JPH0570299B2 - - Google Patents

Description

[Detailed Description of the Invention] [Technical field to which the invention pertains] The present invention relates to a semiconductor vapor phase growth apparatus, and in particular to a method for easily creating and executing a process program for easily controlling the process of this type of apparatus. The present invention relates to a process control device.

[Prior art and its problems]

BACKGROUND ART Today, a semiconductor vapor phase growth apparatus for vapor phase growth on a semiconductor wafer is used as an apparatus for mass producing semiconductor single crystals. In this semiconductor vapor phase growth apparatus, it is necessary to easily and reliably set the flow rate of the gas used, the temperature inside the reactor, etc. as the process progresses within the reactor.

From this point of view, the applicant first developed a reactor for performing vapor phase growth on a substrate such as silicon;
A means for heating the substrate, a network of pipes connecting the reactor and various gas sources necessary for vapor phase growth, and forming the network of pipes so as to guide desired amounts of the various gases to the reactor. a valve device provided on the pipe network;
In a semiconductor vapor phase growth apparatus configured with a control device that provides signals for controlling ON/OFF of these valve devices or their opening degree, the control device that controls the valve device has a control device for controlling the vapor phase growth in the reactor. A process program group consisting of a series of process programs including information on time for specifying a process, used gas and its flow rate, and furnace temperature, and a system that decodes this process program group to form a control signal for the valve device. Developed a process control device that held programs and filed a patent application.

That is, the semiconductor vapor phase growth apparatus according to the patent application is mainly capable of programmably controlling a plurality of reactors using a common process control device. However, this type of process control equipment that has been implemented in the past manually adjusts various control objects, measures the created wafer at each step of forming the target epitaxial layer, and measures the results. The control object is readjusted according to the following. For this reason, there is a high possibility of making a mistake in the adjustment operation of the controlled object, which has the disadvantage of increasing the incidence of defective products. In addition, from the standpoint of preventing the occurrence of these defective products, sufficient attention is required to avoid mistakes when measuring the manufactured wafers and adjusting the controlled objects, which is a drawback that burdens the operator with a great deal of labor. It was hot.

However, when producing a desired semiconductor wafer using the above-mentioned vapor phase growth apparatus, a vapor phase growth layer having the desired thickness and resistivity cannot be obtained depending on the type of gas used, its flow rate, operation time, and temperature conditions of the reactor. can get. Therefore, the thickness and resistivity are the most important target values for the vapor-grown layer obtained in this way. Then, when we measured the characteristics of the thickness and resistivity of the vapor-phase grown layer, we found that the thickness [μ/min] is equivalent to the amount of source gas (SiCl ₄ , SiH ₂ Cl _{2 ,} etc.) per unit time [g/min]. On the other hand, as shown in Figure 1, there is a nearly linear relationship, and the resistivity [Ω
cm] is the amount of dopant gas per unit time (B ₂ H ₆
N gas such as or P gas such as PH ₃ ) [cc/mia]
It was confirmed that there is a substantially linear relationship with the logarithm value of , as shown in FIG. In addition, Figures 1 and 2
In the measurement example shown in the figure, the condition is that hydrogen gas H ₂ is used at 80/min as the reference base gas. Therefore, from the above-described measurement results, the target thickness and resistivity of the vapor-grown layer formed on the semiconductor wafer are defined as functions of the source gas amount and the dopant gas amount. Therefore, by setting a predetermined target value, the source gas amount and dopant gas amount are determined, and based on this, the opening/closing time and opening degree of the valve device that is subject to process control, the furnace temperature, etc. can be easily calculated. It is possible to easily create a process program.

In addition, in this type of semiconductor vapor phase growth apparatus, when batch operations are performed multiple times to obtain the same wafer using the same reactor and based on the same process program, the thickness and resistivity will be For example, as shown in FIGS. 3 and 4, a tendency that changes depending on the number of batches is shown. This tendency is caused by the fact that as the reaction time increases, the inside of the reactor gets dirty, causing errors in the system that detects the temperature inside the reactor from outside using a sensor and controls temperature heating, or when the wafers are placed. This is thought to be due to the fact that a vapor phase growth layer is also formed on the susceptor, which gradually changes the atmosphere of the wafer. Furthermore, there is no guarantee that these changing trends will change linearly as the number of batches increases. In other words, it has been confirmed that these change trends have unique characteristics depending on each device.

Therefore, we patterned the tendency that changes depending on the number of batches of the vapor phase growth layer described above according to the equipment,
If the contents of the process program described above are configured to be corrected for each batch, it is possible to realize even more accurate process control of the semiconductor vapor phase growth apparatus.

[Purpose of the invention]

An object of the present invention is to provide a semiconductor vapor phase growth apparatus for forming a vapor phase growth layer with impurities mixed therein on a semiconductor substrate such as a silicon wafer, in which a source gas and a dopant gas can be programmed in relation to their flow rates and sequence times. By setting the value and correcting the set value in response to the pattern of thickness and resistivity that changes depending on the number of batches using the same device, it is possible to easily form a vapor phase grown layer with a predetermined thickness and resistivity. An object of the present invention is to provide a process control device that allows growth with high precision.

[Key points of the invention]

A process control device for a semiconductor vapor phase growth apparatus according to the present invention includes a reactor for performing vapor phase growth on a substrate such as silicon, means for heating the substrate, and various gases necessary for the reactor and vapor phase growth. a pipe network connecting the source to the reactor; a valve device provided on the pipe network to guide desired amounts of various gases to the reactor; and a valve device for specifying the vapor phase growth process within the reactor. It has a sequence program that stores information regarding the sequence time, gas used, its flow rate, and temperature as parameter data,
- A process control device for a semiconductor vapor phase growth apparatus comprising a signal for controlling OFF or its opening degree and a process control means for providing a signal for controlling the heating means, the vapor phase changing depending on the number of batch operations. Data on the inter-batch thickness correction value obtained from the correlation between the thickness of the grown layer and the preset target thickness, and the resistivity of the vapor grown layer that changes with each batch operation and the preset target resistivity. a memory storing at least one data of inter-data resistivity correction value data obtained from the correlation, and approximating the contents of the process program to at least one of a target thickness and a target resistivity for each batch operation. The present invention is characterized in that it is provided with a process program correction means for correcting the process program.

Note that in the process control device for the semiconductor vapor phase growth apparatus described above, a sequence time correction value can be used as the data for the inter-batch thickness correction value. In addition, the data for the inter-batch resistivity correction value includes:
A correction value for gas flow rate can be used.

[Embodiments of the invention]

Next, embodiments of a process control apparatus for a semiconductor vapor phase growth apparatus according to the present invention will be described in detail below with reference to the accompanying drawings.

FIG. 5 is a sectional view showing the structure of a reactor constituting a semiconductor vapor phase growth apparatus to which the process control apparatus of the present invention is applied.

That is, in FIG. 5, reference numeral 10 indicates a bottom plate, and a pipe line 12 for introducing gas to be subjected to vapor phase growth in the furnace is inserted through the bottom center of the bottom plate 10. It is constructed so that gas is introduced through an inlet 14 provided at the lower end of the conduit 12 and ejected from a fumarole hole 16 provided at the top of the conduit 12 . A rotating member 20 that supports the susceptor 18 at the top thereof is disposed surrounding the outer circumference of the conduit 12, and this rotating member 20 is connected to a motor 22 with a reduction gear.
It is configured to rotate by. Susceptor 1
8, an induction heating coil 26 is arranged with a cover 24 in between. The coil 26 is supported by an insulating plate 28, which is connected to the bolt 3.
0 and is fixed above the bottom plate 10. Each of the coils 26 is introduced into the furnace through the bottom plate 10, and is connected to an external high-frequency current supply cable via connection joints 32, 34 at a position close to the bottom plate 10.

On the other hand, reference numeral 36 indicates a ceiling cover disposed on the bottom plate 10, and this ceiling cover 36 has a three-layer structure, each consisting of a quartz layer 38, a first stainless steel layer 40, and a second stainless steel layer 42 from the inside. They are each arranged with a gap in between. A flange 44 is appropriately provided on the outer peripheral surface of the lower part of the ceiling cover 36, and the flange 44 is configured to be pressed and fixed onto the bottom plate 10 by an air sealing device 48 via a clamp member 46. Moreover, in a part of the ceiling cover 36,
Susceptor 18 and wafer 50 placed thereon
An observation window 52 is provided for observing the wafer 50 and the susceptor 18 from the outside, and a temperature detection window 56 is provided with a sensor 54 that can detect the temperature of the wafer 50 and the susceptor 18 by light incident through the quartz layer 38. There is.

A bracket 58 is provided integrally with the ceiling cover 36, and this bracket 58 is configured to be movable up and down by being coupled to a piston of a cylinder device (not shown).
The ceiling cover 36 can be moved upward when replacing the 0, etc.

FIG. 6 shows a piping system diagram for various gases connected to the reactor shown in FIG. 5 having the above-described configuration.

That is, in FIG. 6, reference numerals 60, 6
Reference numerals 2, 64, 66, and 68 indicate gas chambers, and N ₂ ,
The gases H ₂ , _DN , _DP and HCl are each sealed. Further, reference numeral 70 indicates a bubbling chamber, in which SiCl ₄ or
Filled with SiHCl ₃ liquid.

A conduit extending upward from the chamber 60 is provided with a pressure switch PS1 and a normally open valve 1 (hereinafter, a normally open valve will be denoted by a minus sign), and communicates with a valve PV7. Similarly, chamber 62
A pressure switch PS2 is installed in the pipe line extending upward from the
A valve PV2 is provided and communicates with valve PV8. The output ports of the valves PV7 and PV8 merge and are connected to the pipe line PL1 via the mass flow valve MFC1. There is also a gas merging valve PV19 on the pipe PL1,
PV20 is installed between the reactor and the pipe line
Valve the gas supplied by PL/A and PL2A
It is configured so that it can be mixed by exciting PV19 and PV20.

Two pipelines PL3A and PL3B extend from the chamber 70 via the valve PV3 and are connected to the valve VC1. Port P0 of this valve VC1 has hydrogen gas _H2
is introduced, and this gas H ₂ is led out from port P2, introduced into bubbling chamber 70 through pipe PL3A and valve PV3, and discharged into liquid SiCl ₄ to perform bubbling. Therefore, a mixed gas of vaporized SiCl ₄ and H ₂ is generated in the space inside the chamber 70, and this gas passes through the input port P3 and output port P1 of the valve VC1 through the valve PV3 on the pipe PL3B. Guided to conduit PL6A.

Mass flow valves MFC4, MFC5, and MFC6 are connected to a conduit extending upward from the chamber 64 that encloses the dopant N gas via a valve PV5.
The input sides of these valves MFC4 to 6 are connected to the hydrogen gas H ₂ pipeline PL5 via the valve PV9, and the dopant N gas mixed with the hydrogen gas H ₂ is guided from the output side to the pipeline PL1A. It will be destroyed.

A similar piping system is configured for the conduit extending upwardly from the chamber 66 containing the dopant P gas. In this case, it will be understood from the drawing that the valves PV23, PV24 and the mass flow valves MFC8, MFC9, MFC10 correspond to each of the above-mentioned valves.

Furthermore, a valve PV6A, a mass flow valve
MFC7 is provided and connected to the mixing port of merging valve PV20. A conduit PL5 is connected to the upstream side of the mass flow valve MFC7 via a valve 6.

Figure 7 shows a control system diagram of mass flow valves MFC1 to 10 (MFC3 is not included; the same applies hereinafter) that are program-controlled in the various gas piping systems introduced to the reactor shown in Figure 6 above. It is.
In other words, commands are given to each mass flow valve based on a predetermined process program.
Equipped with a process control device 72 with a built-in CPU,
From this process control device 72 to each mass flow valve
Command value voltages are supplied to MFCs 1 to 10 via D/A converters 74, respectively. On the other hand, an analog multiplexer 76 sequentially extracts the outputs from the flow rate detectors DT attached to each mass flow valve MFC1 to MFC10, and is configured to input these to the process control device 72 via an A/D converter 78. Ru.

Next, regarding the process program control operation when performing vapor phase growth of a semiconductor in the reactor shown in FIG. 5 based on the control system shown in FIGS. 6 and 7 described above, we will explain the typical process program control operation shown in FIG. 8. The explanation will be based on the process program.

In Fig. 8, the contents of the process program PP(1) indicate N ₂ Purge, which means that nitrogen gas N ₂ is supplied for 3 minutes.
Supplied at a flow rate of FN1/min. Therefore, in FIG. 6, nitrogen gas _N2 is discharged from the chamber 60.
Pass through PV1, valve PV7, MFC1, and then valve PV19,
It enters the reactor R1 through PV20 and is purged through the reactor exhaust port. In this case, the flow rate
FN1/min is given from the process control device 72 shown in FIG. 7 as a voltage command value for the mass flow valve MFC1.

Process program PP(2) indicates H ₂ Purg,
Supply hydrogen gas _H2 at a flow rate of FH2/min for 3 minutes. Hydrogen gas _H2 is supplied through valves PV2, PV8, MFC1,
Passes through PV19 and PV20, enters reactor R1, and the above N ₂
Purging is performed in the same way as purging.

The following process program PP(3) [hereinafter referred to as PP(i)] indicates HEAT ON(1), and the supply amount of hydrogen gas H ₂ to the reactor is EH2/min, and the status of each valve does not change. . Then, the induction heating furnace is set to the first stage level and heated for 3 minutes to reach the first set temperature θ1.

Next, in the process program PP(4), the hydrogen gas H ₂ is heated at the second stage level so that the set temperature θ2° C. is achieved while keeping the same flow rate, and heating is performed for 3 minutes.

Process program PP(5) indicates HCl VENT. In this case, the settings are 3 minutes, hydrogen gas
The flow rate is FH2/min for H ₂ and FHCL/min for HCl. Hydrogen chloride HCl valve PV6A, MFC7,
Flows through PV20 and reactor R1 to the ventro. HCl flow rate FHCL/min is mass flow valve
Set by the voltage command value to MFC7.

Process program PP(6) shows HCl ETCH and lasts for 3 minutes. Therefore, in accordance with the process program PP(5), it is combined with hydrogen gas H ₂ at the merging valve PV20 and supplied to the reactor R1.

Process program PP(7) indicates H ₂ Purge, which is continued for 3 minutes in the same manner as process program PP(2).

Process program PP(8) is HEAT DOWN
The inside of the reactor is set from θ2℃ to θ3℃. When this 3-minute process program PP(8) is completed, preparations for vapor phase growth are almost completed, and the process then shifts to process program PP(9).

The process program PP (9) shows EPi VENT (1), and hydrogen gas H ₂ is fed at FH2/min for 3 minutes.
Dopant P gas D _P is supplied at a flow rate of FDPcc/min, and silicon tetrachloride SiCl ₄ is supplied at a flow rate of FS1 g/min.
Hydrogen gas _H2 goes through valve PV2 → VC1 → PV3 → chamber 7
0, and gaseous SiCl ₄ is released from this chamber 70.
The _mixed gas of
Supplied to PL6A. On the other hand, chamber 66
Since the dopant P gas D _P is supplied from PV23, MFC8, MFC9, and MFC10 through the valves PV23, MFC8, MFC9, and MFC10, this gas D _P and the H ₂ + SiCl ₄ that has reached the pipe PL6A merge and are discharged to the vent VENT. Ru.

Process program PP(10) indicates EPi DEPO, the flow rate of each gas is the same as process program P(9), and valve PV19 is in the ON state. This state continues for 3 minutes. Therefore, the gas (D _P + H ₂ + SiCl ₄ ) supplied to the pipe PL1A joins at the valve PV19, and further enters the reactor through the main port of the valve PV20, and gases the P-type semiconductor onto the wafer on the susceptor. grow in phase. The growth reaction in this case is a reversible hydrogen reduction reaction as shown in the following equation.

SiCl ₄ +2H ₂ Si + 4HCl In this way, Si is accumulated on the wafer.
The dopant P gas D _P is usually phosphine.
PH ₃ is used. This process program PP
When 3 minutes have elapsed in (10), the vapor phase growth ends.

Process program PP(11) indicates H ₂ Purge, and similarly to process program PP(2), hydrogen gas H ₂ is supplied at a flow rate of FH ₂ /min for 3 minutes.

Process program PP(12), PP(13), PP(14) are
It is not used in this embodiment.

The process program PP(15) indicates HEAT OFF and cuts off the power supply to the induction heating coil. In this case, the reason why the time was set to 3 minutes was to allow for the time required for the temperature inside the furnace to decrease. During this time, hydrogen gas _H2 is also supplied at a flow rate of FH2/min.

Process program PP(16) indicates H ₂ Purge, and similarly to process program PP(2), hydrogen gas H ₂ is supplied at a flow rate of FH2/min for 3 minutes.

And the process program PP(17) is N ₂
Indicate Purge and supply nitrogen gas N ₂ at a flow rate of FN17/min for 3 minutes.

One step of semiconductor vapor phase growth is completed by the above process programs PP(1) to PP(17).

In the vapor phase growth reaction under process program control described above, a case is shown in which a P-type semiconductor is grown in a vapor phase on a wafer, but when an N-type semiconductor is grown in a vapor phase, the dopant N gas D in the chamber 64 is _N valve PV5, PV9, MFC4, MFC5,
Configure to feed via MFC6. In this case, the dopant N gas D _N is B ₂ H ₆
(Diborane) is preferably used.

Next, in the semiconductor vapor phase growth apparatus described above,
The configuration of a process control device for programmably performing a semiconductor vapor phase growth operation will be described.

FIG. 9 shows each process program group configuring one process program group (hereinafter referred to as PPG(i)) stored and held in the program memory for the CPU of the process control device 72 shown in FIG. FIG. 3 is a format diagram of a process program. In other words, this process program group stores data related to the sequence number, data size, sequence time, data bit code, temperature, or gas flow rate for each sequence unit, and is continuous from PP(1) to PP(n) for each program. It is composed of

FIG. 10 shows a format diagram of a thickness data table stored and held in the data memory for the CPU of the process control device 72, like the process program. This thickness data table is based on the relationship shown in FIG.
The thickness of the vapor-phase growth layer is divided in advance, and the optimum sequence time and source gas flow rate are set for each divided thickness. That is, in FIG. 10, the thickness data I _V to N _V and the addresses where the data are stored are sequentially stored in the data memory for each thickness data, and then the corresponding sequence time is stored for each address specified by the thickness data. and the source gas flow rate are sequentially stored in the data memory.

Similar to FIG. 10, FIG. 11 shows a format diagram of a resistivity data table stored and held in the data memory for the CPU of the process control device 72. In this resistivity data table, the resistivity of the vapor-phase grown layer is classified in advance based on the relationship shown in FIG. 2 described above, and the optimum dopant gas flow rate is set for each classified resistance value.
That is, in FIG. 11, the resistivity data I _R
~N _R and the address where the data is stored are stored in the data memory sequentially for each resistivity data, and then the dopant gas flow rate corresponding to each address specified by the resistivity data is sequentially stored in the data memory. be.

When creating a process program for a predetermined process using the thickness data table and resistivity data table stored in the data memory for the CPU in this way, the following procedure may be used.

First, thickness data and resistivity data are input into the data memory of the CPU. Inputting the thickness data is performed based on the flowchart shown in FIG. 12, and is completed by setting the thickness data input end flag. In addition, the input of resistivity data is
The process is carried out based on the flowchart shown in FIG. 3, and is completed by setting the resistivity data input completion flag. In this way, the thickness data input end flag and resistivity data input flag set in the data memory of the CPU are set as shown in FIGS. 10 and 11 based on the flowchart shown in FIG.
The thickness data table and resistivity data table shown in the figure are searched, a process program of a target sequence as shown in FIG. 9 is created, and this is set in the data flag.

That is, when creating a process program for inputting predetermined thickness data and resistivity data to assemble a target sequence that can execute the desired semiconductor vapor phase growth, first set the thickness data input end flag and then execute this process. The thickness input data and the thickness data table shown in FIG. 10 are searched for the same value, and if matching data is found, the corresponding sequence time and gas flow rate are read out and this data is temporarily held in the memory. Next, set the resistivity data input end flag, search for the same value as this resistivity input data in the resistivity data table shown in Fig. 11, and if there is matching data, store the corresponding gas flow rate in memory. This data is read together with the data temporarily held in the memory mentioned above to create a target sequence and written to the memory. Then, based on this target sequence, a process program shown in FIG. 9 is created, and this process program is set in a data flag to complete the process program.

However, when controlling a semiconductor vapor phase growth apparatus using a process control device using a process program set in this way, it is possible to obtain a product approximately in accordance with the target value in the first batch operation, but if the same device When batch operations are performed multiple times according to the same process program using the same process program, the thickness and resistivity change as shown in FIGS. 3 and 4, as described above. Therefore, by grasping such a change tendency (pattern) as a function unique to the apparatus and correcting the gas flow rate or sequence time, it is possible to always manufacture a product with a stable target thickness and resistivity.

By the way, when creating the process program mentioned above, for example, the sequence time for the target thickness is determined in proportion to the gas flow rate under certain temperature conditions, and the ratio of this gas flow rate is expressed in units of μ/min and is generally It is called growth rate. Further, the target resistivity is independent of the sequence time and is proportional (log proportional) only to the gas flow rate. Therefore, the correction value for performing the above-described correction can be determined using the proportional value. Next, an example of inter-batch correction of target thickness and target resistivity using a preset process program will be described.

1 Batch-to-Batch Correction of Target Thickness If the change trend for each batch operation with respect to the target thickness is that the thickness increases by t ₂ in the second operation, and by t _N in the N-th operation, then The interval correction value is expressed by the following formula.

2nd inter-batch thickness correction value △t ₂ [minutes or seconds] △t ₂ = t ₂ / growth time Nth inter-batch thickness correction value △t _N [minutes or seconds] △t _N = t _N / growth time Therefore, a data table of inter-batch thickness correction values is created using these correction values as shown in FIG.
Store in the CPU's data memory.

Therefore, when performing the inter-batch correction of the target thickness, the data table shown in FIG. 15 is searched for each batch operation, a predetermined inter-batch thickness correction value is extracted, and the process program regarding the sequence time is changed.

2 Inter-batch correction of target resistivity As with the target thickness, the target resistivity tends to change with each batch operation, and therefore, the inter-batch resistivity correction value should be created in the same way as the inter-batch thickness correction value. I can do it. In this case, the resistivity is proportional (log proportional) to the flow rate of the dopant gas with respect to the reference base gas (e.g., hydrogen gas H ₂ ), so the flow rate of the reference base gas or dopant gas can be used as a correction value. . The reference base gas also affects the target thickness, so it is better not to change it, but it may be changed, including the growth rate of the target thickness, if necessary.

Therefore, as a correction value for the flow rate of the dopant gas, a data table of inter-batch resistivity correction values is created as shown in FIG. 16, and this is stored in the data memory of the CPU of the process control device 72 in the same manner as above. do.

Therefore, when performing batch-to-batch correction of the target resistivity, the data table shown in FIG. conduct.

The above-mentioned inter-batch correction of the target thickness and target resistivity is based on the inter-batch correction flowchart shown in FIG. 17, and the sequence time and dopant gas are Correct the flow rate and change or rewrite the process program. Moreover, such inter-batch correction of the process program is automatically performed every time one step of the process is completed (every time a batch is completed) based on the above-mentioned inter-batch correction flowchart.

Typically, instead of using the data table regarding the inter-batch thickness correction value and the inter-batch resistivity correction value described above, the same correction may be processed using an arithmetic expression.

〔Effect of the invention〕

As is clear from the embodiments described above, according to the present invention, when programmably executing process control of a semiconductor vapor phase growth apparatus, a sequence program set in advance based on data regarding the thickness and resistivity of a desired product is executed. Changes in target thickness and target resistivity that occur as the number of batch operations increases can be programmably corrected using correction values related to sequence time and gas flow rate corresponding to the changes, making it possible to re-create the process program. It is possible to easily change the quantity of a product that is always homogeneous.

Furthermore, according to the process control device of the present invention, when changing the product rating or manufacturing a different type of product, the process program can be changed quickly and appropriately using computer functions, making it easy to change the setup of the device. Therefore, it is possible to easily reduce the manufacturing cost of the product. Furthermore, by using the device of the present invention, multiple semiconductor vapor phase growth devices can be controlled simultaneously and repeatedly using a common process control device, contributing to improved productivity of products using this type of device. The effect of doing so is extremely large.

Although the preferred embodiments of the device of the present invention have been described above, it goes without saying that various design changes can be made without departing from the spirit of the present invention.

[Brief explanation of the drawing]

Figure 1 is a characteristic line diagram showing the relationship between the thickness of the semiconductor vapor phase grown layer and the amount of source gas, Figure 2 is a characteristic line diagram showing the relationship between the resistivity of the semiconductor vapor phase grown layer and the amount of dopant gas. 3 is a characteristic diagram of thickness that changes depending on the number of batches, FIG. 4 is a characteristic diagram of resistivity that changes depending on the number of batches, and FIG. 6 is a sectional view of the main parts showing the structure of the phase growth apparatus, FIG. 6 is a piping system diagram of the gas supply system of the semiconductor vapor phase growth apparatus shown in FIG. 5, and FIG. 7 is a diagram for controlling the gas supply system shown in FIG. 6. A system diagram of the control system, FIG. 8 is an explanatory diagram showing an example of a process program executed by the process control device provided in the control system shown in FIG. 7, and FIG. FIG. 10 is a format diagram showing the basic configuration of a sequence program according to the present invention, FIG. 10 is a format diagram of a thickness data table stored in a process control device according to the present invention, and FIG. FIG. 12 is a format diagram of the data table; FIG. 12 is a flowchart for inputting thickness data to create a required process program by inputting it into the process control device according to the present invention; FIG.
The figure is a flowchart for inputting resistivity data to the process control device according to the present invention to create a required process program.
A flowchart diagram for creating a predetermined process program from thickness data and resistivity data input based on the input flowcharts shown in Figures 2 and 13, and Figure 15 is a data table of inter-batch thickness correction values. Format diagram showing 1st
FIG. 6 is a format diagram showing a data table of inter-batch resistivity correction values, and FIG. 17 is a flowchart for performing inter-batch correction of a process program. 10...Bottom plate, 12...Pipeline, 14...Inlet, 16...Blowhole, 18...Susceptor, 20...
... Rotating member, 22 ... Motor with reducer, 24 ...
Cover, 26... Induction heating coil, 28... Insulating plate, 30... Bolt, 32, 34... Connection joint, 36... Ceiling cover, 38... Quartz layer, 40...
1st stainless steel layer, 42... 2nd stainless steel layer,
44...Flange, 46...Clamp member, 48
...Air cylinder device, 50...Wafer, 52...
...Observation window, 54...Sensor, 56...Temperature detection window, 58...Bracket, 60, 62, 64, 6
6, 68... Gas chamber, 70... Bubbling chamber, 72... Process control device, 74...
D/A converter, 76...analog multiplexer, 78...A/D converter.

Claims (1)

[Scope of Claims] 1. A reactor for performing vapor phase growth on a substrate such as silicon, means for heating the substrate, and pipes connecting the reactor and various gas sources necessary for vapor phase growth. A furnace network, a valve device installed on the tube furnace network to guide desired amounts of various gases into the reactor, and a sequence time for specifying the vapor phase growth process in the furnace, the gases to be used, and the like. It has a sequence program that stores information regarding flow rate and temperature as parameter data, and controls ON/OFF of the valve device.
A process control device for a semiconductor vapor phase growth apparatus comprising a signal for controlling the opening degree of the heating means and a process control means for giving a signal for controlling the heating means, the vapor phase growth layer changing with each batch operation. Data on the inter-batch thickness correction value obtained from the correlation between the thickness of a memory storing at least one data of the inter-batch resistivity correction value data obtained from the process;
1. A process control device for a semiconductor vapor phase growth apparatus, comprising: a process program correction means for correcting the process program so as to approximate the process program. 2. The process control device for a semiconductor vapor phase growth apparatus according to claim 1, wherein a sequence time correction value is used as the data for the inter-batch thickness correction value. 3. The process control device for a semiconductor vapor phase growth apparatus according to claim 1, wherein a gas flow rate correction value is used as the data for the inter-batch resistivity correction value.