JPH0610344B2 - Metal thin film manufacturing method - Google Patents
Metal thin film manufacturing methodInfo
- Publication number
- JPH0610344B2 JPH0610344B2 JP10639788A JP10639788A JPH0610344B2 JP H0610344 B2 JPH0610344 B2 JP H0610344B2 JP 10639788 A JP10639788 A JP 10639788A JP 10639788 A JP10639788 A JP 10639788A JP H0610344 B2 JPH0610344 B2 JP H0610344B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- crucible
- vapor pressure
- thin film
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 22
- 239000002184 metal Substances 0.000 title claims description 22
- 239000010409 thin film Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 30
- 239000010408 film Substances 0.000 claims description 25
- 238000010894 electron beam technology Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 description 13
- 230000008020 evaporation Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 229920006254 polymer film Polymers 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000000181 anti-adherent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、真空蒸着によって金属薄膜を安定に形成する
ための製造法に関するものであり、特に金属薄膜表面に
おける異物と金属薄膜の組成が、その機能に重要な影響
を及ぼす例えば高密度記録特性に優れた垂直磁気記録媒
体等の製造法に関するものである。TECHNICAL FIELD The present invention relates to a manufacturing method for stably forming a metal thin film by vacuum vapor deposition, and in particular, the composition of the foreign matter and the metal thin film on the surface of the metal thin film has a function. The present invention relates to a method of manufacturing a perpendicular magnetic recording medium having excellent high density recording characteristics.
従来の技術 一般に真空蒸着法はその高堆積速度の故に大面積，量産
用の薄膜形成法として用いられ、例えば金属薄膜形磁気
記録媒体の製造法としても適している。金属薄膜形の媒
体としてはＣｏ基磁性薄膜媒体、特にＣｏ−Ｃｒ媒体が
短波長記録特性の優れた垂直磁化型媒体として最適であ
る事がわかってろる。Ｃｏ−Ｃｒ媒体においては、媒体
膜中におけるるＣｏとＣｒのｗｔ％が約８０：２０であ
る場合にその磁気的特性が優れており、それ故蒸着法に
よって上気媒体を製膜する場合、膜中でこの濃度割合と
なる様に、蒸発るつぼ中でその組成を制御する必要があ
る。一般にＣｏおよびＣｒ金属は高融点材料であり、蒸
着の場合その溶融蒸発手段としては電子線加熱法を用い
るのが一般的であり、その例を第２図および第３図に示
す。第３図は単一るつぼの蒸発源を用いた方法であり、
あらかじめＣｏ−Ｃｒの合金、この場合Ｃｏ割合の多い
合金をるつぼ１に装填しておき、電子線２により加熱溶
融させるものである。この時、るつぼ１内の合金は、そ
の蒸気圧差が大きいために、蒸気圧の高いＣｒ成分が先
に蒸発し、膜中のＣｒ濃度が第４図に示す如くなり、例
えば初期合金割合をＣｏ９３Ｃｒとしても蒸着初期では
Ｃｒ濃度が高く、蒸着時間の経過と共に膜中のＣｒ濃度
が徐々に減少してゆく。そのため第３図においては、Ｃ
ｒ粒３を補給しながらその組成を制御するものである。2. Description of the Related Art In general, the vacuum deposition method is used as a thin film forming method for large area and mass production because of its high deposition rate, and is also suitable as a method for manufacturing a metal thin film type magnetic recording medium, for example. As the metal thin film type medium, it is understood that the Co-based magnetic thin film medium, especially the Co-Cr medium is the most suitable as the perpendicular magnetization type medium excellent in the short wavelength recording characteristic. In the Co-Cr medium, the magnetic properties are excellent when the wt% of Co and Cr in the medium film is about 80:20. Therefore, when forming the upper medium by vapor deposition, It is necessary to control the composition in the evaporation crucible so that this concentration ratio is obtained in the film. In general, Co and Cr metals are high melting point materials, and in the case of vapor deposition, an electron beam heating method is generally used as the melting and vaporizing means, and examples thereof are shown in FIGS. 2 and 3. FIG. 3 shows a method using a single crucible evaporation source,
A Co—Cr alloy, in this case an alloy with a high Co content, is loaded in the crucible 1 and heated and melted by the electron beam 2. At this time, since the alloy in the crucible 1 has a large vapor pressure difference, the Cr component having a high vapor pressure evaporates first, and the Cr concentration in the film becomes as shown in FIG. 4. For example, the initial alloy ratio is Co93Cr. However, the Cr concentration is high in the initial stage of vapor deposition, and the Cr concentration in the film gradually decreases as the vapor deposition time elapses. Therefore, in FIG. 3, C
The composition is controlled while replenishing r grains 3.
また第３図は、ＣｏとＣｒの２元蒸着源を用いた方法で
の従来例を示した図であり、ＣｏおよびＣｒを別々のる
つぼ４，５より蒸発させ、キャン６上を走行する高分子
フィルム基板７に堆積させるものである。この時８は防
着板であり、９は巻出しローラ、１０は巻取りローラで
ある。第２図においても、第３図と同じく、防着板８，
キャン６，巻出しローラ９，巻取りローラ１０を備えて
薄膜を連続的に形成している。Further, FIG. 3 is a diagram showing a conventional example of a method using a binary vapor deposition source of Co and Cr, in which Co and Cr are vaporized from separate crucibles 4 and 5, and a high temperature running on a can 6 is run. It is deposited on the molecular film substrate 7. At this time, 8 is an anti-adhesive plate, 9 is a winding roller, and 10 is a winding roller. Also in FIG. 2, as in FIG. 3, the deposition prevention plate 8,
The can 6, the unwinding roller 9, and the winding roller 10 are provided to continuously form a thin film.
この様な真空蒸着法により製膜する場合、いずれも高分
子フィルム上に磁気記録媒体を構成し、磁気ヘッドと接
触して記録再生するため、媒体の平滑性、特にヘッドと
の間でスペーシング損失となるような異物のない事、あ
るいは磁気的特性が長尺に亘って維持されている事が必
要となり、その長尺の程度は生産的規模に見合う長さで
ある事が必要とされる。しかるに第２図に示す方法では
以下の様な問題点を生じるものであった。すなわち、こ
の方法においては、蒸気圧の高いＣｒは、Ｃｒ濃度の高
い状態では金属状態としてその線材化等が難しく、それ
故金属粒としての補給となる。この時、Ｃｒ金属は昇華
性であるために加熱溶融させてるつぼ１に補給する事が
できず、それ故図に示す様な粒状の供給となる。しかし
ながらこの場合、Ｃｒ粒は粒状であるために種々の不凝
縮ガスを吸着し易く、その状態で溶湯内に供給されると
所謂突沸現象が発生し、蒸着膜中に比較的径の大きな溶
湯と同一成分の異物が発生し、磁気ヘッドとの接触にお
いて記録抜け等の大きな問題を生じさせるものであっ
た。また、第２図の従来例において、Ｃｏ材料を供給し
ながら長尺に対応する方法もあるが、基本的に上記問題
点を有しているものである。When the film is formed by such a vacuum evaporation method, the magnetic recording medium is formed on the polymer film and the recording and reproducing are performed by contacting with the magnetic head. Therefore, the smoothness of the medium, especially the spacing between the head and It is necessary that there is no foreign matter that causes loss, or that the magnetic characteristics are maintained over a long length, and that the length of the long length must be a length commensurate with the productive scale. . However, the method shown in FIG. 2 causes the following problems. That is, in this method, Cr having a high vapor pressure is difficult to be made into a wire or the like in a metal state in a state where the Cr concentration is high, and therefore, it is supplied as metal particles. At this time, since Cr metal is sublimable, it cannot be replenished to the melting and melting crucible 1, and therefore the granular supply as shown in the figure is made. However, in this case, since the Cr particles are granular, various non-condensable gases are easily adsorbed, and when supplied into the molten metal in that state, a so-called bumping phenomenon occurs, and the molten metal having a relatively large diameter is formed in the deposited film. Foreign matter of the same component is generated, which causes a serious problem such as missing recording when contacting the magnetic head. Further, in the conventional example of FIG. 2, there is also a method of dealing with a long length while supplying a Co material, but it basically has the above problem.
一方第３図に示す方法においては、基本的に第２図に示
した様な異物発生に対する問題はないが、次の様な問題
を有しているものである。すなわち、この様な磁気記録
媒体を真空蒸着法によって作製するメリットはその高速
量産性にあり、蒸着速度は数千Å／sec程度である。こ
の様な高蒸着速度の場合、２元蒸着法に於てはその組成
制御がうまくいかず、すなわち両者の蒸発粒子の混合が
不均一となり、フィルム基板の上流側と下流側すなわち
膜厚方向に濃度不均一を生じ特性を確保できないという
問題があった。On the other hand, the method shown in FIG. 3 basically does not have the problem of foreign matter generation as shown in FIG. 2, but has the following problems. That is, the advantage of producing such a magnetic recording medium by the vacuum vapor deposition method is its high-speed mass productivity, and the vapor deposition rate is about several thousand Å / sec. In the case of such a high vapor deposition rate, the composition control is not successful in the two-source vapor deposition method, that is, the vaporized particles of the two are not mixed uniformly, and the upstream and downstream sides of the film substrate, that is, the film thickness direction There is a problem in that the density cannot be uniform and the characteristics cannot be secured.
発明が解決しようとする課題 このように蒸気圧差の大きい合金薄膜を製膜する場合に
は、蒸発源側で組成を制御する様に、例えば蒸気圧の高
い金属成分を補給したり、２元蒸着源でそれぞれ組成を
制御する方法があるが、補給に際し、突沸現象を生じた
り、長尺に亘っての膜組成が均一でなかったり、膜厚方
向で組成ムラが発生するといった課題がある。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention When an alloy thin film having a large vapor pressure difference is formed as described above, for example, metal components having a high vapor pressure are replenished or binary vapor deposition is performed so that the composition is controlled on the evaporation source side. Although there is a method of controlling the composition by each of the sources, there are problems that a bumping phenomenon occurs during replenishment, the film composition is not uniform over a long length, and composition unevenness occurs in the film thickness direction.
課題を解決するための手段 蒸気圧の低い金属割合を大とし、蒸気圧と高い金属割合
を小とする合金薄膜を真空蒸着法によって形成する際
に、第１の電子線により蒸発るつぼを加熱し、第２の電
子線により所望膜組成での高蒸気圧成分の割合よりも、
その割合が少ない第１の蒸着材料と、第１の蒸着材料よ
りも蒸気圧の高い成分の割合を増やした第２の蒸着材料
とを選択的に加熱溶融させ、前記蒸発るつぼに供給す
る。Means for Solving the Problems When forming an alloy thin film having a low vapor pressure of a large metal proportion and a low vapor pressure and a high metal proportion by a vacuum vapor deposition method, a vaporizing crucible is heated by a first electron beam. , The ratio of the high vapor pressure component in the desired film composition due to the second electron beam,
A first vapor deposition material having a small proportion thereof and a second vapor deposition material having an increased proportion of a component having a higher vapor pressure than the first vapor deposition material are selectively heated and melted and supplied to the evaporation crucible.
作 用 蒸発るつぼからの蒸発組成に応じ、所望膜組成での高蒸
気圧成分の割合よりその割合の少ない蒸着材料と、それ
よりも蒸気圧の高い成分の割合を多くした蒸着材料とを
選択的に加熱溶融させてるつぼ内に供給する事により、
合金薄膜の膜組成を長尺に亘って均一化し、かつ突沸現
象をるつぼへの供給を溶湯状態で供給する事で防ぐ。Depending on the evaporating composition from the working evaporating crucible, a vapor deposition material with a lower proportion than the high vapor pressure component in the desired film composition and a vapor deposition material with a higher proportion of the vapor pressure component higher than that are selectively selected. By heating and melting into the crucible,
The film composition of the alloy thin film is made uniform over a long length, and the bumping phenomenon is prevented by supplying it to the crucible in a molten state.
実 施 例 第１図は本発明の一実施例の製造法を具体化する真空蒸
着装置の内部構造である。Practical Example FIG. 1 shows the internal structure of a vacuum vapor deposition apparatus embodying the manufacturing method of an embodiment of the present invention.
図において、１１は長尺幅広の高分子フィルム基板であ
り、回転する１２の円筒状キャン周囲に沿って走行しな
がらその下部で合金薄膜を形成する。１３は防着板兼マ
スクであり、前記高分子フィルム基板１１への合金薄膜
の付着領域を限定している。この下部には、耐熱性材料
よりなるるつぼ１４が設置されており、この時るつぼ１
４は高分子フィルム基板１１の幅方向に細長い形状とし
ている。るつぼ１４内には蒸気圧の低い金属とそれより
も蒸気圧の高い金属と溶融した状態で存在し、この溶融
金属１５は上方の第１の電子線16で加熱されて蒸発し、
前記高分子フィルム１１上に堆積する。この時第１の電
子線源１６は矢印で示す如く、るつぼ１４の長さ方向に
ある周波数でスキャンされているものである。またこの
第１の電子線源１６への投入パワーおよびスキャン周波
数は蒸発粒子空間に設けた蒸発速度モニター１７により
制御されている。In the figure, 11 is a long and wide polymer film substrate on which an alloy thin film is formed while traveling along the circumference of a rotating 12 cylindrical can. Denoted at 13 is a mask that also serves as a deposition preventive plate, and limits the adhesion region of the alloy thin film to the polymer film substrate 11. A crucible 14 made of a heat-resistant material is installed in the lower part of the crucible 1.
Reference numeral 4 is an elongated shape in the width direction of the polymer film substrate 11. In the crucible 14, a metal having a low vapor pressure and a metal having a higher vapor pressure are present in a molten state, and the molten metal 15 is heated by the first electron beam 16 above and vaporized,
It is deposited on the polymer film 11. At this time, the first electron beam source 16 is scanned at a frequency in the length direction of the crucible 14, as shown by the arrow. The power input to the first electron beam source 16 and the scan frequency are controlled by the evaporation rate monitor 17 provided in the evaporation particle space.
一方るつぼ１４の端部には、所望の合金薄膜を得るため
に、まず所望膜組成中の高蒸気圧成分の割合よりその割
合が少ない第１蒸着材料１８と第１蒸着材料よりも、蒸
気圧の高い成分の割合を高めた第２蒸着材料１９とが、
ロッド状で設置されており、それぞれは供給装置２０，
２１を介してるつぼ１４上部に進入する如く構成されて
いる。またこの蒸着材料１８，１９の上部にはこの蒸着
材料１８，１９を加熱溶融させるための第２の電子線源
２２が位置されており、この電子線源２２からの電子線
は、蒸着材料１８，１９にそれぞれ選択的に照射可能な
様に内部磁界により偏向される。更にこの電子線照射の
選択と投入パワーおよび蒸着材料１８，１９の送り速度
は蒸発粒子空間に設けた蒸発組成モニター２３の信号に
より制御されているものである。On the other hand, at the end of the crucible 14, in order to obtain a desired alloy thin film, first, the vapor pressure is higher than that of the first vapor deposition material 18 and the first vapor deposition material 18 whose proportion is smaller than the proportion of the high vapor pressure component in the desired film composition. The second vapor deposition material 19 in which the ratio of the component having a high
They are installed in the form of rods, each of which is a supply device 20,
It is configured to enter the upper portion of the crucible 14 via 21. A second electron beam source 22 for heating and melting the vapor deposition materials 18 and 19 is located above the vapor deposition materials 18 and 19, and the electron beam from the electron beam source 22 is used as the vapor deposition material 18. , 19 are deflected by an internal magnetic field so that they can be selectively irradiated. Further, the selection of the electron beam irradiation, the input power, and the feed rate of the vapor deposition materials 18 and 19 are controlled by the signal of the vaporization composition monitor 23 provided in the vaporized particle space.
この様に構成された実施例での作用様態は次の如くであ
る。すなわち、蒸着を開始するにあたり、まず所望膜組
成例えばＣｏ−Ｃｒの垂直媒体でその組成が、Ｃｏ８０
％−Cr２０％の膜を得ようとする場合、第２成分である
Ｃｒの割合が所望膜組成のＣｒ割合よりも少ない第１蒸
着材料１８を供給装置２０により供給しながら第２の電
子線源２２よりの電子線で選択的に加熱溶融させてるつ
ぼ14内に供給し、第１電子線源16により加熱蒸発させ
る。この時蒸発粒子の組成は第４図に示す如く、供給材
料のＣｒ割合が低いＣｏ９３％−Ｃｒ７％の場合でも初
期にはおよそ３０％のＣｒ組成となり、その後徐々にＣ
ｒ濃度が減少し、ある所定時間経過後に所望の膜組成で
あるＣｏ８０％−Ｃｒ２０％になる。この状態になった
時点でシャッター２４を開放し高分子フィルム基板１１
に蒸着させるものである。またこの状態でしばらくする
とＣｒ濃度が減少する。そこでＣｒ割合が高い第２蒸着
材料１９に第２電子線源２２よりの電子線を照射して加
熱溶融させてるつぼ１４に供給する事により蒸発粒子の
組成をＣｏ８０％−Ｃｒ２０％に維持させる事が可能と
なる。またこの時、そのままで第２蒸着材料１９のみを
加熱溶融させていると、再びＣｒ割合が高くなるので、
第２電子線源２２の照射を第１蒸着材料へ再照射して制
御する。この時るつぼ１４内の溶湯量をある程度維持し
て長時間連続蒸着するためには、第１蒸着材料の加熱溶
融量で制御する事が望ましく、更にそのためには、第１
蒸着材料中の蒸気圧の高い成分の割合を極力低く抑えた
材料組成とする方が良く（例えば、Ｃｒ濃度２〜３
％）、こうする事によって蒸着の立上げから蒸着開始ま
でのロス時間も少なして済む。The mode of operation in the embodiment configured in this way is as follows. That is, when vapor deposition is started, first, a desired film composition, for example, a Co--Cr vertical medium having a composition of Co80 is used.
% -Cr 20% film, the second electron beam source is supplied from the supply device 20 while supplying the first vapor deposition material 18 in which the ratio of Cr as the second component is smaller than the ratio of Cr in the desired film composition. It is supplied into the crucible 14 which is selectively heated and melted by the electron beam from 22 and heated and evaporated by the first electron beam source 16. At this time, as shown in FIG. 4, the composition of the vaporized particles initially becomes about 30% of Cr composition even when the feed material has a low Cr ratio of Co93% −Cr7%, and then gradually becomes C
The r concentration decreases, and after a predetermined time elapses, the desired film composition becomes Co80% -Cr20%. When this state is reached, the shutter 24 is opened and the polymer film substrate 11
Is to be vapor-deposited on. Further, after a while in this state, the Cr concentration decreases. Therefore, by irradiating the second vapor deposition material 19 having a high Cr ratio with an electron beam from the second electron beam source 22 and supplying it to the melting crucible 14 which is heated and melted, the composition of the evaporated particles is maintained at Co80% -Cr20%. Is possible. Further, at this time, if only the second vapor deposition material 19 is heated and melted as it is, the Cr ratio increases again.
The irradiation of the second electron beam source 22 is controlled by re-irradiating the first vapor deposition material. At this time, in order to maintain a certain amount of the molten metal in the crucible 14 and to perform continuous vapor deposition for a long period of time, it is desirable to control by the heating and melting amount of the first vapor deposition material.
It is better to use a material composition in which the proportion of components having a high vapor pressure in the vapor deposition material is suppressed as low as possible (for example, a Cr concentration of 2 to 3).
%), By doing so, the loss time from the start of deposition to the start of deposition can be shortened.
本発明においては、蒸着時の組成制御を所望膜組成中の
高蒸気圧成分の割合よりその割合が少ない蒸着材料と、
それよりも高蒸気圧成分割合を高めた蒸着材料とを選択
的に電子線によって加熱溶融させてるつぼに供給し、更
にるつぼを別の電子線によって加熱する事で、蒸着材料
を直接るつぼ内に供給する場合に発生するような突沸現
象がなく、もし蒸着材料に不純物があったとしても供給
部で発生するだけであり、基板に付着させない構成とす
る事が容易でおあり、結果として膜表面性に優れた媒体
を作製できる。更に、蒸発中の組成制御は、蒸着材料へ
選択的に電子線を照射するだけで可能であり、また量産
時等のかなりの長尺に亘っても、その組成が制御できる
ものである。In the present invention, the composition control during vapor deposition is a vapor deposition material having a ratio lower than that of the high vapor pressure component in the desired film composition,
An evaporation material with a higher proportion of higher vapor pressure than that is selectively heated and melted by an electron beam and supplied to a crucible, and the crucible is heated by another electron beam, so that the evaporation material is directly placed in the crucible. There is no bumping phenomenon that occurs when supplying, and even if there are impurities in the vapor deposition material, it only occurs in the supplying part, and it is easy to make it a structure that does not adhere to the substrate, and as a result the film surface A medium having excellent properties can be produced. Furthermore, composition control during evaporation can be performed only by selectively irradiating the vapor deposition material with an electron beam, and the composition can be controlled over a considerable length during mass production.
また、本実施例では、蒸着材料の供給部としてるつぼの
片端に設けているが、基板が幅広となった場合には、他
端にも設けると基板幅方向での組成均一化が図れる。In addition, in this embodiment, the vapor deposition material is provided at one end of the crucible as a supply portion. However, when the substrate is wide, it is also provided at the other end to make the composition uniform in the substrate width direction.
発明の効果 本発明によれば、所望膜組成での高蒸気圧成分割合より
も、その成分割合が少ない蒸着材料と、この蒸着材料よ
りも高蒸気圧成分の割合が多い蒸着材料とを選択的に加
磅溶融させてるつぼに供給しながら蒸着する事により、
突沸現象等のない平滑な膜を作製でき、更に長尺に亘っ
て安定に膜組成の均一な垂直磁気媒体を作製する事がで
きる。EFFECTS OF THE INVENTION According to the present invention, a vapor deposition material having a smaller proportion of a high vapor pressure component in a desired film composition and a vapor deposition material having a higher proportion of a higher vapor pressure component than this vapor deposition material are selectively formed. By vaporizing while supplying to a melting crucible
It is possible to produce a smooth film without bumping phenomenon and the like, and to produce a perpendicular magnetic medium having a uniform film composition stably over a long length.
第１図は本発明の一実施例の金属薄膜製造法を具体化す
る蒸着装置の構成図、第２図および第３図は従来法によ
る金属薄膜製造装置の構成図、第４図はＣｏ−Ｃｒ合金
蒸発におけるＣｒ濃度と時間の関係を示す図である。 １１……高分子フィルム基板、１４……るつぼ、１６…
…第１の電子線源、１８……第１の蒸着材料、１９……
第２の蒸着材料、２２……第２の電子線源。FIG. 1 is a block diagram of a vapor deposition apparatus that embodies a metal thin film manufacturing method according to an embodiment of the present invention, FIGS. 2 and 3 are block diagrams of a conventional metal thin film manufacturing apparatus, and FIG. It is a figure which shows the relationship between Cr concentration in Cr alloy evaporation, and time. 11 ... Polymer film substrate, 14 ... Crucible, 16 ...
... first electron beam source, 18 ... first vapor deposition material, 19 ...
Second evaporation material, 22 ... Second electron beam source.
Claims (2)
膜組成中の高蒸気圧成分の割合よりその割合が少ない第
１蒸着材料と、前記第１蒸着材料よりも高蒸気圧成分の
割合が多い第２蒸着材料とを第２の電子線により選択的
に加熱溶融しながら前記坩堝内に供給し、低蒸気圧成分
割合を大とし、高蒸気圧成分割合を小とする金属薄膜を
真空蒸着法によって形成することを特徴とする金属薄膜
の製造法。1. A first vapor deposition material which heats the inside of a crucible with a first electron beam and has a ratio smaller than that of a high vapor pressure component in a desired film composition, and a vapor pressure component higher than the first vapor deposition material. And a second vapor deposition material having a large proportion of the above, are supplied into the crucible while being selectively heated and melted by a second electron beam to increase the low vapor pressure component ratio and decrease the high vapor pressure component ratio. A method for producing a metal thin film, characterized in that the film is formed by a vacuum deposition method.
圧成分としてはＣｏであることを特徴とした請求項１記
載の金属薄膜の製造法。2. The method for producing a metal thin film according to claim 1, wherein the high vapor pressure component is Cr and the low vapor pressure component is Co.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10639788A JPH0610344B2 (en) | 1988-04-28 | 1988-04-28 | Metal thin film manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10639788A JPH0610344B2 (en) | 1988-04-28 | 1988-04-28 | Metal thin film manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01275747A JPH01275747A (en) | 1989-11-06 |
| JPH0610344B2 true JPH0610344B2 (en) | 1994-02-09 |
Family
ID=14432558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10639788A Expired - Fee Related JPH0610344B2 (en) | 1988-04-28 | 1988-04-28 | Metal thin film manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0610344B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4053303A1 (en) | 2021-03-01 | 2022-09-07 | Carl Zeiss Vision International GmbH | Vapor deposition method for coating a spectacle lens, physical vapor deposition system and crucible for physical vapor deposition |
-
1988
- 1988-04-28 JP JP10639788A patent/JPH0610344B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01275747A (en) | 1989-11-06 |
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