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JPH0578016B2 - - Google Patents
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JPH0578016B2 - - Google Patents

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Publication number
JPH0578016B2
JPH0578016B2 JP60214024A JP21402485A JPH0578016B2 JP H0578016 B2 JPH0578016 B2 JP H0578016B2 JP 60214024 A JP60214024 A JP 60214024A JP 21402485 A JP21402485 A JP 21402485A JP H0578016 B2 JPH0578016 B2 JP H0578016B2
Authority
JP
Japan
Prior art keywords
waveguide
electrodes
optical device
substrate
waveguide optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60214024A
Other languages
Japanese (ja)
Other versions
JPS6273207A (en
Inventor
Itsupei Sawaki
Minoru Kyono
Hiroki Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21402485A priority Critical patent/JPS6273207A/en
Publication of JPS6273207A publication Critical patent/JPS6273207A/en
Publication of JPH0578016B2 publication Critical patent/JPH0578016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00Function characteristic
    • G02F2203/21Thermal instability, i.e. DC drift, of an optical modulator; Arrangements or methods for the reduction thereof

Landscapes

  • Optical Integrated Circuits (AREA)

Description

【発明の詳細な説明】 〔概要〕 本発明は、電界を印加することによつて屈折率
を変化させる導波路において、電極間に膜体を具
備し、この膜体は基板に生じた分極による電荷に
対応して逆電荷を供給でき、かつ電極間の実質的
導通を阻止する抵抗値を有し、焦電効果を持つ
LiNbO3の自発分極が温度によつて変化した場合
に電極に誘起される電荷を、前記膜体を介して一
様に分布させるようにすることによつて、温度変
化によつて、電界が変化しないようにすることに
より特性変動を防止した導波路光デイバイスを提
供する。
[Detailed Description of the Invention] [Summary] The present invention provides a waveguide that changes the refractive index by applying an electric field, which is provided with a film body between electrodes, and this film body changes the refractive index by polarization generated in the substrate. It can supply an opposite charge in response to a charge, has a resistance value that prevents substantial conduction between electrodes, and has a pyroelectric effect.
By uniformly distributing the charge induced in the electrode when the spontaneous polarization of LiNbO 3 changes with temperature, the electric field changes with temperature change. To provide a waveguide optical device in which characteristic fluctuations are prevented by preventing such fluctuations.

〔産業上の利用分野〕[Industrial application field]

本発明は焦電効果を持つ強誘電体に形成した導
波路に係り、特に光スイツチング素子等に用いら
れる導波路光デイバイスに関する。
The present invention relates to a waveguide formed in a ferroelectric material having a pyroelectric effect, and more particularly to a waveguide optical device used in an optical switching element or the like.

〔従来の技術〕[Conventional technology]

導波路型光デイバイスは、低駆動電圧、高速動
作が可能で且つ小型集積化も有望である。しかし
リチウムナイオベイト(LiNbO3)のような焦電
効果すなわち自発分極を有する結晶を基板に用い
て、その基板にチタン(Ti)等の拡散層を形成
して導波路を構成したものにおいては、温度変化
によつて、焦電効果に基づく電荷が表面に発生
し、その電荷分布が一様でないため、導波路型光
デイバイスの例えばスイツチング特性等が変動し
てしまう。第5図aには従来の導波路の断面図を
示すもので、Z板LiNbO3からなる基板1にTi拡
散層2を形成して導波路とし、その上面にSiO2
からなるバツフア層3を形成し、その上面に例え
ばアルミニウムからなる複数の電極4を形成す
る。この光導波路において昇温すると、第5図b
に示すように、焦電効果によりZ板LiNbO3から
なる基板1は分極の状態を変化させるので、この
基板1の表面に生じた+電荷に対応した−電荷が
電極4の底面に外部から供給されることになる。
従つて、電極4のない電極間から電極4へ向けて
基板1内を図示の如き電界5が発生する。導波路
光デイバイスは、電極間に電界を印加することに
より、Ti拡散層2からなる導波路の屈折率を変
化させて、例えばスイツチ動作等を行せるもので
あるから、昇温によつて、前述の如く電界5が発
生すると、導波路光デイバイスの動作点例えばス
イツチング特性等に大きな影響を与えてしまう。
Waveguide type optical devices are capable of low driving voltage, high speed operation, and are promising for compact integration. However, in a waveguide constructed by using a crystal such as lithium niobate (LiNbO 3 ) that has a pyroelectric effect, that is, spontaneous polarization, as a substrate and forming a diffusion layer of titanium (Ti) on the substrate, Charges based on the pyroelectric effect are generated on the surface due to temperature changes, and the charge distribution is not uniform, causing fluctuations in, for example, switching characteristics of the waveguide type optical device. FIG. 5a shows a cross-sectional view of a conventional waveguide, in which a Ti diffusion layer 2 is formed on a substrate 1 made of a Z plate LiNbO 3 to form a waveguide, and a SiO 2 layer is formed on the top surface of the waveguide.
A buffer layer 3 is formed, and a plurality of electrodes 4 made of aluminum, for example, are formed on the upper surface of the buffer layer 3. When the temperature is increased in this optical waveguide, Fig. 5b
As shown in , the polarization state of the substrate 1 made of Z-plate LiNbO 3 changes due to the pyroelectric effect, so that − charges corresponding to the + charges generated on the surface of the substrate 1 are supplied from the outside to the bottom surface of the electrode 4. will be done.
Therefore, an electric field 5 as shown in the figure is generated within the substrate 1 from between the electrodes without the electrode 4 toward the electrode 4. The waveguide optical device is capable of performing, for example, a switch operation by changing the refractive index of the waveguide made of the Ti diffusion layer 2 by applying an electric field between the electrodes. When the electric field 5 is generated as described above, it has a great effect on the operating point, such as the switching characteristics, of the waveguide optical device.

従つて、従来はこの特性変動を防止するため
に、導波路の構成及び電極の構成等を温度変化に
鈍感な構成としている場合が多い。
Therefore, conventionally, in order to prevent this characteristic variation, the structure of the waveguide, the structure of the electrodes, etc. are often made insensitive to temperature changes.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上記従来の構成では、素子構造
が限定される上に、昇温効果による導波路光デイ
バイスの特性変動を充分には防止できないという
問題があつた。従つて、本発明は簡単な構成によ
り、焦電効果により発生した電荷が導波路光デイ
バイスの特性に影響を与えることを充分に防止で
きるようにした導波路光デイバイスを提供するこ
とを目的とする。
However, the above-mentioned conventional configuration has the problem that not only the element structure is limited, but also characteristic fluctuations of the waveguide optical device due to the temperature increase effect cannot be sufficiently prevented. Therefore, it is an object of the present invention to provide a waveguide optical device that has a simple configuration and can sufficiently prevent charges generated by the pyroelectric effect from affecting the characteristics of the waveguide optical device. .

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、焦電極効果を有する結晶体か
らなる基板に形成された導波路と、該導波路近く
の該基板上に設けられ電界を制御することによつ
て前記導波路の屈折率を変化させるための複数の
電極と、前記基板上の少なくとも前記電極間で該
電極が設けられていない部分に、該電極と接触す
るように該電極間に膜体を具備し、該膜体は前記
基板に生じた分極による電荷に対応して逆電荷を
供給でき、かつ電極間の実質的な導通を阻止する
抵抗値を有することを特徴とする導波路光デイバ
イスを提供するものである。
According to the present invention, a waveguide is formed on a substrate made of a crystal having a pyroelectrode effect, and the refractive index of the waveguide is controlled by controlling an electric field provided on the substrate near the waveguide. a plurality of electrodes for changing, and a film body between the electrodes so as to be in contact with the electrodes at least in a portion of the substrate where the electrodes are not provided between the electrodes, the film body being The present invention provides a waveguide optical device that is capable of supplying an opposite charge in response to the charge caused by polarization generated in a substrate and has a resistance value that prevents substantial conduction between electrodes.

〔作用〕[Effect]

電極間に導電性をわずかに与えた材料を形成す
ることにより、焦電効果により発生した電荷が電
極部に滞留しないようにすることにより、昇温に
よつて導波路に印加する電界が変化することを防
止し、これによつて導波路光デイバイスの特性が
変動することを防止したものである。
By forming a slightly conductive material between the electrodes, the electric field applied to the waveguide changes as the temperature rises, by preventing charges generated by the pyroelectric effect from staying in the electrodes. This is to prevent the characteristics of the waveguide optical device from changing.

〔実施例〕〔Example〕

以下図面を参照して本発明の実施例を説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

第2図は、導波路光デイバイスの斜視図を示す
もので、Z板LiNbO3の結晶体よりなる基板1に
Ti拡散層よりなる導波路を、例えば互いに交差
するように形成し、その交差点を挟み少なくとも
2個の電極4を配設し、この電極に印加される電
界を変化することにより、導波路の屈折率を変化
させて光路のスイツチング動作等を行せるもので
ある。
Figure 2 shows a perspective view of a waveguide optical device, in which a substrate 1 made of a Z-plate LiNbO 3 crystal is
Waveguides made of Ti diffused layers are formed so as to cross each other, for example, and at least two electrodes 4 are arranged across the intersections, and by changing the electric field applied to these electrodes, the waveguide can be refracted. It is possible to perform optical path switching operations by changing the ratio.

第1図a及びbは本発明の導波路光デイバイス
の1実施例の断面図を示すものであり、第5図
a,bと同一部分は同一番号を付して説明を省略
する。基板1にTi拡散層2により導波路を形成
しその上面に2000ÅのSiO2膜をバツフア層3と
して形成し、次に3000Åのアルミニウムからなる
電極4を少なくとも2個形成し、バツフア層3と
電極4の上面に1000Å厚さのITOからなる透明な
膜体6をスパツタリングによりコーテイングす
る。その結果、ギヤプ5μm、長さ10mmの電極間
抵抗を従来の1013Ω以上から10〜1010Ωと下げる
ことができた。その結果昇温しても第1図bに示
すように、焦電効果により基板1に生じた分極に
よる+電荷に対応して、電極4及びITO膜6に一
様に−電荷が誘起される。従つて電荷の分布が一
様であるので、電極間から電極に向かつての電界
は発生することはない。このため昇温しても、そ
れによつて電極4から導波路に及ぼされる電界は
変化しないことになるので、昇温による導波路光
デイバイスの特性の変動は防止できる。なお、膜
体6の抵抗は、低すぎると、導波路に電極4から
電界を印加したとき、膜体6を介して電極4間に
大電流が流れてしまいデイバイスの破壊を生じて
しまう。従つてこのことを考慮して膜体6の抵抗
値を選択する。
FIGS. 1a and 1b show cross-sectional views of one embodiment of the waveguide optical device of the present invention, and the same parts as those in FIGS. 5a and 5b are given the same numbers and the explanation will be omitted. A waveguide is formed on the substrate 1 by a Ti diffusion layer 2, and a 2000 Å SiO 2 film is formed as a buffer layer 3 on the top surface of the waveguide. Next, at least two electrodes 4 made of 3000 Å aluminum are formed, and the buffer layer 3 and the electrodes are formed. A transparent film body 6 made of ITO with a thickness of 1000 Å is coated on the upper surface of 4 by sputtering. As a result, we were able to reduce the interelectrode resistance with a gap of 5 μm and a length of 10 mm from the conventional 10 13 Ω or more to 10 to 10 10 Ω. As a result, even if the temperature rises, negative charges are uniformly induced in the electrode 4 and the ITO film 6 in response to the positive charges due to polarization generated in the substrate 1 due to the pyroelectric effect, as shown in Figure 1b. . Therefore, since the charge distribution is uniform, no electric field is generated from between the electrodes toward the electrodes. Therefore, even if the temperature rises, the electric field applied from the electrode 4 to the waveguide does not change, so that fluctuations in the characteristics of the waveguide optical device due to temperature rise can be prevented. Note that if the resistance of the membrane body 6 is too low, when an electric field is applied to the waveguide from the electrodes 4, a large current will flow between the electrodes 4 through the membrane body 6, resulting in destruction of the device. Therefore, the resistance value of the membrane body 6 is selected in consideration of this fact.

第3図には本発明の導波路光デイバイスの他の
実施例を示す。ITO膜体7を、バツフア層3の上
面に一様にコーテイングした後、そのITO膜体7
の上面に複数の電極4を形成したものである。こ
の場合も第1図a,bに示した実施例と同様の効
果を生ずる。
FIG. 3 shows another embodiment of the waveguide optical device of the present invention. After uniformly coating the ITO film body 7 on the upper surface of the buffer layer 3, the ITO film body 7 is
A plurality of electrodes 4 are formed on the upper surface. In this case as well, effects similar to those of the embodiment shown in FIGS. 1a and 1b are produced.

第4図は本発明による実施例と従来例との温度
変化による動作点の変動を対比して示したもの
で、特性Aは、従来の装置に係るものでITO膜体
をチツプ表面に塗布しなかつた場合には、温度変
化に応じて動作点が大きく変動した。これに対し
て同図の特性Bに示すように、本発明に係る実施
例に基づいて、ITO膜体をチツプ表面に塗布した
後は、温度は変化しても動作点にはほとんど変動
が見られなかつた。
Figure 4 shows a comparison of operating point fluctuations due to temperature changes between the embodiment according to the present invention and the conventional example. In the case where the temperature change was not present, the operating point varied greatly depending on the temperature change. On the other hand, as shown in characteristic B in the figure, after applying the ITO film to the chip surface based on the embodiment of the present invention, there is almost no change in the operating point even if the temperature changes. I couldn't help it.

上記実施例では膜体6あるいは7としてITOを
用いたが、電荷を誘起する物質であれば、SnO2
或いはSi或いはSiO2に金属をドープしたもの等
を用いても同様の効果がある。さらに膜体6とし
て静電防止材を塗布してもよい。
In the above embodiment, ITO was used as the film body 6 or 7, but if it is a substance that induces electric charges, SnO 2
Alternatively, the same effect can be obtained by using Si or SiO 2 doped with a metal. Further, an antistatic material may be applied as the film body 6.

〔発明の効果〕〔Effect of the invention〕

本発明によれば昇温して、焦電効果によつて
LiNbO3の基板に電荷が変動しても、これによつ
て基板及び導波路の電界が変動することを防止で
きるので、昇温による特性の変動を抑制すること
のできる導波路光デイバイスを提供することがで
きる。
According to the present invention, the temperature is increased and the pyroelectric effect
To provide a waveguide optical device capable of suppressing changes in characteristics due to temperature rise, since even if electric charge changes on a LiNbO 3 substrate, the electric field of the substrate and waveguide can be prevented from changing. be able to.

【図面の簡単な説明】[Brief explanation of drawings]

第1図a及びbはそれぞれ本発明の一実施例に
係る導波路光デイバイスの断面図、第2図は導波
路光デイバイスの斜視図、第3図は本発明の導波
路光デイバイスの他の実施例の断面図、第4図は
本発明の実施例と従来例との特性を対比して示す
特性図、第5図a及びbは従来の導波路光デイバ
イスの断面図である。 1……Z板LiNbO3基板、2……Ti拡散層、3
……バツフア層、4……電極、5……電界、6,
7……膜体。
1A and 1B are sectional views of a waveguide optical device according to an embodiment of the present invention, FIG. 2 is a perspective view of the waveguide optical device, and FIG. 3 is a cross-sectional view of another waveguide optical device of the present invention. FIG. 4 is a characteristic diagram comparing the characteristics of the embodiment of the present invention and a conventional example, and FIGS. 5a and 5b are sectional views of a conventional waveguide optical device. 1...Z plate LiNbO 3 substrate, 2...Ti diffusion layer, 3
... Buffer layer, 4 ... Electrode, 5 ... Electric field, 6,
7...Membrane body.

Claims (1)

【特許請求の範囲】 1 焦電効果を有する結晶体からなる基板に形成
された導波路と、 該導波路近くの該基板上に設けられ電界を制御
することによつて前記導波路の屈折率を変化させ
るための複数の電極と、 前記基板上の少なくとも前記電極間で該電極が
設けられていない部分に、該電極と接触するよう
に該電極間に膜体を具備し、該膜体は前記基板に
生じた分極による電荷に対応して逆電荷を供給で
き、かつ電極間の実質的な導通を阻止する抵抗値
を有することを特徴とする導波路光デイバイス。 2 前記膜体はITOからなる透明導電膜であるこ
とを特徴とする特許請求の範囲第1項記載の導波
路光デイバイス。 3 前記膜体はSnO2の透明導電膜からなること
を特徴とする特許請求の範囲第1項記載の導波路
光デイバイス。 4 前記膜体はSiからなることを特徴とする特許
請求の範囲第1項記載の導波路光デイバイス。 5 前記膜体はSiO2に金属をドーピングした材
料からなることを特徴とする特許請求の範囲第1
項記載の導波路光デイバイス。 6 前記膜体は静電防止材からなることを特徴と
する特許請求の範囲第1項記載の導波路光デイバ
イス。 7 前記基板はLiNbO3からなることを特徴とす
る特許請求の範囲第1項から第7項のいずれかに
記載の導波路光デイバイス。 8 前記膜体は前記導波路の形成された前記基板
の上面に一様に形成され、該基板上に該膜体を介
して前記電極を形成してなることを特徴とする特
許請求の範囲第1項記載の導波路光デイバイス。
[Scope of Claims] 1. A waveguide formed on a substrate made of a crystal having a pyroelectric effect, and a refractive index of the waveguide provided on the substrate near the waveguide by controlling an electric field. a plurality of electrodes for changing the temperature; a membrane body is provided between the electrodes so as to be in contact with the electrodes at least in a portion of the substrate where the electrodes are not provided between the electrodes, the membrane body being in contact with the electrodes; A waveguide optical device, characterized in that it can supply an opposite charge in response to the charge caused by polarization generated in the substrate, and has a resistance value that prevents substantial conduction between electrodes. 2. The waveguide optical device according to claim 1, wherein the film body is a transparent conductive film made of ITO. 3. The waveguide optical device according to claim 1, wherein the film body is made of a transparent conductive film of SnO2 . 4. The waveguide optical device according to claim 1, wherein the film body is made of Si. 5. Claim 1, wherein the film body is made of a material in which SiO 2 is doped with a metal.
The waveguide optical device described in . 6. The waveguide optical device according to claim 1, wherein the film body is made of an antistatic material. 7. The waveguide optical device according to any one of claims 1 to 7, wherein the substrate is made of LiNbO 3 . 8. The film body is formed uniformly on the upper surface of the substrate on which the waveguide is formed, and the electrode is formed on the substrate via the film body. The waveguide optical device according to item 1.
JP21402485A 1985-09-27 1985-09-27 Optical waveguide device Granted JPS6273207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21402485A JPS6273207A (en) 1985-09-27 1985-09-27 Optical waveguide device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21402485A JPS6273207A (en) 1985-09-27 1985-09-27 Optical waveguide device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6198721A Division JP2545701B2 (en) 1994-08-23 1994-08-23 Method for manufacturing waveguide optical device

Publications (2)

Publication Number Publication Date
JPS6273207A JPS6273207A (en) 1987-04-03
JPH0578016B2 true JPH0578016B2 (en) 1993-10-27

Family

ID=16649009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21402485A Granted JPS6273207A (en) 1985-09-27 1985-09-27 Optical waveguide device

Country Status (1)

Country Link
JP (1) JPS6273207A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316713A (en) * 1995-05-23 1996-11-29 Nippon Denki Syst Kensetsu Kk Antenna integrating support pole
EP0813093A1 (en) * 1996-06-14 1997-12-17 Sumitomo Osaka Cement Co., Ltd. Optical waveguide device
WO2008117449A1 (en) 2007-03-27 2008-10-02 Fujitsu Limited Optical device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278931U (en) * 1988-12-05 1990-06-18
JPH0333069U (en) * 1989-08-10 1991-04-02
JPH03127022A (en) * 1989-10-13 1991-05-30 Nippon Telegr & Teleph Corp <Ntt> Waveguide type optical element
JP2867560B2 (en) * 1990-03-02 1999-03-08 富士通株式会社 Optical waveguide device
JPH0816746B2 (en) * 1993-05-31 1996-02-21 日本電気株式会社 Optical waveguide device and manufacturing method thereof
US5388170A (en) * 1993-11-22 1995-02-07 At&T Corp. Electrooptic device structure and method for reducing thermal effects in optical waveguide modulators
JPH07294759A (en) * 1994-04-21 1995-11-10 Nec Corp Light control device and its production
JP2894961B2 (en) * 1994-11-18 1999-05-24 日本電気株式会社 Light control device
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JPH08316713A (en) * 1995-05-23 1996-11-29 Nippon Denki Syst Kensetsu Kk Antenna integrating support pole
EP0813093A1 (en) * 1996-06-14 1997-12-17 Sumitomo Osaka Cement Co., Ltd. Optical waveguide device
WO2008117449A1 (en) 2007-03-27 2008-10-02 Fujitsu Limited Optical device

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