JPH0576543B2 - - Google Patents
Info
- Publication number
- JPH0576543B2 JPH0576543B2 JP60119171A JP11917185A JPH0576543B2 JP H0576543 B2 JPH0576543 B2 JP H0576543B2 JP 60119171 A JP60119171 A JP 60119171A JP 11917185 A JP11917185 A JP 11917185A JP H0576543 B2 JPH0576543 B2 JP H0576543B2
- Authority
- JP
- Japan
- Prior art keywords
- high voltage
- anode
- voltage terminal
- vacuum chamber
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は陽極高電圧端子部を陰極接地したカバ
で遮蔽して二次電子の飛び込みを防止した、イオ
ンビームスパツタ装置の陽極高電圧端子への二次
電子飛び込み防止機構に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to an anode high voltage terminal of an ion beam sputtering device in which the anode high voltage terminal is shielded with a cathode-grounded cover to prevent secondary electrons from entering. The present invention relates to a secondary electron injection prevention mechanism.
従来は第１図に示すようにスパツタ室１を７×
10-6Torr付近まで排気しながら、Arガス２を流
し込み約１桁圧力の高い６×10-5Torrの圧力に
保持します。イオン銃３の中心部陽極４にプラス
の高電圧を印加し、両端の電極５を接地してマイ
ナスに接続すると局部で放電を起こして電子６が
発生し、その電子が行つたり、来たりしているう
ちにArガスに衝突し、Arガスをイオン化する。
このイオン銃で発生した電子の一部はスパツタ室
に浮遊し、その浮遊二次電子が第２図に示すよう
にプラスの陽極高電圧端子７に飛び込み加熱す
る。そうするとパツキン８やシール材９熱変形し
て劣化した。また加熱されるとガス放出が起こつ
て圧力が高くなつて放電したりしてスパツタリン
グが不安定となつた。
Conventionally, as shown in Fig. 1, the sputtering chamber 1 was
While exhausting to around 10 -6 Torr, Ar gas 2 is poured in to maintain the pressure at 6 x 10 -5 Torr, which is about an order of magnitude higher. When a positive high voltage is applied to the central anode 4 of the ion gun 3 and the electrodes 5 at both ends are grounded and connected to the negative terminal, a local discharge occurs and electrons 6 are generated, and the electrons move back and forth. While doing so, it collides with Ar gas and ionizes it.
Some of the electrons generated by this ion gun float in the sputtering chamber, and the floating secondary electrons jump into the positive anode high voltage terminal 7 and heat it, as shown in FIG. As a result, the packing 8 and the sealing material 9 were thermally deformed and deteriorated. Furthermore, when heated, gas was released, the pressure increased, and electric discharge occurred, making sputtering unstable.
本発明の目的は、上記した従来技術の欠点をな
くし、陽極の高電圧端子に浮遊二次電子の飛び込
みをなくして、真空パツキンの劣化と安定なスパ
ツタができるようにするとである。
An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to eliminate floating secondary electrons from flying into the high voltage terminal of the anode, thereby preventing deterioration of the vacuum packing and producing stable spatter.
本発明は、浮遊二次電子を飛び込む陽極の高電
圧端子部を陰極接地したカバで遮蔽して、加熱を
防止することである。そしてシールパツキンの劣
化を防止し、かつ放電発生をなくして安定なスパ
ツタができるように工夫したものである。
The present invention is to prevent heating by shielding the high-voltage terminal portion of the anode into which floating secondary electrons can enter with a cathode-grounded cover. It is devised to prevent deterioration of the seal packing and to eliminate the occurrence of electrical discharge to produce stable sputtering.
本発明は第３図に示すようにイオン銃３に供給
する陽極高電圧導入端子７を陰極設置した遮蔽カ
バ１０でシールドして浮遊二次電子の飛び込みを
防止した。そしてシール材９やパツキン８の熱劣
化を防止した。
In the present invention, as shown in FIG. 3, the anode high voltage introducing terminal 7 that supplies the ion gun 3 is shielded with a shielding cover 10 provided with a cathode to prevent floating secondary electrons from entering. In addition, thermal deterioration of the sealing material 9 and the packing 8 is prevented.
本発明によれば陽極高電圧端子部を接地電位の
カバで遮蔽したので、
(1) 浮遊二次子の飛び込みを防止できる。そのた
め温度上昇がないので真空シールのパツキンや
シール材の劣化がない。
According to the present invention, since the anode high voltage terminal portion is shielded with a cover having a ground potential, (1) floating secondary particles can be prevented from flying in; Therefore, there is no temperature rise, so there is no deterioration of the vacuum seal packing or sealing material.
(2) 温度上昇がないため、ガス放出によつて真空
不良が起きない。そのため安定したスパツタリ
ングができる。(2) Since there is no temperature rise, vacuum failures do not occur due to gas release. Therefore, stable sputtering is possible.
第１図は従来の縦断面図である。第２図は第１
図の平面図である。第３図は本発明の平面図であ
る。
１はスパツタ室、２はArガス、３イオン銃、
４は陽極、５は電極、６は電子、７は陽極高電圧
端子、８はパツキン、９はシール材、１０は遮蔽
カバである。
FIG. 1 is a conventional longitudinal sectional view. Figure 2 is the first
FIG. FIG. 3 is a plan view of the present invention. 1 is a sputtering chamber, 2 is Ar gas, 3 is an ion gun,
4 is an anode, 5 is an electrode, 6 is an electron, 7 is an anode high voltage terminal, 8 is a packing, 9 is a sealing material, and 10 is a shielding cover.
Claims (1)
と、該真空槽内に配置されるイオン銃と、該イオ
ン銃に高電圧を供給する高電圧導入線と、該高電
圧導入線と接続して該真空槽の外部から該高電圧
導入線に高電圧を供給する陽極高電圧端子部とを
有するイオンビームスパツタ装置において、前記
陽極高電圧端子部を陽極に接地された陰極接地カ
バーにより覆うことを特徴とするイオンビームス
パツタ装置の陽極高電圧端子への二次電子飛び込
み防止装置。1. A vacuum chamber for performing ion beam sputtering, an ion gun placed in the vacuum chamber, a high voltage lead-in line that supplies high voltage to the ion gun, and a In an ion beam sputtering device having an anode high voltage terminal section that supplies high voltage to the high voltage lead-in line from outside the vacuum chamber, the anode high voltage terminal section may be covered with a cathode grounding cover grounded to the anode. Features: A device to prevent secondary electrons from jumping into the anode high voltage terminal of an ion beam sputtering device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11917185A JPS61276968A (en) | 1985-05-31 | 1985-05-31 | Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11917185A JPS61276968A (en) | 1985-05-31 | 1985-05-31 | Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61276968A JPS61276968A (en) | 1986-12-06 |
| JPH0576543B2 true JPH0576543B2 (en) | 1993-10-22 |
Family
ID=14754667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11917185A Granted JPS61276968A (en) | 1985-05-31 | 1985-05-31 | Prevention mechanism for flying of secondary electron into high-voltage anodic terminal for ion beam sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61276968A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5675572A (en) * | 1979-11-22 | 1981-06-22 | Fujitsu Ltd | Sputtering device |
-
1985
- 1985-05-31 JP JP11917185A patent/JPS61276968A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61276968A (en) | 1986-12-06 |
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