Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH056355B2 - - Google Patents
[go: Go Back, main page]

JPH056355B2 - - Google Patents

Info

Publication number
JPH056355B2
JPH056355B2 JP59225274A JP22527484A JPH056355B2 JP H056355 B2 JPH056355 B2 JP H056355B2 JP 59225274 A JP59225274 A JP 59225274A JP 22527484 A JP22527484 A JP 22527484A JP H056355 B2 JPH056355 B2 JP H056355B2
Authority
JP
Japan
Prior art keywords
light
pigments
dyes
film
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59225274A
Other languages
Japanese (ja)
Other versions
JPS61102075A (en
Inventor
Kazucho Takaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Paper Mills Ltd
Original Assignee
Mitsubishi Paper Mills Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Paper Mills Ltd filed Critical Mitsubishi Paper Mills Ltd
Priority to JP59225274A priority Critical patent/JPS61102075A/en
Publication of JPS61102075A publication Critical patent/JPS61102075A/en
Publication of JPH056355B2 publication Critical patent/JPH056355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/311Phthalocyanine
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Light Receiving Elements (AREA)

Description

【発明の詳細な説明】 (A) 産業上の利用分野 本発明は光電変換素子に関し、特に入射光の波
長を識別できるような光電変換素子に関する。
DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a photoelectric conversion element, and particularly to a photoelectric conversion element that can discriminate the wavelength of incident light.

(B) 従来技術及びその問題点 空間電荷層などを利用した光電変換素子、例え
ばPN接合や金属一半導体接合を利用した光電変
換素子では一定の印加電圧で入射光に対応して、
光電流あるいは光起電力が得られる。またこのと
き印加電圧がゼロであれば電池である。このよう
にPN接合や金属半導体接合などを利用して得ら
れた光電流あるいは光起電力は回路により正かゼ
ロあるいは負かゼロであり、入射光量と光電変換
素子の量子収率によつてその絶対値が変化する。
しかし、このとき光電流あるいは光起電力はどの
ような入射光波長に対しても光照射に暗時の値か
ら立ち上がり、光照射を切れば再び暗時の値に戻
るという一過程のみが言われる。チオニン−
Fe2+系の光電池では、アノード光電流とカソー
ド光電流の組み合せから複雑な光電流が観察され
ているが、入射光波長による光電流波形の変化は
報告されていない。
(B) Prior art and its problems Photoelectric conversion elements that use space charge layers, such as PN junctions or metal-semiconductor junctions, respond to incident light with a constant applied voltage.
A photocurrent or photovoltaic force can be obtained. Also, if the applied voltage is zero at this time, it is a battery. In this way, the photocurrent or photovoltaic force obtained using a PN junction or metal-semiconductor junction is positive, zero, or negative zero depending on the circuit, and it depends on the amount of incident light and the quantum yield of the photoelectric conversion element. Absolute value changes.
However, in this case, there is only one process in which the photocurrent or photovoltaic force rises from the dark value upon light irradiation, regardless of the incident light wavelength, and returns to the dark value once the light irradiation is turned off. . Thionin
In Fe 2+ -based photovoltaic cells, a complex photocurrent has been observed from the combination of anode photocurrent and cathode photocurrent, but changes in the photocurrent waveform depending on the wavelength of incident light have not been reported.

前記のような光電変換素子では、単独では入射
光の識別はできない。識別を行なうためには入射
光路にフイルターを挿入しなければならず、例え
ばこの種類の入射光があつた場合、光路を2つに
分離しなければならなかつた。
The photoelectric conversion element described above cannot distinguish incident light by itself. In order to perform identification, a filter must be inserted into the incident optical path, and for example, when this type of incident light is received, the optical path must be separated into two.

(C) 発明の目的 入射光路にフイルターを挿入しなくても、入射
光波長の識別が可能な光電変換素子を提供するこ
とにある。
(C) Object of the Invention It is an object of the invention to provide a photoelectric conversion element that can identify the wavelength of incident light without inserting a filter into the incident optical path.

(A) 発明の構成 本発明の目的は、可視光または赤外光に対して
光起電力を有し、かつ入射光の波長により光照射
時に正あるいは負の光電流シグナルが得られるフ
タロシアニン系顔料、チオ−インジゴ系顔料、イ
ンジゴ系顔料、ペリレン系顔料、アゾ顔料、シア
ニン顔料、多環キノン系顔料、ピリリウム系染
料、チオピリリウム系染料、トリアリールメタン
系染料、チオジン染料およびシアニン染料から選
ばれる少なくとも一つの光導電性有機化合物とバ
インダーを含む厚さ0.1〜10μmの膜、および該膜
の両面に接触している2つの電極を有し、該電極
の少なくとも一方は透明である光電変換素子を用
い、該素子の透明な一方の電極から該素子に光を
照射し、正あるいは負の光電流シグナルを得るこ
とによつて、前記照射光の波長を識別する方法に
より達成される。
(A) Structure of the Invention The object of the present invention is to provide a phthalocyanine pigment that has a photovoltaic force in response to visible light or infrared light, and that provides a positive or negative photocurrent signal upon irradiation depending on the wavelength of incident light. , thio-indigo pigments, indigo pigments, perylene pigments, azo pigments, cyanine pigments, polycyclic quinone pigments, pyrylium dyes, thiopyrylium dyes, triarylmethane dyes, thiodine dyes, and cyanine dyes. Using a photoelectric conversion element having a film with a thickness of 0.1 to 10 μm containing one photoconductive organic compound and a binder, and two electrodes in contact with both sides of the film, at least one of which is transparent. This is accomplished by a method of identifying the wavelength of the irradiated light by irradiating the element with light from one transparent electrode of the element and obtaining a positive or negative photocurrent signal.

膜の作成方法としては、バインダー中に溶解あ
るいは分散させて塗布する方法又は加圧によりペ
レツト化する方法などが適宜選択される。バイン
ダーとしては、ポリカーボネイト、ポリスチレ
ン、ポリエステル、ポリアリレート、ポリビニル
アルコール、メラニン樹脂、フエノール樹脂など
バインダーとして膜を形成するものであればよ
い。
As a method for forming the film, a method of dissolving or dispersing it in a binder and coating it, a method of forming it into pellets by applying pressure, etc. are selected as appropriate. The binder may be one that forms a film as a binder, such as polycarbonate, polystyrene, polyester, polyarylate, polyvinyl alcohol, melanin resin, or phenolic resin.

膜の両面に接触させた電極は少なくとも一方は
光照射の必要性から導電性透明電極でなければな
らない。透明電極としては、Nesa膜やITOある
いはPt・Au・Ag・Cu・Al・Inなどの金属膜が
用いられる。
At least one of the electrodes in contact with both surfaces of the film must be a conductive transparent electrode because of the need for light irradiation. As the transparent electrode, a Nesa film, ITO, or a metal film such as Pt, Au, Ag, Cu, Al, In, etc. is used.

基板は絶縁性のものであれば透明、不透明を問
うものでなく、またガラスのように固いものから
ポリエチレンテレフタレートのようなフレキシビ
リテイに富むものまでどのようなものでもかまわ
ない。
The substrate does not need to be transparent or opaque as long as it is an insulating material, and may be of any material ranging from a hard material such as glass to a highly flexible material such as polyethylene terephthalate.

本発明の効果は次のような原理によるものと考
察される。光応答性を持つこのような膜に光を照
射すると膜中で電子と正孔が発生するが、光が膜
中で不均一に吸収された場合、電子および正孔に
濃度勾配が生じまたこのとき正孔と電子で拡散速
度に差がある場合には空間電荷層などに起因した
光起電力とは別に光起電力が生ずる。ただし電極
のフエルミレベルに従つて、膜と非オーミツク接
触をとる場合があるが、このときの挙動はより複
雑になる。
The effects of the present invention are considered to be based on the following principle. When such a photoresponsive film is irradiated with light, electrons and holes are generated in the film, but if the light is absorbed unevenly in the film, a concentration gradient of electrons and holes is created and this When there is a difference in diffusion rate between holes and electrons, a photoelectromotive force is generated separately from the photoelectromotive force caused by the space charge layer. However, depending on the fermi level of the electrode, it may make non-ohmic contact with the membrane, but in this case the behavior becomes more complex.

先述したような効果により、光起電力、光電流
シグナルを得る場合は、膜中で電子および正孔の
発生の分布および電界の容子に従がつて、その波
形は微妙に変化する。この結果、電子・正孔対の
発生する領域は光導電性有機物質の吸光係数に従
がい同一の光電変換素子で入射光波長に対し、正
あるいは負のシグナルを得ることができるので波
長の識別が可能となる。
Due to the above-mentioned effects, when a photovoltaic force or photocurrent signal is obtained, the waveform changes slightly depending on the distribution of electron and hole generation in the film and the capacity of the electric field. As a result, the region where electron-hole pairs are generated follows the extinction coefficient of the photoconductive organic material, and the same photoelectric conversion element can obtain a positive or negative signal for the wavelength of incident light, so wavelength can be identified. becomes possible.

膜厚は、膜の内部抵抗が大きくなることを避け
るために10μm以下が望ましく光吸収の問題から
0.1μm以上が望ましい。
The film thickness is preferably 10 μm or less in order to avoid increasing the internal resistance of the film, and to avoid problems with light absorption.
A thickness of 0.1 μm or more is desirable.

(B) 実施例 以下に図面に基き本発明を詳細に説明する。(B) Example The present invention will be explained in detail below based on the drawings.

実施例 1 第1図に、本発明の1実施例として素子の断面
図を示した。基板1と第1電極2、膜3、第2電
極4の3層から成つている。またこの3層を物理
的あるいは化学的に保護するために、保護層6を
設けてもかまわない。
Example 1 FIG. 1 shows a cross-sectional view of an element as an example of the present invention. It consists of three layers: a substrate 1, a first electrode 2, a film 3, and a second electrode 4. Further, a protective layer 6 may be provided to physically or chemically protect these three layers.

第1電極2にインジウム、第2電極4に金の蒸
着膜を用い金を透明電極としてこの方向から光照
射した。
A vapor-deposited film of indium was used for the first electrode 2 and gold was used for the second electrode 4, and light was irradiated from this direction using gold as a transparent electrode.

異種金属でコンタクトを取つたため、金電極側
はカソードとなり一種の電池として挙動させるこ
とができる。膜は極性の大きな溶媒、例えばジオ
キサンにブチルアクリレートとメタアクリル酸と
の共重合体をバインダーとして溶解させて、銅フ
タロシアニン(東洋インキ製)を機械的に分散
し、インジウム電極上に塗布した。塗布膜は乾燥
器中で90℃前後で十分乾燥させた。銅フタロシア
ニンのバインダーに対する比は16重量%、塗布膜
の膜厚は約3μmであつた。
Since contact is made with different metals, the gold electrode side becomes a cathode, allowing it to behave as a type of battery. The membrane was prepared by dissolving a copolymer of butyl acrylate and methacrylic acid as a binder in a highly polar solvent such as dioxane, mechanically dispersing copper phthalocyanine (manufactured by Toyo Ink), and coating the mixture on an indium electrode. The coated film was sufficiently dried at around 90°C in a dryer. The ratio of copper phthalocyanine to binder was 16% by weight, and the thickness of the coating film was about 3 μm.

第2図に測定回路を図示した。2−1図は、簡
易的測定系で電流計7はケイスレイ社製ピユアニ
メータ610C型を用い、レコーダ8で光電流波形
を追跡した。
Figure 2 shows the measurement circuit. Figure 2-1 shows a simple measurement system, in which the ammeter 7 was a Keithley Pyu Animator Model 610C, and the recorder 8 tracked the photocurrent waveform.

2−2図は、より応答速度の速い系であり、9
は抵抗、プリアンプ10はエヌエフ回路設計ブロ
ツク製LI−75Aを用い、オートニクス製トランジ
エントメモリS−121(11)で波形を記憶させレ
コーダ12で記録した。13はAl製のサンプル
ボツクスで14はサンプルである。
Figure 2-2 shows a system with faster response speed, 9
is a resistor, the preamplifier 10 is LI-75A manufactured by NF Circuit Design Block, and the waveforms are stored in a transient memory S-121 (11) manufactured by Autonics and recorded by a recorder 12. 13 is a sample box made of Al, and 14 is a sample.

光源はタングステンハロゲンランプを用い、回
析格子で単色光を取り出し、高周波カツトオブフ
イルターを通して入射光hνとした。モノクロメ
ーターの光取り出し口にはカメラ用のシヤツタを
取り付けこのシヤツタを用いて光照射を行なつ
た。入射hνは520〜550nmで1.8×103〜2.0×
103erg/cm3secであつた。
A tungsten halogen lamp was used as the light source, and monochromatic light was extracted with a diffraction grating and passed through a high-frequency cut-of-filter as incident light hν. A camera shutter was attached to the light outlet of the monochromator, and this shutter was used to irradiate light. The incident hν is 1.8×10 3 to 2.0× at 520 to 550 nm.
It was 10 3 erg/cm 3 sec.

測定はすべて室温で行なつた。 All measurements were performed at room temperature.

第3図に、入射光波長を変化させた場合の光電
流波形を示した。第3図のa,b,c及びdはそ
れぞれ530、540、550及び580nmでの光電流波形
を2−1図の測定系で測定した場合である。入射
光波長によつて、光電流はダイナミツクに変化
し、550〜730nmの波長領域では光を入射した時
に第3図におけるc,dのように暗電流とは逆符
号(負)のシグナルが観察された。このシグナル
は第3図におけるa,bのように他の入射光波長
域では観察されないのでこの2種の波長域を識別
できる。
FIG. 3 shows photocurrent waveforms when the wavelength of incident light is changed. A, b, c, and d in FIG. 3 are the photocurrent waveforms at 530, 540, 550, and 580 nm, respectively, measured using the measurement system shown in FIG. 2-1. The photocurrent changes dynamically depending on the wavelength of the incident light, and in the wavelength range of 550 to 730 nm, when light is incident, signals with the opposite sign (negative) to the dark current are observed as shown in c and d in Figure 3. It was done. Since this signal is not observed in other incident light wavelength ranges such as a and b in FIG. 3, these two wavelength ranges can be distinguished.

前者の波長域は銅フタロシアニンの吸光係数の
大きな領域と一致している。2−2図の測定系で
この逆符号(負)シグナルの時間は10〜100msec
程度であり、大きさは630nmで光電流の定常値
の10倍以上となる。
The former wavelength range corresponds to the region where the extinction coefficient of copper phthalocyanine is large. In the measurement system shown in Figure 2-2, the time of this opposite sign (negative) signal is 10 to 100 msec.
The magnitude is about 630 nm, which is more than 10 times the steady value of the photocurrent.

このシグナルは定常値とともに空気中でゆつく
りと減衰するが10-5torr程度の真空下に2時間ほ
どの放置で元の値に回復する。また印加電圧によ
り暗電流値は自由に設定することが可能である。
このような光照射時の特性を生かすことによつて
2種の入射光波長の識別が可能となる。
This signal slowly decays in air as it reaches its steady state, but it recovers to its original value after being left in a vacuum of about 10 -5 torr for about 2 hours. Furthermore, the dark current value can be freely set depending on the applied voltage.
By taking advantage of such characteristics during light irradiation, it becomes possible to distinguish two types of incident light wavelengths.

実施例 2 ポリスチレンであるスタイロン685(旭ダウ製)
をバインダーとして、他は実施例1と同様な構成
を持つサンプルについてその光電流波形を2−1
図の測定系を用いて追跡した。このサンプルの膜
厚は3.5nmであつた。結果は実施例1と同様に、
550〜730nmの波長領域で逆符号(負)シグナル
が観察された。
Example 2 Styron 685 which is polystyrene (manufactured by Asahi Dow)
2-1 shows the photocurrent waveform of a sample having the same configuration as in Example 1 except for using the binder as the binder.
Tracking was performed using the measurement system shown in the figure. The film thickness of this sample was 3.5 nm. The results are the same as in Example 1.
An opposite sign (negative) signal was observed in the wavelength region of 550-730 nm.

(F) 発明の効果 このようにして本発明によると、フイルタを用
いることなく1つの受光素子で2以上の異なつた
波長領域の入射光を識別できるので、例えば画像
読取りセンサーに用いた場合、センサーの構造を
簡素化できるという利点を有する。また識別でき
る波長領域は膜を形成する電子正孔発生体の吸収
スペクトルに対応するので材料により任意に設定
することが可能である。
(F) Effect of the Invention In this way, according to the present invention, one light-receiving element can distinguish incident light in two or more different wavelength regions without using a filter, so when used in an image reading sensor, for example, the sensor It has the advantage of simplifying the structure. Further, since the wavelength range that can be identified corresponds to the absorption spectrum of the electron-hole generator forming the film, it can be arbitrarily set depending on the material.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の光電変換素子の1例を示す断
面図、第2図は測定回路図で2−1は簡易型、2
−2図は高速型を示す。第3図のa,b,c及び
dはそれぞれ530、540、550、及び580nmでの光
電流波形を示したグラフである。 図中、1……基板、2……第1電極、3……
膜、4……第2電極、5……リード線、6……保
護膜、7……電流計、8……レコーダ、9……抵
抗、10……プリアンプ、11……トランゼント
メモリー、12……レコーダ、13……サンプル
ボツクス、14……サンプルをそれぞれ示す。
Fig. 1 is a cross-sectional view showing one example of the photoelectric conversion element of the present invention, and Fig. 2 is a measurement circuit diagram.
Figure-2 shows the high-speed type. FIG. 3 a, b, c and d are graphs showing photocurrent waveforms at 530, 540, 550 and 580 nm, respectively. In the figure, 1... substrate, 2... first electrode, 3...
Membrane, 4... Second electrode, 5... Lead wire, 6... Protective film, 7... Ammeter, 8... Recorder, 9... Resistor, 10... Preamplifier, 11... Transient memory, 12 . . . recorder, 13 . . . sample box, 14 . . . sample.

Claims (1)

【特許請求の範囲】[Claims] 1 可視光または赤外光に対して光起電力を有
し、かつ入射光の波長により光照射時に正あるい
は負の光電流シグナルが得られるフタロシアニン
系顔料、チオ−インジゴ系顔料、インジゴ系顔
料、ペリレン系顔料、アゾ顔料、シアニン顔料、
多環キノン系顔料、ピリリウム系染料、チオピリ
リウム系染料、トリアリールメタン系染料、チオ
ジン染料およびシアニン染料から選ばれる少なく
とも一つの光導電性有機化合物とバインダーを含
む厚さ0.1〜10μmの膜、および該膜の両面に接触
している2つの電極を有し、該電極の少なくとも
一方は透明である光電変換素子を用い、該素子の
透明な一方の電極から該素子に光を照射し、正あ
るいは負の光電流シグナルを得ることによつて、
前記照射光の波長を識別する方法。
1. Phthalocyanine pigments, thio-indigo pigments, and indigo pigments that have photovoltaic force against visible light or infrared light, and can provide a positive or negative photocurrent signal when irradiated with light depending on the wavelength of incident light. Perylene pigments, azo pigments, cyanine pigments,
A film having a thickness of 0.1 to 10 μm containing a binder and at least one photoconductive organic compound selected from polycyclic quinone pigments, pyrylium dyes, thiopyrylium dyes, triarylmethane dyes, thiodine dyes, and cyanine dyes, and A photoelectric conversion element having two electrodes in contact with both sides of the film, at least one of which is transparent, is used, and light is irradiated from one transparent electrode of the element to the element to generate positive or negative signals. By obtaining the photocurrent signal of
A method of identifying the wavelength of the illumination light.
JP59225274A 1984-10-25 1984-10-25 Method of identifying wavelength using photoelectric conversion elements Granted JPS61102075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59225274A JPS61102075A (en) 1984-10-25 1984-10-25 Method of identifying wavelength using photoelectric conversion elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59225274A JPS61102075A (en) 1984-10-25 1984-10-25 Method of identifying wavelength using photoelectric conversion elements

Publications (2)

Publication Number Publication Date
JPS61102075A JPS61102075A (en) 1986-05-20
JPH056355B2 true JPH056355B2 (en) 1993-01-26

Family

ID=16826753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59225274A Granted JPS61102075A (en) 1984-10-25 1984-10-25 Method of identifying wavelength using photoelectric conversion elements

Country Status (1)

Country Link
JP (1) JPS61102075A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715601B2 (en) * 1989-11-30 1998-02-18 日立化成工業株式会社 How to convert light intensity changes into electrical signals
ITMI20020231A1 (en) * 2002-02-08 2003-08-08 Milano Politecnico ORGANIC SEMICONDUCTOR PHOTORETER
ITMI20061866A1 (en) * 2006-09-29 2008-03-30 Fondazione Istituto Italiano Di Tecnologia DEVICE FOR DETECTION OF COLOR WITH ORGANIC PHOTODIODES AND SEMICONDUCTURES

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1593898A (en) * 1977-04-20 1981-07-22 Exxon Research Engineering Co Photovoltaic device
JPS5928388A (en) * 1982-08-09 1984-02-15 Daicel Chem Ind Ltd Photoelectric conversion element

Also Published As

Publication number Publication date
JPS61102075A (en) 1986-05-20

Similar Documents

Publication Publication Date Title
US4175982A (en) Photovoltaic cell
CA1096022A (en) Photovoltaic cell
US4164431A (en) Multilayer organic photovoltaic elements
US4778985A (en) Imaging plate structure
Rosei et al. Photoelectronic properties of synthetic melanins
JPH056355B2 (en)
JP3530471B2 (en) Gas detection method and gas sensor utilizing photocurrent amplification
JPS6120372A (en) Photoelectric conversion element
US7081368B2 (en) Method for detecting gas with the use of photocurrent amplification and the like and gas sensor
JPH01215070A (en) Organic solar battery
Meier et al. Industrial application of the semiconductor properties of dyes
CN115101656A (en) X-ray superconducting transition edge detector and preparation method thereof
US5326678A (en) High dielectric polymeric optical recording medium
JPS60165768A (en) Photoelectric converter
CA2076723A1 (en) Coated material and the use thereof
EP0307479A1 (en) Switching device comprising a non-memorizable converting layer
Shimura et al. Solar cells of metal-free phthalocyanine dispersed in polyvinyl carbazole. 1: Effects of the recrystallization of H2PC on cell characteristics
CA1252667A (en) Infrared sensitive photoconductor composition
Kanayama et al. Photovoltaic properties of lead phthalocyanine contacts
JPH02122440A (en) Ferroelectric polymer optical recording media
Villar Photoelectrochemical effects in the electrolyte-pigment-metal system: I. Metal-free phthalocyanine film description of short-circuit photocurrents for thin films of pigment
Channon et al. The spectral dependence of the surface photovoltage in CdS
JPH0543193B2 (en)
JPH01165177A (en) Photoelectric conversion element
JPH04213877A (en) Organic color photodetector