JPH0568062B2 - - Google Patents
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- JPH0568062B2 JPH0568062B2 JP17844489A JP17844489A JPH0568062B2 JP H0568062 B2 JPH0568062 B2 JP H0568062B2 JP 17844489 A JP17844489 A JP 17844489A JP 17844489 A JP17844489 A JP 17844489A JP H0568062 B2 JPH0568062 B2 JP H0568062B2
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Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は短波長紫外光発生装置に係り、特に波
長が120nmから190nmまでの光エネルギーによ
るSiH4ガスを用いた高品質なα−Si:H薄膜の
生成や、光デバイスへの応用、超高真空容器内の
H2O分子の分解・離脱による超高真空技術、更
に物質とその相互作用による材料や、ライフサイ
エンス等の基盤技術の開発分野に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a short wavelength ultraviolet light generator, in particular, high-quality α-Si using SiH 4 gas using light energy with a wavelength of 120 nm to 190 nm: Generation of H thin films, application to optical devices, and applications in ultra-high vacuum containers.
This field concerns ultra-high vacuum technology based on the decomposition and separation of H 2 O molecules, materials based on substances and their interactions, and the development of fundamental technologies such as life science.
マイクロ波放電は放電の一形態として種々研究
されている。この放電は無電極放電で、エネルギ
ーが放電管の周囲から注入されるといつた有電極
放電には無い特性を持ち、次の点が特徴づけられ
る。
Microwave discharge has been variously studied as a form of electric discharge. This discharge is an electrodeless discharge and has characteristics not found in electroded discharges, such as energy being injected from the periphery of the discharge tube, and is characterized by the following points.
(1) 媒体自由度:電極との反応を考慮せずにプラ
ズマ生成媒体を自由に選択でき、プラズマの汚
染もない。(1) Media freedom: The plasma generation medium can be freely selected without considering the reaction with the electrode, and there is no plasma contamination.
(2) 長寿命:電極物質の飛散による放電管の劣化
がない。(2) Long life: There is no deterioration of the discharge tube due to scattering of electrode materials.
(3) 放電の拡り:放電が一部に集中せず拡り易
く、放電管壁付近での発光が強い。(3) Spreading of discharge: The discharge is not concentrated in one area and spreads easily, and the light emission is strong near the wall of the discharge tube.
(4) 構成が単純:放電管には電極がなく、しかも
電源に放電安定化の素子が不要。(4) Simple configuration: The discharge tube has no electrodes, and no discharge stabilization element is required in the power supply.
これらの特徴を生かしたマイクロ波放電による
真空紫外光源が各種提案されている。 Various vacuum ultraviolet light sources using microwave discharge that take advantage of these characteristics have been proposed.
例えば、特公昭55−35825号公報(米国特許
USP 390659号公報)等に開示されているよう
に、マイクロ波を一定の空間中に閉じ込め、高融
点ガラスである石英バルブ中に所望のガス、金属
を封じ込めて発光させる技術がある(第6図参
照)。 For example, Japanese Patent Publication No. 55-35825 (U.S. Patent
As disclosed in USP No. 390659), there is a technology that confines microwaves in a certain space and confines a desired gas or metal in a quartz bulb, which is high melting point glass, to emit light (see Figure 6). reference).
また、IEEE、1987 MATUNAMI、FUYUKI
の論文に発表されている真空紫外光源のように、
方型導波管41(第7図参照)中のH面に石英製
のガス放電管42を置き、その放電管42の軸方
向に希ガスGASを流しながら放電させ、放電管
42の一端にフツ化マグネシウム(MgF2)等の
短波長透過窓材45を設けて、波長が140nm前
後の光エネルギーを取り出す技術もある。 Also, IEEE, 1987 MATUNAMI, FUYUKI
Like the vacuum ultraviolet light source published in the paper,
A quartz gas discharge tube 42 is placed on the H side of the rectangular waveguide 41 (see FIG. 7), and a rare gas GAS is caused to flow in the axial direction of the discharge tube 42 to cause a discharge. There is also a technique for extracting light energy with a wavelength of around 140 nm by providing a short wavelength transmitting window material 45 such as magnesium fluoride (MgF 2 ).
更に、照明学会研究会LS−87−1のP11〜P17
に発表された「マイクロ波放電による真空紫外線
光源」のように、円筒空洞共振器52(第8図参
照)中に、円筒の無電極放電管54(例えば、外
径10mmのサフアイヤを用いる)を配置し、放射光
全体を取り出す技術もある。 Furthermore, P11 to P17 of Illuminating Society of Japan Study Group LS-87-1
As in the ``vacuum ultraviolet light source using microwave discharge'' announced in There is also a technology that allows the radiation to be placed in the same direction and extracts the entire emitted light.
ところで、特公昭55−35825号公報に開示され
たプラズマ発光光源装置は、発光管32として石
英材料を用いる為に、石英材料の短波長側透過限
界(合成石英で160nm程度)以下の波長の光は
取り出せないという課題があつた。
By the way, since the plasma light emitting light source device disclosed in Japanese Patent Publication No. 55-35825 uses a quartz material as the arc tube 32, light with a wavelength below the short wavelength transmission limit of the quartz material (approximately 160 nm for synthetic quartz) cannot be used. There was a problem that it was not possible to take out the
また、IEEE、1987 MATUNAMI、FUYUKI
の論文に発表された真空紫外光源ではマイクロ波
電力に応じてプラズマの領域が変化する。この為
に、プラズマ電力密度を上げることが難しく、か
つ、大面積化することが難しく、実用的には直径
30mm程度となつてしまう。また、プラズマ放電を
用いるために窓材の劣化が早くなつてしまうとい
う課題があつた。 Also, IEEE, 1987 MATUNAMI, FUYUKI
In the vacuum ultraviolet light source published in the paper, the plasma region changes depending on the microwave power. For this reason, it is difficult to increase the plasma power density, and it is also difficult to increase the area, and in practice it is difficult to increase the plasma power density.
It becomes about 30mm. Another problem was that the window material deteriorated quickly due to the use of plasma discharge.
更に、照明学会研究会LS−87−1のP11〜P17
に発表された「マイクロ波放電による真空紫外線
光源」は、真空中に配置することによつて、発光
による熱の冷却方法が無く、よつて自然冷却では
一定以上の入射パワーを投入する事には限界があ
り、マイクロ波電力で100Wが限界であつた。 Furthermore, P11 to P17 of Illuminating Society of Japan Study Group LS-87-1
The "vacuum ultraviolet light source using microwave discharge" announced in There was a limit, and the limit was 100W for microwave power.
以上から本発明の目的は、直径80mm以上の大面
積の光照射を可能とする窓材を有し、また、窓材
の劣化を防止し、放電ガスを常に一定の圧力と流
量で流すことによつて放電ガスの放電による温度
上昇を防止し、一定の放射強度および波長のスペ
クトル線を取り出し、かつ、大電力のマイクロ波
パワーの投入を可能とさせる短波長紫外光発生装
置を提供することである。 From the above, it is an object of the present invention to have a window material that enables light irradiation over a large area with a diameter of 80 mm or more, to prevent deterioration of the window material, and to allow discharge gas to always flow at a constant pressure and flow rate. Therefore, by providing a short-wavelength ultraviolet light generator that prevents temperature rise due to discharge of discharge gas, extracts spectral lines with a constant radiation intensity and wavelength, and makes it possible to input high-power microwave power. be.
前記課題を解決するために本発明の短波長紫外
光発生装置は、第1図を参照すると、導波管部1
と、この導波管部1側の大気とは分離密封され、
かつ高抵抗な真空層を有する高真空部2と、この
高真空部2内にあつて、前記導波管部1側よりマ
イクロ波8を放射するアンテナ部3と、前記高真
空部2と隣接し、マイクロ波8に対して発光する
放電ガスをガス放出ノズル4より封入してなるガ
ス放電空間部5と、このガス放電空間部5と前記
高真空部2との境界にあつて、マイクロ波8に対
しては透明で、かつ放電ガスに対しては不透過な
ガラス材によるガラス隔壁6と、このガラス隔壁
6と前記ガス放電空間部5を挾む反対側にあつ
て、短波長光9を放出する短波長光透過窓材7を
有してなり、前記ガラス隔壁6を透過したマイク
ロ波8が放電ガスとガス放電空間部5内のガラス
隔壁6側近傍において放電発光する位置に前記ガ
ス放出ノズル4を配設した。
In order to solve the above problems, the short wavelength ultraviolet light generator of the present invention has a waveguide section 1, as shown in FIG.
The waveguide section 1 is separated and sealed from the atmosphere on the side of the waveguide section 1.
and a high vacuum section 2 having a high-resistance vacuum layer; an antenna section 3 located within the high vacuum section 2 that radiates microwaves 8 from the waveguide section 1 side; and an antenna section 3 adjacent to the high vacuum section 2. There is a gas discharge space 5 in which a discharge gas that emits light in response to microwaves 8 is sealed from the gas discharge nozzle 4, and a boundary between this gas discharge space 5 and the high vacuum section 2, which emits light in response to microwaves. A glass partition wall 6 made of a glass material that is transparent to the light beams 8 and impermeable to the discharge gas, and a short wavelength light beam 9 on the opposite side between the glass partition wall 6 and the gas discharge space 5. It has a short wavelength light transmitting window material 7 that emits a short wavelength light, and the microwave 8 transmitted through the glass partition wall 6 is connected to the discharge gas at a position near the glass partition wall 6 side in the gas discharge space 5 where the microwave 8 discharges and emits light. A discharge nozzle 4 was provided.
このことにより、マイクロ波の分布による放電
発光9の不均一性が防止でき、被照射面に対する
照射光分布がより大きな面積において均一にな
る。また、適切な位置にガス放出ノズル4を設置
したから、放電は高真空部2側でなく、ガスを放
出させた空間部5側で、しかもガス放電エネルギ
ーに十分耐性のあるガラス隔壁6側に近い空間で
放電発光させることができ、放電による短波長透
過窓材7の劣化を防止することができる。 As a result, non-uniformity of the discharge light emission 9 due to the distribution of microwaves can be prevented, and the irradiation light distribution on the irradiated surface becomes uniform over a larger area. In addition, since the gas discharge nozzle 4 is installed at an appropriate position, the discharge is not performed on the high vacuum section 2 side, but on the space section 5 side where the gas is released, and moreover, on the glass partition wall 6 side, which is sufficiently resistant to gas discharge energy. It is possible to cause discharge light emission in a close space, and it is possible to prevent deterioration of the short wavelength transmission window material 7 due to discharge.
以下、図面に基づいて本発明の短波長紫外光発
生装置を説明する。
Hereinafter, the short wavelength ultraviolet light generating device of the present invention will be explained based on the drawings.
第2図は本発明の一実施例である短波長紫外光
発生装置の概略説明図である。 FIG. 2 is a schematic explanatory diagram of a short wavelength ultraviolet light generating device which is an embodiment of the present invention.
11はマイクロ波発生器(マグネトロン)、1
2はサーキーユレータ、13はパワーモニタ、1
4はスリースタブチユーナ、15は方型導波管か
ら円型導波管に変換する導波管交換器、16は
Xe,An,D2,He等の放電管部(ガス放電空間
部)用のガスを供給するガスボンベ、17a,1
7bは排気ポート、18はガス流量コントローラ
(MFC)である。 11 is a microwave generator (magnetron), 1
2 is a circulator, 13 is a power monitor, 1
4 is a three-stub tuner, 15 is a waveguide exchanger that converts a rectangular waveguide into a circular waveguide, and 16 is a waveguide exchanger.
Gas cylinder for supplying gas for the discharge tube section (gas discharge space section) such as Xe, An, D 2 , He, etc., 17a, 1
7b is an exhaust port, and 18 is a gas flow controller (MFC).
マグネトロン11において、例えば、2450MHz
のマイクロ波が発生され、方型導波管を通して導
波管交換器15に給電される。マグネトロン11
は全波整流電源により動作されるため、発生され
るマイクロ波は100Hzまたは120Hzの脈流状であ
る。 In magnetron 11, for example, 2450MHz
microwaves are generated and fed to the waveguide exchanger 15 through the rectangular waveguide. magnetron 11
Since it is operated by a full-wave rectified power supply, the microwaves generated are pulsating at 100Hz or 120Hz.
第3図はこの短波長紫外光発生装置の要部説明
図である。なお、第3図において高真空部2、マ
イクロ波放射アンテナ3、ガス放出ノズル4、ガ
ス放電空間部5、石英ガラス隔壁6、短波長光透
過窓材7、放射電磁界(マイクロ波)8、真空紫
外光9、セラミツクウインド10は第1図と同符
号を用いている。また、排気ポート17a,17
bは第2図と同符号を用いている。 FIG. 3 is an explanatory diagram of the main parts of this short wavelength ultraviolet light generator. In addition, in FIG. 3, a high vacuum section 2, a microwave radiation antenna 3, a gas discharge nozzle 4, a gas discharge space section 5, a quartz glass partition wall 6, a short wavelength light transmission window material 7, a radiation electromagnetic field (microwave) 8, The same symbols as in FIG. 1 are used for the vacuum ultraviolet light 9 and the ceramic window 10. In addition, exhaust ports 17a, 17
The same reference numerals as in FIG. 2 are used for b.
21a,21bは冷却水ポートであり、発光に
よる熱を冷却する。23は放電ガス供給口、24
はステンレス発光管ホルダである。 Cooling water ports 21a and 21b cool the heat generated by light emission. 23 is a discharge gas supply port, 24
is a stainless steel arc tube holder.
なお、マイクロ波放電を光源に応用する場合
は、放電から光を取り出す部分に短波長光透過窓
材7を使う必要がある。本実施例では、例えば、
フツ化マグネシウム(MgF2)窓材7を用いて無
電極放電管を形成している。このフツ化マグネシ
ウムを用いると、短波長光透過窓材7の光透過特
性は120nm付近まで透過できる。 Note that when microwave discharge is applied to a light source, it is necessary to use a short wavelength light transmitting window material 7 in the portion where light is extracted from the discharge. In this embodiment, for example,
An electrodeless discharge tube is formed using a magnesium fluoride (MgF 2 ) window material 7. When this magnesium fluoride is used, the light transmission characteristic of the short wavelength light transmission window material 7 can transmit up to around 120 nm.
高真空部2の高真空側は10-4Torr以上が望ま
しい。10-1〜10-2Torr台では残留大気による放
電が発生し、放電電磁界8が吸収され、有効な放
電電磁界8がガス放電空間部5側に供給されな
い。 The high vacuum side of the high vacuum section 2 is preferably 10 -4 Torr or higher. At the level of 10 -1 to 10 -2 Torr, discharge occurs due to the residual atmosphere, the discharge electromagnetic field 8 is absorbed, and no effective discharge electromagnetic field 8 is supplied to the gas discharge space 5 side.
石英ガラス隔壁6は本実施例では短波長光透過
窓材7と略一体となつて放電管部5を兼ねる。 In this embodiment, the quartz glass partition wall 6 is substantially integrated with the short wavelength light transmitting window material 7, and also serves as the discharge tube section 5.
ガス放出ノズル4は石英ガラスにて放電ガス供
給口23にさしこまれる。そして、さしこまれる
ことによつて、ステンレス発光管ホルダ24の金
属武運でのマイクロ波放電の発生を防止する。 The gas discharge nozzle 4 is inserted into the discharge gas supply port 23 using quartz glass. By inserting the stainless steel arc tube holder 24, microwave discharge is prevented from occurring in the metal part of the stainless steel arc tube holder 24.
また、ガス放出ノズル4より放出されたガスは
短波長光透過窓材7側に一旦吹きつけられて短波
長光透過窓材7を冷却した後に、排気ポート17
bより排気される。このガスの循環により、放電
はガスを放出させた空間部5側で、しかもガス放
電エネルギーに十分耐性のあるガラス隔壁6側に
近い空間で放電発光されることができ、放電によ
る短波長光透過窓材7の劣化を防止することがで
きる。 Further, the gas discharged from the gas discharge nozzle 4 is once blown to the side of the short wavelength light transmitting window material 7 to cool the short wavelength light transmitting window material 7, and then the gas is discharged from the exhaust port 17.
It is exhausted from b. Due to this gas circulation, the discharge can be emitted on the side of the space 5 where the gas is released, and also in the space close to the glass partition wall 6, which is sufficiently resistant to gas discharge energy, and short wavelength light can be transmitted by the discharge. Deterioration of the window material 7 can be prevented.
次に、本実施例にて用いたキセノン(Xe)ガ
スによる真空紫外発光特性について説明する。 Next, the vacuum ultraviolet emission characteristics of the xenon (Xe) gas used in this example will be explained.
キセノンガスは共鳴線が147nmであり、真空
紫外の光源によく使用される。本実施例の放電管
部5を用いた場合における147nm線のスペクト
ルを説明する。第4図は放電ガスとしてキセノン
(99.995%)を放電圧力0.1Torrから10Torrまで
変化させた時の147nm共鳴線のプロフアイルを
示すものである。なお、ガス流量は20c.c./min、
Pi=0.5Kw、Pr=0.05Kwにて放電実験を行つた。 Xenon gas has a resonance line of 147 nm and is often used as a vacuum ultraviolet light source. The spectrum of the 147 nm line when the discharge tube section 5 of this example is used will be explained. FIG. 4 shows the profile of the 147 nm resonance line when xenon (99.995%) is used as the discharge gas and the discharge pressure is varied from 0.1 Torr to 10 Torr. The gas flow rate is 20c.c./min.
Discharge experiments were conducted at Pi=0.5Kw and Pr=0.05Kw.
また、測定用分光器としてはACTON VM−
502にACTON DA−780−VUVを用いた。更に、
この時のスリツト幅は0.25mm、スリツト長は4
mm、測定距離は69cmである。 In addition, ACTON VM− is used as a measurement spectrometer.
ACTON DA-780-VUV was used for 502. Furthermore,
At this time, the slit width is 0.25mm, and the slit length is 4
mm, the measurement distance is 69cm.
第4図に示すように、圧力が高いほどスペクト
ルのピークが低い。10Torrで反転吸収が起こつ
ているところからこの原因は、自己吸収による影
響が大きいものと考えられる。 As shown in FIG. 4, the higher the pressure, the lower the peak of the spectrum. Since inversion absorption occurs at 10 Torr, it is thought that this is largely due to the influence of self-absorption.
第5図はキセノンガス0.85Torrの時の照度分
布図である。なお、この発光の照度分布を測定す
る為に、キセノンガスが0.85Torrの時の250nm
前後の発光強度を、出願人製作の紫外線照度計
UV−M02を用いた。この照度分布により直径80
mmにおける強度比として
Imin/Imax=9/12=0.75
を得ることができた。 Figure 5 is an illuminance distribution diagram when xenon gas is 0.85 Torr. In addition, in order to measure the illuminance distribution of this emission, we used 250nm when the xenon gas was 0.85Torr.
The luminescence intensity before and after was measured using an ultraviolet light meter manufactured by the applicant.
UV-M02 was used. Due to this illuminance distribution, the diameter is 80 mm.
As the intensity ratio in mm, Imin/Imax=9/12=0.75 could be obtained.
これにより、本発明の短波長紫外光発生装置を
用いれば、実用上十分な強度比が得られる。 As a result, if the short wavelength ultraviolet light generator of the present invention is used, a practically sufficient intensity ratio can be obtained.
以上本発明によれば、電磁波を放射するアンテ
ナ部を導波管部の大気部とは分離密封された型
で、直径80mm以上の大面積の光照射を可能とする
窓材を有し、また、窓材の劣化を防止し、放電ガ
スを常に一定の圧力と流量で流すように構成した
から、放電ガスの放電による温度上昇を防止し、
一定の所望のスペクトル線を取り出すことができ
る。即ち、ガスの種類や圧力を変えることによ
り、発光波長を選択することができる。また、大
電力のマイクロ波パワーの投入が可能となる。
As described above, according to the present invention, the antenna part that radiates electromagnetic waves is sealed and separated from the atmospheric part of the waveguide part, and has a window material that enables light irradiation over a large area with a diameter of 80 mm or more, and This structure prevents the window material from deteriorating and allows the discharge gas to always flow at a constant pressure and flow rate, thereby preventing temperature rise due to discharge of the discharge gas.
Certain desired spectral lines can be extracted. That is, the emission wavelength can be selected by changing the type and pressure of the gas. Further, it becomes possible to input high-power microwave power.
第1図は本発明の短波長紫外光発生装置の概略
説明図、第2図は本発明の一実施例である短波長
紫外光発生装置の全体図、第3図はこの短波長紫
外光発生装置の要部説明図、第4図はキセノンガ
スの147nm共鳴線のプロフアイル、第5図はキ
セノンガスが0.85Torrの時の照度分布図、第6
図乃至第8図は従来の短波長紫外光発生装置の概
略説明図である。
1……導波管、2……高真空部、3……アンテ
ナ部、4……ガス放出ノズル、5……ガス放電空
間部、6……ガラス隔壁、7……短波長光透過窓
材、8……マイクロ波、9……放電発光、11…
…マグネトロン、12……サーキユレーサー、1
4……スリースタブチユーナ、19……真空チヤ
ンバ。
Fig. 1 is a schematic explanatory diagram of a short wavelength ultraviolet light generating device of the present invention, Fig. 2 is an overall view of a short wavelength ultraviolet light generating device which is an embodiment of the present invention, and Fig. 3 is a schematic diagram of the short wavelength ultraviolet light generating device of the present invention. An explanatory diagram of the main parts of the device, Fig. 4 is a profile of the 147 nm resonance line of xenon gas, Fig. 5 is an illuminance distribution diagram when xenon gas is 0.85 Torr, Fig. 6
8 are schematic illustrations of a conventional short wavelength ultraviolet light generator. DESCRIPTION OF SYMBOLS 1... Waveguide, 2... High vacuum part, 3... Antenna part, 4... Gas discharge nozzle, 5... Gas discharge space part, 6... Glass partition, 7... Short wavelength light transmission window material , 8...Microwave, 9...Discharge light emission, 11...
...Magnetron, 12...Circle Racer, 1
4...Three stable chamber, 19...Vacuum chamber.
Claims (1)
密封され、かつ高抵抗な真空層を有する高真空部
と、この高真空部内にあつて、前記導波管部側よ
りマイクロ波を放射するアンテナ部と、前記高真
空部と隣接し、マイクロ波に対して発光する放電
ガスをガス放出ノズルより封入してなるガス放電
空間部と、このガス放電空間部と前記高真空部と
の境界にあつて、マイクロ波に対しては透明で、
かつ放電ガスに対しては不透過なガラス材による
ガラス隔壁と、このガラス隔壁と前記ガス放電空
間部を挾む反対側にあつて、短波長光を放出する
短波長光透過窓材を有してなり、 前記ガラス隔壁を透過したマイクロ波が前記放
電ガスとガス放電空間部内のガラス隔壁側近傍に
おいて放電発光する位置に前記ガス放出ノズルを
配設したことを特徴とする短波長紫外光発生装
置。[Scope of Claims] 1. A waveguide portion and the atmosphere on the side of the waveguide portion are separated and sealed, and a high vacuum portion having a high-resistance vacuum layer; an antenna section that radiates microwaves from the wave tube section side; a gas discharge space section that is adjacent to the high vacuum section and is formed by sealing a discharge gas that emits light in response to the microwaves through a gas discharge nozzle; and this gas discharge space. transparent to microwaves, at the boundary between the part and the high vacuum part,
and a glass partition wall made of a glass material that is impermeable to the discharge gas, and a short-wavelength light-transmissive window material that emits short-wavelength light on the opposite side sandwiching the glass partition wall and the gas discharge space. The short-wavelength ultraviolet light generating device is characterized in that the gas discharge nozzle is disposed at a position where the microwave transmitted through the glass partition causes discharge light emission between the discharge gas and the vicinity of the glass partition in the gas discharge space. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17844489A JPH0343951A (en) | 1989-07-11 | 1989-07-11 | Short wavelength light and ultraviolet ray generating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17844489A JPH0343951A (en) | 1989-07-11 | 1989-07-11 | Short wavelength light and ultraviolet ray generating apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0343951A JPH0343951A (en) | 1991-02-25 |
| JPH0568062B2 true JPH0568062B2 (en) | 1993-09-28 |
Family
ID=16048631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17844489A Granted JPH0343951A (en) | 1989-07-11 | 1989-07-11 | Short wavelength light and ultraviolet ray generating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0343951A (en) |
-
1989
- 1989-07-11 JP JP17844489A patent/JPH0343951A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0343951A (en) | 1991-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |