JPH0569666B2 - - Google Patents
Info
- Publication number
- JPH0569666B2 JPH0569666B2 JP56115089A JP11508981A JPH0569666B2 JP H0569666 B2 JPH0569666 B2 JP H0569666B2 JP 56115089 A JP56115089 A JP 56115089A JP 11508981 A JP11508981 A JP 11508981A JP H0569666 B2 JPH0569666 B2 JP H0569666B2
- Authority
- JP
- Japan
- Prior art keywords
- pad
- holder
- polishing
- polished
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
【発明の詳細な説明】 本発明はラツピング装置に関する。[Detailed description of the invention] The present invention relates to a wrapping device.
半導体ウエハのラツピング装置としては、特公
昭48−14146号等にも示されているが、第1図に
示す構造になつている。 A wrapping device for semiconductor wafers is also disclosed in Japanese Patent Publication No. 14146/1983, and has the structure shown in FIG.
この構造においては、回転する回転研磨盤1の
上面にバフ(研磨布、したがつて吸水性である。)
2が貼り付けられている。被ラツピング物である
ウエハ3は、円板状保持体4の下面に複数保持さ
れる。 In this structure, a buff (abrasive cloth, therefore water-absorbing) is placed on the top surface of the rotating rotary polishing disk 1.
2 is attached. A plurality of wafers 3, which are objects to be wrapped, are held on the lower surface of a disc-shaped holder 4.
この保持体4は支軸5の下端に固定される。支
軸5は、軸受6を介して支持体7に取り付けられ
る。支持体7にはウエイト8によつて荷重Wが、
加えられる。この結果ウエハ3の下面(主面)は
回転研磨盤1に押し付けられることからラツピン
グ(研磨)される。なお、ウエハ3はリング状の
リテーナ10によつて周囲を規制されるととも
に、保持体4にはパツド9を介して接する。ま
た、パツド9の背面の保持体部分には真空孔11
が穿たれ、ウエハ3は真空によつても保持される
ようになつている。 This holder 4 is fixed to the lower end of the support shaft 5. The support shaft 5 is attached to a support body 7 via a bearing 6. A load W is applied to the support body 7 by the weight 8.
Added. As a result, the lower surface (principal surface) of the wafer 3 is pressed against the rotary polishing disk 1 and is lapped (polished). The wafer 3 is circumferentially regulated by a ring-shaped retainer 10 and is in contact with the holder 4 via a pad 9. In addition, a vacuum hole 11 is provided in the holder part on the back side of the pad 9.
is perforated, and the wafer 3 is also held by vacuum.
ところで、近年ウエハは大口径化とともに加工
精度(平行度など)要求が非常にきびしくなつて
おり、前記従来の装置では対応できなくなつて来
た。この従来の装置においては、ウエハ3の周辺
部分のダレが大きい。またウエハの厚さバラツキ
(T.T.V)が大きい等の問題がある。 Incidentally, in recent years, as wafers have become larger in diameter, requirements for processing accuracy (parallelism, etc.) have become very strict, and it has become impossible for the above-mentioned conventional apparatuses to meet these requirements. In this conventional apparatus, the sag in the peripheral portion of the wafer 3 is large. There are also problems such as large wafer thickness variations (TTV).
これらの問題の原因はおもに、(1)研磨機構から
来る荷重の不均一と、(2)ウエハ保持用パツド9内
の含水状態のバラツキによつて生じると考えられ
るウエハに加わる荷重のウエハ内各点における不
均一とによつて起ると考えられる。 The main causes of these problems are (1) non-uniformity of the load coming from the polishing mechanism, and (2) variation in the moisture content within the wafer holding pad 9, which is thought to be the cause of the load applied to the wafer. This is thought to be caused by non-uniformity at the points.
前者は最近本出願人が既に特許出願した方法に
より、解決済みであるが、後者は未だ良策は提案
されていない。すなわち、ウエハ内各点における
荷重変動は、パツド材質が吸水性のため、含水状
態が変動することによつて生じる。詳述するなら
ば、保持体4へウエハ3を保持させる際に均一的
になつていると考えられるパツド9の含水量はウ
エハ3の真空吸着動作によつて真空孔11付近で
は極端に少なくなるとともに、研磨中にはパツド
9とウエハ3の界面間及びパツド内部に多量の水
(含研磨剤)を含むことによつて不均一になるこ
とが第2図で示すように実験で明らかとなつた。 The former problem has been solved by a method for which the present applicant has recently applied for a patent, but no good solution to the latter problem has been proposed yet. In other words, the load variation at each point within the wafer is caused by variation in the moisture content of the pad material, which has water absorption properties. To be more specific, the moisture content of the pad 9, which is considered to be uniform when the wafer 3 is held by the holder 4, becomes extremely low near the vacuum hole 11 due to the vacuum suction operation of the wafer 3. At the same time, experiments have shown that during polishing, a large amount of water (containing abrasive) is contained between the interface between pad 9 and wafer 3 and inside the pad, resulting in non-uniformity, as shown in Figure 2. Ta.
本発明は上記問題を解決するためになされたも
のであつて、その目的は保持体からウエハに与え
る荷重の分布をウエハ内全面で均一化させること
により、荷重のバラツキによる研磨しろのバラツ
キを低減し、平行度がよく、ダレのないウエハを
提供できるラツピング装置を提供することにあ
る。 The present invention has been made to solve the above problem, and its purpose is to uniformize the distribution of the load applied from the holder to the wafer over the entire surface of the wafer, thereby reducing variations in the polishing margin due to variations in the load. However, it is an object of the present invention to provide a wrapping device that can provide wafers with good parallelism and no sag.
このような目的を達成するために、本発明のラ
ツピング装置は、研磨盤面に対面する保持体に吸
水性のパツドを介して被研磨物を保持させ、保持
体を貫通するようにしてパツドに開設された真空
孔による吸着作用によつて被研磨物をパツドの保
持面に吸着させ、保持体に設けられたリング状の
リテーナによつて被研磨物の周囲を規制し、保持
体に荷重を加えることによつて被研磨物の研磨面
を研磨盤面に押しつけつつ研磨するラツピング装
置であつて、前記真空孔が、パツドにおける保持
面の周縁近傍およびその内側に、それぞれ円周方
向に開設されているものである。 In order to achieve such an object, the wrapping device of the present invention has a holder facing the polishing disk surface hold the object to be polished through a water-absorbing pad, and a wrapping device is provided on the pad so as to penetrate through the holder. The object to be polished is attracted to the holding surface of the pad by the suction effect of the vacuum holes, and the ring-shaped retainer provided on the holder restricts the circumference of the object to be polished, and a load is applied to the holder. A lapping device for polishing a polished surface of an object to be polished while pressing it against a polishing disk surface, wherein the vacuum holes are opened in the circumferential direction near the periphery of the holding surface of the pad and inside the periphery. It is something.
以下、実施例により本発明を説明する。 The present invention will be explained below with reference to Examples.
第3図は本発明の一実施例によるラツピング装
置の概略を示す断面図である。同図において、1
は上面を研磨面とする回転研磨盤、2は研磨盤上
面に接着されたバフ(研磨布)、3は研磨される
半導体ウエハ、4は半導体ウエハをその片面(下
面の保持面)で保持する円板状保持体、5は保持
体を支える支軸、6は支持体7に支軸5を回動可
能に取り付ける軸受、7は支持体、8は支持体7
に荷重Wを加えるウエイト、9は保持体4とウエ
ハ3とを密着保持するパツド、10はウエハの位
置決め及びウエハのとび出しを防止するリテー
ナ、11はパツド9の密着力を補完する真空孔で
ある。保持体4を貫通するようにしてパツド9に
開設された真空孔11、パツド9の半導体ウエハ
保持面の周縁近傍、およびその内側(すなわち、
従来と同様に、半導体ウエハ保持面の中心と周縁
との中間より僅かに周縁側に寄つた位置)の、そ
れぞれ円周方向に2列、複数個開設されており、
この真空孔11は前記のようにパツド9の密着力
を補完するものであるが、その吸着作用によつ
て、研磨中に浸入してくる研磨液を吸い込むよう
になつている。 FIG. 3 is a sectional view schematically showing a wrapping device according to an embodiment of the present invention. In the same figure, 1
2 is a buff (polishing cloth) glued to the top surface of the polishing disk; 3 is a semiconductor wafer to be polished; 4 is a rotating polishing disk whose top surface is the polishing surface; A disc-shaped holder, 5 a support shaft for supporting the holder, 6 a bearing for rotatably attaching the support shaft 5 to a support 7, 7 a support, and 8 a support 7
9 is a pad that holds the holder 4 and the wafer 3 in close contact with each other; 10 is a retainer that positions the wafer and prevents the wafer from coming out; 11 is a vacuum hole that complements the adhesion of the pad 9; be. Vacuum holes 11 are formed in the pad 9 so as to penetrate the holder 4, near the periphery of the semiconductor wafer holding surface of the pad 9, and inside thereof (i.e.
As in the past, two or more rows are provided in the circumferential direction at positions slightly closer to the periphery than between the center and the periphery of the semiconductor wafer holding surface.
This vacuum hole 11 supplements the adhesion of the pad 9 as described above, and its adsorption action allows it to suck in the polishing liquid that enters during polishing.
このように、本実施例のラツピング装置によれ
ば、真空孔11がパツド9の半導体ウエハ保持面
の周縁近傍およびその内側に、それぞれ円周方向
に2列、複数個開設されているので、研磨中にパ
ツド9の外周側から浸入してくる研磨液のほとん
どが、この半導体ウエハ保持面の周縁近傍に開設
された真空孔11に吸い込まれ、ここで吸い込ま
れなかつたものが内側に開設された真空孔11に
吸い込まれることになる。 As described above, according to the wrapping apparatus of this embodiment, a plurality of vacuum holes 11 are provided in two rows in the circumferential direction in the vicinity of the periphery of the semiconductor wafer holding surface of the pad 9 and inside the periphery, so that the wrapping device can be easily polished. Most of the polishing liquid that enters from the outer circumferential side of the pad 9 is sucked into the vacuum hole 11 opened near the periphery of the semiconductor wafer holding surface, and what is not sucked in is opened inside. It will be sucked into the vacuum hole 11.
ということは、パツド9の周縁近傍に開設され
た真空孔11は、パツド9の内部へ浸入してくる
研磨液に対して、あたかも防波堤のような役割を
果たすことになる。 In other words, the vacuum hole 11 formed near the periphery of the pad 9 acts like a breakwater against the polishing liquid that enters the inside of the pad 9.
したがつて、このようなラツピング装置によつ
て研磨を行えば、パツド9内の含水量は僅かとな
り、よつて半導体ウエハに与える圧力は均一化さ
れる。その結果、研磨によるウエハの厚さバラツ
キが小さく、かつウエハ周縁のだれの発生も少な
くなり、高品質のラツピングが可能となる。 Therefore, if polishing is performed using such a wrapping device, the water content in the pad 9 will be small, and the pressure applied to the semiconductor wafer will be uniform. As a result, variations in the thickness of the wafer due to polishing are small, and the occurrence of sagging at the periphery of the wafer is also reduced, making it possible to perform high-quality wrapping.
なお、本発明は、前記実施例に限定されない。
すなわち、真空孔は、多孔質材を用いて形成させ
てもよい。 Note that the present invention is not limited to the above embodiments.
That is, the vacuum holes may be formed using a porous material.
また本発明は半導体ウエハ以外の物でも、だれ
がなくかつ高精度にラツピングできる。 Furthermore, the present invention enables wrapping of objects other than semiconductor wafers with high precision and without any defects.
以上のように、本発明のラツピング装置によれ
ば、均一なラツピングが可能となり、ダレのない
平行度の高いラツピングが行なえる。 As described above, according to the wrapping device of the present invention, uniform wrapping is possible, and wrapping with high parallelism without sagging can be performed.
第1図は従来のラツピング装置の要部を示す断
面図、第2図は従来のラツピング装置におけるパ
ツドの状態を示す断面図、第3図は本発明の一実
施例によるラツピング装置の要部を示す断面図で
ある。
1……回転研磨盤、2……バフ、3……ウエ
ハ、4……保持体、5……支軸、6……軸受、7
……支持体、8……ウエイト、9……パツド、1
0……リテーナ、11……真空孔。
FIG. 1 is a sectional view showing the main parts of a conventional wrapping device, FIG. 2 is a sectional view showing the state of pads in the conventional wrapping device, and FIG. 3 is a sectional view showing the main parts of a wrapping device according to an embodiment of the present invention. FIG. DESCRIPTION OF SYMBOLS 1...Rotary polisher, 2...Buff, 3...Wafer, 4...Holder, 5...Spindle, 6...Bearing, 7
...Support, 8...Weight, 9...Pad, 1
0...Retainer, 11...Vacuum hole.
Claims (1)
を介して被研磨物を保持させ、前記保持体を貫通
するようにして前記パツドに開設された真空孔に
よる吸着作用によつて前記被研磨物を前記パツド
の保持面に吸着させ、前記保持体に設けられたリ
ング状のリテーナによつて前記被研磨物の周囲を
規制し、前記保持体に荷重を加えることによつて
前記被研磨物の研磨面を前記研磨盤面に押しつけ
つつ研磨するラツピング装置であつて、前記真空
孔が、前記パツドにおける前記保持面の周縁近傍
およびその内側に、それぞれ円周方向に開設され
ていることを特徴とするラツピング装置。1. The object to be polished is held on a holder facing the surface of the polishing disk via a water-absorbing pad, and the object to be polished is held by the adsorption action of vacuum holes formed in the pad so as to penetrate through the holder. is attracted to the holding surface of the pad, the circumference of the object to be polished is regulated by a ring-shaped retainer provided on the holder, and the object to be polished is fixed by applying a load to the holder. A lapping device for polishing a polishing surface while pressing it against the surface of the polishing disk, characterized in that the vacuum holes are opened in the circumferential direction near the periphery of the holding surface of the pad and inside the same. Wrapping device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56115089A JPS5822657A (en) | 1981-07-24 | 1981-07-24 | Lapping apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56115089A JPS5822657A (en) | 1981-07-24 | 1981-07-24 | Lapping apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5822657A JPS5822657A (en) | 1983-02-10 |
| JPH0569666B2 true JPH0569666B2 (en) | 1993-10-01 |
Family
ID=14653918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56115089A Granted JPS5822657A (en) | 1981-07-24 | 1981-07-24 | Lapping apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5822657A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60262A (en) * | 1983-06-17 | 1985-01-05 | 株式会社日立製作所 | refrigeration cycle |
| FR2677293A1 (en) * | 1991-06-06 | 1992-12-11 | Commissariat Energie Atomique | Polishing machine with improved wafer-support head |
| US5443416A (en) * | 1993-09-09 | 1995-08-22 | Cybeq Systems Incorporated | Rotary union for coupling fluids in a wafer polishing apparatus |
| JP3795198B2 (en) | 1997-09-10 | 2006-07-12 | 株式会社荏原製作所 | Substrate holding device and polishing apparatus provided with the substrate holding device |
| US6722963B1 (en) | 1999-08-03 | 2004-04-20 | Micron Technology, Inc. | Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
| JP2004040011A (en) * | 2002-07-08 | 2004-02-05 | Toyo Kohan Co Ltd | Tool, apparatus, and method for supplying and taking out substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS498163A (en) * | 1972-05-10 | 1974-01-24 |
-
1981
- 1981-07-24 JP JP56115089A patent/JPS5822657A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5822657A (en) | 1983-02-10 |
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