JPH0569913B2 - - Google Patents
Info
- Publication number
- JPH0569913B2 JPH0569913B2 JP57159303A JP15930382A JPH0569913B2 JP H0569913 B2 JPH0569913 B2 JP H0569913B2 JP 57159303 A JP57159303 A JP 57159303A JP 15930382 A JP15930382 A JP 15930382A JP H0569913 B2 JPH0569913 B2 JP H0569913B2
- Authority
- JP
- Japan
- Prior art keywords
- glow discharge
- reaction vessel
- thin film
- pressure
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はグロー放電によつて薄膜形成を行な
う装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in an apparatus for forming a thin film by glow discharge.
従来より用いられているグロー放電薄膜形成装
置の反応容器には、グロー放電に必要な真空を実
現するための高真空排気系だけが接続されてい
る。そして、反応容器室に高真空排気系を接続す
るための開口部や、真空ゲージを挿入するための
ゲージポートに対応する開口部、放電状態を監視
するための窓部等が凹部として形成されている。
A reaction vessel of a conventional glow discharge thin film forming apparatus is connected only to a high vacuum evacuation system for realizing the vacuum necessary for glow discharge. Then, an opening for connecting a high vacuum exhaust system to the reaction vessel chamber, an opening corresponding to a gauge port for inserting a vacuum gauge, a window for monitoring the discharge state, etc. are formed as recesses. There is.
ところがこの状態でグロー放電を行なうと、こ
れらの凹部にもプラズマが侵入するため例えばモ
ノシランを用いたグロー放電の場合などでは褐色
粉末が形成されて内壁に付着したりホローカソー
ド放電を発生して放電が不安定になつたりするこ
とが往々にしてあつた。この粉末は次のグロー放
電成膜に対し膜質劣化やピンホール発生等の悪影
響を与えるため、１つの成膜工程終了後直ちに除
去しなければならないが、前記凹部内に付着した
ものは、オペレーターの手がそこまで入り込まな
い等の制約により完全に除去することは難かし
い。又、ホローカソード放電や異常放電を発生し
た場合には形成する薄膜そのものの特性が不良と
なつてしまうという欠点があつた。 However, when glow discharge is performed in this state, plasma also invades these recesses, so in the case of glow discharge using monosilane, for example, brown powder is formed and adheres to the inner wall, or a hollow cathode discharge is generated and the discharge is interrupted. It often became unstable. This powder has an adverse effect on the next glow discharge film formation, such as deterioration of film quality and generation of pinholes, so it must be removed immediately after the completion of one film formation process. It is difficult to completely remove it due to restrictions such as not being able to get your hands into it that far. Another drawback is that when hollow cathode discharge or abnormal discharge occurs, the properties of the formed thin film itself become poor.
本発明は上述した欠点を改良したものでグロー
放電を生起する反応容器内で異常放電を生ぜず、
又、形成する膜の特性に悪影響を及ぼす粉末の発
生を抑制する効果を持つグロー放電による薄膜形
成装置を提供することを目的とする。
The present invention improves the above-mentioned drawbacks, and does not cause abnormal discharge in the reaction vessel that generates glow discharge.
Another object of the present invention is to provide a thin film forming apparatus using glow discharge, which has the effect of suppressing the generation of powder that adversely affects the properties of the film to be formed.
本発明は上記の目的を達成するため、本発明の
グロー放電による薄膜形成装置は、グロー放電前
に反応室内の圧力を所定のレベルまで下げるため
の第１の真空排気系（高真空排気系）に加えて、
上記反応室内の成膜時の圧力を所定のレベルに保
つための第２の真空排気系を備え、更に、反応容
器に第１の真空排気系を接続するための開口部
に、この開口部における凹凸などの幾何学的な均
一性を改善するための開閉可能な遮蔽板を備えて
いる特徴とする。
In order to achieve the above object, the present invention provides a thin film forming apparatus using glow discharge according to the present invention. In addition to,
A second evacuation system is provided to maintain the pressure in the reaction chamber at a predetermined level during film formation, and the opening for connecting the first evacuation system to the reaction chamber is further provided with a It is characterized by a shielding plate that can be opened and closed to improve geometric uniformity such as unevenness.
本発明の薄膜形成装置によれば、第１の高真空
排気系によりグロー放電に必要な高真空を確保で
きる。更に、反応室内に原料ガスを導入して成膜
を行なう際に、第２の高真空排気系により反応室
内の使用済みのガス等を適切量だけ外部に排気し
ながら成膜を行なうことができる。このため、反
応室内のガスを適切量だけ外部に排気しながら成
膜を行なうことができ、粉末（反応生成物）によ
る膜特性の劣化を防止できる。
According to the thin film forming apparatus of the present invention, the first high vacuum evacuation system can ensure the high vacuum necessary for glow discharge. Furthermore, when film formation is performed by introducing raw material gas into the reaction chamber, film formation can be performed while evacuating an appropriate amount of used gas, etc. from the reaction chamber to the outside using the second high-vacuum exhaust system. . Therefore, film formation can be performed while exhausting an appropriate amount of gas from the reaction chamber to the outside, and deterioration of film characteristics due to powder (reaction product) can be prevented.
また、反応容器に第１の真空排気系を接続する
ための開口部を遮蔽板で閉じて成膜を行なえば、
幾何学的な不均一性を改善でき、上記開口部にお
ける電位分布が一様になる分だけ異常放電が発生
し難くなるという効果が得られる。しかも、遮蔽
板によつて上記開口部へのプラズマの侵入を遮断
できるので、第２の真空排気系による粉末の排気
が不完全であつても、上記開口部の凹部分におけ
る粉末の発生を防止できる。 Furthermore, if the opening for connecting the first evacuation system to the reaction vessel is closed with a shielding plate and film formation is performed,
Geometric non-uniformity can be improved, and the potential distribution in the opening becomes uniform, which makes abnormal discharge less likely to occur. Furthermore, since the shielding plate can block plasma from entering the opening, even if the powder is not fully evacuated by the second vacuum evacuation system, generation of powder in the concave portion of the opening can be prevented. can.
更に具体的には、本発明によれば例えばアモル
フアスシリコン膜形成においては通常のモノシラ
ンガス（SiH4）のグロー放電分解の際発生する
茶褐色粉末が反応容器において全く発生せず、又
極めて安定した放電が得られることから同時に形
成された複数個の基板上のアモルフアスシリコン
膜の膜厚や暗導電率、明導電率等の特性にもバラ
ツキはほとんどないことが確認されている。 More specifically, according to the present invention, for example, in the formation of an amorphous silicon film, no brown powder, which is generated during the glow discharge decomposition of monosilane gas (SiH 4 ), is generated in the reaction vessel at all, and an extremely stable discharge is achieved. It has been confirmed that there is almost no variation in the properties such as the film thickness, dark conductivity, bright conductivity, etc. of the amorphous silicon films formed on multiple substrates simultaneously.
又、前記反応容器を第１の排気系に接続するた
めの開口部内での茶褐色粉末の付着が無いことか
ら、膜形成後の反応容器内のクリーニング工程も
大幅に短縮されるという生産上有益な効果も現れ
た。 In addition, since there is no adhesion of brown powder in the opening for connecting the reaction vessel to the first exhaust system, the cleaning process inside the reaction vessel after film formation is greatly shortened, which is beneficial for production. The effects were also visible.
図は、本発明の一実施例のグロー放電装置を模
式的に示す平面図である。反応容器１の内部に
は、試料支持台２があり、所定の基板３がこの試
料支持台２上に設置されている。又、この反応容
器１は真空バルブ４を介して高真空排気系Ａに、
同じく真空バルブ５を介してメカニカルブースタ
ーポンプによる排気系Ｂに接続されている。
The figure is a plan view schematically showing a glow discharge device according to an embodiment of the present invention. A sample support stand 2 is provided inside the reaction vessel 1, and a predetermined substrate 3 is placed on this sample support stand 2. In addition, this reaction vessel 1 is connected to a high vacuum exhaust system A via a vacuum valve 4.
Similarly, it is connected via a vacuum valve 5 to an exhaust system B using a mechanical booster pump.
通常の操作手順においてはまずバルブ４を開け
て高真空排気系Ａ（第１の排気系）により反応容
器１を５×10-6Torr以下の高真空に排気し、次
いでバルブ４を閉じてからストツプバルブ６を開
け、ガス導入管７を通して反応容器１内へモノシ
ランガスを30SCCMの流量で導入する。反応容器
１内の圧力が1Torrになつてからバルブ５を開け
てメカニカルブ−スターポンプによる排気系Ｂ
（第２の排気系）により0.5Torrに保つて排気を
続けながらRF電力（13.56MHz）を印加してグロ
ー放電を生起することにより基板３上にアモルフ
アスシリコン膜を形成することになる。 In the normal operating procedure, first open the valve 4 and evacuate the reaction vessel 1 to a high vacuum of 5×10 -6 Torr or less using the high vacuum evacuation system A (first evacuation system), then close the valve 4, and then The stop valve 6 is opened and monosilane gas is introduced into the reaction vessel 1 through the gas introduction pipe 7 at a flow rate of 30 SCCM. After the pressure inside the reaction vessel 1 reaches 1 Torr, open the valve 5 and start the exhaust system B using the mechanical booster pump.
An amorphous silicon film is formed on the substrate 3 by applying RF power (13.56 MHz) while continuously evacuation is maintained at 0.5 Torr by the second evacuation system to generate glow discharge.
ところで、反応容器１のグロー放電を生起する
領域の内壁面には、反応容器１を高真空排気系Ａ
に接続するための開口部が設けられており、これ
によつて、高真空排気系Ａに接合するためのバル
ブ４までの部分が凹部８となるので、このままで
はここにプラズマが侵入したり、異常放電を起こ
したりすることになる。そこで本実施例では遮蔽
板９によりこの凹部８を覆つた。この遮蔽板９は
反応容器１と同じくステンレスから成り、矢印で
示すように横方向へスライドさせることにより開
閉可能な構造とした。 By the way, a high vacuum evacuation system A is installed on the inner wall surface of the reaction container 1 in the area where glow discharge occurs.
As a result, the part up to the valve 4 for connecting to the high vacuum evacuation system A becomes a recess 8, so if it continues as it is, plasma will not enter here. This may cause abnormal discharge. Therefore, in this embodiment, the recess 8 is covered with a shielding plate 9. This shielding plate 9 is made of stainless steel like the reaction vessel 1, and has a structure that can be opened and closed by sliding it laterally as shown by the arrow.
この遮蔽板９によつて凹部８を覆うことにより
グロー放電中に異常放電を生ずることはなくな
り、又プラズマの凹部８への侵入が無いことか
ら、この部分での茶褐色粉の発生も皆無となつ
た。このため、ピンホール等の膜質劣化は無くな
り再現性の良い膜が得られるようになつた。又高
真空側のバルブ４までの凹部８に茶褐色粉が付着
しないことから装置としての保守が容易となつ
た。なお、排気系Ｂと反応容器１とを接続するた
めの開口部にも凹部が形成されているが、メカニ
カルブースタポンプによつて凹部の粉末は外部に
排気されるので問題はない。 By covering the recess 8 with the shielding plate 9, abnormal discharge will not occur during glow discharge, and since plasma will not enter the recess 8, no brown powder will be generated in this area. Ta. Therefore, deterioration of film quality such as pinholes is eliminated, and a film with good reproducibility can be obtained. Furthermore, since brown powder does not adhere to the concave portion 8 up to the valve 4 on the high vacuum side, maintenance of the device is facilitated. Although a recess is also formed in the opening for connecting the exhaust system B and the reaction vessel 1, there is no problem because the powder in the recess is exhausted to the outside by the mechanical booster pump.
尚、本実施例においては遮蔽板９はステンレス
板としたが、これに限定することなく、形成する
薄膜の特性に影響を及ぼさない材料であれば例え
ばアルミニウム、鉄、ニツケル、銅、テフロン、
ポリイミド、ガラス、石英等であつても良い。 In this embodiment, the shielding plate 9 is made of stainless steel, but it is not limited to this, and any material that does not affect the characteristics of the thin film to be formed may be used, such as aluminum, iron, nickel, copper, Teflon, etc.
It may also be made of polyimide, glass, quartz, etc.
又、開閉の方法は手動であつても、自動であつ
ても良いし開閉の方式もスライド式以外の例えば
一点を軸にした回転シヤツター方式でも良い事は
勿論である。 Further, the opening/closing method may be manual or automatic, and it goes without saying that the opening/closing method may be other than the sliding type, for example, a rotary shutter type centered on one point.
図は本発明の一実施例を説明するための装置平
面図である。
１……反応容器、２……試料支持台、３……試
料（基板）、４，５……真空バルブ、６……スト
ツプバルブ、７……ガス導入管、８……凹部、９
……遮蔽板。
The figure is a plan view of an apparatus for explaining one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Reaction container, 2... Sample support stand, 3... Sample (substrate), 4, 5... Vacuum valve, 6... Stop valve, 7... Gas introduction tube, 8... Recess, 9
……Shield.
Claims (1)
り原料ガスを分解して所定基板上に薄膜を形成す
る装置において、前記グロー放電を生起する前に
前記反応容器内の圧力を所定の圧力まで下げるた
めの第１の真空排気系と、成膜時に前記反応器内
の原料ガスを排気して前記反応容器内の圧力を所
定の圧力に保つための第２の真空排気系と、前記
反応容器のグロー放電を生起する領域の内壁面に
設けられた、前記反応容器を前記第１の排気系に
接続するための開口部に、この開口部における幾
何学的な均一性を改善する開閉可能な遮蔽板とを
具備してなることを特徴とするグロー放電による
薄膜形成装置。 ２ 前記薄膜はアモルフアスシリコン膜である特
許請求の範囲第１項記載のグロー放電による薄膜
形成装置。[Scope of Claims] 1. In an apparatus for decomposing a source gas to form a thin film on a predetermined substrate by generating a glow discharge in a reaction vessel, the pressure in the reaction vessel is reduced before generating the glow discharge. a first evacuation system for lowering the pressure to a predetermined pressure; and a second evacuation system for evacuating the raw material gas in the reactor during film formation to maintain the pressure in the reaction container at a predetermined pressure. , an opening for connecting the reaction vessel to the first exhaust system, which is provided on an inner wall surface of a region of the reaction vessel where glow discharge occurs, to improve geometric uniformity in this opening; What is claimed is: 1. A thin film forming apparatus using glow discharge, comprising: a shielding plate that can be opened and closed; 2. A thin film forming apparatus using glow discharge according to claim 1, wherein the thin film is an amorphous silicon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15930382A JPS5950166A (en) | 1982-09-13 | 1982-09-13 | Thin film forming device by glow discharge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15930382A JPS5950166A (en) | 1982-09-13 | 1982-09-13 | Thin film forming device by glow discharge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5950166A JPS5950166A (en) | 1984-03-23 |
| JPH0569913B2 true JPH0569913B2 (en) | 1993-10-04 |
Family
ID=15690849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15930382A Granted JPS5950166A (en) | 1982-09-13 | 1982-09-13 | Thin film forming device by glow discharge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5950166A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0757863B2 (en) * | 1987-12-29 | 1995-06-21 | 日本合成化学工業株式会社 | Pressure sensitive adhesive composition |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5372460A (en) * | 1976-12-10 | 1978-06-27 | Hitachi Ltd | Plasma cvd unit |
| JPS556409A (en) * | 1978-06-26 | 1980-01-17 | Hitachi Ltd | Plasma gas phase reactor |
-
1982
- 1982-09-13 JP JP15930382A patent/JPS5950166A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5950166A (en) | 1984-03-23 |
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