JPH0588732B2 - - Google Patents
Info
- Publication number
- JPH0588732B2 JPH0588732B2 JP142786A JP142786A JPH0588732B2 JP H0588732 B2 JPH0588732 B2 JP H0588732B2 JP 142786 A JP142786 A JP 142786A JP 142786 A JP142786 A JP 142786A JP H0588732 B2 JPH0588732 B2 JP H0588732B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- silica
- resin composition
- filler
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 239000003822 epoxy resin Substances 0.000 claims description 20
- 229920000647 polyepoxide Polymers 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 13
- 239000000945 filler Substances 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 description 8
- 230000035939 shock Effects 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 229930014626 natural product Natural products 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000012847 fine chemical Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
〔産業上の利用分野〕
本発明は、熱衝撃を受けた場合の信頼性に優れ
たエポキシ樹脂組成物に係り、その特徴は内部に
空洞を有する脆いシリカを充填材の一部として用
い熱ストレスを吸収させるところにある。
〔従来技術〕
従来の半導体の一般的な評価方法は、高温高湿
条件における耐湿性テスト及び冷熱衝撃サイクル
テストである。これらは一般使用条件の加速テス
トとして利用されており、主として２気圧100％
RH条件での耐湿性評価や−65℃と150℃の間で
の熱衝撃評価が実施されている。半導体封止用エ
ポキシ樹脂組成物も上記評価に対して寿命を向上
させるように改良されてきた。
しかし、最近半導体の実装方法として半田浴に
半導体及び基板を浸漬させるという合理化方法が
一部で実施され今後かなり汎用化が予想される状
況となつてきた。
現在、従来の半導体封止用エポキシ樹脂組成物
で対応しているが半田浸漬後の信頼性が大幅に低
下するという問題を抱えている。例えば、耐湿性
が極端に劣化したり特性変動を起こしたりするこ
とが報告されている。従来材の品質設計時に想定
した条件とは全く異る急激な熱衝撃が加わるため
−室温から260℃まで数秒で熱変化するため対応
しきれない状態になつている。
そこで、半田浸漬実装法に対応する半導体封止
エポキシ樹脂組成物の開発が市場から強く要求さ
れている。
従来の低応力エポキシ樹脂組成物に関する技術
としては、液状合成ゴムもしくはこれらの変性品
を添加する方法が知られている（例、特開昭53−
144958、特開昭57−180626、特開昭58−174416）、
又シリコーン類もしくはこれらの変性品を添加す
る方法も知られている（例、特開昭56−129246、
特開昭58−47014）。しかし、これらの方法はいず
れも変形性や耐湿性に重大な問題を有していた。
さらにシリコーン類を使用する場合には価格が高
くなりすぎ汎用として使用でないという問題を有
していた。
〔発明の目的〕
本発明は、従来材料では不可能であつた半田浸
漬時の熱衝撃に耐える材料を目的として研究した
結果、内部に適度の空洞を有するシリカを適量使
用することにより急激に熱衝撃を吸収できるだけ
でなく従来の特性も保持できる物質・機構を見い
出し、市場で適用できる材料を完成したものであ
る。
〔発明の構成〕
本発明は、エポキシ樹脂、硬化剤、硬化促進剤
及び充填材からなるエポキシ樹脂組成物におい
て、全充填材量の1/10〜2/3（重量比）が内部に
空洞を有するシリカであり、該シリカの空洞の大
きさがシリカ径の1/3以下で、かつ5μm以下で、
好ましくは空洞の全体積がシリカ体積の1/50〜1/
２であることを特徴とする半導体封止用エポキシ
樹脂組成物である。
本発明でいうところのエポキシ樹脂組成物は、
エポキシ樹脂・硬化促進剤及び本発明の空洞のあ
るシリカを必須とし、必要に応じて硬化剤・充填
材・難燃剤・処理剤・顔料・離型剤その他添加剤
を配合したものである。半導体の封止を目的とし
ているので不純物は少ない方が好ましく例えば試
料５ｇを純水95ｇで125℃・20時間抽出した時の
抽出水電導度が80μs／cm以下で望ましい。
エポキシ樹脂とは、エポキシ基を有するもの全
般のことをいい、例えばビスフエノール型エポキ
シ・フエノールノボラツク型エポキシ樹脂・複素
環型エポキシ樹脂といつた一般名を挙げることが
できる。
硬化促進剤とは、エポキシ樹脂組成物の硬化を
促進させる触媒全般のことをいい、例えばイミダ
ソール類・第３級アミン類・有機リン化合物・有
機アルミニウム化合物といつた一般名を挙げるこ
とができる。
充填材としては、シリカ・マイカ・ガラス・ク
レー・アスベスト・アルミナ等を挙げることがで
きる。この中でも特にシリカが好ましい。
本発明の空洞を有するシリカ（以下、中空シリ
カと称する）は、内部に空洞を有するシリカ状物
質全てのことをいい、天然品でも天然品の加工品
でも合成品でも良い。例えばシリカバルーン・シ
ラスバルーン・シリカゲルやシリコーンの焼成品
及び溶射品（サイラパール／チツソ、シルスタ
ー／日本化学工業等）・アルコキシシランの重合
物（MSP／日興フアインケミカル・XC−99／東
芝シリコーン）を挙げることができる。中空シリ
カの空洞としては、大きさがシリカ径の1/3以下
で且つ5μm以下又体積がシリカ体積の1/50〜1/2
であることが好ましい。空洞が大きすぎても又少
なすぎても多すぎても悪影響を及ぼす場合があ
る。例えば、大きすぎたり・多すぎると強度や耐
湿性が低下したり又少なすぎると耐熱衝撃性が悪
くなつたりすることもある。中空シリカの使用量
としては、充填材の1/10〜2/3（重量比）である
ことが好ましい。少なすぎると耐熱衝撃性が悪く
なつたり、多すぎると強度や耐湿性が低下したり
することもある。
〔発明の効果〕
本発明に従うと半田浸漬といつた厳しい実装条
件でも従来同等以上の信頼性を保持するエポキシ
樹脂封止半導体が得られる。即ち、大量生産・低
コストを目的とした合理化実装法−半田浸漬−が
可能となりさらに半導体を汎用のものとすること
が達成できた。現在でも半導体は日常生活の中で
一般的に使用されているが、本発明により今後さ
らに半導体は汎用化し生活水準向上に役立つこと
が期待できる。
〔実施例〕
以下、半導体封止用成形材料での検討例で説明
する。検討例で用いた部は全て重量部である。
又、使用した原料は次の通りである。
エポキシ樹脂 大日本インキ化学工業エピクロ
ンＮ−66PUP
充填材 龍 森 ヒユーズレツ
クス（溶融シリカ）
硬化剤 住友ベークライト フエノールノ
ボラツク
硬化促進剤 北興化学 TPP
表面処理剤 信越化学 KBM−803P
顔料 電気化学工業 カーボン
離型剤 ミツヤワツクス ＃1
従来の低応力添加剤
信越化学工業 KF−100（エポキシ変性
シリコーンオイル）
宇部興産 CTBN末端カルボキシ
ル基含有ブタジエン・アク
リロニトリルゴム1300
中空シリカシラスバルーン
シリカバルーン
サイラパール
MSP
中空シリカの特性は表−１の通り
[Field of Industrial Application] The present invention relates to an epoxy resin composition that has excellent reliability when subjected to thermal shock. It is in the place where it is absorbed. [Prior Art] Conventional general evaluation methods for semiconductors are a moisture resistance test under high temperature and high humidity conditions and a thermal shock cycle test. These are used as accelerated tests under general usage conditions, and are mainly used at 2 atm 100%
Moisture resistance evaluation under RH conditions and thermal shock evaluation between -65℃ and 150℃ have been conducted. Epoxy resin compositions for semiconductor encapsulation have also been improved to improve their lifespan in response to the above evaluation. However, recently, a streamlined method of immersing the semiconductor and substrate in a solder bath has been implemented in some areas as a semiconductor mounting method, and the situation is such that it is expected to be widely used in the future. Currently, conventional epoxy resin compositions for semiconductor encapsulation are used, but they suffer from the problem that reliability after solder immersion is significantly reduced. For example, it has been reported that the moisture resistance deteriorates extremely or that characteristics change. Due to the sudden thermal shock that is completely different from the conditions assumed when designing the quality of conventional materials, the temperature changes from room temperature to 260 degrees Celsius in a few seconds, making it impossible to cope with the situation. Therefore, there is a strong demand from the market for the development of a semiconductor encapsulating epoxy resin composition that is compatible with the solder immersion mounting method. As a technique for conventional low-stress epoxy resin compositions, a method of adding liquid synthetic rubber or modified products thereof is known (for example, Japanese Patent Application Laid-Open No. 1989-1999)
144958, JP-A-57-180626, JP-A-58-174416),
Additionally, methods of adding silicones or modified products thereof are also known (e.g., JP-A-56-129246;
(Japanese Patent Publication No. 58-47014). However, all of these methods had serious problems with deformability and moisture resistance.
Furthermore, when silicones are used, there is a problem in that they are too expensive and cannot be used for general purposes. [Purpose of the Invention] The present invention was developed with the aim of creating a material that can withstand thermal shock during solder immersion, which was impossible with conventional materials. By discovering a substance and mechanism that can not only absorb shock but also maintain conventional properties, we have completed a material that can be applied on the market. [Structure of the Invention] The present invention provides an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, and a filler, in which 1/10 to 2/3 (weight ratio) of the total filler amount has cavities inside. silica having a cavity size of 1/3 or less of the silica diameter and 5 μm or less,
Preferably, the total volume of the cavity is 1/50 to 1/ of the silica volume.
2. This is an epoxy resin composition for semiconductor encapsulation, characterized in that: The epoxy resin composition referred to in the present invention is
It essentially contains an epoxy resin, a curing accelerator, and the hollow silica of the present invention, and contains a curing agent, filler, flame retardant, processing agent, pigment, mold release agent, and other additives as necessary. Since the purpose is to seal a semiconductor, it is preferable that there are fewer impurities. For example, when 5 g of a sample is extracted with 95 g of pure water at 125° C. for 20 hours, the conductivity of the extracted water is preferably 80 μs/cm or less. Epoxy resin refers to all compounds having an epoxy group, and includes common names such as bisphenol epoxy, phenol novolak epoxy resin, and heterocyclic epoxy resin. The curing accelerator refers to any catalyst that accelerates the curing of the epoxy resin composition, and includes common names such as imidasols, tertiary amines, organic phosphorus compounds, and organic aluminum compounds. Examples of the filler include silica, mica, glass, clay, asbestos, and alumina. Among these, silica is particularly preferred. The silica having cavities (hereinafter referred to as hollow silica) of the present invention refers to any silica-like substance having cavities inside, and may be a natural product, a processed product of a natural product, or a synthetic product. For example, silica balloons, shirasu balloons, fired products and thermal sprayed products of silica gel and silicone (SilaPearl/Chitsuso, Silstar/Nippon Kagaku Kogyo, etc.), alkoxysilane polymers (MSP/Nikko Fine Chemicals, XC-99/Toshiba Silicone) can be mentioned. The cavity of hollow silica has a size of 1/3 or less of the silica diameter and 5 μm or less, and a volume of 1/50 to 1/2 of the silica volume.
It is preferable that Too large, too few, or too many cavities may have an adverse effect. For example, if it is too large or too large, strength and moisture resistance may decrease, and if it is too small, thermal shock resistance may deteriorate. The amount of hollow silica used is preferably 1/10 to 2/3 (weight ratio) of the filler. If it is too small, thermal shock resistance may deteriorate, and if it is too large, strength and moisture resistance may be reduced. [Effects of the Invention] According to the present invention, it is possible to obtain an epoxy resin-encapsulated semiconductor that maintains reliability equal to or higher than conventional semiconductors even under severe mounting conditions such as solder immersion. That is, it has become possible to use a rational mounting method - solder dipping - aimed at mass production and low cost, and it has also been possible to make the semiconductor more versatile. Semiconductors are still commonly used in daily life, and it is expected that the present invention will make semiconductors even more versatile in the future and help improve living standards. [Example] A study example of a molding material for semiconductor encapsulation will be described below. All parts used in the study examples are parts by weight.
The raw materials used are as follows. Epoxy resin Dainippon Ink Chemical Epicron N-66PUP Filler Ryumori Fuzurex (fused silica) Curing agent Sumitomo Bakelite Phenol Novolac Curing accelerator Hokuko Chemical TPP Surface treatment agent Shin-Etsu Chemical KBM-803P Pigment Denki Kagaku Kogyo Carbon Mold release agent Mitsuya Wax # 1 Conventional low-stress additives Shin-Etsu Chemical KF-100 (epoxy-modified silicone oil) Ube Industries CTBN-terminated butadiene-acid containing carboxyl groups
Rylonitrile Rubber 1300 Hollow Silica Silas Balloon Silica Balloon Silapearl MSP The properties of hollow silica are shown in Table 1.
【表】
検討例
エポキシ樹脂20部、硬化剤10部、充填材（70−
ｘ）部、中空シリカｘ部、硬化促進剤0.2部、表
面処理剤0.5部、顔料0.5部、離型剤0.5部、従来の
低応力添加剤ｙ部を表−２に従つて混合後100℃
の熱ロールで３分間混練し、半導体封止用成形材
料８種を得た。これら材料の特性及び模擬ICの
特性に関する評価結果を表−２に示す。表−２よ
り明らかなように本発明の中空シリカを用いるこ
とにより半田浸漬後の特性が大幅に向上する。特
に、好ましい範囲で用いた場合には抜群の効果が
ある。[Table] Study example: 20 parts of epoxy resin, 10 parts of hardening agent, filler (70-
x) part, hollow silica x part, curing accelerator 0.2 part, surface treatment agent 0.5 part, pigment 0.5 part, mold release agent 0.5 part, and conventional low stress additive y part were mixed according to Table 2 at 100°C.
The mixture was kneaded for 3 minutes using a heated roll to obtain 8 types of molding materials for semiconductor encapsulation. Table 2 shows the evaluation results regarding the characteristics of these materials and the characteristics of the simulated IC. As is clear from Table 2, by using the hollow silica of the present invention, the properties after solder immersion are significantly improved. In particular, when used within a preferable range, it has outstanding effects.
【表】【table】
Claims (1)
材からなるエポキシ樹脂組成物において、全充填
材量の1/10〜2/3（重量比）が内部に空洞を有す
るシリカであり、該シリカの空洞の大きさがシリ
カ径の1/3以下で、かつ5μm以下であることを特
徴とする半導体封止用エポキシ樹脂組成物。 ２ 空洞の全体積がシリカ体積の1/50〜1/2であ
ることを特徴とする特許請求の範囲第１項記載の
半導体封止用エポキシ樹脂組成物。[Claims] 1. In an epoxy resin composition consisting of an epoxy resin, a curing agent, a curing accelerator, and a filler, 1/10 to 2/3 (weight ratio) of the total filler amount is silica having cavities inside. An epoxy resin composition for semiconductor encapsulation, wherein the size of the silica cavity is 1/3 or less of the silica diameter and 5 μm or less. 2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the total volume of the cavities is 1/50 to 1/2 of the volume of the silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP142786A JPS62161851A (en) | 1986-01-09 | 1986-01-09 | Epoxy resin composition for sealing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP142786A JPS62161851A (en) | 1986-01-09 | 1986-01-09 | Epoxy resin composition for sealing semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62161851A JPS62161851A (en) | 1987-07-17 |
| JPH0588732B2 true JPH0588732B2 (en) | 1993-12-24 |
Family
ID=11501157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP142786A Granted JPS62161851A (en) | 1986-01-09 | 1986-01-09 | Epoxy resin composition for sealing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62161851A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH062799B2 (en) * | 1988-04-20 | 1994-01-12 | 住友ベークライト株式会社 | Epoxy resin composition for semiconductor encapsulation |
| JPH062801B2 (en) * | 1988-04-28 | 1994-01-12 | 住友ベークライト株式会社 | Epoxy resin composition for semiconductor encapsulation |
| JPH0282644A (en) * | 1988-09-20 | 1990-03-23 | Fujitsu Ltd | Semiconductor device |
| JPH0370972U (en) * | 1989-11-14 | 1991-07-17 | ||
| JP5864299B2 (en) * | 2012-02-24 | 2016-02-17 | 味の素株式会社 | Resin composition |
-
1986
- 1986-01-09 JP JP142786A patent/JPS62161851A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62161851A (en) | 1987-07-17 |
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