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JPH059518B2 - - Google Patents
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JPH059518B2 - - Google Patents

Info

Publication number
JPH059518B2
JPH059518B2 JP61210663A JP21066386A JPH059518B2 JP H059518 B2 JPH059518 B2 JP H059518B2 JP 61210663 A JP61210663 A JP 61210663A JP 21066386 A JP21066386 A JP 21066386A JP H059518 B2 JPH059518 B2 JP H059518B2
Authority
JP
Japan
Prior art keywords
plating
thin film
inorganic material
electrically insulating
insulating inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61210663A
Other languages
Japanese (ja)
Other versions
JPS6369982A (en
Inventor
Katsutoshi Kakizawa
Yutaka Hagiwara
Isao Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kawai Musical Instruments Manufacturing Co Ltd
Original Assignee
Kawai Musical Instruments Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawai Musical Instruments Manufacturing Co Ltd filed Critical Kawai Musical Instruments Manufacturing Co Ltd
Priority to JP21066386A priority Critical patent/JPS6369982A/en
Publication of JPS6369982A publication Critical patent/JPS6369982A/en
Publication of JPH059518B2 publication Critical patent/JPH059518B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229Composition of the substrate
    • C23C18/1245Inorganic substrates other than metallic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemically Coating (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

(産業上の利用分野) 本発明は、例えばガラス、セラミツク等の電気
絶縁性無機材料にメツキ処理を施す際の前処理と
しての、メツキ下地処理方法に関する。 更に詳しくは、本発明は電気メツキを施すこと
が出来ないセラミツク等の電気絶縁性無機材料の
表面に導電性の下地膜を形成し、該下地膜の上に
例えば銅、ニツケル等の金属の電気メツキを施す
ことを可能にするための下地処理方法であり、そ
して、本発明のメツキ下地処理方法によつて処理
された電気絶縁性無機材料の最終製品の用途は、
電子電気分野では絶縁性セラミツク基板へのメツ
キ回路、ヒーター分野では熱伝導性の低いセラミ
ツク基板表面に熱伝導性の高い例えば銅、金、銀
等の金属メツキを施すことにより基板の温度分布
を均一にしたホツトプレートや遠赤外線用ヒータ
ー基板である。 (従来の技術) 従来、この種のメツキ下地処理方法として、電
気絶縁性無機材料の表面に導電性を付与するため
に、該表面に導電性金属粉末を有機バインダーと
練合せたペーストを、刷毛塗り、ローラ塗布、ス
クリーン印刷等でコーテイングしてから焼結させ
る方法、或いは該表面に金属粉末を高速で吹付け
て物理的に付着させる方法、或いは該表面に金属
の塩化物溶液を吹き付けし、該表面に金属の薄膜
を形成する方法が知られている。 (発明が解決しようとする問題点) 前記従来のメツキ下地処理方法は、焼結させる
方法の場合には、ペーストや粘性を有するため
に、その均一なコーテイングが難しく、作業性が
悪いという不都合を有し、物理的に付着させる方
法の場合には、金属粉末の吹付けに特殊な装置を
用いねばならず、また金属粉末の無機材料に対す
る付着強度が弱い等の不都合を有し、また、金属
の塩化物溶液を吹き付けて薄膜を形成する方法の
場合には、金属の塩化物を用いているため、表面
に形成される金属薄膜中に塩素或いは塩化物が混
入されるのが避けられず、その結果無機質材料表
面にその後施される例えば銅、ニツケル等の金属
のメツキ材料がその下地膜となる金属薄膜中に存
在する塩素或いは塩化物により腐食が生じて変色
するばかりではなく変質して、メツキ材料の導電
性が低下したり、錆が生じるという不都合があ
る。 (問題点を解決するための手段) 本発明は前記不都合を解消した電気絶縁性無機
材料のメツキ下地処理方法を提供することをその
目的とするもので、その発明は、ガラス、セラミ
ツク等の電気絶縁性無機材料の、メツキ処理を施
す表面を、400℃〜700℃に加熱し、その表面に最
終形成物として導電性セラミツク薄膜となるジブ
チルチンジアセテートまたはジブチルチンジアセ
トアセトネートとエトキシアンチモンのアルコー
ル溶液を吹付け、該表面に導電性セラミツク薄膜
を形成することを特徴とする。 本発明は導電性セラミツク薄膜を酸化錫に少量
の酸化アンチモンをドープした酸化錫−酸化アン
チモン薄膜とした。 そして該導電性セラミツク薄膜の原料物質とし
てジブチルチンジアセテート、ジブチルチンジア
セトアセトネートのような錫の有機化合物と、エ
トキシアンチモンのようなアンチモンの有機化合
物を用い、前者に後者を少量加えたものをエタノ
ールのようなアルコールに溶解した溶液とした。 メツキ処理を施す表面の温度を400℃〜700℃に
加熱するのは、400℃以下では原料物質の熱分解
が起りにくく、また700℃を越えると原料物質が
該表面に到達する前に熱分解してしまい薄膜が充
分に生成しないからである。従つて、500℃〜600
℃の加熱が特に好ましい。 (実施例) 次に、本発明の実施例を説明する。 まず、分子式2MgO2・2Al2O3・5SiO2で示され
る焼結コージエライト基板を電気炉で500℃に加
熱する。この時、基板上の脂質は全て脱脂され
た。次で下記表に示す成分から成る導電性セラミ
ツクの原料物質を含む試料溶液No.1〜No.2の夫々
を、0.8Kg/cm2〜1.2Kg/cm2のスプレー圧で、500
℃に調整された基板上に吹付け、セラミツク薄膜
を形成した。試料溶液No.1〜No.2によつて得られ
たセラミツク薄膜は全て基板に強固に密着した膜
厚数千Å程度の均一な薄膜であつた。
(Industrial Application Field) The present invention relates to a plating base treatment method as a pretreatment when plating an electrically insulating inorganic material such as glass or ceramic. More specifically, the present invention involves forming an electrically conductive base film on the surface of an electrically insulating inorganic material such as ceramic, which cannot be electroplated, and depositing an electrically conductive layer of metal such as copper or nickel on the base film. This is a surface treatment method for making plating possible, and the uses of the final product of electrically insulating inorganic material treated by the plating surface treatment method of the present invention are as follows:
In the electronics and electrical field, circuits are plated on insulating ceramic substrates, and in the heating field, the surface of ceramic substrates with low thermal conductivity is plated with metals with high thermal conductivity, such as copper, gold, and silver, to ensure uniform temperature distribution on the substrate. These are hot plates and far-infrared heater boards. (Prior art) Conventionally, in this type of plating surface treatment method, in order to impart conductivity to the surface of an electrically insulating inorganic material, a paste prepared by kneading conductive metal powder with an organic binder is applied to the surface of the electrically insulating inorganic material using a brush. A method of coating the surface by painting, roller coating, screen printing, etc. and then sintering it, or a method of physically adhering it by spraying metal powder on the surface at high speed, or a method of spraying a metal chloride solution on the surface, A method of forming a thin metal film on the surface is known. (Problems to be Solved by the Invention) The conventional plating surface treatment method described above has the disadvantage that in the case of a sintering method, it is difficult to coat uniformly and the workability is poor due to the paste or viscosity. In the case of the method of physically adhering the metal powder, it is necessary to use special equipment to spray the metal powder, and there are disadvantages such as the weak adhesion strength of the metal powder to the inorganic material. In the case of the method of forming a thin film by spraying a chloride solution, since metal chloride is used, it is inevitable that chlorine or chloride will be mixed into the metal thin film formed on the surface. As a result, the metal plating material, such as copper or nickel, which is subsequently applied to the surface of the inorganic material, is not only corroded and discolored by the chlorine or chloride present in the underlying metal thin film, but also deteriorates in quality. There are disadvantages in that the conductivity of the plating material decreases and rust occurs. (Means for Solving the Problems) An object of the present invention is to provide a method for plating the base of electrically insulating inorganic materials that eliminates the above-mentioned disadvantages. The surface of the insulating inorganic material to be plated is heated to 400°C to 700°C, and an alcoholic solution of dibutyltin diacetate or dibutyltin diacetoacetonate and ethoxyantimony is applied to the surface to form a conductive ceramic thin film as the final product. The method is characterized in that a conductive ceramic thin film is formed on the surface by spraying. In the present invention, the conductive ceramic thin film is a tin oxide-antimony oxide thin film in which tin oxide is doped with a small amount of antimony oxide. Then, organic compounds of tin such as dibutyltin diacetate and dibutyltin diacetoacetonate and organic compounds of antimony such as ethoxyantimony are used as raw materials for the conductive ceramic thin film, and a small amount of the latter is added to the former and ethanol is added. It was made into a solution dissolved in an alcohol such as . The reason why the surface to be plated is heated to 400℃ to 700℃ is because thermal decomposition of the raw material is difficult to occur below 400℃, and if it exceeds 700℃, the raw material will be thermally decomposed before reaching the surface. This is because the thin film is not sufficiently formed. Therefore, 500℃~600
Particularly preferred is heating at .degree. (Example) Next, an example of the present invention will be described. First, a sintered cordierite substrate having the molecular formula 2MgO 2 .2Al 2 O 3 .5SiO 2 is heated to 500° C. in an electric furnace. At this time, all the lipids on the substrate were delipidated. Next, each of sample solutions No. 1 to No. 2 containing raw materials for conductive ceramics consisting of the components shown in the table below were sprayed at a spray pressure of 0.8 Kg/cm 2 to 1.2 Kg/cm 2 at 500 kg/cm 2 .
A ceramic thin film was formed by spraying onto a substrate whose temperature was adjusted to ℃. All of the ceramic thin films obtained with sample solutions No. 1 and No. 2 were uniform thin films with a thickness of about several thousand angstroms that adhered firmly to the substrate.

【表】 次に、前記試料溶液No.1〜No.2によつて下地処
理された各基板をニツケル濃度5.0g/lの無電解
ニツケル槽に浸漬し、90〜100℃に加温したとこ
ろ、各基板とも良好にメツキ処理が施されてい
た。尚、本実施例では無電解メツキ処理を施した
が、電解メツキ処理によれば更に良好なメツキ処
理を施すことができることは云うまでもない。 (発明の効果) このように、本発明の電気絶縁性無機材料のメ
ツキ下地処理方法によれば、メツキ処理を施す表
面を400℃〜700℃に加熱し、その表面に最終形成
物として導電性セラミツク薄膜となるジブチルチ
ンジアセテートまたはジブチルチンジアセトアセ
トネートとエトキシアンチモンのアルコール溶液
を吹付け、該表面に導電性セラミツク薄膜を形成
するようにしたので、メツキ下地となる溶液中に
は塩素或いは塩化物が全く含まれていないから、
電気絶縁性無機材料の表面に形成される導電性セ
ラミツク薄膜中には塩素が存在しないため、その
後該表面に施されるメツキ材料に対して何ら影響
を与えることのないメツキ下地を電気絶縁性無機
材料に均一な膜厚でもつて強固に付着する良好な
メツキ下地処理が極めて簡単に行える等の効果を
有する。
[Table] Next, each substrate treated with the above sample solutions No. 1 to No. 2 was immersed in an electroless nickel bath with a nickel concentration of 5.0 g/l and heated to 90 to 100°C. , each board was well plated. Although electroless plating was performed in this example, it goes without saying that even better plating can be achieved by electrolytic plating. (Effects of the Invention) As described above, according to the method for plating the electrically insulating inorganic material of the present invention, the surface to be plated is heated to 400°C to 700°C, and a conductive material is formed on the surface as the final product. Since we sprayed an alcoholic solution of dibutyltin diacetate or dibutyltin diacetoacetonate and ethoxyantimony to form a conductive ceramic thin film on the surface, there was no chlorine or chloride in the solution that served as the plating base. Because it does not contain any
Since chlorine does not exist in the conductive ceramic thin film formed on the surface of the electrically insulating inorganic material, the electrically insulating inorganic material is used as a plating base that does not have any effect on the plating material that is subsequently applied to the surface. It has the effect that it is extremely easy to perform a good plating base treatment that adheres firmly to the material with a uniform film thickness.

Claims (1)

【特許請求の範囲】[Claims] 1 ガラス、セラミツク等の電気絶縁性無機材料
の、メツキ処理を施す表面を400℃〜700℃に加熱
し、その表面に最終形成物として導電性セラミツ
ク薄膜となるジブチルチンジアセテートまたはジ
ブチルチンジアセトアセトネートとエトキシアン
チモンのアルコール溶液を吹付け、該表面に導電
性セラミツク薄膜を形成することを特徴とする電
気絶縁性無機材料のメツキ下地処理方法。
1. The surface of an electrically insulating inorganic material such as glass or ceramic to be plated is heated to 400°C to 700°C, and dibutyltin diacetate or dibutyltin diacetoacetonate is applied to the surface to form a conductive ceramic thin film as the final product. 1. A method for plating an electrically insulating inorganic material, which comprises spraying an alcoholic solution of antimony and ethoxyantimony to form a conductive ceramic thin film on the surface.
JP21066386A 1986-09-09 1986-09-09 Plating base treatment method for electrically insulating inorganic materials Granted JPS6369982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21066386A JPS6369982A (en) 1986-09-09 1986-09-09 Plating base treatment method for electrically insulating inorganic materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21066386A JPS6369982A (en) 1986-09-09 1986-09-09 Plating base treatment method for electrically insulating inorganic materials

Publications (2)

Publication Number Publication Date
JPS6369982A JPS6369982A (en) 1988-03-30
JPH059518B2 true JPH059518B2 (en) 1993-02-05

Family

ID=16593044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21066386A Granted JPS6369982A (en) 1986-09-09 1986-09-09 Plating base treatment method for electrically insulating inorganic materials

Country Status (1)

Country Link
JP (1) JPS6369982A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5175991A (en) * 1974-12-25 1976-06-30 Sharp Kk Tomeidenkyokuno seiho

Also Published As

Publication number Publication date
JPS6369982A (en) 1988-03-30

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