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JPH059483B2 - - Google Patents
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JPH059483B2 - - Google Patents

Info

Publication number
JPH059483B2
JPH059483B2 JP58131759A JP13175983A JPH059483B2 JP H059483 B2 JPH059483 B2 JP H059483B2 JP 58131759 A JP58131759 A JP 58131759A JP 13175983 A JP13175983 A JP 13175983A JP H059483 B2 JPH059483 B2 JP H059483B2
Authority
JP
Japan
Prior art keywords
support
melting point
electron beam
ultrafine powder
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58131759A
Other languages
Japanese (ja)
Other versions
JPS6024305A (en
Inventor
Saburo Iwama
Eiichi Shichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Original Assignee
Daido Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daido Steel Co Ltd filed Critical Daido Steel Co Ltd
Priority to JP58131759A priority Critical patent/JPS6024305A/en
Publication of JPS6024305A publication Critical patent/JPS6024305A/en
Publication of JPH059483B2 publication Critical patent/JPH059483B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • B22F1/054Nanosized particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/02Making metallic powder or suspensions thereof using physical processes
    • B22F9/12Making metallic powder or suspensions thereof using physical processes starting from gaseous material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Description

【発明の詳細な説明】 この発明は、高融点物質を溶融させそれを蒸発
させることによつて、上記物質の超微粉末を製造
する装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for producing ultrafine powder of a high melting point substance by melting the substance and evaporating it.

従来の高融点物質超微粉末の製造装置にあつ
て、長寸の材料を横置し、軸心を水平方向に向け
て順次繰り出し、その繰り出された材料の先端外
周面に対して電子ビームを上方より直交状に照射
し、それにより上記材料の先端外周面を溶融蒸発
させることにより超微粉末を得るようにした装置
が提供されている。このような装置によれば上記
材料の先端部において加熱された材料が雫状とな
つて下側に垂れ下がつて電子ビームが当らなくな
る傾向がある。その為、上記材料を水冷銅モール
ドで冷却し、その冷却されている材料に上記ビー
ムを照射していた(例えば特開昭49−48541号公
報参照)。このようにすると材料のの垂れ下がり
は防止できるが上記電子ビームによるエネルギー
供給量に比べ蒸発量が極めて少なくなり、従つて
エネルギー量に対しても、また供給時間に対して
もわずかな量の粉末しか得られなくなる大きな問
題点があつた。
In conventional equipment for producing ultrafine powder of high-melting-point substances, a long material is placed horizontally, the axis of the material is oriented in the horizontal direction, and the material is sequentially fed out, and an electron beam is applied to the outer peripheral surface of the tip of the material. An apparatus has been provided in which ultrafine powder is obtained by irradiating orthogonally from above and thereby melting and vaporizing the outer circumferential surface of the tip of the material. According to such a device, the material heated at the tip of the material tends to form a droplet shape and hang downward, so that the electron beam does not hit the material. Therefore, the above-mentioned material was cooled in a water-cooled copper mold, and the cooled material was irradiated with the above-mentioned beam (for example, see Japanese Patent Laid-Open No. 49-48541). This method can prevent the material from sagging, but the amount of evaporation is extremely small compared to the amount of energy supplied by the electron beam, and therefore only a small amount of powder is produced relative to the amount of energy and supply time. There was a big problem that made it impossible to get anything.

そこで本願発明は照射室内に高融点物質の材料
を支持する為の支持体を備えさせ、その支持体に
よつて支持する高融点物質の材料に上方から電子
ビームを照射することにより上記材料の上部を溶
融させて蒸発させ、その蒸発によつてできた上記
材料の超微粉末を回収手段により回収して上記材
料の超微粉末を得るようにしている高融点物質超
微粉末の製造装置において、上記支持体の上面に
は、夫々高融点物質の材料を定置させるために凹
状に形成された複数の載置部を配置し、各載置部
にあつては上記材料の下部の周囲に圧接させて上
記材料を樹立状態で定着させる為の載置面と、載
置面に載置した上記材料の下側に間隙を形成する
為の凹部を形成し、その上、上記支持体は、上記
各載置部に定着される複数の上記材料を上記電子
ビームに対し選択的照射を可能に横動自在にする
ことにより、上記問題点を解決するようにしたも
ので、高融点物質の材料の下側を支持して樹立さ
せることができ、その結果材料の上面に電子ビー
ムを照射することができ、その上材料は熱的に浮
上して支持体とは熱遮断されるようにしたもの
で、材料の蒸発量を極めて多くすることができて
多量の粉末を得ることができ、しかもその場合、
供給エネルギー量に比べて多量の粉末を得る事が
でき、その上熱効率も高め得る様にした高融点物
質超微粉末の製造方法を提供しようとするもので
ある。
Therefore, the present invention provides a support for supporting the high-melting point material in the irradiation chamber, and irradiates the high-melting point material supported by the support with an electron beam from above. In an apparatus for producing ultrafine powder of a high melting point substance, the apparatus melts and evaporates the material, and collects the ultrafine powder of the material produced by the evaporation using a recovery means to obtain the ultrafine powder of the material, A plurality of concave placing parts are disposed on the upper surface of the support, each having a concave shape for placing a high melting point substance, and each placing part is pressed against the periphery of the lower part of the material. a mounting surface for fixing the material in an established state, and a recess for forming a gap under the material placed on the mounting surface; The above-mentioned problem is solved by making the plurality of above-mentioned materials fixed on the mounting part horizontally movable to enable selective irradiation with the above-mentioned electron beam. The material can be erected by supporting the sides, and as a result, the upper surface of the material can be irradiated with an electron beam, and the material can be thermally levitated and thermally isolated from the support. The amount of evaporation of the material can be extremely increased and a large amount of powder can be obtained, and in that case,
The object of the present invention is to provide a method for producing ultrafine powder of a high melting point substance, which allows a large amount of powder to be obtained compared to the amount of energy supplied, and which also improves thermal efficiency.

以下本願の実施例を示す図面について説明す
る。第1図乃至第3図において、1は照射室で、
内部が密閉できるように形成されている。次に照
射室1に備えられた支持装置において、2は支持
杆で、矢印方向に進退できるようになつており、
又シール部材3によつて照射室1の内部と外部と
がシールされている。4は支持杆2の先端に取り
付けられた支持体で、ロールを備える支持台4a
の上を第1図において左右に移動できるようにな
つている。この支持体4としては、後述の材料と
同質の材料で形成されたものを用いるのが純度の
高い粉末を得る上において好ましい。5は支持体
4に備えられた複数の載置部で、凹状に形成され
ている。6は環状の載置面を示し、これは粗面に
形成して表面に凹凸ができる様にしておくとよ
い。7は載置部5における中央部に備えられた凹
部を示す。8は高融点物質の材料で、円柱状に形
成されている。その高融点物質としては、タング
ステン、タンタル、ジルコニウム、ニオブ、モリ
ブデン等がある。この材料8の寸法は、その直径
が5mm乃至50mm程度、高さも同様に5mm乃至50mm
程度のものが用いられる。尚この材料8の形状は
円柱状に限らず角柱状でもよい。次に10は照射
室1の上部に備えられた電子ビーム照射装置を示
す。この装置10は周知のもので、ケーシング1
1内に、陰極12、陽極13から成る電子銃14
や、電子レンズ15を備えさせて構成してある。
16は陰極12に接続したフイラメント用の電源
で、フイラメント電流を調節できる様に構成して
ある。17は陰極12と陽極13に接続した電子
ビーム加速用の電源で、上記両極12,13の間
にかける電圧を調節できる様になつている。18
は装置10から発せられた電子ビームを示す。1
9a,20は周知の排気口で、周知の如く図示外
の真空ポンプに接続されて照射室1内を真空にす
る為に設けられたものである。19bはガス導入
口を示す。次に21は照射室1内に備えられた回
収手段を示す。この回収手段21において、22
は円筒形の器体で矢印方向への回動を自在に構成
してあり、図示はしないがモータによつて矢印方
向に低速回動させられる様になつている。またこ
れは電源22aによつてプラスに荷電されるよう
になつている。23は器体22内に備えさせた冷
却媒体で、例えば液体窒素が用いられる。24は
掻き落し片で、その一端24aは照射室1と一体
の支持部材に枢着してあり、他端24bはバネ2
4cの付勢力によつて器体22の外周面に弾接さ
せてある。24はホツパー、26は回収容器を
夫々示す。27は照射室1の側壁に備えられた覗
き窓を示し、照射室1内での作業状態を監視する
為に形成されている。又図示はしないが照射室1
の側壁には、材料8の装入あるいは製造された微
粉末を貯えている容器26の取り出しの為の作業
口が周知の如く設けられている。
The drawings showing the embodiments of the present application will be described below. In Figures 1 to 3, 1 is an irradiation chamber;
The inside is designed to be airtight. Next, in the support device provided in the irradiation chamber 1, 2 is a support rod, which can move forward and backward in the direction of the arrow.
Further, the inside and outside of the irradiation chamber 1 are sealed by a sealing member 3. Reference numeral 4 denotes a support body attached to the tip of the support rod 2, and a support base 4a equipped with a roll.
It is designed to be able to move left and right on the top of Figure 1. It is preferable to use the support 4 made of the same material as the material described below in order to obtain powder with high purity. Reference numeral 5 designates a plurality of mounting portions provided on the support body 4, which are formed in a concave shape. Reference numeral 6 indicates an annular mounting surface, which is preferably formed to have a rough surface so that the surface is uneven. Reference numeral 7 indicates a recessed portion provided at the center of the mounting portion 5. Reference numeral 8 is a high melting point material and is formed into a cylindrical shape. Examples of the high melting point substance include tungsten, tantalum, zirconium, niobium, and molybdenum. The dimensions of this material 8 are approximately 5 mm to 50 mm in diameter and 5 mm to 50 mm in height.
A certain degree is used. Note that the shape of this material 8 is not limited to a cylindrical shape, but may be a prismatic shape. Next, reference numeral 10 indicates an electron beam irradiation device provided in the upper part of the irradiation chamber 1. This device 10 is well known and includes a casing 1
1 includes an electron gun 14 consisting of a cathode 12 and an anode 13.
It is also configured to include an electronic lens 15.
16 is a power source for the filament connected to the cathode 12, and is configured so that the filament current can be adjusted. Reference numeral 17 denotes a power source for accelerating the electron beam connected to the cathode 12 and anode 13, so that the voltage applied between the two electrodes 12 and 13 can be adjusted. 18
shows the electron beam emitted from the device 10. 1
Reference numerals 9a and 20 are well-known exhaust ports, which are connected to a vacuum pump (not shown) and are provided to evacuate the inside of the irradiation chamber 1, as is well-known. 19b indicates a gas inlet. Next, reference numeral 21 indicates a recovery means provided within the irradiation chamber 1. In this recovery means 21, 22
is a cylindrical container that can be freely rotated in the direction of the arrow, and is adapted to be rotated at a low speed in the direction of the arrow by a motor (not shown). Further, it is configured to be positively charged by the power source 22a. 23 is a cooling medium provided in the container body 22, and liquid nitrogen is used, for example. 24 is a scraping piece, one end 24a of which is pivotally connected to a supporting member integral with the irradiation chamber 1, and the other end 24b of which is attached to a spring 2.
It is brought into elastic contact with the outer peripheral surface of the vessel body 22 by the biasing force 4c. 24 represents a hopper, and 26 represents a collection container. Reference numeral 27 indicates a viewing window provided on the side wall of the irradiation chamber 1, which is formed to monitor the working conditions within the irradiation chamber 1. Although not shown, irradiation chamber 1
As is well known, a working opening is provided in the side wall of the container 26 for charging the material 8 or taking out the container 26 storing the manufactured fine powder.

上記構成のものにあつては、まず支持体4にお
ける載置部5に夫々材料8を載置し各材料を樹立
状態にする。然る後排気口19a,20を介して
排気し照射室1内を高真空(10-6トル位)まで減
圧させる。然る後、必要に応じて導入口19bを
介して雰囲気用のガスを照射室1内に導入し、照
射室1内を低圧ガス雰囲気(約1トル)の状態に
保つようにする。この状態において、電源16,
17から陰極12や陽極13に夫々周知の如く電
気を供給し電子ビーム18を発射させる。又この
電子ビーム18は電子レンズ15によつて材料8
の頂面で材料寸法に応じた大きさに集束する様に
する。上記の様な操作により材料8の頂面に電子
ビーム18が照射されると、材料8の頂面は溶融
しそこに第3図に示される如く溶融部8aが形成
される。この溶融部8aの上面周辺部は表面張力
によつて円くなつている。尚第3図において8b
は固体部を示す。このように材料8の頂面を溶融
させる場合、その頂面の全域が溶融ししかも溶融
物がその頂面から溢れて流下しない様に、電子ビ
ーム18のエネルギー供給量を調節する。その調
節は電源16の可変操作によつてフイラメント電
流を調節して行なつてもよいし、電源17の可変
操作によつて陰極12と陽極13との間にかける
電圧を調節して行なつてもよい。又電子ビーム1
8を図示しない偏向コイルを用いて材料8の頂面
内で振らせることが、直径の大きな材料8に一様
な温度の溶融部8aを作るために極めて有効な手
段になる。上記材料8の寸法とエネルギー供給量
の関係の一例を示せば、材料8の直径が5mm、高
さが5mmの場合、エネルギー供給量は例えば
800Wである。又直径が10mm、高さが10mmの場合、
6.5kW程度である。更にまた直径が50mm、高さが
5mm程度の場合、80kW程度である。
In the case of the above structure, first, the materials 8 are respectively placed on the placing portions 5 of the support 4 to bring each material into an established state. Thereafter, the irradiation chamber 1 is evacuated through the exhaust ports 19a and 20 to reduce the pressure in the irradiation chamber 1 to a high vacuum (approximately 10 -6 Torr). Thereafter, an atmosphere gas is introduced into the irradiation chamber 1 through the inlet 19b as required to maintain the interior of the irradiation chamber 1 in a low pressure gas atmosphere (about 1 torr). In this state, the power supply 16,
Electricity is supplied from the electron beam 17 to the cathode 12 and the anode 13 in a well-known manner to emit an electron beam 18. Also, this electron beam 18 is transmitted to the material 8 by the electron lens 15.
It is made to converge at the top surface to a size that corresponds to the material dimensions. When the top surface of the material 8 is irradiated with the electron beam 18 by the above-described operation, the top surface of the material 8 is melted and a fused portion 8a is formed thereon as shown in FIG. The periphery of the upper surface of the melted portion 8a is rounded due to surface tension. In addition, 8b in Figure 3
indicates the solid part. When melting the top surface of the material 8 in this manner, the amount of energy supplied by the electron beam 18 is adjusted so that the entire area of the top surface is melted and the melt does not overflow from the top surface and flow down. The adjustment may be performed by adjusting the filament current by variable operation of the power source 16, or by adjusting the voltage applied between the cathode 12 and the anode 13 by variable operation of the power source 17. Good too. Also electron beam 1
Swinging the melt 8 within the top surface of the material 8 using a deflection coil (not shown) is an extremely effective means for creating a molten zone 8a with a uniform temperature in the material 8 having a large diameter. To give an example of the relationship between the dimensions of the material 8 and the amount of energy supplied, if the diameter of the material 8 is 5 mm and the height is 5 mm, the amount of energy supplied is, for example
It is 800W. Also, if the diameter is 10mm and the height is 10mm,
It is about 6.5kW. Furthermore, if the diameter is 50 mm and the height is about 5 mm, the power output is about 80 kW.

上記のように広い溶融部8aが形成されるとそ
の溶融部8aの全域から上記材料の蒸気が多量に
発生する。その蒸気は周知の如く凝結して超微粉
末が生成されると共に、その生成の間に超微粉末
はマイナスの電位に帯電する。その為、上記超微
粉末はプラス電位に荷電された器体22の方向に
吸引されその外周面に付着する。そして該器体2
2が回転するにつれてその外周面に付着した超微
粉末は掻き落し片24の作用で掻き落とされ、そ
の掻き落とされた超微粉末はホツパー25を通し
て容器26の中に逐次回収される。
When the wide melting area 8a is formed as described above, a large amount of vapor of the above material is generated from the entire area of the melting area 8a. As is well known, the vapor condenses to produce ultrafine powder, and during the formation, the ultrafine powder is charged to a negative potential. Therefore, the ultrafine powder is attracted toward the positively charged container body 22 and adheres to its outer peripheral surface. And the vessel 2
As the roller 2 rotates, the ultrafine powder adhering to its outer peripheral surface is scraped off by the action of the scraping piece 24, and the scraped ultrafine powder is successively collected into the container 26 through the hopper 25.

上記のように材料8の溶融が行なわれる場合、
材料8は支持体4の上に載置したものである為、
その材料8と支持体4との間の熱抵抗は極めて大
きくなつている。その為、材料8から支持体4に
向けて伝導によつて逃げる熱量は極めて小さく保
たれる。しかも上記構成の場合、載置部5におい
ては凹部7が形成されて載置面6の面積が小さく
なつており、その上その載置面6も粗面に形成さ
れて材料8との間の熱抵抗がより大きくなつてい
る為上記熱量の損失は一層小さく保たれる。
When the material 8 is melted as described above,
Since the material 8 is placed on the support 4,
The thermal resistance between the material 8 and the support 4 is extremely high. Therefore, the amount of heat escaping from the material 8 toward the support 4 by conduction is kept extremely small. Furthermore, in the case of the above configuration, the recess 7 is formed in the placement section 5, reducing the area of the placement surface 6. Moreover, the placement surface 6 is also formed to have a rough surface, so that the space between it and the material 8 is reduced. Due to the larger thermal resistance, the loss of heat is kept smaller.

上記のような操作によつて一つの材料8がほぼ
全体にわたり消費されてしまつたならば、電子ビ
ーム照射装置10の作動を停止させ、支持杆2を
操作して支持体4を第1図において右方に移動さ
せ、次の材料8が電子ビーム照射装置10の下に
来る様にする。そして前述と同様の作業を繰り返
して行なえばよい。
When one material 8 is almost completely consumed by the above-described operation, the operation of the electron beam irradiation device 10 is stopped, and the support rod 2 is operated to move the support body 4 as shown in FIG. Move it to the right so that the next material 8 is under the electron beam irradiation device 10. Then, the same operations as described above may be repeated.

上記の様な繰り返し作業の後、全ての材料8が
粉末形成の為に消費されてしまつたならば、電子
ビーム照射装置10を停止させると共に照射室1
内を常圧に戻し、作業口を通して新しい材料の装
入及び生成されて容器26内に貯えられている超
微粉末の取り出しを行なう。
After the above-described repeated operations, if all the material 8 has been consumed for powder formation, the electron beam irradiation device 10 is stopped and the irradiation chamber 1
The inside is returned to normal pressure, and a new material is charged through the working port and the produced ultrafine powder stored in the container 26 is taken out.

次に上記のようにして粉末の生成をする実験を
行なつた結果の一例を示せば、直径が5mm、高さ
が5mmのタングステンの材料を用い、上記エネル
ギー供給量が800Wで超微粉末の生成を行なつた
ところ、1時間あたり1.5gの超微粉末を回収する
事ができた。
Next, to give an example of the results of an experiment to generate powder as described above, using a tungsten material with a diameter of 5 mm and a height of 5 mm, the amount of energy supplied was 800 W, and ultrafine powder was generated. During the production, we were able to collect 1.5g of ultrafine powder per hour.

次に種々の異なる態様を示せば、支持体4と材
料8との関係は、支持体の平担な上面に材料を一
つだけ載せてそれを溶融、蒸発させてもよい。
Next, in various different embodiments, the relationship between the support 4 and the material 8 may be such that only one material is placed on the flat upper surface of the support and then melted and evaporated.

また回収手段としては、他の構成のもの、例え
ば冷媒を入れた容器を照射室内に置いて、その容
器の表面に粉末を付着させるようにしたものを用
いてもよい。
Further, as the collection means, one having another structure, such as one in which a container containing a refrigerant is placed in the irradiation chamber and powder is adhered to the surface of the container, may be used.

次に第4図は本願の異なる実施例を示すもの
で、照射室内に備えられる支持装置の異なる例を
示すものである。図において、30は回動装置、
31はその回転軸で、回転軸31の上端に円盤型
の支持体4eが取付けてある。
Next, FIG. 4 shows a different embodiment of the present application, and shows a different example of a support device provided within the irradiation chamber. In the figure, 30 is a rotating device;
Reference numeral 31 denotes a rotating shaft thereof, and a disk-shaped support 4e is attached to the upper end of the rotating shaft 31.

このような支持装置を用いた場合、一つの材料
8eが消費されてしまつたならば、回転軸31を
回転させて、支持体4eをその上に置かれた次の
材料8eが電子ビーム照射装置の下に来る様に移
動させる。そしてその材料について同様の操作を
行なえばよい。
When using such a support device, if one material 8e is consumed, the rotating shaft 31 is rotated and the next material 8e with the support 4e placed thereon is transferred to the electron beam irradiation device. Move it so that it is below. Then, similar operations can be performed on that material.

なお、機能上前図のものと同一又は均等構成と
考えられる部分には、前図と同一の符号にアルフ
アベツトのeを付して重複する説明を省略した。
(また次図のものにおいても同様の考えでアルフ
アベツトのfを付して重複する説明を省略する。) 次に第5図は本願の更に異なる実施例を示すも
のである。図において、32は受片で、その周囲
が環状の凹部7fとなるようにしてある。また材
料8fの周囲には筒状の囲い33が配設されてい
る。このような構成のものにあつては、載置面6
fの面積即ち材料8fと支持体4fとの接触面積
がより一層小さくなつて、両者間での熱抵抗を前
記実施例に比べてより一層高くする事ができ、前
記熱の損失をより少なくする事ができる。また囲
い33の存在によつて、材料8fの周側面からの
放射による熱の損失を少なくする事ができる。尚
上記囲い33としては材料8fと同質のものを用
いるのが粉末の純度を高く保つ上において好まし
い。
It should be noted that the same reference numerals as those in the previous figure are appended with an alphanumeric letter "e" for parts that are functionally the same or equivalent to those in the previous figure, and redundant explanations are omitted.
(Furthermore, in the following figure, the same idea is given and the redundant explanation is omitted by adding an alphanumeric character f.) Next, FIG. 5 shows a further different embodiment of the present application. In the figure, reference numeral 32 denotes a receiving piece, around which is formed an annular recess 7f. Further, a cylindrical enclosure 33 is arranged around the material 8f. In the case of such a configuration, the mounting surface 6
The area of f, that is, the contact area between the material 8f and the support 4f becomes even smaller, making it possible to further increase the thermal resistance between the two compared to the embodiment described above, thereby further reducing the heat loss. I can do things. Furthermore, the presence of the enclosure 33 can reduce heat loss due to radiation from the peripheral side of the material 8f. It is preferable to use the same material as the material 8f for the enclosure 33 in order to maintain high purity of the powder.

以上のようにこの発明にあつては、 (イ) 材料8の粉末を得ようとする場合、その材料
の一部に電子ビームを照射しそこを加熱溶融さ
せてその原子を蒸発させ、蒸発した材料の原子
を粉末にして回収するから極めて細かい粉末を
得られる特長がある。
As described above, in the present invention, (a) When attempting to obtain powder of material 8, a part of the material is irradiated with an electron beam to heat and melt it to evaporate its atoms. It has the advantage of being able to obtain extremely fine powder because it collects the atoms of the material in powder form.

(ロ) しかも上記の場合、本願発明の装置によれば
材料8を樹立し、下側を受止めた状態で上面に
ビーム18を照射し上面より蒸発させることが
できる。このことは従来のように材料を横置し
てその外周を上方より加熱する場合とは異なつ
て、材料8を加熱しても型崩れし難いことにな
り、単位時間当りの蒸発量を大きくすることの
できる効果がある。
(b) Moreover, in the above case, according to the apparatus of the present invention, the material 8 can be established, and the upper surface can be irradiated with the beam 18 while the lower side is received, and the beam 18 can be evaporated from the upper surface. This means that, unlike the conventional case in which the material is placed horizontally and its outer periphery is heated from above, the material 8 is less likely to lose its shape even when heated, increasing the amount of evaporation per unit time. There are certain effects that can be achieved.

(ハ) 更に下方を支持して型崩れし難い状態にある
材料8に対しては、その下方の一部に間隙7を
形成して、熱的にはあたかも支持体4から浮上
させた状態にすることができる。これによりビ
ーム18によつて僅かなエネルギーが材料8の
上面に与えられても、その熱的効果は大きく、
材料8の上面からエネルギー量に比較して多大
の蒸発量を得ることのできる画期的な効果もあ
る。
(C) Furthermore, for the material 8 which is supported downwardly and is in a state where it is difficult to lose its shape, a gap 7 is formed in a part of the lower part of the material 8, so that the material 8 is thermally maintained as if it were floating from the support body 4. can do. As a result, even if a small amount of energy is applied to the upper surface of the material 8 by the beam 18, the thermal effect is large.
There is also an epoch-making effect in that a large amount of evaporation can be obtained from the upper surface of the material 8 compared to the amount of energy.

(ニ) その上支持体4の上面には複数の材料8、
8,8が並設できるので、次々と異なる材料8
にビーム18を選択照射することにより、複数
の材料8を用いて連続的に次々と蒸発作業を行
うことのできる作業上の効果もある。
(d) Moreover, on the upper surface of the support 4, a plurality of materials 8,
8 and 8 can be placed side by side, so different materials 8 can be placed one after another.
By selectively irradiating the beam 18, there is also the operational effect that the evaporation work can be performed continuously using a plurality of materials 8 one after another.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本願の実施例を示すもので、第1図は超
微粉末生成装置の縦断面略示図、第2図は支持体
と材料との関係を示す断面図、第3図は材料の溶
融状態を示す断面図、第4図は支持装置の異なる
例を示す斜視図、第5図は材料と支持体との関係
の異なる実施例を示す断面図。 1……照射室、4……支持体、8……材料、1
8……電子ビーム、21……回収手段。
The drawings show examples of the present application, in which Fig. 1 is a schematic vertical cross-sectional view of an ultrafine powder generating device, Fig. 2 is a cross-sectional view showing the relationship between the support and the material, and Fig. 3 is a diagram showing the melting of the material. FIG. 4 is a perspective view showing a different example of the support device; FIG. 5 is a cross-sectional view showing a different example of the relationship between the material and the support. 1... Irradiation chamber, 4... Support, 8... Material, 1
8...electron beam, 21...recovery means.

Claims (1)

【特許請求の範囲】[Claims] 1 照射室内に高融点物質の材料を支持する為の
支持体を備えさせ、その支持体によつて支持する
高融点物質の材料に上方から電子ビームを照射す
ることにより上記材料の上部を溶融させて蒸発さ
せ、その蒸発によつてできた上記材料の超微粉末
を回収手段により回収して上記材料の超微粉末を
得るようにしている高融点物質超微粉末の製造装
置において、上記支持体の上面には、夫々高融点
物質の材料を定置させるために凹状に形成された
複数の載置部を配置し、各載置部にあつては上記
材料の下部の周囲に圧接させて上記材料を樹立状
態で定着させる為の載置面と、載置面に載置した
上記材料の下側に間隙を形成する為の凹部を形成
し、その上、上記支持体は、上記各載置部に定着
される複数の上記材料を上記電子ビームに対し選
択的照射を可能に横動自在にしてあることを特徴
とする高融点物質超微粉末の製造装置。
1. A support for supporting the high melting point material is provided in the irradiation chamber, and the upper part of the material is melted by irradiating the high melting point material supported by the support with an electron beam from above. In an apparatus for producing ultrafine powder of a high-melting point substance, the ultrafine powder of the material produced by the evaporation is collected by a recovery means to obtain an ultrafine powder of the material, wherein the support A plurality of concave placing parts are arranged on the upper surface to place high melting point materials, and each placing part is pressed against the lower part of the material to place the material. A mounting surface for fixing the material in an established state, and a recess for forming a gap under the material placed on the mounting surface, and the support body An apparatus for producing ultrafine powder of a high melting point substance, characterized in that a plurality of the materials fixed thereon are movable laterally to enable selective irradiation with the electron beam.
JP58131759A 1983-07-19 1983-07-19 Production of ultrafine powder of high melting material Granted JPS6024305A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58131759A JPS6024305A (en) 1983-07-19 1983-07-19 Production of ultrafine powder of high melting material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58131759A JPS6024305A (en) 1983-07-19 1983-07-19 Production of ultrafine powder of high melting material

Publications (2)

Publication Number Publication Date
JPS6024305A JPS6024305A (en) 1985-02-07
JPH059483B2 true JPH059483B2 (en) 1993-02-05

Family

ID=15065509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58131759A Granted JPS6024305A (en) 1983-07-19 1983-07-19 Production of ultrafine powder of high melting material

Country Status (1)

Country Link
JP (1) JPS6024305A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61223108A (en) * 1985-03-28 1986-10-03 Dia Shinku Giken Kk Method and apparatus for producing ultrafine particle
JP3411497B2 (en) 1998-03-25 2003-06-03 科学技術振興事業団 W ultrafine particles, method for producing the same, and W nanocrystal thin film
CN113976880B (en) * 2021-10-29 2023-01-24 西安交通大学 Method and device for preparing carbon-coated metal nanoparticles by electric arc in liquid nitrogen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948541A (en) * 1972-09-14 1974-05-10

Also Published As

Publication number Publication date
JPS6024305A (en) 1985-02-07

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