Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0577177B2 - - Google Patents
[go: Go Back, main page]

JPH0577177B2 - - Google Patents

Info

Publication number
JPH0577177B2
JPH0577177B2 JP59277092A JP27709284A JPH0577177B2 JP H0577177 B2 JPH0577177 B2 JP H0577177B2 JP 59277092 A JP59277092 A JP 59277092A JP 27709284 A JP27709284 A JP 27709284A JP H0577177 B2 JPH0577177 B2 JP H0577177B2
Authority
JP
Japan
Prior art keywords
wafer
cpu
lsi
test
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59277092A
Other languages
Japanese (ja)
Other versions
JPS61150228A (en
Inventor
Shigeru Watari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59277092A priority Critical patent/JPS61150228A/en
Publication of JPS61150228A publication Critical patent/JPS61150228A/en
Publication of JPH0577177B2 publication Critical patent/JPH0577177B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明はLSIウエーハの高速かつ簡便な検査が
可能な検査回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a test circuit that can test LSI wafers at high speed and easily.

従来の技術 LSIが大規模になるにつれ、その機能検査は
増々困難になりつつある。その解決策としてLSI
回路に検査機能を付加することが試みられてい
る。特に、ウエーハスケールの大規模集積回路で
は、検査パターンを生成し出力結果を判定する専
用回路またはCPUをあらかじめウエーハ上に形
成して、それを動作させることでウエーハ内の各
構成ユニツトの良否を判定し、良品ユニツト間の
結線を行なうことが行なわれている(例えば、配
線のヒユーズプログラミング)。
Conventional Technology As LSIs become larger in scale, it is becoming increasingly difficult to test their functionality. LSI as a solution
Attempts are being made to add testing functionality to circuits. In particular, in wafer-scale large-scale integrated circuits, a dedicated circuit or CPU that generates test patterns and judges output results is formed on the wafer in advance, and by operating it, the quality of each component unit within the wafer is judged. However, connections between non-defective units are performed (for example, wiring fuse programming).

発明が解決しようとする問題点 このような従来のLSI検査回路は、他回路と一
緒にウエーハ上に形成されるため、プロセス不良
により検査回路自体が動作しないことがある。そ
のため検査回路を複数個形成して、ウエーハ内の
構成ユニツトだけでなく検査回路にも冗長性を持
たせなかればならず、それだけ全体システムが複
雑になりまたコストアツプになつていた。
Problems to be Solved by the Invention Since such conventional LSI test circuits are formed on a wafer together with other circuits, the test circuit itself may not operate due to process defects. Therefore, it is necessary to form a plurality of test circuits to provide redundancy not only to the constituent units within the wafer but also to the test circuits, which complicates the overall system and increases cost.

本発明は、簡単な構成で検査回路の冗長性を削
除し、大規模集積回路の検査を効率化することを
目的としている。
An object of the present invention is to eliminate redundancy in test circuits with a simple configuration and to improve the efficiency of testing large-scale integrated circuits.

問題点を解決するための手段 本発明は上記問題点を解決するため、あらかじ
め用意した汎用性の高い良品CPUチツプを検査
回路としてウエーハ上に装着し、ウエーハ上の回
転端子とCPU回路端子を接続してウエーハ内の
構成ユニツトの検査を行なうものである。
Means for Solving the Problems In order to solve the above problems, the present invention mounts a highly versatile non-defective CPU chip prepared in advance on a wafer as a test circuit, and connects the rotation terminal on the wafer and the CPU circuit terminal. The component units within the wafer are then inspected.

作 用 本発明は上記した構成により、ウエーハ上に検
査回路として組み込まれた良品CPUから内蔵プ
ログラムに従つて検査パターンがウエーハ上の構
成ユニツトに印加され、構成ユニツトからの出力
はCPUに読み込まれて期待値との比較が行なわ
れ、良否の判定が下される。
Operation According to the above-described configuration, the present invention applies a test pattern to the constituent units on the wafer according to a built-in program from a non-defective CPU incorporated as a test circuit on the wafer, and outputs from the constituent units are read into the CPU. A comparison is made with the expected value, and a pass/fail judgment is made.

実施例 第1図は本発明のLSI検査回路の一実施例を示
す平面図である。第1図において、ウエーハの非
能動領域すなわち非活性領域1上に有機樹脂等を
用いて良品のCPUチツプ2を接着する。領域1
の周辺には、ウエーハ内の回路構成ユニツトを結
ぶ信号線、電源ライン、グランドライン用のAl
電極3が配列されており、CPUチツプ2上のAl
電極4と金もしくはAlワイア線5にて接続され
ている。CPUを動作させるために、外部からプ
ローブを電源パツド6およびグランドパツド7に
立てて、電力を供給し、クロツクおよびスタート
信号をそれぞれパツド8,9から与える。検査を
実行するための命令は、CPU内部のROMもしく
はEPROMに格納されており、CPUはスタート
信号を受けて検査命令の実行を開始する。検査し
た結果は一時的にCPU内のRAMに格納してお
き、全数検査が完了した時点で直列データの形で
パツド10から外部に送り出す。
Embodiment FIG. 1 is a plan view showing an embodiment of the LSI testing circuit of the present invention. In FIG. 1, a good CPU chip 2 is bonded onto a non-active area 1 of a wafer using an organic resin or the like. Area 1
Around the wafer are aluminum wires for signal lines, power lines, and ground lines that connect the circuit configuration units within the wafer.
The electrodes 3 are arranged, and the Al on the CPU chip 2
It is connected to the electrode 4 by a gold or Al wire 5. To operate the CPU, external probes are connected to power supply pad 6 and ground pad 7 to supply power, and clock and start signals are supplied from pads 8 and 9, respectively. The instructions for executing the inspection are stored in the ROM or EPROM inside the CPU, and the CPU starts executing the inspection instructions upon receiving a start signal. The inspection results are temporarily stored in the RAM in the CPU, and are sent out from the pad 10 in the form of serial data when the complete inspection is completed.

フルウエーハスケールのLSIの検査について、
第2図をもと説明する。ウエーハ11上に
RAM、ROM、レジスタ等の回路構成ユニツト
12が冗長性をもたせて形で、すなわち複数個ず
つ配列されている。各構成ユニツトは、アドレス
が割当てられておりCPUからアクセスできるよ
うになつている。各ユニツトで共通な入出力信号
は全て結線されており、CPUから選択されたユ
ニツトのみ、内部に信号が入力されて動作する。
出力信号は、選択されたユニツトのみから与えら
れるため、CPUはその値を検査してそのユニツ
トの良否結果を0、1の2進符号でCPUの内部
RAMに書き込む。全ユニツトの検査が終了する
と結果をRAMから読み出し、その結果に従つて
不良ユニツトをレーザビームによる配線トリミン
グ等の手段を用いて結線から分離し、良品ユニツ
トのみからなる全体回路を実現する。
Regarding full wafer scale LSI inspection,
This will be explained based on FIG. on wafer 11
Circuit configuration units 12 such as RAM, ROM, registers, etc. are arranged in a redundant form, that is, in plural units. Each component unit is assigned an address and can be accessed by the CPU. All input/output signals common to each unit are connected, and only the unit selected by the CPU operates with signals input internally.
Since the output signal is given only from the selected unit, the CPU inspects its value and sends the pass/fail result of that unit as a binary code of 0 and 1 internally in the CPU.
Write to RAM. When all the units have been inspected, the results are read out from the RAM, and based on the results, defective units are separated from the connections by means such as wiring trimming with a laser beam, creating an entire circuit consisting only of good units.

なお、CPUをチツプのままの形でウエーハに
装着する場合について説明してきたが、パツケー
ジングされたもの(例えば、フラツトパツケージ
等)を使用することも可能である。
Although the case where the CPU is mounted as a chip on the wafer has been described, it is also possible to use a packaged CPU (for example, a flat package).

発明の効果 以上述べてきたように、本発明によれば、検査
回路として別チツプの良品CPUを使用するので、
検査回路に冗長性を持たせる必要がなく、それだ
け簡単にかつまた低コストでLSIの検査回路が実
現できる。
Effects of the Invention As described above, according to the present invention, since a non-defective CPU on a separate chip is used as the test circuit,
There is no need to provide redundancy to the test circuit, and an LSI test circuit can be realized easily and at low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例におけるLSI検査回
路を示す平面図、第2図は本発明の他の実施例の
LSI検査回路を示す平面図である。 1……非能動領域、2……CPUチツプ、3,
4……Al電極、5……金ワイア、11……ウエ
ーハ、12……回路構成ユニツト。
FIG. 1 is a plan view showing an LSI test circuit according to an embodiment of the present invention, and FIG. 2 is a plan view of an LSI test circuit according to another embodiment of the present invention.
FIG. 2 is a plan view showing an LSI test circuit. 1...Inactive area, 2...CPU chip, 3,
4... Al electrode, 5... Gold wire, 11... Wafer, 12... Circuit configuration unit.

Claims (1)

【特許請求の範囲】 1 ウエーハ表面の非能動領域上に、良品CPU
チツプを装着し、ウエーハ上にあらかじめ設けら
れた信号および電源およびグランド用の金属電極
と前記CPUチツプ上の金属電極とを選択的に接
続することを特徴とするLSI検査回路。 2 CPUチツプをパツケージングされたものと
し、ウエーハ上の金属電極とパツケージのリード
とを選択的に接続するようにした特許請求の範囲
第1項記載のLSI検査回路。
[Claims] 1. On the non-active area of the wafer surface, a non-defective CPU
1. An LSI inspection circuit on which a chip is mounted and selectively connects metal electrodes for signals, power and ground provided on a wafer in advance to metal electrodes on the CPU chip. 2. The LSI testing circuit according to claim 1, wherein the CPU chip is packaged, and metal electrodes on the wafer and leads of the package are selectively connected.
JP59277092A 1984-12-24 1984-12-24 Lsi inspecting circuit Granted JPS61150228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59277092A JPS61150228A (en) 1984-12-24 1984-12-24 Lsi inspecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59277092A JPS61150228A (en) 1984-12-24 1984-12-24 Lsi inspecting circuit

Publications (2)

Publication Number Publication Date
JPS61150228A JPS61150228A (en) 1986-07-08
JPH0577177B2 true JPH0577177B2 (en) 1993-10-26

Family

ID=17578660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59277092A Granted JPS61150228A (en) 1984-12-24 1984-12-24 Lsi inspecting circuit

Country Status (1)

Country Link
JP (1) JPS61150228A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3526485A1 (en) * 1985-07-24 1987-02-05 Heinz Krug CIRCUIT ARRANGEMENT FOR TESTING INTEGRATED CIRCUIT UNITS
JP2007303595A (en) * 2006-05-12 2007-11-22 Yanmar Co Ltd Transmission

Also Published As

Publication number Publication date
JPS61150228A (en) 1986-07-08

Similar Documents

Publication Publication Date Title
US5053700A (en) Method for wafer scale testing of redundant integrated circuit dies
US5489538A (en) Method of die burn-in
JPH11251531A (en) Semiconductor device layout structure
EP0834124B1 (en) Parallel testing of cpu cache and instruction units
JPH0577177B2 (en)
TW457425B (en) Semiconductor device and process of producing the same
JP2001110858A (en) Semiconductor device, method of manufacturing the same, and burn-in device
JPH02184043A (en) Manufacture of semiconductor device
US7521918B2 (en) Microcomputer chip with function capable of supporting emulation
JPS6281724A (en) Semiconductor device
JPH05136243A (en) Aging test pattern-provided semiconductor wafer
JPH02235356A (en) Semiconductor device
JPH0864648A (en) Semiconductor wafer
JPH0496343A (en) Semiconductor device
JPH0252262A (en) Electric inspecting method for multi-chip package
JP2609591B2 (en) Manufacturing method of integrated circuit device
JPS62298122A (en) Method for manufacturing semiconductor integrated circuit device
JPH05341014A (en) Semiconductor module mono-body, semiconductor module device, and method for testing
JP2972473B2 (en) Semiconductor device
JPS61190950A (en) Semiconductor device
JPH03142852A (en) Manufacture of wafer scale semiconductor device
JPH06101500B2 (en) Semiconductor integrated circuit device
JPH02216478A (en) Semiconductor device
JPH02309656A (en) Master slice type semiconductor integrated circuit
JPS60200537A (en) Semiconductor device with exclusive testing terminal