JPH0576542B2 - - Google Patents
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- Publication number
- JPH0576542B2 JPH0576542B2 JP60225384A JP22538485A JPH0576542B2 JP H0576542 B2 JPH0576542 B2 JP H0576542B2 JP 60225384 A JP60225384 A JP 60225384A JP 22538485 A JP22538485 A JP 22538485A JP H0576542 B2 JPH0576542 B2 JP H0576542B2
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- JP
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- Prior art keywords
- sputtering
- vacuum chamber
- substrate
- pallet
- temperature
- Prior art date
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、スパツタリング現象を用いて薄膜形
成を行うパレツト移動型のスパツタリング装置に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a pallet moving type sputtering apparatus that forms a thin film using a sputtering phenomenon.
(従来の技術)
近年、スパツタリング現象を用いた薄膜形成技
術は、半導体産業分野において、例えば半導体の
保護膜、IC回路部品等、あるいは近年急速に産
業規模が拡大してきたコンパクトデイスク、光デ
イスク、光磁気デイスク等光メモリ素子のメデイ
ア製造分野等、多種多様な用途に広く用いられて
いる。(Prior art) In recent years, thin film forming technology using sputtering phenomenon has been used in the semiconductor industry, for example, for semiconductor protective films, IC circuit parts, etc., as well as for compact disks, optical disks, and optical disks, which have rapidly expanded in industrial scale in recent years. It is widely used in a wide variety of applications, including the media manufacturing field of optical memory devices such as magnetic disks.
一般にスパツタリングによる薄膜形成は、これ
まで主流であつた真空蒸着による薄膜形成に比
べ、大面積にかつ均一な特性を持つ薄膜が形成で
きること、また抵抗加熱による蒸着法では薄膜形
成が不可能な高融点材料であつても容易に薄膜形
成が可能であること等の利点を有している。 In general, thin film formation by sputtering can form thin films over a larger area and with more uniform properties than thin film formation by vacuum evaporation, which has been the mainstream until now.It also has a high melting point, which makes it impossible to form thin films with resistance heating vapor deposition. It has advantages such as being able to easily form a thin film even if it is made of other materials.
(発明が解決しようとする問題点)
しかしながら、スパツタリングによる薄膜形成
は、上記のような利点を有している反面、薄膜形
成速度が蒸着法に比べてかなり遅く、また基板が
プラズマにさらされるということ等も相俟つて基
板温度が上昇するという欠点を有しており、この
ことは薄膜を形成しようとする基板に制限を加え
ている。近年では、光メモリ素子の例を挙げる
と、基板が従来のガラスから安価なプラスチツク
へと移行しつつあり、プラスチツク基板上にスパ
ツタリングで膜を形成する必要性が増してきた。
周知の如く、光デイスク等の光メモリ素子の基板
として用いられる、いわゆるエンジニアリング・
プラスチツクはアクリル(PMMA)、ポリカーボ
ネート、エポキシ樹脂等が用いられているが、い
ずれもその熱変形温度は〜150℃程度である。し
たがつて、スパツタリングにて前記プラスチツク
基板に薄膜を形成する場合には、この熱変形温度
以下に温度上昇を抑えなければならない。(Problems to be Solved by the Invention) However, although thin film formation by sputtering has the above-mentioned advantages, the thin film formation speed is considerably slower than that of the vapor deposition method, and the substrate is exposed to plasma. These factors together have the drawback of increasing the substrate temperature, which places restrictions on the substrates on which thin films are to be formed. In recent years, to take the example of optical memory devices, substrates have been shifting from conventional glass to inexpensive plastics, and there has been an increasing need to form films on plastic substrates by sputtering.
As is well known, so-called engineering substrates are used as substrates for optical memory devices such as optical disks.
Plastics used include acrylic (PMMA), polycarbonate, and epoxy resin, all of which have heat distortion temperatures of about 150°C. Therefore, when forming a thin film on the plastic substrate by sputtering, it is necessary to suppress the temperature rise to below this thermal distortion temperature.
一般にスパツタリング装置においては、基板温
度の上昇を低減する目的で、基板は水冷あるいは
空冷等により冷却の行われた装置内ホルダに密着
保持する形がとられているが、生産性を向上させ
るべく開発されたパレツト移動型スパツタリング
装置、すなわち、基板をパレツト上に載置し、パ
レツトがチエーン駆動等により放電ターゲツト上
を移動し成膜が行われるものにおいては、装置内
を随時水平、上下方向等に移動する複数のパレツ
ト上の基板に対し有効に冷却を行うのは機構的に
甚だ困難である。 Generally, in sputtering equipment, in order to reduce the rise in substrate temperature, the substrate is closely held in a holder inside the equipment that is cooled by water or air cooling, but this was developed to improve productivity. In a pallet moving type sputtering apparatus, that is, one in which the substrate is placed on a pallet and the pallet is moved over the discharge target by a chain drive etc. to form a film, the inside of the apparatus is moved horizontally, vertically, etc. at any time. Mechanically, it is extremely difficult to effectively cool substrates on a plurality of moving pallets.
また、複数枚のパレツトを連続的に成膜処理し
ていく上記パレツト移動型スパツタリング装置に
おいては、時間経過とともに真空室内の雰囲気の
温度が上昇し、基板温度を上昇せしめることが懸
念される。 Furthermore, in the above-mentioned pallet moving type sputtering apparatus in which a plurality of pallets are continuously formed into films, there is a concern that the temperature of the atmosphere in the vacuum chamber increases over time, causing an increase in the substrate temperature.
以下に、本発明者等が行つた装置内温度および
基板温度の検討結果について述べる。 Below, the results of studies conducted by the inventors on the internal temperature of the device and the substrate temperature will be described.
第3図に検討を行つたパレツト移動型スパツタ
リング装置の部分概略断面図を示す。 FIG. 3 shows a partial schematic sectional view of the pallet moving type sputtering device that was studied.
符号aはスパツタリング装置の真空室壁であ
り、周囲は水冷がなされている。符号bはターゲ
ツト機構部であり、本装置はプレーナ型マグネト
ロンカソードタイプで、矩形ターゲツト(ボンデ
イングプレートを含む)およびターゲツト水冷機
構、およびターゲツト電極等からなる。このター
ゲツト機構部bは隣接して複数個設けられてい
る。符号cは、基板d…をチヤツキングしたパレ
ツトであり、チエーン駆動によりターゲツト機構
部b上を水平方向に移動するものである。符号
e,fは一般に防着板と呼ばれるものであり、ス
パツタリング粒子による装置の真空室内汚染を防
ぐために設けられたもので、随時交換を必要とす
る。 Reference numeral a indicates the wall of the vacuum chamber of the sputtering device, and the surrounding area is water-cooled. Reference numeral b designates a target mechanism section, and this device is of a planar magnetron cathode type, and consists of a rectangular target (including a bonding plate), a target water cooling mechanism, a target electrode, and the like. A plurality of target mechanism sections b are provided adjacent to each other. Reference numeral c denotes a pallet chucked with substrates d, which is moved horizontally over the target mechanism section b by chain drive. Symbols e and f are generally called adhesion prevention plates, which are provided to prevent contamination of the vacuum chamber of the apparatus by sputtering particles, and need to be replaced from time to time.
したがつて本装置において、防着板e,fは交
換の容易さを考慮し、防着効果を満足し得るとい
う目的で約1mm厚のSUS板を、装置真空室壁a
に設けられたスペーサボルトgに取り付けた構造
となつている。 Therefore, in this device, the anti-adhesion plates e and f are made of SUS plates with a thickness of about 1 mm, in consideration of ease of replacement and for the purpose of satisfying the anti-adhesion effect.
It has a structure in which it is attached to a spacer bolt g provided in the.
上記装置において種々の検討を行つた結果、ス
パツタリングによる成膜が行われている際にター
ゲツト表面からの輻射熱あるいはスパツタリング
粒子の衝突、膜形成時の飛来粒子の凝縮熱、電子
衝突等により防着板e,f表面近傍において熱が
発生するが、該防着板e,fは、水冷された真空
室壁aと上記スペーサボルトgでのみ介されてい
るだけであり、発生した熱が熱伝導により真空室
壁aに逃げる量は極めて少ない。このため防着板
e,fの温度は放電時間とともに急激に上昇し、
防着板e,f表面からの輻射熱が近傍を通過移動
するパレツトc上の基板d…の温度を著しく上昇
させてしまうことがわかつた。 As a result of various studies on the above equipment, we found that during film formation by sputtering, the adhesion prevention plate may be damaged due to radiant heat from the target surface or collision of sputtering particles, condensation heat of flying particles during film formation, electron collision, etc. Heat is generated near the surfaces e and f, but the adhesion prevention plates e and f are only interposed between the water-cooled vacuum chamber wall a and the spacer bolt g, and the generated heat is transferred by thermal conduction. The amount escaping to the vacuum chamber wall a is extremely small. Therefore, the temperature of the adhesion prevention plates e and f rises rapidly with discharge time,
It has been found that the radiant heat from the surfaces of the adhesion prevention plates e and f significantly increases the temperature of the substrates d... on the pallet c that are passing through and moving nearby.
本発明は以上の問題点を解消するためになされ
たものであり、スパツタリング時の基板温度の上
昇を低減する新規なパレツト移動型スパツタリン
グ装置を提供することを目的とするものである。 The present invention has been made to solve the above problems, and it is an object of the present invention to provide a novel pallet moving type sputtering apparatus that reduces the rise in substrate temperature during sputtering.
(問題点を解決するための手段)
本発明のパレツト移動型スパツタリング装置
は、基板をパレツト上に載置して放電ターゲツト
上を移動させ、前記基板上に薄膜を形成するパレ
ツト移動型スパツタリング装置において、前記放
電ターゲツトが設けられた真空室内をスパツタリ
ング粒子による汚染から護るとともに冷却効果を
有する防着部材を備え、該防着部材は熱容量の大
きいブロツク(塊)状に形成され、かつ熱伝導を
良くするために冷却がなされている真空室壁に面
接触状態で装着されたものである。(Means for Solving the Problems) The pallet moving sputtering apparatus of the present invention is a pallet moving sputtering apparatus in which a substrate is placed on a pallet and moved over a discharge target to form a thin film on the substrate. , the vacuum chamber in which the discharge target is provided is provided with an anti-adhesive member that protects the vacuum chamber in which the discharge target is provided from contamination by sputtering particles and has a cooling effect; It is mounted in surface contact with the wall of the vacuum chamber, which is cooled for the purpose of cooling.
(作用)
防着部材を熱容量の大きいブロツク(塊)状に
形成し、かつ冷却がなされている真空室壁に面接
触状態で装着したことにより、スパツタリングに
よる防着部材の温度上昇が低減され、防着部材の
表面からの輻射熱が抑えられる。これによつて、
防着部材の近傍を通過移動するパレツト上の基板
の温度を上昇させるおそれがなくなる。(Function) By forming the adhesion-preventing member into a block shape with a large heat capacity and attaching it in surface contact with the wall of the vacuum chamber, which is being cooled, the temperature rise of the adhesion-preventing member due to sputtering is reduced. Radiant heat from the surface of the adhesion prevention member is suppressed. By this,
There is no risk of raising the temperature of the substrates on the pallet that moves near the adhesion prevention member.
(実施例)
以下、本発明の一実施例を図面を参照して説明
する。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第1図は本発明に係るパレツト移動型スパツタ
リング装置の一実施例を示す部分概略断面図であ
る。 FIG. 1 is a partial schematic sectional view showing an embodiment of a pallet moving type sputtering apparatus according to the present invention.
このスパツタリング装置の真空室壁1は、その
周囲が水により冷却されており、一方の真空室壁
1にはターゲツト機構部2が連設して複数個設け
られている。これらターゲツト機構部2…は、矩
形ターゲツト、ターゲツト水冷機構およびターゲ
ツト電極等からなるものである。また、基板4…
をチヤツキングしたパレツト3がターゲツト機構
部2…上を水平方向(図中矢符参照)に移動可能
に設けられており、このパレツト3はチエーン駆
動(図示省略)により移動される。さらに、真空
室壁1のターゲツト機構部2…と対抗する箇所、
および隣接するターゲツト機構部2…間には、ス
パツタリング粒子による真空室9内の汚染を防ぐ
とともに、冷却効果を有する防着部材7…,8…
がそれぞれ装着されている。 The vacuum chamber wall 1 of this sputtering apparatus is cooled around the circumference by water, and one vacuum chamber wall 1 is provided with a plurality of target mechanisms 2 in series. These target mechanism sections 2 consist of a rectangular target, a target water cooling mechanism, a target electrode, and the like. In addition, the substrate 4...
A chucked pallet 3 is provided so as to be movable in the horizontal direction (see the arrow in the figure) above the target mechanism section 2, and this pallet 3 is moved by a chain drive (not shown). Further, a portion of the vacuum chamber wall 1 opposing the target mechanism portion 2...
Adhesion prevention members 7, 8, . . . have a cooling effect and prevent contamination of the vacuum chamber 9 by sputtering particles.
are installed respectively.
これら防着部材7…,8…は、ともにスパツタ
リング粒子の付着量が多くなつた時には随時交換
が可能なよう真空室壁1にネジ止めされており、
また真空室9内の寸法、形状が許す範囲内で最大
限に真空室壁1と面接触するよう接触面形状を考
慮し、また、熱伝導効率を良くするため、板状で
はなく熱容量の大きいブロツク(塊)状としてい
る。なお、防着部材7…,8…の材質としては、
比較的熱伝導率が良く、重量を軽減する目的でア
ルミニウムが好適に用いられる。 Both of these adhesion prevention members 7..., 8... are screwed to the vacuum chamber wall 1 so that they can be replaced at any time when the amount of adhesion of sputtering particles increases.
In addition, the shape of the contact surface has been considered to make surface contact with the vacuum chamber wall 1 as much as possible within the dimensions and shape of the vacuum chamber 9, and in order to improve heat conduction efficiency, it is not plate-shaped but has a large heat capacity. It is shaped like a block. In addition, the material of the adhesion prevention members 7..., 8... is as follows:
Aluminum is preferably used because it has relatively good thermal conductivity and to reduce weight.
次に本発明の効果を従来例のものと比較して第
2図を参照して説明する。 Next, the effects of the present invention will be explained in comparison with those of the conventional example with reference to FIG.
第2図中、点線で結んだ黒丸プロツトは、第3
図に示す従来のスパツタリング装置での基板温度
測定結果である。基板温度は市販のサーモラベル
を基板に貼りつけることで測定した。横軸は成膜
処理したパレツトの数であり、縦軸の基板温度は
第1番目のパレツト上の基板温度(第2中T1点)
で規格化した値を示す。この図からも明らかなよ
うに、従来のスパツタリング装置にあつては処理
パレツト数が増すにつれ基板温度が上昇している
ことがわかる。 In Figure 2, the black circle plot connected by dotted lines is the third
These are the results of substrate temperature measurement using the conventional sputtering apparatus shown in the figure. The substrate temperature was measured by attaching a commercially available thermolabel to the substrate. The horizontal axis is the number of pallets processed for film formation, and the vertical axis is the substrate temperature on the first pallet (T 1 point in the second).
Indicates the value normalized by . As is clear from this figure, in the conventional sputtering apparatus, as the number of pallets to be processed increases, the substrate temperature increases.
一方、第2図中、実線で結んだ白丸プロツト
は、本発明に係る装置での基板温度測定結果であ
る。この図からも明らかなように、処理パレツト
数によらず基板温度はほぼ一定であることがわか
る。 On the other hand, in FIG. 2, the white circle plots connected by solid lines are the results of substrate temperature measurement using the apparatus according to the present invention. As is clear from this figure, the substrate temperature is almost constant regardless of the number of pallets to be processed.
また、基板温度測定と同時に上記各々の防着板
及び防着部材の表面温度も測定したが、本発明に
よる装置の防着部材の表面温度は、5つのパレツ
トを成膜処理した時点においても、従来の装置で
2つのパレツトを成膜処理した後の防着板の表面
温度の1/2以下であつた。 Furthermore, at the same time as the substrate temperature measurement, the surface temperature of each of the above-mentioned adhesion prevention plates and adhesion prevention members was also measured, and the surface temperature of the adhesion prevention member of the apparatus according to the present invention was as follows even when five pallets were subjected to the film forming process. The surface temperature was less than 1/2 of the surface temperature of the adhesion-preventing plate after two pallets were formed using a conventional device.
以上のことから本発明によれば、防着部材の温
度上昇を著しく低減し、したがつて基板の温度上
昇を低減せしめ、かつ、多数枚のパレツトの連続
成膜処理を行つても時間経過とともに基板温度が
上昇することなく安定した成膜が可能となつてい
ることがわかる。 From the above, according to the present invention, it is possible to significantly reduce the temperature rise of the adhesion-preventing member, thereby reducing the temperature rise of the substrate, and even when a large number of pallets are continuously formed, it is possible to reduce the temperature rise over time. It can be seen that stable film formation is possible without increasing the substrate temperature.
なお、本実施例では防着部材7…,8…の材質
としてアルミニウムを用いたが、本発明はこれに
限定されるものではない。すなわち、防着部材7
…,8…の表面で発生した熱、あるいは表面に供
給された熱を有効に真空室壁1へ熱伝導により逃
がすことができるものであれば材質は問わない。
換言すれば、冷却のなされた真空室壁1との間の
熱伝導による冷却効果を持ち、その冷却効果がス
パツタリング成膜中に基板に熱的悪影響を与えな
い程度であれば材質は限定されるものではない。 In this embodiment, aluminum is used as the material for the adhesion prevention members 7, 8, but the present invention is not limited thereto. That is, the adhesion prevention member 7
The material may be any material as long as it can effectively release the heat generated on the surfaces of ..., 8, or the heat supplied to the surfaces to the vacuum chamber wall 1 by thermal conduction.
In other words, the material is limited as long as it has a cooling effect due to heat conduction between the cooled vacuum chamber wall 1 and the cooling effect does not have an adverse thermal effect on the substrate during sputtering film formation. It's not a thing.
(発明の効果)
以上述べたように本発明の装置は、防着部材を
熱容量の大きいブロツク(塊)状に形成し、かつ
真空室壁に面接触状態で装着したものであるか
ら、防着部材のスパツタリングによる温度上昇を
低減することができ、スパツタリング成膜中の基
板温度上昇を低減せしめることができる。したが
つて、プラスチツク基板等、耐熱性の低い基板に
対しても安定した成膜を行うことができるもので
ある。(Effects of the Invention) As described above, in the device of the present invention, the adhesion-preventing member is formed into a block shape with a large heat capacity and is attached to the wall of the vacuum chamber in surface contact. It is possible to reduce the temperature rise due to sputtering of the member, and it is possible to reduce the temperature rise of the substrate during sputtering film formation. Therefore, stable film formation can be performed even on substrates with low heat resistance such as plastic substrates.
第1図は本発明に係るパレツト型スパツタリン
グ装置の一実施例を示す部分概略断面図、第2図
は従来の装置および本発明に係る装置のスパツタ
リング成膜による基板温度と成膜処理パレツト数
の関係を示す特性図、第3図は従来のパレツト型
スパツタリング装置の部分概略断面図である。
1……真空室壁、2……ターゲツト機構部、3
……パレツト、4……基板、7,8……防着部
材。
FIG. 1 is a partial schematic sectional view showing an embodiment of a pallet type sputtering apparatus according to the present invention, and FIG. 2 shows changes in substrate temperature and number of film forming pallets during sputtering film formation using the conventional apparatus and the apparatus according to the present invention. A characteristic diagram showing the relationship, FIG. 3, is a partial schematic sectional view of a conventional pallet type sputtering apparatus. 1... Vacuum chamber wall, 2... Target mechanism section, 3
...Pallet, 4...Substrate, 7, 8...Adhesion prevention member.
Claims (1)
上を移動させ、前記基板上に薄膜を形成するパレ
ツト移動型スパツタリング装置において、前記放
電ターゲツトが設けられた真空室内をスパツタリ
ング粒子による汚染から護るとともに冷却効果を
有する防着部材を備え、該防着部材は熱容量の大
きいブロツク(塊)状に形成され、かつ熱伝導を
良くするために冷却がなされている真空室壁に面
接触状態で装着されていることを特徴とするパレ
ツト移動型スパツタリング装置。1. In a pallet moving sputtering device in which a substrate is placed on a pallet and moved over a discharge target to form a thin film on the substrate, the vacuum chamber in which the discharge target is provided is protected from contamination by sputtering particles and is cooled. The device is equipped with an effective anti-adhesive member, which is formed in the form of a block with a large heat capacity, and is attached in surface contact with the wall of the vacuum chamber, which is cooled to improve heat conduction. A pallet moving sputtering device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22538485A JPS6283467A (en) | 1985-10-09 | 1985-10-09 | Pallet moving type sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22538485A JPS6283467A (en) | 1985-10-09 | 1985-10-09 | Pallet moving type sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6283467A JPS6283467A (en) | 1987-04-16 |
| JPH0576542B2 true JPH0576542B2 (en) | 1993-10-22 |
Family
ID=16828509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22538485A Granted JPS6283467A (en) | 1985-10-09 | 1985-10-09 | Pallet moving type sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6283467A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01147061A (en) * | 1987-12-02 | 1989-06-08 | Sharp Corp | Pallet moving-type sputtering device |
| JPH02115366A (en) * | 1988-10-25 | 1990-04-27 | Sumitomo Special Metals Co Ltd | Sputtering device |
| KR20070043541A (en) * | 2005-10-21 | 2007-04-25 | 삼성에스디아이 주식회사 | Thin film deposition apparatus and thin film deposition method using the same |
| KR101769493B1 (en) * | 2011-12-23 | 2017-08-30 | 주식회사 원익아이피에스 | Substrate processing apparatus and substrate processing system |
| EP2650135A1 (en) * | 2012-04-12 | 2013-10-16 | KBA-NotaSys SA | Intaglio printing plate coating apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180756U (en) * | 1981-05-08 | 1982-11-16 |
-
1985
- 1985-10-09 JP JP22538485A patent/JPS6283467A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6283467A (en) | 1987-04-16 |
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