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JPH0563009B2 - - Google Patents
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JPH0563009B2 - - Google Patents

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Publication number
JPH0563009B2
JPH0563009B2 JP61030790A JP3079086A JPH0563009B2 JP H0563009 B2 JPH0563009 B2 JP H0563009B2 JP 61030790 A JP61030790 A JP 61030790A JP 3079086 A JP3079086 A JP 3079086A JP H0563009 B2 JPH0563009 B2 JP H0563009B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
capacitor
anode body
film
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61030790A
Other languages
Japanese (ja)
Other versions
JPS62189714A (en
Inventor
Kenji Tamamitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Platforms Ltd
Original Assignee
Nitsuko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitsuko Corp filed Critical Nitsuko Corp
Priority to JP61030790A priority Critical patent/JPS62189714A/en
Publication of JPS62189714A publication Critical patent/JPS62189714A/en
Publication of JPH0563009B2 publication Critical patent/JPH0563009B2/ja
Granted legal-status Critical Current

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  • Formation Of Insulating Films (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野〕 本発明は、固体電解コンデンサに係り、特に固
体電解質のポリマー膜を半導体層とするコンデン
サにおける半導体層の形成方法に関する。 〔従来の技術〕 従来、アルミニウム、タンタルなどの弁作用の
ある金属を陽極体とする固体電解コンデンサにお
いて、半導体層の固体電解質としては無機半導体
の2酸化マンガンMnO2および有機半導体の
TCNQ(テトラシアノキノジメタン)錯塩を用い
たものが周知である。上記2種の固体電解質は、
ともに浸漬・加熱固化のくり返しにより作成され
る。このようなくり返しを行なうので、工程が複
雑であり、また半導体層の膜厚などの制御が難し
い。複雑な工程で生産性が低いので小容量のコン
デンサの製作には難点があるとともに、大容量の
コンデンサの製作では、高温で加熱するので、熱
歪の影響が大きく良好な半導体層を得ることがで
きなかつた。上記2種の固体電解質は浸漬し、相
当な高温で加熱固化するものであるから、陽極体
表面にレジスト部材でパターンを設け局所的に半
導体層を形成するようなプロセスは困難である。
また固体電解質は粒状体で、固体電解質その他を
形成後チツプに分離切断するようなプロセスも実
行できない。このように、プロセスとしての自由
度が低く、大きなパターンを形成しておいて、チ
ツプに分解する方法はとれず、中容量のコンデン
サにしか実現できないのが現状である。 しかし、固体電解質として、導電性のポリマー
膜を用いれば、上記問題点はほとんど解決され、
プロセス選択の自由度が大きく適当なプロセスに
より、チツプ型の小容量コンデンサから大容量コ
ンデンサまで範囲の広い製品を製作することがで
きる。 〔発明が解決しようとする問題点〕 ポリマー膜の形成は、複素環式化合物であるピ
ロール、チオフエンなどの重合体を電解酸化重合
により形成させるが、電解酸化重合は金・白金な
どの不活性な金属表面にはよく形成できるが、陽
極体への形成は良くない。この理由は、明確でな
いが、以下のように推察される。電解酸化重合反
応は、弁作用のある金属の陽極体表面に設けた絶
縁性の陽極酸化膜を介し行なうが、重合反応と同
時に陽極体表面の酸化反応も生じ、両方の反応の
競合により、重合反応においてポリマーが低分子
量のときに、陽極体表面付近にとどまれなくて電
解液中に拡散する効があるためと考えられる。 なお、半導体層形成の良・不良は、直接的には
判断できないので、コンデンサ特性を検証して、
耐圧、等価直列抵抗によつて判断される。 本発明の目的は、上記欠点を除去し、表面を陽
極酸化した弁作用のある金属の陽極体上に、コン
デンサとして良好な特性を与える固体電解質のポ
リマー膜を形成する方法を提供することにある。 〔問題点を解決するための手段〕 本発明では、固体電解質のポリマー膜として
は、複素環式化合物であるピロールとその特定の
誘導体を用いる。すなわち下記の複素環式化合物 (X:H,−CH3または−CH2CH3 Y:H,−CH3または−CH2CH3) および支持塩を含む電解液中で、−25℃ないし
−45℃の温度範囲内で電解酸化重合を行ない、固
体電解質のポリマー膜を形成させる。 〔作用〕 後述する実施例で説明するように、上記手段で
形成した半導体層を用いたコンデンサは良好な電
気的特性を与える。これは、電解液を低温にする
ことにより、陽極体表面での単量体もしくは低重
合体の分子運動が緩やかになり、液中に拡散しな
いで、表面付近にとどまるため、ポリマー膜の形
成が順調に行なわれ、均一な良好な半導体層とな
るためと推量される。 〔実施例〕 以下、図面を参照して、本発明の実施例につき
説明する。以下の実施例では、陽極体としてアル
ミニウムを用い、表面を粗面化したアルミニウム
エツチド箔を10mm×50mmに切断し、アジピン酸系
化成液中で第1表に示す各電圧で定電圧化成を行
ない、前記箔表面に陽極酸化膜を形成する。
[Industrial Field of Application] The present invention relates to a solid electrolytic capacitor, and particularly to a method for forming a semiconductor layer in a capacitor in which the semiconductor layer is a polymer film of a solid electrolyte. [Prior Art] Conventionally, in a solid electrolytic capacitor whose anode body is made of a valve-acting metal such as aluminum or tantalum, inorganic semiconductor manganese dioxide MnO 2 and organic semiconductor manganese dioxide MnO 2 are used as the solid electrolyte of the semiconductor layer.
A method using TCNQ (tetracyanoquinodimethane) complex salt is well known. The above two types of solid electrolytes are
Both are created by repeated soaking and heating solidification. Since such a process is repeated, the process is complicated and it is difficult to control the thickness of the semiconductor layer. Manufacturing small-capacity capacitors is difficult because the process is complicated and productivity is low, and when manufacturing large-capacity capacitors, heating is done at high temperatures, so the effect of thermal distortion is large and it is difficult to obtain a good semiconductor layer. I couldn't do it. Since the above two types of solid electrolytes are immersed and solidified by heating at a considerably high temperature, it is difficult to carry out a process in which a pattern is formed on the surface of the anode body using a resist member and a semiconductor layer is locally formed.
Furthermore, since the solid electrolyte is a granular material, a process of separating and cutting the solid electrolyte into chips after forming it cannot be carried out. As described above, the degree of freedom as a process is low, and it is not possible to form a large pattern and then disassemble it into chips, and currently only medium-capacity capacitors can be realized. However, if a conductive polymer membrane is used as the solid electrolyte, most of the above problems can be solved.
With a large degree of freedom in process selection and appropriate processes, it is possible to manufacture a wide range of products from chip-type small capacitance capacitors to large capacitance capacitors. [Problems to be solved by the invention] Polymer films are formed by electrolytic oxidative polymerization of heterocyclic compounds such as pyrrole and thiophene. Although it can be formed well on metal surfaces, it is not good to form it on the anode body. Although the reason for this is not clear, it is inferred as follows. The electrolytic oxidation polymerization reaction is carried out via an insulating anodic oxide film provided on the surface of the metal anode body, which has a valve effect.At the same time as the polymerization reaction, an oxidation reaction occurs on the anode body surface, and due to competition between both reactions, polymerization This is thought to be due to the effect that when the polymer has a low molecular weight during the reaction, it cannot stay near the anode surface and diffuses into the electrolyte. Note that it is not possible to directly determine whether the semiconductor layer formation is good or bad, so by verifying the capacitor characteristics,
Determined by withstand voltage and equivalent series resistance. SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks and to provide a method for forming a polymer film of a solid electrolyte that provides good characteristics as a capacitor on a valve metal anode body whose surface is anodized. . [Means for Solving the Problems] In the present invention, pyrrole, which is a heterocyclic compound, and a specific derivative thereof are used as the polymer membrane of the solid electrolyte. That is, the following heterocyclic compounds (X: H, -CH 3 or -CH 2 CH 3 Y: H, -CH 3 or -CH 2 CH 3 ) and a supporting salt within the temperature range of -25°C to -45°C. Electrolytic oxidation polymerization is performed to form a solid electrolyte polymer membrane. [Operation] As will be explained in the examples below, a capacitor using a semiconductor layer formed by the above method provides good electrical characteristics. This is because by lowering the temperature of the electrolyte, the molecular movement of monomers or low polymers on the surface of the anode body slows down, and they do not diffuse into the solution but remain near the surface, which prevents the formation of a polymer film. It is presumed that this is because the process is carried out smoothly and a good, uniform semiconductor layer is obtained. [Example] Hereinafter, an example of the present invention will be described with reference to the drawings. In the following example, aluminum was used as the anode body. Aluminum etched foil with a roughened surface was cut into 10 mm x 50 mm pieces, and constant-voltage chemical conversion was performed in an adipic acid-based chemical solution at each voltage shown in Table 1. Then, an anodic oxide film is formed on the surface of the foil.

【表】 次に、たとえばアセトニトリル1を溶媒とし
て、ピロール0.05mol(3.0g)と支持塩のアンモ
ニウムボロジサリチレート約0.02mol(6.0g)と
を溶解した電解液中でポリピロール膜の陽極酸化
重合を行なう。第1図はこの工程を行なう状況を
図式的に示したもので、酸化処理をしたアルミニ
ウムエツチド箔1を前記電解液2に含浸し、電池
4の陽極に接続するとともに、アルミニウムエツ
チド箔1の両側に対向して2枚のステンレス板3
を配置し、電池4の陰極に接続する。電解液2は
−40℃に冷却してこの工程中一定に保つ。 重合反応は、約30mAの電流を連続して、10分
間流して行なう。前記反応を終えて、ポリピロー
ル膜に被覆された箔を純水で洗浄した後、再化成
を同じくアジピン酸系化成液中で第1表の化成電
圧の約3/4の電圧で行なう。これは酸化膜に欠陥
部分ができることがあるので、そのような事故を
なくすためである。 次に、再化成を終えた箔を純水で洗浄、乾燥し
真空蒸着法により銀を蒸着し、銀ペーストで陰極
リードを引出しコンデンサとする。第2図がコン
デンサの断面図で、6がアルミニウムエツチド箔
で先端が陽極リードになつている。コンデンサ構
成要素部は、アルミニウム酸化膜9、ポリピロー
ル膜8、銀蒸着膜7で形成され、銀ペースト10
によつて陰極リード5が接続される。 コンデンサの電気的特性を第2表に示す。この
データは、Capが単位面積当りの容量(μF/
cm2)、損失角tanδが測定周波数120Hz、印加電圧
1.0v(AC)の測定値、漏れ電流が化成電圧の1/2
で、2分間印加したときの値、ESRが等価直列
抵抗で100KHzの測定値である。
[Table] Next, anodic oxidation polymerization of a polypyrrole film was carried out in an electrolytic solution in which 0.05 mol (3.0 g) of pyrrole and about 0.02 mol (6.0 g) of ammonium borodisalicylate as a supporting salt were dissolved in acetonitrile 1 as a solvent. Do this. FIG. 1 schematically shows the situation in which this process is carried out. An oxidized aluminum etched foil 1 is impregnated with the electrolyte 2, connected to the anode of a battery 4, and the aluminum etched foil 1 is impregnated with the electrolytic solution 2. two stainless steel plates 3 facing each other on both sides of
and connect it to the cathode of battery 4. Electrolyte 2 is cooled to -40°C and kept constant during this process. The polymerization reaction is carried out by continuously flowing a current of about 30 mA for 10 minutes. After completing the reaction, the foil coated with the polypyrrole film is washed with pure water, and then reconversion is carried out in the same adipic acid-based conversion solution at a voltage that is about 3/4 of the conversion voltage shown in Table 1. This is to prevent defects from occurring in the oxide film, and to prevent such accidents. Next, the reconstituted foil is washed with pure water, dried, and silver is deposited by vacuum evaporation, and a cathode lead is drawn out with silver paste to form a capacitor. Figure 2 is a cross-sectional view of the capacitor, and 6 is an aluminum etched foil whose tip becomes an anode lead. The capacitor component part is formed of an aluminum oxide film 9, a polypyrrole film 8, a silver vapor deposited film 7, and a silver paste 10.
The cathode lead 5 is connected by. The electrical characteristics of the capacitor are shown in Table 2. This data indicates that Cap is the capacitance per unit area (μF/
cm 2 ), the loss angle tan δ is measured at a frequency of 120 Hz, and an applied voltage
Measured value of 1.0v (AC), leakage current is 1/2 of formation voltage
The value when applied for 2 minutes, ESR is equivalent series resistance and is the measured value at 100KHz.

【表】 第3図は周波数・インピーダンス(f−Z)特
性を示すもので、第2表の20v化成品のデータで
ある。純然たるキヤパシタンスとして求めた理想
ラインと実測値とほぼ300KHzまで合致する。従
来の方法による容量値の近い、定格電圧10vで
Cap22μFのアルミニウム電解コンデンサと比較
すると、改善効果が顕著である。 上記実施例は電解液温度が約−40℃であつた
が、−30℃とし、他の工程をすべて同一としてコ
ンデンサを製作した第2の実施例の結果を第3表
に示す。測定特性は同一であり、ほぼ同様な結果
を得ている。 なお、複素環式化合物で、3位、4位にメチル
基などを導入すると、重合反応位が2、5位に固
定され、得られたポリマーの分子構造は導電性が
良くなる。
[Table] Figure 3 shows the frequency/impedance (f-Z) characteristics, and is the data for the 20V chemical products in Table 2. The ideal line determined as pure capacitance and the actual measured value match up to approximately 300KHz. At a rated voltage of 10V with a similar capacity value using the conventional method
The improvement effect is remarkable when compared with an aluminum electrolytic capacitor with a cap of 22μF. In the above example, the electrolyte temperature was about -40°C, but Table 3 shows the results of a second example in which a capacitor was manufactured at -30°C and all other steps were the same. The measurement characteristics are the same, and almost the same results are obtained. In addition, when a methyl group or the like is introduced into the 3rd and 4th positions of a heterocyclic compound, the polymerization reaction positions are fixed at the 2nd and 5th positions, and the molecular structure of the resulting polymer becomes more conductive.

【表】 〔発明の効果〕 以上、詳しく説明したように、弁作用のある金
属を陽極体とし、陽極体の酸化膜表面に、複素環
式化合物のピロールあるいはピロール誘導体を含
む電解液中で低温において電解酸化重合反応によ
り固体電解質のポリマー膜を形成し、このポリマ
ー膜を半導体層として良好な特性のコンデンサを
得ることができる。 電解酸化重合は、−25℃〜−45℃の温度範囲で
行なうことで特性のよいポリマー膜を得る。温度
範囲については温度が下限より低温になると、反
応速度が遅くなり、上限より高温になると、ポリ
マー膜形成がさまたげられる。なお、実施例の電
解液中の支持塩としてアンモニウムボロジサリチ
レートを用いたが、一般的によく用いられるもの
であれば、どのようなものでもよい。
[Table] [Effects of the Invention] As explained in detail above, a metal with a valve action is used as an anode body, and the oxide film surface of the anode body is exposed to a low temperature in an electrolytic solution containing the heterocyclic compound pyrrole or a pyrrole derivative. A polymer film of a solid electrolyte is formed by an electrolytic oxidation polymerization reaction, and a capacitor with good characteristics can be obtained by using this polymer film as a semiconductor layer. Electrolytic oxidation polymerization is performed at a temperature range of -25°C to -45°C to obtain a polymer film with good properties. Regarding the temperature range, temperatures below the lower limit slow the reaction rate, and temperatures above the upper limit inhibit polymer film formation. Although ammonium borodisalicylate was used as the supporting salt in the electrolytic solution in the examples, any commonly used supporting salt may be used.

【図面の簡単な説明】[Brief explanation of drawings]

図面は実施例に関し、第1図は本発明による固
体電解コンデンサの半導体層形成工程の状況を示
す図、第2図はアルミニウム固体電解コンデンサ
の一例の断面図、第3図はこのコンデンサのf−
Z特性を示す図である。 1……陽極酸化アルミニウムエツチド箔、2…
…電解液、3……ステンレス板、4……電池、5
……陰極リード、6……アルミニウムエツチド
箔、7……銀蒸着膜、8……ポリピロール膜、9
……アルミニウム酸化膜、10……銀ペースト。
The drawings relate to examples, and FIG. 1 is a diagram showing the state of the semiconductor layer forming process of a solid electrolytic capacitor according to the present invention, FIG. 2 is a cross-sectional view of an example of an aluminum solid electrolytic capacitor, and FIG. 3 is a diagram showing the f-
FIG. 3 is a diagram showing Z characteristics. 1...Anodized aluminum etched foil, 2...
...Electrolyte, 3...Stainless steel plate, 4...Battery, 5
... Cathode lead, 6 ... Aluminum etched foil, 7 ... Silver vapor deposition film, 8 ... Polypyrrole film, 9
...Aluminum oxide film, 10...Silver paste.

Claims (1)

【特許請求の範囲】 1 固体電解コンデンサの製造に際し、陽極体表
面の陽極酸化膜上に、半導体層を形成する工程に
おいて、下記で表わされる複素環式化合物 (X:H,−CH3または−CH2CH3 Y:H,−CH3または−CH2CH3) および支持塩を含む電解液中で、−25℃ないし
−45℃の温度範囲内で電解酸化重合を行ない、固
体電解質のポリマー膜を形成することを特徴とす
る固体電解コンデンサの半導体層形成方法。
[Scope of Claims] 1. In manufacturing a solid electrolytic capacitor, in the step of forming a semiconductor layer on the anodic oxide film on the surface of the anode body, a heterocyclic compound represented by the following (X: H, -CH 3 or -CH 2 CH 3 Y: H, -CH 3 or -CH 2 CH 3 ) and a supporting salt within the temperature range of -25°C to -45°C. A method for forming a semiconductor layer of a solid electrolytic capacitor, which comprises performing electrolytic oxidation polymerization to form a polymer film of a solid electrolyte.
JP61030790A 1986-02-17 1986-02-17 Formation of semiconductor layer of solid electrolytic capacitor Granted JPS62189714A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61030790A JPS62189714A (en) 1986-02-17 1986-02-17 Formation of semiconductor layer of solid electrolytic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61030790A JPS62189714A (en) 1986-02-17 1986-02-17 Formation of semiconductor layer of solid electrolytic capacitor

Publications (2)

Publication Number Publication Date
JPS62189714A JPS62189714A (en) 1987-08-19
JPH0563009B2 true JPH0563009B2 (en) 1993-09-09

Family

ID=12313469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61030790A Granted JPS62189714A (en) 1986-02-17 1986-02-17 Formation of semiconductor layer of solid electrolytic capacitor

Country Status (1)

Country Link
JP (1) JPS62189714A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60244017A (en) * 1984-05-18 1985-12-03 日通工株式会社 Method of producing solid electrolytic condenser
US4934033A (en) * 1987-01-23 1990-06-19 Nitsuko Corporation Method of manufacturing a solid electrolytic capacitor
JPH01205414A (en) * 1987-10-30 1989-08-17 Asahi Glass Co Ltd Solid electrolytic capacitor
JPH0267708A (en) * 1988-09-02 1990-03-07 Nitsuko Corp Manufacture of organic semiconductor solid electrolytic capacitor
FR2714077B1 (en) * 1993-12-21 1996-03-08 Lorraine Laminage Process and bath for the electroplating of polypyrrole on a surface of metal which can be oxidized by electropolymerization.
JP7679622B2 (en) * 2020-12-01 2025-05-20 日本ケミコン株式会社 Electrolytic capacitor and method for manufacturing the same

Also Published As

Publication number Publication date
JPS62189714A (en) 1987-08-19

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