JPH0573826B2 - - Google Patents
Info
- Publication number
- JPH0573826B2 JPH0573826B2 JP58176666A JP17666683A JPH0573826B2 JP H0573826 B2 JPH0573826 B2 JP H0573826B2 JP 58176666 A JP58176666 A JP 58176666A JP 17666683 A JP17666683 A JP 17666683A JP H0573826 B2 JPH0573826 B2 JP H0573826B2
- Authority
- JP
- Japan
- Prior art keywords
- dust
- vacuum chamber
- clean gas
- vacuum
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
この発明は、蒸着装置やCVD装置等として利
用可能な真空成膜装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a vacuum film forming apparatus that can be used as a vapor deposition apparatus, a CVD apparatus, or the like.
(ロ) 従来技術
一般に、真空室内の真空排気を開始すると、室
内の空気が急に排出されるため、気流が発生し、
室内の塵埃が舞い上がる。このような塵埃の一部
は室内の空気等と一緒に排出されるが、排気が進
行するにつれ気流が減少するので、多くの浮遊塵
埃は排出されるに必要な運動量を得られなくなり
室内に残留する。したがつて、従来の方法によれ
ば、真空室内の塵埃を充分排出できないため、蒸
着装置における膜生成等に悪影響を与えるという
欠点がある。(B) Prior art Generally, when evacuation in a vacuum chamber is started, the air in the room is suddenly exhausted, creating an air current.
Dust rises in the room. Some of this dust is exhausted together with the indoor air, but as the exhaust progresses, the airflow decreases, so much of the floating dust cannot gain the momentum necessary to be expelled and remains indoors. do. Therefore, according to the conventional method, the dust in the vacuum chamber cannot be sufficiently discharged, which has the drawback of adversely affecting film formation in the vapor deposition apparatus.
(ハ) 目的
この発明は、真空室内の塵埃を充分排出し得る
真空成膜装置の塵埃除去方法を提供することを目
的としている。(C) Purpose The purpose of the present invention is to provide a method for removing dust from a vacuum film forming apparatus, which can sufficiently exhaust dust from a vacuum chamber.
(ニ) 構成
この発明に係る真空成膜装置は、真空室と、真
空室に噴出させる清浄気体を蓄えておく清浄気体
溜と、清浄気体溜からバルブを介して清浄気体を
真空室内に導入する配管と、真空室に開口し主排
気系とは別個に設けられて塵埃を排気する塵埃排
気管を具備しており、かつ前記配管により清浄気
体の一部をワークの表面に吹きつけ得るようにし
たことを特徴としている。(d) Configuration The vacuum film forming apparatus according to the present invention includes a vacuum chamber, a clean gas reservoir for storing clean gas to be ejected into the vacuum chamber, and a clean gas reservoir for introducing clean gas into the vacuum chamber through a valve. It is equipped with piping and a dust exhaust pipe that opens into the vacuum chamber and is provided separately from the main exhaust system to exhaust dust, and is configured so that a part of the clean gas can be blown onto the surface of the workpiece through the piping. It is characterized by what it did.
(ホ) 実施例
第１図はこの発明にかかる真空成膜装置の一実
施例を説明するための図であつて、蒸着装置の概
略構成図である。(E) Embodiment FIG. 1 is a diagram for explaining an embodiment of the vacuum film forming apparatus according to the present invention, and is a schematic configuration diagram of the vapor deposition apparatus.
同図において、１は真空室であり、この真空室
１には例えば、被蒸着物であるワーク２及び蒸着
源３が配設されている。４はベースプレート、５
はベースプレート４に設けられる主排気管であつ
て、この主排気管５にはバルブ６が取りつけられ
ている。 In the figure, 1 is a vacuum chamber, and in this vacuum chamber 1, for example, a workpiece 2 as an object to be deposited and a deposition source 3 are arranged. 4 is the base plate, 5
is a main exhaust pipe provided on the base plate 4, and a valve 6 is attached to this main exhaust pipe 5.
７は真空室１に噴出させる清浄気体を蓄えてお
く清浄気体溜、８は清浄気体溜７から流出した気
体中の異物等を取り除くためのフイルタ、９はバ
ルブ、１０は清浄気体を真空室１内に導入するた
めの配管であつて、配管１０は真空室１内の例え
ば、二個所で開口している。開口１１はワーク面
に清浄気体を吹きつけるために、開口１２は真空
室１全体に清浄気体を行きわたらせるためにそれ
ぞれ設けられる。 7 is a clean gas reservoir for storing clean gas to be ejected into the vacuum chamber 1; 8 is a filter for removing foreign substances from the gas flowing out from the clean gas reservoir 7; 9 is a valve; 10 is a reservoir for storing clean gas to be ejected into the vacuum chamber 1 The pipe 10 is opened at, for example, two locations within the vacuum chamber 1. The opening 11 is provided for blowing clean gas onto the work surface, and the opening 12 is provided for distributing the clean gas throughout the vacuum chamber 1.
１３は主排気系とは別個に設けた塵埃排気管で
ある。 13 is a dust exhaust pipe provided separately from the main exhaust system.
次に上述した構成を備えた実施例の動作につい
て説明する。 Next, the operation of the embodiment having the above-described configuration will be explained.
ワーク２等セツトされた後、バルブ１４を開い
て真空室１を大気圧から10-1torr程度まで低真空
排気を行う。この低真空排気中は真空室１の内部
では気流が発生して室内の塵埃が舞い上がつてお
り、この舞い上がつた塵埃の殆どは室内の空気と
ともに塵埃排気管１３から排気される。しかし排
気が進行するにつれて気流が減少するので、塵埃
は排出されるに必要な運動量が得られなくなり、
室内に残留し、やがて落下して真空室１の内壁、
ワーク２の表面、蒸着源３の表面、ベースプレー
ト４あるいは主排気管５の開口部付近等各所に付
着する。 After the workpiece 2 is set, the valve 14 is opened to evacuate the vacuum chamber 1 from atmospheric pressure to about 10 -1 torr. During this low vacuum evacuation, an air current is generated inside the vacuum chamber 1, causing dust in the room to fly up, and most of the dust raised up is exhausted from the dust exhaust pipe 13 along with the air in the room. However, as the exhaust progresses, the airflow decreases, and the dust no longer gains the momentum it needs to be exhausted.
It remains in the room and eventually falls, damaging the inner wall of vacuum chamber 1.
It adheres to various places such as the surface of the workpiece 2, the surface of the vapor deposition source 3, the base plate 4, or the vicinity of the opening of the main exhaust pipe 5.
上記のようにして10-1torr程度まで低真空にし
た状態で、バルブ９を開いて、清浄気体溜７から
清浄気体を真空室１内に導入する。このときの清
浄気体の圧力は塵埃を輸送するに足る運動量の気
流を発生する程度でよく、例えば10torr前後の圧
力で充分である。また、清浄気体は真空室１内の
容積の２倍あるいはこれ以上の流量（換言すれ
ば、真空室内の気体を２回あるいはそれ以上に入
れ換える流量）であることが望ましい。 With the vacuum reduced to a low level of about 10 -1 torr as described above, the valve 9 is opened to introduce clean gas from the clean gas reservoir 7 into the vacuum chamber 1 . The pressure of the clean gas at this time is sufficient to generate an air flow with sufficient momentum to transport the dust, and for example, a pressure of about 10 torr is sufficient. Further, it is desirable that the flow rate of the clean gas is twice or more than the volume of the vacuum chamber 1 (in other words, the flow rate is such that the gas in the vacuum chamber is replaced twice or more).
この清浄気体の導入によつて、開口１１および
１２から清浄気体が噴出される結果、前記各所に
付着した塵埃、特にワーク２の表面に付着した塵
埃がワーク２の表面から離れて浮遊する。 By introducing the clean gas, the clean gas is blown out from the openings 11 and 12, and as a result, the dust adhering to the various places, especially the dust adhering to the surface of the workpiece 2, floats away from the surface of the workpiece 2.
この浮遊した塵埃は塵埃排気管１３が図外の排
気ポンプ（低真空排気ポンプ）に接続しているか
ら、塵埃排気管１３から真空室外に強制的に排出
され、最終的には真空室内の塵埃は殆ど除去され
る。つぎに主排気系に切り換えるのであるが、そ
の際に室内の圧力と主排気系内の圧力では圧力差
があるので、切り換えた途端に主排気系の開口付
近に局所的に気流が発生する。このときもしも主
排気管５付近に塵埃が残留しておれば、その塵埃
が真空室内に舞い上がるいわゆる逆流現象が発生
するのであるが、前述の清浄気体導入と主排気系
とは別に設けた塵埃排気管１３による排出の結
果、主排気管５付近には塵埃が付着していないの
で、舞い上がりは発生しない。 Since the dust exhaust pipe 13 is connected to an exhaust pump (low vacuum exhaust pump) not shown, this floating dust is forcibly discharged from the dust exhaust pipe 13 to the outside of the vacuum chamber, and eventually becomes dust inside the vacuum chamber. are almost completely removed. Next, the switch is made to the main exhaust system, but at that time there is a pressure difference between the pressure inside the room and the pressure inside the main exhaust system, so as soon as the switch is made, a local airflow is generated near the opening of the main exhaust system. . At this time, if dust remains near the main exhaust pipe 5, the dust will fly up into the vacuum chamber, causing a so-called backflow phenomenon. As a result of the exhaust through the pipe 13, no dust is attached to the vicinity of the main exhaust pipe 5, so no dust is raised.
その後、真空室１内は成膜に必要な高真空に排
気される。 Thereafter, the inside of the vacuum chamber 1 is evacuated to a high vacuum necessary for film formation.
第２図はこの発明の他の実施例であつて、いわ
ゆるインライン型装置への適用例を示した説明図
である。 FIG. 2 is another embodiment of the present invention, and is an explanatory diagram showing an example of application to a so-called in-line type device.
同図において、第１図と同一部分は同一符合で
示している。この装置は、バルブ２４及び２５を
介して連設される真空室としての試料挿入室２１
とプロセス室２２、および試料取出室２３を備え
ている。２６は試料を挿入するためのドア、２７
は試料を取り出すためのドア、２８及び２９は矢
印方向に移行するワーク、３６は蒸発源をそれぞ
れ示している。 In this figure, the same parts as in FIG. 1 are indicated by the same reference numerals. This device includes a sample insertion chamber 21 as a vacuum chamber connected via valves 24 and 25.
, a process chamber 22 , and a sample extraction chamber 23 . 26 is a door for inserting the sample, 27
28 and 29 are workpieces moving in the direction of the arrow, and 36 is an evaporation source, respectively.
試料挿入室２１及びプロセス室２２には、第１
図に示した蒸着装置と同様の主排気管３０，３１
及び塵埃排気管３２，３３がバルブを介してそれ
ぞれ接続されている。 The sample insertion chamber 21 and the process chamber 22 include a first
Main exhaust pipes 30, 31 similar to the vapor deposition apparatus shown in the figure
and dust exhaust pipes 32 and 33 are connected to each other via valves.
また、各室２１，２２には、清浄気体を導入す
るための配管３４及び３５が設けられている。特
に、配管３５はワーク２９の表面に向かつて開口
している。 Further, each chamber 21, 22 is provided with pipes 34 and 35 for introducing clean gas. In particular, the pipe 35 is open toward the surface of the workpiece 29.
しかして、第１図で説明したと同様に、配管３
４及び３５により各室２１及び２２に噴出された
清浄気体により、室内の塵埃は各塵埃排気管３
２，３３より強制排出される。 Therefore, as explained in Fig. 1, the piping 3
4 and 35 into each chamber 21 and 22, the dust in the room is removed from each dust exhaust pipe 3.
It is forcibly discharged from 2,33.
第３図は上述した実施例によつた場合の塵埃量
の経時変化の状態をしめした説明図である。 FIG. 3 is an explanatory diagram showing how the amount of dust changes over time in the case of the above-described embodiment.
同図ａの実線は、真空室内に清浄気体を噴出し
た場合、破線は清浄気体を噴出させない場合の真
空室内の塵埃量の経時変化をそれぞれ示す。ま
た、同図ａの一点鎖線は清浄気体を噴出させた場
合、二点鎖線は清浄空気を噴出させない場合の真
空室内の圧力変化をそれぞれ示している。図中、
ＡおよびＢ点は、清浄気体の噴出時点を示してい
る。同図ａより明らかなように、清浄気体の噴出
により、真空室内の塵埃量は、気体を噴出させな
いときに比較して著しく少なくなる。 The solid line in the figure a shows the change over time in the amount of dust in the vacuum chamber when clean gas is ejected into the vacuum chamber, and the broken line shows the change over time in the amount of dust in the vacuum chamber when clean gas is not ejected. In addition, the dashed-dotted line in FIG. 1A shows the pressure change in the vacuum chamber when clean gas is ejected, and the dashed-double line shows the pressure change in the vacuum chamber when clean air is not ejected. In the figure,
Points A and B indicate the point at which clean gas is blown out. As is clear from Figure a, the amount of dust in the vacuum chamber is significantly reduced due to the jetting of clean gas compared to when no gas is jetted out.
一方、同図ｂは、真空室内に噴出する清浄気体
の流量に対応した塵埃量の減少変化を示してい
る。同図より、清浄気体導入後、一定時間を経過
すると残留塵埃量は一定になり、この残留塵埃量
は流入気体流量が多い程、減少することが判る。 On the other hand, FIG. 5b shows a decrease in the amount of dust corresponding to the flow rate of clean gas ejected into the vacuum chamber. From the figure, it can be seen that the amount of residual dust becomes constant after a certain period of time has passed after the introduction of clean gas, and the amount of residual dust decreases as the flow rate of the inflowing gas increases.
なお、この発明の実施にあたり、清浄気体噴出
口での急冷却防止機構、気体導入時のパルス的な
流量調節、あるいは、気体噴出口の寸法、形状、
数量及び配置位置等は実施される蒸着装置等に応
じて適宜に付設、あるいは設定されうるものであ
る。 In carrying out the present invention, a mechanism for preventing rapid cooling at the clean gas nozzle, a pulsed flow rate adjustment when introducing gas, or a size, shape, etc. of the gas nozzle,
The quantity, arrangement position, etc. can be added or set as appropriate depending on the vapor deposition apparatus etc. to be implemented.
また、実施例では、一個の開口部からワークに
向けて清浄気体を噴出するとして説明した。しか
し、これは、たとえば、配管をワーク周囲に配設
し、該配管に複数の開口を中心部（ワーク表面）
に向かうように設け、この複数の開口から清浄気
体を噴出させるものであつてもよい。 Furthermore, in the embodiment, the explanation has been made assuming that clean gas is spouted toward the workpiece from one opening. However, this method requires, for example, installing piping around the workpiece and opening multiple openings in the piping at the center (on the workpiece surface).
The plurality of openings may be provided so as to be directed toward the openings, and clean gas may be jetted out from the plurality of openings.
なお本発明は蒸着装置のみでなく、例えば
CVD装置等他の種類の成膜装置にも適用できる。 Note that the present invention is applicable not only to vapor deposition equipment, but also to e.g.
It can also be applied to other types of film forming equipment such as CVD equipment.
(ヘ) 効果
この発明に係る真空成膜装置の塵埃除去方法
は、真空室内の真空排気にさいして、清浄気体で
もつて真空室内の塵埃を強制的に排出し、しかる
のちに、真空内を真空排気するものであるから、
真空室内の塵埃を充分排出することができる。し
たがつて、この発明によれば各種の膜形成におい
て塵埃の悪影響を少なくできる。(F) Effect The method for removing dust from a vacuum film forming apparatus according to the present invention forcibly exhausts dust in the vacuum chamber using clean gas when evacuation is performed in the vacuum chamber, and then evacuates the vacuum chamber. Because it exhausts
Dust in the vacuum chamber can be sufficiently discharged. Therefore, according to the present invention, the adverse effects of dust can be reduced in forming various films.
特にこの発明に係る真空成膜装置では、主排気
系とは別個に塵埃排気管を設けてあるので、主排
気系からの塵埃の逆流が防止できる効果がある。 In particular, in the vacuum film forming apparatus according to the present invention, since the dust exhaust pipe is provided separately from the main exhaust system, there is an effect that backflow of dust from the main exhaust system can be prevented.
第１図はこの発明にかかる真空成膜装置の一実
施例を説明するための図であつて、蒸着装置の概
略構成図、第２図はこの発明の他の実施例であつ
て、いわゆるインライン型装置への適用例を示し
た説明図、第３図は上述した実施例によつた場合
の塵埃量の経時変化の状態を示した説明図であ
る。
１……真空室、２……ワーク、３……蒸着源、
５……主排気管、７……清浄気体溜、８……フイ
ルタ、１０……配管、１１，１２……開口、１３
……塵埃排気管。
FIG. 1 is a diagram for explaining one embodiment of a vacuum film forming apparatus according to the present invention, and is a schematic configuration diagram of the vapor deposition apparatus, and FIG. FIG. 3 is an explanatory diagram showing an example of application to a molding device, and FIG. 3 is an explanatory diagram showing how the amount of dust changes over time in the case of the above-mentioned embodiment. 1... Vacuum chamber, 2... Workpiece, 3... Evaporation source,
5... Main exhaust pipe, 7... Clean gas reservoir, 8... Filter, 10... Piping, 11, 12... Opening, 13
...Dust exhaust pipe.
Claims (1)
えておく清浄気体溜と、清浄気体溜からバルブを
介して清浄気体を真空室内に導入する配管と、真
空室に開口し主排気系とは別個に設けられて塵埃
を排気する塵埃排気管を具備しており、かつ前記
配管により清浄気体の一部をワークの表面に吹き
つけ得るようにしたことを特徴とする真空成膜装
置。1. What is a vacuum chamber, a clean gas reservoir that stores clean gas to be ejected into the vacuum chamber, piping that introduces clean gas from the clean gas reservoir into the vacuum chamber via a valve, and a main exhaust system that opens into the vacuum chamber? 1. A vacuum film forming apparatus comprising a separate dust exhaust pipe for exhausting dust, and a part of the clean gas can be blown onto the surface of a workpiece through the pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17666683A JPS6067664A (en) | 1983-09-24 | 1983-09-24 | Dust removal of vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17666683A JPS6067664A (en) | 1983-09-24 | 1983-09-24 | Dust removal of vapor deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6067664A JPS6067664A (en) | 1985-04-18 |
| JPH0573826B2 true JPH0573826B2 (en) | 1993-10-15 |
Family
ID=16017580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17666683A Granted JPS6067664A (en) | 1983-09-24 | 1983-09-24 | Dust removal of vapor deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6067664A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62205268A (en) * | 1986-03-04 | 1987-09-09 | Ulvac Corp | Device for cleaning vacuum treatment tank |
| JPH03219069A (en) * | 1990-01-24 | 1991-09-26 | Mitsubishi Kasei Corp | Method for cleaning vacuum vessel |
| JP3838878B2 (en) | 2000-04-28 | 2006-10-25 | 松下電器産業株式会社 | Battery electrode plate and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS591677A (en) * | 1982-06-29 | 1984-01-07 | Citizen Watch Co Ltd | Ion plating device |
-
1983
- 1983-09-24 JP JP17666683A patent/JPS6067664A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6067664A (en) | 1985-04-18 |
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