JPH06101428B2 - Method of forming thin film - Google Patents
Method of forming thin filmInfo
- Publication number
- JPH06101428B2 JPH06101428B2 JP59055452A JP5545284A JPH06101428B2 JP H06101428 B2 JPH06101428 B2 JP H06101428B2 JP 59055452 A JP59055452 A JP 59055452A JP 5545284 A JP5545284 A JP 5545284A JP H06101428 B2 JPH06101428 B2 JP H06101428B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- semiconductor laser
- face
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は高周波スパッタ装置を用いた薄膜の形成方法に
関する。The present invention relates to a method for forming a thin film using a high frequency sputtering apparatus.
（ロ） 従来技術 現在半導体レーザの長寿命化を図るためその端面をAl2O
3（酸化アルミニウム）、SiO2（二酸化シリコン）等の
絶縁膜にてコーティングすることが一般に行われている
（IEEE JOURNAL OF QUANTUM ELECTRONICS,VOL.QE−
16.NO.3,MARCH 1980,p248〜p250）。(B) Conventional technology In order to extend the life of semiconductor lasers, the end face of the laser is Al 2 O.
Generally, coating with an insulating film such as 3 (aluminum oxide) or SiO 2 (silicon dioxide) is performed (IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL.QE-
16.NO.3, MARCH 1980, p248-p250).
上記絶縁膜の形成方法としては電子ビーム蒸着法、プラ
ズマCVD法、スパッタ法等が用いられてきた。しかし従
来のこの種方法により形成された絶縁膜と基板との界面
に発生する界面準位密度が１×1012/cm2.eV以下となっ
たという報告はなかった。As a method of forming the insulating film, an electron beam vapor deposition method, a plasma CVD method, a sputtering method and the like have been used. However, there has been no report that the interface state density generated at the interface between the insulating film formed by this type of conventional method and the substrate is 1 × 10 12 / cm 2 .eV or less.
（ハ） 発明の目的 本発明は斯る点に鑑みてなされたもので、薄膜形成後の
界面準位密度が１×1012/cm2・eV（cm-2・eV-1）以下と
なる薄膜の形成方法を提供せんとするものである。(C) Object of the invention The present invention has been made in view of the above point, and the interface state density after thin film formation is 1 × 10 12 / cm 2 · eV (cm −2 · eV −1 ) or less. An object of the present invention is to provide a method for forming a thin film.
（ニ） 発明の構成 本発明者は一般的に周知の高周波スパッタ装置（例えば
特願昭57−123825号に記載された高周波スパッタ装置）
を用いて種々の条件下で基板上に薄膜を形成した。以下
に斯る薄膜形成実験の実験方法及びその結果を示す。(D) Structure of the Invention The present inventor has generally known a high-frequency sputtering apparatus (for example, the high-frequency sputtering apparatus described in Japanese Patent Application No. 57-123825).
Was used to form a thin film on a substrate under various conditions. The experimental method and results of such a thin film formation experiment are shown below.
＜実験Ｉ＞ まず、１×10-6Torr以下に排気され、かつその雰囲気温
度が200℃〜300℃の高周波スパッタ装置内において、30
分以上熱処理を施されたｎ型GaAs単結晶基板を準備し、
斯る基板上にAl2O3からなる絶縁膜を形成した。この膜
形成時の高周波スパッタ装置内は10-2〜10-1TorrのAr雰
囲気とし、上記基板の温度を変化させたところ、第１図
に示す如く基板温度に対応して基板と絶縁膜との界面に
発生する界面準位密度が変化することがわかる。<Experiment I> First, in a high-frequency sputtering apparatus that was evacuated to 1 × 10 −6 Torr or less and the ambient temperature was 200 ° C. to 300 ° C., 30
Prepare an n-type GaAs single crystal substrate that has been heat treated for more than
An insulating film made of Al 2 O 3 was formed on such a substrate. At the time of forming this film, the inside of the high frequency sputtering apparatus was set to an Ar atmosphere of 10 -2 to 10 -1 Torr, and the temperature of the substrate was changed. As shown in FIG. It can be seen that the interface state density generated at the interface of changes.
第１図より明らかな如く、基板温度が100℃〜160℃の間
で界面準位密度が1012/cm2・eV以下となる。これは100
℃以上に基板温度を設定すると、基板表面に付着した不
純物がスムーズに除去できるためであり、また基板温度
が160℃以上では飛来してくるAl2O3中のO--と上記基板
とが反応し界面準位が高くなるためであると考えられ
る。As is clear from FIG. 1, the interface state density becomes 10 12 / cm 2 · eV or less when the substrate temperature is between 100 ° C and 160 ° C. This is 100
If the substrate temperature is set to more than ° C., is because impurities adhering to the substrate surface can be removed smoothly and O in Al 2 O 3 substrate temperature come flying at 160 ° C. or higher - and the and the substrate It is considered that this is because the reaction occurs and the interface state becomes higher.
＜実験II＞ まず、１×10-6Torr以下に排気され、かつその雰囲気温
度が200℃〜300℃の高周波スパッタ装置内において、30
分以上熱処理が施されたｎ型GaAs単結晶基板を準備し、
斯る基板上にAl2O3からなる絶縁膜を形成した。この膜
形成時の基板温度を100℃〜160℃に保持し、高周波スパ
ッタ装置内のAr雰囲気の圧力を変化させたところ、第２
図に示す如く装置内圧力が上昇するにしたがって界面準
位密度が低下することが判明した。<Experiment II> First, in a high-frequency sputtering apparatus in which the exhaust gas was exhausted to 1 × 10 −6 Torr or less and the ambient temperature was 200 to 300 ° C., 30
Prepare an n-type GaAs single crystal substrate that has been heat treated for at least
An insulating film made of Al 2 O 3 was formed on such a substrate. The substrate temperature during film formation was maintained at 100 ° C to 160 ° C, and the pressure of the Ar atmosphere in the high frequency sputtering apparatus was changed.
As shown in the figure, it was found that the interface state density decreased as the pressure inside the apparatus increased.
第２図より明らかな如く、装置内圧力が３×10-2Torr以
上では界面準位密度は1012/cm2・eV以下となる。これは
装置内圧力の上昇と共に基板に飛来するArイオンの運動
エネルギーが減少し基板表面に生じるダメージが減少す
るためであると考えられる。As is clear from FIG. 2 , the interface state density is 10 12 / cm 2 · eV or less when the pressure inside the apparatus is 3 × 10 -2 Torr or more. It is considered that this is because the kinetic energy of Ar ions flying to the substrate decreases as the pressure inside the apparatus increases, and the damage generated on the substrate surface decreases.
尚、上記実験では基板をGaAsとし、また薄膜材料としAl
2O3を用いたが、基板としては他にGaAlAs、GaP、InP等
を用い、薄膜材料としてはSiO2、Si3N4等を用い任意に
組合せても同様な結果が得られることも実験により確認
されている。In the above experiment, the substrate was GaAs and the thin film material was Al.
2 O 3 was used, but GaAlAs, GaP, InP, etc. were used as the substrate, and SiO 2 , Si 3 N 4 etc. were used as the thin film material, and similar results could be obtained by an arbitrary combination. Have been confirmed by.
本発明は斯る知見に鑑みてなされたもので、その特徴
は、高周波スパッタ装置を用いて半導体レーザの端面上
に絶縁性薄膜を形成する薄膜の形成方法において、上記
絶縁性薄膜と上記端面との界面での界面準位密度を１×
1012/cm2・eV以下とするように、上記半導体レーザの温
度を100〜160℃、上記装置内圧力を約３×10-2Torr以上
として上記絶縁性薄膜を形成することにある。The present invention has been made in view of such findings, and its feature is a method of forming a thin film on an end face of a semiconductor laser using a high-frequency sputtering device, wherein the insulating thin film and the end face are The interface state density at the interface of 1 ×
The insulating thin film is formed by setting the temperature of the semiconductor laser at 100 to 160 ° C. and the internal pressure of the device at about 3 × 10 −2 Torr or more so as to be 10 12 / cm 2 · eV or less.
（ホ） 実施例 本発明の実施例として、第３図に示すCSP型半導体レー
ザの端面に本発明を用いてAl2O3膜をコーティングし
た。(E) Example As an example of the present invention, the end surface of the CSP type semiconductor laser shown in FIG. 3 was coated with an Al 2 O 3 film by using the present invention.
第３図中、（１）はSi（シリコン）がドーブされキャリ
ア濃度が１〜２×1018/cm3のｎ型GaAs（ガリウム砒素）
基板であり、該基板の一主面上には幅６μｍ、深さ1.5
μｍで紙面垂直方向に延在する溝が形成されている。
（２）は上記基板（１）の主面上に積層された第１クラ
ッド層であり、該クラッド層はTe（テルル）がドープさ
れたキャリア濃度が１〜３×1018/cm3のｎ型Ga0.5Al0.5
As（ガリウムアルミ砒素）からなり、又その表面形状が
凹状となるように上記溝上部での層厚を１〜1.5μｍ、
その他の部分（以下平坦部と称す）での層厚を0.1〜0.3
μｍとした。（３）は上記第１クラッド層（２）上に積
層された活性層であり、該活性層はノンドープでキャリ
ア濃度が1015〜1016/cm3のGa0.85Al0.15Asからなり、そ
の層厚は約0.1μｍである。（４）は上記活性層（３）
上に積層された第２クラッド層であり、該クラッド層は
Ge（ゲルマニウム）がドープされたキャリア濃度５×10
17〜３×1018/cm3のｐ型Ga0.5Al0.5Asからなり、その層
厚は表面形状が平坦となるように溝上部が約1.5μｍ、
平坦部で約1.2μｍとなっている。（５）は上記溝直上
の第１クラッド層（４）上に積層されたキャップ層であ
り、該キャップ層はGeがドープされたキャリア濃度が５
×1018〜５×1019/cm3のｐ型GaAsからなり、その層厚は
0.5〜1.5μｍである。（６）は上記キャップ層（５）の
両側の第２クラッド層（４）上に形成された埋込層であ
り、該埋込層は例えばノンドープZnSe（ジンクセレン）
等の高抵抗材料からなる。In FIG. 3, (1) is n-type GaAs (gallium arsenide) having a carrier concentration of 1 to 2 × 10 18 / cm 3 doped with Si (silicon).
A substrate, with a width of 6 μm and a depth of 1.5 on one main surface of the substrate.
A groove extending in the direction perpendicular to the paper surface of μm is formed.
(2) is a first clad layer laminated on the main surface of the substrate (1), and the clad layer is doped with Te (tellurium) and has a carrier concentration of 1 to 3 × 10 18 / cm 3 Type Ga0.5Al0.5
It is made of As (gallium aluminum arsenide) and has a layer thickness of 1 to 1.5 μm at the upper part of the groove so that its surface shape is concave.
The layer thickness in other parts (hereinafter referred to as flat parts) is 0.1 to 0.3
μm. (3) is an active layer laminated on the first cladding layer (2), which is made of Ga0.85Al0.15As with a non-doped carrier concentration of 10 15 -10 16 / cm 3 The thickness is about 0.1 μm. (4) is the active layer (3)
A second clad layer laminated on the clad layer, the clad layer being
Ge (germanium) -doped carrier concentration 5 × 10
It consists of 17-3 × 10 18 / cm 3 p-type Ga0.5Al0.5As, and its layer thickness is about 1.5 μm at the top of the groove so that the surface shape is flat,
It is about 1.2 μm in the flat part. (5) is a cap layer laminated on the first cladding layer (4) directly above the groove, and the cap layer has a Ge-doped carrier concentration of 5
It is made of p-type GaAs of × 10 18 to 5 × 10 19 / cm 3 , and its layer thickness is
It is 0.5 to 1.5 μm. (6) is a buried layer formed on the second cladding layer (4) on both sides of the cap layer (5), and the buried layer is, for example, non-doped ZnSe (zinc selenium).
It is made of high resistance material such as.
斯る半導体レーザを、まず装置内圧力１×10-6Torr以
下、雰囲気温度200℃〜300℃の装置内において30分〜１
時間程度熱処理した後、装置内圧力が10-1Torr程度でか
つAr雰囲気の高周波スパッタ装置内に上記半導体レーザ
を150℃程度の温度に保持し、高周波スパッタリング法
により上記半導体レーザの端面に2400〜2500Å厚のAl2O
3膜を形成したところ、その端面に発生した界面準位の
密度は1012/cm2・eV以下となった。また斯る半導体レー
ザを80℃の高温雰囲気中で連続発振実験を行なったとき
の実験結果を第４図中白丸で示す。尚、このときの発振
出力は5mWであった。First of all, such a semiconductor laser is placed in an apparatus having an internal pressure of 1 × 10 −6 Torr or less and an atmospheric temperature of 200 ° C. to 300 ° C. for 30 minutes to 1 minute.
After the heat treatment for about an hour, the semiconductor laser is held at a temperature of about 150 ° C. in a high frequency sputtering apparatus with an internal pressure of about 10 -1 Torr and an Ar atmosphere, and 2400 ~ 2500Å thick Al 2 O
When three films were formed, the density of interface states generated on the end face was 10 12 / cm 2 · eV or less. Further, the experimental results when such a semiconductor laser was subjected to a continuous oscillation experiment in a high temperature atmosphere of 80 ° C. are shown by white circles in FIG. The oscillation output at this time was 5 mW.
第４図から明らかなように、本実施例半導体レーザでは
3000時間以上の連続発振時にも一定の印加電流で一定の
出力値が得られることが判る。As is clear from FIG. 4, in the semiconductor laser of this embodiment,
It can be seen that a constant output value can be obtained with a constant applied current even during continuous oscillation for 3000 hours or more.
また、図中黒丸は第３図に示した半導体レーザにおいて
端面にコーティングする際、端面に発生した界面準位の
密度が1012/cm2・eVより大となった際の発振特性を示す
もので、本実施例に較べて劣化しやすいことがわかる。The black circles in the figure show the oscillation characteristics when the density of the interface state generated on the end face of the semiconductor laser shown in FIG. 3 is greater than 10 12 / cm 2 · eV when the end face is coated. It can be seen that, as compared with the present embodiment, deterioration is likely to occur.
（ヘ） 発明の効果 本発明は、高周波スパッタ装置を用いて半導体レーザの
端面上に絶縁性薄膜を形成する薄膜の形成方法におい
て、上記絶縁性薄膜と上記端面との界面での界面準位密
度を１×1012/cm2・eV以下とするように、上記半導体レ
ーザの温度を100〜160℃、上記装置内圧力を約３×10-2
Torr以上として上記絶縁性薄膜を形成するので、斯る方
法で絶縁性薄膜が端面上に形成された半導体レーザは劣
化が抑制され、長時間一定出力で連続発振が可能とな
る。(F) Effect of the Invention The present invention provides a thin film forming method for forming an insulating thin film on an end face of a semiconductor laser by using a high-frequency sputtering apparatus, wherein an interface state density at an interface between the insulating thin film and the end face is formed. Of 1 × 10 12 / cm 2 · eV or less, the temperature of the semiconductor laser is 100 to 160 ° C., and the internal pressure of the device is about 3 × 10 -2.
Since the above-mentioned insulating thin film is formed with a Torr or more, deterioration of the semiconductor laser having the insulating thin film formed on the end face by such a method is suppressed, and continuous oscillation with a constant output is possible for a long time.
【図面の簡単な説明】 第１図、第２図は本発明者が行なった実験結果を示すグ
ラフ、第３図、第４図は本発明の実施例を示し、第３図
は断面図、第４図は特性図である。BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 and 2 are graphs showing the results of experiments conducted by the present inventor, FIGS. 3 and 4 are examples of the present invention, and FIG. 3 is a sectional view. FIG. 4 is a characteristic diagram.
Claims (1)
の端面上に絶縁性薄膜を形成する薄膜の形成方法におい
て、上記絶縁性薄膜と上記端面との界面での界面準位密
度を１×1012/cm2・eV以下とするように、上記半導体レ
ーザの温度を100〜160℃、上記装置内圧力を約３×10-2
Torr以上として上記絶縁性薄膜を形成することを特徴と
する薄膜の形成方法。1. A thin film forming method for forming an insulating thin film on an end face of a semiconductor laser by using a high frequency sputtering apparatus, wherein an interface state density at an interface between the insulating thin film and the end face is 1 × 10 12 / cm 2 · eV or less, the temperature of the semiconductor laser is 100 to 160 ℃, the pressure in the device is about 3 × 10 -2
A method of forming a thin film, characterized in that the above-mentioned insulating thin film is formed at Torr or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59055452A JPH06101428B2 (en) | 1984-03-22 | 1984-03-22 | Method of forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59055452A JPH06101428B2 (en) | 1984-03-22 | 1984-03-22 | Method of forming thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60198730A JPS60198730A (en) | 1985-10-08 |
| JPH06101428B2 true JPH06101428B2 (en) | 1994-12-12 |
Family
ID=12998991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59055452A Expired - Fee Related JPH06101428B2 (en) | 1984-03-22 | 1984-03-22 | Method of forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06101428B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5729577A (en) * | 1980-07-30 | 1982-02-17 | Anelva Corp | Automatic continuous sputtering apparatus |
| JPS57104224A (en) * | 1980-12-22 | 1982-06-29 | Hitachi Ltd | Forming method of insulating thin film |
-
1984
- 1984-03-22 JP JP59055452A patent/JPH06101428B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60198730A (en) | 1985-10-08 |
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