JPH0583161B2 - - Google Patents
Info
- Publication number
- JPH0583161B2 JPH0583161B2 JP26413288A JP26413288A JPH0583161B2 JP H0583161 B2 JPH0583161 B2 JP H0583161B2 JP 26413288 A JP26413288 A JP 26413288A JP 26413288 A JP26413288 A JP 26413288A JP H0583161 B2 JPH0583161 B2 JP H0583161B2
- Authority
- JP
- Japan
- Prior art keywords
- effect transistor
- solenoid
- field effect
- source
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】
<産業上の利用分野>
本発明は、インダクタンス成分をもつ負荷であ
るソレノイドを駆動するためのソレノイド駆動回
路に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a solenoid drive circuit for driving a solenoid, which is a load having an inductance component.
<従来の技術>
従来のソレノイド駆動回路として、第3図に示
すように、電源VBとソレノイド1との間に電源
側にドレインDを接続しソレノイド側にソースS
を接続して駆動段の電界効果トランジスタ
(FET)2を介装し、この電界効果トランジスタ
2のゲートGへの入力電圧VINを制御して、ソレ
ノイド1をオン・オフ制御するようにしたものが
ある。尚、図中3は入力電圧VINを昇圧するため
のチヤージポンプ回路である。<Prior art> As shown in Fig. 3, a conventional solenoid drive circuit has a drain D connected to the power supply side between the power supply VB and the solenoid 1, and a source S connected to the solenoid side.
A field-effect transistor (FET) 2 in the driving stage is connected to the circuit, and the input voltage V IN to the gate G of this field-effect transistor 2 is controlled to turn on/off the solenoid 1. There is. Note that 3 in the figure is a charge pump circuit for boosting the input voltage V IN .
すなわち、入力電圧VINが立上がつて、電界効
果トランジスタ2のゲートG電圧がHレベルにな
ると、電界効果トランジスタ2がONになつて電
流ILによりソレノイド1が駆動され、入力電圧
VINが立下がつて、電界効果トランジスタ2のゲ
ートG電圧がLレベルになると、電界効果トラン
ジスタ2がOFFになつてソレノイド1の駆動が
停止される(第4図参照)。 That is, when the input voltage V IN rises and the gate G voltage of the field effect transistor 2 becomes H level, the field effect transistor 2 turns on and the solenoid 1 is driven by the current I L , and the input voltage increases.
When V IN falls and the gate G voltage of the field effect transistor 2 becomes L level, the field effect transistor 2 is turned off and the driving of the solenoid 1 is stopped (see FIG. 4).
<発明が解決しようとする課題>
しかしながら、ソレノイド1を駆動する場合、
インダクタンス成分を持つため、そのオン・オフ
制御において、オフ制御時、インダクタンスに蓄
積されているエネルギーが電界効果トラジスタ2
で放電されるため、ソレノイド1がオフとなるの
が遅くなり、特にデユーテイ制御において速い制
御ができないという問題点があつた。<Problem to be solved by the invention> However, when driving the solenoid 1,
Since it has an inductance component, during the on/off control, the energy stored in the inductance is transferred to the field effect transistor 2.
As a result, the solenoid 1 takes a long time to turn off, and there is a problem in that fast control is not possible, especially in duty control.
すなわち、電界効果トランジスタ2のゲートG
電圧がLレベル(0V)になると、電界効果トラ
ンジスタ2はOFFになるが、インダクタンス成
分を持つソレノイド1の場合、エネルギー放電の
ため、電流を流し続けようとする。そのため、ソ
ースS電圧はマイナス値となつてゲートG電圧よ
り低くなり、電界効果トランジスタ2をON状態
にして、インダクタンス放電を行う。従つて、電
界効果トランジスタ2はゲートG・ソースS間の
電位差が所定電圧VTH以下となるまでON状態を
断続してしまう。尚、第4図中Aは弁駆動の場合
の開弁電流レベル、Bは閉弁電流レベルを示して
いる。 That is, the gate G of the field effect transistor 2
When the voltage reaches the L level (0V), the field effect transistor 2 is turned off, but in the case of the solenoid 1 having an inductance component, current continues to flow due to energy discharge. Therefore, the source S voltage takes a negative value and becomes lower than the gate G voltage, turning the field effect transistor 2 on and performing inductance discharge. Therefore, the field effect transistor 2 remains in an ON state intermittently until the potential difference between the gate G and the source S becomes equal to or less than the predetermined voltage VTH . In FIG. 4, A indicates the valve opening current level in the case of valve drive, and B indicates the valve closing current level.
本発明は、このような従来の問題点に鑑み、ソ
レノイドのオン・オフ制御を良好に行いうるソレ
ノイド駆動回路を提供することを目的とする。 SUMMARY OF THE INVENTION In view of these conventional problems, it is an object of the present invention to provide a solenoid drive circuit that can effectively control on/off of a solenoid.
<課題を解決するための手段>
このため、本発明は、電源とソレノイドとの間
にソレノイド側にソースを接続して駆動段の電界
効果トランジスタを介装し、この電界効果トラン
ジスタのゲートへの入力電圧を制御してソレノイ
ドをオン・オフ制御するソレノイド駆動回路にお
いて、前記駆動段の電界効果トランジスタのゲー
ト・ソース間を別の電界効果トラジスタを介して
接続し、この別の電界効果トランジスタのゲート
に所定の電圧源を接続する一方、前記駆動段の電
界効果トランジスタのドレイン・ソース間に定電
圧ダイオードを介装する構成としたものである。<Means for Solving the Problems> For this reason, the present invention interposes a drive stage field effect transistor with the source connected to the solenoid side between the power supply and the solenoid, and connects the field effect transistor to the gate of the field effect transistor. In a solenoid drive circuit that controls input voltage to turn on and off a solenoid, the gate and source of the field effect transistor in the drive stage are connected via another field effect transistor, and the gate and source of the field effect transistor in the drive stage are connected via another field effect transistor. A predetermined voltage source is connected to the drive stage, and a constant voltage diode is interposed between the drain and source of the field effect transistor of the drive stage.
<作用>
上記の構成においては、入力電圧が立下がつ
て、駆動段の電界効果トランジスタのゲート電圧
がLレベル(0V)になると、電界効果トランジ
スタはOFFになるが、ソレノイドはインダクタ
ンス成分を持つため、電流を流し続けようとす
る。この結果、ソース電圧はマイナス値となり、
電界効果トランジスタのゲート・ソース間に電位
差を生じるが、別の電界効果トランジスタのゲー
トには所定の電圧源が接続されているため、その
ゲート・ソース間の電位差の方が大きく、この別
の電界効果トランジスタの方が先にONになるた
め、微小電流が流れ込んで、駆動段の電界効果ト
ランジスタのゲートとソースとを同電位に保つか
ら、駆動段の電界効果トランジスタはONになら
ない。そして、ソレノイドは定電圧ダイオードを
介してインダクタンス放電を行う。これにより、
ソレノイドのオフ状態への移行を早めることがで
きる。<Function> In the above configuration, when the input voltage falls and the gate voltage of the field effect transistor in the drive stage becomes L level (0V), the field effect transistor turns OFF, but the solenoid has an inductance component. Therefore, it tries to keep the current flowing. As a result, the source voltage becomes a negative value,
A potential difference is generated between the gate and source of a field effect transistor, but since a predetermined voltage source is connected to the gate of another field effect transistor, the potential difference between that gate and source is larger, and this other field effect transistor Since the effect transistor turns on first, a small current flows in and keeps the gate and source of the drive stage field effect transistor at the same potential, so the drive stage field effect transistor does not turn on. The solenoid then performs inductance discharge via the constant voltage diode. This results in
It is possible to hasten the transition of the solenoid to the OFF state.
<実施例>
以下に本発明の一実施例を第1図及び第2図に
基づいて説明する。<Example> An example of the present invention will be described below based on FIGS. 1 and 2.
第1図を参照し、電源VB(=12V)とソレノイ
ド1との間に電源側にドレインDを接続しソレノ
イド側にソースSを接続して駆動段の電界効果ト
ランジスタ(以下FETという)2を介装し、こ
のFET2のゲートGへチヤージポンプ回路3を
介して与える入力電圧VINを制御して、第2図を
示すように、ソレノイド1をオン・オフ制御す
る。 Referring to Figure 1, the drain D is connected to the power supply side between the power supply V B (=12V) and the solenoid 1, the source S is connected to the solenoid side, and a field effect transistor (hereinafter referred to as FET) 2 of the drive stage is connected. By controlling the input voltage V IN applied to the gate G of the FET 2 via the charge pump circuit 3, the solenoid 1 is turned on and off as shown in FIG.
ここにおいて、FET2のゲートG・ソースS
間を別のFET4を介して接続し、この別のFET
4のゲートGに所定の電圧源(V1)5を接続す
る。FET2,4の動作電圧(ゲート・ソース間
電圧)VTH=1.5Vとすれば、V1=0.8V程度とす
る。 Here, the gate G and source S of FET2
This other FET is connected through another FET4.
A predetermined voltage source (V 1 ) 5 is connected to the gate G of 4. If the operating voltage (gate-source voltage) of FETs 2 and 4 is V TH =1.5V, then V 1 is approximately 0.8V.
また、FET2のドレインD・ソースS間に定
電圧ダイオード6を介装する。 Further, a constant voltage diode 6 is interposed between the drain D and the source S of the FET 2.
次に作用を説明する。 Next, the action will be explained.
入力電圧VINが立上がつて、FET2のゲートG
電圧がHレベルになると、該FET2がONとなつ
てソレノイド1が駆動される。 When the input voltage V IN rises, the gate G of FET2
When the voltage reaches H level, the FET 2 is turned on and the solenoid 1 is driven.
入力電圧VINが立下がつて、FET2のゲートG
電圧がLレベルになると、FET2はOFFになる
が、インダクタンス成分を持つソレノイド1の場
合、エネルギー放電のため、電流を流し続けよう
とする。このとき、ソースS電圧はマイナス値と
なり、FET2のゲートG・ソースS間に電位差
を生じるが、別のFET4のゲートGには所定の
電圧源5が接続されているため、そのゲートG・
ソースS間の電位差の方が大きく、この別の
FET4の方が先にONになるため、FET4を介し
微小電流がFET2のソースS側に流れ込んで、
FET2のゲートGとソースSとを同電位に保つ
から、FET2はONにならない。一方、定電圧ダ
イオード6が動作し、ソレノイド1は定電圧ダイ
オード6を介してインダクタンス放電を行う。こ
れにより、遮断を早めることができる。 When the input voltage V IN falls, the gate G of FET2
When the voltage reaches the L level, FET 2 turns off, but in the case of solenoid 1, which has an inductance component, current continues to flow due to energy discharge. At this time, the source S voltage becomes a negative value, creating a potential difference between the gate G and source S of FET2, but since the predetermined voltage source 5 is connected to the gate G of another FET4, that gate G
The potential difference between source S is larger, and this other
Since FET4 turns on first, a small current flows into the source S side of FET2 through FET4,
Since the gate G and source S of FET2 are kept at the same potential, FET2 will not turn on. On the other hand, the constant voltage diode 6 operates, and the solenoid 1 performs inductance discharge via the constant voltage diode 6. This can speed up the shutoff.
<発明の効果>
以上説明したように本発明によれば、ソレノイ
ドのオン・オフ制御に際し、オフを早めることが
でき、制御性を向上できるという効果が得られ
る。<Effects of the Invention> As described above, according to the present invention, when controlling the on/off of a solenoid, it is possible to turn off the solenoid earlier and improve controllability.
第1図は本発明の一実施例を示す回路図、第2
図は同上の動作特性図、第3図は従来例を示す回
路図、第4図は同上の動作特性図である。
1……ソレノイド、2……駆動段の電界効果ト
ランジスタ(FET)、3……チヤージポンプ回
路、4……電界効果トランジスタ(FET)、5…
…電圧源、6……定電圧ダイオード。
Figure 1 is a circuit diagram showing one embodiment of the present invention, Figure 2 is a circuit diagram showing an embodiment of the present invention.
FIG. 3 is a circuit diagram showing a conventional example, and FIG. 4 is a diagram showing operating characteristics same as the above. 1...Solenoid, 2...Drive stage field effect transistor (FET), 3...Charge pump circuit, 4...Field effect transistor (FET), 5...
...Voltage source, 6... Constant voltage diode.
Claims (1)
ースを接続して駆動段の電界効果トランジスタを
介装し、この電界効果トランジスタのゲートへの
入力電圧を制御してソレノイドをオン・オフ制御
するソレノイド駆動回路において、前記駆動段の
電界効果トランジスタのゲート・ソース間を別の
電界効果トランジスタを介して接続し、この別の
電界効果トランジスタのゲートに所定の電圧源を
接続する一方、前記駆動段の電界効果トランジス
タのドレイン・ソース間に定電圧ダイオードを介
装したことを特徴とするソレノイド駆動回路。1 Solenoid drive in which the source is connected to the solenoid side between the power supply and the solenoid, a field effect transistor is inserted in the drive stage, and the input voltage to the gate of this field effect transistor is controlled to turn on and off the solenoid. In the circuit, the gate and source of the field effect transistor of the drive stage are connected via another field effect transistor, and a predetermined voltage source is connected to the gate of this another field effect transistor, while the electric field of the drive stage is A solenoid drive circuit characterized by interposing a constant voltage diode between the drain and source of an effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26413288A JPH02112208A (en) | 1988-10-21 | 1988-10-21 | solenoid drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26413288A JPH02112208A (en) | 1988-10-21 | 1988-10-21 | solenoid drive circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02112208A JPH02112208A (en) | 1990-04-24 |
| JPH0583161B2 true JPH0583161B2 (en) | 1993-11-25 |
Family
ID=17398906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26413288A Granted JPH02112208A (en) | 1988-10-21 | 1988-10-21 | solenoid drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02112208A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04111293U (en) * | 1991-03-18 | 1992-09-28 | 日本サーボ株式会社 | Brake drive circuit |
| JPH04354106A (en) * | 1991-05-31 | 1992-12-08 | Hitachi Ltd | Solenoid driving circuit and car-mounted at control equipment |
| FR2683687B1 (en) * | 1991-11-13 | 1994-03-04 | Nokia Consumer Electronics Franc | POWER SWITCH WITH MOS SWITCH. |
-
1988
- 1988-10-21 JP JP26413288A patent/JPH02112208A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02112208A (en) | 1990-04-24 |
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