JPH058274B2 - - Google Patents
Info
- Publication number
- JPH058274B2 JPH058274B2 JP11529584A JP11529584A JPH058274B2 JP H058274 B2 JPH058274 B2 JP H058274B2 JP 11529584 A JP11529584 A JP 11529584A JP 11529584 A JP11529584 A JP 11529584A JP H058274 B2 JPH058274 B2 JP H058274B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide film
- filter
- solution
- boric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 70
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 57
- 239000000243 solution Substances 0.000 claims description 24
- 239000007864 aqueous solution Substances 0.000 claims description 15
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 15
- 239000004327 boric acid Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011148 porous material Substances 0.000 claims description 10
- 239000005368 silicate glass Substances 0.000 claims description 4
- 229910052604 silicate mineral Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 18
- 239000007788 liquid Substances 0.000 description 17
- 238000001556 precipitation Methods 0.000 description 11
- 229910002027 silica gel Inorganic materials 0.000 description 10
- 239000000741 silica gel Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052611 pyroxene Inorganic materials 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemically Coating (AREA)
- Chemical Treatment Of Metals (AREA)
Description
【発明の詳細な説明】
a 産業上の利用分野
本発明は酸化珪素被膜の製造方法に関し、特に
珪弗化水素酸の酸化珪素飽和水溶液に基材を浸漬
して基材表面に酸化珪素被膜を製造する方法(以
後析出法と略称する)の改良法に関する。Detailed Description of the Invention: a. Field of Industrial Application The present invention relates to a method for producing a silicon oxide film, and in particular to a method for producing a silicon oxide film on the surface of the base material by immersing the base material in a saturated silicon oxide aqueous solution of hydrosilicofluoric acid. This invention relates to an improved manufacturing method (hereinafter referred to as precipitation method).
b 従来技術
本発明者らは、酸化珪素被膜の製造方法とし
て、析出法を先の特許出願(特開昭57−196744,
特開昭58−161944)に示した。b. Prior Art The present inventors applied a precipitation method as a method for producing a silicon oxide film in an earlier patent application (Japanese Patent Laid-Open No. 1967-44,
It was shown in Japanese Patent Application Laid-Open No. 161944 (1982).
この酸化珪素被膜の製造方法は、0.5〜3.0モ
ル/の濃度の珪弗化水素酸に酸化珪素を飽和さ
せ、その後この珪弗化水素酸の酸化珪素飽和水溶
液1につきホウ酸を2.0×10-2モル以上添加し
た処理液に基材を浸漬し、基材表面に酸化珪素被
膜を製造する方法(特開昭57−196744)、および
該処理液にホウ酸添加をくり返し行うことによ
り、酸化珪素の過飽和状態をある程度持続させ、
酸化珪素被膜をくり返し生成する方法である。
(特開昭58−161944)
又上記性質を利用して本発明者らは、珪弗化水
素酸の酸化珪素飽和水溶液(以後処理液と略称)
を基材を浸漬する処理槽から排出し、ホウ酸を少
量づつ該排出した処理液中に連続的に添加させて
酸化珪素の過飽和状態として処理槽に戻す循環式
析出法を考案した。(特願昭58−137217)本方法
によれば前記方法(特開昭57−196744,特開昭58
−161944)よりも生産性良く(短時間で)酸化珪
素被膜が生成できる利点があつた。 This method for producing a silicon oxide film involves saturating silicon oxide with hydrosilicofluoric acid at a concentration of 0.5 to 3.0 mol/ml, and then adding 2.0 x 10 - A method of manufacturing a silicon oxide film on the surface of the substrate by immersing the substrate in a treatment solution containing 2 moles or more (Japanese Patent Application Laid-Open No. 1967-44), and by repeatedly adding boric acid to the treatment solution, silicon oxide maintain the supersaturation state to some extent,
This is a method of repeatedly forming a silicon oxide film.
(Japanese Patent Application Laid-Open No. 161944/1983) Also, by utilizing the above properties, the present inventors developed a silicon oxide saturated aqueous solution of hydrosilicofluoric acid (hereinafter abbreviated as treatment liquid).
A circulating precipitation method was devised in which boric acid is discharged from the treatment tank in which the substrate is immersed, and boric acid is continuously added little by little into the discharged treatment solution to form a supersaturated state of silicon oxide and returned to the treatment tank. (Japanese Patent Application No. 58-137217) According to this method,
-161944) had the advantage of being able to form a silicon oxide film with better productivity (in a shorter time).
しかしながら上記循環式析出法を用いて安定し
て表面形状に凹凸のない酸化珪素被膜を作成する
ためには
全処理液量に対する1分間あたりの循環液体
量が3%以上、望ましくは6%以上であるこ
と。 However, in order to stably create a silicon oxide film with no irregularities on the surface using the above-mentioned circulating precipitation method, the amount of circulating liquid per minute relative to the total amount of processing liquid must be at least 3%, preferably at least 6%. Something.
処理槽に循環される処理液を1.5μm以下の孔
径フイルターで濾過すること。 Filter the processing liquid that is circulated in the processing tank using a filter with a pore size of 1.5 μm or less.
の条件が必要であつた。The following conditions were necessary.
ここで上記条件は循環量が3%よりも少ない
と処理液の流れが遅くなるために循環用パイプ内
で酸化珪素の沈殿が生じたりフイルターの目ずま
りが生じやすくなることおよびフイルターの孔
径が1.5μmより大きくなると基材に形成される酸
化珪素被膜が凹凸を有する被膜となりやすくな
る、という理由により生じていた。 The above conditions are such that if the circulation rate is less than 3%, the flow of the processing liquid will slow down, causing precipitation of silicon oxide in the circulation pipe, clogging of the filter, and the pore size of the filter. This occurs because if the thickness is larger than 1.5 μm, the silicon oxide film formed on the base material tends to become a film with irregularities.
これらの析出法は、ガラス、セラミツクス、プ
ラスチツク、金属、半導体などの基材表面に安定
して平滑な大面積の酸化珪素被膜が焼成工程や真
空化技術を用いずに作成できる大きな利点がある
が、最も実用的と考えられる上記循環法による酸
化珪素被膜の製造方法においてもひんぱんにフイ
ルターを取替える必要があるという欠点があつ
た。 These precipitation methods have the great advantage of being able to create stable, smooth, large-area silicon oxide films on the surfaces of substrates such as glass, ceramics, plastics, metals, and semiconductors without using a firing process or vacuum technology. Even in the method for producing a silicon oxide film by the above-mentioned circulation method, which is considered to be the most practical method, there is a drawback that the filter needs to be replaced frequently.
例えば2.0モル/の珪弗化水素酸に工業用シ
リカゲルを溶解し酸化珪素の飽和溶液とした溶液
に0.5モル/のホウ酸水溶液を容量比で25:1
で混合した全量3の処理液に0.5モル/のホ
ウ酸水溶液を0.1m/分の割合で連続的に添加
混合し、毎分全処理液の3%を1000cm2の孔径
1.5μmのフイルターを用いて濾過して処理液に戻
しながら基板を処理する場合には濾過を開始して
から50時間程度で該フイルターが目づまりを起こ
して循環液量を依存することが出来なくなる欠点
があつた。 For example, dissolve industrial silica gel in 2.0 mol/hydrosilicic acid to make a saturated solution of silicon oxide, and add 0.5 mol/l boric acid aqueous solution at a volume ratio of 25:1.
0.5 mol/aqueous boric acid solution was continuously added and mixed at a rate of 0.1 m/min to the total amount of the treatment solution mixed in step 3 .
If the substrate is processed while being filtered using a 1.5 μm filter and returned to the processing solution, the filter becomes clogged approximately 50 hours after starting filtration, making it impossible to depend on the amount of circulating fluid. It was hot.
c 発明が解決しようとする問題点
本発明は、従来法においてフイルターの目づま
り発生による循環停止までの時間が例えば50時間
程度と短い点を解決し、より安定な、より生産性
の良い酸化珪素被膜の製造方法を提供するもので
ある。c Problems to be Solved by the Invention The present invention solves the problem that the conventional method takes a short time to stop circulation due to filter clogging, for example, about 50 hours, and provides silicon oxide that is more stable and more productive. A method of manufacturing a film is provided.
d 問題点を解決するための手段
本発明は上記問題点を解決するために、酸化珪
素を溶解させた珪弗化水素酸水溶液にホウ酸を加
えて酸化珪素の過飽和状態とした処理液と基材と
を接触させて基材表面に酸化珪素被膜を製造する
方法において、
(イ) 該酸化珪素の供給源として、シリカガラス、
珪酸塩ガラス、又は珪酸塩鉱物を使用し、
(ロ) 該ホウ酸の水溶液が該処理液に連続的に注
入、混合し、
(ハ) 毎分処理液の全量の3%以上を1.8〜10μmの
範囲内の孔径を有するフイルターで濾過して該
処理液に循環するという方法を用いている。d Means for Solving the Problems In order to solve the above problems, the present invention uses a treatment solution that is made into a supersaturated state of silicon oxide by adding boric acid to an aqueous solution of hydrosilicofluoric acid in which silicon oxide is dissolved, and a base. In the method of producing a silicon oxide film on the surface of a substrate by contacting the silicon oxide with the silicon oxide, (a) as a source of the silicon oxide, silica glass,
silicate glass or silicate mineral is used, (b) the aqueous solution of boric acid is continuously injected and mixed into the processing solution, and (c) 3% or more of the total amount of the processing solution is added every minute to 1.8 to 10 μm. A method is used in which the treated solution is filtered through a filter having a pore size within the range of .
本発明に使用される酸化珪素供給源は、各種製
法により作成したシリカガラス、ソーダライムガ
ラス、ホウ珪酸ガラスなどの珪酸塩ガラス、又は
輝石、長石などの珪酸塩鉱物である。つまり本発
明の酸化珪素の供給源としてはシリカゲル以外の
SiO2含有原料が使用出来る。 The silicon oxide supply source used in the present invention is a silicate glass such as silica glass, soda lime glass, or borosilicate glass prepared by various manufacturing methods, or a silicate mineral such as pyroxene or feldspar. In other words, as a source of silicon oxide in the present invention, sources other than silica gel can be used.
Raw materials containing SiO 2 can be used.
本発明は、従来法においてシリカゲルを使用し
て珪弗化水素酸溶液に酸化珪素を飽和させている
ことが製造される酸化珪素被膜に凹凸形状が発生
しやすい原因であることを発見し、それに基きな
されたものである。 The present invention has discovered that the use of silica gel in conventional methods to saturate silicon oxide in a hydrosilicofluoric acid solution is a cause of the tendency for uneven shapes to occur in the silicon oxide film produced. It is based on
つまり酸化珪素の飽和源としてシリカゲルを用
いる時には飽和状態とするために実質的に飽和量
以上のシリカゲルが珪弗化水素酸溶液に添加さ
れ、過飽和量のシリカゲルが珪弗化水素酸の酸化
珪素飽和水溶液中に非常に微細な溶け残りとなつ
て浮遊した状態となる。そしてこの浮遊状態のシ
リカゲルがホウ酸水溶液の添加により過飽和状態
となつた処理液中で酸化珪素析出の核となるため
酸化珪素被膜に凹凸形状が発生しやすいと考えら
れる。そこで本発明の様に処理液中に過飽和分の
原料が非常に微細な粒子となつて残留し、浮遊す
る事のない原料を使用することにより、前記浮遊
状態のSiO2核を処理液中から排除できる。その
ため後述の様に前記循環液の濾過フイルターの孔
径を大径化しても生成される酸化珪素被膜に凹凸
形状が発生しにくくなり、又フイルター目づまり
発生による循環停止までの時間が長期化される。 In other words, when using silica gel as a saturation source of silicon oxide, substantially more than the saturation amount of silica gel is added to the hydrosilicofluoric acid solution to achieve a saturated state, and a supersaturated amount of silica gel saturates the silicon oxide of the hydrosilicic acid. Very fine undissolved particles remain suspended in the aqueous solution. It is thought that this floating silica gel becomes a nucleus for precipitation of silicon oxide in the processing solution which has become supersaturated due to the addition of the aqueous boric acid solution, so that uneven shapes are likely to occur in the silicon oxide film. Therefore, as in the present invention, the supersaturated raw material remains in the processing liquid as very fine particles and uses a raw material that does not float, thereby removing the suspended SiO 2 nuclei from the processing liquid. Can be eliminated. Therefore, as will be described later, even if the pore diameter of the circulating fluid filtration filter is increased, unevenness is less likely to occur in the silicon oxide film produced, and the time until the circulation stops due to filter clogging becomes longer. .
本発明の酸化珪素被膜の製造方法は特開昭57−
196744,特開昭58−161944に示される通常の析出
法による酸化珪素被膜の製造方法に適用され得る
が、特に処理液を基材を浸漬する処理槽から排出
し、ホウ酸水溶液を排出した処理液中に少量づつ
添加させて酸化珪素の過飽和状態として処理槽に
循環させる循環式析出法において特にその効果を
有する。 The method for manufacturing the silicon oxide film of the present invention is disclosed in Japanese Patent Application Laid-Open No. 57-
196744, JP-A No. 58-161944, it can be applied to the method of manufacturing a silicon oxide film by the usual precipitation method, but in particular, the treatment solution is discharged from the treatment tank in which the substrate is immersed, and the boric acid aqueous solution is discharged. This is particularly effective in a circulating precipitation method in which silicon oxide is added little by little to the solution and circulated to the processing tank to form a supersaturated state of silicon oxide.
本発明に使用される処理液は特開昭57−196744
で示された濃度範囲であるが、内でも珪弗化水素
酸水溶液の濃度は0.1〜2.5モル/、ホウ酸の添
加量は珪弗化水素酸1モルに対して0.01〜0.025
モルの添加の範囲が好ましい。 The processing liquid used in the present invention is disclosed in Japanese Patent Application Laid-Open No. 57-196744.
Within the concentration range shown in , the concentration of the aqueous solution of hydrosilicofluoric acid is 0.1 to 2.5 mol/, and the amount of boric acid added is 0.01 to 0.025 per mol of hydrosilicic acid.
A range of molar additions is preferred.
本発明を該循還式析出法に適用することによ
り、循環式析出法の条件を
全処理液量に対する1分間あたりの循環液体
量が3%以上、望ましくは6%以上する。 By applying the present invention to the circulating precipitation method, the conditions for the circulating precipitation method are such that the amount of circulating liquid per minute relative to the total amount of treated liquid is 3% or more, preferably 6% or more.
処理槽に循環される処理液を1.8μm〜10μm
の範囲内の孔径を有するフイルターで濾過す
る。 The processing liquid circulated in the processing tank is 1.8μm to 10μm
Filter with a filter having a pore size within the range of .
の様にすることができる。It can be done like this.
ここで循環量が3%以下では前述の様な欠点と
なり、又あまりに循環量が多くなると(例えば毎
分全処理液量の40%より多い循環量)浸漬する基
材表面で処理液が激しい乱流となつて流れる様に
なり、浸漬によつて生成される酸化珪素被膜にむ
らが生じる原因となるので好ましくない。 If the circulation rate is less than 3%, it will cause the disadvantages mentioned above, and if the circulation rate is too large (for example, a circulation rate of more than 40% of the total treatment liquid volume per minute), the treatment liquid will be severely disturbed on the surface of the substrate to be immersed. This is not preferable because it becomes like a stream and causes unevenness in the silicon oxide film produced by immersion.
又フイルターの孔径は、酸化珪素被膜に凹凸形
状があらわれない範囲で大きい方が好まれるが、
本発明によつても10μmよりも大きい孔径のフイ
ルターでは凹凸形状を持つた(ヘイズ率の高い)
酸化珪素被膜となりやすいので10μm以下のフイ
ルターとする。 In addition, it is preferable that the pore diameter of the filter be as large as possible so that uneven shapes do not appear on the silicon oxide film.
According to the present invention, a filter with a pore diameter larger than 10 μm has an uneven shape (high haze rate).
Since it tends to form a silicon oxide film, use a filter with a diameter of 10 μm or less.
本発明においても浸漬して処理する基材表面に
対して平行な層流状態として処理液が流れること
が特願昭58−137217と同様好ましい。 In the present invention, as in Japanese Patent Application No. 58-137217, it is preferable that the treatment liquid flow in a laminar flow parallel to the surface of the substrate to be immersed and treated.
e 実施例
実施例 1
たて100mm、よこ100mm、厚さ1mmのソーダライ
ムガラスを0.5重量%のHF水溶液中に10分間浸漬
した後、十分に洗浄し乾燥した。次いで当該ガラ
スの表面に第1図に示す浸漬槽を用い以下の手順
で酸化珪素被膜を形成した。e Examples Example 1 A soda lime glass measuring 100 mm in length, 100 mm in width and 1 mm in thickness was immersed in a 0.5% by weight HF aqueous solution for 10 minutes, then thoroughly washed and dried. Next, a silicon oxide film was formed on the surface of the glass using the immersion tank shown in FIG. 1 in the following manner.
第1図において浸漬槽は外槽1と内槽2から成
り、内槽と外槽の間には水3が満してある。この
水は温度が35℃となるようヒーター4で加熱さ
れ、かつ温度分布均一化のため撹拌器5で撹拌さ
れている。内槽は前部6、中部7、後部8から成
り、各部には0.5〜2mmの粒径の普通板ガラスの
粉末を酸化珪素の供給源として酸化珪素を溶解・
飽和・分取させた2.0モル/の濃度の珪弗化水
素酸水溶液を水を用いて倍に希釈した3の反応
液が満たしてある。ここでまず循環ポンプ10を
作動させ内槽後部8の反応液を一定量づつ汲出し
てフイルター11で濾過し内槽前部6へ戻す処理
液循還を開始した。 In FIG. 1, the dipping tank consists of an outer tank 1 and an inner tank 2, and water 3 is filled between the inner tank and the outer tank. This water is heated with a heater 4 to a temperature of 35° C., and is stirred with a stirrer 5 to make the temperature distribution uniform. The inner tank consists of a front part 6, a middle part 7, and a rear part 8, and each part is filled with ordinary plate glass powder with a particle size of 0.5 to 2 mm, which is used as a source of silicon oxide to melt and melt silicon oxide.
It is filled with the reaction solution No. 3, which is obtained by diluting a saturated and fractionated aqueous solution of hydrosilicic fluoride acid at a concentration of 2.0 mol/fold with water. First, the circulation pump 10 was activated to pump out a certain amount of the reaction liquid from the rear part 8 of the inner tank, filter it with the filter 11, and start circulating the treated liquid back to the front part 6 of the inner tank.
その後、0.5モル/のホウ酸水溶液12を連
続的に内槽後部8に滴下し10時間保持した。この
状態で反応液は適度なSiO2過飽和度を有する処
理液となつた。 Thereafter, a 0.5 mol/aqueous boric acid solution 12 was continuously dropped into the rear part 8 of the inner tank and maintained for 10 hours. In this state, the reaction solution became a treatment solution with an appropriate degree of SiO 2 supersaturation.
ここでフイルター11のメツシユを2.5μmおよ
び処理液循環量を240ml/分(処理液全量が約3
であるので循環量は8%/分である)と設定し
た。そして前記HF処理したガラス9を内槽中部
7に垂直に浸漬し前記条件(0.5モル/のホウ
酸水溶液を0.2ml/分で添加し、8%/分の循環
をし、2.5μmのフイルターで濾過する。)で4時
間保持した。 Here, the mesh of filter 11 is set to 2.5 μm, and the processing liquid circulation rate is set to 240 ml/min (the total processing liquid volume is approximately 3 μm).
Therefore, the circulation rate was set at 8%/min. Then, the HF-treated glass 9 was immersed vertically into the middle part 7 of the inner tank under the conditions described above (0.5 mol/boric acid aqueous solution was added at 0.2 ml/min, circulated at 8%/min, and filtered through a 2.5 μm filter). (filter) for 4 hours.
上記処理で得られた試料ガラス板上の酸化珪素
被膜は約1000Å厚であり、ヘイズ率(JlS、K−
6714(1977)の航空機用メタクリル樹脂板の曇価
測定法)を測定すると0.18%であつた。 The silicon oxide film on the sample glass plate obtained by the above treatment has a thickness of about 1000 Å, and has a haze rate (JlS, K-
6714 (1977) method for measuring the haze value of methacrylic resin plates for aircraft), it was 0.18%.
比較例 1
珪弗化水素酸に酸化珪素を飽和させる酸化珪素
の供給源として工業用シリカゲルを使用した以外
は実施例1と同様の条件で酸化珪素被膜を作成し
た。Comparative Example 1 A silicon oxide film was created under the same conditions as in Example 1, except that industrial silica gel was used as a source of silicon oxide to saturate hydrofluorosilicic acid with silicon oxide.
得られた酸化珪素被膜は実施例1と同様約1000
Å厚であつたが、そのヘイズ率は0.36%であつ
た。 The obtained silicon oxide film had a molecular weight of about 1000 as in Example 1.
The haze rate was 0.36%.
上記実施例および比較例とをくらべると、酸化
珪素被膜の析出速度は同一であり、又比較例によ
り得られた被膜のヘイズ率は実施例よりも高いこ
とがわかる。 Comparing the above examples and comparative examples, it can be seen that the deposition rate of the silicon oxide film is the same, and the haze rate of the film obtained in the comparative example is higher than that of the example.
ここで実施例条件では比較例条件とくらべてよ
り低いヘイズ率の酸化珪素被膜が得られている
が、比較例(従来法)において実施例(本発明)
と同一のヘイズ率の被膜を得るためには実用上フ
イルター孔径をより小さなものとせねばならな
い。一般に小さな径のフイルターほど同じ濾過条
件では目づまりを生じやすいため、従来法におい
ては本発明よりも早く目づまりを生じる。 Here, under the example conditions, a silicon oxide film with a lower haze rate was obtained compared to the comparative example conditions, but in the comparative example (conventional method), the example (present invention)
In order to obtain a coating with the same haze ratio as , the filter pore diameter must be made smaller in practical terms. In general, a filter with a smaller diameter is more likely to become clogged under the same filtration conditions; therefore, in the conventional method, the filter becomes clogged more quickly than in the present invention.
f 発明の効果
本発明によれば、従来よりも孔径の大きなフイ
ルターを用いて凹凸形状を持たない良好な酸化珪
素被膜を製造することが出来る。そのため目づま
りの生じる時間をより長く出来、より安定した酸
化珪素被膜の製造が行なえる。f Effects of the Invention According to the present invention, it is possible to produce a good silicon oxide film without unevenness using a filter having a larger pore diameter than conventional filters. Therefore, the time for clogging to occur can be extended, and a more stable silicon oxide film can be produced.
又本発明は珪弗化水素酸の酸化珪素飽和水溶液
中に浮遊状シリカゲルを生成させないことをその
主旨としているものであり、酸化珪素供給源の一
部としてシリカゲルを使用する方法(例えば飽和
量の1/2の量のシリカゲルを初めに溶解し、その
後珪酸塩ガラスを使用して飽和させる方法)とそ
の実施態様として含むものである。 The main purpose of the present invention is to prevent the formation of floating silica gel in a saturated silicon oxide aqueous solution of hydrosilicofluoric acid. 1/2 of the amount of silica gel is first dissolved and then saturated using silicate glass) and embodiments thereof.
第1図は本発明の実施例および比較例に使用し
た循環式処理装置の系統説明図である。
1……外槽、2……内槽、3……水、4……ヒ
ーター、5……撹拌器、6……内槽前部、7……
内槽中央部、8……内槽後部、9……ガラス、1
0……循環ポンプ、11……フイルター、12…
…ホウ酸水溶液。
FIG. 1 is a system explanatory diagram of a circulation type processing apparatus used in Examples and Comparative Examples of the present invention. 1... Outer tank, 2... Inner tank, 3... Water, 4... Heater, 5... Stirrer, 6... Inner tank front, 7...
Center part of inner tank, 8...Rear part of inner tank, 9...Glass, 1
0...Circulation pump, 11...Filter, 12...
...boric acid aqueous solution.
Claims (1)
ホウ酸を加えて酸化珪素の過飽和状態とした処理
液と基材とを接触させて基材表面に酸化珪素被膜
を製造する方法において、 (イ) 該酸化珪素の供給源として、シリカガラス、
珪酸塩ガラス、又は珪酸塩鉱物が使用され、 (ロ) 該ホウ酸の水溶液が該処理液に連続的に注
入、混合され、 (ハ) 毎分処理液の全量の3%以上が1.8〜10μmの
範囲内の孔径を有するフイルターで濾過されて
該処理液に循環される、 ことを特徴とする酸化珪素被膜の製造方法。[Claims] 1. A treatment solution in which boric acid is added to a hydrosilicofluoric acid aqueous solution in which silicon oxide is dissolved to make it supersaturated with silicon oxide is brought into contact with a substrate to form a silicon oxide film on the surface of the substrate. In the manufacturing method, (a) silica glass, as a source of the silicon oxide;
silicate glass or silicate mineral is used, (b) the aqueous solution of boric acid is continuously injected and mixed into the processing solution, and (c) at least 3% of the total amount of the processing solution is mixed with 1.8 to 10 μm per minute. A method for producing a silicon oxide film, characterized in that the treatment solution is filtered through a filter having a pore size within the range of .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11529584A JPS60258480A (en) | 1984-06-05 | 1984-06-05 | Manufacture of silicon dioxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11529584A JPS60258480A (en) | 1984-06-05 | 1984-06-05 | Manufacture of silicon dioxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60258480A JPS60258480A (en) | 1985-12-20 |
| JPH058274B2 true JPH058274B2 (en) | 1993-02-01 |
Family
ID=14659107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11529584A Granted JPS60258480A (en) | 1984-06-05 | 1984-06-05 | Manufacture of silicon dioxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60258480A (en) |
-
1984
- 1984-06-05 JP JP11529584A patent/JPS60258480A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60258480A (en) | 1985-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5132140A (en) | Process for depositing silicon dioxide films | |
| JPS61132530A (en) | Manufacture of porous glass formed article having effective pores | |
| US4078112A (en) | Coating modification process for ultrafiltration systems | |
| JPS63233008A (en) | Method for producing non-sintered cristobalitized silica | |
| CN1665751A (en) | Fused Quartz Articles with Controlled Devitrification | |
| JPH0624602B2 (en) | Filter | |
| JPH058274B2 (en) | ||
| JPS61158810A (en) | Production of high-purity silica sol | |
| JPS6365621B2 (en) | ||
| US20080045409A1 (en) | Ceramic catalysts | |
| SE465921B (en) | PYROLYTIC COATED GLASS AND SET TO MANUFACTURE THE SAME | |
| WO1992007793A1 (en) | Process for preparing silicon dioxide coating | |
| US5858892A (en) | Glass material producing method and gel dipping apparatus | |
| JPH09308833A (en) | Manufacture of fiber composite containing photocatalyst | |
| JP2000026115A (en) | Production of mfi type zeolite film | |
| JPH0127574B2 (en) | ||
| JP2730249B2 (en) | Method for producing silicon dioxide coating | |
| JPH0455124B2 (en) | ||
| JPS6231186Y2 (en) | ||
| JPH03112806A (en) | Production of coating film of silicon dioxide and device therefor | |
| JPH0538016Y2 (en) | ||
| RU2119462C1 (en) | Etching liquor | |
| JPH0694368B2 (en) | Method for producing silicon dioxide film | |
| JPS62288141A (en) | Production of crystallized glass article | |
| JPH06271310A (en) | Formation of silicon dioxide film |