JPH0576793B2 - - Google Patents
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- JPH0576793B2 JPH0576793B2 JP58190730A JP19073083A JPH0576793B2 JP H0576793 B2 JPH0576793 B2 JP H0576793B2 JP 58190730 A JP58190730 A JP 58190730A JP 19073083 A JP19073083 A JP 19073083A JP H0576793 B2 JPH0576793 B2 JP H0576793B2
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- single crystal
- thin film
- lead titanate
- magnesium oxide
- substrate
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Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は強誘電体材料チタン酸鉛PbTiO3を用
いた薄膜圧電素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thin film piezoelectric element using a ferroelectric material lead titanate PbTiO 3 .
チタン酸鉛は強誘電相（正方晶系）大きな結晶
格子異方性および自発分極Psをもつ。一般に強
誘電体結晶における圧電性はPsに比例するもの
と考えられているので、チタン酸鉛の結晶は大き
な圧電性をもつことが期待される。しかし、実用
的な大きさのチタン酸鉛の単結晶を得るのは困難
であることから、現在はそのセラミツクスが用い
られている。ところが、これは結晶軸がランダム
に向つた結晶粒の集りであるため、自発分極が大
きいという特長が消えて、充分にチタン酸鉛の特
性が生かしきれない。これはチタン酸鉛を薄膜化
する場合でも同様に、結晶軸方向がランダムな多
結晶薄膜では充分な特性は期待できず、さらに薄
膜化による強誘電性の劣化（自発分極自身の減
少）も考えられる。
Lead titanate has a ferroelectric phase (tetragonal system), large crystal lattice anisotropy, and spontaneous polarization Ps. It is generally believed that piezoelectricity in ferroelectric crystals is proportional to Ps, so lead titanate crystals are expected to have high piezoelectricity. However, since it is difficult to obtain a single crystal of lead titanate of a practical size, ceramics of lead titanate are currently used. However, since this is a collection of crystal grains whose crystal axes are randomly oriented, the feature of large spontaneous polarization disappears, and the characteristics of lead titanate cannot be fully utilized. This is also the case when making lead titanate into a thin film; a polycrystalline thin film with random crystal axes cannot be expected to have sufficient properties, and furthermore, thinning the film may cause deterioration in ferroelectricity (reduction in spontaneous polarization itself). It will be done.
そこで最近、基板を選択してチタン酸鉛の単結
晶薄膜もしくはＣ軸配向した多結晶薄膜を得よう
という試みがなされている。例えば酸化マグネシ
ウム単結晶を基板とし、高周波スパツタリング法
でチタン酸鉛のエピタキシヤル成長を行なつたこ
とが報告された。（1983年春季第30回応用物理学
関係連合講演会予稿集p.691、講演番号7PZ−
３）。しかし、チタン酸鉛薄膜を圧電もしくは焦
電素子として用いるためには下地に電極を設ける
必要があり、結局素子化のために酸化マグネシウ
ム単結晶板上に白金の多結晶膜をスパツタしたも
のを基板として用いている。そのため、チタン酸
鉛薄膜はＣ軸配向しているものの多結晶膜とな
り、酸化マグネシウム単結晶を基板に用いた効果
が半減している。 Recently, attempts have been made to select a substrate and obtain a lead titanate single crystal thin film or a C-axis oriented polycrystalline thin film. For example, it has been reported that lead titanate was epitaxially grown using a high-frequency sputtering method using a magnesium oxide single crystal as a substrate. (Proceedings of the 30th Spring 1983 Applied Physics Conference, p. 691, lecture number 7PZ−
3). However, in order to use a lead titanate thin film as a piezoelectric or pyroelectric element, it is necessary to provide an electrode on the base, and in the end, to make the element, a substrate made by sputtering a polycrystalline platinum film on a single crystal magnesium oxide plate was used. It is used as Therefore, although the lead titanate thin film is C-axis oriented, it becomes a polycrystalline film, and the effect of using a magnesium oxide single crystal as a substrate is halved.
そこで、本発明の目的は優れた結晶性を有する
単結晶チタン酸鉛薄膜からなる複数の圧電素子を
有するアレー圧電変換器を提供することにある。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an array piezoelectric transducer having a plurality of piezoelectric elements made of a single-crystal lead titanate thin film having excellent crystallinity.
本発明の圧電素子は酸化マグネシウム等の単結
晶基板上に開口部を有する電極材料を形成し、開
口部を通してラテラルエピタキシー法によつてチ
タン酸鉛単結晶薄膜を形成することを特徴として
いる。ラテラルエピタキシー法とは主にSiからな
る素子を絶縁体上に形成する際に用いられる手法
である。〔例えば、J.C.C.Fan、M.W.Geis and
Ｂ−Y.Tsaur、Appl.Phys.Lett.、38(5)，365
（1981）〕この方法によれば、電極材料の開口部に
おいて、酸化マクネシウム等の単結晶上にエピタ
キシー成長したチタン酸鉛薄膜をさらに電極材料
上を横方向に成長を続けさせ、電極材料を包みこ
んだ単結晶薄膜にすることができる。したがつ
て、従来、酸化マグネシウム単結晶を用いたにも
かかわらず、その上にスパツタ蒸着した多結晶電
極材料がチタン酸鉛薄膜の単結晶化を阻害した問
題は本法によつて解決することができる。この結
果、結晶性の優れたチタン酸鉛単結晶薄膜を下地
電極材料上に形成することができ、さらに蒸着な
どにより上部電極を設けることで、チタン酸鉛本
来の特性を生かした優れた圧電素子を得ることが
できる。
The piezoelectric element of the present invention is characterized in that an electrode material having an opening is formed on a single crystal substrate such as magnesium oxide, and a lead titanate single crystal thin film is formed through the opening by lateral epitaxy. The lateral epitaxy method is a method used to form elements mainly made of Si on an insulator. [For example, JCCFan, MWGeis and
B-Y.Tsaur, Appl.Phys.Lett., 38(5), 365
(1981)] According to this method, a lead titanate thin film epitaxially grown on a single crystal of magnesium oxide or the like is further grown laterally on the electrode material in the opening of the electrode material, thereby enveloping the electrode material. It can be made into a dense single crystal thin film. Therefore, the present method solves the problem that conventionally, although magnesium oxide single crystal was used, the polycrystalline electrode material sputter-deposited thereon inhibited the single crystallization of the lead titanate thin film. I can do it. As a result, a lead titanate single crystal thin film with excellent crystallinity can be formed on the base electrode material, and by providing an upper electrode by vapor deposition, etc., an excellent piezoelectric element that takes advantage of the original characteristics of lead titanate can be created. can be obtained.
以下、本発明の実施例につき図面を参照して詳
しくは説明する。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
実施例 １
第１図は本発明になる圧電素子の外観構造を示
すもので、図中１は酸化マグネシウム等よりなる
単結晶基板、２は下部電極、３は開口部、４はチ
タン酸鉛を主成分とする薄膜、５は上部電極を示
している。また、第２図は第１図の圧電素子の断
面構造を示している。Example 1 FIG. 1 shows the external structure of a piezoelectric element according to the present invention. In the figure, 1 is a single crystal substrate made of magnesium oxide, etc., 2 is a lower electrode, 3 is an opening, and 4 is a lead titanate substrate. The main component is a thin film, and 5 indicates an upper electrode. Further, FIG. 2 shows a cross-sectional structure of the piezoelectric element shown in FIG. 1.
酸化マグネシウム単結晶１の（100）面上にフ
オトリソグラフイ法によつて2μｍ幅のライン、
5μｍ幅のスペースのレジストパターンを形成し
た。さらに、その上に電極の白金を100nｍの厚
さに蒸着した後、レジストを除去するリフトオフ
法で幅5μｍ、開口部の幅2μｍ、厚さ100nｍの白
金電極を形成した。ついで、高周波マグネトロン
スパツタリング法でチタン酸鉛を主成分とする薄
膜を形成した。スパツタ条件は基板温度550℃、
Ar−O2ガス（90％−10％）の圧力3Pa、スパツ
タ時間10時間を行ない、その膜厚は約3μｍであ
る。この薄膜はＸ線回折法により評価したとこ
ろ、（00l）の強い回折線ピークが現われ、Ｃ軸配
向していることがわかつた。さらに、反射電子線
回折法による評価を行なつた結果、単結晶膜にな
つていることが確認された、次に、５mmφのマス
クを用いてクロムと金を蒸着し、上部電極を形成
した。試料の温度を200℃に保ち、両電極間に
100kV／cmの直流電圧を20分印加して分極処理を
行なつた。電極間にバースト波を印加して超音波
を発生させ、円柱状酸化マグネシウムの他端面か
ら反射して帰つてきたエコーの強度を周波数0.1
〜1.2GHzの範囲で測定し、この周波数特性から
電気機械結合係数を計算すると0.60という値を得
た。これはセラミツクの値〜0.50を上回り、酸化
マグネシウム単結晶基板上に開口部のない白金電
極を設けた場合の値〜0.55をもはるかに上回る値
であり、単結晶膜の効果が現われたものと考えら
れる。 A 2 μm wide line was formed on the (100) plane of magnesium oxide single crystal 1 by photolithography.
A resist pattern with a space of 5 μm width was formed. Further, platinum for an electrode was vapor-deposited to a thickness of 100 nm thereon, and then a platinum electrode having a width of 5 μm, an opening width of 2 μm, and a thickness of 100 nm was formed by a lift-off method in which the resist was removed. Next, a thin film containing lead titanate as a main component was formed using a high frequency magnetron sputtering method. The sputtering conditions are a substrate temperature of 550℃,
Sputtering was carried out using Ar--O 2 gas (90%-10%) at a pressure of 3 Pa for 10 hours, and the film thickness was approximately 3 μm. When this thin film was evaluated by X-ray diffraction, a strong (00l) diffraction line peak appeared, indicating that it was C-axis oriented. Furthermore, as a result of evaluation by reflected electron beam diffraction, it was confirmed that the film was a single crystal film. Next, chromium and gold were deposited using a 5 mmφ mask to form an upper electrode. Keep the temperature of the sample at 200℃ and connect it between both electrodes.
Polarization treatment was performed by applying a DC voltage of 100 kV/cm for 20 minutes. A burst wave is applied between the electrodes to generate ultrasonic waves, and the intensity of the echo reflected from the other end of the cylindrical magnesium oxide is measured at a frequency of 0.1.
Measurements were made in the range of ~1.2GHz, and the electromechanical coupling coefficient was calculated from this frequency characteristic to obtain a value of 0.60. This value exceeds the value of ~0.50 for ceramics, and also far exceeds the value of ~0.55 when a platinum electrode without an opening is provided on a magnesium oxide single crystal substrate, indicating that the effect of the single crystal film has appeared. Conceivable.
実施例 ２
実施例１と同様な方法で酸化マグネシウム単結
晶基板上に2μｍ幅の開口部を有する厚さ100nｍ
の白金膜を蒸着した。さらに、この上に高周波マ
グネトロンスパツタリングにより酸鉛を主成分と
する薄膜を形成した。導入ガスの圧力3Pa、基板
は加熱しなかつた。この薄膜をＸ線回折により評
価したところ、顕著な回折線は現われず、非晶質
であつた。しかし、650℃で４時間熱処理を行な
つた後、再びＸ線回折を行なつたところ、（00l）
の強い回折線が現われ、Ｃ軸配向した結晶膜にな
つていることがわかつた。さらに、反射電子線回
折法による評価を行なつたところ、単結晶膜にな
つていることが確認された。このことから、非晶
質のチタン酸鉛薄膜を熱処理する方法を用いて
も、ラテラルエピタキシー成長によつて、白金電
極上にチタン酸鉛単結晶膜を形成できることがわ
かつた。さらに、上部電極を設け、分極処理を行
なつた後、実施例１と同様の方法で電気機械結合
係数を求めたところ、0.62という値を得た。Example 2 A magnesium oxide single crystal substrate with a thickness of 100 nm with an opening of 2 μm width was prepared in the same manner as in Example 1.
A platinum film was deposited. Furthermore, a thin film containing lead acid as a main component was formed on this by high-frequency magnetron sputtering. The pressure of the introduced gas was 3 Pa, and the substrate was not heated. When this thin film was evaluated by X-ray diffraction, no significant diffraction lines appeared and it was found to be amorphous. However, after heat treatment at 650℃ for 4 hours, we performed X-ray diffraction again and found that (00l)
A strong diffraction line appeared, indicating that the film was a C-axis oriented crystal film. Furthermore, evaluation by reflection electron beam diffraction method confirmed that the film was a single crystal film. From this, it was found that even if a method of heat treating an amorphous lead titanate thin film was used, a lead titanate single crystal film could be formed on a platinum electrode by lateral epitaxy growth. Furthermore, after providing an upper electrode and performing a polarization process, the electromechanical coupling coefficient was determined in the same manner as in Example 1, and a value of 0.62 was obtained.
実施例 ３
実施例２において、酸化マグネシウム単結晶基
板の代わりにチタン酸ストロンチウム単結晶基板
を用い、実施例２と同様に開口部を有する白金電
極、チタン酸鉛薄膜を蒸着した後、650℃で４時
間熱処理を行なつた。この試料をＸ線回折法で評
価したところ、（00l）の強い回析線が現われた。
さらに、反射電子線回折法による評価を行なつた
ところ、回折パターンから単結晶膜になつている
ことが明らかになつた。このことは、単結晶基板
としてチタン酸ストロンチウムを用いても、チタ
ン酸鉛がラテラルエピタキシー成長して、電極上
に単結晶膜を形成することを示すものである。さ
らに、上部電極を形成し、分極処理を行なつた
後、実施例１と同様の方法で電気機械結合係数を
測定したところ、0.59という値を得た。Example 3 In Example 2, a strontium titanate single crystal substrate was used instead of the magnesium oxide single crystal substrate, and after depositing a platinum electrode with an opening and a lead titanate thin film in the same manner as in Example 2, the substrate was heated at 650°C. Heat treatment was performed for 4 hours. When this sample was evaluated by X-ray diffraction, a strong (00l) diffraction line appeared.
Furthermore, when the film was evaluated by reflection electron beam diffraction, it became clear from the diffraction pattern that it was a single crystal film. This shows that even when strontium titanate is used as a single crystal substrate, lead titanate grows by lateral epitaxy to form a single crystal film on the electrode. Further, after forming an upper electrode and performing a polarization treatment, the electromechanical coupling coefficient was measured in the same manner as in Example 1, and a value of 0.59 was obtained.
以上により、酸化マグネシウム等の単結晶基板
上の電極材料上には開口部を通してチタン酸鉛単
結晶薄膜をエピタキシー成長させることができ、
電気機械結合係数が開口部のない場合をはるかに
越える厚電性の高い厚電素子が作成できることは
明らかである。 As described above, a lead titanate single crystal thin film can be epitaxially grown on an electrode material on a single crystal substrate such as magnesium oxide through the opening.
It is clear that it is possible to create a thick electrical element with high electro-mechanical coupling coefficient that far exceeds that of a case without an opening.
また、本発明により第３図に示すように複数の
素子を形成して、アレー変換器の作成も可能であ
る。第３図において、６は酸化マグネシウム等の
単結晶基板および下部電極を示し、７は上部電
極、８は下部電極に形成された開口部を示してい
る。第３図では開口部８は、細長い長方形の形状
で複数の個所に形成されており、平行に近接して
配置された４個の開口部８の存在する部分が１素
子に対応する部分であり、３素子の部分が完全な
形で示されている。これらの素子を作成するに
は、まず、酸化マグネシウム等の単結晶基板６上
に開口部８を有する下部電極を形成する。ついで
この上にチタン酸鉛薄膜を形成すると、開口部の
ある部分では単結晶薄膜が得られるが、開口部の
ない部分では多血晶膜となる。即ち、下部電極材
料の開口部において、酸化マグネシウム等の単結
晶上にエピタキシー成長したチタン酸鉛薄膜をさ
らに下部電極材料上を横方向に成長を続けさせ下
部電極材料を包みこんだ単結晶薄膜にすることが
でき、第３図に示した平行に近接して配置された
開口部８の存在する部分で１素子が形成されるこ
とになる。さらに、単結晶膜の部分に上部電極７
（第３図では、平行に近接して配置された４個の
開口部８の存在する部分を囲む大きな長方形の形
状で、３素子に対応する部分に完全な形で示され
ている。）を蒸着して分極処理を行なえば、この
部分のみが圧電活性となり、圧電素子が形成され
たことになる。このような複数の素子を形成すれ
ば、各々の素子（複数の近接した開口部を形成し
た部分）が独立に動作するアレー変換器ができる
ことは明らかである。 Further, according to the present invention, it is also possible to form an array converter by forming a plurality of elements as shown in FIG. In FIG. 3, 6 indicates a single crystal substrate such as magnesium oxide and a lower electrode, 7 indicates an upper electrode, and 8 indicates an opening formed in the lower electrode. In FIG. 3, the openings 8 have an elongated rectangular shape and are formed at a plurality of locations, and the portion where four openings 8, which are arranged close to each other in parallel, are present corresponds to one element. , a three-element section is shown in complete form. To create these elements, first, a lower electrode having an opening 8 is formed on a single crystal substrate 6 made of magnesium oxide or the like. When a lead titanate thin film is then formed on this, a monocrystalline thin film is obtained in the areas where there are openings, but a polycrystalline film is obtained in areas without openings. That is, in the opening of the lower electrode material, a lead titanate thin film epitaxially grown on a single crystal such as magnesium oxide is further grown laterally on the lower electrode material to form a single crystal thin film surrounding the lower electrode material. Therefore, one element is formed in the portion where the openings 8 shown in FIG. 3 are arranged in parallel and close to each other. Furthermore, an upper electrode 7 is placed on the single crystal film portion.
(In FIG. 3, the part corresponding to the three elements is shown in its complete form as a large rectangular shape surrounding the part where four openings 8 are arranged close to each other in parallel.) If vapor deposition and polarization treatment are performed, only this portion becomes piezoelectrically active, and a piezoelectric element is formed. It is clear that by forming a plurality of such elements, an array transducer can be created in which each element (a portion formed with a plurality of adjacent openings) operates independently.
以上、本発明によれば、結晶性の良好な単結晶
チタン酸鉛薄膜からなる複数の圧電素子を有する
アレー圧電変換器を得ることができる。
As described above, according to the present invention, it is possible to obtain an array piezoelectric transducer having a plurality of piezoelectric elements made of a single-crystal lead titanate thin film with good crystallinity.
第１図は本発明になる圧電素子の一構成例を示
す立体図、第２図はその部分断面図、第３図はア
レー変換器の一構成例を示す平面図である。
１……酸化マグネシウム等の単結晶基板、２…
…下部電極、３……開口部、４……チタン酸鉛を
主成分とする薄膜、５……上部電極、６……酸化
マグネシウム等の単結晶基板および下部電極、７
……上部電極、８……開口部。
FIG. 1 is a three-dimensional view showing an example of the structure of a piezoelectric element according to the present invention, FIG. 2 is a partial sectional view thereof, and FIG. 3 is a plan view showing an example of the structure of an array transducer. 1... Single crystal substrate of magnesium oxide, etc., 2...
... lower electrode, 3 ... opening, 4 ... thin film mainly composed of lead titanate, 5 ... upper electrode, 6 ... single crystal substrate such as magnesium oxide and lower electrode, 7
...Top electrode, 8...Opening.
Claims (1)
するように近接して形成された複数の開口部をも
つ素子領域が複数個所に設けられた下部電極を有
し、前記素子領域のそれぞれに単結晶から成るチ
タン酸鉛（PbTiO3）薄膜が、前記下部電極の前
記素子領域を除く前記下部電極の上に多結晶から
成るチタン酸鉛（PbTiO3）薄膜が、それぞれ形
成され、さらに前記単結晶から成るチタン酸鉛
（PbTiO3）薄膜の上に上部電極を有することを
特徴とするアレー圧電変換器。 ２ 前記の複数の開口部が平行に配置されたこと
を特徴とする特許請求の範囲第１項に記載のアレ
ー圧電変換器。 ３ 前記単結晶基板が酸化マグネシウムであるこ
とを特徴とする特許請求の範囲第１項に記載のア
レー圧電変換器。 ４ 前記単結晶基板がチタン酸ストロンチウムで
あることを特徴とする特許請求の範囲第１項に記
載のアレー圧電変換器。 ５ 前記チタン酸鉛（PbTiO3）薄膜が高周波ス
パツタリングで形成されたことを特徴とする特許
請求の範囲第１項に記載のアレー圧電変換器。[Scope of Claims] 1. A lower electrode having a plurality of element regions provided on a single crystal substrate with a plurality of openings formed close to each other so as to expose a part of the surface of the substrate. A lead titanate (PbTiO 3 ) thin film made of single crystal is formed in each of the element regions, and a lead titanate (PbTiO 3 ) thin film made of polycrystal is formed on the lower electrode except for the element region of the lower electrode. , respectively, and further comprising an upper electrode on a lead titanate (PbTiO 3 ) thin film made of the single crystal. 2. The array piezoelectric transducer according to claim 1, wherein the plurality of openings are arranged in parallel. 3. The array piezoelectric transducer according to claim 1, wherein the single crystal substrate is made of magnesium oxide. 4. The array piezoelectric transducer according to claim 1, wherein the single crystal substrate is strontium titanate. 5. The array piezoelectric transducer according to claim 1, wherein the lead titanate (PbTiO 3 ) thin film is formed by high frequency sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58190730A JPS6083387A (en) | 1983-10-14 | 1983-10-14 | array piezoelectric transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58190730A JPS6083387A (en) | 1983-10-14 | 1983-10-14 | array piezoelectric transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6083387A JPS6083387A (en) | 1985-05-11 |
| JPH0576793B2 true JPH0576793B2 (en) | 1993-10-25 |
Family
ID=16262835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58190730A Granted JPS6083387A (en) | 1983-10-14 | 1983-10-14 | array piezoelectric transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6083387A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07101832B2 (en) * | 1986-06-23 | 1995-11-01 | 株式会社日立製作所 | Piezoelectric transducer and manufacturing method thereof |
| JP3782282B2 (en) * | 2000-04-17 | 2006-06-07 | 松下電器産業株式会社 | Method for manufacturing piezoelectric driving body |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52113713A (en) * | 1976-03-22 | 1977-09-24 | Hitachi Ltd | Array type ultra-high frequency sound oscillator |
| JPS58186105A (en) * | 1982-04-26 | 1983-10-31 | 松下電器産業株式会社 | Ferrodielectric thin film and ferrodielectric element |
-
1983
- 1983-10-14 JP JP58190730A patent/JPS6083387A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6083387A (en) | 1985-05-11 |
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