JPH0580101B2 - - Google Patents
Info
- Publication number
- JPH0580101B2 JPH0580101B2 JP58094665A JP9466583A JPH0580101B2 JP H0580101 B2 JPH0580101 B2 JP H0580101B2 JP 58094665 A JP58094665 A JP 58094665A JP 9466583 A JP9466583 A JP 9466583A JP H0580101 B2 JPH0580101 B2 JP H0580101B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- field emission
- current
- emission electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 8
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明は走査型電子顕微鏡とか電子線マイクロ
アナライザ等の電子線照射型分析装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to an electron beam irradiation type analysis device such as a scanning electron microscope or an electron beam microanalyzer.
(ロ) 従来技術
走査型電子顕微鏡で、試料を電子線で照射した
場合、試料からの情報のキヤリヤとしてはＸ線、
二電子（SE）、反射電子（BE）及び試料電流
（SC）等がある。このうち二次電子は試料内の電
子が入射電子からエネルギーを受取つて飛び出す
もので比較的低エネルギーであり、反射電子は入
射電子が試料内の原子によつて散乱され再び試料
表面から飛出したもので比較的高エネルギーであ
る。試料電流は試料を照射する入射電子線電流か
ら二次電子電流と反射電子電流を引いた残りであ
り、一般にSEとBEとSCとは略同程度の値を有
しているが、夫々が試料に関して有している情報
内容は異つており、これらの信号源によつて得ら
れる映像は夫々独自の価値を有する。(b) Prior art When a sample is irradiated with an electron beam using a scanning electron microscope, X-rays,
There are two electrons (SE), backscattered electrons (BE), sample current (SC), etc. Among these, secondary electrons are electrons in the sample that receive energy from incident electrons and fly out, and have relatively low energy. Backscattered electrons are incident electrons that are scattered by atoms in the sample and fly out from the sample surface again. It has relatively high energy. The sample current is the remainder after subtracting the secondary electron current and reflected electron current from the incident electron beam current that irradiates the sample. Generally, SE, BE, and SC have approximately the same values, but each The information content possessed by these signal sources is different, and the images obtained by these signal sources each have their own value.
このようにSEとBEとSCは夫々試料に関する
情報源として夫々独自の価値を有しているが、こ
れらの検出については、SE及びBEに対してはシ
ンチレータと光電子増倍管の組合せとか半導体検
出器等を用いることができるので1000倍〜10000
倍の増幅検出が可能なので試料照射電子線電流を
小さくして電子ビーム径をきわめて小さく絞るこ
とができ、高分解能の像を得ることができるのに
対して、SCは信号形態が始めから電流であり、
SEやBEのような増幅検出ができないので、情報
源としてはＳ／Ｎ比が低いと云う難点を有してお
り、やむなく、分解能を犠牲にして試料を照射す
る電子ビームの電子線電流を大にしてSCを検出
すると云う方法を用いている。 In this way, SE, BE, and SC each have their own value as information sources about the sample, but for SE and BE, a combination of scintillator and photomultiplier tube or semiconductor detection are used. 1,000 times to 10,000 times as you can use vessels etc.
Since double amplification detection is possible, the sample irradiation electron beam current can be reduced to narrow the electron beam diameter to an extremely small size, and high-resolution images can be obtained. can be,
Since it cannot perform amplified detection like SE or BE, it has the disadvantage of a low S/N ratio as an information source, so it is unavoidable to increase the electron beam current of the electron beam that irradiates the sample at the expense of resolution. A method of detecting SC is used.
(ハ) 目的
本発明は試料電流を電界放射電子に変換するこ
とによつて増幅検出を可能にし、SCによる高分
解能の像を得ることを目的とする。(c) Purpose The purpose of the present invention is to enable amplified detection by converting a sample current into field emission electrons, and to obtain a high-resolution image by SC.
(ニ) 構成
本発明は試料に電界放射電極を接続し、この電
界放射電極を高抵抗を介してプルダウン電源に接
続し、電界放射電極に対向させてシンチレータと
光電子増倍管の組合せ或は半導体電子検出器等の
電子増幅検出器を配置し、この電子増幅検出器に
よつて、上記電界放射電極から放射される電子を
検出するようにした電子線照射型分析装置の試料
電流検出装置に係る。(D) Structure The present invention connects a field emission electrode to a sample, connects this field emission electrode to a pull-down power supply through a high resistance, and connects a scintillator and photomultiplier tube or a semiconductor to face the field emission electrode. This invention relates to a sample current detection device for an electron beam irradiation type analyzer, in which an electron amplification detector such as an electron detector is arranged, and the electron amplification detector detects electrons emitted from the field emission electrode. .
(ホ) 実施例
第１図は本発明の一実施例を示す。Ｓは試料で
あり、PEは試料を照射する電子ビームである。
Ｎは電界放射電極で針状であり、高低抗Ｒを介し
てプルタウン電源Ｌに接続してある。試料Ｓと電
界放射電極Ｎとが接続され、試料と装置本体との
間は絶縁されている。Ｃはシンチレータで電源Ｕ
のプラス側に接続されており、シンチレータＣの
背後に光電子増倍管PMが配置してある。(E) Embodiment FIG. 1 shows an embodiment of the present invention. S is the sample and PE is the electron beam that irradiates the sample.
N is a field emission electrode having a needle shape, and is connected to a pull-town power supply L via a height resistor R. The sample S and the field emission electrode N are connected, and the sample and the main body of the apparatus are insulated. C is a scintillator and power supply U
A photomultiplier tube PM is placed behind the scintillator C.
電界放射電極ＮとシンチレータＣとの間には試
料電流が０、電界放射が０とするとＵ−Ｌの電位
差があるが、電界放射電流が高抵抗Ｒを流れるの
でＲの値を適当に設定すると試料電流SCが０の
とき、電極Ｎ従つて試料Ｓの電位を略０としてお
くことができる。もつともこのことは必要条件で
はない。こゝで試料電流SCが流れると、その方
向及び大小によつて電極Ｎの電位は上下し、それ
に応じて電極Ｎから放射される電界放射電子が増
減する。この電子がシンチレータＣと光電子増倍
管PMとの組合せによつて増幅検出される。 There is a potential difference of U-L between the field emission electrode N and the scintillator C, assuming that the sample current is 0 and the field emission is 0. However, since the field emission current flows through a high resistance R, if the value of R is set appropriately. When the sample current SC is 0, the potential of the electrode N and hence the sample S can be kept at approximately 0. However, this is not a necessary condition. When the sample current SC flows here, the potential of the electrode N increases or decreases depending on its direction and magnitude, and the field emission electrons emitted from the electrode N increase or decrease accordingly. These electrons are amplified and detected by a combination of scintillator C and photomultiplier tube PM.
こゝで電極ＮとシンチレータＣとの間の電位差
をＶ、そのときの電界放射電流をｉとすると、放
射抵抗ｒ＝Ｖ／ｉが定義できる。今試料電流SC
が試料へ流れ込む方向とすると、このため試料電
位が下り、電界放射電流が増加する。SCの値を
Ｉとし、抵抗Ｒを流れる電流をI′とすると、電界
放射電流はＩ−I′であり、RI′＝ｒ（Ｉ−I′）であ
る。故に
I′＝ｒ／Ｒ＋ｒＩ
でＲ≫ｒであるとI′はきわめて小さくなり、試料
電流は殆んど全部電界放射電流に変換されること
になる。 Here, if the potential difference between the electrode N and the scintillator C is V and the field emission current at that time is i, then radiation resistance r=V/i can be defined. Now sample current SC
flows into the sample, this causes the sample potential to drop and the field emission current to increase. When the value of SC is I and the current flowing through the resistor R is I', the field emission current is I-I', and RI'=r(I-I'). Therefore, when I'=r/R+rI and R≫r, I' becomes extremely small, and almost all of the sample current is converted into field emission current.
電極Ｎの先端付近には強電界が存在しており、
ガス分子が存在しているとイオン化されてイオン
電流が流れるためSCの検出ができなくなる。イ
オンの影響は高感度にするためＲの値を大きくす
る程著るしくなるので、特に高分解能高感度を目
指すときは、第２図に示すように電極Ｎとシンチ
レータＣの部分をガラスの真空管Ｇ内に封入し、
管内を管外より更に高い真空にしておくとよい。
この場合光電子増倍管PMは真空管Ｇのガラス越
しにシンチレータＣと対向させておけばよい。 A strong electric field exists near the tip of electrode N,
If gas molecules are present, they will be ionized and an ionic current will flow, making SC detection impossible. The influence of ions becomes more significant as the value of R increases to achieve higher sensitivity. Therefore, when aiming for particularly high resolution and high sensitivity, the electrode N and scintillator C are replaced with glass vacuum tubes, as shown in Figure 2. Enclosed in G,
It is best to maintain a higher vacuum inside the tube than outside the tube.
In this case, the photomultiplier tube PM may be placed opposite the scintillator C through the glass of the vacuum tube G.
(ヘ) 効果
本発明によれば試料電流が電界放射の電子流に
変換されるので電子に対する増幅検出手段が適用
できて高感度で試料電流が検出できるため、試料
照射電子ビームの電子線電流を少くしてビーム径
を充分に小さくできるから高分解能のSC像を得
ることが可能となる。(f) Effects According to the present invention, since the sample current is converted into an electron current of field emission, an amplification detection means for electrons can be applied and the sample current can be detected with high sensitivity. Since the beam diameter can be made sufficiently small by reducing the number of beams, it becomes possible to obtain a high-resolution SC image.
第１図は本発明の一実施例の要部側面図、第２
図は本発明の他の実施例の要部側面図である。
Ｓ……試料、Ｂ……試料照射電子ビーム、Ｎ…
…電界放射電極、Ｃ……シンチレータ、PM……
光電子増倍管、Ｇ……真空管。
Figure 1 is a side view of essential parts of an embodiment of the present invention, Figure 2 is a side view of essential parts of an embodiment of the present invention;
The figure is a side view of main parts of another embodiment of the present invention. S...sample, B...sample irradiation electron beam, N...
...Field emission electrode, C...Scintillator, PM...
Photomultiplier tube, G...vacuum tube.
Claims (1)
電界放射電極に対向させて増幅型の電子検出器を
配置し、試料と上記電界放射電極とを電気的に接
続させ、上記電界放射電極から放射される電子を
上記増幅型の電子検出器によつて検出するように
したことを特徴とする電子線照射型分析装置の試
料電流検出装置。1. An amplification type electron detector is placed opposite to a field emission electrode connected to a pull-down power supply via a high resistance, and the sample and the field emission electrode are electrically connected, so that the electron detector emitted from the field emission electrode is electrically connected to the sample and the field emission electrode. A sample current detection device for an electron beam irradiation type analyzer, characterized in that the electrons detected by the sample are detected by the amplification type electron detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58094665A JPS59219844A (en) | 1983-05-27 | 1983-05-27 | Sample current detection device for electron beam irradiation type analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58094665A JPS59219844A (en) | 1983-05-27 | 1983-05-27 | Sample current detection device for electron beam irradiation type analyzer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59219844A JPS59219844A (en) | 1984-12-11 |
| JPH0580101B2 true JPH0580101B2 (en) | 1993-11-05 |
Family
ID=14116541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58094665A Granted JPS59219844A (en) | 1983-05-27 | 1983-05-27 | Sample current detection device for electron beam irradiation type analyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59219844A (en) |
-
1983
- 1983-05-27 JP JP58094665A patent/JPS59219844A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59219844A (en) | 1984-12-11 |
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