JPH0579188B2 - - Google Patents
Info
- Publication number
- JPH0579188B2 JPH0579188B2 JP11413086A JP11413086A JPH0579188B2 JP H0579188 B2 JPH0579188 B2 JP H0579188B2 JP 11413086 A JP11413086 A JP 11413086A JP 11413086 A JP11413086 A JP 11413086A JP H0579188 B2 JPH0579188 B2 JP H0579188B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- molybdenum
- titanium
- forming
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 37
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 33
- 229910052750 molybdenum Inorganic materials 0.000 claims description 33
- 239000011733 molybdenum Substances 0.000 claims description 33
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 21
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910001295 No alloy Inorganic materials 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920006268 silicone film Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明はシヨツトキ・バリア・ダイオード等の
電極形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for forming electrodes of shotgun barrier diodes and the like.
(ロ) 従来の技術
一般にシヨツトキ・バリア・ダイオード等の製
造に於いて、電極材料としてモリブデン（Mo）
を用いる。例えば特開昭59−211285号公報が詳し
く、第２図イに示す如く、半導体基板１の開孔部
にモリブデン膜２を形成し、次に第２図ロに示す
如く、前記モリブデン膜２の上に電極例えばアル
ミニウムを形成する際にニツケル（Ni）膜４を
形成し、モリブデン膜２とニツケル膜４とを熱処
理することで、後工程の熱ストレスにより膜剥れ
等を防止していた。(b) Conventional technology Molybdenum (Mo) is generally used as an electrode material in the manufacture of shotguns, barrier diodes, etc.
Use. For example, Japanese Patent Laid-Open No. 59-211285 describes in detail that as shown in FIG. 2A, a molybdenum film 2 is formed in the opening of the semiconductor substrate 1, and then as shown in FIG. A nickel (Ni) film 4 is formed when an electrode such as aluminum is formed thereon, and the molybdenum film 2 and the nickel film 4 are heat-treated to prevent film peeling or the like due to thermal stress in a post-process.
しかし前記モリブデン膜２とニツケル膜４とは
接着性が悪く、更に前記モリブデン膜２とニツケ
ル膜４の間にチタン間を形成していた。 However, the adhesion between the molybdenum film 2 and the nickel film 4 was poor, and a titanium gap was formed between the molybdenum film 2 and the nickel film 4.
(ハ) 発明が解決しようとする問題点
一般にモリブデン膜２とニツケル膜４はリン酸
と硝酸の含んだ水溶液をエツチング液として使用
でき、チタン膜は弗酸水溶液をエツチング液とし
て使用できる。(c) Problems to be Solved by the Invention In general, an aqueous solution containing phosphoric acid and nitric acid can be used as an etching solution for the molybdenum film 2 and the nickel film 4, and a hydrofluoric acid aqueous solution can be used as an etching solution for the titanium film.
しかし実際はモリブデン膜２とシリコンとのシ
ヨツトキー接合形成用アニール工程において、モ
リブデン膜２とチタン膜との間に合金層が形成さ
れるために前述したモリブデン膜２のエツチング
液が使用できず、別のエツチング液を必要とし
た。 However, in reality, an alloy layer is formed between the molybdenum film 2 and the titanium film in the annealing process for forming a Schottky junction between the molybdenum film 2 and silicon, so the etching solution for the molybdenum film 2 described above cannot be used, and a different etching solution is used. Required etching solution.
(ニ) 問題点を解決するための手段
本発明は斯る問題点に鑑みてなされ、少なくと
も半導体基板１上にモリブデン膜２を形成する工
程と、該モリブデン膜２を熱処理する工程と、前
記モリブデン膜２上にチタン膜３を形成する工程
と、該チタン膜３上に金属膜４を形成する工程
と、該金属膜４・チタン膜３・モリブデン膜２を
蝕刻する工程とにより解決するものである。(d) Means for Solving the Problems The present invention has been made in view of these problems, and includes at least a step of forming a molybdenum film 2 on a semiconductor substrate 1, a step of heat-treating the molybdenum film 2, and a step of heat-treating the molybdenum film 2. This problem is solved by forming a titanium film 3 on the film 2, forming a metal film 4 on the titanium film 3, and etching the metal film 4, titanium film 3, and molybdenum film 2. be.
(ホ) 作用
前述した如く、モリブデン膜２を形成し該モリ
ブデン膜２とシリコンとのシヨツトキー合金化ア
ニール工程を行つた後、チタン膜３の形成を行う
ので、熱処理に伴う両者の合金が形成されない。
従つて、従来のエツチング液で食刻することがで
きる。(E) Effect As mentioned above, since the titanium film 3 is formed after the molybdenum film 2 is formed and the Schottky alloying annealing process is performed between the molybdenum film 2 and silicon, an alloy of the two is not formed due to heat treatment. .
Therefore, it can be etched using a conventional etching solution.
(ヘ) 実施例
一般に高融点金属、例えばモリブデン膜を配線
材料に用いると多結晶シリンコ膜に比べて電気抵
抗が２桁程低い。一方アルミニウムに比べて数倍
高いが、アルミニウムに現われるエレクトロマイ
グレーシヨンが全んど起こらないため、現在色々
な所で使用されつつある。(F) Example Generally, when a high melting point metal such as a molybdenum film is used as a wiring material, the electrical resistance is about two orders of magnitude lower than that of a polycrystalline silicone film. On the other hand, it is several times more expensive than aluminum, but because the electromigration that occurs with aluminum does not occur at all, it is now being used in various places.
次に本発明の電極形成法である電極形成法を第
１図を参照しながら説明する。 Next, the electrode forming method of the present invention will be explained with reference to FIG.
先ず第１図イに示す如く半導体基板１上にモリ
ブデン膜２を形成する。 First, as shown in FIG. 1A, a molybdenum film 2 is formed on a semiconductor substrate 1.
ここではエレクトロン・ビーム蒸着法により数
百Åの膜厚で形成する。その後、本発明の特徴と
なるように、モリブデン膜２とシリコンとのシヨ
ツトキー合金化のための熱処理を先に行つてお
く。この熱処理は、例えば400℃〜500℃の数十分
の熱処理である。この高温熱処理を先に行つてお
けば、後はアニール温度より処理温度が低い蒸着
またスパツタ法によりチタン、ニツケル膜を付着
することが可能である。つまり、チタン、ニツケ
ルを付着してからパターニングを行うまでに高温
熱処理を配置する必要がないので、モリブデンと
チタンとの合金層形成を防止できる。 Here, the film is formed to a thickness of several hundred angstroms by electron beam evaporation. Thereafter, as a feature of the present invention, heat treatment is first performed to form a Schottky alloy between the molybdenum film 2 and silicon. This heat treatment is, for example, a heat treatment of several tens of minutes at 400°C to 500°C. If this high-temperature heat treatment is performed first, then it is possible to deposit a titanium or nickel film by vapor deposition or sputtering, which uses a treatment temperature lower than the annealing temperature. In other words, it is not necessary to carry out high-temperature heat treatment after depositing titanium and nickel before patterning, so formation of an alloy layer of molybdenum and titanium can be prevented.
次に第１図ロに示す如く前記モリブデン膜２上
に順次チタン膜３、ニツケル膜４を形成する。 Next, as shown in FIG. 1B, a titanium film 3 and a nickel film 4 are sequentially formed on the molybdenum film 2.
ここでは前記モリブデン膜２と同様にエレクト
ロン・ビーム蒸着法により夫々数百Åの膜厚で形
成する。 Here, like the molybdenum film 2, each film is formed to a thickness of several hundred angstroms by the electron beam evaporation method.
最後に第１図ハに示す如く、前記ニツケル膜
４、チタン膜３、モリブデン膜２を順次所望形状
に蝕刻する。 Finally, as shown in FIG. 1C, the nickel film 4, titanium film 3, and molybdenum film 2 are sequentially etched into a desired shape.
ここでは先ず前記ニツケル膜４をリン酸・硝酸
の含んだ水溶液で蝕刻し、次に前記チタン膜３を
弗酸水溶液で蝕刻し、更に前記モリブデン膜２を
ニツケル膜４のエツチング液で蝕刻する。 Here, the nickel film 4 is first etched with an aqueous solution containing phosphoric acid and nitric acid, then the titanium film 3 is etched with a hydrofluoric acid aqueous solution, and the molybdenum film 2 is etched with an etching solution for the nickel film 4.
本工程は本発明の特徴とする所である。従来で
は前述した如く、モリブデンとチタンの合金層が
形成されるために、前記モリブデン膜２上の合金
属をニツケル膜４のエツチング液でエツチングす
ることが不可能であつたが、前述の熱処理工程で
モリブデンとチタンの合金層が形成されないため
に容易にエツチング可能となる。 This step is a feature of the present invention. Conventionally, as described above, since an alloy layer of molybdenum and titanium is formed, it has been impossible to etch the alloy metal on the molybdenum film 2 with the etching solution for the nickel film 4. Since no alloy layer of molybdenum and titanium is formed in this process, it can be easily etched.
従つて更に電極配線としてアルミニウムを使用
してもアルミニウムによるスパイクがニツケル膜
４で防止でき、また前記ニツケル膜４とモリブデ
ン膜２は前記チタン膜３を中間に形成することで
良好に被覆することが可能となる。 Therefore, even if aluminum is used as the electrode wiring, spikes caused by aluminum can be prevented by the nickel film 4, and the nickel film 4 and the molybdenum film 2 can be well coated by forming the titanium film 3 in between. It becomes possible.
(ト) 発明の効果
以上の説明からも明らかな如く、前記モリブデ
ン膜２を熱処理することで、従来より使用されて
いるエツチング液で良好にエツチングでき、更に
はアルミスパイクを防止でき密着性の良い電極を
形成でき、信頼性を向上させることができる。(g) Effects of the Invention As is clear from the above explanation, by heat-treating the molybdenum film 2, it can be etched well with conventionally used etching solutions, and furthermore, aluminum spikes can be prevented and good adhesion can be achieved. Electrodes can be formed and reliability can be improved.
また工程数も簡略化できるためコストを削減で
きる。 In addition, the number of steps can be simplified, so costs can be reduced.
第１図イ乃至第１図ハは本発明の電極形成法を
説明する断面図、第２図イ乃至第２図ハは従来の
電極形成法を説明する断面図である。
１は半導体基板、２ほモリブデン膜、３はチタ
ン膜、４はニツケル膜である。
1A to 1C are cross-sectional views for explaining the electrode forming method of the present invention, and FIGS. 2A to 2C are cross-sectional views for explaining the conventional electrode forming method. 1 is a semiconductor substrate, 2 is a molybdenum film, 3 is a titanium film, and 4 is a nickel film.
Claims (1)
て、 半導体基板上にモリブデン膜を形成する工程
と、 該モリブデン膜を400〜500℃の温度で熱処理す
る工程と、 前記モリブデン膜上にチタン膜を形成する工程
と、 該チタン膜上にニツケル膜を形成する工程と、 前記ニツケル膜をリン酸・硝酸水溶液で食刻
し、次に前記チタン膜を弗酸水溶液で食刻し、さ
らに前記モリブデン膜をリン酸・硝酸水溶液で食
刻する工程と、 前記ニツケル膜の上にアルミ電極を形成する工
程とを具備することを特徴とする電極形成方法。[Scope of Claims] 1. A method for forming an electrode for shot key connection, which comprises: forming a molybdenum film on a semiconductor substrate; heat-treating the molybdenum film at a temperature of 400 to 500°C; and the molybdenum film. a step of forming a titanium film on the titanium film; a step of forming a nickel film on the titanium film; etching the nickel film with a phosphoric acid/nitric acid aqueous solution; and then etching the titanium film with a hydrofluoric acid aqueous solution. . A method for forming an electrode, further comprising: etching the molybdenum film with an aqueous phosphoric acid/nitric acid solution; and forming an aluminum electrode on the nickel film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11413086A JPS62295452A (en) | 1986-05-19 | 1986-05-19 | Forming method for electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11413086A JPS62295452A (en) | 1986-05-19 | 1986-05-19 | Forming method for electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62295452A JPS62295452A (en) | 1987-12-22 |
| JPH0579188B2 true JPH0579188B2 (en) | 1993-11-01 |
Family
ID=14629886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11413086A Granted JPS62295452A (en) | 1986-05-19 | 1986-05-19 | Forming method for electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62295452A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2687017B2 (en) * | 1989-08-14 | 1997-12-08 | サンケン電気 株式会社 | Schottky barrier semiconductor device |
-
1986
- 1986-05-19 JP JP11413086A patent/JPS62295452A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62295452A (en) | 1987-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |