JPH0583513B2 - - Google Patents
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- JPH0583513B2 JPH0583513B2 JP60142496A JP14249685A JPH0583513B2 JP H0583513 B2 JPH0583513 B2 JP H0583513B2 JP 60142496 A JP60142496 A JP 60142496A JP 14249685 A JP14249685 A JP 14249685A JP H0583513 B2 JPH0583513 B2 JP H0583513B2
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Description
【発明の詳細な説明】
産業上の利用分野
この発明は、半導体拡散炉の炉芯管、ボート、
フオークのごとき半導体製造用部材、とくに高強
度材料でつくられた半導体製造用部材に関するも
のである。[Detailed Description of the Invention] Industrial Application Field This invention relates to a furnace core tube of a semiconductor diffusion furnace, a boat,
It relates to semiconductor manufacturing parts such as forks, particularly semiconductor manufacturing parts made of high-strength materials.
従来の技術
従来のセラミツク焼結体でつくられた半導体製
造用部材たとえば半導体用炉芯管は、強度が
150MPa程度にすぎなかつた。Conventional technology Semiconductor manufacturing components made from conventional ceramic sintered bodies, such as semiconductor furnace core tubes, have poor strength.
It was only about 150MPa.
ところが、最近、半導体ウエハは大型化する傾
向が強く、ウエハの寸法および重量が大きくなつ
ている。たとえば、５インチのウエハは15グラ
ム、６インチのウエハは20グラム、８インチのウ
エハは36グラムである。また、これらのウエハを
熱処理する炉芯管の直径は、６インチのウエハで
235mm、８インチのウエハで300mmである。また、
１つのボートには25〜50枚のウエハを載置するの
が一般的である。そのため、ウエハの大型化に伴
つて、ボートが支持すべき重量は著しく増加す
る。フオークは４つのボートを支持することもあ
り、より一段と大きな重量に耐えるようにしなけ
ればならない。 However, recently, there has been a strong tendency for semiconductor wafers to become larger, and the size and weight of the wafers have increased. For example, a 5-inch wafer weighs 15 grams, a 6-inch wafer weighs 20 grams, and an 8-inch wafer weighs 36 grams. In addition, the diameter of the furnace core tube that heat-treats these wafers is 6 inches.
235mm, 300mm for an 8 inch wafer. Also,
Generally, 25 to 50 wafers are loaded on one boat. Therefore, as the size of the wafer increases, the weight that the boat must support increases significantly. The fork may support four boats, so it must be able to withstand even more weight.
発明が解決しようとする問題点
従来のセラミツク焼結体でつくられた半導体用
部材においては、ウエハの大型化に十分に対処で
きない。たとえば、炉芯管の場合、肉厚を大きく
しなければならず、耐スポーリングの問題が生じ
るばかりでなく、炉内の温度降下速度が低く、ラ
ンニングコストが高くなる。Problems to be Solved by the Invention Semiconductor members made of conventional ceramic sintered bodies cannot sufficiently cope with the increase in the size of wafers. For example, in the case of a furnace core tube, the wall thickness must be increased, which not only causes the problem of anti-spalling, but also reduces the rate of temperature drop in the furnace and increases running costs.
また、ボートやフオークの場合、割れや変形等
のトラブルが発生しやすくなる。 Additionally, in the case of boats and forks, problems such as cracking and deformation are more likely to occur.
発明の目的
この発明は、前述のような従来技術の欠点を解
消して、高強度の半導体製造用部材を提供するこ
とを目的としている。OBJECTS OF THE INVENTION It is an object of the present invention to eliminate the drawbacks of the prior art as described above and to provide a high-strength member for semiconductor manufacturing.
発明の要旨
したがつて、この目的を達成するために、第１
の発明は、SiC50〜97重量部と、AlN1〜10重量
部と、C1〜10重量部とを成形焼成してなる半導
体用製造部材を要旨としている。SUMMARY OF THE INVENTION Therefore, in order to achieve this purpose, the first
The gist of the invention is a semiconductor manufacturing member formed by molding and firing 50 to 97 parts by weight of SiC, 1 to 10 parts by weight of AlN, and 1 to 10 parts by weight.
また、第２の発明は、SiC50〜97重量部と、
AlN1〜10重量部と、C1〜10重量部と、Al2O3１
〜30重量部を成形焼成してなる半導体用製造部材
を要旨としている。 Further, the second invention includes 50 to 97 parts by weight of SiC,
1 to 10 parts by weight of AlN, 1 to 10 parts by weight of C, and 1 part by weight of Al 2 O 3
The gist is a manufacturing member for semiconductors formed by molding and firing up to 30 parts by weight.
問題点を解決するための手段
本発明者等は炭化ケイ素質焼結体のひずみの発
生についてその原因を究明したところ、原料の
SiCにおける含有酸素量によつて焼結体の特性が
大きく影響されることを発見した。Means for Solving the Problems The present inventors investigated the cause of distortion in silicon carbide sintered bodies and found that the
We discovered that the properties of sintered bodies are greatly affected by the amount of oxygen contained in SiC.
炭化ケイ素はその粒子表面が常温であつても空
気によつて酸化され、特に1μm以下のような超微
粒子の場合は酸化の度合が著しい。一般的にいつ
て、SiC中の酸素量は表面積に比例して増大す
る。還元すれば、粒子径が小になれば、それだけ
SiC中の酸素量が大きくなるのである。 Silicon carbide is oxidized by air even if its particle surface is at room temperature, and the degree of oxidation is particularly significant in the case of ultrafine particles of 1 μm or less. Generally, the amount of oxygen in SiC increases in proportion to the surface area. By reducing, the smaller the particle size, the more
This increases the amount of oxygen in SiC.
このような炭化ケイ素中の酸素による影響につ
いて説明すれば、AlNは、SiC−AlN−Ｃ系にお
いて液相で反応が進むため、均質性の点でほう素
よりも好ましい焼結助剤であるが、SiC中の酸素
による妨害を受けやすい。そのため、従来は含有
酸素量が比較的多いSiC（例えば約１重量％の酸
素を含むSiC）の場合は、SiC中の酸素による妨
害の度合が大きく、AlNを焼結助剤として用い
ても優れた効果が得られなかつた。 To explain the influence of oxygen in silicon carbide, AlN is a more preferable sintering aid than boron in terms of homogeneity because the reaction proceeds in the liquid phase in the SiC-AlN-C system. , susceptible to interference by oxygen in SiC. Therefore, conventionally, in the case of SiC with a relatively large amount of oxygen content (for example, SiC containing about 1% by weight of oxygen), the degree of interference due to oxygen in SiC is large, and it is not possible to use AlN as a sintering aid. However, the desired effect could not be obtained.
このような観点から、従来、SiC中の含有酸素
量は、少なくともAlNを焼結助剤として使用す
る場合は、小さいほど好ましいとされてきたので
ある。AlNを添加する場合は、SiC中の酸素量を
小さく設定すること、つまりSiCの粒径を大きく
設定することが必要であつた。それゆえ、他の諸
点ではSiC粉末の粒径は小さいほど好ましいこと
がわかつていても、そのような超微粒子は実際に
は使用できなかつた。 From this point of view, it has conventionally been believed that the smaller the amount of oxygen contained in SiC, at least when AlN is used as a sintering aid, the better. When adding AlN, it was necessary to set the amount of oxygen in SiC small, that is, to set the grain size of SiC large. Therefore, even though it is known that the smaller the particle size of SiC powder is in other respects, such ultrafine particles cannot be used in practice.
しかしながら、本発明者等は反応系の中にＣを
含有せしめることによつて前述のごときSiC中の
含有酸素による妨害を制御できることを解明し
た。 However, the present inventors have found that by incorporating C into the reaction system, it is possible to control the interference caused by the oxygen contained in SiC as described above.
そこで、この発明は、このような複数成分の相
互関係を巧みに生かし、まずＣの添加により炭化
けい素を無酸素状態にし、しかるのちAlNを焼
結助剤として焼結させるものである。それゆえ反
応が理想的な状態で行なわれる。 Therefore, the present invention makes skillful use of the interrelationships among multiple components and first renders silicon carbide in an oxygen-free state by adding C, and then sinters it using AlN as a sintering aid. Therefore, the reaction takes place under ideal conditions.
SiC中の酸素の影響をうけずに、AlNは、例え
ば2000℃以上の焼結温度において液相となり、
AlがSiと均一に置換されやすい。したがつて焼
結体は均質となり、高強度となる。 Without being affected by oxygen in SiC, AlN becomes a liquid phase at a sintering temperature of 2000℃ or higher, for example.
Al tends to be uniformly replaced with Si. Therefore, the sintered body becomes homogeneous and has high strength.
また、第２発明にあつては、炭化ケイ素をAl2
O3−AlN−Ｃ系の焼結助剤で焼結させ、高強度
の自焼結炭化けい素をつくる。その場合、SiC−
AlNは全律固溶する。したがつてSiC−Al2O3−
AlN−Ｃ系では炭化ケイ素は自焼結する。この
系にあつては液相焼結であり、そのため、固相焼
結のものに比べて均一な焼結組織を作り易い。 In addition, in the second invention, silicon carbide is Al 2
It is sintered with an O 3 -AlN-C based sintering aid to produce high-strength self-sintered silicon carbide. In that case, SiC−
AlN is completely dissolved in solid solution. Therefore, SiC−Al 2 O 3 −
In the AlN-C system, silicon carbide self-sinters. This system uses liquid phase sintering, which makes it easier to create a uniform sintered structure compared to solid phase sintering.
また、Al2O3を添加すると、Al2O3の一部がＣ
により還元され、活性なAlが生成し、他の酸化
物の不純物が焼結炭化ケイ素の粒界にα−Al2O3
として存在する。炭化ケイ素と、炭化ケイ素焼結
組織に存在するAl2O3との熱膨脹の差によつて焼
結体の歪みを除く作用をする。このため焼結体の
強度900MPaにも達する、また、ワイブル係数は
15となり、きわめて信頼性が高くなる。 Also, when Al 2 O 3 is added, a part of Al 2 O 3 becomes C
is reduced to form active Al, and other oxide impurities are deposited at the grain boundaries of sintered silicon carbide as α-Al 2 O 3
It exists as. The difference in thermal expansion between silicon carbide and Al 2 O 3 present in the sintered silicon carbide structure acts to remove distortion in the sintered body. Therefore, the strength of the sintered body reaches 900 MPa, and the Weibull coefficient is
15, making it extremely reliable.
このようなことを勘案して、この発明にあつて
は、組成を次のとおり限定した。すなわち、第１
発明ではSiC50〜97重量部と、AlN1〜10重量部
と、C1〜10重量部にし、第２発明では、さらに、
Al2O3１〜30重量部を追加したのである。 Taking these matters into consideration, the composition of this invention was limited as follows. That is, the first
In the invention, 50 to 97 parts by weight of SiC, 1 to 10 parts by weight of AlN, and 1 to 10 parts by weight are used, and in the second invention, further,
1 to 30 parts by weight of Al 2 O 3 were added.
組成をそのように限定した理由を以下詳細に説
明する。 The reason for limiting the composition in this way will be explained in detail below.
AlNは、１重量部より小だと焼結助剤として
の十分な効果が得られず、10重量部より大だと強
度が著しく低下する。 If AlN is less than 1 part by weight, sufficient effect as a sintering aid will not be obtained, and if it is more than 10 parts by weight, the strength will be significantly reduced.
Ｃは、１重量部より小だと焼結助剤として添加
した窒化物が焼結助剤として作用しなくなつて強
度の低下を招き、10重量部より大だと焼結体とし
ての耐酸化性が悪化し、強度も低下する。 If C is less than 1 part by weight, the nitride added as a sintering aid will no longer function as a sintering aid, resulting in a decrease in strength, and if it is more than 10 parts by weight, the oxidation resistance of the sintered body will deteriorate. The properties deteriorate and the strength also decreases.
Al2O3は１重量部より小だと強度の向上が認め
られず、30重量部より大だと強度の低下が著しく
なる。 If Al 2 O 3 is less than 1 part by weight, no improvement in strength will be observed, and if it is more than 30 parts by weight, the strength will be significantly reduced.
本発明においては、SiC中の酸素含有量を1.5重
量％以上にして、半導体製造用部材の曲げ強さを
増加させている。 In the present invention, the oxygen content in SiC is set to 1.5% by weight or more to increase the bending strength of the semiconductor manufacturing member.
本発明の好ましい実施態様では、炭化ケイ素の
比表面積を20m2／ｇ以上（好ましくは約45m2／
ｇ）にして、焼結体の特性を一段と優れたものに
する。 In a preferred embodiment of the present invention, the specific surface area of silicon carbide is 20 m 2 /g or more (preferably about 45 m 2 /g).
g) to further improve the properties of the sintered body.
実施例 １
平均粒径の1μmのSiC粉末79重量部と、Al2O3
15重量部と、C4重量部と、AlN2重量部を配合
し、フエノールレジンを粘結剤として添加して混
練成形し、アルゴン雰囲気下で1800℃の温度で常
圧縮焼結を行なつて、理論密度に対し98〜80％の
緻密体を得た。その20℃における曲げ強さは
900MPaであつた。Example 1 79 parts by weight of SiC powder with an average particle size of 1 μm and Al 2 O 3
15 parts by weight, C4 parts by weight, and AlN2 parts by weight were mixed, phenol resin was added as a binder, kneaded and molded, and normal compression sintered at a temperature of 1800°C in an argon atmosphere. A dense body with a density of 98-80% was obtained. Its bending strength at 20℃ is
It was 900MPa.
実施例 ２
平均粒径10μmのSiC粉末に４重量部のＣと２
重量部のAlNを配合し、フエノールレジンを粘
結剤として使用して混練成形し、アルゴン雰囲気
下で2100℃の常圧焼結を行つて、理論密度に対し
98〜80重量％の緻密体を得た。その20℃における
曲げ強さは850MPaであつた。Example 2 SiC powder with an average particle size of 10 μm was mixed with 4 parts by weight of C and 2
Parts by weight of AlN were blended, kneaded and molded using phenol resin as a binder, and sintered at 2100°C under normal pressure in an argon atmosphere to achieve the theoretical density.
A dense body of 98-80% by weight was obtained. Its bending strength at 20°C was 850 MPa.
実施例 ３
平均粒径1μmのSiC粉末をポツトミルに入れ
て、水を含まないアセトンを使用して平均粒径
0.5μmになるまで粉砕した。Example 3 SiC powder with an average particle size of 1 μm was placed in a pot mill, and the average particle size was reduced using water-free acetone.
It was ground to 0.5 μm.
このような超微粒のSiC粉末を常温で空気にさ
らし、SiCの粒子表面積を一部酸化させた。その
際、それらの酸化を管理して、SiC内の酸素含有
量を0.5重量％、１重量％、1.5重量％、２重量
％、４重量％にしたものを得た。 This ultrafine SiC powder was exposed to air at room temperature to partially oxidize the surface area of the SiC particles. At that time, the oxidation was controlled to obtain SiC with an oxygen content of 0.5% by weight, 1% by weight, 1.5% by weight, 2% by weight, and 4% by weight.
そのように一部酸化された各SiC粉末に３重量
部のＣと１重量部のAlNを配合し、フエノール
レジンを粘結剤として使用して混練成形し、アル
ゴン雰囲気下で2100℃の常圧焼結を行つて、理論
密度に対し98〜80重量％の緻密体を得た。これら
のものの20℃における曲げ強さは表１に示す通り
であつた。表１からも明らかなように、SiC中の
酸素量が1.5重量％を超えると、曲げ強さが増加
する。 Each partially oxidized SiC powder was mixed with 3 parts by weight of C and 1 part by weight of AlN, kneaded and molded using phenol resin as a binder, and then molded at 2100°C under an argon atmosphere at normal pressure. Sintering was performed to obtain a dense body having a density of 98 to 80% by weight based on the theoretical density. The bending strength of these products at 20°C was as shown in Table 1. As is clear from Table 1, when the amount of oxygen in SiC exceeds 1.5% by weight, the bending strength increases.
実施例 ４
平均粒径1μmのSiC粉末にAl2O3，Ｃおよび
AlNを配合し、フエノールレジンを粘結剤とし
て添加して混練成形し、アルゴン雰囲気下で1800
℃の温度で常圧焼結を行なつて、理論密度に対し
98〜80重量％の緻密体を得た。これらのものの20
℃における曲げ強度は表２に示すとおりであつ
た。Example 4 Al 2 O 3 , C and SiC powder with an average particle size of 1 μm
Blend AlN, add phenol resin as a binder, knead and mold, and heat to 1800 m
Pressureless sintering is performed at a temperature of
A dense body of 98-80% by weight was obtained. 20 of these things
The bending strength at ℃ was as shown in Table 2.
表２からも明らかなように、SiC粉末の比表面
積が20m2／ｇを超えると、曲げ強度が増加する。 As is clear from Table 2, when the specific surface area of the SiC powder exceeds 20 m 2 /g, the bending strength increases.
発明の効果
以上の説明からも明らかなように、本発明によ
れば、従来のものに比較して高強度の半導体用部
材が得られる。とくに最適の条件にすれば、
900MPaの高強度のものが得られる。Effects of the Invention As is clear from the above description, according to the present invention, a member for semiconductors having higher strength than conventional ones can be obtained. Especially under optimal conditions,
High strength of 900MPa can be obtained.
それゆえ、本発明によれば、半導体用製造部材
を２〜３mmの薄肉にしても十分に実用に供しえる
ことになり、耐スポーリング性が格段に向上し、
とくに大型の炉芯管に適用した場合、肉薄により
炉内の温度降下速度を大きくでき、ランニングコ
ストを大幅に低減できるという実務上きわめて顕
著な効果を奏する。 Therefore, according to the present invention, even if the semiconductor manufacturing member is made as thin as 2 to 3 mm, it can be put to practical use, and the spalling resistance is significantly improved.
Particularly when applied to a large furnace core tube, the thin wall makes it possible to increase the rate of temperature drop inside the furnace, which has an extremely significant practical effect of significantly reducing running costs.
また、本発明によれば、従来のものに比較して
比較的低温で焼結できる。とくに従来は実際上全
く不可能とされていた1900℃以下の温度でも所望
の焼結が実施できる。したがつて製造コストの低
減がはかれる。 Further, according to the present invention, sintering can be performed at a relatively low temperature compared to conventional methods. In particular, desired sintering can be performed at temperatures below 1900°C, which was previously considered to be completely impossible. Therefore, manufacturing costs can be reduced.
さらに、本発明にあつては、焼結体が気孔率１
％以下で緻密であるため、Siの含浸が不要であ
る。 Furthermore, in the present invention, the sintered body has a porosity of 1
% or less, so impregnation with Si is not necessary.
表 １ 酸素含有量（重量％） 曲げ強度 （MPa） 0.5 300 1.0 310 1.5 400 2.0 520 4.0 640 表 ２ SiCの比表面積 強 度 （m2／ｇ） （MPa） 10 500 15 550 20 680 25 750 40 830 Table 1 Oxygen content (wt%) Bending strength (MPa) 0.5 300 1.0 310 1.5 400 2.0 520 4.0 640 Table 2 Specific surface area of SiC Strength (m 2 /g) (MPa) 10 500 15 550 20 680 25 750 40 830
Claims (1)
SiC50〜97重量部と、AlN1〜10重量部と、C1〜
10重量部を成形焼成してなる半導体製造用部材。 ２ 酸素を1.5重量％以上含むSiCを使用し、かつ
SiC50〜97重量部と、AlN1〜10重量部と、C1〜
10重量部と、Al2O3１〜30重量部を成形焼成して
なる半導体製造用部材。 ３ 比表面積が20m2／ｇ以上であるSiCを使用し
た特許請求の範囲第１項または第２項に記載の半
導体製造用部材。[Claims] 1. Using SiC containing 1.5% by weight or more of oxygen, and
50~97 parts by weight of SiC, 1~10 parts by weight of AlN, and 1~
A semiconductor manufacturing component made by molding and firing 10 parts by weight. 2 Uses SiC containing 1.5% by weight or more of oxygen, and
50~97 parts by weight of SiC, 1~10 parts by weight of AlN, and 1~
A semiconductor manufacturing member formed by molding and firing 10 parts by weight and 1 to 30 parts by weight of Al 2 O 3 . 3. The semiconductor manufacturing member according to claim 1 or 2, which uses SiC having a specific surface area of 20 m 2 /g or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60142496A JPS627669A (en) | 1985-07-01 | 1985-07-01 | Member for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60142496A JPS627669A (en) | 1985-07-01 | 1985-07-01 | Member for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS627669A JPS627669A (en) | 1987-01-14 |
| JPH0583513B2 true JPH0583513B2 (en) | 1993-11-26 |
Family
ID=15316680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60142496A Granted JPS627669A (en) | 1985-07-01 | 1985-07-01 | Member for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627669A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761134B1 (en) * | 1987-03-30 | 1993-11-16 | Silicon carbide diffusion furnace components with an impervious coating thereon | |
| JPH01119560A (en) * | 1987-10-31 | 1989-05-11 | Toshiba Ceramics Co Ltd | Electrically conductive silicon carbide sintered body |
| JPH01131059A (en) * | 1987-11-17 | 1989-05-23 | Toshiba Ceramics Co Ltd | Production of furnace core tube of silicon carbide |
| JP5281666B2 (en) * | 2011-02-28 | 2013-09-04 | 東京窯業株式会社 | Conductive ceramic sintered body |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS553396A (en) * | 1978-06-15 | 1980-01-11 | Carborundum Co | Silicon carbideealuminum nitride sintered product and its manugacture |
| JPS57148344A (en) * | 1981-03-10 | 1982-09-13 | Nec Corp | Manufacturing equipment for semiconductor |
| JPS5950086A (en) * | 1982-09-17 | 1984-03-22 | 南九州化学工業株式会社 | Coated granular potassium fertilizer |
-
1985
- 1985-07-01 JP JP60142496A patent/JPS627669A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS627669A (en) | 1987-01-14 |
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