JPH0572095B2 - - Google Patents
Info
- Publication number
- JPH0572095B2 JPH0572095B2 JP57098084A JP9808482A JPH0572095B2 JP H0572095 B2 JPH0572095 B2 JP H0572095B2 JP 57098084 A JP57098084 A JP 57098084A JP 9808482 A JP9808482 A JP 9808482A JP H0572095 B2 JPH0572095 B2 JP H0572095B2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- temperature
- raw material
- buffer chamber
- beam source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
本発明は、−族化合物半導体あるいはその
混晶半導体の分子線結晶成長装置に用いる分子線
源、特に族元素原料蒸発用分子線源に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a molecular beam source used in a molecular beam crystal growth apparatus for -group compound semiconductors or their mixed crystal semiconductors, and particularly to a molecular beam source for evaporating group element raw materials.
−族化合物あるいはその混晶の分子線結晶
成長技術は超高速半導体デバイス、オプトエレク
トロニクスデバイスや超格子素子デバイスを実現
する上で重要な技術となりつつある。特に成長層
厚の制御性が原子層オーダのレベルで可能であ
り、他のエピタキシヤル技術では非常に困難な極
めて薄い膜の制御が可能である。 Molecular beam crystal growth technology for - group compounds or their mixed crystals is becoming an important technology for realizing ultrahigh-speed semiconductor devices, optoelectronic devices, and superlattice device devices. In particular, it is possible to control the thickness of the grown layer on the order of atomic layers, and it is possible to control extremely thin films, which is extremely difficult with other epitaxial techniques.
しかしながら、成長層表面の鏡面性において次
に述べるような問題があり、その解決が望まれて
いる。すなわち、GaAsのエピタキシヤル層を例
にとると、規定の高真空、蒸発速度、成長温度で
行なつても、しばしば成長層表面に微少な凹凸が
発生し、少ない時で濃度103個／cm2、多い時で105
個／cm2以上にもなる。このような表面を顕微鏡で
観察してみると、粒状の微少凸起である場合があ
り通常ピツチング（Pitting）と呼んでいる。 However, there are problems with the specularity of the surface of the grown layer, as described below, and a solution to these problems is desired. In other words, if we take a GaAs epitaxial layer as an example, even if growth is performed at a specified high vacuum, evaporation rate, and growth temperature, minute irregularities often occur on the surface of the grown layer, and in some cases, the concentration is 10 3 particles/cm. 2 , at most 10 5
pcs/ cm2 or more. When such a surface is observed under a microscope, it can be seen that there are minute granular protrusions, which are usually called pitting.
ピツチングが生じていると、エピタキシヤル層
の特性、例えばキヤリア濃度分布の急峻性、キヤ
リア移動度あるいはホトルミネツセンス強度など
において優秀なものであつても、デバイス作製工
程上障害となり、良好なデバイスを実現できな
い。特に極微細パターン加工を必要とする超高速
デバイスの製作が困難となる。 If pitting occurs, even if the epitaxial layer has excellent properties, such as the steepness of the carrier concentration distribution, carrier mobility, or photoluminescence intensity, it will become a hindrance in the device fabrication process, resulting in the failure of a good device. cannot be realized. In particular, it becomes difficult to manufacture ultra-high-speed devices that require extremely fine pattern processing.
ピツチングが生じる原因にはいろいろな説があ
り、残留酸素の影響であるとか、残留酸化膜の存
在のためとか、あるいは蒸発源からの分子線強度
の時間的あるいは空間的むらのためであるとか言
われており、一部改善されたケースもあるが、依
然としてかなりの頻度で発生し、その根本的解決
が強く望まれている。 There are various theories as to why pitting occurs, including the influence of residual oxygen, the presence of a residual oxide film, or temporal or spatial unevenness in the molecular beam intensity from the evaporation source. Although there have been some cases where this problem has been improved, it still occurs quite frequently, and a fundamental solution is strongly desired.
本発明はこのようなピツチングを軽減もしくは
皆無とすることを目的とした新規な分子線源を提
供することにある。 The object of the present invention is to provide a novel molecular beam source that aims to reduce or eliminate such pitting.
本発明によれば、−族化合物半導体あるい
はその混晶半導体の分子線結晶成長装置に用いる
分子線源であつて、貯蔵される族元素原料から
蒸発する金属蒸気が基板表面に向かう前に少なく
とも１回衝突するように配置された遮蔽板あるい
は遮蔽治具を内部に持つ分子線緩衝室を有し、蒸
発温度と該緩衝室の温度を個々に制御することに
よつて分子線強度を制御する手段を有する分子線
源が得られる。 According to the present invention, in a molecular beam source used in a molecular beam crystal growth apparatus for a - group compound semiconductor or a mixed crystal semiconductor thereof, metal vapor evaporated from a stored group element raw material flows at least once before heading toward the substrate surface. A means for controlling the molecular beam intensity by individually controlling the evaporation temperature and the temperature of the buffer chamber, which has a molecular beam buffer chamber having a shielding plate or a shielding jig therein arranged to collide twice. A molecular beam source having the following properties is obtained.
以下、本発明を実施例について説明する。 Hereinafter, the present invention will be explained with reference to examples.
図は本発明の一実施例の断面図を示すものであ
る。原料となる族金属１は、蒸発温度では液体
となりPBNからなるルツボ２に貯蔵され、加熱
ヒータ３で設定温度に加熱されている。この部分
は温度制御用熱電対４にて一定温度に制御されて
いる。原料金属１から蒸発した金属蒸気５は出口
６に向つて拡散し、分子線緩衝室７に進入する。
この蒸気は第１遮蔽板８と第２遮蔽治具９と最低
１回衝突してからでないと出口６から出ることは
ない。 The figure shows a sectional view of an embodiment of the invention. Group metal 1, which is a raw material, becomes a liquid at the evaporation temperature and is stored in a crucible 2 made of PBN, and heated to a set temperature by a heater 3. This portion is controlled at a constant temperature by a temperature control thermocouple 4. Metal vapor 5 evaporated from raw metal 1 diffuses toward outlet 6 and enters molecular beam buffer chamber 7 .
This steam does not exit from the outlet 6 until it collides with the first shielding plate 8 and the second shielding jig 9 at least once.
すなわち、原料１が貯蔵ルツボ２の中にある限
り、その量によらず原料表面のいかなる部分から
も出口６が見通せない。 That is, as long as the raw material 1 is in the storage crucible 2, the outlet 6 cannot be seen from any part of the raw material surface regardless of the amount.
このような構造であると、原料金属の突沸その
他の原因で発生したクラスター状原子団塊１０は
一旦必らず遮蔽板８あるいは９に衝突する。つま
り、この遮蔽板８あるいは９を緩衝室内に設ける
ことによつて、衝突の可能性は大きく向上し、壁
面との衝突によつても完全に分解不可能なクラス
ターの運動エネルギーを失活させることも可能と
なる。大部分のクラスターは繰り返し衝突によつ
て分解が進行し、出射時にはその大半が原子線あ
るいは分子線となり、基板表面にクラスター状原
子団塊の形で衝突する可能性が極めて低減され
る。 With such a structure, the cluster-like atomic aggregates 10 generated due to bumping of the raw metal or other causes always collide with the shielding plate 8 or 9 once. In other words, by providing this shielding plate 8 or 9 in the buffer chamber, the possibility of collision is greatly improved, and the kinetic energy of the cluster, which cannot be completely decomposed even by collision with a wall surface, is deactivated. is also possible. Most of the clusters are decomposed by repeated collisions, and when emitted, most of them become atomic beams or molecular beams, and the possibility of colliding with the substrate surface in the form of cluster-like atomic aggregates is extremely reduced.
また原料金属表面からの蒸発に部分的むらが生
じたとしても、緩衝室７を通過する間に均一化さ
れ出口６から出射する。このため成長層の膜厚、
組成あるいは不純物濃度の均一性が改善される。 Furthermore, even if there is partial unevenness in the evaporation from the surface of the raw metal, it becomes uniform while passing through the buffer chamber 7 and is emitted from the outlet 6. Therefore, the thickness of the growth layer,
Uniformity of composition or impurity concentration is improved.
緩衝室７の空間の温度は熱電対１２と加熱ヒー
タ１３で制御される。この温度は原料温度より高
く設定する場合も低く設定する場合もある。高い
場合は出口から出射される分子線強度は原料温度
で決定されるが、低い場合は、緩衝室壁面に蒸気
からの凝縮が起こる可能性があるから、蒸発量は
緩衝室温度が変調される。凝縮した原料液体は重
力によつて原料貯蔵部に戻り再び原料として利用
される。 The temperature of the buffer chamber 7 is controlled by a thermocouple 12 and a heater 13. This temperature may be set higher or lower than the raw material temperature. If it is high, the molecular beam intensity emitted from the outlet is determined by the raw material temperature, but if it is low, there is a possibility that condensation from the vapor will occur on the wall of the buffer chamber, so the amount of evaporation will be modulated by the buffer chamber temperature. . The condensed raw material liquid returns to the raw material storage section by gravity and is used again as a raw material.
実施例 １
図に示す構造の分子線源を液体窒素シユラウド
付の通常の分子線成長装置の分子線源設置部に挿
入した。Example 1 A molecular beam source having the structure shown in the figure was inserted into the molecular beam source installation part of a conventional molecular beam growth apparatus equipped with a liquid nitrogen shroud.
この分子線源の中にガリウムを入れ、他の分子
線源に砒素を入れ砒化ガリウムのエピタキシヤル
成長を行なつた。ガリウム貯蔵部温度を1000℃、
分子線緩衝室温度を1050℃とした。砒素保持温度
は350℃、基板温度は650℃に設定した。不純物は
意図的にはドープしなかつた。この条件で、クロ
ムドープ（100）砒化ガリウム基板の上に約２ミ
クロンのエピタキシヤル成長層を得た。干渉顕微
鏡写真による成長層表面を観察した結果、用いた
約４cm2の基板全面で約20〜50個の微少凹凸が存在
するだけであとは極めて良好な鏡面状態であるこ
とが判つた。 Gallium was placed in this molecular beam source, and arsenic was placed in the other molecular beam source to perform epitaxial growth of gallium arsenide. Gallium storage temperature 1000℃,
The temperature of the molecular beam buffer chamber was 1050°C. The arsenic holding temperature was set at 350°C, and the substrate temperature was set at 650°C. No impurities were intentionally doped. Under these conditions, an epitaxial growth layer of approximately 2 microns was obtained on a chromium-doped (100) gallium arsenide substrate. As a result of observing the surface of the grown layer using interference micrographs, it was found that only about 20 to 50 minute irregularities were present over the entire surface of the substrate of about 4 cm 2 used, and the rest was in an extremely good mirror-like state.
本発明によると、以上説明したようにピツチン
グを軽減もしくは皆無とした分子線源が得られ
る。 According to the present invention, as explained above, a molecular beam source with reduced or no pitting can be obtained.
図には本発明の分子線源の一実施例の断面図を
示す。
１……族元素原料、２……族元素原料貯蔵
ルツボ、３……族原料貯蔵部加熱ヒータ、４…
…族元素原料温度制御モニタ用熱電対、５……
族元素原料蒸気、６……分子線源出口部、７…
…分子線緩衝室、８……遮蔽板、９……遮蔽治
具、１０……クラスター状原子団塊、１１……熱
遮蔽カバー、１２……分子線緩衝室内温度制御モ
ニタ用熱電対、１３……分子線緩衝室加熱ヒータ
を示す。
The figure shows a sectional view of an embodiment of the molecular beam source of the present invention. 1...Group element raw material, 2...Group element raw material storage crucible, 3...Group raw material storage section heater, 4...
...Thermocouple for group element raw material temperature control monitor, 5...
Group element raw material vapor, 6... Molecular beam source outlet section, 7...
... Molecular beam buffer chamber, 8 ... Shielding plate, 9 ... Shielding jig, 10 ... Clustered atomic aggregate, 11 ... Heat shielding cover, 12 ... Thermocouple for temperature control monitor in molecular beam buffer room, 13 ... ... Shows a molecular beam buffer chamber heater.
Claims (1)
体の分子線源であつて、貯蔵される族元素原料
から蒸発する金属蒸気が基板表面に向かう前に少
なくとも１回衝突するように配置された遮蔽板あ
るいは遮蔽治具を内部に持つ分子線緩衝室を有
し、蒸発温度と該緩衝室の温度を個々に制御する
ことによつて分子線強度を制御する手段を有する
ことを特徴とする分子線源。A shielding plate or shield that is a molecular beam source of a 1-group compound semiconductor or its mixed crystal semiconductor and is arranged so that the metal vapor evaporated from the stored group element raw material collides with it at least once before heading toward the substrate surface. A molecular beam source comprising a molecular beam buffer chamber having a jig therein, and means for controlling molecular beam intensity by individually controlling the evaporation temperature and the temperature of the buffer chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57098084A JPS58215021A (en) | 1982-06-08 | 1982-06-08 | Molecular beam source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57098084A JPS58215021A (en) | 1982-06-08 | 1982-06-08 | Molecular beam source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58215021A JPS58215021A (en) | 1983-12-14 |
| JPH0572095B2 true JPH0572095B2 (en) | 1993-10-08 |
Family
ID=14210474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57098084A Granted JPS58215021A (en) | 1982-06-08 | 1982-06-08 | Molecular beam source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58215021A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115219A (en) * | 1983-11-26 | 1985-06-21 | Anelva Corp | Vaporization source cell for thin film forming apparatus |
| FR2572099B1 (en) * | 1984-10-24 | 1987-03-20 | Comp Generale Electricite | THERMAL CRACKING MOLECULAR JET GENERATOR FOR THE MANUFACTURE OF SEMICONDUCTORS BY EPITAXIAL DEPOSITION |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5461464A (en) * | 1977-10-25 | 1979-05-17 | Fujitsu Ltd | Hot wall epitaxial growing unit |
| JPS5759127Y2 (en) * | 1978-09-26 | 1982-12-17 |
-
1982
- 1982-06-08 JP JP57098084A patent/JPS58215021A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58215021A (en) | 1983-12-14 |
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