JPH06100512B2 - load cell - Google Patents
load cellInfo
- Publication number
- JPH06100512B2 JPH06100512B2 JP7492985A JP7492985A JPH06100512B2 JP H06100512 B2 JPH06100512 B2 JP H06100512B2 JP 7492985 A JP7492985 A JP 7492985A JP 7492985 A JP7492985 A JP 7492985A JP H06100512 B2 JPH06100512 B2 JP H06100512B2
- Authority
- JP
- Japan
- Prior art keywords
- strain
- connecting rod
- semiconductor
- semiconductor strain
- load cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 230000000694 effects Effects 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Force In General (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体ひずみゲージを変換素子として使用
した電子的な荷重計に関する。The present invention relates to an electronic load cell using a semiconductor strain gauge as a conversion element.
従来の荷重計は、抵抗線ひずみゲージ式の荷重計の検出
部のみを単に半導体ひずみゲージに置き換えたもので、
この種の半導体ひずみゲージを用いた荷重計の一例を第
３図及び第４図に示す。図において、11は、荷重Ｗによ
ってたわみを生じる円板状の受圧板を示し、この受圧板
11には、外部から作動棒12を介して荷重Ｗが加わる。受
圧板11は、円筒状のハウジング13に対して、螺合或いは
溶接されている。In the conventional load cell, only the detection part of the resistance wire strain gauge type load cell is replaced with a semiconductor strain gauge.
An example of a load meter using this type of semiconductor strain gauge is shown in FIGS. 3 and 4. In the figure, 11 indicates a disc-shaped pressure receiving plate that is bent by the load W.
A load W is applied to 11 from the outside through the actuating rod 12. The pressure receiving plate 11 is screwed or welded to the cylindrical housing 13.
受圧板11のたわみは、連結棒14を介して起わいビーム15
に伝達される。起わいビーム15は、板バネであって、起
わいビーム15の表面に長手方向のひずみが発生する。The deflection of the pressure receiving plate 11 is caused by the beam 15 generated via the connecting rod 14.
Be transmitted to. The wake beam 15 is a leaf spring, and a longitudinal strain is generated on the surface of the wake beam 15.
起わいビーム15の一方の固定端の近傍において、起わい
ビーム15の両面に同一の伝導形式の半導体ひずみゲージ
16,17の夫々が接着されている。半導体ひずみゲージ16,
17は、ピエゾ抵抗効果を利用したものである。半導体ひ
ずみゲージ16,17は、所謂２ゲージ法によるブリッジ結
線とされ、コード18を通じて外部に取り出される。In the vicinity of one fixed end of the wake beam 15, semiconductor strain gauges of the same conduction type are formed on both sides of the wake beam 15.
Each of 16 and 17 is glued. Semiconductor strain gauge 16,
17 uses the piezoresistive effect. The semiconductor strain gauges 16 and 17 are bridge-connected by a so-called 2-gauge method and are taken out to the outside through a cord 18.
一方の半導体ひずみゲージ16は、引張ひずみを検出し、
他方の半導体ひずみゲージ17は、圧縮ひずみを検出す
る。One of the semiconductor strain gauges 16 detects tensile strain,
The other semiconductor strain gauge 17 detects compressive strain.
従来の荷重計は、半導体ひずみゲージ16,17の長さの約
４倍以上の長さの起わいビーム15が必要となり、荷重計
の直径が大きくなる欠点があった。The conventional load cell has a drawback that the waviness beam 15 having a length about four times or more the length of the semiconductor strain gauges 16 and 17 is required, and the diameter of the load cell becomes large.
また、引張ひずみを受ける一方の半導体ひずみゲージ16
が破断しやすいので、過負荷特性がよくない欠点があっ
た。In addition, one of the semiconductor strain gauges that receives tensile strain 16
However, it has a drawback that the overload characteristics are not good because it is easy to break.
また、起わいビームの圧縮側で、起わいビームの中央部
に半導体ひずみゲージを取り付ける構成としては、第５
図Ａに示すように、連結棒14の固定位置の両側で、その
長手方向が同一線上に位置する関係で、半導体ひずみゲ
ージ16a、16bを取り付けるものが存在する。この構成に
おいて、連結棒14を介して第５図Ｂに示すように、荷重
Ｗが起わいビーム15に伝えられると、ひずみゲージ16
a、16bにひずみ変化が与えられる。In addition, as a configuration in which the semiconductor strain gauge is attached to the central portion of the rising beam on the compression side of the rising beam,
As shown in FIG. A, there is a type in which the semiconductor strain gauges 16a and 16b are attached on both sides of the fixed position of the connecting rod 14 so that the longitudinal directions thereof are on the same line. In this configuration, when the load W is transmitted to the beam 15 through the connecting rod 14 as shown in FIG.
Strain change is applied to a and 16b.
半導体ひずみゲージ16a、16bが存在する箇所において、
この起わいビーム15の長手方向のひずみ分布は、第５図
Ｃにおいて20a、20bで示すものとなる。すなわち、ひず
みゲージ16a、16bの受ける圧縮ひずみは、連結棒14の近
くのａ点が最大値となり、連結棒14から遠いｂ点が最小
値となる。連結棒14の固定位置では、ひずみが略０とな
る。Where the semiconductor strain gauges 16a, 16b are present,
The longitudinal strain distribution of the agitated beam 15 is shown by 20a and 20b in FIG. 5C. That is, regarding the compressive strain received by the strain gauges 16a and 16b, the point a near the connecting rod 14 has the maximum value, and the point b far from the connecting rod 14 has the minimum value. At the fixed position of the connecting rod 14, the strain becomes almost zero.
このように、ひずみの最大値をひずみゲージ16a、16bの
端部（ａ点）で受けることは、過負荷特性や繰り返し荷
重の疲労特性が悪い問題も生じる。ひずみゲージ16a、1
6bの両端部は、引き出し線を半導体に接合する部分であ
って、この部分は、ひずみを抵抗値変化へ変換する半導
体材料に比べてより厚い。従って、このリード線接合部
分近くの断面変化が大きいために、応力集中が起き、過
負荷荷重による破断がこの接合部分で発生し易い問題が
ある。As described above, receiving the maximum strain value at the ends (point a) of the strain gauges 16a and 16b causes a problem that the overload characteristic and the fatigue characteristic of the repeated load are bad. Strain gauge 16a, 1
Both ends of 6b are portions where the lead wire is joined to the semiconductor, and this portion is thicker than the semiconductor material that converts strain into resistance value change. Therefore, since there is a large change in the cross section near the lead wire joint portion, stress concentration occurs, and there is a problem that breakage due to overload easily occurs at this joint portion.
従って、この発明の目的は、小型であり、然も、過負荷
特性が優れた荷重計を提供することにある。Therefore, an object of the present invention is to provide a load cell that is small and yet has excellent overload characteristics.
この発明は、受圧板１と、その中央位置に連結棒４が固
定され、受圧板１の受ける力が連結棒４を介して伝達さ
れ、両端が固定された矩形板状の起わいビーム５と、起
わいビーム５の圧縮ひずみ側の面上であって、連結棒４
の固定位置の両側の位置に、その長手方向が起わいビー
ム５の長手方向と同方向に延長し、且つその長手方向が
向かい合うように取り付けられた半導体ひずみゲージ6,
7とを備えたことを特徴とする荷重計である。According to the present invention, a pressure receiving plate 1 and a connecting rod 4 fixed to a central position thereof, a force received by the pressure receiving plate 1 are transmitted through the connecting rod 4, and a rectangular plate-shaped flexible beam 5 having both ends fixed. , On the compression-strain side surface of the stir beam 5 and on the connecting rod 4
The semiconductor strain gauges 6, whose longitudinal directions extend in the same direction as the longitudinal direction of the beam 5, and which are mounted so as to face each other, on both sides of the fixed position of
The load cell is characterized by including 7 and.
受圧板１が受ける力で、起わいビーム５がひずみ、起わ
いビーム５の圧縮ひずみが半導体ひずみゲージ6,7によ
り検出される。受圧板１の中心部に半導体ひずみゲージ
6,7を設けるので、起わいビーム５の長さを短くでき、
荷重計を小型化できる。また、圧縮ひずみのみを検出
し、然も、起わいビーム５の最大ひずみを半導体ひずみ
ゲージ6,7の略中央部で受けるので、半導体ひずみゲー
ジ6,7が破断することを防止でき、過負荷特性を向上で
きる。The force received by the pressure receiving plate 1 causes the strain beam 5 to be distorted, and the compressive strain of the strain beam 5 is detected by the semiconductor strain gauges 6, 7. A semiconductor strain gauge is provided in the center of the pressure receiving plate 1.
Since 6,7 are provided, the length of the raising beam 5 can be shortened,
The load cell can be miniaturized. Moreover, since only the compressive strain is detected and the maximum strain of the beam 5 is received at the substantially central portion of the semiconductor strain gauges 6, 7, it is possible to prevent the semiconductor strain gauges 6, 7 from breaking and to prevent overload. The characteristics can be improved.
以下、この発明の一実施例について、第１図及び第２図
を参照して説明する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第１図及び第２図において、１は、荷重Ｗによってたわ
みを生じる円板状の受圧板を示し、この受圧板１には、
外部から作動棒２を介して荷重Ｗが加わる。受圧板１
は、剛性の高い金属材料からなる円筒状のハウジング３
に螺合或いは溶接されている。In FIG. 1 and FIG. 2, reference numeral 1 denotes a disc-shaped pressure receiving plate that is bent by a load W.
A load W is applied from the outside via the actuation rod 2. Pressure plate 1
Is a cylindrical housing 3 made of a highly rigid metal material.
Is screwed or welded to.
受圧板１のたわみは、連結棒４を介して起わいビーム５
に伝達される。起わいビーム５は、受圧板１と異なり、
ひずみが長手方向に発生し、温度変化の影響を殆ど受け
ないものである。起わいビーム５は、その両端がハウジ
ング３の内壁に形成された溝に係合され、更に、接着さ
れることで支持されたステンレス等の金属からなる板バ
ネである。The deflection of the pressure receiving plate 1 is caused by the beam 5 which is generated via the connecting rod 4.
Be transmitted to. The rising beam 5, unlike the pressure receiving plate 1,
The strain is generated in the longitudinal direction and is hardly affected by the temperature change. The erecting beam 5 is a leaf spring made of metal such as stainless steel, which is supported by engaging both ends with grooves formed in the inner wall of the housing 3 and further being adhered.
起わいビーム５の中心部即ち、連結棒４の固定位置の両
側に、起わいビーム５の長手方向と同方向に延長して、
その長手方向が向かい合うように、半導体ひずみゲージ
6,7の夫々が接着されている。半導体ひずみゲージ6,7
は、ピエゾ抵抗効果を利用したもので、両者の伝導形式
は、Ｐ型及びＮ型と相異ならされている。半導体ひずみ
ゲージ6,7は、所謂２ゲージ法によるブリッジ（ホィー
トストンブリッジ）結線とされ、コード８を通じて外部
に取り出される。At the center of the floating beam 5, that is, on both sides of the fixed position of the connecting rod 4, extend in the same direction as the longitudinal direction of the floating beam 5,
Semiconductor strain gauges so that their longitudinal directions face each other
Each of 6 and 7 is glued. Semiconductor strain gauge 6,7
Uses the piezoresistive effect, and their conduction types are different from those of the P type and the N type. The semiconductor strain gauges 6 and 7 are connected by a so-called 2-gauge method (wheatstone bridge) connection, and are taken out through a cord 8.
これらの半導体ひずみゲージ6,7は、共に圧縮ひずみを
検出する。These semiconductor strain gauges 6 and 7 both detect compressive strain.
尚、この発明の一実施例と異なり、起わいビームの長手
方向と平行して、連結棒の固定位置の両側に４個の半導
体ひずみゲージを設ける４ゲージ法の構成としても良
い。この場合には、両側の夫々にＰ型及びＮ型の半導体
ひずみゲージが設けられる。Unlike the embodiment of the present invention, a four-gauge method may be adopted in which four semiconductor strain gauges are provided on both sides of the fixed position of the connecting rod in parallel with the longitudinal direction of the beam. In this case, P-type and N-type semiconductor strain gauges are provided on both sides.
この発明は、第１に、半導体ひずみゲージが圧縮側での
機械的強度が引張側に比して著しく強い点に着目し、起
わいビームの圧縮ひずみ側にのみ、半導体ひずみゲージ
を取り付けているので、過負荷特性が従来に比して５倍
以上に強くされた荷重計を実現することができる。In the first aspect of the present invention, attention is paid to the fact that the semiconductor strain gauge has a significantly higher mechanical strength on the compression side than on the tension side, and the semiconductor strain gauge is attached only to the compression strain side of the bending beam. Therefore, it is possible to realize a load cell having an overload characteristic that is five times stronger than that of the conventional load cell.
第２に、この発明では、半導体ひずみゲージを起わいビ
ームの中央部に取り付けることにより、起わいビームの
長さを短くでき、従って、荷重計の小型化を図ることが
できる。これと共に、半導体ひずみゲージの中央部と最
大ひずみの位置とが略一致し、それによって、半導体ひ
ずみゲージの端部の破断を防止でき、過負荷特性の向上
を図ることができる。この点について、第６図を参照し
て説明する。Secondly, according to the present invention, the semiconductor strain gauge is attached to the central portion of the waving beam, so that the length of the waving beam can be shortened, and hence the load cell can be downsized. At the same time, the center portion of the semiconductor strain gauge and the position of the maximum strain substantially coincide with each other, whereby breakage of the end portion of the semiconductor strain gauge can be prevented and the overload characteristic can be improved. This point will be described with reference to FIG.
第６図Ａに示すように、この発明は、その長手方向が連
結棒４の固定位置を挟んで向かい合うように、一対の半
導体ひずみゲージ６、７が起わいビーム５の圧縮側の面
上に設けられている。第６図Ｂに示すように、連結棒４
によって起わいビーム５に荷重Ｗが加えられると、半導
体ひずみゲージ６、７の中心線位置における長手方向の
ひずみ分布は、第６図Ｃにおいて10で示すものとなる。
すなわち、ひずみゲージ６、７の中央部でもって、ひず
みの最大値を受け、その両端（ｃ点）がひずみの最小値
の位置に一致する。As shown in FIG. 6A, according to the present invention, a pair of semiconductor strain gauges 6 and 7 are provided on the compression-side surface of the beam 5 so that their longitudinal directions face each other with the fixed position of the connecting rod 4 interposed therebetween. It is provided. As shown in FIG. 6B, the connecting rod 4
When a load W is applied to the flexible beam 5, the longitudinal strain distribution at the center line positions of the semiconductor strain gauges 6 and 7 becomes as shown by 10 in FIG. 6C.
That is, the strain gauges 6 and 7 receive the maximum strain at their center portions, and both ends (points c) of the strain gauges 6 and 7 coincide with the minimum strain position.
このように、ひずみ分布の最大値をゲージ中央部で受け
るので、ゲージ両端部の破断を防止できる。すなわち、
半導体ひずみゲージのリード線接合部となる両端部は、
ひずみの最小値の位置となり、ひずみによる応力の集中
がなく、過負荷特性の向上を図ることができる。In this way, the maximum value of the strain distribution is received at the center of the gauge, so that breakage at both ends of the gauge can be prevented. That is,
Both ends, which are the lead wire joints of the semiconductor strain gauge,
The position is at the minimum value of strain, stress concentration due to strain does not occur, and overload characteristics can be improved.
第１図はこの発明の一実施例の縦断面図、第２図はこの
発明の一実施例の平面図、第３図は従来の荷重計の縦断
面図、第４図は従来の荷重計の平面図、第５図は従来の
荷重計の問題点の説明に用いる略線図、第６図はこの発
明の効果の説明に用いる略線図である。 図面における主要な符号の説明 1:受圧板、4:連結棒、5:起わいビーム、6,7:半導体ひず
みゲージ。1 is a vertical sectional view of an embodiment of the present invention, FIG. 2 is a plan view of an embodiment of the present invention, FIG. 3 is a vertical sectional view of a conventional load cell, and FIG. 4 is a conventional load cell. FIG. 5 is a schematic diagram used for explaining the problems of the conventional load cell, and FIG. 6 is a schematic diagram used for explaining the effect of the present invention. Description of main symbols in the drawings 1: Pressure plate, 4: Connecting rod, 5: Flexible beam, 6, 7: Semiconductor strain gauge.
フロントページの続き (56)参考文献 実開 昭60−39945（ＪＰ，Ｕ) 実開 昭49−65272（ＪＰ，Ｕ) 特公 昭51−1147（ＪＰ，Ｂ１) 実公 昭50−15505（ＪＰ，Ｙ１) 特公 昭52−49338（ＪＰ，Ｂ２)Continuation of the front page (56) Bibliography Sho 60-39945 (JP, U) Steady Sho 49-65272 (JP, U) Japanese Patent Sho 51-1147 (JP, B1) Real Sho 50-15505 (JP , Y1) JP-B-52-49338 (JP, B2)
Claims (1)
力が上記連結棒を介して伝達され、両端が固定された矩
形板状の起わいビームと、 上記起わいビームの圧縮ひずみ側の面上であって、上記
連結棒の固定位置の両側の位置に、その長手方向が上記
起わいビームの長手方向と同方向に延長し、且つその長
手方向が向かい合うように取り付けられた半導体ひずみ
ゲージと を備えたことを特徴とする荷重計。1. A pressure receiving plate, a connecting rod fixed to a central position of the pressure receiving plate, a force received by the pressure receiving plate is transmitted through the connecting rod, and a rectangular plate-shaped flexible beam having both ends fixed, On the surface of the flexible beam on the side of compressive strain, on both sides of the fixed position of the connecting rod, the longitudinal direction extends in the same direction as the longitudinal direction of the flexible beam, and the longitudinal directions face each other. And a semiconductor strain gauge attached as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7492985A JPH06100512B2 (en) | 1985-04-09 | 1985-04-09 | load cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7492985A JPH06100512B2 (en) | 1985-04-09 | 1985-04-09 | load cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61233336A JPS61233336A (en) | 1986-10-17 |
| JPH06100512B2 true JPH06100512B2 (en) | 1994-12-12 |
Family
ID=13561534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7492985A Expired - Lifetime JPH06100512B2 (en) | 1985-04-09 | 1985-04-09 | load cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06100512B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017212866A1 (en) * | 2016-06-08 | 2017-12-14 | 日立オートモティブシステムズ株式会社 | Force sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025229509A1 (en) * | 2024-05-02 | 2025-11-06 | Politecnico Di Torino | Load-cell device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5249338B2 (en) | 2008-09-26 | 2013-07-31 | プリズム インク | Scanning optical device |
-
1985
- 1985-04-09 JP JP7492985A patent/JPH06100512B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5249338B2 (en) | 2008-09-26 | 2013-07-31 | プリズム インク | Scanning optical device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017212866A1 (en) * | 2016-06-08 | 2017-12-14 | 日立オートモティブシステムズ株式会社 | Force sensor |
| JPWO2017212866A1 (en) * | 2016-06-08 | 2019-02-14 | 日立オートモティブシステムズ株式会社 | Force sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61233336A (en) | 1986-10-17 |
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