JPH0567051B2 - - Google Patents

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a method for manufacturing a semiconductor device.

[Conventional technology]

Conventionally, the manufacturing of a semiconductor device in which a passivation film is applied to a mesa surface is performed as shown in FIG. 2, for example.
Desired elements 2 are formed in a predetermined region of a semiconductor substrate 1, and curved grooves 3 that become mesa surfaces after separating each element 2 are formed. Next, a passivation film 4 is formed on the curved groove 3. Thereafter, the cut region of the curved groove 3 is cut into individual passivation films 4 using a cutting blade such as a diamond scrubber, a laser scrubber, or a single plate dicer to manufacture a semiconductor device consisting of individual elements.

[Problem that the invention seeks to solve]

However, in this conventional semiconductor device manufacturing method, the passivation film 4
When cutting etc. with a diamond scrubber,
Damage such as cracks and chips is likely to occur in the passivation film 4. In addition, in the case where the passivation film 4 and the like are cut by a laser scrubber, the passivation film 4 is easily melted by the laser and thermal strain is generated.
The vapor tends to adhere to the semiconductor substrate 1 and cause contamination. Furthermore, when the passivation film 4 and the like are cut with a blade dicer, damage such as cracks is likely to occur in the passivation film 4. As a result, there was a problem in that highly reliable semiconductor devices could not be obtained at a high yield.

[Means for solving problems]

The present invention includes a step of separating each element of a semiconductor substrate on which a plurality of elements are formed and forming an insulating film in a predetermined pattern on a region to be cut of a curved groove that becomes a mesa surface, and removing the insulating film. forming a passivation film covering the exposed surface of the curved groove;
forming an opening in the insulating film that exposes a predetermined portion of the region to be cut, and cutting the semiconductor substrate into individual elements by bringing a cutting blade into contact with the region to be cut exposed through the opening; A method of manufacturing a semiconductor device includes a step of dividing the semiconductor device into regions.

Here, any cutting blade may be used, such as a diamond scrubber, a laser scrubber, a single-braided dicer, etc.

Further, the insulating film is formed of a SiO ₂ film or the like, and its opening is formed by selective etching. The thickness and shape of the insulating film may be such that it completely covers the area to be cut.

Furthermore, any element may be formed on the semiconductor substrate as long as it has a mesa structure.

[Effect]

According to the method for manufacturing a semiconductor device according to the present invention,
A predetermined portion of the region to be cut of the curved groove, which becomes the mesa surface, is exposed through an opening formed in the insulating film, and the exposed region is cut with a cutting blade. Therefore, damage such as cracks to the passivation film remaining on the meta-plane can be prevented from occurring, and the semiconductor substrate can be accurately divided into regions for each individual element.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

First, as shown in FIG. 1A, a plurality of elements 11 are formed, for example, on a semiconductor substrate 10, in which four semiconductor layers of different conductivity types are alternately laminated to constitute a thyristor. Next, each element 11 is separated, and a curved groove 12 serving as a mesa surface is formed on the semiconductor substrate 10.
For example, it is formed by selective etching. Then,
An insulating film 1 made of, for example, SiO ₂ film is placed on the curved groove 12.
3 is formed and selectively etched thereto to form a patterned insulating film 13 covering the area to be cut of the curved groove 12.
remain.

Next, as shown in FIG. 1B, the short-lived insulating film 1
The exposed surface of the curved groove 12 except for the portion 3 is covered with a glass pinning film 14 by, for example, electrophoresis.

Next, as shown in FIG. 1C, the insulating film 13 is selectively etched to form an opening 15 exposing a predetermined portion of the region to be cut.

Thereafter, a cutting blade of, for example, a diamond scrubber is brought into contact with the region to be cut exposed in the opening 15 to divide the semiconductor substrate 10 into each element 11 to obtain a semiconductor device. In this case, a passivation film 1 is applied to the area in contact with the diamond scrubber.
4 does not exist, and the ends of the passivation film 14 are protected by the insulating film 13, cracks and chips can be prevented from occurring in the passivation film 14, and individual semiconductor devices can be easily obtained. can. The obtained semiconductor device can exhibit high reliability and device characteristics because the mesa surface is covered with a high quality passivation film 14 free of cracks and the like.

Furthermore, when cutting the semiconductor substrate 10 with a single blade dicer or laser scrubber, the area to be cut exposed through the opening 15 can be directly cut, and these cutting blades do not come into contact with the passivation film 14 at all. Moreover, the passivation film 1
Since the end portions of 4 are covered with the insulating film 13, it is possible to easily obtain a semiconductor device in which the high quality passivation film 14 remains on the mesa surface.

〔Effect of the invention〕

As explained above, according to the method for manufacturing a semiconductor device according to the present invention, damage such as cracks is prevented from occurring in the passivation film, and the semiconductor substrate is accurately divided into regions for each individual element. , it is possible to obtain highly reliable semiconductor devices at a high yield.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram showing an embodiment of the present invention in the order of steps, and FIG. 2 is an explanatory diagram of a conventional method of manufacturing a semiconductor device. 10...Semiconductor substrate, 11...Element, 12...
Curved groove, 13... Insulating film, 14... Passivation film, 15... Opening.

Claims (1)

[Claims] 1. A step of separating each element of a semiconductor substrate on which a plurality of elements are formed and forming an insulating film in a predetermined pattern on a region to be cut of a curved groove that becomes a mesa surface, and cutting the curved groove excluding the insulating film. forming a passivation film to cover the exposed surface of the insulating film, forming an opening in the insulating film to expose a predetermined portion of the region to be cut, and applying a cutting blade to the region to be cut exposed through the opening. A method of manufacturing a semiconductor device, comprising the step of abutting the semiconductor substrate to divide the semiconductor substrate into regions for each of the elements.