JPH0568658B2 - - Google Patents
Info
- Publication number
- JPH0568658B2 JPH0568658B2 JP59011476A JP1147684A JPH0568658B2 JP H0568658 B2 JPH0568658 B2 JP H0568658B2 JP 59011476 A JP59011476 A JP 59011476A JP 1147684 A JP1147684 A JP 1147684A JP H0568658 B2 JPH0568658 B2 JP H0568658B2
- Authority
- JP
- Japan
- Prior art keywords
- collector electrode
- collector
- output transistor
- current
- emitter region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Landscapes
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明は出力トランジスタの電流検出方法に係
り、特にトランジスタのコレクタ抵抗に生じる電
圧降下を利用した出力トランジスタの電流検出方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a method for detecting a current in an output transistor, and more particularly to a method for detecting a current in an output transistor using a voltage drop occurring in the collector resistance of the transistor.
(ロ) 従来技術
出力用トランジスタの過電流防止手段として、
トランジスタの前段に電流検知機能を設けること
が多い。(b) Prior art As an overcurrent prevention means for output transistors,
A current detection function is often provided before the transistor.
かかる電流検知機能として、従来は例えば、出
力トランジスタのベース・エミツタ間電圧Vfを
抵抗分割し、その分割電圧でもつて検知用トラン
ジスタの導通を制御する手段がある。 Conventionally, as such a current detection function, for example, there is a means of dividing the base-emitter voltage Vf of the output transistor by resistors and controlling the conduction of the detection transistor using the divided voltage.
第１図はかかる手段のひとつを示すための説明
図である。 FIG. 1 is an explanatory diagram showing one such means.
１は出力トランジスタ、２，３は出力トランジ
スタ１のベースに接続した分割抵抗、４は分割抵
抗における電圧降下に基づいて出力トランジスタ
の過電流を検知する検知用トランジスタである。 1 is an output transistor, 2 and 3 are dividing resistors connected to the base of the output transistor 1, and 4 is a detection transistor that detects an overcurrent in the output transistor based on a voltage drop across the dividing resistor.
しかしながら、前記方法ではVfはトランジス
タの形状によつて各々異なる。特にIC化する場
合、その形状に応じて出力トランジスタと検知用
トランジスタとのマツチングをとらなければなら
ないため、前記分割抵抗の値等を種々変更し、当
該抵抗値を得る必要があつた。 However, in the above method, Vf differs depending on the shape of the transistor. Particularly when converting into an IC, it is necessary to match the output transistor and the detection transistor depending on the shape of the IC, so it is necessary to variously change the values of the dividing resistors and the like to obtain the corresponding resistance values.
また、出力トランジスタのコレクタ端子または
エミツタ端子に直列に検出抵抗を挿入し、検出抵
抗に生ずる電圧降下にて出力トランジスタに流れ
る電流を検出する方法もある。この方法の場合、
電流検出の精度は前述の方法に比べて高いが、出
力トランジスタと直列に検出抵抗が挿入されるた
め、検出抵抗での電圧降下が電力損失となり、特
に出力トランジスタの飽和電圧の低いものが要求
される場合極めて不具合であつた。 Another method is to insert a detection resistor in series with the collector terminal or emitter terminal of the output transistor, and detect the current flowing through the output transistor based on the voltage drop that occurs across the detection resistor. In this method,
The accuracy of current detection is higher than that of the above-mentioned method, but since a detection resistor is inserted in series with the output transistor, the voltage drop across the detection resistor causes power loss, and in particular, a low saturation voltage of the output transistor is required. It was extremely inconvenient.
(ハ) 目的
本発明は上記した背景の下で創作されたもので
あり、検知用トランジスタや検出抵抗を必要とす
ることなく電流を検出することができる出力トラ
ンジスタの電流検出方法を提供することを目的と
している。(c) Purpose The present invention was created against the above-mentioned background, and it is an object of the present invention to provide a current detection method for an output transistor that can detect current without requiring a detection transistor or a detection resistor. The purpose is
(ニ) 構成
本発明に係る出力トランジスタの電流検出方法
は、プレーナ構造の出力トランジスタにおいて、
ベース・エミツタ領域を取り囲むように第１のコ
レクタ電極を形成し、前記第１のコレクタ電極と
は別に、前記第１のコレクタ電極と前記ベース・
エミツタ領域との間を流れるコレクタ電極を検出
するための第２のコレクタ電極を前記ベース・エ
ミツタ領域を介して前記第１のコレクタ電極と対
向する位置に微小領域をもつて形成し、前記第１
のコレクタ電極と前記ベース・エミツタ領域との
間に生ずるコレクタ抵抗に基づく電圧降下を前記
第１のコレクタ電極と第２のコレクタ電極との電
位差によつて検出し、当該結果により前記コレク
タ電流検出するようにしたことを特徴とする。(d) Configuration The method for detecting current of an output transistor according to the present invention includes:
A first collector electrode is formed so as to surround the base emitter region, and separate from the first collector electrode, the first collector electrode and the base emitter region are separated from each other.
A second collector electrode for detecting the collector electrode flowing between the emitter region and the base emitter region is formed with a minute region at a position facing the first collector electrode via the base emitter region, and
A voltage drop based on collector resistance occurring between the collector electrode and the base emitter region is detected by a potential difference between the first collector electrode and the second collector electrode, and the collector current is detected based on the result. It is characterized by the following.
(ホ) 実施例
第２図は本発明に係るバイポーラ出力トランジ
スタ１００の概略断面図である。(E) Embodiment FIG. 2 is a schematic cross-sectional view of a bipolar output transistor 100 according to the present invention.
図において、１０はＰ型サブストレート、２０
はN+型の埋込層である。３０はＮ型エピタキシ
ヤル層からなるコレクタ領域、４０はN+層から
なるエミツタ拡散、５０は前記エミツタを囲むＰ
型ベース拡散である。 In the figure, 10 is a P-type substrate, 20
is an N + type buried layer. 30 is a collector region made of an N-type epitaxial layer, 40 is an emitter diffusion made of an N + layer, and 50 is a P region surrounding the emitter.
It is type-based diffusion.
６０と７０はそれぞれ前記エミツタ、ベースの
両側を挟むように位置せしめたコレクタ３０のコ
ンタクト部であり、ここでコレクタ電極９０をコ
レクタ電流引き出し用、コレクタ電極９３を電流
検出用とする。図２の概略断面図では同一形状と
しているが実際は電流引き出し用電極９３は前記
ベースエミツタ領域を取り囲むように配し、検出
用コレクタ電極９３は引き出し用電極９０と対向
する位置に微少領域をもつて形成される。 Reference numerals 60 and 70 are contact portions of the collector 30, which are positioned to sandwich both sides of the emitter and base, respectively, where the collector electrode 90 is used for extracting collector current, and the collector electrode 93 is used for detecting current. Although they have the same shape in the schematic cross-sectional view of FIG. 2, in reality, the current extraction electrode 93 is arranged so as to surround the base emitter region, and the detection collector electrode 93 is formed with a minute area at a position facing the extraction electrode 90. be done.
なお、８０は半導体表面保護用のシリコン酸化
膜である。９１および９２はそれぞれベース・エ
ミツタ電極をしめす。 Note that 80 is a silicon oxide film for protecting the semiconductor surface. Reference numerals 91 and 92 indicate base and emitter electrodes, respectively.
第３図は出力トランジスタの電流検出をする場
合のブロツクダイヤグラムである。 FIG. 3 is a block diagram for detecting the current of the output transistor.
上記構成において、電極９０と９３間の電圧降
下ΔVは次式で表される。 In the above configuration, the voltage drop ΔV between the electrodes 90 and 93 is expressed by the following equation.
ΔV＝Ｉ（Repi＋Ｒ Ｂ／Ｌ）
ここで、Ｉは出力トランジスタのコレクタ電
流、Repi＋Ｒ Ｂ／Ｌは電極９０とＢ／Ｌ埋込
層間の抵抗と、電極９２直下までのＢ／Ｌ埋込層
の抵抗との和すなわちコレクタ抵抗である。 ΔV=I(Repi+R B/L) Here, I is the collector current of the output transistor, and Repi+R B/L is the resistance between the electrode 90 and the B/L buried layer, and the resistance of the B/L buried layer up to just below the electrode 92. It is the sum of the resistance and the collector resistance.
(ホ) 効果
以上、本発明に係る出力トランジスタの電流検
出方法による場合には、第２のコレクタ電極を新
たに設けた上で、出力トランジスタ自体が有する
コレクタ抵抗を積極的に利用してコレクタ電流を
検出するようにしているので、従来とは異なり、
検知用トランジスタや検出抵抗を必要とせず電流
を検出することができる。検知用トランジスタを
用いないことから、検知用トランジスタ等とのマ
ツチングをとる等の面倒な調整を行う必要がな
く、検出抵抗を用いないことから、これによる電
力損失や飽和電圧の問題も生じない。(E) Effect As described above, in the case of the output transistor current detection method according to the present invention, the second collector electrode is newly provided and the collector resistance of the output transistor itself is actively used to detect the collector current. Since we are trying to detect
Current can be detected without requiring a detection transistor or detection resistor. Since a detection transistor is not used, there is no need to perform troublesome adjustments such as matching with a detection transistor, etc., and since a detection resistor is not used, problems with power loss and saturation voltage do not occur.
しかもコレクタ抵抗はIC製造の段階で十分に
管理されていることから、電流検出の精度を高め
ることができるというメリツトもある。 Moreover, since the collector resistance is well controlled during the IC manufacturing stage, it also has the advantage of increasing the accuracy of current detection.
さらに、第１のコレクタ電極をベース・エミツ
タ領域を取り囲むように形成するとともに、第２
のコレクタ電極をベース・エミツタ領域を介して
第１のコレクタ電極と対向する位置に微小領域を
もつて形成したので、第１のコレクタ電極からベ
ース・エミツタ領域に流れる当該出力トランジス
タのコレクタ電流には第２のコレクタ電極はほと
んど関与せず、第１のコレクタ電極と第２のコレ
クタ電極との電位差を検出すれば、当該コレクタ
電極を正確に測定できる。 Further, a first collector electrode is formed to surround the base emitter region, and a second collector electrode is formed to surround the base emitter region.
Since the collector electrode is formed with a minute region at a position facing the first collector electrode via the base-emitter region, the collector current of the output transistor flowing from the first collector electrode to the base-emitter region is The second collector electrode is hardly involved, and by detecting the potential difference between the first collector electrode and the second collector electrode, the collector electrode can be accurately measured.
従つて、コレクタ電流検出のために、当該出力
トランジスタ本来の動下能力を低下させることな
く、また本来の動作電圧範囲を狭くすることな
く、正確なコレクタ電流の測定が可能となる。 Therefore, in order to detect the collector current, it is possible to accurately measure the collector current without reducing the inherent dynamic capability of the output transistor or narrowing the original operating voltage range.
第１図は従来方法のひとつを示すための説明
図、第２図は本発明のバイポーラ出力トランジス
タの概略断面図、第３図は出力トランジスタの電
流検出をする場合のブロツクダイヤグラムであ
る。
１０……Ｐ型サブストレート、２０……Ｎ型+
のＢ／Ｌ埋込層、３０……Ｎ層からなるコレク
タ、４０……エミツタ、５０……ベース、９０，
９３……電極、１００……出力トランジスタ、２
００……コンパレータ。
FIG. 1 is an explanatory diagram showing one of the conventional methods, FIG. 2 is a schematic cross-sectional view of the bipolar output transistor of the present invention, and FIG. 3 is a block diagram for detecting the current of the output transistor. 10...P type substrate, 20...N type +
B/L buried layer, 30... collector consisting of N layers, 40... emitter, 50... base, 90,
93... Electrode, 100... Output transistor, 2
00...Comparator.
Claims (1)
ベース・エミツタ領域を取り囲むように第１のコ
レクタ電極を形成し、前記第１のコレクタ電極と
は別に、前記第１のコレクタ電極と前記ベース・
エミツタ領域との間を流れるコレクタ電極を検出
するための第２のコレクタ電極を前記ベース・エ
ミツタ領域を介して前記第１のコレクタ電極と対
向する位置に微小領域をもつて形成し、前記第１
のコレクタ電極と前記ベース・エミツタ領域との
間に生ずるコレクタ抵抗に基づく電圧降下を前記
第１のコレクタ電極と第２のコレクタ電極との電
位差によつて検出し、当該結果により前記コレク
タ電流検出するようにしたことを特徴とする出力
トランジスタの電流検出方法。1 In an output transistor with a planar structure,
A first collector electrode is formed so as to surround the base emitter region, and separate from the first collector electrode, the first collector electrode and the base emitter region are separated from each other.
A second collector electrode for detecting the collector electrode flowing between the emitter region and the base emitter region is formed with a minute region at a position facing the first collector electrode via the base emitter region, and
A voltage drop based on collector resistance occurring between the collector electrode and the base emitter region is detected by a potential difference between the first collector electrode and the second collector electrode, and the collector current is detected based on the result. A method for detecting current of an output transistor, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59011476A JPS61221665A (en) | 1984-01-24 | 1984-01-24 | Detecting method for current of output transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59011476A JPS61221665A (en) | 1984-01-24 | 1984-01-24 | Detecting method for current of output transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61221665A JPS61221665A (en) | 1986-10-02 |
| JPH0568658B2 true JPH0568658B2 (en) | 1993-09-29 |
Family
ID=11779116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59011476A Granted JPS61221665A (en) | 1984-01-24 | 1984-01-24 | Detecting method for current of output transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61221665A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5892744U (en) * | 1981-12-14 | 1983-06-23 | 株式会社東芝 | semiconductor element |
-
1984
- 1984-01-24 JP JP59011476A patent/JPS61221665A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61221665A (en) | 1986-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |