JPH0564466B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in an optical solid-state device having three functions: display, imaging, and hard copy.

[Technical background of the invention and its problems]

BACKGROUND ART Conventionally, various devices have been put into practical use that satisfy the functions of only displaying, taking images, and obtaining hard copies, but a device that has all three functions has not yet been put into practical use. Furthermore, in display devices, panel displays, in which the display circuit is formed on a thin substrate, are most in demand because of the need for compactness and weight reduction, unlike CRTs in which the display surface occupies most of the display surface. Therefore,
If a device capable of realizing the above-mentioned three functions with one panel can be obtained, it is thought that the device can be made smaller, lighter, and lower in cost than conventional devices.

However, if one attempts to individually implement the three functions in a single panel using independent cells, the panel would require a significant increase in density due to manufacturing technology, making it substantially difficult to manufacture. Furthermore, it is more difficult than implementing each function using separate panels, and is not practical.

[Purpose of the invention]

An object of the present invention is to provide a highly practical optical solid-state device that can perform display, imaging, and hard copy by providing three functions in one cell, and can be made smaller, lighter, and lower in cost. It's about doing. Furthermore, another object of the present invention is to provide an optical solid-state device that can increase the contrast ratio and dynamic range of an image signal in an imaging operation.

[Summary of the invention]

The gist of the present invention is to have a basic configuration that has approximately the same structure as one pixel of a switching matrix liquid crystal display device, to use a transparent substrate with a non-reflective film on the back surface, and to By forming the dielectric layer of the capacitor with a photoconductive film, one cell can have three functions: display, imaging, and hard copy.

That is, the present invention is provided on the upper surface side of a transparent substrate, and its gate is connected to an address line, and
A MOS transistor whose source is connected to the data line, a capacitor provided on the upper surface of the substrate and whose one electrode is connected to the drain of the transistor, and a transparent insulating layer on the upper surface of the transistor and capacitor. A display consisting of an opaque conductor layer deposited on the conductor layer and connected to the drain, a display material layer formed on the conductor layer and whose light transmittance can be varied by applying a voltage, and a transparent conductor layer deposited on the material layer. a window portion that allows light from the upper surface of the substrate to enter the lower surface of the substrate, and an antireflection film deposited on the lower surface of the substrate, and a channel portion of the transistor and a dielectric layer of the capacitor. In the optical solid-state device, at least one of which is formed of a photoconductive film, and a plurality of solid-state cells each including the transistor, the capacitor, the display cell, and the window are arranged on the substrate, wherein the window is formed of a photoconductive film. a first imaging means for irradiating light onto an object disposed on the lower surface side of the substrate through the substrate and extracting signal charges accumulated in the capacitor by light reflected from the object at this time to the outside as an image signal; The image signal extracted by is converted into a signal voltage that lowers the transmittance of the display cell when the signal is small, and increases the transmittance when the signal is large, and this signal voltage is used when the image is captured. A driving means for applying voltage to the same display cell, and a second imaging means for performing a second imaging in the same manner as the first imaging while the driving means applies the voltage. be.

Here, the configuration up to ``in...'' above was previously proposed by the present inventors (Japanese Patent Application No. 58-32430
(No.), and the present invention increases the contrast ratio and dynamic range by adding the above-mentioned driving means and imaging means to this configuration.

Further, in the configuration of the above-mentioned prior application, the present invention irradiates light onto an object placed on the lower surface side of the substrate through the window, and uses reflected light from the object at this time to reduce the signal charge accumulated in the capacitor. a first image pickup means for taking out an image signal to the outside; and a first image pickup means for taking out an image signal from the image pickup means; when the signal is small, the transmittance of the display cell is lowered; and when the signal is large, the transmittance is lowered; a driving means for converting the signal voltage into a signal voltage that increases the signal voltage and applying this signal voltage to the same display cell when the image is taken; and a driving means provided corresponding to each transistor and applying the signal voltage to the display cell by the driving means. A second image is taken in the same manner as the first image with the voltage applied by the driving means, and the image signal obtained at this time is combined with the signal voltage stored in the memory cell. A second imaging means for extracting the difference as an image signal is provided.

Furthermore, the present invention has the structure of the above-mentioned prior application,
During an imaging operation in which light is irradiated onto an object disposed on the lower surface side of the substrate through the window portion and signal charges accumulated in the capacitor by light reflected from the object at this time are extracted to the outside as an image signal, the display is performed. The transmittance of the display cell is set such that the voltage applied to the display cell is greater than the value at which the transmittance of the display cell is approximately maximum, and the transmittance of the display cell is set before the potential of the display cell that changes due to imaging reaches the saturated accumulation signal potential. is set to a value that decreases.

〔Effect of the invention〕

According to the present invention, a desired display cell of the solid-state cell is driven by selecting the address line and the data line, thereby displaying an image in the same manner as a normal liquid crystal display device. Furthermore, while the display material layer of the display cell is made transparent, the object is placed on the bottom side of the substrate and light is incident from the top side of the substrate to the bottom side of the substrate through the window. An object can be imaged by receiving a reflected image of light at a channel portion of the transistor, a dielectric layer of the capacitor, or the like, and detecting a resulting change in potential between the electrodes of the capacitor. Furthermore, with the display cell of the desired solid-state cell being driven to display an image,
By placing photosensitive paper on the bottom side of the substrate and uniformly irradiating light onto the top side of the substrate, the photosensitive paper is irradiated with light whose transmittance is modulated by the display material layer of the display cell. A hard copy of the displayed image can be obtained. Moreover, since the contrast and dynamic range of the image signal during imaging can be increased by the driving means, the potential setting means, etc., imaging with high SN can be performed.

In this way, the three functions of display, imaging, and hard copy can be realized, the device configuration can be made smaller, and it is also effective in reducing costs.
In this case, the above three functions can be provided in one solid cell, and the structure of the solid cell can be made relatively simple, so it is sufficiently practical from the viewpoint of manufacturing technology. It is highly sexual.

[Embodiments of the invention]

FIG. 1 is an equivalent circuit diagram showing a pixel configuration of an optical solid-state device according to a first embodiment of the present invention.
Gate 2 of MOS transistor 1 is connected to address line 3
source 4 is connected to data line 5,
Further, the drain 6 is connected to a liquid crystal cell (display cell) 7 made of a crystal material and a capacitor 8 for injecting signal charges injected from the data line 5. A large number of these one pixel portions 9 are arranged in a matrix on the panel 10 as shown in FIG.

Here, the equivalent circuit shown in FIG. 1 is the same as one pixel circuit of a well-known switching matrix liquid crystal display device. The device of this embodiment is different from a switching matrix liquid crystal display device in that the dielectric layer of the capacitor 8 is formed of a high-resistance photoconductive film, and the structure is such that light can be irradiated onto the photoconductive film, and furthermore, the dielectric layer of the capacitor 8 is formed of a high-resistance photoconductive film, and the structure is such that light can be irradiated onto the photoconductive film. The reason is that it has a structure that allows light to be guided to the outside.

In order to display an image with such a structure, it is sufficient to set a state in which light is not incident on the dielectric layer of the capacitor 8 and to drive a desired liquid crystal cell 7 by selecting the address line 3 and the data line 5. This is the same operation as a normal liquid crystal display device. Furthermore, in order to take an image, a predetermined reset voltage is first applied from the data line 5 to the connection terminal P between the liquid crystal cell 7 and the capacitor 8, and then the transistor 1 is turned on for an arbitrary period of time.
Turn OFF to make terminal P electrically floating. When reflected light from the object is made incident on the dielectric layer of the capacitor 8 in this state, a charge proportional to the amount of irradiated light formed on the dielectric layer is injected into the terminal P, and the potential of the terminal P depends on the amount of incident light. Change. By detecting this displacement potential, it becomes possible to detect the incident light signal, and it is possible to image the subject. On the other hand, in order to make a hard copy, the liquid crystal cell 7 is irradiated with light while the image is being displayed, and the liquid crystal cell 7 is
The light can be incident on the photosensitive paper through the .

Next, a specific structure of the solid-state cell corresponding to one pixel will be explained. FIG. 3 is a sectional view showing the cell structure, and FIGS. 4 a to 4 c are sectional views showing the manufacturing process thereof. First, as shown in FIG. 4a, a first conductor film 12 made of Mo, Al, etc. is selectively formed on a glass substrate (transparent substrate) 11, and then CVD-
A transparent first insulating film 13 made of SiO ₂ film was deposited. Here, the conductor film 12 is the transistor 1
The insulating film 13 forms the gate oxide film of the transistor 1. Next, as shown in FIG. 4b, In ₂ O ₃ is deposited on the insulating film 13.
A second conductor film 14 made of a transparent conductor was selectively formed. Here, the conductor film 14 forms one electrode of the capacitor 8. Subsequently, a high-resistance amorphous Si film having photoconductivity was patterned over the entire surface so that the Si film remained on the first and second conductor films 12 and 14. As a result, the channel portion 15 of the transistor 1 and the dielectric layer 16 of the capacitor 8 were formed.

Next, as shown in FIG. 4c, a conductor film was deposited on the entire surface, and this conductor film was patterned to form third conductor films 17a and 17b, as well as a first window 18 for light transmission. . Here, the conductor film 17a
is connected to the data line 5, and the first conductor film 12 forming the gate 2 is connected to the address line 3. The conductor film 17b forms the other electrode of the capacitor 8. Also,
Consists of channel portion 15, gate 12, etc.
The MOS transistor 1 is a so-called staggered type thin film transistor formed in a thin film.
Note that 19a, 19b, and 19c in FIG. 4c indicate ohmic layers for lowering the contact resistance between the conductive film and the amorphous Si film, respectively.

Next, as shown in FIG. 4d, a second insulating film (transparent insulating layer) 19 made of a transparent material was deposited on the entire surface, and a contact hole 20 was formed on the third electrode 17b of this insulating film 19. . Next, the fourth
As shown in Figure e, a fourth conductor film (opaque conductor layer) 21 was deposited on the entire surface, and a second window 22 for light transmission was formed in this conductor film 21. Here, the conductor film 21
constitutes one electrode of the liquid crystal cell 7. From this point on, just like a normal liquid crystal display device,
As shown in FIG. 3, a first alignment layer 23, a liquid crystal layer (display material layer) 24, a second alignment layer 25, a fifth conductor film (transparent conductor layer) 26, a glass plate 27, and a polarizing layer 2
A solid cell can be obtained by laminating 8 in the above order and further applying an optical anti-reflection film 29 to the lower surface of the substrate 11. The solid cell thus obtained corresponds to one pixel 9 shown in FIG.
As shown in the figure, they are arranged in a matrix on a substrate 11. In addition, in Fig. 5, 40 ₁ , ~,
40n corresponds to the above-mentioned solid cells, 30 is an object placed in close contact with or close to the lower surface of the substrate 11, 30a is a black portion, and 30b is a white portion.

Next, the operation of the present device in which solid cells having the above structure are arranged in a matrix will be explained.

First, when performing imaging, the above-mentioned figures 3 and 5
As shown in the figure, an object 30 such as paper on which letters, numbers, etc. are written is placed in close contact with the lower surface of the glass substrate 11.
When light is irradiated onto the upper surface side of the substrate 11 in this state,
Light enters the substrate 11 through the windows 18 and 22. This incident light (indicated by a one-dot chain line Q in the figure) is reflected by a subject 30 disposed in close contact with the lower surface of the substrate 11, and the reflected light (indicated by a one-dot chain line R in the figure) is transmitted to the first insulating film 13 and The amorphous amorphous material that is the dielectric layer 16 of the capacitor 8 passes through the second conductive film 14.
The Si film is irradiated. Electron and hole pairs are formed in the dielectric layer 16 in accordance with the amount of reflected light. Here, if the transistor 1 is turned on in advance and a guest-host (GH) type is used as the liquid crystal layer 24, a voltage of about 6 [V] is applied to the third conductive film 17b, which is the floating terminal P. After that, transistor 1 is turned off during the signal charge accumulation period. In this state, liquid crystal layer 2
4 is transparent, and if the second conductive film 14 is set to around 0 [V], the third conductive film 1
Electrons are injected into 7b and stored as signal charges. Furthermore, the holes flow through the second conductor film 14 and are removed to the outside. Then, the potential of the third conductive film 17b decreases according to the amount of injected charge.

Here, the amount of signal charge injected into the third conductor film 17b is equal to the amount of signal charge injected into the third conductor film 17b.
It depends on the amount of reflected light from 0. The amount of light reflected from the subject 30 depends on image information such as letters and numbers written on the subject 30. Therefore, the amount of accumulated signal charges injected into the third conductive film 17b is
The conductor film 17b corresponds to the image information of
The potential decrease also corresponds to the above image information. Therefore, after the signal charge accumulation period ends, the transistor 1 is turned on and a new preset voltage is applied to the third conductor film 17b, and at this time, the data line 5
By detecting the charging current flowing through the sensor, the image information can be electrically detected. In other words, the amount of signal charge accumulated in each of the solid-state cells 40 ₁ , .

In addition, when displaying an image, the subject 30
Since the antireflection film 29 is present on the lower surface of the glass substrate 11, the incident light Q is transmitted below the substrate 11 without being reflected on the lower surface of the substrate. This transmitted light is indicated by a broken line S in FIG. Therefore, the reflected light R is transmitted to the dielectric layer 16 of the capacitor 8.
It never enters. Furthermore, the glass substrate 11
By arranging, for example, a member with large light absorption on the lower surface side of the substrate 11, it is possible to prevent the transmitted light S from entering the substrate 11 again. Therefore, in this state, an image can be displayed by applying a display signal voltage to the liquid crystal cell 7 of a desired solid state cell by selecting the address line 3 and data line 5.

On the other hand, when making a hard copy, in the image display mode, that is, with a desired image displayed on the liquid crystal cell 7, if uniform light is irradiated onto the top surface of the glass substrate 11 using photosensitive paper instead of the subject 30, the liquid crystal Light enters into the substrate 11 through the cell 7 and the windows 22 and 18, and this incident light Q is irradiated onto the photosensitive paper. Here, the intensity of the light passing through the liquid crystal layer 24 varies according to the display operation mode of the liquid crystal cell 7. That is, the incident light Q has a light transmittance modulated according to the display operation mode of the liquid crystal cell 7, and the light transmittance modulated incident light Q is irradiated onto the photosensitive paper. Therefore, by developing and fixing the photosensitive paper, a hard copy of the pattern displayed on the liquid crystal cell 7 can be obtained, that is, printing can be performed.

The configuration and operation up to this point are the same as the previous application,
This embodiment differs from the previous application in that the drive circuit shown in FIG. 6 is provided to increase the contrast and dynamic range during imaging. That is, the drive circuit includes the first display signal processing circuit 61,
It is composed of a second display signal processing circuit 62, an imaging signal processing circuit 63, and a switch circuit 64. The first display signal processing circuit 61 is for applying a display signal to the liquid crystal cell 7 in the display mode. The second display signal processing circuit 62 is for applying a display signal voltage, which will be described later, to the liquid crystal cell 7 in the imaging mode. Also,
The imaging signal processing circuit 63 is for obtaining a display signal corresponding to an image signal obtained in the imaging mode. In addition, 65 in the figure is formed by arranging a plurality of the solid cells 40 ₁ to 40n.
Shows a TFT (Thin Film Transistor) panel.
66 indicates its driver circuit.

In such a configuration, first, in the display mode, a display signal is applied to the terminal
₁ to 40n. In the imaging mode, first, the first display signal processing circuit 61 sets the transmittance of each liquid crystal cell in the cells 40 ₁ to 40n to a high state and performs first imaging. In this case, charges proportional to the intensity of reflected light from the surface of the subject 30 are generated and accumulated in the cells 40 ₁ , . . . , 40n. The signal voltage due to the signal charges accumulated in the cells 40 ₁ to 40n is input to the imaging signal processing circuit 63 via the switch circuit 64 and output as an image signal. This image signal is converted into a display signal voltage by the second display signal processing circuit 62,
The voltage is again applied to the cells 40 ₁ , .about.40n via the switch 64 . Here, the second display signal processing circuit 62 outputs a display signal voltage that lowers the transmittance of the liquid crystal cells on the black portion 30a and increases the transmittance of the liquid crystal cells on the white portion 30b based on the input image signal. do. As a result, the reflected light from the subject 30 of the light beam incident on the liquid crystal cell on the white area 30b is the same as in the first imaging, but the reflected light incident on the liquid crystal cell on the black area 30a is reflected by the liquid crystal cell. It can be lowered. For example, when a twisted nematic (TN) material is used as a liquid crystal cell, its black-and-white contrast ratio is 30 to 40:1, so the intensity of reflected light from the surface of the black part 30a is 1/30 to 40 times that of the conventional one.
decreases to In this state, second imaging is performed and an image signal is output from the image signal processing circuit 63. The contrast of the image signal thus obtained is 30 to 40 times greater than that of the conventional method. Therefore,
Conventionally, when the surface of the black portion 30a is glossy, the contrast ratio of the image signal deteriorates, but this significantly improves the contrast ratio.

In this way, this device can perform not only display but also imaging and hard copying, although the basic one-pixel equivalent circuit is similar to that of a liquid crystal display device. In other words, this device is not just a conventional display panel, but a DIP (Display/Imaging/Printing) panel with display, imaging, and printing functions. The D, I, and P functions can be used independently, or two functions such as D and I can be used in combination. In addition, the degree of integration of one solid-state cell is approximately the same as one pixel of a conventional liquid crystal display device, and the cell can be easily manufactured using current semiconductor manufacturing technology, so this device can be put to practical use. It is highly sexual. Furthermore, since it is possible to increase the contrast and dynamic range of image signals during imaging, it is possible to obtain image information with high SN.

Next, a second embodiment of the present invention will be described. This embodiment adds a memory cell to the first embodiment described above, and calculates the difference between the image signal obtained by the second imaging and the display signal voltage applied to the solid-state cell during the second imaging. It was designed to be taken. That is, solid cells 40 ₁ , . . . , 4 are provided on the substrate 11.
A plurality of memory cells are provided corresponding to 0n, respectively. These memory cells each store the display signal voltage output from the second display signal processing circuit 62 at the time of second imaging, and for example,
It is formed from a MOS transistor and a MOS capacitor.

Even with such a configuration, it goes without saying that the three functions of imaging, display, and copying can be obtained as in the previous embodiment. In this case, since the difference between the image signal obtained by the second imaging and the signal voltage stored in the memory cell is output as an image signal, there is an effect that the contrast of the image signal is further improved. That is, in the first embodiment described above, the sum of the display signal voltage applied to the liquid crystal cell during the second imaging and the voltage that fluctuated due to the incidence of reflected light from the subject is extracted as an image signal.
In this embodiment, the above variation is extracted as an image signal. Since this variation is superimposed with the change in the transmittance of the liquid crystal cell due to the display signal voltage applied to the liquid crystal cell during the second imaging, it is larger than the variation due to the first imaging, and is therefore higher. This provides contrast.

Next, a third embodiment of the present invention will be described. This embodiment differs from the first embodiment in that instead of providing the drive circuit, the voltage applied to the solid-state cell during imaging, that is, the display signal voltage applied to the liquid crystal cell, is controlled. That is, the display signal voltage is set to a value that is larger than the value at which the transmittance of the liquid crystal cell is approximately maximum, and at which the transmittance of the cell decreases before the potential of the cell, which changes due to imaging, reaches the saturated accumulation signal potential. It was designed to do so.

FIG. 7a is a schematic diagram showing the dependence of liquid crystal transmittance on TFT potential Vt. As shown in the figure, the transmittance increases as Vt increases. and
If the signal charge accumulated in the TFT cell is an electron, then
By irradiating the TFT cell with light, the Vt decreases and the transmittance of the liquid crystal cell decreases. In other words, Vt is
It changes as Va→Vb→Vc→Vd. In this embodiment, the set potential of the TFT cell in the first imaging operation is
The initially set potential Vt (Va in the figure) is set so that Vt changes to a potential between Vb and Vd in the figure, for example, Vc, due to the reflected light from the white surface portion 39b of the subject 30. In other words, the potential is set to the potential Va in a region where the transmittance of the liquid crystal cell is a constant light transmittance level, and the potential decreases by irradiating the TFT cell with light.
The potential Vc in the area where the transmittance decreases
If the signal charge amount Qsig is set to change over time during constant irradiation, the amount of signal charge Qsig accumulated in the TFT cell changes as shown in FIG. 7b. As can be seen from this figure, the period up to time Tb is a period in which the potential Va of a changes to Vb, and the transmittance is constant. Since the transmittance is constant, Qsig increases in proportion to T.
If the time is longer than this, the transmittance decreases, so the increase in Qsig decreases. And in Ta
TFT cell is at a level where Qsig cannot be accumulated any more
Reach Qsat. Also, up to the low transmittance region of a
If Vt decreases before reaching Qsat, the increase in Qsig decreases further as shown by the dashed line in b, and Qsat
The arrival time extends to Tc. In such a situation,
The TFT cell that should accumulate signal charge is saturated,
Peripheral TFT of reflected light from the subject surface in this area
The diffused light will cause fog on the reproduced image, but in this embodiment, the liquid crystal cell in this area is in a low transmittance region, so this can be reduced.

Figure 7c shows the image signal when using this method.
The dependence of Vsig on object surface contrast I is shown.
As shown in this, up to the contrast Ic
Vsig is proportional to I, but the increase becomes gradual beyond this value. In other words, the transmittance of the liquid crystal cell is the first
Compared to the saturation contrast level Ib which is set to always be in region I when imaging, contrast up to Ia can be discerned, and the dynamic range is expanded. In the above description, it is sufficient that the transmittance of the liquid crystal cell is reduced by light irradiation to the TFT cell, and it goes without saying that the signal charge may be a hole.

Thus, according to this embodiment, not only the same effects as the first embodiment, but also the contrast and contrast of the image signal can be improved by simply setting the display signal potential at the time of photographing, without providing any special drive circuit or the like. There are advantages such as increased dynamic range.

Note that the present invention is not limited to the embodiments described above. For example, the amorphous Si film serving as the dielectric layer of the capacitor may have a Pi structure of the amorphous Si film in order to obtain high resistance. Furthermore, instead of the amorphous Si film, any photoconductive film having photoconductivity can be used. Furthermore, it is also possible to form the channel portion of the MOS transistor with a photoconductive film instead of the dielectric layer of the capacitor. In this case, if the structure is such that the reflected light from the bottom surface of the transparent substrate enters the channel part, the carrier electrons formed in the channel part will be accumulated in the capacitor, and the dielectric layer of the capacitor will be formed with a photoconductive film. You can get the same effect as you did. Furthermore, by forming the dielectric layer and the channel portion with a photoconductive film, it is also possible to improve the imaging sensitivity. Furthermore, the structures of the transistor and capacitor are not limited to those shown in FIG. 3, and may be changed as appropriate depending on the use. Further, the display material layer of the display cell is not limited to liquid crystal, but may be any material whose light transmittance can be varied by applying a voltage, for example, an electrochromic material may be used. Furthermore, the configurations and materials of the alignment layer, polarizing layer, glass substrate, and conductor layer for display cells are not limited to the examples, and can be changed as appropriate depending on the use.

Further, in the first embodiment, the image is captured twice, but it is also possible to further improve the image quality by displaying the image signal from the second image capture again.
Furthermore, the first imaging signal may be processed and re-displayed to perform the second imaging. Examples include contour enhancement processing, contour extraction processing, paper surface stain correction processing, and the like. In addition, various modifications can be made without departing from the gist of the present invention.

[Brief explanation of the drawing]

FIG. 1 is an equivalent circuit diagram showing the configuration of one pixel of the optical solid-state device according to the first embodiment of the present invention, FIG. 2 is a plan view showing the arrangement of the one pixel, and FIG. 4a to 4e are sectional views showing the manufacturing process of the solid cell, and FIG. 5 is a sectional view showing a panel formed by arranging the solid cells in a matrix. FIG. 6 is a block diagram showing the drive circuit for the solid-state cell, and FIG.
Figures a to c are schematic diagrams for explaining the third embodiment. 1...MOS transistor, 2...gate, 3
... Address line, 4 ... Source, 5 ... Data line, 6 ... Drain, 7 ... Liquid crystal cell (display cell), 8 ... Capacitor, 9 ... Pixel, 10 ...
Panel, 11...Glass substrate, (transparent substrate), 12
...First conductor film, 13...First insulating film, 14
...Second conductor film, 15...Channel portion, 16
...Dielectric layer, 17a, 17b...Third conductor film,
18, 22... Window portion, 19... Second insulating film (transparent insulating layer), 21... Fourth conductor film (opaque conductor layer), 23, 25... Alignment layer, 24... Liquid crystal (display material layer), 26...Fifth conductor layer (transparent conductor layer), 27...Glass plate, 28...Polarizing layer, 29
...Anti-reflection film, 30...Subject, 40 ₁ , ~,
40n...Solid cell, 61...First display signal processing circuit, 62...Second display signal processing circuit, 63
...imaging signal processing circuit, 64...switch circuit, 65...TFT panel, 66...driver circuit.

Claims (1)

[Scope of Claims] 1. A MOS transistor provided on the upper surface side of the transparent substrate and having its gate connected to an address line and its source connected to a data line, and one of the MOS transistors provided on the upper surface side of the substrate. a capacitor whose electrode is connected to the drain of the transistor;
an opaque conductor layer deposited on the upper surface of the transistor and capacitor via a transparent insulating layer and connected to the drain; a display material layer formed on the conductor layer and whose light transmittance can be varied by voltage application; and the material. The display cell includes a display cell made of a transparent conductor layer deposited on the substrate, a window portion that allows light from the top surface of the substrate to enter the bottom surface of the substrate, and an antireflection film deposited on the bottom surface of the substrate. and at least one of the channel portion of the transistor and the dielectric layer of the capacitor is formed of a photoconductive film, and a plurality of solid cells each consisting of the transistor, the capacitor, the display cell, and the window portion are arranged on the substrate. In the optical solid-state device, light is irradiated through the window onto an object placed on the lower surface of the substrate, and signal charges accumulated in the capacitor are transmitted to the outside as an image by the reflected light from the object. a first imaging means for taking out the image signal as a signal; and for the image signal taken out by the imaging means, the transmittance of the display cell is lowered when the signal is small, and the transmittance is increased when the signal is large; A driving means for converting the signal voltage into a signal voltage and applying this signal voltage to the same display cell when the above image was taken, and performing a second imaging in the same manner as the first imaging with the voltage applied by the driving means. An optical solid-state device characterized by comprising a second imaging means. 2. A MOS transistor provided on the upper surface of the transparent substrate and having its gate connected to the address line and its source connected to the data line, and a MOS transistor provided on the upper surface of the substrate and having one electrode connected to the drain of the transistor. a capacitor connected to
an opaque conductor layer deposited on the upper surface of the transistor and capacitor via a transparent insulating layer and connected to the drain; a display material layer formed on the conductor layer and whose light transmittance can be varied by voltage application; and the material. The display cell includes a display cell made of a transparent conductor layer deposited on the substrate, a window portion that allows light from the top surface of the substrate to enter the bottom surface of the substrate, and an antireflection film deposited on the bottom surface of the substrate. and at least one of the channel portion of the transistor and the dielectric layer of the capacitor is formed of a photoconductive film, and a plurality of solid cells each consisting of the transistor, the capacitor, the display cell, and the window portion are arranged on the substrate. In the optical solid-state device, light is irradiated through the window onto an object placed on the lower surface of the substrate, and signal charges accumulated in the capacitor are transmitted to the outside as an image by the reflected light from the object. a first imaging means for taking out the image signal as a signal; and a signal for lowering the transmittance of the display cell when the signal is small and increasing the transmittance of the image signal taken by the imaging means when the signal is large; A driving means that converts the signal voltage into a voltage and applies this signal voltage to the same display cell when the image is taken; and a drive means that is provided corresponding to each transistor and stores the voltage applied to the display cell by the driving means. a memory cell that
A second image capturing is performed in the same way as the first image capturing while the voltage by the driving means is applied, and the difference between the image signal obtained at this time and the signal voltage stored in the memory cell is extracted as an image signal. An optical solid-state device characterized by comprising an imaging means. 3. A MOS transistor provided on the top surface of the transparent substrate and having its gate connected to the address line and its source connected to the data line, and a MOS transistor provided on the top surface of the substrate and having one electrode connected to the drain of the transistor. a capacitor connected to
an opaque conductor layer deposited on the upper surface of the transistor and capacitor via a transparent insulating layer and connected to the drain; a display material layer formed on the conductor layer and whose light transmittance can be varied by voltage application; and the material. The display cell includes a display cell made of a transparent conductor layer deposited on the substrate, a window portion that allows light from the top surface of the substrate to enter the bottom surface of the substrate, and an antireflection film deposited on the bottom surface of the substrate. and at least one of the channel portion of the transistor and the dielectric layer of the capacitor is formed of a photoconductive film, and a plurality of solid cells each consisting of the transistor, the capacitor, the display cell, and the window portion are arranged on the substrate. In the optical solid-state device, light is irradiated through the window onto an object placed on the lower surface of the substrate, and signal charges accumulated in the capacitor are transmitted to the outside as an image by the reflected light from the object. During the imaging operation to be taken out as a signal, the voltage applied to the display cell is set to be greater than a value at which the transmittance of the display cell is approximately maximum, and the potential of the display cell that changes due to imaging reaches a saturated accumulation signal potential. An optical solid-state device characterized in that the transmittance of the display cell is set to a value that decreases the transmittance of the display cell.