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JPH0576540B2 - - Google Patents
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JPH0576540B2 - - Google Patents

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Publication number
JPH0576540B2
JPH0576540B2 JP62184272A JP18427287A JPH0576540B2 JP H0576540 B2 JPH0576540 B2 JP H0576540B2 JP 62184272 A JP62184272 A JP 62184272A JP 18427287 A JP18427287 A JP 18427287A JP H0576540 B2 JPH0576540 B2 JP H0576540B2
Authority
JP
Japan
Prior art keywords
raw material
electrons
electron beam
electron
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62184272A
Other languages
Japanese (ja)
Other versions
JPS6428367A (en
Inventor
Hisashi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP18427287A priority Critical patent/JPS6428367A/en
Publication of JPS6428367A publication Critical patent/JPS6428367A/en
Publication of JPH0576540B2 publication Critical patent/JPH0576540B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、真空中にて原材料物質を電子で照射
して加熱し蒸発させ、半導体基板等の基体の表面
に薄膜を堆積させる電子ビーム蒸着装置の改良に
関する。
Detailed Description of the Invention (Industrial Application Field) The present invention is an electron beam evaporation method in which a raw material is irradiated with electrons in a vacuum, heated and evaporated to deposit a thin film on the surface of a substrate such as a semiconductor substrate. Concerning improvements to equipment.

(従来の技術とその問題点) 従来の電子ビーム蒸着装置では、第2図にその
概略の断面図を示すように、電流で加熱されたフ
イラメント(電子源)1から放出された電子を、
磁石6で作りだされる磁界により偏向させて原材
料物質5を照射しているが、半導体基板20やそ
の表面の堆積膜に非常に悪影響を及ぼす反射電子
や2次電子3,4は、前記した磁石6の作る磁界
でふたたび偏向させて、結局は電子銃本体7に取
り込むようにしていた。
(Prior art and its problems) In a conventional electron beam evaporation apparatus, as shown in a schematic cross-sectional view in FIG.
The source material 5 is irradiated by being deflected by the magnetic field created by the magnet 6, but the reflected electrons and secondary electrons 3 and 4, which have a very harmful effect on the semiconductor substrate 20 and the deposited film on its surface, are The electron beam was deflected again by the magnetic field created by the magnet 6, and was eventually taken into the electron gun body 7.

しかしこれらの反射電子や2次電子は、様々な
方向に様々な強度で散乱するため、前記した磁石
6の作る磁界により電子3,4のすべてを電子銃
本体7に取り込むことには困難があり、迷走電子
の除去が不十分であるため、例えば、迷走電子が
電子銃本体に捕えられないまま基体に飛来すると
いう問題があつた。
However, since these reflected electrons and secondary electrons are scattered with various strengths in various directions, it is difficult to capture all of the electrons 3 and 4 into the electron gun body 7 by the magnetic field created by the magnet 6. Since the removal of stray electrons is insufficient, there is a problem, for example, that stray electrons fly to the base without being captured by the electron gun body.

従来の装置の中には、図中、2点鎖線で示した
場所10などに補助磁石を置くなどして、積極的
に反射電子等3,4を取り込もうとする構成の装
置もあつたが、迷走電子の除去は必ずしも十分で
あるとは言えなかつた。
Some conventional devices were configured to actively capture reflected electrons 3 and 4 by placing an auxiliary magnet at a location 10 indicated by a two-dot chain line in the figure. Removal of stray electrons was not always sufficient.

一方、電子ビーム照射によつて蒸発した原材料
物質をイオン化して成膜させるような電子ビーム
蒸着装置では、電子銃と基板との間にイオン化機
構を設置しなければならず、装置が大型化し高価
につくという問題点があつた。
On the other hand, in an electron beam evaporation system that forms a film by ionizing raw materials evaporated by electron beam irradiation, an ionization mechanism must be installed between the electron gun and the substrate, making the system large and expensive. There was a problem with it sticking to the surface.

(発明の目的) 本発明は上記の如き迷走電子が基体に到達する
のを防ぎ、さらに小型の装置でありながら、蒸発
原材料物質をイオン化する機能を備えた新規の電
子ビーム蒸着装置を提供することを目的とする。
(Objective of the Invention) An object of the present invention is to provide a novel electron beam evaporation device that prevents stray electrons as described above from reaching a substrate, and furthermore, has the function of ionizing evaporation raw materials even though it is a small device. With the goal.

(問題点を解決するための手段) 本発明は、真空中で高電圧を印加して、電子源
で生成された電子を加速し、この加速された電子
を磁界によつて偏向させて、ルツボ内に収められ
た原材料物質を照射し、該原材料物質を加熱、溶
融して蒸発させ、該原材料物質に対向配置された
半導体基板等の基板体の上に薄膜を堆積させる電
子ビーム蒸着装置において、 該原材料物質と基体の間の空間に、該原材料物
質から反射した電子や該原材料物質から放出され
た2次電子を離散させないようにして捕らえて電
子の雲を作り、この電子の雲で前記蒸発物質をイ
オン化するような、磁場を設けた電子ビーム蒸着
装置によつて前記目的を達成したものである。
(Means for Solving the Problems) The present invention accelerates electrons generated in an electron source by applying a high voltage in a vacuum, and deflects the accelerated electrons by a magnetic field to form a crucible. In an electron beam evaporation apparatus that irradiates a raw material contained in a container, heats, melts and evaporates the raw material, and deposits a thin film on a substrate such as a semiconductor substrate placed opposite to the raw material. In the space between the raw material material and the substrate, electrons reflected from the raw material material and secondary electrons emitted from the raw material material are captured without being dispersed to form an electron cloud, and this electron cloud is used to evaporate the evaporation. The above object is achieved by using an electron beam evaporation apparatus provided with a magnetic field that ionizes the substance.

(実施例) 以下、図を用いて本発明の実施例を詳細に説明
する。
(Example) Hereinafter, an example of the present invention will be described in detail using the drawings.

第1図は本発明の実施例の概略の断面図であ
る。また、第3図は、イオン化用ポールピースの
側断面図である。第1図及び第3図に示すよう
に、本実施例の電子ビーム蒸着装置で使用された
電子銃本体7は、横に長い丸棒状の磁石6と、こ
の磁石6の両端に設けた一対の電子ビーム偏向用
ポールピース12と、さらにその一対の電子ビー
ム偏向用ポールピース12の外側を挟持するよう
にして設けた一対のイオン化用ポールピース11
とを有している。一対のイオン化用ポールピース
11は、第3図に示すように、上方の図示しない
基板に向かうようにして延び、双方の先端部は、
後述のように電子の雲を作る所定の高さの位置で
向かい合つている。フイラメント1から放出され
た電子ビーム2は、磁石6で作られる磁界により
偏向されて、原材料物質5に照射される。この電
子ビーム2のエネルギーによつて原材料物質5は
蒸発するが、このとき、原材料物質5に照射され
た電子2の多くは、原材料物質内に取り込まれる
が、原材料物質5内に飛び込まずに反射された電
子や2次電子として再び原材料物質から放出され
た電子3,4も前記したように少なからず存在す
る。
FIG. 1 is a schematic cross-sectional view of an embodiment of the invention. Moreover, FIG. 3 is a side sectional view of the ionization pole piece. As shown in FIGS. 1 and 3, the electron gun main body 7 used in the electron beam evaporation apparatus of this embodiment includes a horizontally long round bar-shaped magnet 6 and a pair of magnets provided at both ends of the magnet 6. An electron beam deflection pole piece 12 and a pair of ionization pole pieces 11 provided to sandwich the outside of the pair of electron beam deflection pole pieces 12.
It has As shown in FIG. 3, the pair of ionization pole pieces 11 extend toward an upper substrate (not shown), and both tip ends are
They face each other at a predetermined height, creating a cloud of electrons as described below. The electron beam 2 emitted from the filament 1 is deflected by the magnetic field created by the magnet 6 and is irradiated onto the raw material 5 . The raw material substance 5 is evaporated by the energy of this electron beam 2. At this time, most of the electrons 2 irradiated to the raw material substance 5 are taken into the raw material substance, but are reflected without jumping into the raw material substance 5. As described above, there are also quite a few electrons 3 and 4 emitted from the raw materials as secondary electrons.

これらの電子3,4のうち、比較的浅い角度で
反射した電子3は磁界により偏向されて従来通り
電子銃本体7に取り込まれる。しかし、大きい角
度、即ち基体の方向に放出された電子4は、本発
明で設けられたイオン化用ポールピース11が作
る磁場に捕えられて離散せず、ここに電子の雲を
作る。
Among these electrons 3 and 4, the electron 3 reflected at a relatively shallow angle is deflected by the magnetic field and taken into the electron gun body 7 as in the conventional case. However, the electrons 4 emitted at a large angle, that is, in the direction of the substrate, are caught by the magnetic field created by the ionization pole piece 11 provided in the present invention and are not dispersed, creating a cloud of electrons there.

この電子の雲は、蒸発物質が基体に向かつて走
る空間に作られる。
This cloud of electrons is created in the space in which the evaporated material travels toward the substrate.

この作用により、この実施例の装置では、従来
型の電子ビーム蒸着装置に比べて、基体に到達す
る迷走電子を激減させることが出来、また更に、
イオン化用ポールピース11の作る磁場に捕えら
れて形成された電子の雲は、電子ビーム照射で蒸
発し飛び出した原材料物質を、飛行の途中でイオ
ン化し、より強いエネルギーを持たせて基体に送
り出す。即ちこの電子の雲は、従来のイオン化処
理装置の役割を果たすことになる。
Due to this effect, the apparatus of this embodiment can drastically reduce stray electrons reaching the substrate compared to conventional electron beam evaporation apparatus, and furthermore,
The cloud of electrons formed by being captured by the magnetic field created by the ionization pole piece 11 ionizes the raw material that evaporates and flies out during the flight due to the electron beam irradiation, and sends it out to the substrate with stronger energy. In other words, this cloud of electrons plays the role of a conventional ionization processing device.

なお、装置が多少大型化するが、この実施例で
設けたイオン化用ポールピース11の代わりに、
磁石6とは別個に設けられた磁石を使つて、この
部分を通る磁気回路を構成しても同様の効果が得
られる。
Although the device becomes somewhat larger, instead of the ionization pole piece 11 provided in this embodiment,
A similar effect can be obtained by constructing a magnetic circuit passing through this portion using a magnet provided separately from the magnet 6.

なおまた、磁場を作る磁石は、永久磁石でも電
磁石でも効果は同様である。
Furthermore, the effect is the same whether the magnet that creates the magnetic field is a permanent magnet or an electromagnet.

(発明の効果) この発明によれば、有害な迷走電子が基体に到
達するのを防ぐとともに、蒸発した原材料物質の
イオン化を促進することが出来る。
(Effects of the Invention) According to the present invention, it is possible to prevent harmful stray electrons from reaching the substrate and to promote ionization of the evaporated raw material.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の実施例の概略の正面断面
図。第2図は、従来の同様の図。第3図は、イオ
ン化用ポールピースの側断面図。 1……フイラメント、2……電子ビーム、3,
4……反射電子若しくは2次電子、5……原材料
物質、6……磁石、7……電子銃本体、8……水
冷パイプ、9……真空容器、10……補助磁石、
11……イオン化用ポールピース。12……電子
ビーム偏向用ポールピース。
FIG. 1 is a schematic front sectional view of an embodiment of the present invention. FIG. 2 is a similar conventional diagram. FIG. 3 is a side sectional view of the ionization pole piece. 1...Filament, 2...Electron beam, 3,
4... Backscattered electrons or secondary electrons, 5... Raw material, 6... Magnet, 7... Electron gun body, 8... Water cooling pipe, 9... Vacuum container, 10... Auxiliary magnet,
11... Pole piece for ionization. 12...Pole piece for electron beam deflection.

Claims (1)

【特許請求の範囲】 1 真空中で高電圧を印加して、電子源で生成さ
れた電子を加速し、この加速された電子を磁界に
よつて偏向させて、ルツボ内に収められた原材料
物質を照射し、該原材料物質を加熱、溶融して蒸
発させ、該原材料物質に対向配置された半導体基
板等の基板の上に薄膜を堆積させる電子ビーム蒸
着装置において、 該原材料物質と基板の間の空間に、該原材料物
質に反射された電子や該原材料物質から放出され
た2次電子を離散させないようにして捕らえて電
子の雲を作り、この電子の雲によつて前記蒸発物
質をイオン化する如き磁場を設けたことを特徴と
する電子ビーム蒸着装置。
[Claims] 1 A high voltage is applied in a vacuum to accelerate electrons generated in an electron source, and the accelerated electrons are deflected by a magnetic field to form a raw material contained in a crucible. In an electron beam evaporation apparatus that irradiates the raw material, heats, melts and evaporates the raw material, and deposits a thin film on a substrate such as a semiconductor substrate placed opposite to the raw material. In space, electrons reflected by the raw material and secondary electrons emitted from the raw material are captured without being dispersed to form an electron cloud, and the evaporated material is ionized by this electron cloud. An electron beam evaporation device characterized by providing a magnetic field.
JP18427287A 1987-07-23 1987-07-23 Electron beam vapor deposition device Granted JPS6428367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18427287A JPS6428367A (en) 1987-07-23 1987-07-23 Electron beam vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18427287A JPS6428367A (en) 1987-07-23 1987-07-23 Electron beam vapor deposition device

Publications (2)

Publication Number Publication Date
JPS6428367A JPS6428367A (en) 1989-01-30
JPH0576540B2 true JPH0576540B2 (en) 1993-10-22

Family

ID=16150417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18427287A Granted JPS6428367A (en) 1987-07-23 1987-07-23 Electron beam vapor deposition device

Country Status (1)

Country Link
JP (1) JPS6428367A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60165374A (en) * 1984-02-09 1985-08-28 Matsushita Electronics Corp Electron beam vapor deposition apparatus

Also Published As

Publication number Publication date
JPS6428367A (en) 1989-01-30

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