JPH0566018B2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an IC lead bonding device, and more specifically, the present invention relates to an IC lead bonding device, and more specifically, a lead bonding device for IC leads (or chip bonding fingers) on a tape carrier formed in a tape carrier method (TAB method). , hereinafter the same) and their connection terminals provided on the chip are overlapped via bumps, and the leads can be continuously and efficiently bonded by heating in gigantic bonding, in which many leads are bonded at once. This invention relates to a lead joining device.

[Conventional technology]

Generally, in the TAB method, a metal foil such as copper is laminated on the surface of a thin film-like tape made of synthetic resin such as polyimide, and this is etched to form a large number of leads. A bump made of metal or the like is adhered by transfer or the like to the finger portion) or the terminal portion of the semiconductor chip, and the leads and the terminals of the semiconductor chip are connected via this bump.

The connection is made by placing a plurality of lead connection terminals of the IC chip or an IC body equipped with the IC chip with a plurality of leads formed on the tape carrier and stacking them via bumps. A contact heating mechanism that brings a heating tool heated to 450°C to 500°C into contact with the lead, and a heating tool that is heated to 50°C
A lead bonding device is used that includes a polishing mechanism that cleans the contact surface with a ceramic grindstone after making contact approximately 100 times to 100 times. In this case, the cleaning process is necessary for
This is because the tin or the like used to plate the leads is transferred to the contact surface of the heating tool, staining the contact surface and reducing the reliability of the bonding. Therefore, cleaning by polishing is performed not only during the number of times of joining described above, but also whenever the heating tool becomes dirty.

[Problem to be solved]

The heating tools of such lead bonding devices generally have a built-in cartridge heater, etc., and are configured to uniformly heat the lead contact surface, but cleaning treatment etc. When the temperature drops, it takes at least 15 to 20 seconds or more to recover the bonding temperature. For example, if polishing is performed for about 10 seconds after making contact with the heating tool about 50 to 100 times, the temperature of the contact surface of the heating tool decreases to about 400°C. Therefore, for the next joining, the contact surface joining temperature of the heating tool should be adjusted.
Reheating time is required to recover the temperature to 450°C.

Therefore, the IC chips transported by the TAB method are not bonded during this reheating time.
You will have to wait. As a result, this results in waiting time in the bonding process, reducing IC manufacturing efficiency.

The present invention solves the problems of the prior art, and aims to provide an IC lead bonding device that can perform lead bonding continuously and efficiently.

[Means to solve the problem]

This invention to achieve such purpose
The structure of an IC lead bonding device consists of multiple terminals for connecting the leads of the IC chip or the IC body equipped with the IC chip, which are arranged in a stacked manner through bumps, and the terminals are formed on a tape carrier. A heating member having an internal heater is used to heat and bond a plurality of leads formed as a frame by contacting the plurality of leads, and the contact surface of the heating member is polished to remove dirt adhering to the contact surface. The IC lead bonding apparatus includes a polishing mechanism, and is provided with a heater that comes into contact with the contact surface during or after polishing and heats the contact surface to a temperature near the bonding temperature.

[Effect]

In this way, if the contact surface is heated directly from the outside during or after polishing, the temperature of the contact surface that has dropped can be recovered to the bonding temperature in a short time, and the temperature of the contact surface can be recovered to the bonding temperature in a short time. Continuous bonding processing can be performed with almost no waiting time on the lead side.

〔Example〕

Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a plan view of the TAB bonding part of an embodiment to which the IC lead bonding apparatus of the present invention is applied, FIG. 2 is an explanatory diagram of the bonding processing operation, and FIG.
The figure is an explanatory diagram of a polishing mechanism according to another embodiment of the present invention.

In FIG. 1, reference numeral 1 denotes a tape carrier transported by the TAB method, on which leads 2, 2, . . . are formed. . The leads 2, 2, . . . are formed, for example, by laminating a metal foil such as copper on the surface of the base of the tape carrier 1 and then etching this.

3, 3, . . . are test pads which are later separated from the lead 2 along a cutting line 6 shown by a dashed line. A rectangular portion 4 located approximately in the center of the tape carrier 1 is an opening provided in the tape carrier 1, and an IC chip 5 is placed below the opening 4 located at the joining position. It is located.

The IC chip 5 is transported to an IC transport mechanism 8 such as a rotating disk provided below the tape carrier 1.
(See FIGS. 2a and 2b) and is transported while being placed on the circumferential surface (or surface) of the opening 4 at the bonding position. At this time, the leads 2, 2, ... on the upper side and the IC chip 5 on the lower side
The terminals are positioned so that they overlap with each other via the bump 7, as shown in FIGS. 2a and 2b. Note that 1a in FIG. 1 is a hole into which a sprocket or the like is inserted, and is for conveying the tape carrier 1.

The lead joining device 10 is connected to this tape carrier 1.
arranged in parallel and adjacent to each other in the conveying direction,
A movable table 11 that moves forward and backward in the X direction that corresponds to the conveyance direction of the tape carrier 1, a heating tool 12, and a Y direction that is perpendicular to the movable table 11.
It is provided with a heating tool moving mechanism 13 and the like that moves the heating tool forward and backward in the Z direction, which is the up and down direction. Here, a heating contact mechanism is configured by the heating tool 12 and the heating tool moving mechanism 13,
A heating tool moving mechanism 13 is positioned to correspond to the above-mentioned joining position, is independent of the moving table 11, and is fixed to the base 17.

The movable table 11 is slidably supported on a base 17, is equipped with a rotary polishing mechanism 14, and a heating block 15 having a disk-shaped contact surface, and is moved in the X direction by driving a cylinder 16. The amount of movement (stroke) corresponds to the spacing between these centers. Therefore, the heating block 15 is located below the heating tool 12 when the heating tool 12 is in the standby state (or the initial state, the state shown in FIG. 1), and the rods of the cylinders 16 correspond to the above-mentioned spacing. The rotary polishing mechanism 14 is positioned below the heating tool 12 when the heating tool 12 is extended with a stroke. Further, when the rod of the cylinder 16 is contracted in this state, the heating block 15 is positioned below the heating tool 12 and returns to the original initial state. Reference numeral 20 is in a controlled state and has a microprocessor, memory, etc. inside, and controls the cylinder 16, heating tool moving mechanism 13, etc.
For this control, as shown in FIG. 2a, the heating tool moving mechanism 13 is driven to move the heating tool 12 in the standby state (the state shown in FIG. 1) into the opening 4 provided in the tape carrier 1. Move it to the top and then lower the heating tool 12 to heat the IC chip 5.
Multiple terminals and tape carrier 1 for connecting the leads of
The leads 2, 2, . . . formed above are brought into contact with the leads 2, 2, . In addition, in a of FIG. 2, 12a
is a cartridge heater built into the heating tool 12, and 12b is its contact surface. Note that the leads 2, 2, ... and the terminals of the IC chip 5 are superimposed on the tape carrier 1 or the IC chip 5.
This is done by relatively moving one of the IC transport mechanisms 8 that transported the IC and finely positioning it.

The control device 20 internally counts the number of times of joining each time, and when the number of times reaches, for example, 50, it drives the cylinder 16 forward to move the rotary polishing mechanism 14 to the lower side of the heating tool 12 (FIG. 3). ), and the heating tool 12 is lowered to bring its contact surface 12b into contact with the grindstone 14a for rotational polishing. As a result, dirt adhering to the contact surface 12b is removed, and the contact surface 12b is cleaned. This cleaning process usually takes about 10 seconds. When this polishing is completed, the control device 20
control to raise the heating tool 12 (second
(see state a in the figure), drive the cylinder 16 backward to place the heating block 15 below the heating tool 12 as shown in a in Fig. 2, and then lower the heating tool 12 and then The contact surface 12b is brought into contact with the surface of the heating block 15 to heat it. In addition,
15a is a heater built into the heating block 15.

Normally, the surface of the contact surface 12a after polishing drops to about 400°C as described above, but this is the surface and the cartridge heater 12a is provided inside the heating tool 12, so the internal temperature is It hasn't fallen that far. However, since the contact surface 12b contributes to bonding, it is necessary to quickly raise the temperature of this surface to the bonding temperature. . Therefore, by contact heating the contact surface 12b directly from the outside as described above, the contact surface 12b is immediately brought to the bonding temperature.
The temperature of 2b can be restored. Note that the surface temperature of the heating block 15 in this case is preferably set to 450° C., which is the heating bonding temperature, or a temperature slightly higher than that.

After bringing the contact surface 12b into contact with the heating block 15 for several seconds, the control device 20 raises the heating tool 12, positions it at a standby position for the joining process, and moves on to the next joining process. By doing this, the temperature of the contact surface 12a of the heating tool 12 can be recovered to the bonding temperature in a short time, and after the polishing process, the tape carrier 1 side or the IC transport mechanism 8 side that transports the IC chip can be Continuous bonding processing can be performed with almost no waiting time.

FIG. 3 shows an example in which the heating block 15 is placed below the grindstone 14a and polishing is carried out at a temperature of about 450° C. of the grindstone 14a. . With this configuration, the temperature of the contact surface 12b does not need to decrease even during polishing. In this case, the heating block 15 in FIG.
Since the rotary polishing mechanism 14 can be placed at the position, the cylinder 16 becomes unnecessary. Further, 15b is a cartridge heater built into the heating block 15.

Although the above has been explained, the configuration of the lead bonding device shown in the embodiment is just an example, and the heating block 15
The position of the heater of the invention shown as is not limited to the embodiment. In addition, the heating temperature is
As long as it is around the bonding temperature, it may be slightly higher or lower than the bonding temperature.

Further, in the embodiment, an example is given in which an IC chip is bonded to a lead, but this may be not the IC chip itself but an IC body in which the IC chip is mounted on a film substrate, a ceramic substrate, or the like.

Although the embodiment uses the TAB method as an example, it goes without saying that the present invention can also be applied to the case where an IC chip is bonded to a lead frame.

〔Effect of the invention〕

As can be understood from the above explanation, in the present invention, if the contact surface is directly contact heated from the outside during or after polishing, the decreased temperature of the contact surface can be recovered to the bonding temperature in a short time. It is possible to perform continuous bonding processing without having to wait for the IC chip side or the lead side transported by TAB.

[Brief explanation of drawings]

FIG. 1 is a plan view of the TAB bonding part of an embodiment to which the IC lead bonding device of the present invention is applied, FIG. 2 is an explanatory diagram of the bonding process operation, and FIG.
It is an explanatory view of a polishing mechanism of another example of this invention. DESCRIPTION OF SYMBOLS 1...Tape carrier, 2...Lead, 3...Test pad, 4...Opening, 5...IC chip, 10...Lead bonding device, 11...Moving table, 12...Heating tool, 13...Heating tool moving mechanism, 14...Rotary polishing Mechanism, 15... Heating block, 16... Cylinder, 1
7... Base, 20... Control device.

Claims (1)

[Scope of Claims] 1. “IC chips or IC chips equipped with
It has an internal heater that heats and joins the plurality of terminals for connecting the leads of the IC body and the plurality of leads formed on the tape carrier or as a lead frame by contacting the plurality of leads. In an IC lead bonding apparatus comprising a heating member and a polishing mechanism that polishes the contact surface to remove dirt adhering to the contact surface of the heating member, the contact surface is contacted during or after polishing, and the contact surface is removed. An IC lead bonding device characterized by being equipped with a heater that heats the surface at a temperature near the bonding temperature. 2. The polishing mechanism has a rotating polishing plate, and the heater is disposed below the polishing plate, and heating the polishing plate heats the contact surface via the polishing plate. The IC lead bonding device according to claim 1.