JPH056764B2 - - Google Patents
Info
- Publication number
- JPH056764B2 JPH056764B2 JP60167954A JP16795485A JPH056764B2 JP H056764 B2 JPH056764 B2 JP H056764B2 JP 60167954 A JP60167954 A JP 60167954A JP 16795485 A JP16795485 A JP 16795485A JP H056764 B2 JPH056764 B2 JP H056764B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- zno
- dielectric
- nio
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 description 12
- 229910006404 SnO 2 Inorganic materials 0.000 description 7
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 239000000654 additive Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
〔産業上の利用分野〕
この発明は、マイクロ波やミリ波等の高周波領
域において高誘電率で高いＱ値を有する高周波用
誘電体磁器組成物に関する。
〔従来の技術〕
マイクロ波やミリ波等の高周波領域いおいて、
誘電体磁器は誘電体共振器やMIC用誘電体基板
等に広く利用されている。
従来、この種の誘電体磁器として例えばTiO2
−ZrO2−SnO2−ZnO−NiO系の材料が知られて
いる（特公昭55−34526号公報）。
しかしながら上記材料のＱ値は、1GHzで
25000、4GHzで12000、7GHzで7000のレベルであ
つた。そのため、例えば低い周波数（例えば
800MHz）でハイパワーの回路の誘電体共振器等
に使用しようとしても、発熱が大きくて温度不安
定となつて使用することはできない。また、4G
Hzや10GHz近辺の誘電体共振器としてもＱ値が低
くて使用することができない場合がある。
そこで、TiO2−ZrO2−SnO2−ZnO−NiO系の
材料のZnOまたはNiOの代わりにTa2O5を添加す
ることによつてＱ値の改善を図つた高周波用誘導
体磁器組成物が、特開昭58−51406号公報及び特
開昭58−217465号公報にそれぞれ提案されてい
る。前者における誘電体磁器組成物は、TiO222
〜43重量％、ZrO238〜58重量％、SnO29〜26重
量％を主成分としこれにZnOを７重量％以下、
Ta2O5を５重量％以下添加したものであり、後者
のそれは、前者のZnOの代わりにNiOを10重量％
以下添加したものである。
〔発明が解決しようとする問題点〕
上記公報開示の材料においては、Ｑ値は改善さ
れるもののそれでも7GHzにおいて8000程度止ま
りである。また焼結性に更に改善の余地がある。
したがつてこの発明は、更にＱ値及び焼結性の
改善を図つた高周波用誘電体磁器組成物を提供す
ることを目的とする。
〔問題点を解決するための手段〕
この発明の高周波用誘電体磁器組成物は、
TiO222〜43重量％、ZrO238〜58重量％、SnO29
〜26重量％を主成分とし、これにZnOを７重量％
以下、NiOを10重量％以下、Sb2O5を７重量％以
下添加含有してなるものである。
上記した組成範囲に限定した理由は次のとおり
である。即ち、TiO2が22重量％未満では誘電率
（ε）が低下し、43重量％を越えると誘電率の温
度係数（TC）が＋側で大きくなり過ぎる。また
ZrO2が38重量％未満になり、あるいは58重量％
を越えると誘電率の温度係数（TC）が＋側で大
きくなり過ぎる。またSnO2が９重量％未満では
誘電率の温度係数（TC）が＋側で大きくなり過
ぎると共にＱが低下し、26重量％を越えると誘電
率の温度係数（TC）が−側で大きくなり過ぎる。
次に添加物の内、ZnOが７重量％を越えると誘
電率及びＱが低下し、NiOが10重量％を越える、
あるいはSb2O5が７重量％を越えるとＱが低下
し、いずれも実用に供さなくなる。
〔実施例〕
以下、この発明を実施例に従つて詳述する。
原料として高純度のTiO2、ZrO2、SnO2、
ZnO、NiO、Sb2O5を用い、第１表の組成比率の
磁器が得られるように秤量し、16時間湿式混合し
た。次いで、脱水、乾燥し、得られた混合原料を
2500Kg／cm2の圧力で直径12mm、厚み６mmの円板に
成形した。引続き成形物を自然雰囲気中1350〜
1450℃の温度で４時間焼成して磁器試料を得た。
各磁器試料について25℃、7GHzにおける誘電
率（ε）、Ｑ及び共振周波数の温度係数（TC）の
各電気的特性を測定し、その結果を第１表に表し
た。
第１表中＊印はこの発明の範囲外のものであ
り、それ以外は全てこの発明の範囲内のものであ
る。
[Industrial Field of Application] The present invention relates to a high frequency dielectric ceramic composition having a high dielectric constant and a high Q value in a high frequency region such as microwaves and millimeter waves. [Conventional technology] Considering high frequency regions such as microwaves and millimeter waves,
Dielectric ceramics are widely used in dielectric resonators, dielectric substrates for MIC, etc. Conventionally, as this type of dielectric porcelain, for example, TiO 2
-ZrO 2 -SnO 2 -ZnO-NiO type materials are known (Japanese Patent Publication No. 34526/1983). However, the Q value of the above material is
The level was 25,000, 12,000 at 4GHz, and 7,000 at 7GHz. Therefore, for example at low frequencies (e.g.
Even if you try to use it as a dielectric resonator in a high-power circuit (800MHz), it generates a lot of heat and becomes unstable, making it impossible to use it. Also, 4G
Even as a dielectric resonator in the vicinity of Hz or 10 GHz, the Q value may be too low to be used. Therefore, a high-frequency dielectric ceramic composition with an improved Q value by adding Ta 2 O 5 instead of ZnO or NiO in the TiO 2 -ZrO 2 -SnO 2 -ZnO-NiO-based material has been developed. This method has been proposed in Japanese Patent Application Laid-open No. 58-51406 and Japanese Patent Application Laid-Open No. 58-217465, respectively. The dielectric ceramic composition in the former is TiO 2 22
-43% by weight, ZrO 2 38-58% by weight, SnO 2 9-26% by weight as main components, ZnO 7% by weight or less,
The latter contains 10% by weight of NiO instead of ZnO in the former.
The following were added. [Problems to be Solved by the Invention] In the material disclosed in the above publication, although the Q value is improved, it is still only about 8000 at 7 GHz. There is also room for further improvement in sinterability. Therefore, it is an object of the present invention to provide a dielectric ceramic composition for high frequency use that further improves the Q value and sinterability. [Means for solving the problems] The high frequency dielectric ceramic composition of the present invention is
TiO2 22-43 wt%, ZrO2 38-58 wt%, SnO2 9
~26% by weight as the main component, plus 7% by weight of ZnO
Hereinafter, 10% by weight or less of NiO and 7% by weight or less of Sb 2 O 5 are added. The reason for limiting the composition to the above composition range is as follows. That is, if TiO 2 is less than 22% by weight, the dielectric constant (ε) decreases, and if it exceeds 43% by weight, the temperature coefficient (TC) of the dielectric constant becomes too large on the + side. Also
ZrO 2 is less than 38% by weight or 58% by weight
If it exceeds , the temperature coefficient (TC) of the dielectric constant becomes too large on the + side. Furthermore, if SnO 2 is less than 9% by weight, the temperature coefficient of permittivity (TC) becomes too large on the + side and Q decreases, and when it exceeds 26% by weight, the temperature coefficient of permittivity (TC) becomes large on the - side. Pass. Next, among the additives, if ZnO exceeds 7% by weight, the dielectric constant and Q decrease, and if NiO exceeds 10% by weight,
Alternatively, if the Sb 2 O 5 content exceeds 7% by weight, the Q will decrease, and neither will be of practical use. [Examples] The present invention will be described in detail below with reference to Examples. High purity TiO 2 , ZrO 2 , SnO 2 as raw materials,
ZnO, NiO, and Sb 2 O 5 were weighed and wet-mixed for 16 hours to obtain porcelain having the composition ratio shown in Table 1. Next, the mixed raw material obtained by dehydration and drying is
It was molded into a disc with a diameter of 12 mm and a thickness of 6 mm under a pressure of 2500 Kg/cm 2 . Continue to mold the molded product in a natural atmosphere at 1350~
Porcelain samples were obtained by firing at a temperature of 1450°C for 4 hours. The electrical characteristics of each ceramic sample, including dielectric constant (ε), Q, and temperature coefficient of resonance frequency (TC) at 25° C. and 7 GHz, were measured, and the results are shown in Table 1. Items marked with * in Table 1 are outside the scope of this invention, and all others are within the scope of this invention.
【表】【table】
上述した実施例から明らかなようにこの発明に
おいては、添加物をZnO−NiO−Sb2O5の３成分
とすることにより、焼結性は安定し、かつ高Ｑの
ものが得られた。例えばＱ値は、7GHz、TC≒０
で8700と、従来にない大きな値が得られた。
つまりこの発明の材料においては、結晶粒子が
従来のものに比べて小さくかつ大きさが均一にな
つており、上記添加物系は結晶成長を均一に、か
つ結晶内の格子不整の生成を抑制する効果を持つ
ている。
またこの発明の材料では、低い周波数になるほ
どＱの改善効果が大きい。これは、低い周波数に
なるほどユニツトが大型になるが、上記添加物系
によつて焼結性が改善された大型ユニツトも均一
に焼結したためである。例えば、この発明の材料
のＱ値は、1GHzで38000、4GHzで16000、7GHzで
8700となつており、これは上述した従来のTiO2
−ZrO2−SnO2−ZnO−NiO系の材料のＱ値に比
べて、それぞれの周波数において52％増、33％増
及び24％増となつている。
それゆえこの発明によれば、例えば自動車電話
の基地局チヤンネルフイルタ用誘電体共振器等の
低周波数（例えば800MHz）で高パワーの分野へ
の用途が拡大する。また、4GHz、10GHzの衛星
放送用誘電体共振器等の高い周波数領域において
も、これまでの超高Ｑ材に比べればＱは小さいも
のの、誘電率（ε）が約38と大きいため、これま
で使用できなかつた分野への用途の拡大も期待で
きる。
As is clear from the above examples, in the present invention, by using the three components of ZnO-NiO-Sb 2 O 5 as additives, a product with stable sinterability and high Q was obtained. For example, the Q value is 7GHz, TC≒0
The result was 8700, an unprecedentedly large value. In other words, in the material of this invention, the crystal grains are smaller and more uniform in size than in conventional materials, and the additive system described above uniformly grows the crystals and suppresses the formation of lattice misalignment within the crystals. It has an effect. Furthermore, with the material of the present invention, the lower the frequency, the greater the effect of improving Q. This is because the lower the frequency, the larger the unit, but even the large unit whose sinterability was improved by the additive system was sintered uniformly. For example, the Q value of the material of this invention is 38,000 at 1 GHz, 16,000 at 4 GHz, and 16,000 at 7 GHz.
8700, which is higher than the conventional TiO 2 mentioned above.
Compared to the Q value of -ZrO 2 -SnO 2 -ZnO-NiO-based material, the Q values are increased by 52%, 33%, and 24% at each frequency. Therefore, according to the present invention, the application can be expanded to low frequency (for example, 800 MHz) and high power fields such as dielectric resonators for base station channel filters of automobile telephones. In addition, even in the high frequency range of dielectric resonators for satellite broadcasting at 4 GHz and 10 GHz, the Q is lower than that of conventional ultra-high Q materials, but the dielectric constant (ε) is as large as approximately 38, so It is also expected that the application will expand to areas where it could not be used.
図面は、この発明の実施例にかかる材料（試料
番号16）と、従来例のTiO2−ZrO2−SnO2−ZnO
−NiO系材料のＱと周波数の関係を示す図であ
る。
The drawings show the material according to the embodiment of the present invention (sample number 16) and the conventional example TiO 2 −ZrO 2 −SnO 2 −ZnO
- It is a diagram showing the relationship between Q and frequency of NiO-based materials.
Claims (1)
SnO29〜26重量％を主成分とし、これにZnOを７
重量％以下、NiOを10重量％以下、Sb2O5を７重
量％以下添加含有してなる高周波用誘電体磁器組
成物。1 TiO2 22-43% by weight, ZrO2 38-58% by weight,
The main component is 9-26% by weight of SnO2 , and 7% by weight of ZnO.
A high-frequency dielectric ceramic composition containing NiO in an amount of 10% by weight or less and Sb 2 O 5 in an amount of 7% by weight or less.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60167954A JPS6229010A (en) | 1985-07-29 | 1985-07-29 | Dielectric ceramic composition for high frequency |
| US06/861,239 US4665041A (en) | 1985-05-10 | 1986-05-08 | Dielectric ceramic composition for high frequencies |
| DE19863615785 DE3615785A1 (en) | 1985-05-10 | 1986-05-10 | DIELECTRIC CERAMIC COMPOSITION FOR HIGH FREQUENCIES |
| FR868606762A FR2581639B1 (en) | 1985-05-10 | 1986-05-12 | HIGH FREQUENCY DIELECTRIC CERAMIC COMPOSITION |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60167954A JPS6229010A (en) | 1985-07-29 | 1985-07-29 | Dielectric ceramic composition for high frequency |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6229010A JPS6229010A (en) | 1987-02-07 |
| JPH056764B2 true JPH056764B2 (en) | 1993-01-27 |
Family
ID=15859122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60167954A Granted JPS6229010A (en) | 1985-05-10 | 1985-07-29 | Dielectric ceramic composition for high frequency |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6229010A (en) |
-
1985
- 1985-07-29 JP JP60167954A patent/JPS6229010A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6229010A (en) | 1987-02-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |