JPH057819B2 - - Google Patents
Info
- Publication number
- JPH057819B2 JPH057819B2 JP58153285A JP15328583A JPH057819B2 JP H057819 B2 JPH057819 B2 JP H057819B2 JP 58153285 A JP58153285 A JP 58153285A JP 15328583 A JP15328583 A JP 15328583A JP H057819 B2 JPH057819 B2 JP H057819B2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- detector
- secondary electrons
- electron beam
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、高分解能像観察に好適な二次電子検
出器を備えた電子線装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an electron beam apparatus equipped with a secondary electron detector suitable for high-resolution image observation.
電子線をできるだけ細く絞つて高分解能な二次
電子像を得ようとする場合、レンズはできるだけ
短焦点距離で用いる必要がある。そのために、第
１図に示すような構成のものが考えられている。
試料２はレンズ１の内部に配置され、試料から出
てきた二次電子は検出器３で検出する。
In order to obtain a high-resolution secondary electron image by focusing the electron beam as narrowly as possible, it is necessary to use a lens with a focal length as short as possible. For this purpose, a configuration as shown in FIG. 1 has been considered.
A sample 2 is placed inside a lens 1, and a detector 3 detects secondary electrons coming out of the sample.
しかし、本構成では、二次電子はレンズ１の磁
場内を通過し、かつエネルギーが入射電子より極
めて弱いために、レンズの磁場に強く束縛され
る。したがつて、検出器３で発生させた電界によ
り二次電子を検出器側に引つぱつても、試料２よ
り発生した二次電子の出射条件（出射角やエネル
ギー等）により、エネルギーの極めて弱い二次電
子７は検出器３に入射するが、比較的高いエネル
ギーの二次電子８は、周辺の部材（例えば、偏向
器４の支持台５）に衝突して検出器３に入射しな
い。特に、検出器３の電界は支持台５やレンズ１
によつて二次電子軌道上まで到達し難いこともも
う一つの原因である。すなわち、本構成の二次電
子収率は、極めて悪いという欠点がある。 However, in this configuration, the secondary electrons pass through the magnetic field of the lens 1 and have much weaker energy than the incident electrons, so they are strongly bound by the magnetic field of the lens. Therefore, even if the electric field generated by the detector 3 pulls the secondary electrons toward the detector, the energy level may vary depending on the emission conditions (emission angle, energy, etc.) of the secondary electrons generated from the sample 2. The weak secondary electrons 7 enter the detector 3, but the relatively high-energy secondary electrons 8 collide with surrounding members (for example, the support base 5 of the deflector 4) and do not enter the detector 3. In particular, the electric field of the detector 3 is
Another reason is that it is difficult for the secondary electrons to reach the orbit. That is, the secondary electron yield of this structure is extremely poor.
本発明の目的は、高分解能二次電子像を得る際
に、高収率な二次電子検出器を具備した電子線装
置を提供することにある。
An object of the present invention is to provide an electron beam apparatus equipped with a high-yield secondary electron detector when obtaining a high-resolution secondary electron image.
高収率化とは、二次電子をできるだけ多く検出
器に入射させることである。収率の悪い原因は、
二次電子がレンズ磁場に強く束縛されることと検
出器の電界が十分に浸透しないことである。
Increasing the yield means allowing as many secondary electrons as possible to enter the detector. The reason for the poor yield is
The secondary electrons are strongly bound by the lens magnetic field, and the electric field of the detector does not penetrate sufficiently.
したがつて、本発明では、別手段により二次電
子を検出器に入射させるように構成したものであ
る。 Therefore, in the present invention, the secondary electrons are made to enter the detector by another means.
以下、本発明を実施例を用いて説明する。 The present invention will be explained below using examples.
第２図は、本発明の一実施例を示す図である。 FIG. 2 is a diagram showing an embodiment of the present invention.
本発明の構成は、従来の検出器３とレンズ１の
間に二次電子を偏向するための偏向器６を挿入し
たものである。この位置でのレンズ磁場は比較的
弱いために二次電子を束縛する力は小さい。ま
た、二次電子は一次電子に比べてエネルギーが極
めて小さい。したがつて、弱い偏向磁場で二次電
子を偏向することができる。このような偏向磁場
に対して一次電子はエネルギーが高いためにほと
んど偏向されない。 The configuration of the present invention is such that a deflector 6 for deflecting secondary electrons is inserted between a conventional detector 3 and a lens 1. Since the lens magnetic field at this position is relatively weak, the force that binds the secondary electrons is small. Furthermore, secondary electrons have extremely low energy compared to primary electrons. Therefore, secondary electrons can be deflected with a weak deflection magnetic field. Because primary electrons have high energy, they are hardly deflected by such a deflecting magnetic field.
すなわち、二次電子のみを検出器３の方向に偏
向させ、従来検出器に入射しなかつた二次電子８
をも検出できるようになる。したがつて、二次電
子収率は向上する効果がある。 In other words, only the secondary electrons are deflected in the direction of the detector 3, and the secondary electrons 8 that have not conventionally entered the detector are
can also be detected. Therefore, there is an effect of improving the secondary electron yield.
本発明における偏向器６は、磁界型偏向器と静
電型偏向器とを組み合わせることによつて構成さ
れている。 The deflector 6 in the present invention is constructed by combining a magnetic field type deflector and an electrostatic type deflector.
第３図のように磁界型、静電型を直交させて配
置し、磁界Ｂと電界Ｅとの関係が、
となるように動作させる。ここで、V1：一次電
子のエネルギー、ｅ：電荷、ｍ：電子の質量、ｉ
＝√−１である。このとき、一次電子は何ら偏向
作用を受けない。このとき、二次電子に対しては
となる。ここで、V2は二次電子のエネルギーで
あり、V2≪V1である。すなわち、二次電子に関
しては静電型のみの動作とほとんど変らない作用
を受ける。したがつて、二次電子は検出器３の方
向に偏向される。本構成は、一次電子線が低加速
領域で使用する場合に極めて有効となる。第３図
において、磁界型偏向器は、鞍型コイル１１で示
したが、これに限るものではない。また、静電型
の偏向板１２は平行平板で示したが、例えば円筒
状のものでもよいことは言うまでもない。 As shown in Figure 3, the magnetic field type and electrostatic type are arranged orthogonally, and the relationship between the magnetic field B and the electric field E is as follows. Operate it so that Here, V 1 : Energy of primary electron, e: Charge, m: Mass of electron, i
=√−1. At this time, the primary electrons are not subjected to any deflection action. At this time, for secondary electrons, becomes. Here, V 2 is the energy of secondary electrons, and V 2 << V 1 . In other words, with regard to secondary electrons, the operation is almost the same as that of the electrostatic type only. The secondary electrons are therefore deflected in the direction of the detector 3. This configuration is extremely effective when the primary electron beam is used in a low acceleration region. In FIG. 3, the magnetic field type deflector is shown as a saddle-shaped coil 11, but the present invention is not limited to this. Further, although the electrostatic type deflection plate 12 is shown as a parallel flat plate, it goes without saying that it may be cylindrical, for example.
本発明において、レンズ形状、試料位置等は第
３図のものに限るものではない。要は、試料から
の二次電子をレンズの上方の検出器で検出する構
成なら、どのような構成でも適用できる。 In the present invention, the lens shape, sample position, etc. are not limited to those shown in FIG. In short, any configuration can be applied as long as the secondary electrons from the sample are detected by a detector above the lens.
本発明によれば、二次電子を効率よく検出でき
るので、高分解能な像観察が容易にできる効果が
ある。
According to the present invention, since secondary electrons can be detected efficiently, there is an effect that high-resolution image observation can be easily performed.
第１図は、従来の構成を示した断面図、第２図
は本発明の一実施例を示した断面図、第３図は、
本発明における偏向器の一具体例を示した図であ
る。
１……レンズ、２……試料、３……検出器、４
……偏向器、５……支持台、６……二次電子用偏
向器、７，８……二次電子軌道、１１……磁界型
偏向器、１２……静電型偏向器。
Fig. 1 is a sectional view showing a conventional configuration, Fig. 2 is a sectional view showing an embodiment of the present invention, and Fig. 3 is a sectional view showing a conventional configuration.
FIG. 3 is a diagram showing a specific example of a deflector in the present invention. 1... Lens, 2... Sample, 3... Detector, 4
... Deflector, 5... Support stand, 6... Secondary electron deflector, 7, 8... Secondary electron orbit, 11... Magnetic field type deflector, 12... Electrostatic type deflector.
Claims (1)
絞つて試料に照射するための電子レンズと、該電
子レンズと上記電子銃との間の上記一次電子線の
通路外に設けられ上記一次電子線の照射によつて
上記試料から放出された二次電子を検出するため
の二次電子検出器と、上記電子レンズの上方に設
けられ上記試料から放出された二次電子を上記二
次電子検出器の方向に偏向させるための偏向手段
とを具備してなる電子線装置において、上記の偏
向手段は、磁界型偏向器と静電型偏向器とを組み
合わせて構成されてなり、かつ上記磁界型偏向器
の偏向磁界が上記一次電子線に及ぼす偏向作用と
上記静電型偏向器の偏向電界が上記一次電子線に
及ぼす偏向作用とが互いに逆方向で打消し合うよ
うに設定されてなることを特徴とする電子線装
置。1. An electron gun, an electron lens for narrowing the primary electron beam from the electron gun and irradiating the sample, and an electron lens provided outside the path of the primary electron beam between the electron lens and the electron gun; a secondary electron detector for detecting secondary electrons emitted from the sample by irradiation with an electron beam; and a secondary electron detector provided above the electron lens to detect secondary electrons emitted from the sample. In an electron beam apparatus comprising a deflection means for deflecting the beam in the direction of a detector, the deflection means is configured by combining a magnetic field type deflector and an electrostatic type deflector, and The deflection effect exerted on the primary electron beam by the deflection magnetic field of the electrostatic deflector and the deflection effect exerted on the primary electron beam by the deflection electric field of the electrostatic deflector are set so as to cancel each other out in opposite directions. An electron beam device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58153285A JPS6047358A (en) | 1983-08-24 | 1983-08-24 | Electron ray device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58153285A JPS6047358A (en) | 1983-08-24 | 1983-08-24 | Electron ray device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6047358A JPS6047358A (en) | 1985-03-14 |
| JPH057819B2 true JPH057819B2 (en) | 1993-01-29 |
Family
ID=15559127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58153285A Granted JPS6047358A (en) | 1983-08-24 | 1983-08-24 | Electron ray device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6047358A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60212953A (en) * | 1984-04-06 | 1985-10-25 | Hitachi Ltd | electron beam equipment |
| GB8604181D0 (en) * | 1986-02-20 | 1986-03-26 | Texas Instruments Ltd | Electron beam apparatus |
| JP2918554B2 (en) * | 1988-04-08 | 1999-07-12 | 株式会社日立製作所 | Electric field type separator for charged particle beam |
-
1983
- 1983-08-24 JP JP58153285A patent/JPS6047358A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6047358A (en) | 1985-03-14 |
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