JPH0563011B2 - - Google Patents
Info
- Publication number
- JPH0563011B2 JPH0563011B2 JP6657387A JP6657387A JPH0563011B2 JP H0563011 B2 JPH0563011 B2 JP H0563011B2 JP 6657387 A JP6657387 A JP 6657387A JP 6657387 A JP6657387 A JP 6657387A JP H0563011 B2 JPH0563011 B2 JP H0563011B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- titanium
- titanium nitride
- nitride film
- aluminum wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路の製造方法に関し、特
にアルミ配線の形成法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor integrated circuit, and particularly to a method for forming aluminum wiring.
従来、アルミニウム配線は通常、シリコン基板
との化学反応を抑える所謂バイア・メタルを介し
て形成される。このバリア・メタルは一般に連続
スパツタリング法により形成されるもので、例え
ばチタン（Ti）ターゲツトを最初にアルゴン・
ガスを、ついでアルゴンと窒素の混合ガスをそれ
ぞれソース・ガスに用いてスパツタリングしチタ
ン膜および窒化チタン膜を連続的に成長させてい
る。
Conventionally, aluminum interconnections are typically formed through so-called via metals that suppress chemical reactions with silicon substrates. This barrier metal is generally formed by continuous sputtering, for example by first sputtering a titanium (Ti) target with argon.
A titanium film and a titanium nitride film are continuously grown by sputtering using a gas and then a mixed gas of argon and nitrogen as a source gas.
〔発明が解決しようとする問題点〕
しかしながら、この従来法によつて形成される
窒化チタン膜／チタン膜は膜質がバリア・メタル
としては充分でないので窒化チタン膜の膜厚を充
分厚くすると共に膜中の欠陥に酸素をつめこむ所
謂「スタツフ効果」を利用する方法がとられてい
る。したがつて、加工性に問題がある他、膜質の
均一性および再現性に欠けるという生産技術上重
大の欠点がある。[Problems to be solved by the invention] However, the titanium nitride film/titanium film formed by this conventional method does not have sufficient film quality as a barrier metal. A method is being used that utilizes the so-called ``Staff effect,'' which traps oxygen into the defects inside. Therefore, in addition to problems in processability, there are serious drawbacks in production technology such as lack of uniformity and reproducibility of film quality.
本発明の目的は、上記の状況に鑑み、欠陥密度
のきわめて少ない膜質の窒化チタン膜をバリア・
メタルとするアルミ配線成形工程を備えた半導体
集積回路の製造方法を提供することである。 In view of the above circumstances, an object of the present invention is to use a titanium nitride film with extremely low defect density as a barrier film.
An object of the present invention is to provide a method for manufacturing a semiconductor integrated circuit, which includes a process for forming metal aluminum wiring.
本発明によれば半導体集積回路の製造方法は、
アルミ配線との結線のためのコンタクト孔を層間
絶縁膜に開口する工程と、前記コンタクト孔の内
部にチタン膜および窒化チタン膜をそれぞれスパ
ツタリング法または気相成長法により連続的に成
長させる工程と、アンモニア・ガスまたは窒素ガ
スをソース・ガスとする窒素プラズマによる前記
窒化チタン膜／チタン膜２層構造膜のプラズマ窒
化工程とを備えるアルミニウム膜／窒化チタン
膜／チタン膜の３層構造からなるアルミ配線の形
成工程を含んで構成される。
According to the present invention, a method for manufacturing a semiconductor integrated circuit includes:
a step of opening a contact hole in an interlayer insulating film for connection with an aluminum wiring; a step of continuously growing a titanium film and a titanium nitride film inside the contact hole by sputtering or vapor phase epitaxy, respectively; and a plasma nitriding process of the titanium nitride film/titanium film two-layer structure film using nitrogen plasma using ammonia gas or nitrogen gas as a source gas. The structure includes a forming process.
すなわち、本発明によれば従来方法により形成
された窒化チタン膜／チタン膜の２層膜には窒素
プラズマ処理が追加される。この処理により窒化
チタン膜の欠陥部分は再現性よく埋められ欠陥数
が著しく減少して膜質を飛躍的に向上せしめ得る
ので、バリア・メタルを信頼性を損うことなく大
幅に薄膜化することができることとなりアルミ配
線の形成工程の歩留りを向上せしめ得るばかりで
なくその信頼性を著しく高めることが可能とな
る。 That is, according to the present invention, nitrogen plasma treatment is added to the two-layer film of titanium nitride film/titanium film formed by the conventional method. This treatment fills the defective parts of the titanium nitride film with good reproducibility, significantly reduces the number of defects, and dramatically improves the film quality, making it possible to significantly reduce the thickness of the barrier metal without sacrificing reliability. This makes it possible not only to improve the yield of the aluminum wiring forming process but also to significantly improve its reliability.
次に、本発明について図面を参照して説明す
る。
Next, the present invention will be explained with reference to the drawings.
第１図ａおよびｂは本発明の一実施例を示すア
ルミ配線の形成工程図である。本実施例によれ
ば、第１図ａの如く通常の半導体集積回路装置の
製造法に従つて、ｐ形シリコン基板１の不活性領
域にはフイールド酸化膜２がまず形成されついで
活性領域にはｎ形拡散層３がヒ素（As）のイオ
ン注入により形成される。つぎに層間絶縁膜４が
形成された後ｎ形拡散層３を含む上面にはコンタ
クト孔が開口され、最初にアルゴン（Ar）をつ
づいてアルゴン（Ar）と窒素（N2）の混合ガス
をそれぞれ用いて、500Åのチタン膜（Ti）およ
び500Åの窒化チタン膜（TiN）６がスパツタ法
を用いて連続的に成長される。この状態でアンモ
ニア・ガス（NH3）をソースする350℃の高周波
（RF）プラズマ処理が１時間施された後、アルミ
ニウム（Al）配線７を通常の手段により約1μｍ
の膜厚で形成すれば第１図ｂの如きチタン膜／窒
化チタン膜からなる２層構造のバリア・メタルを
備えたアルミ配線が形成される。本実施例によれ
ば窒素プラズマ処理を施すことにより窒化チタン
膜がもつ欠陥を充分に埋めることができるので薄
い500Å程度の膜厚でも充分にバリア性のある窒
化チタン膜を実現することができる。 FIGS. 1a and 1b are process diagrams for forming aluminum wiring, showing an embodiment of the present invention. According to this embodiment, a field oxide film 2 is first formed in an inactive region of a p-type silicon substrate 1, and then a field oxide film 2 is formed in an active region, as shown in FIG. An n-type diffusion layer 3 is formed by ion implantation of arsenic (As). Next, after the interlayer insulating film 4 is formed, a contact hole is opened in the upper surface including the n-type diffusion layer 3, and a mixed gas of argon (Ar), followed by a mixture of argon (Ar) and nitrogen (N 2 ) is injected. Using each, a 500 Å titanium film (Ti) and a 500 Å titanium nitride film (TiN) 6 are successively grown using a sputtering method. In this state, radio frequency (RF) plasma treatment at 350°C using ammonia gas (NH 3 ) as a source was performed for one hour, and then the aluminum (Al) wiring 7 was formed to a thickness of about 1 μm by normal means.
If the film is formed to a film thickness of 2, an aluminum wiring having a barrier metal having a two-layer structure of titanium film/titanium nitride film as shown in FIG. 1B will be formed. According to this embodiment, defects in the titanium nitride film can be sufficiently filled by nitrogen plasma treatment, so that a titanium nitride film with sufficient barrier properties can be realized even with a thin film thickness of about 500 Å.
第２図は本発明の他の実施例を示すアルミ配線
形成の最終工程図である。本実施例によれば窒素
プラズマ処理は窒素ガス（N2）をソースとする
高周波（RF）プラズマ法により比較的高温の温
度600℃で行なわれる。この場合、温度が600℃と
比較的高温であるためチタン膜５とｎ形拡散層２
は互いに反応してチタン・シリサイド膜８を形成
するが、この場合でも充分に信頼性の高い配線を
得ることができる。 FIG. 2 is a diagram showing the final process of forming aluminum wiring, showing another embodiment of the present invention. According to this embodiment, the nitrogen plasma treatment is performed at a relatively high temperature of 600° C. using a radio frequency (RF) plasma method using nitrogen gas (N 2 ) as a source. In this case, since the temperature is relatively high at 600°C, the titanium film 5 and the n-type diffusion layer 2
react with each other to form a titanium silicide film 8, but even in this case, sufficiently reliable wiring can be obtained.
以上説明したように本発明によれば、アルゴン
と窒素との混合ガスによる従来のスパツタ成長の
窒化チタン膜に窒素プラズマ処理を施すことによ
り、均一性、再現性および欠陥密度等の少ない膜
質の飛躍的に向上した窒化チタン膜を得ることが
できるのできわめて信頼性の高いアルミ配線を備
えた半導体集積回路を容易に製造することができ
る。
As explained above, according to the present invention, by applying nitrogen plasma treatment to a conventional sputter-grown titanium nitride film using a mixed gas of argon and nitrogen, film quality such as uniformity, reproducibility, and defect density can be improved dramatically. Since a titanium nitride film with improved performance can be obtained, semiconductor integrated circuits with extremely reliable aluminum wiring can be easily manufactured.
第１図ａおよびｂは本発明の一実施例を示すア
ルミ配線の形成工程図、第２図は本発明の他の実
施例を示すアルミ配線形成の最終工程図である。
１……ｐ形シリコン基板、２……フイールド酸
化膜、３……ｎ形拡散層、４……層間絶縁膜、５
……チタン膜、６……窒化チタン、７……アルミ
ニウム配線、８……チタン・シリサイド膜。
FIGS. 1A and 1B are process diagrams for forming aluminum wiring according to one embodiment of the present invention, and FIG. 2 is a diagram showing the final process for forming aluminum wiring according to another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...P-type silicon substrate, 2...Field oxide film, 3...N-type diffusion layer, 4...Interlayer insulating film, 5
...Titanium film, 6...Titanium nitride, 7...Aluminum wiring, 8...Titanium silicide film.
Claims (1)
３層構造からなるアルミ配線を備える半導体集積
回路の製造方法において、前記アルミ配線との結
線のためのコンタクト孔を層間絶縁膜に開口する
工程と、前記コンタクト孔の内部にチタン膜およ
び窒化チタン膜をそれぞれスパツタリング法また
は気相成長法により連続的に成長させる工程と、
アンモニア・ガスまたは窒素ガスをソース・ガス
とする窒素プラズマによる前記窒化チタン膜／チ
タン膜２層構造膜のプラズマ窒化工程とを含むこ
とを特徴とする半導体集積回路の製造方法。1. A method for manufacturing a semiconductor integrated circuit having an aluminum wiring having a three-layer structure of aluminum film/titanium nitride film/titanium film, including the step of opening a contact hole in an interlayer insulating film for connection with the aluminum wiring; a step of continuously growing a titanium film and a titanium nitride film inside the contact hole by a sputtering method or a vapor phase growth method, respectively;
A method for manufacturing a semiconductor integrated circuit, comprising a step of plasma nitriding the titanium nitride film/titanium film two-layer structure film using nitrogen plasma using ammonia gas or nitrogen gas as a source gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6657387A JPS63229814A (en) | 1987-03-19 | 1987-03-19 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6657387A JPS63229814A (en) | 1987-03-19 | 1987-03-19 | Manufacture of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63229814A JPS63229814A (en) | 1988-09-26 |
| JPH0563011B2 true JPH0563011B2 (en) | 1993-09-09 |
Family
ID=13319834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6657387A Granted JPS63229814A (en) | 1987-03-19 | 1987-03-19 | Manufacture of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63229814A (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0594965A (en) * | 1991-10-01 | 1993-04-16 | Sharp Corp | Method for manufacturing semiconductor device |
| JPH0594969A (en) * | 1991-10-01 | 1993-04-16 | Sharp Corp | Method for manufacturing semiconductor device |
| US6365495B2 (en) | 1994-11-14 | 2002-04-02 | Applied Materials, Inc. | Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature |
| US6699530B2 (en) | 1995-07-06 | 2004-03-02 | Applied Materials, Inc. | Method for constructing a film on a semiconductor wafer |
| US6251758B1 (en) | 1994-11-14 | 2001-06-26 | Applied Materials, Inc. | Construction of a film on a semiconductor wafer |
| US5712193A (en) * | 1994-12-30 | 1998-01-27 | Lucent Technologies, Inc. | Method of treating metal nitride films to reduce silicon migration therein |
| US5567483A (en) * | 1995-06-05 | 1996-10-22 | Sony Corporation | Process for plasma enhanced anneal of titanium nitride |
| EP0776991B1 (en) * | 1995-12-05 | 2002-02-06 | Applied Materials, Inc. | Plasma annealing of thin films |
| US5989652A (en) * | 1997-01-31 | 1999-11-23 | Tokyo Electron Limited | Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications |
| US5989623A (en) * | 1997-08-19 | 1999-11-23 | Applied Materials, Inc. | Dual damascene metallization |
| US6221174B1 (en) | 1999-02-11 | 2001-04-24 | Applied Materials, Inc. | Method of performing titanium/titanium nitride integration |
| US6555183B2 (en) | 1999-06-11 | 2003-04-29 | Applied Materials, Inc. | Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
| US6436819B1 (en) | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
| JP6507860B2 (en) * | 2015-06-01 | 2019-05-08 | 富士電機株式会社 | Semiconductor device manufacturing method |
-
1987
- 1987-03-19 JP JP6657387A patent/JPS63229814A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63229814A (en) | 1988-09-26 |
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