JPH0576155B2 - - Google Patents
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- Publication number
- JPH0576155B2 JPH0576155B2 JP62293326A JP29332687A JPH0576155B2 JP H0576155 B2 JPH0576155 B2 JP H0576155B2 JP 62293326 A JP62293326 A JP 62293326A JP 29332687 A JP29332687 A JP 29332687A JP H0576155 B2 JPH0576155 B2 JP H0576155B2
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- Prior art keywords
- film
- auxiliary metal
- metal film
- transparent conductive
- panel
- Prior art date
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄膜EL表示パネルに係わり、特に透
明電極ラインを低抵抗化したパネル構造に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film EL display panel, and particularly to a panel structure in which the resistance of transparent electrode lines is reduced.
蛍光体物質に電圧を印加することにより発光さ
せる、いわゆるエレクトロルミネセンス（EL）
が1936年に発見されて以来、面光源や表示装置へ
の応用を目的として多くの研究開発が行われてき
た。その間、種々の素子構造が検討されたが、現
在ではZnS：Mn等の薄膜発光層を使用した交流
駆動の薄膜EL素子が発光輝度特性、安定性に優
れ、各種の表示装置として実用に共されている。
So-called electroluminescence (EL), which emits light by applying voltage to a phosphor material
Since its discovery in 1936, much research and development has been conducted with the aim of applying it to surface light sources and display devices. During that time, various device structures were studied, and currently, AC-driven thin-film EL devices using a thin-film light-emitting layer such as ZnS:Mn have excellent luminance characteristics and stability, and are now in practical use as various display devices. ing.
第４図に代表的なEL素子として刊行物「エ
ス・アイ・デイ・74・ダイジエスト・オブ・テク
ニクカル・ペーパーズ（SID 74 digest of
technical papers）」の84頁に発表された２重絶
縁型薄膜EL素子の断面図を示す。この２種絶縁
型薄膜EL素子は、ガラス基板４１上に透明電極
４２、第１絶縁層４３、発光層４４、第２絶縁層
４５、背面電極４６が順次積層された素子構造を
有している。第１及び第２絶縁層４３，４５とし
ては、Y2O3、Ta2O5、Si3N4、SiO2、BaTiO3、
SrTiO3、Al2O3等の絶縁体薄膜が真空蒸着やスパ
ツタ、プラズマCVD法により形成される。また、
発光層４４としては黄橙色に発光するZnS：Mn
が最も高い輝度であり、一般的に使用されてい
る。 Figure 4 shows a typical EL element in the publication "SID 74 Digest of Technical Papers".
A cross-sectional view of a double-insulated thin-film EL device published on page 84 of ``Technical Papers'' is shown. This two-type insulation type thin film EL element has an element structure in which a transparent electrode 42, a first insulating layer 43, a light emitting layer 44, a second insulating layer 45, and a back electrode 46 are sequentially laminated on a glass substrate 41. . The first and second insulating layers 43 and 45 include Y 2 O 3 , Ta 2 O 5 , Si 3 N 4 , SiO 2 , BaTiO 3 ,
An insulating thin film such as SrTiO 3 or Al 2 O 3 is formed by vacuum evaporation, sputtering, or plasma CVD. Also,
The light-emitting layer 44 is made of ZnS:Mn that emits yellow-orange light.
has the highest brightness and is commonly used.
このような薄膜ELパネルは完全な面発光であ
り視認性に優れていると共に、時分割駆動性も良
好であり、パーソナルコンピユータの表示装置等
に使用されているが、近年、EL表示装置のより
一層の大面積化、大表示容量化が強く望まれてき
ている。大面積化、大表示容量化の実現には、透
明電極の抵抗が高いことが大きな障害になつてい
る。薄膜ELパネルは発光時に大きな実効電流が
流れると共に、第４図の構造からも判るように、
非常に大きな容量性の素子であり、充放電のため
にも大電流が必要である。背面電極は抵抗の低い
Al等の金属が使用でき問題はないが、透明電極
として使用されているITO膜は良好なものでも
10Ω／□程度の面積抵抗を有しており、透明電極
ラインのCRの時定数は相当大きい。この為、大
面積化や大表示容量化に伴なつて発光表示画素に
十分な電圧を印加することができなくなり、輝度
の低下や発光の不均一を生じる。また、透明電極
ラインでのジユール熱によりパネルが熱くなり、
使用に不都合を生じると共に、パネルの寿命に悪
影響を与える。 Such thin-film EL panels are completely surface-emitting and have excellent visibility, as well as good time-division drivability, and are used in display devices for personal computers, etc., but in recent years, EL display devices have become more popular. There is a strong desire for a larger area and larger display capacity. The high resistance of transparent electrodes is a major obstacle to realizing larger areas and larger display capacities. A large effective current flows through a thin-film EL panel when it emits light, and as can be seen from the structure in Figure 4,
It is a very large capacitive element and requires a large current for charging and discharging. The back electrode has low resistance
Metals such as Al can be used without any problems, but the ITO film used as a transparent electrode may be of good quality.
It has a sheet resistance of about 10Ω/□, and the CR time constant of the transparent electrode line is quite large. For this reason, as the area and display capacity increase, it becomes impossible to apply a sufficient voltage to the light-emitting display pixels, resulting in a decrease in brightness and non-uniformity in light emission. In addition, the panel becomes hot due to the heat generated by the transparent electrode line.
This causes inconvenience in use and adversely affects the life of the panel.
以上の理由から透明電極の低抵抗化が望まれて
いるが、低抵抗の透明導電材料の開発は非常に困
難であり、比抵抗の小さい金属膜を透明導電膜の
脇に補助的に形成した複合構造の電極ラインの採
用が検討されている。最も単純な構造を第５図に
示す。これはストライプ上の透明導電膜５２に沿
つてライン状の補助金属膜５７が形成されたもの
である。金属膜の比抵抗が小さいために透明電極
を実効的に低抵抗化することができる。補助金属
膜の形状は第５図の構造の他に、ITOラインの両
側に形成したり、あるいは梯子状の形状にしても
よい。 For the above reasons, it is desired to reduce the resistance of transparent electrodes, but developing low-resistance transparent conductive materials is extremely difficult, so a metal film with low resistivity is formed as an auxiliary layer next to the transparent conductive film. Adoption of an electrode line with a composite structure is being considered. The simplest structure is shown in FIG. In this case, a linear auxiliary metal film 57 is formed along a striped transparent conductive film 52. Since the specific resistance of the metal film is low, the resistance of the transparent electrode can be effectively reduced. In addition to the structure shown in FIG. 5, the auxiliary metal film may be formed on both sides of the ITO line, or may have a ladder-like shape.
補助金属膜を付加することにより透明電極を低
抵抗化することが、第５図の構造から判るよう
に、補助金属膜５７と背面電極５６の間で画定さ
れた部分の薄膜EL発光層５４からの発光は表示
に寄与せず、いたずらに消費電力の増大をもたら
す問題があつた。また、薄膜ELパネルでは製造
時に導入された欠陥を核として絶縁破壊による損
傷が発生するが、この破壊が補助金属膜５７部分
で生じた場合は致命的なライン欠陥になりやすい
傾向があり、歩留まりや信頼性の低下をもたらし
ていた。
As can be seen from the structure of FIG. 5, adding an auxiliary metal film lowers the resistance of the transparent electrode. There was a problem in that the light emission did not contribute to display and unnecessarily increased power consumption. In addition, in thin-film EL panels, damage occurs due to dielectric breakdown caused by defects introduced during manufacturing, but if this breakdown occurs in the auxiliary metal film 57 part, it tends to become a fatal line defect, which reduces yield. This resulted in a decrease in reliability.
本発明はガラス基板上に透明導電膜と補助金属
膜からなる低抵抗化された透明電極ラインとと背
面電極の間に発光層及び絶縁層が挟まれた構成の
薄膜ELパネルにおいて、前記補助金属膜を覆う
ように補助金属膜用絶縁膜が付加されていること
を特徴とするものである。
The present invention provides a thin film EL panel having a structure in which a light-emitting layer and an insulating layer are sandwiched between a transparent electrode line with reduced resistance made of a transparent conductive film and an auxiliary metal film on a glass substrate, and a back electrode. This is characterized in that an auxiliary metal film insulating film is added to cover the film.
第１図に本発明のELパネルの構造を示す。本
発明の要旨とするところは、透明導電膜２と補助
金属膜７で構成された透明電極において補助金属
膜上に補助金属膜用絶縁膜８が形成されているこ
とにある。発光層４や第１及び第２絶縁層３，５
は均一は膜厚で形成されるので、補助金属膜７と
背面電極６で挟まれた部分は透明導電膜２と背面
電極６で挟まれた部分より補助金属膜用絶縁膜８
の厚さだけ厚くなつている。透明導電膜２上の発
光層が発光する駆動電圧を電極間に印加した場合
においても補助金属膜用絶縁膜８をある程度厚く
することにより、この部分の発光開始電圧を駆動
電圧以上にすることができ、無駄な発光をなくす
ことができる。また、補助金属膜用絶縁膜の採用
により、この部分の絶縁耐圧を高くすることがで
きるために、絶縁破壊によるライン切れ欠陥の発
生が抑制できる効果もある。
FIG. 1 shows the structure of the EL panel of the present invention. The gist of the present invention is that in a transparent electrode composed of a transparent conductive film 2 and an auxiliary metal film 7, an auxiliary metal film insulating film 8 is formed on the auxiliary metal film. The light emitting layer 4 and the first and second insulating layers 3 and 5
is formed with a uniform thickness, so the part sandwiched between the auxiliary metal film 7 and the back electrode 6 is thicker than the part sandwiched between the transparent conductive film 2 and the back electrode 6, so that the auxiliary metal film insulating film 8
It is getting thicker by the thickness of . Even when a driving voltage is applied between the electrodes to cause the light emitting layer on the transparent conductive film 2 to emit light, by increasing the thickness of the auxiliary metal film insulating film 8 to a certain extent, the light emission starting voltage of this portion can be made higher than the driving voltage. This eliminates unnecessary light emission. Furthermore, by employing the insulating film for the auxiliary metal film, the dielectric breakdown voltage of this portion can be increased, which has the effect of suppressing the occurrence of line breakage defects due to dielectric breakdown.
このような透明導電膜、補助金属膜、補助金属
膜用絶縁膜からなる構造は各膜を順次成膜、パタ
ーン化することで製造することができるが、補助
金属膜用絶縁膜として陽極酸化膜や熱酸化膜ある
いは感光性樹脂膜を使用した構成にすることによ
り比較的簡単に製造することができる。 Such a structure consisting of a transparent conductive film, an auxiliary metal film, and an insulating film for the auxiliary metal film can be manufactured by sequentially forming and patterning each film. It can be manufactured relatively easily by using a structure using a thermal oxide film, a thermal oxide film, or a photosensitive resin film.
〔実施例 １〕
本発明の実施例１について第２図の製造工程概
念図に従つて説明する。[Example 1] Example 1 of the present invention will be described with reference to the conceptual diagram of the manufacturing process in FIG.
ガラス基板２１上に厚さ0.05μm、面積抵抗
50Ω／□のITO膜を成膜し、0.3mmピッチ、0.27mm
幅にパタン化された透明導電膜２２を形成した
（第２図イ）。この上にAlを0.4μmの厚さに蒸着し
た後、透明導電膜に沿つて幅0.05mmにパタン化し
た金属膜23を形成した（第２図ロ）。この後、ホ
ウ酸系の化成液によりAlラインの表面を陽極酸
化した。この処理により、未酸化部の約0.2μmの
Alが補助金属膜２４となると共に、陽極酸化に
より形成された約0.25μmのAl2O3膜が補助金属膜
２４を完全に覆つた補助金属膜用絶縁膜２５とし
て形成される（第２図ハ）。Alの比抵抗は、ITO
の比抵抗に対して２桁程度小さいために、幅0.05
mmの厚さ約0.2μmの補助金属膜により透明電極の
実効的抵抗値を大幅に下げることができた。この
上に通常の薄膜ELパネルを製造するのと同様の
工程により、厚さ0.4μmのZnS：Mn発光層、厚
さ0.3μmのTaAlOスタツタ膜及び0.08μm厚さの
Al2O3スパツタ膜の２層からなる第２絶縁層を全
面に形成した後、透明電極と直交した配置でAl
の背面電極を0.03mmピツチ、0.22mm幅で形成し
た。 0.05μm thickness, sheet resistance on glass substrate 21
50Ω/□ ITO film is deposited, 0.3mm pitch, 0.27mm
A transparent conductive film 22 patterned in width was formed (FIG. 2A). After depositing Al to a thickness of 0.4 μm on this, a patterned metal film 23 having a width of 0.05 mm was formed along the transparent conductive film (FIG. 2B). Thereafter, the surface of the Al line was anodized using a boric acid-based chemical solution. By this treatment, approximately 0.2μm of unoxidized area
Al becomes the auxiliary metal film 24, and an approximately 0.25 μm Al 2 O 3 film formed by anodic oxidation is formed as the auxiliary metal film insulating film 25 that completely covers the auxiliary metal film 24 (Fig. 2). c). The specific resistance of Al is ITO
The width is 0.05 because it is about two orders of magnitude smaller than the specific resistance of
The effective resistance value of the transparent electrode could be significantly lowered by using an auxiliary metal film with a thickness of approximately 0.2 μm. On top of this, a 0.4 μm thick ZnS:Mn emitting layer, a 0.3 μm thick TaAlO stutter film, and a 0.08 μm thick
After forming a second insulating layer consisting of two layers of Al 2 O 3 sputtered film on the entire surface, Al
The back electrodes were formed with a pitch of 0.03 mm and a width of 0.22 mm.
このようにして作成した薄膜ELパネルの透明
導電膜と背面電極で挟まれた表示部分では、
170Vの印加電圧で発光を開始し、200Vで実用的
な輝度が得られる。これに対して、陽極酸化膜が
付加されている補助金属膜と背面電極で挟まれた
部分の発光開始電圧は220Vであり、このパネル
の200Vの動作電圧では発光しない。また、この
動作電圧では補助金属膜と背面電極間で絶縁破壊
の発生はなく安定であつた。 In the display area sandwiched between the transparent conductive film and the back electrode of the thin-film EL panel created in this way,
It starts emitting light at an applied voltage of 170V, and reaches practical brightness at 200V. On the other hand, the light emission starting voltage of the part sandwiched between the auxiliary metal film to which the anodic oxide film is added and the back electrode is 220V, and the panel does not emit light at an operating voltage of 200V. Further, at this operating voltage, there was no dielectric breakdown between the auxiliary metal film and the back electrode, and the device was stable.
なお、本実施例では簡単のため補助金属膜は透
明導電膜上の一方の側に沿つて形成された形状に
ついて説明したが、勿論、透明導電膜の両側に形
成してもよいし、あるいは、更に抵抗を下げるた
めに梯子状に形成してもよい。勿論、補助金属膜
の一部は透明導電膜をはみ出してガラス基板上に
形成されていてもよい。また、本実施例ではAl
を補助金属膜として使用したが、Al以外にも弁
作用を有するTa，Ti，Zr等を使用することが、
比抵抗、及び陽極酸化膜の誘電率の点でAlが最
適である。但し、高温での発光層の熱処理を行な
う場合は耐熱性の良いTiやTaが適している。 In this example, for simplicity, the auxiliary metal film is formed along one side of the transparent conductive film, but of course it may be formed on both sides of the transparent conductive film, or In order to further reduce the resistance, it may be formed into a ladder shape. Of course, a part of the auxiliary metal film may be formed on the glass substrate, protruding from the transparent conductive film. In addition, in this example, Al
was used as the auxiliary metal film, but in addition to Al, it is also possible to use Ta, Ti, Zr, etc., which have valve action.
Al is optimal in terms of resistivity and dielectric constant of the anodic oxide film. However, when heat-treating the light-emitting layer at high temperatures, Ti and Ta, which have good heat resistance, are suitable.
〔実施例 ２〕
実施例１と同様にガラス基板上にITO膜の透明
導電膜、及び透明導電膜に沿つた金属膜のライン
を形成した。金属膜材料としてTaを用いた。厚
さは約0.6μmとした。この後、大気中500℃で熱
処理を行ないTa膜表面を熱酸化した。未酸化の
部分が補助金属膜となり、熱酸化Ta2O5膜が補助
金属用絶縁膜となる。この上に第１絶縁層、発光
層、第２絶縁層、背面電極を形成し薄膜ELパネ
ルを完成した。[Example 2] As in Example 1, a transparent conductive film of ITO film and a line of metal film along the transparent conductive film were formed on a glass substrate. Ta was used as the metal film material. The thickness was approximately 0.6 μm. After this, heat treatment was performed in the air at 500°C to thermally oxidize the surface of the Ta film. The unoxidized portion becomes an auxiliary metal film, and the thermally oxidized Ta 2 O 5 film becomes an auxiliary metal insulating film. A first insulating layer, a light emitting layer, a second insulating layer, and a back electrode were formed on this to complete a thin film EL panel.
〔実施例 ３〕
第３図は本発明の実施例３の製造工程の一部を
示した図である。[Example 3] FIG. 3 is a diagram showing a part of the manufacturing process of Example 3 of the present invention.
ガラス基板３１上にITOから成る透明導電膜３
２を形成（第３図イ）した後、0.2μmのAlの金属
膜３３を形成する（第３図ロ）。この後、感光性
樹脂を全面に塗布した後、ホトリソグラフイ技術
により、透明導電膜３２に沿うようにパタン化さ
れた補助金属膜用絶縁膜３４を形成した（第３図
ハ）。本実施例では感光性樹脂として感光性ポリ
イミドを使用し、パタン化した後、400℃でキユ
アーした。厚さは約1μmである。なお、ポリイミ
ド以外に通常のホトレジスト等を使用してもよ
い。最後に補助金属膜用絶縁膜３４をマスクとし
てAl膜をエツチングして補助金属膜３５を形成
した（第３図ニ）。この基板上に、実施例１と同
じ絶縁層や発光層を形成し薄膜ELパネルを形成
した。実施例１と同様の特性が得られた。感光性
樹脂を利用しているため発光層の熱処理温度には
制限を受けるが、工程は非常に簡単である。 Transparent conductive film 3 made of ITO on a glass substrate 31
2 (FIG. 3A), a 0.2 μm Al metal film 33 is formed (FIG. 3B). Thereafter, a photosensitive resin was applied to the entire surface, and then a patterned auxiliary metal film insulating film 34 was formed along the transparent conductive film 32 by photolithography (FIG. 3C). In this example, photosensitive polyimide was used as the photosensitive resin, and after patterning, it was cured at 400°C. The thickness is approximately 1 μm. Note that ordinary photoresist or the like may be used instead of polyimide. Finally, the Al film was etched using the auxiliary metal film insulating film 34 as a mask to form an auxiliary metal film 35 (FIG. 3D). On this substrate, the same insulating layer and light emitting layer as in Example 1 were formed to form a thin film EL panel. The same characteristics as in Example 1 were obtained. Since it uses a photosensitive resin, there are restrictions on the heat treatment temperature of the light emitting layer, but the process is very simple.
なお、補助金属膜としてはAl以外に、Cr、Ti、
Ni等の各種の金属を使用することができるし、
形状も第３図の例に限定されるものではない。 In addition to Al, auxiliary metal films include Cr, Ti,
Various metals such as Ni can be used,
The shape is also not limited to the example shown in FIG.
また、上記いずれの実施例の場合も補助金属膜
用絶縁膜を設けていたが、補助金属膜用絶縁膜を
新たに設けず、第１又は第２絶縁層を厚めに形成
し、この絶縁層のうち補助金属膜に対応する領域
以外を少しエツチングで除去し、補助金属膜に対
応する部分は厚く、その他の部分は薄くなるよう
に絶縁膜を形成した構造でもよい。 In addition, although the insulating film for the auxiliary metal film was provided in each of the above embodiments, the insulating film for the auxiliary metal film was not newly provided, the first or second insulating layer was formed thicker, and this insulating film A structure may also be used in which the area other than the area corresponding to the auxiliary metal film is removed by slight etching, and the insulating film is formed so that the area corresponding to the auxiliary metal film is thick and the other areas are thin.
〔発明の効果」
以上、述べてきたように、本発明のELパネル
は実効的に透明電極の抵抗値を大幅に下げること
ができるにもかかわらず、電極ラインの容量の増
大が最小限に押えられ、また無駄な発光も伴なわ
ないために、透明電極のCR時定数が大幅に低減
され、また、低消費電力化やパネル面での発熱の
防止にも効果がある。従つて、従来困難であつた
大表示容量、大面積のEL表示装置の実現に本発
明の寄与する所大である。[Effects of the Invention] As described above, although the EL panel of the present invention can effectively significantly lower the resistance value of the transparent electrode, the increase in capacitance of the electrode line can be kept to a minimum. Furthermore, since there is no unnecessary light emission, the CR time constant of the transparent electrode is significantly reduced, and it is also effective in reducing power consumption and preventing heat generation on the panel surface. Therefore, the present invention greatly contributes to the realization of an EL display device with a large display capacity and large area, which has been difficult in the past.
第１図は本発明の薄膜ELパネルの断面図であ
る。第２図、第３図はそれぞれ本発明の実施例１
及び実施例３での製造工程の一部を示した図であ
る。第４図は薄膜ELパネルの基板構造の断面を
示した図である。第５図は補助金属膜を付加する
ことにより透明電極の低抵抗化を図つた従来の薄
膜ELパネルの断面構造図である。
１，２１，３１，４１……ガラス基板、２，２
２，３２，４２，５２……透明導電膜、３，４３
……第１絶縁層、４，４４，５４……発光層、
４，４５……第２絶縁層、６，４６，５６……背
面電極、７，２４，３５，５７……補助金属膜、
８，２５，３４……補助金属膜用絶縁膜、２３，
３３……金属膜。
FIG. 1 is a cross-sectional view of a thin film EL panel of the present invention. Embodiment 1 of the present invention is shown in FIGS. 2 and 3, respectively.
and FIG. 7 is a diagram showing a part of the manufacturing process in Example 3. FIG. 4 is a diagram showing a cross section of the substrate structure of the thin film EL panel. FIG. 5 is a cross-sectional structural diagram of a conventional thin film EL panel in which the resistance of a transparent electrode is reduced by adding an auxiliary metal film. 1, 21, 31, 41...Glass substrate, 2, 2
2, 32, 42, 52...transparent conductive film, 3, 43
...first insulating layer, 4,44,54...light emitting layer,
4, 45... Second insulating layer, 6, 46, 56... Back electrode, 7, 24, 35, 57... Auxiliary metal film,
8, 25, 34...Insulating film for auxiliary metal film, 23,
33...Metal film.
Claims (1)
膜に設けた補助金属膜とからなる透明電極と背面
電極との間に絶縁層を介して発光層が挟まれてな
る薄膜ELパネルにおいて、前記補助金属膜を覆
うように補助金属膜用絶縁膜が付加されているこ
とを特徴とする薄膜ELパネル。1. In a thin film EL panel in which a light emitting layer is sandwiched between a transparent electrode and a back electrode, which are made up of a transparent conductive film provided on a glass substrate and an auxiliary metal film provided on the transparent conductive film, with an insulating layer interposed therebetween, A thin film EL panel characterized in that an insulating film for the auxiliary metal film is added to cover the auxiliary metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62293326A JPH01134895A (en) | 1987-11-20 | 1987-11-20 | Thin film el panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62293326A JPH01134895A (en) | 1987-11-20 | 1987-11-20 | Thin film el panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01134895A JPH01134895A (en) | 1989-05-26 |
| JPH0576155B2 true JPH0576155B2 (en) | 1993-10-22 |
Family
ID=17793378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62293326A Granted JPH01134895A (en) | 1987-11-20 | 1987-11-20 | Thin film el panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01134895A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997034447A1 (en) * | 1996-03-12 | 1997-09-18 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent element and organic electroluminescent display |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299177A (en) * | 1992-04-22 | 1993-11-12 | Sharp Corp | Thin film electroluminescence element |
| US5559399A (en) * | 1992-06-11 | 1996-09-24 | Norden Systems, Inc. | Low resistance, thermally stable electrode structure for electroluminescent displays |
| TW471239B (en) * | 1999-01-22 | 2002-01-01 | Koninkl Philips Electronics Nv | Electroluminescent display screen for displaying fixed and segmented patterns, and method of manufacturing such an electroluminescent display screen |
| JP4693262B2 (en) * | 2000-03-27 | 2011-06-01 | 株式会社半導体エネルギー研究所 | Passive matrix light emitting device |
| KR101002537B1 (en) | 2002-08-02 | 2010-12-17 | 이데미쓰 고산 가부시키가이샤 | Sputtering target, sintered compact, conductive film manufactured using these, organic EL element, and board | substrate used for this |
| JP2008052154A (en) * | 2006-08-28 | 2008-03-06 | Optrex Corp | Electronic apparatus and manufacturing method of electronic apparatus |
| US8004188B2 (en) * | 2007-04-27 | 2011-08-23 | Koninklijke Philips Electronics N.V. | Light emitting device with anodized metallization |
| WO2012014759A1 (en) | 2010-07-26 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, and manufacturing method of light-emitting device |
| JP5999789B2 (en) * | 2015-03-02 | 2016-09-28 | Ｎｅｃライティング株式会社 | Method for manufacturing organic electroluminescent lighting device |
-
1987
- 1987-11-20 JP JP62293326A patent/JPH01134895A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997034447A1 (en) * | 1996-03-12 | 1997-09-18 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent element and organic electroluminescent display |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01134895A (en) | 1989-05-26 |
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