JPH06101487B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH06101487B2 JPH06101487B2 JP59245747A JP24574784A JPH06101487B2 JP H06101487 B2 JPH06101487 B2 JP H06101487B2 JP 59245747 A JP59245747 A JP 59245747A JP 24574784 A JP24574784 A JP 24574784A JP H06101487 B2 JPH06101487 B2 JP H06101487B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- resin
- semiconductor device
- lead frame
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07521—Aligning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造方法に関する。特に、耐水
性が高く信頼性が高い樹脂封止型半導体装置の製造方法
の改良に関する。The present invention relates to a method for manufacturing a semiconductor device. In particular, it relates to an improvement in a method for manufacturing a resin-sealed semiconductor device having high water resistance and high reliability.
半導体装置のパッケージは、気密封止型パッケージと樹
脂封止型パッケージとに分類される。樹脂封止型パッケ
ージは製造コストが安いという大きな利点があるが、信
頼性に欠けるという欠点がある。特に、耐水性が劣ると
いう欠点がある。Semiconductor device packages are classified into hermetically sealed packages and resin-sealed packages. The resin-sealed package has a great advantage that the manufacturing cost is low, but has a drawback that it lacks reliability. In particular, it has the drawback of poor water resistance.
従来、樹脂封止型パッケージに半導体素子を封入するに
あたっては、リードフレームに半導体素子を接着（ダイ
ス付け）した後、銀ペーストをキュアーするため150℃
程度の温度において２〜３時間程度熱処理を施し、その
後、250℃程度に加熱されたボンディングブロック上に
乗せられたリード上において、ボンディングツールをも
ってボンディングワイヤを加熱圧着してワイヤボンディ
ングをなし、その後、注型法、移送成形法等の手法を使
用して樹脂封止をなしている。Conventionally, when encapsulating a semiconductor element in a resin-encapsulated package, after bonding the semiconductor element to the lead frame (die attachment), it is necessary to cure the silver paste at 150 ° C.
Heat treatment is performed at a temperature of about 2 to 3 hours, and then, on the lead placed on the bonding block heated to about 250 ° C., the bonding wire is heated and pressure-bonded with a bonding tool to form wire bonding. Resin molding is performed using methods such as the casting method and transfer molding method.
ところが、銅等をもって成形されるリードの表面が、上
記の熱処理期間に、酸化される傾向があり、この酸化膜
とエポキシ樹脂等のパッケージ用樹脂との密着性が必ず
しも良好ではないため、リードとパッケージ用樹脂との
間に間隙が発生しやすく、この間隙を経由して水分が侵
入しやすく、信頼性を害しやすいという欠点がある。However, the surface of the lead molded with copper or the like tends to be oxidized during the above heat treatment period, and the adhesion between this oxide film and the packaging resin such as epoxy resin is not always good, so There is a drawback in that a gap is likely to be formed between the resin for packaging and the moisture is likely to enter through the gap, which tends to impair reliability.
本発明の目的は、これらの欠点を解消することにあり、
耐水性が高く信頼性が高い樹脂封止型半導体装置の製造
方法を提供することにある。The purpose of the present invention is to eliminate these drawbacks,
An object of the present invention is to provide a method for manufacturing a resin-sealed semiconductor device having high water resistance and high reliability.
本発明によれば、リードフレームのインナーリード及び
ステージ支持棒の全表面に高分子化合物被膜を被覆し、
前記インナーリードのボンディング領域にレーザビーム
を照射して該領域の前記高分子化合物被膜を除去後、前
記ボンディング領域と前記リードフレームのステージに
搭載された半導体素子のボンディングパッドとをワイヤ
ボンディングし、その後、前記インナーリードと前記ス
テージと前記ステージ支持棒と前記半導体素子とを樹脂
封止することを特徴とする半導体装置の製造方法により
上記目的が達成される。According to the present invention, the entire surface of the inner lead of the lead frame and the stage support rod is coated with a polymer compound film,
After irradiating the bonding area of the inner lead with a laser beam to remove the polymer compound film in the area, wire bonding is performed between the bonding area and the bonding pad of the semiconductor element mounted on the stage of the lead frame. The above object is achieved by a method of manufacturing a semiconductor device, which is characterized in that the inner lead, the stage, the stage support rod, and the semiconductor element are resin-sealed.
上記の欠点は、銀ペーストをもってなすダイス付け工程
に必須の熱処理に起因するものであり、この熱処理の副
作用としてリードが酸化され、この酸化物とパッケージ
用樹脂との密着不良性によって発生するものであるか
ら、上記の銀ペーストキュアー温度に耐え、しかも、パ
ッケージ用樹脂との密着性のすぐれている物質をリード
フレームにコートしておけば、上記の欠点を解消しうる
との着想にもとづき、各種の高分子化合物をリードフレ
ームの全表面にスプレーコートして被膜を形成し、150
℃程度２〜３時間加熱した後、その上にエポキシ樹脂等
をコートしてその密着性・耐水性を試験したところ、ポ
リウレタン、ポリブダディエン、ボリイミド等、スプレ
ーコートが容易であり、150℃程度の温度には耐えるこ
とができエポキシ樹脂等パッケージ用樹脂との密着性が
すぐれている樹脂を使用すれば、上記の目的を達成しう
ることを確認した。The above-mentioned drawbacks are caused by the heat treatment that is essential for the dicing process with silver paste, and as a side effect of this heat treatment, the leads are oxidized and are caused by poor adhesion between the oxide and the packaging resin. Therefore, based on the idea that the above drawbacks can be eliminated by coating the lead frame with a substance that withstands the above-mentioned silver paste cure temperature and has excellent adhesion to the packaging resin, Spray coating the entire surface of the lead frame with a polymer compound of
After heating at about ℃ for 2 to 3 hours, the epoxy resin etc. was coated on it and tested for its adhesion and water resistance. It has been confirmed that the above object can be achieved by using a resin that can withstand the above and has excellent adhesion to the packaging resin such as an epoxy resin.
たゞ、これらの樹脂は絶縁物であるから、ワイヤボンデ
ィングに先立ち、ワイヤボンディング領域から除去して
おくことが必須であるが、ボンディング領域は直径100
μｍ程度の極めて限定された領域であるので、必ずしも
容易ではない。各種の手法を比較実験した結果、レーザ
ビームを照射して高分子化合物コート膜を燃焼除去する
ことが最も容易確実であることが確認された。Since these resins are insulators, it is essential to remove them from the wire bonding area before wire bonding.
Since it is a very limited region of about μm, it is not always easy. As a result of comparative experiments of various methods, it was confirmed that it is easiest and surely to irradiate a laser beam to burn off the polymer compound coating film.
なお、ポリウレタン、ポリブダディエン、ポリイミド等
は耐熱性が必ずしも良好ではないから、ワイヤボンディ
ングにあたり、ボンディングブロック全体の温度を250
℃に上昇することは必ずしも好ましくない、むしろ、ボ
ンディングパッドに対応する領域のみ（半導体素子が接
着される領域のみ）を250℃程度とし、その他の領域は1
00℃程度とすることが好ましい。このことは、半導体装
置の熱履歴をマイルドにする附随的効果も発生する。Since heat resistance of polyurethane, polybutadiene, polyimide, etc. is not always good, the temperature of the entire bonding block should be 250 at the time of wire bonding.
It is not always desirable to raise the temperature to ℃, rather, only the area corresponding to the bonding pad (only the area where the semiconductor element is bonded) is set to about 250 ℃, and the other areas are set to 1
It is preferable to set the temperature to about 00 ° C. This also has the attendant effect of making the thermal history of the semiconductor device mild.
以下、図面を参照しつゝ、本発明の一実施例に係る半導
体装置の製造方法をさらに説明する。Hereinafter, a method for manufacturing a semiconductor device according to an embodiment of the present invention will be further described with reference to the drawings.
第１図は本発明の一実施例に係るリードフレームとそれ
に半導体素子が搭載された状態を示す平面図である。図
において、１はリードフレーム、２は半導体素子、10は
インナーリード、11はステージ、12はステージ支持棒で
ある。FIG. 1 is a plan view showing a lead frame according to an embodiment of the present invention and a state in which a semiconductor element is mounted on the lead frame. In the figure, 1 is a lead frame, 2 is a semiconductor element, 10 is an inner lead, 11 is a stage, and 12 is a stage support rod.
第１図参照 リードフレーム１の全面に、ポリウレタン、ポリブダデ
ィエン、ポリイミド等の樹脂をスプレーコートして、リ
ードフレーム１の全表面にこれら樹脂の被膜を被覆す
る。このとき、ステージの半導体素子を搭載する領域は
マスクしておき、樹脂が被覆されないようにする。銀ペ
ースト等を使用して、半導体素子２をリードフレーム１
に接着し、150℃２〜３時間熱処理して銀ペーストをキ
ュアーする。上記の樹脂はこの程度の温度には耐えるの
で、上記の被膜は破壊されない。See FIG. 1. A resin such as polyurethane, polybutadiene, and polyimide is spray-coated on the entire surface of the lead frame 1, and the entire surface of the lead frame 1 is coated with a coating of these resins. At this time, the region of the stage on which the semiconductor element is mounted is masked so that the resin is not covered. The semiconductor element 2 is connected to the lead frame 1 using silver paste or the like.
And heat treatment at 150 ° C. for 2 to 3 hours to cure the silver paste. Since the above-mentioned resin can withstand such a temperature, the above-mentioned coating is not destroyed.
インナーリード10のボンディング領域（直径100μｍ程
度の極めて限定された領域）にレーザービームを照射し
て、この領域から上記の高分子化合物コート膜を除去す
る。The bonding region of the inner lead 10 (a very limited region having a diameter of about 100 μm) is irradiated with a laser beam to remove the polymer compound coating film from this region.
第２図参照 次にリードフレーム１を100℃程度に加熱されているボ
ンディングブロック３上に載置し、ボンディング領域を
HotN2ガスを吹きつけることにより選択的に250℃程度に
加熱しながら、ボンディングツール４により半導体素子
２の各ボンディングパッドとインナーリード10のボンデ
ィング領域とをワイヤ５で接続する。Refer to FIG. 2. Next, the lead frame 1 is placed on the bonding block 3 which is heated to about 100 ° C.
While selectively heating to about 250 ° C. by blowing HotN 2 gas, each bonding pad of the semiconductor element 2 and the bonding region of the inner lead 10 are connected by the wire 5 by the bonding tool 4.
第３図参照 注型法、移送成形法等を使用して、エポキシ樹脂等の耐
熱・耐水性のある樹脂をもって封止する。図において５
はボンディングワイヤであり、６は封止用樹脂である。See Fig. 3 Use the casting method, transfer molding method, etc. to seal with heat-resistant and water-resistant resin such as epoxy resin. 5 in the figure
Is a bonding wire, and 6 is a sealing resin.
以上の工程をもって製造した半導体装置にあっては、リ
ードフレーム１と封止用樹脂６との密着性が良好である
から、耐水性が高く信頼性が高い。また、ワイヤボンデ
ィングに際してボンディング領域以外のボンディングブ
ロックの温度をあまり高くしないことが望ましいので、
熱履歴をマイルドにするという副次的利益も加わり、信
頼性がさらに向上する。In the semiconductor device manufactured through the above steps, the adhesion between the lead frame 1 and the sealing resin 6 is good, and therefore the water resistance is high and the reliability is high. Also, it is desirable not to raise the temperature of the bonding block other than the bonding area so much during wire bonding.
The secondary benefit of milder thermal history is added, further improving reliability.
以上説明せるとおり、本発明によれば耐水性が高く信頼
性が高い樹脂封止型半導体装置の製造方法を提供するこ
とができる。As described above, according to the present invention, it is possible to provide a method for manufacturing a resin-sealed semiconductor device having high water resistance and high reliability.
第１〜３図は本発明の実施例に係る半導体装置の製造方
法を説明する説明図である。 １……リードフレーム、２……半導体素子、３……ボン
ディングブッロク、４……ボンディングツール、５……
ボンディングワイヤ、６……封止用樹脂。1 to 3 are explanatory views illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention. 1 ... Lead frame, 2 ... Semiconductor element, 3 ... Bonding block, 4 ... Bonding tool, 5 ...
Bonding wire, 6 ... Sealing resin.
Claims (1)
ージ支持棒の全表面に高分子化合物被膜を被覆し、前記
インナーリードのボンディング領域にレーザビームを照
射して該領域の前記高分子化合物被膜を除去した後、前
記ボンディング領域と前記リードフレームのステージに
搭載された半導体素子のボンディングパッドとをワイヤ
ボンディングし、その後、前記インナーリードと前記ス
テージと前記ステージ支持棒と前記半導体素子とを樹脂
封止することを特徴とする半導体装置の製造方法。1. An inner lead of a lead frame and the entire surface of a stage support rod are covered with a polymer compound film, and a bonding region of the inner lead is irradiated with a laser beam to remove the polymer compound film in the region. After that, wire bonding is performed between the bonding area and the bonding pad of the semiconductor element mounted on the stage of the lead frame, and then the inner lead, the stage, the stage support rod, and the semiconductor element are resin-sealed. A method for manufacturing a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59245747A JPH06101487B2 (en) | 1984-11-20 | 1984-11-20 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59245747A JPH06101487B2 (en) | 1984-11-20 | 1984-11-20 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61124142A JPS61124142A (en) | 1986-06-11 |
| JPH06101487B2 true JPH06101487B2 (en) | 1994-12-12 |
Family
ID=17138192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59245747A Expired - Lifetime JPH06101487B2 (en) | 1984-11-20 | 1984-11-20 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06101487B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5010476A (en) * | 1973-05-31 | 1975-02-03 |
-
1984
- 1984-11-20 JP JP59245747A patent/JPH06101487B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61124142A (en) | 1986-06-11 |
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