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JPH0583872B2 - - Google Patents
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JPH0583872B2 - - Google Patents

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Publication number
JPH0583872B2
JPH0583872B2 JP3814384A JP3814384A JPH0583872B2 JP H0583872 B2 JPH0583872 B2 JP H0583872B2 JP 3814384 A JP3814384 A JP 3814384A JP 3814384 A JP3814384 A JP 3814384A JP H0583872 B2 JPH0583872 B2 JP H0583872B2
Authority
JP
Japan
Prior art keywords
transistor
voltage
constant current
base
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3814384A
Other languages
Japanese (ja)
Other versions
JPS60181658A (en
Inventor
Tsunanori Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP3814384A priority Critical patent/JPS60181658A/en
Publication of JPS60181658A publication Critical patent/JPS60181658A/en
Publication of JPH0583872B2 publication Critical patent/JPH0583872B2/ja
Granted legal-status Critical Current

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  • Measurement Of Current Or Voltage (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、基準電圧に対する電源電圧の変化を
検出する電圧検出回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a voltage detection circuit that detects a change in power supply voltage with respect to a reference voltage.

〔発明の技術的背景〕[Technical background of the invention]

従来、この種の電圧検出回路として第1図に示
すように、2つのトランジスタ1,2のエミツタ
を定電流源3に共通接続し、かつコレクタを抵抗
4,5を介して電源ラインに接続して差動増幅器
を構成し、さらにベースとコレクタが接続された
トランジスタ6のコレクタに抵抗7を介して電源
電圧VCCを印加し、抵抗7とトランジスタ6のコ
レクタとの接続点に基準電圧VAを発生させこの
基準電圧VAを前記トランジスタ1のベースに与
え、さらにまた抵抗8,9およびダイオード10
を直列接続して抵抗8と9との接続点に電源電圧
VCCを分圧した検出電圧VBを発生させ、この検出
電圧VBをトランジスタ2のベースに印加するこ
とにより、基準電圧VAと検出電圧VBとの差電圧
をトランジスタ1のコレクタから取出し、この差
電圧をトランジスタ11のベースに与えて差電圧
がトランジスタ11の閾値以上ならば該トランジ
スタ11のコレクタと抵抗12との接続点から電
源電圧が所定値以上または以下になつたことを検
出するようにしたものがある。この場合、ダイオ
ード10は基準電圧形成用のトランジスタ6との
関係で、基準電圧VAと検出電圧VBとの温度特性
を一致させるために設けられている。
Conventionally, as shown in FIG. 1, this type of voltage detection circuit has two transistors 1 and 2 whose emitters are commonly connected to a constant current source 3, and whose collectors are connected to a power supply line via resistors 4 and 5. A differential amplifier is constructed by applying a power supply voltage V CC to the collector of a transistor 6 whose base and collector are connected via a resistor 7, and a reference voltage V A to the connection point between the resistor 7 and the collector of the transistor 6. The reference voltage V A is applied to the base of the transistor 1, and the resistors 8 and 9 and the diode 10 are
are connected in series and the power supply voltage is applied to the connection point between resistors 8 and 9.
By generating a detection voltage V B by dividing V CC and applying this detection voltage V B to the base of transistor 2, the difference voltage between the reference voltage V A and detection voltage V B is extracted from the collector of transistor 1. , this differential voltage is applied to the base of the transistor 11, and if the differential voltage is greater than or equal to the threshold value of the transistor 11, it is detected from the connection point between the collector of the transistor 11 and the resistor 12 that the power supply voltage has become greater than or less than a predetermined value. There is something like this. In this case, the diode 10 is provided to match the temperature characteristics of the reference voltage V A and the detection voltage V B in relation to the transistor 6 for forming the reference voltage.

〔背景技術の問題点〕[Problems with background technology]

ところが、上記の従来回路では基準電圧および
検出電圧形成用の抵抗素子等のばらつきが大きい
ため、このばらつきが検出電圧のばらつきとして
直接現われ、電源電圧の検出精度が悪いという欠
点がある。
However, in the above-mentioned conventional circuit, since there are large variations in the resistance elements for forming the reference voltage and the detection voltage, these variations directly appear as variations in the detection voltage, and there is a drawback that the detection accuracy of the power supply voltage is poor.

〔発明の目的〕 本発明は上記欠点を解決し、電源電圧を高精度
で検出し得る電圧検出回路を提供することを目的
とする。
[Object of the Invention] An object of the present invention is to solve the above-mentioned drawbacks and provide a voltage detection circuit that can detect the power supply voltage with high accuracy.

〔発明の概要〕[Summary of the invention]

本発明は、差動増幅用の定電流源とは別に第2
の定電流源を設け、この第2の定電流源からダイ
オード接続構成のトランジスタに定電流を流して
基準電圧を発生させ、さらにこのトランジスタに
流れる定電流をカレントミラー効果で検出電圧発
生部にも流して基準電圧と検出電圧との相対誤差
が少なくなるようにしたことにより、上記目的を
達成している。
The present invention provides a second source in addition to the constant current source for differential amplification.
A constant current source is provided, and a constant current is caused to flow from this second constant current source to a diode-connected transistor to generate a reference voltage.Furthermore, the constant current flowing to this transistor is also transmitted to a detection voltage generation section by a current mirror effect. The above object is achieved by reducing the relative error between the reference voltage and the detected voltage.

〔発明の実施例〕[Embodiments of the invention]

以下、図示する実施例に基づき本発明を説明す
る。
Hereinafter, the present invention will be explained based on illustrated embodiments.

第2図は本発明の一実施例を示す回路図であつ
て、第1図と同一部分は全て同一記号で表してい
る。同図において、第1図と異なる点は、第2の
定電流源13を設け、この定電流源13から抵抗
14を介してダイオード接続構成のトランジスタ
15に定電流を流し、抵抗14と定電流源13と
の接続点に基準電圧VAを発生させ、この基準電
圧VAとトランジスタ1のベースに印加するよう
にしたことである。また、トランジスタ15で制
御されるトランジスタ16を設け、そのコレクタ
電流がトランジスタ15のコレクタ電流と等しく
なるようにカレントミラー回路を構成し、コレク
タ抵抗17との接続点に検出電圧VBを発生して
トランジスタ2のベースに印加するようにしたこ
とである。この場合、トランジスタ15と16は
同一特性のもの選定されている。
FIG. 2 is a circuit diagram showing one embodiment of the present invention, and all the same parts as in FIG. 1 are represented by the same symbols. The difference between this figure and FIG. 1 is that a second constant current source 13 is provided, and a constant current is passed from this constant current source 13 through a resistor 14 to a transistor 15 having a diode-connected configuration. A reference voltage V A is generated at the connection point with the source 13, and this reference voltage V A is applied to the base of the transistor 1. Further, a transistor 16 controlled by the transistor 15 is provided, a current mirror circuit is configured so that its collector current is equal to the collector current of the transistor 15, and a detection voltage V B is generated at the connection point with the collector resistor 17. The reason is that the voltage is applied to the base of transistor 2. In this case, transistors 15 and 16 are selected to have the same characteristics.

ここで、定電流源13は、半導体製造上でのバ
ンドギヤツプを利用して絶対温度に比例した定電
流IO(=K・VT/RS)を出力するように構成さてい る。ここで、Kは比例定数、VTはPN接合順方向
電圧、RSはバンドギヤツプの内部抵抗である。
Here, the constant current source 13 is configured to output a constant current I.sub.O (= K.V.sub.T / R.sub.S ) proportional to absolute temperature by utilizing a band gap in semiconductor manufacturing. Here, K is a proportionality constant, V T is the PN junction forward voltage, and R S is the internal resistance of the band gap.

従つて、このような構成ではトランジスタ15
のコレクタ電圧をVBE、抵抗14の抵抗値をR1
抵抗17の抵抗値をR2とすれば、基準電圧VA
よび検出電圧VBはそれぞれ次の第(1)式および第
(2)式で表わされる。
Therefore, in such a configuration, the transistor 15
The collector voltage of is V BE , the resistance value of resistor 14 is R 1 ,
If the resistance value of the resistor 17 is R2 , the reference voltage V A and the detection voltage V B are calculated by the following equations (1) and (1), respectively.
It is expressed by equation (2).

VA=R1・IO+VBE=K・R1/RSVT+VBE ……(1) VB=VCC−R2・IO=VCC−K・R2/RSVT ……(2) そして、VA=VBのとき検出出力は変曲点を通
るため、この時の電源電圧VCCが検出対象とな
る。従つて、上記第(1)式および第(2)式から、 VCC=K・R1+R2/RSVT+VBE ……(3) となる。
V A = R 1・I O +V BE =K・R 1 /R S V T +V BE ……(1) V B =V CC −R 2・I O =V CC −K・R 2 /R S V T ...(2) Since the detection output passes through an inflection point when V A = V B , the power supply voltage V CC at this time becomes the detection target. Therefore, from the above equations (1) and (2), V CC =K·R 1 +R 2 / RS V T +V BE (3).

従つて、集積回路内では、抵抗間の平衡度を精
度よく実現できるため、基準電圧VAと検出電圧
VBとの相対誤差は小さくなり、電源電圧VCCの変
化を高精度で検出することができる。この場合、
第(3)式における第1項は正の温度係数を示し、第
2項は負の温度係数を示すため、抵抗値R1+R2
とコレクタ電圧VBEの値を適切に選定すれば温度
係数が零の電圧検出回路を構成することができ
る。
Therefore, within the integrated circuit, the balance between the resistors can be achieved with high precision, so that the reference voltage V A and the detection voltage
The relative error with V B becomes small, and changes in the power supply voltage V CC can be detected with high accuracy. in this case,
The first term in equation (3) indicates a positive temperature coefficient, and the second term indicates a negative temperature coefficient, so the resistance value R 1 + R 2
By appropriately selecting the values of V and collector voltage V BE , it is possible to construct a voltage detection circuit with a temperature coefficient of zero.

なお、実施例ではトランジスタをNPN形で構
成しているがPNP形で構成することもできる。
In addition, although the transistor is configured as an NPN type in the embodiment, it can also be configured as a PNP type.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように本発明によれ
ば、第2の定電流源を設け、この第2の定電流源
からダイオード接続構成のトランジスタに定電流
を流して基準電圧を発生させ、さらにこのトラン
ジスタに流れる定電流をカレントミラー構成で検
出電圧発生部にも流して基準電圧と検出電圧との
相対誤差が少くなるようにしたため、電源電圧の
変化を高精度で検出することができる。また、第
2の定電流源にバンドギヤツプ形を利用した場合
には温度係数が零の電圧検出回路を実現できると
いう効果がある。
As is clear from the above description, according to the present invention, a second constant current source is provided, a constant current is caused to flow from the second constant current source to a transistor having a diode connection configuration, and a reference voltage is generated. Since the constant current flowing through the transistor is also passed through the detection voltage generation section using a current mirror configuration to reduce the relative error between the reference voltage and the detection voltage, changes in the power supply voltage can be detected with high accuracy. Further, when a bandgap type is used as the second constant current source, it is possible to realize a voltage detection circuit with a temperature coefficient of zero.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の電圧検出回路を示す図、第2図
は本発明の一実施零を示す回路図である。 1,2,15,16……トランジスタ、3,1
3……定電流源、4,5,14,17……抵抗。
FIG. 1 is a diagram showing a conventional voltage detection circuit, and FIG. 2 is a circuit diagram showing an embodiment of the present invention. 1, 2, 15, 16...transistor, 3, 1
3... Constant current source, 4, 5, 14, 17... Resistor.

Claims (1)

【特許請求の範囲】[Claims] 1 エミツタが第1の定電流源に共通接続された
第1および第2のトランジスタから成る差動増幅
器と、電源ラインと第1のトランジスタのベース
との間に接続された第2の定電流源と、この第2
の定電流源と第1のトランジスタのベースとの接
続点に接続され前記接続点に基準電圧を発生して
前記第1のトランジスタのベースに印加する、ベ
ースとコレクタが接続されエミツタが接地された
第3のトランジスタと第3のトランジスタのコレ
クタに接続された第1の抵抗とからなる直列枝路
と、ベースが前記第3のトランジスタのベースに
接続されるとともにエミツタが接地され、コレク
タが第2の抵抗を介して電源ラインに接続され、
前記第2の抵抗とコレクタとの接続点に検出電圧
を発生して前記第2のトランジスタのベースに印
加する第4のトランジスタとからなり、前記差動
増幅器から基準電圧に対する電源電圧の変化検出
信号を出力することを特徴とする電圧検出回路。
1 A differential amplifier consisting of a first and a second transistor whose emitters are commonly connected to a first constant current source, and a second constant current source connected between a power supply line and the base of the first transistor. And this second
is connected to a connection point between the constant current source and the base of the first transistor, generates a reference voltage at the connection point and applies it to the base of the first transistor, the base and collector are connected, and the emitter is grounded. a series branch consisting of a third transistor and a first resistor connected to the collector of the third transistor; connected to the power line through the resistor of
and a fourth transistor that generates a detection voltage at a connection point between the second resistor and the collector and applies it to the base of the second transistor, and receives a change detection signal of the power supply voltage with respect to the reference voltage from the differential amplifier. A voltage detection circuit characterized by outputting.
JP3814384A 1984-02-29 1984-02-29 Voltage detection circuit Granted JPS60181658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3814384A JPS60181658A (en) 1984-02-29 1984-02-29 Voltage detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3814384A JPS60181658A (en) 1984-02-29 1984-02-29 Voltage detection circuit

Publications (2)

Publication Number Publication Date
JPS60181658A JPS60181658A (en) 1985-09-17
JPH0583872B2 true JPH0583872B2 (en) 1993-11-29

Family

ID=12517192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3814384A Granted JPS60181658A (en) 1984-02-29 1984-02-29 Voltage detection circuit

Country Status (1)

Country Link
JP (1) JPS60181658A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4570950B2 (en) * 2004-12-21 2010-10-27 ローム株式会社 Voltage detection circuit

Also Published As

Publication number Publication date
JPS60181658A (en) 1985-09-17

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