthenium oxide-based resistance paste, which is the most commonly used type of air-fired type, has been used. is substituted. However, if this resistor is re-fired at a high temperature of 700°C or higher in a non-oxidizing atmosphere, it will be reduced and its electrical properties will change, so conductive paste or insulating paste should be applied after baking the resistor.
It was extremely difficult to create multiple layers by baking at high temperatures in N 2 . If the above-described insulating paste is baked at a low temperature that does not damage the resistor, the insulating properties will be insufficient and the adhesive strength will be poor, making it completely unusable. JP-A No. 58-2093 discloses that the main ingredients are ceramic filler as an active ingredient, PbO-SiO 2 -Al 2 O 3 glass and lead oxide with an oxidation degree of 2 or more, and are heated at 600°C in a non-oxidizing atmosphere. An insulating paste is disclosed that is fired at the following temperatures: However, when the glass paste shown here is baked onto an alumina substrate,
It has the drawbacks of insufficient insulation and poor water resistance. In addition, a low-temperature firing type glass paste using CdO-rich glass is known, but it has many pores and has insufficient insulation resistance, moisture resistance, and water resistance. 2
Insulating paste for medium and low temperature firing has not been obtained. Problems to be Solved by the Invention The object of the invention is to be able to sinter in a non-oxidizing atmosphere such as N 2 at a low temperature, e.g. below 650°C, and therefore not affect the properties of the ruthenium oxide resistor. The purpose of the present invention is to obtain an insulating paste with excellent electrical and physical properties such as insulation and mechanical strength. Means for Solving the Problems The present inventors solved the conventional problems by examining the composition of glass, and formed an insulating layer that has excellent properties even when fired at a low temperature of 650°C or less. succeeded in developing a glass paste. That is, the present invention consists of: A. On a weight basis, SiO 2 27-36% Al 2 O 3 1-3% B 2 O 3 5-15% PbO 45-52% CaF 2 1-3% ZnO 1-3% 35-90% by weight of glass powder; B. 10-35% by weight of oxide filler; C. 0-30% by weight of oxidizing agent.
This is an insulating paste made by dispersing the above in an organic vehicle. Function The insulating paste of the present invention uses lead aluminum borosilicate glass containing a large amount of PbO, which has a low softening point, as a glass component, and controls fluidity by blending a relatively large amount of SiO 2 . Contains CaF 2 and ZnO to prevent the migration of conductive components from the conductor layer due to a sudden drop in viscosity and the resulting insulation failure, and to prevent the increase in softening point and decrease in water resistance caused by containing a large amount of SiO 2 . It is characterized by the fact that it was prevented by doing this. Among the constituent components of glass, if SiO 2 is less than 27% by weight, the softening point is too low and appropriate viscosity characteristics cannot be obtained. When it exceeds 36% by weight, the softening temperature becomes too high and high film strength cannot be obtained by low-temperature firing. Al 2 O 3 is used for the purpose of preventing devitrification and improving weather resistance. This effect is not limited if it is less than 1% by weight,
If it exceeds 3% by weight, the melting point will become high, which is not preferable. If B 2 O 3 is less than 5% by weight, the softening point will be too high, and if it is more than 15% by weight, the softening point will be too low. CaF 2 is used as a flux to suppress the rise in softening point. If it is less than 1% by weight, there is no effect, and if it is more than 3% by weight, devitrification occurs, which is not preferable. ZnO is added to improve chemical durability, especially water resistance. If the amount is less than 1% by weight, this effect is weak, and if it exceeds 3% by weight, devitrification tends to occur, which is not preferable. Glass powder accounts for 35 to 90% of the total mineral content of the paste.
Use % by weight. The oxide filler is mixed in a range of 10 to 35% by weight of the total inorganic components of the paste in order to control the fluidity of the fired film and to smoothly remove carbon, which is a combustion residue of the organic vehicle, from the film during firing. .
If it is less than 10% by weight, the film becomes glassy and tends to flow during re-firing, causing the pattern to spread, interacting with the electrode components, causing curling of the electrode, poor solderability, and the insulation of the insulating layer. Problems such as defects may occur, and decarbonization may also become insufficient. 35
If it exceeds % by weight, the film strength will be weak and it will become brittle, which is not preferable. As the oxide, those commonly used in this type of insulation paste, such as aluminum oxide, magnesium oxide, lanthanum oxide, and titanium oxide, can be used. The oxidizing agent is blended to promote complete combustion of the organic vehicle and leave no carbon residue during firing in a non-oxidizing atmosphere, such as conventionally known PbO 2 , Pb 3 O 4 , CeO 2 , PrO2 , Pr6O11 ,
Examples include TeO 3 , Co 3 O 4 , Nd 2 O 3 and SrO 2 .
The effect of PbO 2 is particularly large. The blending ratio is 0 to 30% by weight based on the total inorganic components, and depending on the glass composition and firing conditions, it may not be blended at all, but it is usually 5% by weight.
It is desirable to use % by weight or more. The blending ratio of inorganic components is preferably glass powder 55
~70% by weight, 15-30% by weight oxide filler, and 10-25% by weight oxidizing agent. Note that it is desirable to use fine powder with a diameter of 10 μm or less for each component. Any organic vehicle may be used as long as it is used in ordinary thick film pastes, and resins, solvents, plasticizers, and other additives may be appropriately selected and used. In particular, resin components include ethyl cellulose, ethyl hydroxyethyl cellulose, nitrocellulose, methacrylate resin, butyral resin, etc.
It is preferable to use a material that can easily burn completely at a relatively low temperature in an atmosphere with a low oxygen partial pressure. EXAMPLES Next, the present invention will be specifically explained with reference to Examples. In the examples, all percentages and parts are based on weight. Examples 1 to 5 Glass raw material powder was weighed to have the composition shown in Table 1,
The mixture was placed in a crucible, and heated and melted at 1300 to 1450°C for 1 hour in an electric furnace. The melt was poured into water, rapidly cooled, and pulverized to produce glass powder with an average particle size of 3 μm. Next, this powder was mixed with Al 2 O 3 powder and PbO 2 powder with an average particle size of 0.5 μm in the proportions shown in Table 1, and a 20% butyl carbitol solution of ethyl cellulose was added to glass and Al 2 O 3 as an organic vehicle. , PbO 2 were added in an amount of 10 parts to a total of 100 parts, and appropriate amounts of butyl carbitol and dibutyl phthalate were added to adjust the viscosity and kneaded to produce insulation bases. On a 1 inch x 1 inch 96% alumina substrate,
Use copper paste as the lower conductor with a width of 05 mm and a spacing of 2 mm.
A five-comb pattern was screen printed and fired at 600 °C in a N2 atmosphere. Print the above insulating paste on top of this, dry it at 150℃, and then heat it to the highest temperature in N2 .
Firing was performed at 600°C to form an insulating layer with a thickness of 40 μm. Next, copper paste was printed on it in a similar comb-like pattern perpendicular to the lower electrode pattern, and fired in the same manner as the lower electrode to create a test sample. The following tests were conducted on each test sample, and the results are also shown in Table 1. Measurement of insulation resistance: A DC voltage of 50V was applied between the upper and lower conductors to measure insulation resistance. Humidity load life test: A DC voltage of 50V was continuously applied for 100 hours in a high temperature and high humidity chamber at 60°C and relative humidity of 95%, and then the sample was taken out and left at room temperature for 1 hour to measure insulation resistance.

【表】 比較例 1〜4 表2に示す組成のガラス粉末、酸化物フイラ
ー、PbO2粉末を所定の割合で混合し、有機ビヒ
クル中に均一に分散させて得た絶縁ペーストを用
い、実施例と同様に性能試験を行つた。各成分の
配合量及び試験結果を併せて表2に示す。
[Table] Comparative Examples 1-4 Examples Performance tests were conducted in the same manner. Table 2 shows the blending amount of each component and the test results.

【表】【table】

【表】 表1と表2を比較すると、本発明の絶縁ペース
トはいずれも比較例に示したものより絶縁性、耐
湿性ともにはるかに優れていることがわかる。尚
比較例1及び2は膜強度が弱く、脆いので多層回
路用には不適であつた。 効 果 本発明の絶縁ペーストはN2などの非酸化性雰
囲気中、650℃以下の低温で焼成しても、カーボ
ンの残留のない高絶縁性の連続膜を形成すること
ができる。又耐湿性、耐水性に優れており、多層
回路の層間絶縁膜として極めて良好な特性を示
す。従つて卑金属導体を使用する厚膜多層回路の
絶縁層形成に極めて有用である。しかも650℃以
下の低温で焼成できるので、酸化ルテニウム系抵
抗体を形成した後に絶縁層を非酸化性雰囲気中で
焼付ける場合でも、抵抗特性を悪化させることが
ない。 更に本発明のペーストは導体間の絶縁の他、回
路保護被覆用やアンダーグレーズとしても使用す
ることができる。
[Table] Comparing Tables 1 and 2, it can be seen that the insulating pastes of the present invention are both far superior in insulation properties and moisture resistance to those shown in the comparative examples. Note that Comparative Examples 1 and 2 had low film strength and were brittle, so they were unsuitable for multilayer circuits. Effects The insulating paste of the present invention can form a highly insulating continuous film without residual carbon even when fired at a low temperature of 650° C. or lower in a non-oxidizing atmosphere such as N 2 . It also has excellent moisture resistance and water resistance, and exhibits extremely good properties as an interlayer insulating film for multilayer circuits. Therefore, it is extremely useful for forming insulating layers of thick film multilayer circuits using base metal conductors. Moreover, since it can be fired at a low temperature of 650° C. or lower, the resistance characteristics will not deteriorate even if the insulating layer is baked in a non-oxidizing atmosphere after forming the ruthenium oxide resistor. Further, the paste of the present invention can be used not only for insulation between conductors but also for circuit protection coating and underglaze.

Claims (1)

【特許請求の範囲】 1 A 重量基準で SiO2 27〜36% Al2O3 1〜3% B2O3 5〜15% PbO 45〜52% CaF2 1〜3% ZnO 1〜3% からなるガラス粉末35〜90重量%と、 B 酸化物フイラー10〜35重量%と、 C 酸化剤0〜30重量%と を有機ビヒクル中に分散させてなる絶縁ペース
ト。 2 酸化物フイラーが酸化アルミニウム、酸化マ
グネシウム、酸化ランタン、酸化チタンからなる
群から選ばれた1種又は2種以上である特許請求
の範囲第1項記載の絶縁ペースト。 3 酸化剤がPbO2、Pb3O4、CeO2、PrO2
Pr6O11、TeO3、Co3O4、Nd2O3、SrO2からなる
群から選ばれた1種又は2種以上の粉末である特
許請求の範囲第1項又は第2項記載の絶縁ペース
ト。 4 A.ガラス粉末が55〜70重量%、B.酸化物フ
イラーが15〜30重量%、C.酸化剤が10〜25重量%
である特許請求の範囲第1項乃至第3項のいずれ
かに記載の絶縁ペースト。
[Claims] 1 A: SiO 2 27-36% Al 2 O 3 1-3% B 2 O 3 5-15% PbO 45-52% CaF 2 1-3% ZnO 1-3% An insulating paste comprising: 35-90% by weight of a glass powder, B: 10-35% by weight of an oxide filler, and C: 0-30% by weight of an oxidizing agent, dispersed in an organic vehicle. 2. The insulating paste according to claim 1, wherein the oxide filler is one or more selected from the group consisting of aluminum oxide, magnesium oxide, lanthanum oxide, and titanium oxide. 3 The oxidizing agent is PbO 2 , Pb 3 O 4 , CeO 2 , PrO 2 ,
The powder according to claim 1 or 2, which is one or more powders selected from the group consisting of Pr 6 O 11 , TeO 3 , Co 3 O 4 , Nd 2 O 3 , and SrO 2 . insulation paste. 4 A. 55-70% by weight of glass powder, B. 15-30% by weight of oxide filler, C. 10-25% by weight of oxidizing agent.
An insulating paste according to any one of claims 1 to 3.
JP14602885A 1985-07-03 1985-07-03 Insulating paste Granted JPS628404A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14602885A JPS628404A (en) 1985-07-03 1985-07-03 Insulating paste

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14602885A JPS628404A (en) 1985-07-03 1985-07-03 Insulating paste

Publications (2)

Publication Number Publication Date
JPS628404A JPS628404A (en) 1987-01-16
JPH056281B2 true JPH056281B2 (en) 1993-01-26

Family

ID=15398471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14602885A Granted JPS628404A (en) 1985-07-03 1985-07-03 Insulating paste

Country Status (1)

Country Link
JP (1) JPS628404A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0717404B2 (en) * 1986-05-02 1995-03-01 旭硝子株式会社 Composition for sealing
JP2812336B2 (en) * 1988-11-01 1998-10-22 旭硝子株式会社 Paste composition

Also Published As

Publication number Publication date
JPS628404A (en) 1987-01-16

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